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WO2015030361A1 - Composition for forming solar cell electrode and electrode produced from same - Google Patents

Composition for forming solar cell electrode and electrode produced from same Download PDF

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Publication number
WO2015030361A1
WO2015030361A1 PCT/KR2014/005762 KR2014005762W WO2015030361A1 WO 2015030361 A1 WO2015030361 A1 WO 2015030361A1 KR 2014005762 W KR2014005762 W KR 2014005762W WO 2015030361 A1 WO2015030361 A1 WO 2015030361A1
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WIPO (PCT)
Prior art keywords
solar cell
composition
silver
cell electrode
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2014/005762
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French (fr)
Korean (ko)
Inventor
박상희
구현진
김태준
송헌규
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Cheil Industries Inc
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Cheil Industries Inc
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Publication date
Priority claimed from KR1020130160769A external-priority patent/KR101693070B1/en
Application filed by Cheil Industries Inc filed Critical Cheil Industries Inc
Priority to CN201480043119.5A priority Critical patent/CN105593946B/en
Priority to US14/901,629 priority patent/US9944802B2/en
Publication of WO2015030361A1 publication Critical patent/WO2015030361A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14Conductive material dispersed in non-conductive inorganic material
    • H01B1/16Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20Conductive material dispersed in non-conductive organic material
    • H01B1/22Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/20Electrodes
    • H10F77/206Electrodes for devices having potential barriers
    • H10F77/211Electrodes for devices having potential barriers for photovoltaic cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Definitions

  • the present invention relates to a composition for forming a solar cell electrode and an electrode prepared therefrom.
  • Solar cells generate electrical energy using the photoelectric effect of pn junctions that convert photons of sunlight into electricity.
  • front and rear electrodes are formed on the upper and lower surfaces of the semiconductor wafer or substrate on which the pn junction is formed.
  • the photovoltaic effect of the pn junction is induced by solar light incident on the semiconductor wafer, and electrons generated therefrom provide a current flowing through the electrode to the outside.
  • the electrode of the solar cell may be formed on the wafer surface by coating, patterning and firing the composition for forming a solar cell electrode.
  • the thickness of the emitter is continuously thinned to increase the efficiency of the solar cell, it may cause a shunting phenomenon that may degrade the performance of the solar cell, and to increase the conversion efficiency. It is gradually increasing the area of the solar cell, which can increase the contact resistance of the solar cell can reduce the efficiency of the solar cell.
  • An object of the present invention is to provide a composition for forming a solar cell electrode excellent in contact between the electrode and the wafer surface.
  • Another object of the present invention is to provide a composition for forming a solar cell electrode which can minimize contact resistance and series resistance.
  • Still another object of the present invention is to provide a solar cell electrode having excellent fill factor and conversion efficiency.
  • Another object of the present invention is to provide an electrode made of the composition.
  • composition for forming a solar cell electrode is silver (Ag) powder; Glass frits containing silver (Ag) and tellurium (Te) elements; And an organic vehicle, wherein the glass frit has a molar ratio of Ag and Te of about 1: 0.1 to about 1:25.
  • the glass frit is lead (Pb), bismuth (Bi), phosphorus (P), germanium (Ge), gallium (Ga), antimony (Sb), cerium (Ce), iron (Fe), lithium (Li), silicon (Si), Zinc (Zn), Tungsten (W), Magnesium (Mg), Cesium (Cs), Strontium (Sr), Molybdenum (Mo), Titanium (Ti), Tin (Sn), Indium (In), Vanadium (V), ruthenium (Ru), barium (Ba), nickel (Ni), copper (Cu), sodium (Na), potassium (K), arsenic (As), cobalt (Co), zirconium (Zr), manganese It may further include one or more elements selected from the group consisting of (Mn), neodymium (Nd), chromium (Cr) and aluminum (Al).
  • the silver (Ag) element included in the glass frit may be derived from one or more silver compounds selected from the group consisting of silver cyanide, silver nitrate, silver halide, silver carbonate, and silver acetate.
  • the glass frit may be formed from a metal oxide including the silver compound and tellurium (Te) oxide.
  • the metal oxide is lead (Pb), bismuth (Bi), phosphorus (P), germanium (Ge), gallium (Ga), antimony (Sb), cerium (Se), iron (Fe), lithium (Li), silicon (Si), zinc (Zn), tungsten (W), magnesium (Mg), cesium (Ce), strontium (Sr), molybdenum (Mo), titanium (Ti), tin (Sn), indium (In), vanadium (V), ruthenium (Ru), barium (Ba), nickel (Ni), copper (Cu), sodium (Na), potassium (K), arsenic (As), cobalt (Co), zirconium (Zr), manganese It may further include one or more selected from the group consisting of (Mn), neodymium (Nd), chromium (Cr) and aluminum (Al).
  • the composition comprises about 60 to about 95 weight percent of the silver powder; About 0.1 to about 20 weight percent of the glass frit; And about 1 to about 30% by weight of the organic vehicle.
  • the glass frit may include about 0.1 to about 50 mol% of silver (Ag) element relative to the total number of moles of glass frit.
  • the glass frit may have an average particle diameter (D50) of about 0.1 ⁇ m to about 10 ⁇ m.
  • composition may further include one or more additives selected from the group consisting of dispersants, thixotropic agents, plasticizers, viscosity stabilizers, antifoams, pigments, ultraviolet stabilizers, antioxidants and coupling agents.
  • additives selected from the group consisting of dispersants, thixotropic agents, plasticizers, viscosity stabilizers, antifoams, pigments, ultraviolet stabilizers, antioxidants and coupling agents.
  • Another aspect of the invention relates to a solar cell electrode prepared from the composition for forming a solar cell electrode.
  • the composition for forming a solar cell electrode of the present invention introduced a silver compound having an ion decomposition temperature of about 1000 ° C. or lower into a glass frit to improve contact between the electrode and the wafer, and the solar cell electrode made of the composition had a contact resistance (Rc). Excellent fill factor and conversion efficiency due to minimization of series resistance (Rs).
  • FIG. 1 is a schematic diagram schematically showing the structure of a solar cell according to an embodiment of the present invention.
  • Composition for forming a solar cell electrode of the present invention is silver (Ag) powder; Glass frits containing silver (Ag) and tellurium (Te) elements; And an organic vehicle, wherein the glass frit may have a molar ratio of Ag and Te of about 1: 0.1 to about 1:25.
  • the present invention will be described in detail.
  • the composition for solar cell electrode formation of this invention uses silver (Ag) powder as electroconductive powder.
  • the silver powder may be a powder having a particle size of nano size or micro size.
  • the silver (Ag) powder may have a size of several tens to hundreds of nanometers or a size of several tens of micrometers.
  • silver powders having different sizes of # 2 or more may be mixed and used.
  • the silver powder may have a spherical, plate or amorphous shape in particle shape.
  • the silver powder may have an average particle diameter (D50) of about 0.1 ⁇ m to about 10 ⁇ m, and more preferably about 0.5 ⁇ m to about 5 ⁇ m.
  • D50 average particle diameter
  • the average particle diameter was measured using a 1064LD model manufactured by CILAS after dispersing the conductive powder in isopropyl alcohol (IPA) at 25 ° C. for 3 minutes with ultrasonic waves. Within this range, the contact resistance and the wire resistance can be lowered.
  • Silver powder may comprise from about 60 to about 95 weight percent of the total weight of the composition. Within this range, it is possible to prevent the conversion efficiency from lowering due to an increase in the resistance, and to prevent pasting from becoming difficult due to the relative decrease in the amount of the organic vehicle. Preferably from about 70 to about 90 weight percent, for example 71, 72, 73, 74, 75, 76, 77, 78, 79, 80, 81, 82, 83, 84, 85, 86, 87, 88, 89, 90 wt% may be included.
  • the glass frit etches the anti-reflection film during the firing process of the composition for forming a solar cell, generates silver crystal particles in the emitter region to melt the silver particles and lowers the resistance, and It improves the adhesion between the wafers and softens during sintering to induce an effect of lowering the firing temperature.
  • Increasing the area of the solar cell in order to increase the efficiency of the solar cell can increase the contact resistance of the solar cell to minimize damage to the pn junction (pn junction) and at the same time minimize the series resistance.
  • pn junction pn junction
  • the variation in the firing temperature increases with the increase of the wafer of various sheet resistances, it is preferable to use a glass frit that can sufficiently secure thermal stability even at a wide firing temperature.
  • the glass frit of the present invention is formed from silver (Ag) compounds and metal oxides.
  • the glass frit of the present invention may be prepared by mixing, melting, and pulverizing a silver compound and a metal oxide having a temperature of about 1000 ° C. or less decomposed into silver (Ag) ions.
  • the metal oxide may be one or more.
  • the silver compound may be used alone or as a mixture of silver cyanide (AgCN), silver nitrate (AgNO3), silver halide (Ag-X), silver carbonate (Ag2CO3), silver acetate (AgC2H302) and the like as the ion-bonding compound.
  • X may be iodine, fluorine, chlorine or bromine, preferably iodine.
  • the metal oxide comprises tellurium (Te) oxide, and lead (Pb), bismuth (Bi), phosphorus (P), germanium (Ge), gallium (Ga) in addition to the tellurium (Te) oxide ), Antimony (Sb), cerium (Ce), iron (Fe), lithium (Li), silicon (Si), zinc (Zn), tungsten (W), magnesium (Mg), cesium (Cs), strontium (Sr) ), Molybdenum (Mo), titanium (Ti), tin (Sn), indium (In), vanadium (V), ruthenium (Ru), barium (Ba), nickel (Ni), copper (Cu), sodium (Na) ), Potassium (K), arsenic (As), cobalt (Co), zirconium (Zr), manganese (Mn), neodymium (Nd), chromium (Cr) and one selected from the group consisting of oxides of aluminum (Al) It may further include
  • the glass frit of the present invention made of the silver compound and the metal oxide may include silver (Ag) and tellurium (Te) elements, and the molar ratio of Ag and Te present in the glass frit is about 1: 0.1 to about 1 : 25. Low series resistance and contact resistance can be ensured in the above range.
  • the molar ratio of Ag and Te present in the glass frit may be 1: 0.3 to 1:24, for example, 1: 1 to 1:21.
  • the molar ratio means the molar ratio of each element.
  • the glass frit may include lead (Pb), bismuth (Bi), phosphorus (P), germanium (Ge), gallium (Ga), antimony (Sb), cerium (Ce), iron (Fe), and lithium ( Li, silicon (Si), zinc (Zn), tungsten (W), magnesium (Mg), cesium (Cs), strontium (Sr), molybdenum (Mo), titanium (Ti), tin (Sn), indium ( In), vanadium (V), ruthenium (Ru), barium (Ba), nickel (Ni), copper (Cu), sodium (Na), potassium (K), arsenic (As), cobalt (Co), zirconium ( It may further include one or more elements selected from the group consisting of Zr), manganese (Mn), neodymium (Nd), chromium (Cr) and aluminum (Al).
  • the glass frit may contain about 0.1 to about 50 mol% of silver (Ag) element relative to the total number of moles of glass frit, and preferably about 0.5 to about 40 mol%.
  • the content of each metal element included in the glass frit can be measured by Inductively Coupled Plasma-Optical Emission Spectrometer (ICP-OES). Since the inductively coupled plasma-atomic emission spectroscopy (ICP-OES) uses a very small amount of sample, it can shorten the sample preparation time, reduce the error due to sample pretreatment, and have an excellent analysis sensitivity.
  • ICP-OES Inductively Coupled Plasma-Optical Emission Spectrometer
  • the inductively coupled plasma-atomic emission spectroscopy is a step of pre-treating a sample, preparing a standard solution, and measuring and converting the concentration of the element to be measured to determine the content of each element present in the glass frit. Can be measured precisely.
  • the pretreatment of the sample may carbonize the sample by dissolving and heating the sample in an appropriate amount using an acid solution capable of dissolving the glass frit as a sample.
  • an acid solution for example, a sulfuric acid (H 2 SO 4) solution or the like may be used.
  • the carbonized sample may be appropriately diluted to a range of analytical concentration of the element to be analyzed with a solvent such as distilled water and hydrogen peroxide (H 2 O 2).
  • the analytical concentration range may be used in a diluted state of about 10,000 times in consideration of the element detection capability of the applied ICP-OES device.
  • the pretreated sample may be calibrated with a standard solution, for example, a standard solution of an element to be analyzed for element measurement when measured with an ICP-OES instrument.
  • the standard solution into the ICP-OES measuring device to create a calibration curve by an external standard method (concentration) of the metal element to be analyzed of the sample pre-treated with the ICP-OES measuring device ( ppm) can be measured and converted to calculate the molar ratio of each element in the glass frit.
  • the glass frit can be prepared from the silver compounds and metal oxides described above using conventional methods. For example, it mixes with the composition of the said silver compound and a metal oxide. Mixing can be performed using a ball mill or planetary mill. The mixed composition is melted at conditions of about 800 ° C. to about 1300 ° C. and quenched at 25 ° C. The obtained result can be ground by a disk mill, planetary mill or the like to obtain a glass frit.
  • the glass frit may have an average particle diameter (D50) of about 0.1 to about 10 ⁇ m, the shape of the glass frit may be spherical or irregular.
  • the glass frit is about 0.1 to about 20% by weight, preferably about 0.5 to about 10% by weight, for example 1, 2, 2.5, 3, 3.5, 4, 4.5, It is preferably included in 5, 5.5, 6, 6.5, 7, 8, 9, 10% by weight. When it is contained in the above range, it is possible to ensure the pn junction stability under various sheet resistance, to minimize the series resistance value, and finally to improve the efficiency of the solar cell.
  • the organic vehicle imparts suitable viscosity and rheological properties to the composition through mechanical mixing with the inorganic component of the composition for forming a solar cell electrode.
  • the organic vehicle may be an organic vehicle that is typically used in a composition for forming a solar cell electrode, and may include a binder resin and a solvent.
  • the binder resin an acrylate-based or cellulose-based resin can be used.
  • ethyl cellulose may be used as the binder resin.
  • the binder resin is ethyl hydroxyethyl cellulose, nitro cellulose, a mixture of ethyl cellulose and phenol resin, alkyd resin, phenol resin, acrylic ester resin, xylene resin, polybutene resin, polyester resin.
  • the solvent for example, hexane, toluene, ethyl cellosolve, cyclohexanone, butyl cellosolve, butyl carbitol (diethylene glycol monobutyl ether), dibutyl carbitol (diethylene glycol dibutyl ether) Butyl carbitol acetate (diethylene glycol monobutyl ether acetate), propylene glycol monomethyl ether, hexylene glycol, terpineol, methyl ethyl ketone, benzyl alcohol, gamma butyrolactone or ethyl lactate alone or the like It can mix and use 2 or more types.
  • the organic vehicle may be included in about 1 to about 30% by weight based on the total weight of the composition for forming a solar cell electrode. It is possible to secure sufficient adhesive strength and excellent printability in the above range.
  • the composition for forming a solar cell electrode of the present invention may further include a conventional additive as needed to improve the flow characteristics, process characteristics and stability in addition to the components described above.
  • the additive may be used alone or in combination of two or more of a dispersant, thixotropic agent, plasticizer, viscosity stabilizer, antifoaming agent, pigment, ultraviolet stabilizer, antioxidant, coupling agent and the like. They may be included in about 0.1 to about 5% by weight relative to the total weight of the composition for forming a solar cell electrode, but may be changed in content as necessary.
  • Another aspect of the invention relates to an electrode formed from the composition for forming a solar cell electrode and a solar cell comprising the same.
  • 1 illustrates a structure of a solar cell according to an embodiment of the present invention.
  • a composition for forming an electrode is printed and baked on a wafer 100 or a substrate including a p layer (or n layer) 101 and an n layer (or p layer) 102 as an emitter.
  • the rear electrode 210 and the front electrode 230 may be formed.
  • the electrode forming composition may be printed on the back side of the wafer and then dried at a temperature of about 200 ° C. to 400 ° C. for about 10 to 60 seconds to perform a preliminary preparation step for the back electrode.
  • the composition for forming an electrode on the front surface of the wafer may be printed and dried to perform a preliminary preparation step for the front electrode. Thereafter, a firing process may be performed at about 400 ° C. to about 950 ° C., preferably about 700 ° C. to about 950 ° C., for about 30 seconds to about 210 seconds to form a front electrode and a rear electrode.
  • Spherical silver powder (Dowa Hightech CO) having an average particle diameter of 2.0 ⁇ m after dissolving 3.0 wt% of ethyl cellulose (DTH chemical company, ETHOCEL STD4) as an organic binder in 6.5 wt% of solvent butyl carbitol at 60 ° C.
  • a composition for forming a solar cell electrode was prepared in the same manner as in Example 1, except that the glass frit prepared with the composition of Table 1 was used.
  • Silver nitrate (AgNO3) was used as the silver compound, and a composition for forming a solar cell electrode was prepared in the same manner as in Example 1 except for using the glass frit prepared with the composition of Table 2 below.
  • Silver iodide (AgI) was used as the silver compound, and a composition for forming a solar cell electrode was prepared in the same manner as in Example 1 except for using the glass frit prepared with the composition of Table 3 below.
  • Silver carbonate (Ag2CO3) was used as the silver compound, and a composition for forming a solar cell electrode was prepared in the same manner as in Example 1 except for using the glass frit prepared with the composition of Table 4 below.
  • a silver compound (AgC 2 H 3 O 2) was used as the silver compound, and a composition for forming a solar cell electrode was prepared in the same manner as in Example 1 except for using the glass frit prepared in the composition of Table 5 below.
  • a composition for forming a solar cell electrode was prepared in the same manner as in Example 1, except that the glass frit prepared with the composition of Table 6 was used.
  • Pretreatment of the sample 0.5g of glass frit, the sample to be analyzed, is placed in a beaker and accurately weighed to 0.0001g. 5 ml of sulfuric acid (H 2 SO 4) was added to a beaker containing the sample, and the sample was completely carbonized by heating at 220 ° C. for 3 hours using a hot plate. Pretreatment was completed by adding hydrogen peroxide (H 2 O 2) until the beaker containing the carbonized sample became transparent.
  • H 2 SO 4 sulfuric acid
  • Standard solutions of the silver (Ag) and tellurium (Te) elements which are the analysis target elements, were prepared, respectively.
  • composition for forming a solar cell electrode prepared in Examples and Comparative Examples was printed by screen printing in a predetermined pattern on the entire surface of a crystalline mono wafer (Wafer), and dried using an infrared drying furnace.
  • the cell formed by the above process was calcined for 30 seconds to 210 seconds between 700 to 950 ° C. using a belt type kiln, and the cell thus manufactured was contacted (Rc) of the solar cell using a TLM (Transfer Length Method) measuring equipment. ) was measured and shown in Tables 8 to 13, respectively.
  • the composition for forming a solar cell electrode according to the above Examples and Comparative Examples was printed by screen printing in a predetermined pattern on the entire surface of a crystalline mono wafer (Wafer), and dried using an infrared drying furnace. After printing the aluminum paste on the back of the back of the wafer and dried in the same manner.
  • the cell formed by the above process was fired for 30 seconds to 210 seconds in a temperature range of 700 to 950 ° C. using a belt-type kiln, and the cell thus manufactured was manufactured using a solar cell efficiency measuring device (Pasan, CT-801).
  • the series resistance (Rs), fill factor (FF,%) and conversion efficiency (%) of the solar cell were measured and shown in Tables 8 to 13, respectively.
  • the electrodes of Examples 1 to 93 in which the molar ratio of Ag and Te in the glass frit is 1: 0.1 to 1:25 are Comparative Examples 1 in which the molar ratio of Ag and Te is outside the above range. And compared with the electrode of the comparative example 2 which does not contain a silver (Ag) element, it can be seen that it is low in contact resistance and series resistance, and excellent in Fill Factor and conversion efficiency.

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  • Dispersion Chemistry (AREA)
  • Physics & Mathematics (AREA)
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Abstract

The present invention relates to a composition for forming a solar cell electrode, comprising: silver (Ag) powder; a glass frit comprising silver (Ag) and tellurium (Te) elements; and an organic vehicle, wherein the glass frit has a mole ratio of 1:01 to 1:25 of Ag to Te. The solar cell electrode produced from the composition has excellent fill factor and conversion efficiency as contact resistance (Rc) and series resistance (Rs) are minimized.

Description

태양전지 전극 형성용 조성물 및 이로부터 제조된 전극Composition for forming solar cell electrode and electrode prepared therefrom

본 발명은 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극에 관한 것이다.The present invention relates to a composition for forming a solar cell electrode and an electrode prepared therefrom.

태양전지는 태양광의 포톤(photon)을 전기로 변환시키는 pn 접합의 광전 효과를 이용하여 전기 에너지를 발생시킨다. 태양전지는 pn 접합이 구성되는 반도체 웨이퍼 또는 기판 상·하면에 각각 전면 전극과 후면 전극이 형성되어 있다. 태양전지는 반도체 웨이퍼에 입사되는 태양광에 의해 pn 접합의 광전 효과가 유도되고, 이로부터 발생된 전자들이 전극을 통해 외부로 흐르는 전류를 제공한다. 이러한 태양전지의 전극은 태양전지 전극 형성용 조성물의 도포, 패터닝 및 소성에 의해, 웨이퍼 표면에 형성될 수 있다.Solar cells generate electrical energy using the photoelectric effect of pn junctions that convert photons of sunlight into electricity. In the solar cell, front and rear electrodes are formed on the upper and lower surfaces of the semiconductor wafer or substrate on which the pn junction is formed. The photovoltaic effect of the pn junction is induced by solar light incident on the semiconductor wafer, and electrons generated therefrom provide a current flowing through the electrode to the outside. The electrode of the solar cell may be formed on the wafer surface by coating, patterning and firing the composition for forming a solar cell electrode.

최근 태양전지의 효율을 증가시키기 위해 에미터(emitter)의 두께가 지속적으로 얇아짐에 따라, 태양전지의 성능을 저하시킬 수 있는 션팅(shunting) 현상을 유발시킬 수 있으며, 변환효율을 증가시키기 위해 태양전지의 면적을 점차 증가시키고 있는데, 이는 태양전지의 접촉저항을 높여 태양전지의 효율을 감소시킬 수 있다.Recently, as the thickness of the emitter is continuously thinned to increase the efficiency of the solar cell, it may cause a shunting phenomenon that may degrade the performance of the solar cell, and to increase the conversion efficiency. It is gradually increasing the area of the solar cell, which can increase the contact resistance of the solar cell can reduce the efficiency of the solar cell.

따라서, 웨이퍼와 접촉성을 향상하여 접촉저항(Rc)과 직렬저항(Rs)을 최소화시켜 변환효율이 우수한 태양전지 전극을 제조할 수 있는 태양전지 전극 형성용 조성물의 개발이 시급히 요구되고 있다.Therefore, there is an urgent need to develop a composition for forming a solar cell electrode capable of manufacturing a solar cell electrode having excellent conversion efficiency by improving contactability with a wafer to minimize contact resistance (Rc) and series resistance (Rs).

본 발명의 목적은 전극과 웨이퍼 표면의 접촉성이 우수한 태양전지 전극 형성용 조성물을 제공하기 위함이다.An object of the present invention is to provide a composition for forming a solar cell electrode excellent in contact between the electrode and the wafer surface.

본 발명의 다른 목적은 접촉저항과 직렬저항을 최소화할 수 있는 태양전지 전극 형성용 조성물을 제공하는 것이다.Another object of the present invention is to provide a composition for forming a solar cell electrode which can minimize contact resistance and series resistance.

본 발명의 또 다른 목적은 Fill Factor 및 변환효율이 우수한 태양전지 전극을 제공하는 것이다.Still another object of the present invention is to provide a solar cell electrode having excellent fill factor and conversion efficiency.

본 발명의 또 다른 목적은 상기 조성물로 제조된 전극을 제공하는 것이다.Another object of the present invention is to provide an electrode made of the composition.

본 발명의 상기 및 기타의 목적들은 하기 설명되는 본 발명에 의하여 모두 달성될 수 있다.The above and other objects of the present invention can be achieved by the present invention described below.

본 발명의 일 관점은 태양전지 전극 형성용 조성물에 관한 것이다. 상기 태양전지 전극 형성용 조성물은 은(Ag) 분말; 은(Ag) 및 텔루륨(Te) 원소를 포함하는 유리프릿; 및 유기비히클;을 포함하고, 상기 유리프릿은 Ag와 Te의 몰비가 약 1 : 0.1 내지 약 1 : 25 이다.One aspect of the invention relates to a composition for forming a solar cell electrode. The composition for forming a solar cell electrode is silver (Ag) powder; Glass frits containing silver (Ag) and tellurium (Te) elements; And an organic vehicle, wherein the glass frit has a molar ratio of Ag and Te of about 1: 0.1 to about 1:25.

상기 유리프릿은 납(Pb), 비스무스(Bi), 인(P), 게르마늄(Ge), 갈륨(Ga), 안티몬(Sb), 세륨(Ce), 철(Fe), 리튬(Li), 규소(Si), 아연(Zn), 텅스텐(W), 마그네슘(Mg), 세슘(Cs), 스트론튬(Sr), 몰리브덴(Mo), 티타늄(Ti), 주석(Sn), 인듐(In), 바나듐(V), 루테늄(Ru), 바륨(Ba), 니켈(Ni), 구리(Cu), 나트륨(Na), 칼륨(K), 비소(As), 코발트(Co), 지르코늄(Zr), 망간(Mn), 네오디뮴(Nd), 크롬(Cr) 및 알루미늄(Al)으로 이루어진 군에서 선택된 1종 이상의 원소를 더 포함할 수 있다.The glass frit is lead (Pb), bismuth (Bi), phosphorus (P), germanium (Ge), gallium (Ga), antimony (Sb), cerium (Ce), iron (Fe), lithium (Li), silicon (Si), Zinc (Zn), Tungsten (W), Magnesium (Mg), Cesium (Cs), Strontium (Sr), Molybdenum (Mo), Titanium (Ti), Tin (Sn), Indium (In), Vanadium (V), ruthenium (Ru), barium (Ba), nickel (Ni), copper (Cu), sodium (Na), potassium (K), arsenic (As), cobalt (Co), zirconium (Zr), manganese It may further include one or more elements selected from the group consisting of (Mn), neodymium (Nd), chromium (Cr) and aluminum (Al).

상기 유리프릿이 포함하는 은(Ag) 원소는 시안화은, 질산은, 할로겐화은, 탄산은 및 아세트산은으로 이루어진 군에서 선택된 1종 이상의 은 화합물로부터 유래된 것일 수 있다.The silver (Ag) element included in the glass frit may be derived from one or more silver compounds selected from the group consisting of silver cyanide, silver nitrate, silver halide, silver carbonate, and silver acetate.

상기 유리프릿은 상기 은 화합물, 및 텔루륨(Te) 산화물을 포함하는 금속 산화물로부터 형성될 수 있다.The glass frit may be formed from a metal oxide including the silver compound and tellurium (Te) oxide.

상기 금속 산화물은 납(Pb), 비스무스(Bi), 인(P), 게르마늄(Ge), 갈륨(Ga), 안티몬(Sb), 세륨(Se), 철(Fe), 리튬(Li), 규소(Si), 아연(Zn), 텅스텐(W), 마그네슘(Mg), 세슘(Ce), 스트론튬(Sr), 몰리브덴(Mo), 티타늄(Ti), 주석(Sn), 인듐(In), 바나듐(V), 루테늄(Ru), 바륨(Ba), 니켈(Ni), 구리(Cu), 나트륨(Na), 칼륨(K), 비소(As), 코발트(Co), 지르코늄(Zr), 망간(Mn), 네오디뮴(Nd), 크롬(Cr) 및 알루미늄(Al)의 산화물로 이루어진 군에서 선택된 1종 이상을 더 포함할 수 있다.The metal oxide is lead (Pb), bismuth (Bi), phosphorus (P), germanium (Ge), gallium (Ga), antimony (Sb), cerium (Se), iron (Fe), lithium (Li), silicon (Si), zinc (Zn), tungsten (W), magnesium (Mg), cesium (Ce), strontium (Sr), molybdenum (Mo), titanium (Ti), tin (Sn), indium (In), vanadium (V), ruthenium (Ru), barium (Ba), nickel (Ni), copper (Cu), sodium (Na), potassium (K), arsenic (As), cobalt (Co), zirconium (Zr), manganese It may further include one or more selected from the group consisting of (Mn), neodymium (Nd), chromium (Cr) and aluminum (Al).

상기 조성물은 상기 은 분말 약 60 내지 약 95 중량%; 상기 유리프릿 약 0.1 내지 약 20 중량%; 및 상기 유기비히클 약 1 내지 약 30 중량%를 포함할 수 있다.The composition comprises about 60 to about 95 weight percent of the silver powder; About 0.1 to about 20 weight percent of the glass frit; And about 1 to about 30% by weight of the organic vehicle.

상기 유리프릿은 유리프릿 전체 몰수 대비 은(Ag) 원소를 약 0.1 내지 약 50몰% 포함할 수 있다.The glass frit may include about 0.1 to about 50 mol% of silver (Ag) element relative to the total number of moles of glass frit.

상기 유리프릿은 평균입경(D50)이 약 0.1㎛ 내지 약 10㎛일 수 있다.The glass frit may have an average particle diameter (D50) of about 0.1 μm to about 10 μm.

상기 조성물은 분산제, 요변제, 가소제, 점도 안정화제, 소포제, 안료, 자외선 안정제, 산화방지제 및 커플링제로 이루어진 군으로부터 선택되는 첨가제를 1종 이상 더 포함할 수 있다.The composition may further include one or more additives selected from the group consisting of dispersants, thixotropic agents, plasticizers, viscosity stabilizers, antifoams, pigments, ultraviolet stabilizers, antioxidants and coupling agents.

본 발명의 다른 관점은 상기 태양전지 전극 형성용 조성물로 제조된 태양전지 전극에 관한 것이다.Another aspect of the invention relates to a solar cell electrode prepared from the composition for forming a solar cell electrode.

본 발명의 태양전지 전극 형성용 조성물은 이온 분해온도가 약 1000℃ 이하인 은 화합물을 유리프릿에 도입하여 전극과 웨이퍼와 접촉성을 개선하였으며, 상기 조성물로 제조된 태양전지 전극은 접촉저항(Rc)과 직렬저항(Rs)이 최소화되어 Fill Factor 및 변환효율이 우수하다.The composition for forming a solar cell electrode of the present invention introduced a silver compound having an ion decomposition temperature of about 1000 ° C. or lower into a glass frit to improve contact between the electrode and the wafer, and the solar cell electrode made of the composition had a contact resistance (Rc). Excellent fill factor and conversion efficiency due to minimization of series resistance (Rs).

도 1은 본 발명의 일 구체예에 따른 태양전지의 구조를 간략히 도시한 개략도이다.1 is a schematic diagram schematically showing the structure of a solar cell according to an embodiment of the present invention.

태양전지 전극 형성용 조성물Composition for forming solar cell electrode

본 발명의 태양전지 전극 형성용 조성물은 은(Ag) 분말; 은(Ag) 및 텔루륨(Te) 원소를 포함하는 유리프릿; 및 유기비히클;을 포함하고, 상기 유리프릿은 Ag와 Te의 몰비가 약 1 : 0.1 내지 약 1 : 25일 수 있다. 이하, 본 발명을 상세히 설명하면 다음과 같다.Composition for forming a solar cell electrode of the present invention is silver (Ag) powder; Glass frits containing silver (Ag) and tellurium (Te) elements; And an organic vehicle, wherein the glass frit may have a molar ratio of Ag and Te of about 1: 0.1 to about 1:25. Hereinafter, the present invention will be described in detail.

 

(A) 은 분말(A) silver powder

본 발명의 태양전지 전극 형성용 조성물은 도전성 분말로서 은(Ag) 분말을 사용한다. 상기 은 분말은 나노 사이즈 또는 마이크로 사이즈의 입경을 갖는 분말일 수 있다. 예를 들어 상기 은(Ag) 분말은 수십 내지 수백 나노미터 크기를 갖거나 수 내지 수십 마이크로미터의 크기를 가질 수 있다. 구체예에서는  2 이상의 서로 다른 사이즈를 갖는 은 분말을 혼합하여 사용할 수도 있다.The composition for solar cell electrode formation of this invention uses silver (Ag) powder as electroconductive powder. The silver powder may be a powder having a particle size of nano size or micro size. For example, the silver (Ag) powder may have a size of several tens to hundreds of nanometers or a size of several tens of micrometers. In the specific example, silver powders having different sizes of # 2 or more may be mixed and used.

은 분말은 입자 형상이 구형, 판상 또는 무정형 형상을 가질 수 있다The silver powder may have a spherical, plate or amorphous shape in particle shape.

은 분말은 평균입경(D50)은 바람직하게는 약 0.1㎛ 내지 약 10㎛이며, 더 바람직하게는 약 0.5㎛ 내지 약 5㎛이 될 수 있다. 상기 평균입경은 이소프로필알코올(IPA)에 도전성 분말을 초음파로 25℃에서 3분 동안 분산시킨 후 CILAS社에서 제작한 1064LD 모델을 사용하여 측정된 것이다. 상기 범위 내에서, 접촉저항과 선 저항이 낮아지는 효과를 가질 수 있다. The silver powder may have an average particle diameter (D50) of about 0.1 μm to about 10 μm, and more preferably about 0.5 μm to about 5 μm. The average particle diameter was measured using a 1064LD model manufactured by CILAS after dispersing the conductive powder in isopropyl alcohol (IPA) at 25 ° C. for 3 minutes with ultrasonic waves. Within this range, the contact resistance and the wire resistance can be lowered.

은 분말은 조성물 전체 중량 대비 약 60 내지 약 95 중량%로 포함될 수 있다. 상기 범위에서, 저항의 증가로 변환 효율이 낮아지는 것을 막을 수 있고, 유기비히클 양의 상대적인 감소로 페이스트화가 어려워지는 것을 막을 수 있다. 바람직하게는 약 70 내지 약 90 중량%, 예를 들면 71, 72, 73, 74, 75, 76, 77, 78, 79, 80, 81, 82, 83, 84, 85, 86, 87, 88, 89, 90 중량% 로 포함될 수 있다. Silver powder may comprise from about 60 to about 95 weight percent of the total weight of the composition. Within this range, it is possible to prevent the conversion efficiency from lowering due to an increase in the resistance, and to prevent pasting from becoming difficult due to the relative decrease in the amount of the organic vehicle. Preferably from about 70 to about 90 weight percent, for example 71, 72, 73, 74, 75, 76, 77, 78, 79, 80, 81, 82, 83, 84, 85, 86, 87, 88, 89, 90 wt% may be included.

 

(B) 유리프릿(B) glass frit

유리프릿(glass frit)은 태양전지 전극 형성용 조성물의 소성 공정 중 반사 방지막을 에칭(etching)하고, 은 입자를 용융시켜 저항이 낮아질 수 있도록 에미터 영역에 은 결정 입자를 생성시키고, 전도성 분말과 웨이퍼 사이의 접착력을 향상시키고 소결시에 연화하여 소성 온도를 보다 낮추는 효과를 유도한다.The glass frit etches the anti-reflection film during the firing process of the composition for forming a solar cell, generates silver crystal particles in the emitter region to melt the silver particles and lowers the resistance, and It improves the adhesion between the wafers and softens during sintering to induce an effect of lowering the firing temperature.

태양전지의 효율을 증가시키기 위하여 태양전지의 면적을 증가시키면 태양전지의 접촉저항이 높아질 수 있으므로 pn 접합(pn junction)에 대한 피해를 최소화함과 동시에 직렬저항을 최소화시켜야 한다. 또한, 다양한 면저항의 웨이퍼의 증가에 따라 소성 온도가 변동폭이 커지므로 넓은 소성 온도에서도 열안정성을 충분히 확보될 수 있는 유리프릿을 사용하는 것이 바람직하다. Increasing the area of the solar cell in order to increase the efficiency of the solar cell can increase the contact resistance of the solar cell to minimize damage to the pn junction (pn junction) and at the same time minimize the series resistance. In addition, since the variation in the firing temperature increases with the increase of the wafer of various sheet resistances, it is preferable to use a glass frit that can sufficiently secure thermal stability even at a wide firing temperature.

본 발명의 유리프릿은 은(Ag) 화합물 및 금속 산화물로부터 형성된 것이다. 구체적으로, 본 발명의 유리프릿은 은(Ag) 이온으로 분해되는 온도가 약 1000℃ 이하인 은 화합물 및 금속 산화물을 혼합, 용융, 분쇄하여 제조될 수 있다. 상기 금속 산화물은 1종 이상일 수 있다.The glass frit of the present invention is formed from silver (Ag) compounds and metal oxides. Specifically, the glass frit of the present invention may be prepared by mixing, melting, and pulverizing a silver compound and a metal oxide having a temperature of about 1000 ° C. or less decomposed into silver (Ag) ions. The metal oxide may be one or more.

상기 은 화합물은 이온 결합 화합물로서 시안화은(AgCN), 질산은(AgNO3), 할로겐화은(Ag-X), 탄산은(Ag2CO3), 아세트산은(AgC2H302) 등을 단독으로 또는 혼합하여 사용할 수 있다. 상기 할로겐화은(Ag-X)에서, X는 요오드, 플루오르, 염소 또는 브롬일 수 있으며, 바람직하게는 요오드일 수 있다.The silver compound may be used alone or as a mixture of silver cyanide (AgCN), silver nitrate (AgNO3), silver halide (Ag-X), silver carbonate (Ag2CO3), silver acetate (AgC2H302) and the like as the ion-bonding compound. In the silver halide (Ag-X), X may be iodine, fluorine, chlorine or bromine, preferably iodine.

일 구체예로서, 상기 금속 산화물은 텔루륨(Te) 산화물을 포함하며, 상기 텔루륨(Te) 산화물 이외에 납(Pb), 비스무스(Bi), 인(P), 게르마늄(Ge), 갈륨(Ga), 안티몬(Sb), 세륨(Ce), 철(Fe), 리튬(Li), 규소(Si), 아연(Zn), 텅스텐(W), 마그네슘(Mg), 세슘(Cs), 스트론튬(Sr), 몰리브덴(Mo), 티타늄(Ti), 주석(Sn), 인듐(In), 바나듐(V), 루테늄(Ru), 바륨(Ba), 니켈(Ni), 구리(Cu), 나트륨(Na), 칼륨(K), 비소(As), 코발트(Co), 지르코늄(Zr), 망간(Mn), 네오디뮴(Nd), 크롬(Cr) 및 알루미늄(Al)의 산화물로 이루어진 군에서 선택된 1종 이상을 더 포함할 수 있다. In one embodiment, the metal oxide comprises tellurium (Te) oxide, and lead (Pb), bismuth (Bi), phosphorus (P), germanium (Ge), gallium (Ga) in addition to the tellurium (Te) oxide ), Antimony (Sb), cerium (Ce), iron (Fe), lithium (Li), silicon (Si), zinc (Zn), tungsten (W), magnesium (Mg), cesium (Cs), strontium (Sr) ), Molybdenum (Mo), titanium (Ti), tin (Sn), indium (In), vanadium (V), ruthenium (Ru), barium (Ba), nickel (Ni), copper (Cu), sodium (Na) ), Potassium (K), arsenic (As), cobalt (Co), zirconium (Zr), manganese (Mn), neodymium (Nd), chromium (Cr) and one selected from the group consisting of oxides of aluminum (Al) It may further include the above.

상기 은 화합물 및 금속 산화물로 제조된 본 발명의 유리프릿은 은(Ag) 및 텔루륨(Te) 원소를 포함할 수 있고, 유리프릿 내에 존재하는 Ag와 Te 의 몰비는 약 1 : 0.1 내지 약 1 : 25이다. 상기 범위에서 낮은 직렬저항 및 접촉저항을 확보할 수 있다. 구체예에서는 상기 유리프릿 내에 존재하는 Ag와 Te 의 몰비는 1 : 0.3 내지 1 : 24, 예를 들면 1 : 1 내지 1 : 21 일 수 있다. 본 명세서에 몰비는 각 원소의 몰비를 의미한다.The glass frit of the present invention made of the silver compound and the metal oxide may include silver (Ag) and tellurium (Te) elements, and the molar ratio of Ag and Te present in the glass frit is about 1: 0.1 to about 1 : 25. Low series resistance and contact resistance can be ensured in the above range. In embodiments, the molar ratio of Ag and Te present in the glass frit may be 1: 0.3 to 1:24, for example, 1: 1 to 1:21. As used herein, the molar ratio means the molar ratio of each element.

다른 예로서, 상기 유리프릿은 납(Pb), 비스무스(Bi), 인(P), 게르마늄(Ge), 갈륨(Ga), 안티몬(Sb), 세륨(Ce), 철(Fe), 리튬(Li), 규소(Si), 아연(Zn), 텅스텐(W), 마그네슘(Mg), 세슘(Cs), 스트론튬(Sr), 몰리브덴(Mo), 티타늄(Ti), 주석(Sn), 인듐(In), 바나듐(V), 루테늄(Ru), 바륨(Ba), 니켈(Ni), 구리(Cu), 나트륨(Na), 칼륨(K), 비소(As), 코발트(Co), 지르코늄(Zr), 망간(Mn), 네오디뮴(Nd), 크롬(Cr) 및 알루미늄(Al)으로 이루어진 군에서 선택된 1종 이상의 원소를 더 포함할 수 있다. As another example, the glass frit may include lead (Pb), bismuth (Bi), phosphorus (P), germanium (Ge), gallium (Ga), antimony (Sb), cerium (Ce), iron (Fe), and lithium ( Li, silicon (Si), zinc (Zn), tungsten (W), magnesium (Mg), cesium (Cs), strontium (Sr), molybdenum (Mo), titanium (Ti), tin (Sn), indium ( In), vanadium (V), ruthenium (Ru), barium (Ba), nickel (Ni), copper (Cu), sodium (Na), potassium (K), arsenic (As), cobalt (Co), zirconium ( It may further include one or more elements selected from the group consisting of Zr), manganese (Mn), neodymium (Nd), chromium (Cr) and aluminum (Al).

또한, 상기 유리프릿은 유리프릿 전체 몰수 대비 은(Ag) 원소를 약 0.1 내지 약 50 몰% 함유할 수 있으며, 바람직하게는 약 0.5 내지 약 40 몰% 함유할 수 있다. In addition, the glass frit may contain about 0.1 to about 50 mol% of silver (Ag) element relative to the total number of moles of glass frit, and preferably about 0.5 to about 40 mol%.

상기 유리프릿이 포함하는 각 금속 원소의 함량은 유도결합플라즈마-원자방출분광법(ICP-OES; Inductively Coupled Plasma - Optical Emission Spectrometer)에 의하여 측정될 수 있다. 상기 유도결합플라즈마-원자방출분광법(ICP-OES)은 매우 적은 양의 시료를 사용하므로 시료 준비 시간을 단축할 수 있고, 시료 전처리에 의한 오차를 줄일 수 있으며 분석 감도가 우수한 이점이 있다.The content of each metal element included in the glass frit can be measured by Inductively Coupled Plasma-Optical Emission Spectrometer (ICP-OES). Since the inductively coupled plasma-atomic emission spectroscopy (ICP-OES) uses a very small amount of sample, it can shorten the sample preparation time, reduce the error due to sample pretreatment, and have an excellent analysis sensitivity.

구체적으로, 상기 유도결합플라즈마-원자방출분광법(ICP-OES)은 시료를 전처리 하는 단계, 표준용액을 준비하는 단계, 및 측정 대상 원소의 농도를 측정 및 환산하여 유리프릿 내 존재하는 각 원소의 함량을 정밀하게 측정할 수 있다.Specifically, the inductively coupled plasma-atomic emission spectroscopy (ICP-OES) is a step of pre-treating a sample, preparing a standard solution, and measuring and converting the concentration of the element to be measured to determine the content of each element present in the glass frit. Can be measured precisely.

상기 시료를 전처리하는 단계는 시료인 유리프릿을 용해할 수 있는 산성용액을 이용하여 시료를 적당량 용해하고 가열하여 시료를 탄화시킬 수 있다. 상기 산성용액은 예로서 황산(H2SO4) 용액 등을 사용할 수 있다.The pretreatment of the sample may carbonize the sample by dissolving and heating the sample in an appropriate amount using an acid solution capable of dissolving the glass frit as a sample. As the acid solution, for example, a sulfuric acid (H 2 SO 4) solution or the like may be used.

상기 탄화된 시료는 증류수, 과산화수소(H2O2) 등의 용매로 분석대상 원소의 분석농도 범위까지 적당히 희석할 수 있다. 상기 분석농도 범위는 적용되는 ICP-OES 기기의 원소 검출능력을 고려하여 약 10,000배까지 희석된 상태로 사용할 수 있다.The carbonized sample may be appropriately diluted to a range of analytical concentration of the element to be analyzed with a solvent such as distilled water and hydrogen peroxide (H 2 O 2). The analytical concentration range may be used in a diluted state of about 10,000 times in consideration of the element detection capability of the applied ICP-OES device.

상기 전처리된 시료는 ICP-OES 기기로 측정시 표준용액, 예를 들면, 원소 측정용 분석대상 원소의 표준용액으로 교정(calibration)할 수 있다.The pretreated sample may be calibrated with a standard solution, for example, a standard solution of an element to be analyzed for element measurement when measured with an ICP-OES instrument.

예로서, 상기 표준용액을 ICP-OES 측정기기에 도입하여 외부 표준법(external standard method)으로 검정곡선(calibration curve)을 작성한 후 상기 ICP-OES 측정기기로 전처리된 시료의 분석대상 금속 원소의 농도(ppm)를 측정한 후 환산하여 유리프릿 내 각 원소의 몰비를 계산할 수 있다.For example, by introducing the standard solution into the ICP-OES measuring device to create a calibration curve by an external standard method (concentration) of the metal element to be analyzed of the sample pre-treated with the ICP-OES measuring device ( ppm) can be measured and converted to calculate the molar ratio of each element in the glass frit.

상기 유리프릿은 통상의 방법을 사용하여 상기 기술된 은 화합물 및 금속 산화물로부터 제조할 수 있다. 예를 들면, 상기 은 화합물 및 금속 산화물의 조성으로 혼합한다. 혼합은 볼 밀(ball mill) 또는 플라네터리 밀(planetary mill)을 사용하여 혼합할 수 있다. 혼합된 조성물을 약 800℃ 내지 약 1300℃의 조건에서 용융시키고, 25℃에서 퀀칭(quenching)한다. 얻은 결과물을 디스크 밀(disk mill), 플라네터리 밀 등에 의해 분쇄하여 유리프릿을 얻을 수 있다. The glass frit can be prepared from the silver compounds and metal oxides described above using conventional methods. For example, it mixes with the composition of the said silver compound and a metal oxide. Mixing can be performed using a ball mill or planetary mill. The mixed composition is melted at conditions of about 800 ° C. to about 1300 ° C. and quenched at 25 ° C. The obtained result can be ground by a disk mill, planetary mill or the like to obtain a glass frit.

상기 유리프릿은 평균입경(D50)이 약 0.1 내지 약 10㎛인 것이 사용될 수 있으며, 상기 유리프릿의 형상은 구형이어도 부정형상이어도 무방하다.The glass frit may have an average particle diameter (D50) of about 0.1 to about 10㎛, the shape of the glass frit may be spherical or irregular.

상기 유리프릿은 태양전지 전극 형성용 조성물 전체 중량 대비 약 0.1 내지 약 20 중량%, 바람직하게는 약 0.5 내지 약 10 중량%, 예를 들면, 1, 2, 2.5, 3, 3.5, 4, 4.5, 5, 5.5, 6, 6.5, 7, 8, 9, 10 중량% 로 포함되는 것이 바람직하다. 상기 범위로 함유되는 경우, 다양한 면저항 하에서 pn 접합 안정성을 확보할 수 있고 직렬저항 값을 최소화시킬 수 있으며, 종국적으로 태양전지의 효율을 개선할 수 있다. The glass frit is about 0.1 to about 20% by weight, preferably about 0.5 to about 10% by weight, for example 1, 2, 2.5, 3, 3.5, 4, 4.5, It is preferably included in 5, 5.5, 6, 6.5, 7, 8, 9, 10% by weight. When it is contained in the above range, it is possible to ensure the pn junction stability under various sheet resistance, to minimize the series resistance value, and finally to improve the efficiency of the solar cell.

 

(C) 유기비히클(C) organic vehicle

유기비히클은 태양전지 전극 형성용 조성물의 무기성분과 기계적 혼합을 통하여 조성물에 인쇄에 적합한 점도 및 유변학적 특성을 부여한다.The organic vehicle imparts suitable viscosity and rheological properties to the composition through mechanical mixing with the inorganic component of the composition for forming a solar cell electrode.

상기 유기비히클은 통상적으로 태양전지 전극 형성용 조성물에 사용되는 유기비히클이 사용될 수 있는데, 통상 바인더 수지와 용매 등을 포함할 수 있다.The organic vehicle may be an organic vehicle that is typically used in a composition for forming a solar cell electrode, and may include a binder resin and a solvent.

상기 바인더 수지로는 아크릴레이트계 또는 셀룰로오스계 수지 등을 사용할 수 있다. 구체예에서는 상기 바인더 수지로 에틸 셀룰로오스가 사용될 수 있다. 다른 구체예에서는 상기 바인더 수지로 에틸 하이드록시에틸 셀룰로오스, 니트로 셀룰로오스, 에틸 셀룰로오스와 페놀 수지의 혼합물, 알키드 수지, 페놀계 수지, 아크릴산 에스테르계 수지, 크실렌계 수지, 폴리부텐계 수지, 폴리에스테르계 수지, 요소계 수지, 멜라민계 수지, 초산비닐계 수지, 목재 로진(rosin) 또는 알콜의 폴리메타크릴레이트 등을 사용할 수도 있다.As the binder resin, an acrylate-based or cellulose-based resin can be used. In embodiments, ethyl cellulose may be used as the binder resin. In another embodiment, the binder resin is ethyl hydroxyethyl cellulose, nitro cellulose, a mixture of ethyl cellulose and phenol resin, alkyd resin, phenol resin, acrylic ester resin, xylene resin, polybutene resin, polyester resin. , Urea-based resins, melamine-based resins, vinyl acetate-based resins, wood rosins, or polymethacrylates of alcohols.

상기 용매로는 예를 들어, 헥산, 톨루엔, 에틸셀로솔브, 시클로헥사논, 부틸셀로솔브, 부틸 카비톨(디에틸렌 글리콜 모노부틸 에테르), 디부틸 카비톨(디에틸렌 글리콜 디부틸 에테르), 부틸 카비톨 아세테이트(디에틸렌 글리콜 모노부틸 에테르 아세테이트), 프로필렌 글리콜 모노메틸 에테르, 헥실렌 글리콜, 터핀올(Terpineol), 메틸에틸케톤, 벤질알콜, 감마부티로락톤 또는 에틸락테이트 등을 단독 또는 2종 이상 혼합하여 사용할 수 있다. As the solvent, for example, hexane, toluene, ethyl cellosolve, cyclohexanone, butyl cellosolve, butyl carbitol (diethylene glycol monobutyl ether), dibutyl carbitol (diethylene glycol dibutyl ether) Butyl carbitol acetate (diethylene glycol monobutyl ether acetate), propylene glycol monomethyl ether, hexylene glycol, terpineol, methyl ethyl ketone, benzyl alcohol, gamma butyrolactone or ethyl lactate alone or the like It can mix and use 2 or more types.

상기 유기비히클은 태양전지 전극 형성용 조성물 전체 중량 대비 약 1 내지 약 30 중량%로 포함될 수 있다. 상기 범위에서 충분한 접착강도와 우수한 인쇄성을 확보할 수 있다. The organic vehicle may be included in about 1 to about 30% by weight based on the total weight of the composition for forming a solar cell electrode. It is possible to secure sufficient adhesive strength and excellent printability in the above range.

 

(D) 첨가제(D) additive

본 발명의 태양전지 전극 형성용 조성물은 상기에서 기술한 구성 요소 외에 유동 특성, 공정 특성 및 안정성을 향상시키기 위하여 필요에 따라 통상의 첨가제를 더 포함할 수 있다. 상기 첨가제는 분산제, 요변제, 가소제, 점도 안정화제, 소포제, 안료, 자외선 안정제, 산화방지제, 커플링제 등을 단독 또는 2종 이상 혼합하여 사용할 수 있다. 이들은 태양전지 전극 형성용 조성물 전체 중량 대비 약 0.1 내지 약 5 중량%로 포함될 수 있지만 필요에 따라 함량을 변경할 수 있다.The composition for forming a solar cell electrode of the present invention may further include a conventional additive as needed to improve the flow characteristics, process characteristics and stability in addition to the components described above. The additive may be used alone or in combination of two or more of a dispersant, thixotropic agent, plasticizer, viscosity stabilizer, antifoaming agent, pigment, ultraviolet stabilizer, antioxidant, coupling agent and the like. They may be included in about 0.1 to about 5% by weight relative to the total weight of the composition for forming a solar cell electrode, but may be changed in content as necessary.

 

태양전지 전극 및 이를 포함하는 태양전지Solar cell electrode and solar cell comprising same

본 발명의 다른 관점은 상기 태양전지 전극 형성용 조성물로부터 형성된 전극 및 이를 포함하는 태양전지에 관한 것이다. 도 1은 본 발명의 한 구체예에 따른 태양전지의 구조를 나타낸 것이다.Another aspect of the invention relates to an electrode formed from the composition for forming a solar cell electrode and a solar cell comprising the same. 1 illustrates a structure of a solar cell according to an embodiment of the present invention.

도 1을 참조하면, p층(또는 n층)(101) 및 에미터로서의 n층(또는 p층)(102)을 포함하는 웨이퍼(100) 또는 기판 상에, 전극 형성용 조성물을 인쇄하고 소성하여 후면 전극(210) 및 전면 전극(230)을 형성할 수 있다. 예컨대, 전극 형성용 조성물을 웨이퍼의 후면에 인쇄 도포한 후, 대략 200℃ 내지 400℃ 온도로 대략 10 내지 60초 정도 건조하여 후면 전극을 위한 사전 준비 단계를 수행할 수 있다. 또한, 웨이퍼의 전면에 전극 형성용 조성물을 인쇄한 후 건조하여 전면 전극을 위한 사전 준비단계를 수행할 수 있다. 이후에, 약 400℃ 내지 약 950℃, 바람직하게는 약 700℃ 내지 약 950℃에서 약 30초 내지 약 210초 소성하는 소성 과정을 수행하여 전면 전극 및 후면 전극을 형성할 수 있다. Referring to FIG. 1, a composition for forming an electrode is printed and baked on a wafer 100 or a substrate including a p layer (or n layer) 101 and an n layer (or p layer) 102 as an emitter. Thus, the rear electrode 210 and the front electrode 230 may be formed. For example, the electrode forming composition may be printed on the back side of the wafer and then dried at a temperature of about 200 ° C. to 400 ° C. for about 10 to 60 seconds to perform a preliminary preparation step for the back electrode. In addition, the composition for forming an electrode on the front surface of the wafer may be printed and dried to perform a preliminary preparation step for the front electrode. Thereafter, a firing process may be performed at about 400 ° C. to about 950 ° C., preferably about 700 ° C. to about 950 ° C., for about 30 seconds to about 210 seconds to form a front electrode and a rear electrode.

이하, 실시예를 통하여 본 발명을 보다 구체적으로 설명하고자 하나, 이러한 실시예들은 단지 설명의 목적을 위한 것으로, 본 발명을 제한하는 것으로 해석되어서는 안 된다.Hereinafter, the present invention will be described in more detail with reference to examples, but these examples are for illustrative purposes only and should not be construed as limiting the present invention.

 

실시예 1-93 및 비교예 1-2Examples 1-93 and Comparative Examples 1-2

실시예 1Example 1

유기 바인더로서 에틸셀룰로오스(Dow chemical company, ETHOCEL STD4) 3.0 중량%를 용매인 부틸 카비톨(Butyl Carbitol) 6.5 중량%에 60℃에서 충분히 용해한 후 평균입경이 2.0㎛인 구형의 은 분말(Dowa Hightech CO. LTD, AG-4-8) 86.90 중량%, 은 화합물로 시안화은(AgCN)을 사용하고 하기 표 1의 조성으로 제조된 유리프릿 3.1 중량%, 첨가제로서 분산제 DISPER BYK102(BYK-chemie) 0.2 중량% 및 요변제 Thixatrol ST(Elementis co.) 0.3 중량% 투입하여 골고루 믹싱 후 3롤 혼련기로 혼합 분산시켜 태양전지 전극 형성용 조성물을 준비하였다.Spherical silver powder (Dowa Hightech CO) having an average particle diameter of 2.0 μm after dissolving 3.0 wt% of ethyl cellulose (DTH chemical company, ETHOCEL STD4) as an organic binder in 6.5 wt% of solvent butyl carbitol at 60 ° C. LTD, AG-4-8) 86.90% by weight, 3.1% by weight of glass frit using silver cyanide (AgCN) as a silver compound and prepared in the composition of Table 1, 0.2% by weight of dispersant DISPER BYK102 (BYK-chemie) as an additive And thixoatrol ST (Elementis co.) 0.3 wt% was added and mixed evenly after mixing evenly mixed with a three-roll kneader to prepare a composition for forming a solar cell electrode.

 

실시예 2 내지 18 Examples 2-18

하기 표 1의 조성으로 제조된 유리프릿을 사용한 것을 제외하고는 실시예 1과 같은 방법으로 태양전지 전극 형성용 조성물을 준비하였다. A composition for forming a solar cell electrode was prepared in the same manner as in Example 1, except that the glass frit prepared with the composition of Table 1 was used.

 

실시예 19 내지 36Examples 19-36

은 화합물로 질산은(AgNO3)을 사용하고, 하기 표 2의 조성으로 제조된 유리프릿을 사용한 것을 제외하고는 실시예 1과 같은 방법으로 태양전지 전극 형성용 조성물을 준비하였다. Silver nitrate (AgNO3) was used as the silver compound, and a composition for forming a solar cell electrode was prepared in the same manner as in Example 1 except for using the glass frit prepared with the composition of Table 2 below.

 

실시예 37 내지 54Examples 37-54

은 화합물로 요오드화은(AgI)을 사용하고, 하기 표 3의 조성으로 제조된 유리프릿을 사용한 것을 제외하고는 실시예 1과 같은 방법으로 태양전지 전극 형성용 조성물을 준비하였다. Silver iodide (AgI) was used as the silver compound, and a composition for forming a solar cell electrode was prepared in the same manner as in Example 1 except for using the glass frit prepared with the composition of Table 3 below.

 

실시예 55 내지 72Examples 55-72

은 화합물로 탄산은(Ag2CO3)을 사용하고, 하기 표 4의 조성으로 제조된 유리프릿을 사용한 것을 제외하고는 실시예 1과 같은 방법으로 태양전지 전극 형성용 조성물을 준비하였다. Silver carbonate (Ag2CO3) was used as the silver compound, and a composition for forming a solar cell electrode was prepared in the same manner as in Example 1 except for using the glass frit prepared with the composition of Table 4 below.

 

실시예 73 내지 93Examples 73-93

은 화합물로 아세트산은(AgC2H3O2)을 사용하고, 하기 표 5의 조성으로 제조된 유리프릿을 사용한 것을 제외하고는 실시예 1과 같은 방법으로 태양전지 전극 형성용 조성물을 준비하였다. A silver compound (AgC 2 H 3 O 2) was used as the silver compound, and a composition for forming a solar cell electrode was prepared in the same manner as in Example 1 except for using the glass frit prepared in the composition of Table 5 below.

 

비교예 1 내지 2Comparative Examples 1 and 2

하기 표 6의 조성으로 제조된 유리프릿을 사용한 것을 제외하고는, 실시예 1과 같은 방법으로 태양전지 전극 형성용 조성물을 준비하였다.A composition for forming a solar cell electrode was prepared in the same manner as in Example 1, except that the glass frit prepared with the composition of Table 6 was used.

 

유도결합플라즈마-원자방출분광법(ICP-OES)을 이용한 유리프릿 내 Ag : Te의 몰비 측정Determination of the molar ratio of Ag to Te in glass frit using inductively coupled plasma-atomic emission spectroscopy (ICP-OES)

시료의 전처리 : 분석대상 시료인 유리프릿 0.5g을 비커에 담고 0.0001g 단위까지 정확하게 칭량한다. 시료가 담겨진 비커에 황산(H2SO4) 5ml를 투입 후 열판(hot plate)를 이용하여 220℃에서 3시간 동안 가열하여 시료를 완전히 탄화시켰다. 탄화된 시료가 담겨진 비커가 투명하게 될 때까지 과산화수소(H2O2)를 투입하여 전처리를 완료하였다.Pretreatment of the sample: 0.5g of glass frit, the sample to be analyzed, is placed in a beaker and accurately weighed to 0.0001g. 5 ml of sulfuric acid (H 2 SO 4) was added to a beaker containing the sample, and the sample was completely carbonized by heating at 220 ° C. for 3 hours using a hot plate. Pretreatment was completed by adding hydrogen peroxide (H 2 O 2) until the beaker containing the carbonized sample became transparent.

표준용액의 준비 : 분석대상 원소인 은(Ag) 원소 및 텔루륨(Te) 원소의 표준용액을 각각 준비하였다. Preparation of Standard Solution : Standard solutions of the silver (Ag) and tellurium (Te) elements, which are the analysis target elements, were prepared, respectively.

Ag : Te의 몰비 측정 : 전처리가 완료된 시료가 담겨진 비커에 질산(HNO3)을 투입하여 5분간 가열 후 공냉하였다. 준비된 표준용액을 ICP-OES 측정기기(PerkinElmer社)에 도입하여 외부 표준법(external standard method)으로 검정곡선(calibration curve)을 작성한 후 상기 ICP-OES 측정기기로 시료 내에 포함되는 분석대상 원소인 Ag 및 Te의 원소 농도(ppm)를 각각 측정한 후 환산하여 유리프릿 내 Ag : Te의 몰비를 계산하였다. 결과 값 중 일부를 하기 표 7에 대표적으로 나타내었다. Measurement of the molar ratio of Ag: Te : Nitric acid (HNO 3) was added to a beaker containing the pretreated sample, followed by heating for 5 minutes, followed by air cooling. The prepared standard solution was introduced into an ICP-OES measuring instrument (PerkinElmer, Inc.) to prepare a calibration curve by an external standard method, and Ag and Ag, which are analytes included in the sample, were measured by the ICP-OES measuring instrument. The molar ratio of Ag: Te in the glass frit was calculated by measuring the element concentration (ppm) of Te, respectively. Some of the results are representatively shown in Table 7 below.

 

각 원소의 함량(%) = 각 원소의 농도(ppm)×Dilution Factor(DF)/10000Content (%) of each element = concentration (ppm) of each element x Dilution Factor (DF) / 10000

각 원소의 mole = 각 원소의 함량 / 각 원소의 분자량Mole of each element = content of each element / molecular weight of each element

Ag : Te의 몰비(mole ratio) = 1 : (Te의 mole/Ag의 mole)Mole ratio of Ag: Te = 1: (mole of Te / mole of Ag)

[표 1]TABLE 1

Figure PCTKR2014005762-appb-I000001
Figure PCTKR2014005762-appb-I000001

[표 2]TABLE 2

Figure PCTKR2014005762-appb-I000002
Figure PCTKR2014005762-appb-I000002

[표 3]TABLE 3

Figure PCTKR2014005762-appb-I000003
Figure PCTKR2014005762-appb-I000003

[표 4]TABLE 4

Figure PCTKR2014005762-appb-I000004
Figure PCTKR2014005762-appb-I000004

[표 5]TABLE 5

Figure PCTKR2014005762-appb-I000005
Figure PCTKR2014005762-appb-I000005

[표 6]TABLE 6

Figure PCTKR2014005762-appb-I000006
Figure PCTKR2014005762-appb-I000006

[표 7]TABLE 7

Figure PCTKR2014005762-appb-I000007
Figure PCTKR2014005762-appb-I000007

접촉저항의 측정방법 Measurement method of contact resistance

상기 실시예 및 비교예에서 준비된 태양전지 전극 형성용 조성물을 결정계 모노 웨이퍼(Wafer) 전면에 일정한 패턴으로 스크린 프린팅하여 인쇄하고, 적외선 건조로를 사용하여 건조시켰다. 상기 과정으로 형성된 Cell을 벨트형 소성로를 사용하여 700 내지 950℃ 사이로 30초에서 210초간 소성을 행하였으며, 이렇게 제조 완료된 Cell은 TLM(Transfer Length Method) 측정장비를 사용하여 태양전지의 접촉저항(Rc)을 측정하여 하기 표 8 내지 13에 각각 나타내었다.The composition for forming a solar cell electrode prepared in Examples and Comparative Examples was printed by screen printing in a predetermined pattern on the entire surface of a crystalline mono wafer (Wafer), and dried using an infrared drying furnace. The cell formed by the above process was calcined for 30 seconds to 210 seconds between 700 to 950 ° C. using a belt type kiln, and the cell thus manufactured was contacted (Rc) of the solar cell using a TLM (Transfer Length Method) measuring equipment. ) Was measured and shown in Tables 8 to 13, respectively.

직렬저항, Fill Factor 및 Efficiency 측정방법Method of measuring series resistance, fill factor and efficiency

상기 실시예 및 비교예에 따른 태양전지 전극 형성용 조성물을 결정계 모노 웨이퍼(Wafer) 전면에 일정한 패턴으로 스크린 프린팅하여 인쇄하고, 적외선 건조로를 사용하여 건조시켰다. 이후 Wafer의 후면에 알루미늄 페이스트를 후면 인쇄한 후 동일한 방법으로 건조하였다. 상기 과정으로 형성된 Cell을 벨트형 소성로를 사용하여 700 내지 950℃ 온도 범위에서 30초에서 210초 동안 소성하였으며, 이렇게 제조 완료된 셀(Cell)은 태양전지효율 측정장비 (Pasan社, CT-801)를 사용하여 태양전지의 직렬저항(Rs), Fill Factor(FF, %) 및 변환효율(%)을 측정하여 하기 표 8 내지 13에 각각 나타내었다.The composition for forming a solar cell electrode according to the above Examples and Comparative Examples was printed by screen printing in a predetermined pattern on the entire surface of a crystalline mono wafer (Wafer), and dried using an infrared drying furnace. After printing the aluminum paste on the back of the back of the wafer and dried in the same manner. The cell formed by the above process was fired for 30 seconds to 210 seconds in a temperature range of 700 to 950 ° C. using a belt-type kiln, and the cell thus manufactured was manufactured using a solar cell efficiency measuring device (Pasan, CT-801). The series resistance (Rs), fill factor (FF,%) and conversion efficiency (%) of the solar cell were measured and shown in Tables 8 to 13, respectively.

[표 8]TABLE 8

Figure PCTKR2014005762-appb-I000008
Figure PCTKR2014005762-appb-I000008

[표 9]TABLE 9

Figure PCTKR2014005762-appb-I000009
Figure PCTKR2014005762-appb-I000009

[표 10]TABLE 10

Figure PCTKR2014005762-appb-I000010
Figure PCTKR2014005762-appb-I000010

[표 11]TABLE 11

Figure PCTKR2014005762-appb-I000011
Figure PCTKR2014005762-appb-I000011

[표 12]TABLE 12

Figure PCTKR2014005762-appb-I000012
Figure PCTKR2014005762-appb-I000012

[표 13]TABLE 13

Figure PCTKR2014005762-appb-I000013
Figure PCTKR2014005762-appb-I000013

상기 표 8 내지 13의 결과에서 확인할 수 있듯이, 유리프릿 내 Ag와 Te의 몰비가 1 : 0.1 내지 1 : 25인 실시예 1 내지 93의 전극은 Ag와 Te의 몰비가 상기 범위를 벗어나는 비교예 1 및 은(Ag) 원소를 포함하지 않는 비교예 2의 전극에 비하여 접촉저항 및 직렬저항이 낮고, Fill Factor와 변환효율이 우수한 것을 확인할 수 있다. As can be seen from the results of Tables 8 to 13, the electrodes of Examples 1 to 93 in which the molar ratio of Ag and Te in the glass frit is 1: 0.1 to 1:25 are Comparative Examples 1 in which the molar ratio of Ag and Te is outside the above range. And compared with the electrode of the comparative example 2 which does not contain a silver (Ag) element, it can be seen that it is low in contact resistance and series resistance, and excellent in Fill Factor and conversion efficiency.

본 발명의 단순한 변형 내지 변경은 이 분야의 통상의 지식을 가진 자에 의하여 용이하게 실시될 수 있으며, 이러한 변형이나 변경은 모두 본 발명의 영역에 포함되는 것으로 볼 수 있다.Simple modifications or changes of the present invention can be easily carried out by those skilled in the art, and all such modifications or changes can be seen to be included in the scope of the present invention.

Claims (10)

은(Ag) 분말; Silver (Ag) powder; 은(Ag) 및 텔루륨(Te) 원소를 포함하는 유리프릿; 및 Glass frits containing silver (Ag) and tellurium (Te) elements; And 유기비히클;을 포함하고,Including an organic vehicle, 상기 유리프릿은 Ag와 Te의 몰비가 1 : 0.1 내지 1 : 25인 것을 특징으로 하는 태양전지 전극 형성용 조성물.The glass frit is a composition for forming a solar cell electrode, characterized in that the molar ratio of Ag and Te is 1: 0.1 to 1: 25. 제1항에 있어서,The method of claim 1, 상기 유리프릿은 납(Pb), 비스무스(Bi), 인(P), 게르마늄(Ge), 갈륨(Ga), 세륨(Ce), 철(Fe), 리튬(Li), 규소(Si), 아연(Zn), 텅스텐(W), 마그네슘(Mg), 세슘(Cs), 스트론튬(Sr), 몰리브덴(Mo), 티타늄(Ti), 주석(Sn), 인듐(In), 바나듐(V), 루테늄(Ru), 바륨(Ba), 니켈(Ni), 구리(Cu), 나트륨(Na), 칼륨(K), 비소(As), 코발트(Co), 지르코늄(Zr), 망간(Mn), 네오디뮴(Nd), 크롬(Cr) 및 알루미늄(Al)으로 이루어진 군에서 선택된 1종 이상의 원소를 더 포함하는 것을 특징으로 하는 태양전지 전극 형성용 조성물. The glass frit is lead (Pb), bismuth (Bi), phosphorus (P), germanium (Ge), gallium (Ga), cerium (Ce), iron (Fe), lithium (Li), silicon (Si), zinc (Zn), tungsten (W), magnesium (Mg), cesium (Cs), strontium (Sr), molybdenum (Mo), titanium (Ti), tin (Sn), indium (In), vanadium (V), ruthenium (Ru), Barium (Ba), Nickel (Ni), Copper (Cu), Sodium (Na), Potassium (K), Arsenic (As), Cobalt (Co), Zirconium (Zr), Manganese (Mn), Neodymium (Nd), chromium (Cr) and aluminum (Al) composition for forming a solar cell electrode, characterized in that it further comprises at least one element selected from the group consisting of. 제1항에 있어서,The method of claim 1, 상기 유리프릿이 포함하는 은(Ag) 원소는 시안화은, 질산은, 할로겐화은, 탄산은 및 초산은으로 이루어진 군에서 선택된 1종 이상의 은 화합물로부터 유래된 것을 특징으로 하는 태양전지 전극 형성용 조성물.The silver (Ag) element included in the glass frit is a silver cyanide, silver nitrate, silver halide, silver carbonate, and silver acetate is a composition for forming a solar cell electrode, characterized in that derived from at least one silver compound selected from the group consisting of. 제3항에 있어서,The method of claim 3, 상기 유리프릿은 상기 은 화합물, 및 텔루륨(Te) 산화물을 포함하는 금속 산화물로부터 형성된 것을 특징으로 하는 태양전지 전극 형성용 조성물.The glass frit is a composition for forming a solar cell electrode, characterized in that formed from a metal oxide containing the silver compound and tellurium (Te) oxide. 제4항에 있어서, The method of claim 4, wherein 상기 금속 산화물은 납(Pb), 비스무스(Bi), 인(P), 게르마늄(Ge), 갈륨(Ga), 세륨(Se), 철(Fe), 리튬(Li), 규소(Si), 아연(Zn), 텅스텐(W), 마그네슘(Mg), 세슘(Ce), 스트론튬(Sr), 몰리브덴(Mo), 티타늄(Ti), 주석(Sn), 인듐(In), 바나듐(V), 루테늄(Ru), 바륨(Ba), 니켈(Ni), 구리(Cu), 나트륨(Na), 칼륨(K), 비소(As), 코발트(Co), 지르코늄(Zr), 망간(Mn), 네오디뮴(Nd), 크롬(Cr) 및 알루미늄(Al)의 산화물로 이루어진 군에서 선택된 1종 이상을 더 포함하는 것을 특징으로 하는 태양전지 전극 형성용 조성물.The metal oxide is lead (Pb), bismuth (Bi), phosphorus (P), germanium (Ge), gallium (Ga), cerium (Se), iron (Fe), lithium (Li), silicon (Si), zinc (Zn), tungsten (W), magnesium (Mg), cesium (Ce), strontium (Sr), molybdenum (Mo), titanium (Ti), tin (Sn), indium (In), vanadium (V), ruthenium (Ru), Barium (Ba), Nickel (Ni), Copper (Cu), Sodium (Na), Potassium (K), Arsenic (As), Cobalt (Co), Zirconium (Zr), Manganese (Mn), Neodymium The composition for forming a solar cell electrode, characterized in that it further comprises at least one selected from the group consisting of oxides of (Nd), chromium (Cr) and aluminum (Al). 제1항에 있어서,The method of claim 1, 상기 은 분말 60 내지 95 중량%; 60 to 95 wt% of the silver powder; 상기 유리프릿 0.1 내지 20 중량%; 및 0.1 to 20% by weight of the glass frit; And 상기 유기비히클 1 내지 30 중량%를 포함하는 것을 특징으로 하는 태양전지 전극 형성용 조성물.The composition for forming a solar cell electrode, characterized in that it comprises 1 to 30% by weight of the organic vehicle. 제1항에 있어서,The method of claim 1, 상기 유리프릿은 유리프릿 전체 몰수 대비 은(Ag) 원소를 0.1 내지 50몰% 포함하는 것을 특징으로 하는 태양전지 전극 형성용 조성물.The glass frit is a composition for forming a solar cell electrode, characterized in that containing 0.1 to 50 mol% of silver (Ag) element relative to the total number of moles of glass frit. 제1항에 있어서, The method of claim 1, 상기 유리프릿은 평균입경(D50)이 0.1㎛ 내지 10㎛인 것을 특징으로 하는 태양전지 전극 형성용 조성물.The glass frit has a composition for forming a solar cell electrode, characterized in that the average particle diameter (D50) is 0.1㎛ to 10㎛. 제1항에 있어서, The method of claim 1, 상기 조성물은 분산제, 요변제, 가소제, 점도 안정화제, 소포제, 안료, 자외선 안정제, 산화방지제 및 커플링제로 이루어진 군으로부터 선택되는 첨가제를 1종 이상 더 포함하는 것을 특징으로 하는 태양전지 전극 형성용 조성물.The composition is a composition for forming a solar cell electrode, characterized in that it further comprises at least one additive selected from the group consisting of dispersants, thixotropic agents, plasticizers, viscosity stabilizers, defoamers, pigments, ultraviolet stabilizers, antioxidants and coupling agents. . 제1항 내지 제9항 중 어느 한 항의 태양전지 전극 형성용 조성물로 제조된 태양전지 전극.10. A solar cell electrode prepared from the composition for forming a solar cell electrode of claim 1.
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WO2011046365A2 (en) * 2009-10-13 2011-04-21 주식회사 엘지화학 Silver paste composition and solar cell using same
KR20120084045A (en) * 2011-01-19 2012-07-27 한국화학연구원 Method for solar cell metallization using conductive ink with nano sized glass frit
KR20130018344A (en) * 2013-01-04 2013-02-20 제일모직주식회사 Paste for forming electrode of solar cell, method for preparing the same and solar cell using the same

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