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WO2015008439A1 - Détecteur de rotation - Google Patents

Détecteur de rotation Download PDF

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Publication number
WO2015008439A1
WO2015008439A1 PCT/JP2014/003436 JP2014003436W WO2015008439A1 WO 2015008439 A1 WO2015008439 A1 WO 2015008439A1 JP 2014003436 W JP2014003436 W JP 2014003436W WO 2015008439 A1 WO2015008439 A1 WO 2015008439A1
Authority
WO
WIPO (PCT)
Prior art keywords
magnetoresistive effect
effect elements
pair
rotation
rotating body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2014/003436
Other languages
English (en)
Japanese (ja)
Inventor
孝昌 金原
紀博 車戸
泰行 奥田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Priority to DE112014003316.2T priority Critical patent/DE112014003316B4/de
Publication of WO2015008439A1 publication Critical patent/WO2015008439A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
    • G01D5/244—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing characteristics of pulses or pulse trains; generating pulses or pulse trains
    • G01D5/245—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing characteristics of pulses or pulse trains; generating pulses or pulse trains using a variable number of pulses in a train
    • G01D5/2451—Incremental encoders
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
    • G01D5/244—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing characteristics of pulses or pulse trains; generating pulses or pulse trains
    • G01D5/24428—Error prevention
    • G01D5/24433—Error prevention by mechanical means
    • G01D5/24438—Special design of the sensing element or scale

Definitions

  • the present disclosure relates to a rotation sensor that detects a rotation state of a rotating body based on a change in magnetic flux whose direction periodically changes as the rotating body rotates.
  • Patent Document 1 a magnetic member in which N poles and S poles are alternately arranged, and one or more pairs of vector detection type magnetoresistive effect elements facing the magnetic pole arrangement surface of the magnetic member, Have been proposed.
  • One or a plurality of pairs of vector detection type magnetoresistive elements are arranged in a line substantially perpendicular to the magnetic pole arrangement direction of the magnetic member. Thereby, the phase of the magnetic flux which permeate
  • each vector detection type magnetoresistive effect element since the facing distance between each vector detection type magnetoresistive effect element and the magnetic member is different, the intensity of the magnetic flux passing through each vector detection type magnetoresistive effect element is different. Therefore, it may be difficult to detect the rotation state of the magnetic member (rotating body) with high accuracy based on an electric signal that depends on the resistance value of each vector detection type magnetoresistive element.
  • This disclosure is intended to provide a rotation sensor with improved detection accuracy of the rotation state of a rotating body.
  • a rotation sensor is a rotation sensor that detects a rotation state of a rotating body based on a change in magnetic flux whose direction periodically changes with the rotation of the rotating body.
  • Each of the plurality of magnetoelectric conversion units includes a pair of magnetoresistive elements.
  • Each of the pair of magnetoresistive effect elements includes a pinned layer having a fixed magnetization direction, a free layer whose magnetization direction varies according to an external magnetic field, and a non-layer provided between the pinned layer and the free layer.
  • a magnetic intermediate layer, and the resistance value varies depending on the magnetization directions of the pinned layer and the free layer.
  • the magnetization directions of the pinned layers of the magnetoresistive elements forming a pair are different from each other by 180 °.
  • the magnetoresistive effect elements forming a pair included in each of the plurality of magnetoelectric conversion units are arranged side by side along the rotation direction of the rotating body, and extend from the rotation axis of the rotating body so as to be orthogonal to the rotation direction. They are arranged symmetrically with lines.
  • a bridge circuit is formed by each of the magnetoresistive effect elements forming a pair, and a midpoint potential of the bridge circuit is set as a signal based on the rotation state of the rotating body.
  • the rotation sensor can improve the detection accuracy of the rotating state of the rotating body by utilizing the midpoint potential of the bridge circuit as a signal based on the rotating state of the rotating body.
  • FIG. 1 is a perspective view schematically showing positions of a rotation sensor and a rotating body according to the first embodiment.
  • FIG. 2 is a top view schematically showing positions of the rotation sensor and the rotating body.
  • FIG. 3 is a schematic diagram showing the magnetization direction of the pinned layer.
  • FIG. 4 is a circuit diagram showing a bridge circuit assembled by magnetoresistive elements.
  • FIG. 5 is a timing chart showing the midpoint potential and the pulse signal.
  • FIG. 6 is a schematic diagram showing a reference magnetic flux passing through an intersection.
  • FIG. 7 is a graph showing fluctuations in resistance values of the magnetoresistive effect element and the midpoint.
  • FIG. 8 is a top view illustrating a modification of the magnetoelectric conversion unit.
  • FIG. 9 is a top view illustrating a modification of the magnetoelectric conversion unit.
  • FIG. 10 is a top view illustrating a modification of the magnetoelectric conversion unit.
  • FIG. 11 is a circuit diagram showing the first full bridge circuit.
  • FIG. 12 is a circuit diagram showing a second full bridge circuit.
  • a rotation sensor according to this embodiment will be described with reference to FIGS.
  • a plane at the same height position where the rotator 200 and the rotation sensor 100 are arranged is defined as a specified plane, and a direction perpendicular to the specified plane and passing through the rotation center RC of the rotator 200 is indicated as an axial direction.
  • a direction around the axial direction is indicated as a rotation direction, and a direction extending from the rotation center RC along the prescribed plane is indicated as a radial direction.
  • the rotation axis is along the axial direction.
  • the rotation sensor 100 detects the rotation state of the rotating body 200 based on a change in magnetic flux whose direction periodically changes as the rotating body 200 rotates.
  • the rotating body 200 has an annular shape, and an N pole 210 and an S pole 220 are formed on the outer ring surface at equal intervals along the rotation direction. As shown in FIGS. 1 and 2, the N pole 210 and the S pole 220 are alternately formed, and a magnetic flux flows from the N pole 210 to the S pole 220. The magnetic flux between the adjacent N pole 210 and S pole 220 flows so as to draw a semicircular locus.
  • the rotation sensor 100 detects a periodic change due to the rotation of the magnetic flux that draws this semicircular locus.
  • the rotation sensor 100 includes a first magnetoelectric conversion unit 10 and a second magnetoelectric conversion unit 20 that convert changes in the direction of magnetic flux into electrical signals.
  • the 1st magnetoelectric conversion part 10 has the magnetoresistive effect elements 11 and 12 which make a pair
  • the 2nd magnetoelectric conversion part 20 has the magnetoresistive effect elements 21 and 22 which make a pair.
  • the magnetoresistive effect elements 11 and 12 forming a pair and the magnetoresistive effect elements 21 and 22 forming a pair are arranged side by side along the rotation direction as shown in FIGS. Are symmetrically arranged on a reference line BL extending in the radial direction from the center.
  • the magnetoresistive elements 11 and 12 forming a pair are rotated in the rotational direction (strictly speaking, the rotation of the rotating body 200 at the intersection CP in the rotational direction where the reference line BL and the magnetoresistive elements 11 and 12 are arranged).
  • the magnetoresistive elements 21 and 22 forming a pair are arranged in the rotational direction (strictly, the tangential direction) via the magnetoresistive elements 11 and 12.
  • the parallel direction corresponds to the tangential direction described above.
  • the lateral widths of the magnetoresistive elements 11, 12, 21, and 22 in the rotational direction are the same. Therefore, if the lateral width of the magnetoresistive effect elements 11, 12, 21, and 22 is L, the center of each of the magnetoresistive effect elements 11 and 12 is L / 2 in the rotational direction (tangential direction) from the reference line BL (intersection CP). It is separated. The centers of the magnetoresistive elements 21 and 22 are separated from the reference line BL (intersection CP) by 3L / 2 in the rotational direction (tangential direction). Thus, each of the magnetoresistive effect elements 11, 12, 21, and 22 is separated from the reference line BL (intersection CP) by the width. Therefore, there is a phase difference between the magnetic flux that passes through the centers of the magnetoresistive elements 11, 12, 21, and 22 and the magnetic flux that passes through the intersection CP.
  • the magnetoresistive elements 11 and 21 are located on the left side of the drawing with respect to the reference line BL, and the magnetoresistive elements 12 and 22 are located on the right side of the drawing with respect to the reference line BL. Therefore, when the rotating body 200 rotates counterclockwise, the magnetoresistive effect elements 11 and 21 are positioned upstream of the reference line BL, and the magnetoresistive effect elements 12 and 22 are positioned downstream of the reference line BL. It becomes.
  • the magnetic flux that passes through the magnetoresistive effect element 21 has a phase that is 3L / 2 faster than the reference magnetic flux that passes through the reference line BL, and the magnetic flux that passes through the magnetoresistive effect element 11 has a phase that is L / 2 faster than the reference magnetic flux.
  • the magnetic flux passing through the magnetoresistive effect element 12 is delayed in phase by L / 2 than the reference magnetic flux, and the magnetic flux passing through the magnetoresistive effect element 22 is delayed in phase by 3 L / 2 from the reference magnetic flux. .
  • the magnetoresistive effect elements 12 and 22 are located upstream from the reference line BL, and the magnetoresistive effect elements 11 and 21 are located downstream from the reference line BL. Will be located. Therefore, the magnetic flux that passes through the magnetoresistive effect element 22 has a phase that is 3L / 2 faster than the reference magnetic flux, and the magnetic flux that passes through the magnetoresistive effect element 12 has a phase that is L / 2 faster than the reference magnetic flux.
  • the magnetic flux passing through the magnetoresistive effect element 11 is delayed in phase by L / 2 from the reference magnetic flux, and the magnetic flux passing through the magnetoresistive effect element 21 is delayed in phase by 3 L / 2 from the reference magnetic flux.
  • the rotating body 200 rotates counterclockwise will be described. When the rotating body 200 rotates clockwise, the above-described relationship is established, and thus the description thereof is omitted.
  • each of the magnetoresistive effect elements 11, 12, 21, and 22 includes a pinned layer having a fixed magnetization direction, a free layer whose magnetization direction varies according to an external magnetic field, and a pinned layer and a free layer. And a nonmagnetic intermediate layer provided on the substrate.
  • the resistance value fluctuates depending on the magnetization direction of each of the pinned layer and the free layer.
  • the resistance value fluctuates the lowest when the magnetization directions of the free layer and the pinned layer are parallel, and the resistance value varies most when the magnetization directions are antiparallel. Highly fluctuating.
  • the intermediate layer has conductivity
  • each of the magnetoresistive elements 11, 12, 21, and 22 is a giant magnetoresistive element.
  • the magnetization directions of the pinned layers of each of the magnetoresistive effect elements 11, 12, 21, and 22 are along the prescribed plane, and the magnetization directions of the pinned layers of each of the magnetoresistive effect elements 11 and 12 forming a pair are in the radial direction.
  • the magnetization direction of the pinned layer of each of the magnetoresistive effect elements 21 and 22 that form a pair is along the rotational direction (strictly, the tangential direction thereof). Therefore, the magnetization direction of the pinned layer included in each of the magnetoresistive effect elements 11 and 12 forming a pair is different from the magnetization direction of the pinned layer included in each of the magnetoresistive effect elements 21 and 22 forming a pair by 90 ° (270 °). Yes.
  • the magnetization directions of the pin layers of the magnetoresistive elements 11 and 12 forming a pair are different from each other by 180 °, and the magnetization directions of the pin layers of the magnetoresistive elements 21 and 22 forming a pair are different from each other by 180 °. Yes.
  • the magnetoresistive effect element 11 has a magnetization direction of the pinned layer of 0 °
  • the magnetoresistive effect element 12 is The magnetization direction of the pinned layer is 180 °.
  • the magnetoresistive element 21 has a pinned layer with a magnetization direction of 90 °
  • the magnetoresistive element 22 has a pinned layer with a magnetization direction of 270 °.
  • the magnetization directions of the magnetoresistive effect elements 11 and 12 forming a pair are antiparallel to each other, and the magnetization directions of the magnetoresistive effect elements 21 and 22 forming a pair are antiparallel to each other. For this reason, when the resistance values of the two magnetoresistive elements are opposite to each other and one of the two magnetoelectric transducers has a small resistance value, the other resistance value is large.
  • a bridge circuit is formed by the magnetoresistive effect elements 11 and 12 and the magnetoresistive effect elements 21 and 22 that form a pair, and the midpoint potential is changed to the rotational state of the rotating body 200. As a signal based on this, it is input to a processing circuit (not shown) located in the subsequent stage.
  • the first half-bridge circuit is assembled by the magnetoresistive effect elements 11 and 12 that form a pair of the first magnetoelectric conversion unit 10, and the magnetoresistive effect element 21 that forms a pair of the second magnetoelectric conversion unit 20. , 22 form a second half bridge circuit.
  • the magnetization direction of the pinned layer included in each of the paired magnetoresistive effect elements 11 and 12 and the magnetization direction of the pinned layer included in each of the paired magnetoresistive effect elements 21 and 22 are 90 ° (270 °). ) Is different. Therefore, the phase difference between the midpoint potential of the first half bridge circuit (hereinafter referred to as the first midpoint potential) and the midpoint potential of the second half bridge circuit (hereinafter referred to as the second midpoint potential) is 90 °. (270 °). Therefore, if the first midpoint potential is a sine wave, the second midpoint potential is a cosine wave.
  • the processing circuit described above has a threshold value (broken line shown in FIG. 5). By comparing this threshold value with the midpoint potential, the first midpoint potential is set as the first pulse signal, and the second midpoint potential is set as the second potential. Convert to 2-pulse signal.
  • the magnetoresistive effect elements 11, 12, 21, and 22 are arranged side by side along the rotation direction (the tangential direction of the intersection CP). According to this, unlike the configuration in which a plurality of magnetoresistive elements are arranged in the radial direction perpendicular to the rotational direction instead of the rotational direction, the strength of the magnetic flux transmitted through each magnetoresistive element is the same. It becomes. However, in the case of this configuration, as described above, due to its own lateral width, there is a phase difference between the magnetic flux passing through the magnetoresistive effect elements 11, 12, 21, and 22 and the reference magnetic flux passing through the intersection CP.
  • the angle around the intersection CP from the reference line BL in the reference magnetic flux is a.
  • the resistance value of the magnetoresistive effect element 11 constituting the first half bridge circuit (hereinafter referred to as the first resistance value) is as shown by a broken line in FIG.
  • the behavior of a sine wave depending on the angle a is shown.
  • the first resistance value exhibits a behavior in which the phase is deviated from the sine wave as shown by the solid line in FIG.
  • the center of the magnetoresistive effect element 12 is at the intersection CP, as indicated by a broken line in FIG.
  • the resistance value of the magnetoresistive effect element 12 constituting the first half bridge circuit (hereinafter referred to as the second resistance value). Indicates a behavior of a cosine wave depending on the angle a. However, since the center of the magnetoresistive effect element 12 is deviated from the intersection CP, the second resistance value exhibits a behavior in which the phase is deviated from the cosine wave as shown by the solid line in FIG.
  • each of the first resistance value and the second resistance value behaves with a phase shift from the angle a.
  • the first half bridge circuit is assembled by the magnetoresistive effect elements 11 and 12 forming a pair
  • the second half bridge circuit is assembled by the magnetoresistive effect elements 21 and 22 forming the pair
  • the midpoint potential is rotated.
  • the signal is based on the rotation state of the body 200. According to this, the phase shift can be eliminated for the following reason.
  • the reference magnetic flux angle is a.
  • An angle deviation from the reference magnetic flux in the direction of the magnetic flux passing through the centers of the paired magnetoresistive elements 11 and 12 is defined as b.
  • the center value of the resistance value of each of the magnetoresistive effect elements forming the pair is Rc
  • the amplitude of the resistance change amount of each of the magnetoresistive effect elements 11 and 12 forming the pair is R0
  • the voltage supplied to the first half bridge circuit is V
  • the first midpoint potential is expressed as (R0 ⁇ sin (ab) + Rc) V / (R0 ⁇ sin (ab) + Rc + R0 ⁇ sin (a + b + 180 °) + Rc).
  • the midpoint potential of the first half-bridge circuit is ( ⁇ V / 2) (sin (a) ⁇ cos (b) / (cos (a) ⁇ sin (b) ⁇ Rc) ⁇ 1).
  • the first midpoint resistance depends only on a in terms of time, and FIG. 7 shows the behavior indicated by the alternate long and short dash line. That is, it shows behavior similar to a sine wave without phase shift.
  • the first midpoint potential is a value at which the phase shift is eliminated. Therefore, by using the first midpoint potential as a signal based on the rotation state of the rotator 200, the detection accuracy of the rotation state of the rotator 200 is improved.
  • the same argument can be applied to the magnetoresistive elements 21 and 22 forming a pair.
  • the same argument can be advanced by setting the angle deviation from the reference magnetic flux in the direction of the magnetic flux passing through the centers of the paired magnetoresistive effect elements 21 and 22 to c.
  • the resistance at the midpoint (hereinafter referred to as the second midpoint resistance) is a value with no phase shift. Therefore, by using the second midpoint potential as a signal based on the rotation state of the rotator 200, the detection accuracy of the rotation state of the rotator 200 is improved.
  • the magnetoresistive effect elements 11 and 12 forming a pair are arranged in the rotational direction (tangential direction) without any intervening therebetween, and the magnetoresistive effect elements 21 and 22 forming the pair are magnetoresistive effect elements 11 and 12.
  • the magnetoresistive elements 21 and 22 forming a pair are arranged in the rotational direction (tangential direction) without any intervening elements, and the magnetoresistive elements 11 and 12 forming a pair are magnetoresistive elements. It is also possible to adopt a configuration in which the rotation direction (tangential direction) is arranged via 21 and 22.
  • the first magnetoelectric conversion unit 10 includes a pair of magnetoresistive effect elements 11 and 12
  • the second magnetoelectric conversion unit 20 includes a pair of magnetoresistive effect elements 21 and 22.
  • An example is shown.
  • the number of pairs of magnetoresistive effect elements forming a pair included in each of the magnetoelectric conversion units 10 and 20 is not limited to the above example, and a plurality of pairs may be used.
  • the first magnetoelectric conversion unit 10 includes magnetoresistive effect elements 11 to 14 that form two pairs
  • the second magnetoelectric conversion unit 20 forms a magnetoresistance that forms two pairs.
  • a configuration having effect elements 21 to 24 can also be adopted. In this case, as shown in FIGS.
  • two first half-bridge circuits are formed by the two pairs of magnetoresistive effect elements 11 to 14, and thereby the first full-bridge circuit is formed.
  • two second half-bridge circuits are formed by the magnetoresistive effect elements 21 to 24 forming two pairs, and the second full-bridge circuit is formed by these.
  • the lateral widths of the magnetoresistive elements 11, 12, 21, and 22 in the rotational direction are the same.
  • the lateral widths in the rotational direction (tangential direction) of the magnetoresistive elements forming a pair are equal and the distances from the reference line BL (intersection CP) of the magnetoresistive elements forming the pair may be equal. Therefore, the lateral widths of all the magnetoresistive elements need not be equal.
  • the intermediate layer has conductivity, and each of the magnetoresistive elements 11, 12, 21, and 22 is a giant magnetoresistive element.
  • each of the magnetoresistive effect elements 11, 12, 21, and 22 is a tunnel magnetoresistive effect element.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Transmission And Conversion Of Sensor Element Output (AREA)
  • Measuring Magnetic Variables (AREA)

Abstract

L'invention concerne un détecteur de rotation comprenant une pluralité d'unités (10, 20) de conversion magnéto-électrique, et chacune des unités de conversion magnéto-électrique comprenant des éléments appariés (11-14, 21-24) à effet de magnétorésistance. Les directions de magnétisation des couches d'ancrage fournies au niveau de chacun des éléments appariés à effet de magnétorésistance sont différentes les unes des autres de 180°. Les éléments appariés à effet de magnétorésistance fournis au niveau de chacune des unités de conversion magnéto-électrique sont disposés côte à côte le long de la direction de rotation d'un corps tournant et sont disposés de sorte à être symétriques par rapport à une ligne de référence s'étendant à partir de l'axe de rotation du corps tournant de sorte à être perpendiculaires à la direction de rotation. Les éléments appariés à effet de magnétorésistance forment des circuits en pont, et les potentiels au point médian des circuits en pont sont amenés à être des signaux qui sont fonction de l'état de rotation du corps tournant.
PCT/JP2014/003436 2013-07-17 2014-06-27 Détecteur de rotation Ceased WO2015008439A1 (fr)

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Application Number Priority Date Filing Date Title
DE112014003316.2T DE112014003316B4 (de) 2013-07-17 2014-06-27 Rotationssensor

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JP2013148785A JP6064816B2 (ja) 2013-07-17 2013-07-17 回転センサ
JP2013-148785 2013-07-17

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DE (1) DE112014003316B4 (fr)
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WO2018230243A1 (fr) * 2017-06-16 2018-12-20 株式会社デンソー Capteur de position
CN110741230A (zh) * 2017-06-16 2020-01-31 株式会社电装 位置传感器
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US11733063B2 (en) 2017-06-16 2023-08-22 Denso Corporation Position sensor

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JP2015021795A (ja) 2015-02-02
JP6064816B2 (ja) 2017-01-25
DE112014003316T5 (de) 2016-03-31
DE112014003316B4 (de) 2019-07-11

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