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WO2015087252A1 - Ressort hélicoïdal destiné à un mouvement d'horlogerie mécanique - Google Patents

Ressort hélicoïdal destiné à un mouvement d'horlogerie mécanique Download PDF

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Publication number
WO2015087252A1
WO2015087252A1 PCT/IB2014/066756 IB2014066756W WO2015087252A1 WO 2015087252 A1 WO2015087252 A1 WO 2015087252A1 IB 2014066756 W IB2014066756 W IB 2014066756W WO 2015087252 A1 WO2015087252 A1 WO 2015087252A1
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WIPO (PCT)
Prior art keywords
silicon
layer
spiral spring
crystals
coil spring
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PCT/IB2014/066756
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German (de)
English (en)
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WO2015087252A4 (fr
Inventor
Konrad Damasko
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Damasko GmbH
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Damasko GmbH
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Publication of WO2015087252A4 publication Critical patent/WO2015087252A4/fr
Anticipated expiration legal-status Critical
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Classifications

    • G—PHYSICS
    • G04—HOROLOGY
    • G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
    • G04B17/00—Mechanisms for stabilising frequency
    • G04B17/04—Oscillators acting by spring tension
    • G04B17/06—Oscillators with hairsprings, e.g. balance

Definitions

  • the invention relates to a coil spring for mechanical movements.
  • a mechanical movement has as its central components a barrel with tension spring, gear train, escapement and oscillating system (balance).
  • the barrel with tension spring provides the drive of the movement.
  • the power is transmitted starting from the barrel via the gear train to the escape wheel, which represents a part of the escapement.
  • the gear train drives the hands of the watch and translates the spring force stored in the tension spring into rotational motions of different speeds, indicating seconds, minutes, hours and so on.
  • the balance comprises a vibrating body, which is mounted pivotably about an axis of rotation by means of a balance shaft. Furthermore, a spiral spring is provided which, together with the mass of the oscillating body, forms the oscillatory and clocking system. Finally, the balance includes a device for regulating the speed, such as a back, with which the rocker characteristic of the coil spring changed and thus the desired correct gear of the clock can be adjusted.
  • the exact course of the clock is based on the most even swinging back and forth of the coil spring to their equilibrium position.
  • the armature intervenes alternately inhibiting and releasing in the escape wheel so that the movement always pulsates in the same time. However, without a steady supply of energy, the balance would stop moving.
  • the force coming from the barrel is continuously transmitted to the balance via the gear train.
  • the escapement forwards the power via the escape wheel and the anchor to the balance wheel.
  • the oscillating body of the balance causes biasing of the coil spring, creating a return torque that causes the coil spring, after release by the armature, to return to its equilibrium position.
  • the oscillating body is given a certain amount of kinetic energy, which is why it oscillates beyond its equilibrium position until the counter-torque of the spiral spring stops it and forces it to swing back.
  • the spiral spring thus regulates the oscillation period of the balance and thus the course of the clock.
  • a mechanical watch consists of a large number of smallest functional elements that must be precisely matched to each other and achieved with high accuracy in order to achieve high accuracy of the watch.
  • Various methods for the production of functional elements, in particular also coil springs, for mechanical watches are known from the prior art.
  • silicon oxide or silicon dioxide is used as synonymous terms.
  • Si wafers are used for the production of the functional elements or coil springs for mechanical watches. These Si wafers consist essentially of isotropic silicon particles, which can be produced in various ways. As a by-product of the production of silicon granules by means of fluidized bed process, the desired silicon particles with a diameter of 0.01 .mu.m to 10 .mu.m. In addition to the coarse-grained granules, these processes also produce very fine silicon powder whose particle sizes are in the desired range.
  • Silicon powder with particle sizes in the micrometer and sub-micron range can also be produced from silane gas by high-temperature pyrolysis, by the Siemens process, by hydrogen reduction processes using tetrachlorosilanes or by other chemical vapor deposition processes. From the silicon powder, a nanoparticle specimen is produced by means of a sintering process.
  • international patent application WO 2010/097228 discloses spark plasma sintering.
  • the German publication DE 1 1 2009 000 068 T5 of the international patent application WO 2009/155849 discloses the use of silicon powder with a grain diameter of 0, 1 pm to 1000 pm in cold isostatic or hot isostatic sintering process.
  • EP 10 2008 061 182 A1 discloses the production of spiral springs by laser cutting from the wear layer of a silicon wafer.
  • EP 1 422 436 A1 discloses a method for producing spiral springs for the oscillatory system of mechanical clocks made of monocrystalline silicon.
  • EP 1 422 436 A1 discloses a method for producing spiral springs for the oscillatory system of mechanical clocks made of monocrystalline silicon.
  • DE 101 27 733 A1 discloses a method for producing helical or spiral springs made of crystalline, in particular monocrystalline silicon by a mechanical erosion machining.
  • DE 10 2008 029 429 A1 discloses a method for producing spiral springs for watch movements, in which the spiral springs are exposed by etching processes with the aid of etching masks made of a silicon starting material (Si wafers).
  • EP 2 201 428 A1 discloses a spiral spring which is produced by cutting or etching from a plate-shaped substrate obtained by epitaxial deposition of polycrystalline silicon.
  • the epitaxial deposition of the polycrystalline silicon is carried out using a CVD method.
  • the spiral springs obtained in this way have an excellent vibration behavior and thus cause a high accuracy of the movement.
  • the manufacture of the coil springs frequently causes fractures and cracks in the springs, which results in a high scrap of material.
  • the production of coil springs with excellent vibration behavior and at the same time the lowest possible material losses due to rejects is a central goal in the field of mechanical movements.
  • the thickness of the silicon oxide or silicon dioxide coating required for a given functional element in order to achieve optimum temperature compensation can easily be calculated by a person skilled in the art or simply determined experimentally.
  • the calculated or determined layer thicknesses for the silicon oxide coating are available in tabular form. Customary coatings with thicknesses of 1 to 8 pm, more preferably 2 to 5 pm.
  • the processes known from the prior art for applying a silicon oxide coating are all very time-consuming. Performing a thermal oxidation with oxygen to produce a conventional layer thickness of 3 to 8 pm at temperatures of about 1000 ° C usually takes 40 to 80 hours. It is therefore desirable that functional elements of a mechanical timepiece can be made such that they ideally show no temperature dependence in their movement behavior. In the event that the thermal oxidation of the spiral spring made of silicon is carried out by a CVD method, this takes place at temperatures and 1000 ° C.
  • invention 19 may be prepared by the methods known to those skilled in the art such as, for example, directed growth, for example epitaxy, crystallization or recrystallization or crystal growing.
  • directed growth for example epitaxy, crystallization or recrystallization or crystal growing.
  • the crystals are simplified in some figures drawn as a rectangle or four, can be isotropic as well as anisotropic.
  • Other methods for producing the crystals is spark plasma sintering or laser crystallization.
  • the modulus distribution has a direct effect on the flexural rigidity. At a bend of the spiral spring that spiral portion with a lower modulus of elasticity bends more strongly than one with a higher modulus of elasticity. If such an E-modulus difference within a turn of a coil spring, it tends to twisting.
  • the object of the invention is to provide a coil spring for mechanical movements with excellent vibration behavior. This object is achieved by a coil spring according to claim 1. Further advantageous aspects, details and embodiments of the invention will become apparent from the dependent claims, the description and the figures.
  • a spiral spring is known to include windings, wherein a cross section of a winding has a height and a width. At least one layer of silicon oxide is applied to a boundary region of the spiral spring.
  • the cross section of the spiral spring comprises along its height at least two superposed regions of a silicon material.
  • the respective silicon material comprises a plurality of regions of amorphous and / or polycrystalline and / or monocrystalline silicon.
  • Each region has formed at least two anchors by growing silicon oxide into the boundary region of the core of the coil spring.
  • Each anchor has an individual roughness. The individual roughnesses of the anchors should ideally be the same, but naturally differ by the different growth behavior of the individual crystals of silicon oxide or silicon dioxide.
  • the spiral spring according to the invention for a mechanical movement is now characterized in that after the thermal oxidation by means of oxygen or a thermal CVD method for applying a Si0 2 - layer of the exposed Sprialfedern in each area at least one anchor, the same roughness as a has another anchor of an adjacent area.
  • the greater the number of such anchors over adjacent regions having the same roughness the easier the topology or roughness profile becomes over the entire height of the coil spring and the greater the likelihood of a comparatively low average roughness over all anchors of all regions of the coil spring ,
  • Such a spiral spring is correspondingly smooth and ensures an improved vibration behavior of the mechanical movement.
  • the roughness also known as the roughness depth, denotes the unevenness of the surface height of the anchors.
  • the surface roughness can be influenced, inter alia, by the abovementioned production methods for the spiral spring, in which the surface of the spiral spring is polished, ground, lapped, honed, etched, vapor-deposited and / or oxidized or corroded.
  • the term roughness can furthermore designate a shape deviation of the third to fifth order in the case of technical surfaces in accordance with DIN 4760.
  • the roughness of the surfaces of the coil springs should be as small as possible.
  • the roughness can be measured and determined with different measuring devices: by means of manual methods, for example by the Rugotest; using profile-based methods, such as stylus methods; and by means of area-based methods, for example by optically planar methods.
  • a width variation of an oxide layer on the spiral spring amounts to a maximum of 15%, preferably 10% and more preferably maximum. 5% / the total width of the oxide layer.
  • the above-described spiral spring according to the invention also overcomes a further disadvantage that, due to an inhomogeneous distribution of the roughness peaks, ie the tips of the armatures, inhomogeneous width fluctuations of the oxide layer along the height of the spiral spring arise along the height of the spiral spring. This adversely affects the vibration behavior.
  • the average roughness over the armatures of the regions assumes a maximum value from the interval 0.5 pm to 10.0 pm.
  • the average roughness is preferably in the interval from 0.1 ⁇ m to 5.0 ⁇ m and more preferably in the interval from 0.3 ⁇ m to 3.0 ⁇ m.
  • the average roughness over the anchors of the ranges in the interval from 0.001 pm to 2.0 pm.
  • the distribution of the individual roughnesses of the anchors of the areas should be minimal.
  • the frequency with respect to the number of anchors of each area should be maximum.
  • the cross section of the helical spring is constructed in such a way that the Si crystals are distributed essentially homogeneously with respect to their size and orientation over the cross section of the helical spring.
  • One possible method for producing at least one functional element for mechanical movements comprises the following steps:
  • the at least one functional element Separating the at least one functional element by removing the material of the solid body surrounding the respective functional element.
  • the solid can be prepared by sublimation, CVD, LPCVD, epitaxial deposition, etc.
  • the functional element is a spiral spring.
  • a homogeneous distribution of the silicon particles or Si crystals, preferably of amorphous and / or monocrystalline silicon particles or silicon crystals, over the cross section of the spiral spring is achieved for example by annealing.
  • a temperature T greater than or equal to 800 ° C. and a time duration t of tempering greater than or equal to 10 hours have proven to be advantageous.
  • a distribution of the Si crystals, which is much more homogeneous than that of FIG. 18, over the cross section of the spiral spring is obtained.
  • surfaces F1, F2, F3 have the same bending strength when a force F is exerted, thus ensuring substantially the same bending strength over the entire turn of the coil spring. This results in a homogeneous swing and torsion of the coil spring is avoided.
  • a spiral spring for mechanical movements with a coincident with the vibration plane of the spiral spring coil spring plane E and a perpendicular to the spiral spring plane E, extending through the center of the spiral spring coil spring axis A available.
  • the spiral spring is constructed in a direction parallel to the coil spring axis A of at least five layers, namely a first, outer layer of silicon oxide, at least a second layer of polycrystalline silicon and at least a fourth layer of polycrystalline silicon, wherein the second layer and the fourth layer consist of anisotropic silicon crystals, wherein the anisotropic silicon crystals have a diameter parallel to the spiral spring plane E of 10 nm to 1000 nm and a height parallel to the coil spring axis A from 2 pm to 50 pm, a third, between the second layer of polycrystalline silicon and the fourth layer of polycrystalline silicon arranged layer of polycrystalline silicon, wherein the third layer of substantially isotropic silicon crystals having a diameter of 10 nm to 1000 nm, and a fifth outer layer of silicon oxide.
  • the diameter of the anisotropic silicon crystals is 10nm to 30000nm and their height 500nm to 50pm.
  • the diameter of the isotropic silicon crystals is 1 nm to 10000 nm.
  • the spiral spring has an intermediate layer of substantially isotropic silicon crystals, which is arranged between two layers of anisotropic silicon crystals.
  • the construction of the spiral spring according to the invention of at least five layers is completed by two outer layers of silicon oxide, by which the sensitivity of the coil spring is reduced to temperature fluctuations.
  • the present invention encompasses any type of spiral spring for mechanical movements in which at least two layers of anisotropic silicon crystals separated from one another by a layer of substantially isotropic silicon crystals are arranged between two outer layers of silicon oxide.
  • the spiral spring In order to achieve a constant oscillation behavior of the coil spring and thus a high and as constant as possible accuracy of the movement, namely the remindholkonstante the spiral spring must be as constant as possible.
  • the fact is utilized that silicon oxide has a temperature coefficient of the modulus of elasticity opposite to the silicon.
  • the thickness of the silicon oxide coating required for a given cross-section of the coil spring to achieve optimum temperature compensation can be readily calculated by one skilled in the art or simply determined experimentally.
  • the calculated or determined layer thicknesses for the silicon oxide coating are available in tabular form. Common are coatings with thicknesses of 2 to 8 pm.
  • the coil spring is constructed in a direction parallel to the spiral spring axis A of at least five layers, namely a first layer of silicon oxide, a second layer of polycrystalline silicon disposed on the first layer of silicon oxide, wherein the second layer consists of anisotropic silicon crystals, wherein the anisotropic silicon crystals have a diameter parallel to the spiral spring plane E of 10 nm to 3000 nm, preferably 10 nm to 1000 nm, and a height parallel to the coil spring axis A of 2 pm to 500nm, preferably 2 pm to 50 pm, a third polycrystalline silicon layer disposed on the second polycrystalline silicon layer, the third layer consisting of substantially isotropic silicon crystals having a diameter of 1 nm to 1000 nm, preferably 10 nm to 1000 nm, one on the third layer Polycrystalline silicon arranged fourth layer of polycrystalline silicon, wherein the fourth layer consists of anisotropic silicon crystals, the anisotropic silicon crystals having a diameter parallel to the spiral spring plane E
  • the two outer layers of silicon oxide are formed with complete dissolution of the outer layers of substantially isotropic silicon crystals present before the oxidation.
  • the finished Spiral spring then stand the two outer layers of silicon oxide in direct contact with each one layer of anisotropic silicon crystals.
  • a helical spring which is constructed in a direction parallel to the spiral spring axis A of at least six layers, namely a first, outer layer of silicon oxide, a sixth, arranged on the first layer of silicon oxide layer of polycrystalline silicon, wherein the sixth layer consists of substantially isotropic silicon crystals with a diameter of 10 nm to 1000 nm, arranged on the sixth layer of polycrystalline silicon second layer of polycrystalline silicon, wherein the second layer consists of anisotropic silicon crystals, wherein the anisotropic silicon crystals a diameter parallel to the spiral spring plane E of 10 nm to 1000 nm and a height parallel to the coil spring axis A from 2 pm to 50 pm have a third, arranged on the second layer of polycrystalline silicon layer of polycrystalline silicon, wherein the third layer of We - essential isotropic Silicon crystals having a diameter of 10 nm to 1000 nm, a fourth layer of polycrystalline silicon disposed on the third layer of polycrystalline silicon, wherein the fourth layer consists of anis
  • only one of the two outer layers of silicon oxide with complete dissolution of the present before the oxidation outer layer of substantially isotropic silicon crystals is formed in the method described below in more detail for the preparation of the coil spring.
  • the further outer layers of silicon oxide in the course of the oxidation no complete dissolution of the outer layer of essentially isotropic silicon crystals present before the oxidation takes place.
  • one of the two outer layers of silicon oxide is in direct contact Contact with a layer of anisotropic silicon crystals and the other outer layer of silicon oxide is in direct contact with a layer of substantially isotropic silicon crystals, which then again followed by a layer of anisotropic silicon crystals.
  • the spiral spring is constructed in a direction parallel to the coil spring axis A of at least seven layers, namely a first, outer layer of silicon oxide, a sixth, arranged on the first layer of silicon oxide layer of polycrystalline silicon, wherein the sixth layer consists of substantially isotropic silicon crystals with a diameter of 10 nm to 1000 nm, arranged on the sixth layer of polycrystalline silicon second layer of polycrystalline silicon, wherein the second layer consists of anisotropic silicon crystals, wherein the anisotropic silicon crystals a diameter parallel to the spiral spring plane E of 10 nm to 1000 nm and a height parallel to the coil spring axis A from 2 pm to 50 pm, a third, arranged on the second layer of polycrystalline silicon layer of polycrystalline silicon, wherein the third layer of the Substantially isotropic silicon crystals having a diameter of 10 nm to 1000 nm, a arranged on the third layer of polycrystalline silicon fourth layer of polycrystalline silicon, wherein the fourth layer consists
  • the two outer layers of silicon oxide are only partially dissolved by the outer layer present before the oxidation Layers of essentially isotropic silicon crystals are formed.
  • Layers of essentially isotropic silicon crystals are formed.
  • both outer layers of silicon oxide are then in direct contact with a layer of essentially isotropic silicon crystals, which are then each followed by a layer of anisotropic silicon crystals.
  • the spiral spring preferably has at least one further layer consisting essentially of isotropic silicon crystals in one direction parallel to the spiral spring axis A and at least one further layer consisting of anisotropic silicon crystals, wherein the further layer consisting essentially of isotropic silicon crystals is arranged between two layers consisting of anisotropic silicon crystals and the further layer consisting of anisotropic silicon crystals is arranged between two layers consisting of essentially isotropic silicon crystals.
  • the second intermediate layer of essentially isotropic silicon crystals provided according to this embodiment further reduces the stresses in the silicon substrate and reduces damage during the production process.
  • the spiral spring in a direction parallel to the spiral spring axis
  • the first and / or the fifth layer of silicon oxide has a thickness parallel to the spiral spring axis A of 2 pm to 8 pm.
  • a thickness of the silicon oxide layer of 2 pm to 8 pm the temperature dependence of the elastic modulus of the spiral spring and thus the temperature dependence of the return constant C can be minimized.
  • the layers consisting of essentially isotropic silicon crystals have a layer thickness parallel to the spiral spring axis A of 20 nm to 5 ⁇ m.
  • a layer thickness of 20 nm to 5 pm has been found to be ideal in terms of reducing stresses in the silicon substrate.
  • the layers consisting of anisotropic silicon crystals have a layer thickness parallel to the spiral spring axis A of 2 ⁇ m to 150 ⁇ m.
  • a layer thickness of 2 ⁇ m to 150 ⁇ m has proven to be outstandingly suitable for preventing stresses in the material and for achieving an excellent vibration behavior of the spiral spring.
  • the anisotropic silicon crystals have a diameter parallel to the spiral spring plane E of 20 nm to 500 nm and a height parallel to the coil spring axis A of 5 m to 20 pm. Crystals with the dimensions mentioned have proven to be excellent for preventing stresses in the material and for achieving excellent vibration behavior of the coil spring. As will be described below in connection with the method according to the invention, it will not be difficult for a person skilled in the art to control the process parameters in the context of a CVD deposition in such a way that crystals grow in the desired dimensioning.
  • the substantially isotropic silicon crystals have a diameter of 20 nm to 400 nm, preferably 50 nm to 100 nm.
  • intermediate layers which are composed of substantially isotropic silicon crystals with a diameter of 20 nm to 400 nm, preferably 50 nm to 100 nm, stresses in the silicon substrate are particularly greatly reduced.
  • the area of a cutting plane of the spiral spring containing the spiral spring axis A is preferably from 0.001 mm 2 to 0.01 mm 2 and / or the height of the spiral spring parallel to the spiral spring axis A is from 0.05 mm to 0.3 mm.
  • the present invention also includes a method of making a helical spring for mechanical timepieces comprising the steps of providing a silicon wafer, wherein the silicon wafer comprises a sacrificial layer of silicon dioxide, performing an LPCVD method of forming a first sacrificial layer disposed on the silicon dioxide sacrificial layer A layer of polycrystalline silicon, wherein the first layer consists of substantially isotropic silicon crystals having a diameter of 10 nm to 1000 nm, performing a CVD method for forming a second layer of polycrystalline silicon disposed on the first layer of polycrystalline silicon, wherein the second layer consists of anisotropic silicon crystals, wherein the anisotropic silicon crystals have a diameter parallel to the spiral spring plane E of 10 nm to 1000 nm and a height parallel to the coil spring axis A of 2 pm to 50 pm, performing an LPCVD method
  • the process parameters for carrying out a low-pressure chemical vapor deposition (LPCVD) process, as well as the process parameters for carrying out a chemical vapor deposition (CVD) process for the removal of carbon from the gas phase are known to the person skilled in the art.
  • LPCVD low-pressure chemical vapor deposition
  • CVD chemical vapor deposition
  • the structuring of the spiral spring takes place by a person skilled in the known per se material-removing etching or cutting process.
  • the material removal can be carried out, for example, by means of an etching process with the aid of photomasks.
  • the spiral spring is detached from the silicon wafer by dissolving the sacrificial layer of silicon dioxide by means of an etching process.
  • Chemical etching processes using, for example, hydrofluoric acid are well known to those skilled in the art.
  • the oxidation carried out after detachment of the spiral spring from the silicon wafer takes place according to a method familiar to the person skilled in the art. Thus, for example, a thermal oxidation can be carried out at elevated temperatures. Since the oxidation is carried out after the detachment of the coil spring from the silicon wafer, the coil spring is accessible from all sides, whereby an outer silica surface coating is formed.
  • the first and fifth layers consisting of essentially isotropic silicon crystals which are initially formed by the method according to the invention are at least partially oxidized and thus at least partially dissolved as a layer of polycrystalline silicon or at least partially into one Layer of silicon oxide converted.
  • the oxidation is carried out after the detachment of the spiral spring from the silicon wafer for a longer period of time, a complete dissolution of the initially formed first and / or fifth layers consisting of essentially isotropic silicon crystals takes place. One or both of the layers are thereby converted into layers of silicon oxide.
  • the LPCVD process is preferably carried out for a period in which a layer of polycrystalline silicon with a thickness parallel to the spiral spring axis A of from 0.2 ⁇ m to 1 ⁇ m is formed.
  • LPCVD process relatively low Schichtabscheideraten of about 20 nm / min are connected.
  • the preferred layer thicknesses of 0.2 ⁇ m to 1 ⁇ m in the context of the present invention can thus be achieved within acceptable process times.
  • the CVD method is preferably carried out for a period of time in which a layer of polycrystalline silicon having a thickness parallel to the spiral spring axis A of 2 pm to 150 pm is formed.
  • layer deposition rates of 1 ⁇ m / min to 5 ⁇ m / min are achieved in CVD methods.
  • preferred layer thicknesses of 2 m to 150 m can thus be achieved within acceptable process times.
  • the oxidation is carried out after the detachment of the coil spring from the silicon wafer for a period in which a layer of silicon oxide with a thickness parallel to the coil spring axis A from 2 pm to 8 pm is formed.
  • a thickness of the silicon oxide layer of 2 pm to 8 pm the temperature dependence of the elastic modulus of the coil spring and thus the temperature dependence of the return constant C can be minimized.
  • the CVD process is carried out at a process temperature between 600 ° C and 1200 ° C, more preferably between 960 ° C and 1060 ° C.
  • layers of polycrystalline silicon are formed, which are composed of anisotropic silicon crystals with a diameter parallel to the spiral spring plane E of 10 nm to 1000 nm and a height parallel to the coil spring axis A from 2 pm to 50 pm. These have excellent properties with respect to the prevention of stress and to achieve excellent vibration behavior of the coil spring.
  • the CVD process is carried out at a process pressure of between 2.7-10 3 Pa and 13.3-10 3 Pa.
  • layers of polycrystalline silicon are formed, which are made up of anisotropic silicon crystals having a diameter parallel to the spiral spring plane E of 10 nm to 1000 nm and a height parallel to the spiral spring axis A of 2 pm to 50 pm. These have excellent properties in terms of preventing stress and achieving excellent vibratory behavior of the coil spring.
  • the LPCVD process and / or the CVD process is carried out using silane or dichlorosilane as the process gas.
  • the desired layers form within relatively short process times.
  • the CVD process is preferably carried out with an increased gas flow compared to the LPCVD process, an increased process pressure and an elevated process temperature.
  • the CVD method is carried out at process parameters that lead to the deposition of a layer thickness of 1 pm to 5 pm per minute.
  • the preferred layer thicknesses of from 2 ⁇ m to 150 ⁇ m in the context of the present invention can thus be achieved within acceptable process times.
  • the present invention also includes a helical spring for a mechanical watch, wherein the helical spring is made according to one of the methods described above.
  • the present invention includes a mechanical watch with one of the coil springs described above.
  • the functional elements of a mechanical timepiece should ideally show no temperature dependence in their motion behavior.
  • silicon oxide has a temperature coefficient of the modulus of elasticity opposite to the silicon.
  • a surface coating of silicon oxide or silicon dioxide is produced by a thermal oxidation and in the functional element a plurality of armatures are likewise formed by the thermal oxidation.
  • the anchors penetrate into the material of the functional element and provide for a temperature dependence of the movement behavior of the functional element.
  • the substantially isotropic silicon particles preferably have a diameter of 0.03 pm to 1 pm.
  • the solids formed in the solid pores preferably have a diameter of 0.01 m to 0.3 pm.
  • the solid produced by sintering has a density of at least 95% and preferably at least 99% of the density of crystalline silicon.
  • the process according to the invention has a significantly reduced expenditure of time for the production of the silicon oxide surface coating.
  • the oxidation of the silicon can proceed more rapidly due to the pores also located on the surface, since a larger surface area of the silicon particles present in the solid body is accessible for the oxidation.
  • anchors in the functional element are formed by the thermal oxidation such that the anchors of silicon oxide extend at least partially into a second layer of silicon particles.
  • the temperature dependence of the modulus of elasticity of the coil spring and thus the temperature dependence of the return constant C can be minimized.
  • the sensitivity of the coil spring to temperature fluctuations can be minimized.
  • the silicon oxide anchors are formed in the material of the functional element, which protrude into the functional element into the second or third layer of silicon particles. Surprisingly, it has been found that these silicon oxide anchors impart a significantly improved mechanical stability to the functional element.
  • the silicon particles obtained in the abovementioned processes have a "substantially isotropic” form.
  • the term "substantially isotropic” in the context of the present invention means particles which have no clearly defined preferred direction.
  • the silicon particles do not have an ideal isotropic shape because they are not formed as spheres but have slight irregularities such as edges and small, flat surfaces.
  • the diameter of a substantially isotropic silicon particle is understood to mean the maximum diameter of the silicon particle.
  • the isostatic pressing method provided according to the invention is based on the physical law that the pressure in liquids and gases propagates uniformly on all sides and generates forces on the applied surfaces which are directly proportional to these surfaces.
  • a mold filled with silicon particles is introduced into the pressure vessel of a press plant.
  • the pressure acting on all sides of the mold via the liquid in the pressure vessel uniformly compresses the enclosed silicon powder.
  • the binders used are preferably polyvinyl alcohol, polyvinyl butyral, polyethylene glycol and mixtures thereof. These binders have been found to be particularly suitable for use in the manufacture of functional elements for mechanical watches.
  • silicon particles and binder in a weight ratio of silicon particles to binder of 100: 0, 1 to 100: 3 are used. Particular preference is given to using silicon particles and binders in a weight ratio of silicon particles to binder of from 100: 0.2 to 100: 2, and particularly preferably in a weight ratio of from 100: 0.5 to 100: 1.
  • the said preferred amounts of binder are on the one hand large enough to provide a sufficient connection of the silicon particles in the Homogenticiansuzes, and on the other hand low enough to be removed easily after the compression step from the solid can.
  • Ethanol is particularly preferably added to the binder before mixing with the silicon particles, in particular preferably in a weight ratio of ethanol to silicon particles of about 5: 1.
  • a hot isostatic pressing at 10 to 800 MPa and 30 ° C to 1400 ° C can be performed.
  • Excellent properties of the functional elements arise when compacting at a temperature of 600 ° C to 1400 ° C or at a pressure of 100 to 300 MPa.
  • the compression is carried out at a temperature of 600 ° C to 1400 ° C and at a pressure of 100 to 300 MPa.
  • the homogenized mixture of silicon particles and binder is preheated prior to the densification step at a temperature of 100 ° C to 120 ° C.
  • the compression is preferably carried out for a period of 2 to 4 hours.
  • the functional elements produced have particularly good properties if the solid produced by the compacting step has pores with a maximum diameter of 0.001 ⁇ m to 1 ⁇ m.
  • the functional element is separated by removal of the material surrounding the functional element in the manner known to those skilled in the art.
  • the material removal is preferably carried out by etching or cutting.
  • the etching is particularly preferably carried out by a dry etching process, the cutting is particularly preferably carried out by laser cutting.
  • the silica surface coating is produced by thermal oxidation.
  • oxygen acts on the functional element at elevated temperature.
  • the thickness of the silicon oxide surface coating can be controlled.
  • the precise parameters of thermal oxidation to form a silica surface coating are well known in the art. Their finding for a specific oxidation process is therefore no problem for the person skilled in the art.
  • any type of functional element for mechanical watches can be produced by the method according to the invention.
  • the functional elements are preferably a helical spring, a toothed wheel, a gear wheel, an escape wheel, an armature, a riff free or a shaft. Special advantages ben in the production of a coil spring for mechanical watches, since a particularly high mechanical stability and a particularly temperature-independent vibration behavior are required for this functional element.
  • the functional element according to the invention is characterized in that a solid produced from isotropic silicon particles by isostatic compaction has formed a multiplicity of pores having a maximum diameter of 0.001 ⁇ m to 1 ⁇ m.
  • the functional element carries a silicon oxide surface coating on the functional element.
  • a plurality of silicon oxide anchors are formed in the solid body, which extend in the solid state of the functional element at least up to a second layer of silicon particles.
  • the pores formed in the solid body preferably have a diameter of 0.01 ⁇ m to 0.3 ⁇ m.
  • the present invention also includes a mechanical watch having a functional element formed according to the invention. All of the above-mentioned preferred embodiments may individually or in combination with other preferred embodiments further develop the coil spring according to the invention.
  • Fig. 1 is a perspective view of an embodiment of a coil spring used in a mechanical timepiece
  • Figure 2 is a Schamtica view of a cross section through a turn of the coil spring.
  • Fig. 3 is an enlarged view of the Quedozens by the coil spring, wherein on a Ausenthesis a layer of silicon dioxide is applied;
  • Fig. 4 is a schematic detail view of an armature extending from the layer of silicon dioxide into the core of silicon
  • Fig. 5 is another schematic representation of a section through the coil spring wherein the silicon core of the coil spring is constructed in its crystalline structure according to a first embodiment
  • FIG. 6 is another schematic representation of a section through the coil spring, which is constructed according to a further embodiment
  • FIG. 7 is a plan view of a Si wafer produced by a sintering process in which the coil springs have already been produced by etching or cutting
  • FIG. 7 is a plan view of a Si wafer produced by a sintering process in which the coil springs have already been produced by etching or cutting
  • FIG. 8 is a detail view of the area marked A in FIG. 7; FIG.
  • Fig. 9 is a schematic partial view of a vertical section, wherein two opposite side surfaces of the coil spring are shown; 10 to 13, 15 shots with an electronic scanning microscope of a section of the edge region of a turn of a spiral spring, wherein the plan view is shown on the height h of the coil spring;
  • Figure 14 is a perspective view with an electronic scanning microscope of a portion of a turn of the coil spring;
  • FIG. 16 shows various micrographs of a silicon-oxide-wound spiral spring produced from polycrystalline silicon;
  • FIG. 17 shows various micrographs of a coil spring made of monocrystalline silicon and coated with silicon oxide
  • Figure 18 is a schematic view of a cross section of a coil spring in which the silicon crystals are not homogenized and increase in size with increasing height of the coil spring;
  • Figure 19 is a schematic view of a cross section of a coil spring in which the silicon crystals are homogenized by a special process and thus have a widely homogeneous size distribution along the height of the coil spring;
  • Figure 20 is a perspective view of a portion of the coil spring to illustrate the resulting due to the invention bending stiffness. Ways to carry out the invention
  • Figure 1 shows a perspective view of a coil spring 20 for mechanical movements.
  • the spiral spring 20 has a spiral spring plane E which coincides with the oscillation plane of the spiral spring 20 and a spiral spring axis A which extends perpendicular to the spiral spring plane E through the oscillation center of the spiral spring 20.
  • the coil spring 20 has an inner coil spring attachment portion S.
  • the outer spring holding point H of the coil spring 20 serves for the fixed connection of the spiral spring with a circuit board or a bearing plate.
  • the coil spring 20 has a plurality of turns 22.
  • Figure 2 shows a plan view of a cross section 24 through a turn 22 of the coil spring 20.
  • each of the turns 22 of the coil spring 20 consists of a core 25 and a sheath 27, which consists of a layer 34 of silicon dioxide.
  • the layer 34 of silicon dioxide is carried by each of the side surfaces 30 of each turn 22 of the coil spring 20.
  • the layer 34 of silicon dioxide is generated by thermal odidation of the coil spring 20.
  • Figure 3 shows a section through the coil spring 20 of Figure 1, according to an alternative embodiment.
  • the coil spring 20 carries on an outer side a layer 34 of silicon dioxide. This can be achieved by suitable masking measures.
  • the coil spring 20 comprises windings 22 (see FIG. 1), wherein a cross-section 24 of a winding 22 has a height h and a width b. At least one layer 34 of silicon dioxide is applied to a boundary region 31.
  • Each region 26, has at least two Anchor 28 u formed by growing crystals of silicon dioxide 34 in the boundary region 31.
  • the anchors are formed in the process of thermal oxidation (with oxygen or a suitable CVD method) of silicon material of the existing coil spring 20.
  • An E-module may be used in areas 26 ! , 26 2 , ..., 26 n vary by a maximum of 2% to a maximum of 3%.
  • the modulus of elasticity is measured on the total modulus of elasticity of the considered cross-section 24 of the coil spring 20. To calculate the effective modulus of elasticity z.
  • epitaxial deposition processes or directional growth preferentially form crystal orientations or textures, preferably ⁇ 1 10> and ⁇ 1 1 1> and The textures ⁇ 100>, ⁇ 21 1> or ⁇ 331> may also be present, however, because of the different e-moduli of the textures, a homogeneous distribution of the textures over the cross-section 24 of the spiral spring is to be aimed at. There must be at least two different textures in the regions 26 !, 26 2 ,..., 26 n in order to ensure a largely sufficient homogeneity of the cross section 24 of the spiral spring 20.
  • the crystals are shown in simplified form as rectangles or rectangles, but they may be both isotropic and anisotropic, as shown for example in FIGS. 5 or 6.
  • the finished outer surface 39 of the winding 22 of the spiral spring 20 corresponds to the outer surface of the finished at least one layer 34 made of silicon dioxide, ie after completion of the separation process of the spiral spring 20 from the carrier (silicon wafer 10) and after completion of the oxidation process to produce the at least one Layer 34 of silicon dioxide (see, for example, Figures 5 to 9 and the description thereof).
  • the carrier silicon wafer 10
  • the oxidation process to produce the at least one Layer 34 of silicon dioxide
  • FIG. 4 shows a detailed view of an armature 28 u of a region 26, according to FIG. 3.
  • the armature 28 u has an individual roughness R u which does not generally coincide exactly with the mean roughness R over all armatures 28 of all regions 26 - roughness R runs along a center line 32 through all the anchors of all areas.
  • FIGS. 6 and 6 each show a section through a turn 22 of the spiral spring 20 of FIG. 1, wherein the spiral spring axis A is a component of the cutting plane and thus the cutting plane is perpendicular to the spiral spring plane E.
  • the thicknesses of the individual layers are not reproduced to scale in FIGS. 5 and 6, so that it is not possible to deduce from the thickness of the one layer illustrated in the drawing to the thickness of another layer.
  • FIG. 6 shows a state of the coil spring 20 during the manufacturing process.
  • the serving as a carrier silicon wafer 10 is provided in the representation shown in Figure 6 with a sacrificial layer 10.1 made of silicon dioxide.
  • a 0.4 pm thick first layer 1 1 made of polycrystalline silicon is deposited on the sacrificial layer 10.
  • This first layer 1 1 consists of essentially isotropic silicon crystals 9, which in the exemplary embodiment shown have a diameter of 100 nm to 400 nm.
  • the LPCVD procedure is carried out with silane as the process gas at a pressure of 0.6-10 3 Pa and a temperature of 1000 ° C. Due to the deposition rate of about 200 nm / min, the first layer 1 1 builds up within about 2 minutes.
  • a CVD process is performed.
  • a process pressure of 5.7 - 10 3 Pa and a process temperature of 1060 ° C a deposition rate of about 2 pm per minute sets.
  • a second layer 12 of polycrystalline silicon arranged on the first layer 1 1 of polycrystalline silicon is formed with a thickness parallel to the spiral axis A of 40 ⁇ m.
  • the second layer 12 of polycrystalline silicon is made of anisotropic silicon crystals 8, wherein the anisotropic silicon crystals 8 in the illustrated embodiment has a diameter parallel to the spiral spring plane E of 50 nm to 100 nm and a height parallel to the coil spring axis A from 5 pm to 30 pm exhibit.
  • the parameters gas flow, process pressure and process temperature are set to the values for the method described above in connection with the formation of the first layer 11 and an LPCVD method for forming a third 13, arranged on the second 12 layer of polycrystalline silicon 0, 4 m thick layer of polycrystalline silicon performed.
  • This third layer 13 in turn consists of substantially isotropic silicon crystals 9 with a diameter of 100 nm to 400 nm.
  • a fourth polycrystalline silicon layer 14 disposed on the third polycrystalline silicon layer 13 is formed with a thickness parallel to the coil spring axis A of 40 ⁇ m.
  • the fourth layer 14 of polycrystalline silicon likewise consists of anisotropic silicon crystals 8, wherein the anisotropic silicon crystals 8 in the illustrated embodiment have a diameter. have parallel to the spiral spring plane E from 50 nm to 100 nm and a height parallel to the coil spring axis A of 5 pm to 30 pm.
  • the spiral spring connected to the silicon wafer 10 has the shape shown in FIG. Subsequently, the structuring of the spiral spring takes place successively by a material-removing chemical etching process with the aid of photomasks, the detachment of the spiral spring from the silicon wafer 10 by dissolving the sacrificial layer 10.1 made of silicon dioxide by means of a chemical etching process, and the implementation of a thermal oxidation (with oxygen or a suitable CVD method) to produce a layer 34 of silicon oxide.
  • the thermal oxidation (with oxygen or a suitable CVD method) is carried out for a correspondingly selected time period so that a first 1 and a fifth 5 layer 34 of silicon oxide with a layer thickness of about 2.5 ⁇ m are formed.
  • the first consisting of substantially isotropic silicon crystals layer 1 1 dissolves completely.
  • FIG. 1 An inventive embodiment of the coil spring 20 for mechanical movements is shown in FIG.
  • the spiral spring is constructed in a direction parallel to the spiral spring axis A of five layers 1, 2, 3, 4, 5, namely a 2.5 pm thick, first layer 1 of silicon oxide, one arranged on the first layer 1 of silicon oxide, 40th m thick, second layer 2 of polycrystalline silicon, wherein the second layer 2 consists of anisotropic silicon crystals 8, wherein the anisotropic silicon crystals 8 have a diameter parallel to the spiral spring plane E of 50 nm to 100 nm and a height parallel to the spiral spring axis A from 5 pm to 30 pm, a 0.4 pm thick third, arranged on the second layer 2 of polycrystalline silicon layer 3 of polycrystalline silicon, wherein the third layer 3 of substantially isotropic silicon crystals 9 having a diameter of 100 nm to 400 nm, one on the third layer 3rd made of polycrystalline silicon, 40 pm thick, the fourth layer 4 of polycrystalline silicon, wherein the fourth layer 4 of anisotropic silicon crystals
  • the coil spring shown can be manufactured with minimal loss through fractures and cracks of consistently excellent quality. Although the following description refers to a coil spring as a functional element, this should not be construed as limiting the invention.
  • FIG. 7 shows a plan view of an Si wafer 10 produced by a sintering process, in which the spiral springs 20 have already been produced and exposed by etching or cutting.
  • essentially isotropic silicon particles 40 (see FIG. 9) with a diameter of between 0.03 ⁇ m and 1 ⁇ m were used as a by-product in the production of silicon granules with the aid of a fluidized bed Procedures were incurred.
  • the binder used was polyvinyl alcohol.
  • the mixture of silicon particles 40 and binder in the ratio of 100: 0.75 was carried out by spraying a Binder ittel / ethanol mixture on the silicon particles 40.
  • the mixture thus produced was prepared by milling in a ball mill for a period of Homogenized for 12 hours with simultaneous vacuum degassing.
  • the homogenized mixture of silicon particles 40 and binder was sintered to a solid.
  • the sintering is a hot isostatic compaction, this is carried out at a temperature of 1000 ° C and a pressure of 250 MPa for 3 hours.
  • the produced solid or Si wafer 6 has pores 2 (see FIG. 9) with a maximum diameter P of 0.001 ⁇ to 1 m.
  • the solid produced by the densification of the homogenized mixture of silicon particles 1 and binder preferably has a density of at least 95%, preferably at least 99%, of the density of crystalline silicon.
  • the binder was removed by evacuation from the solid produced in this way.
  • the separation of the binder is preferably carried out by evacuation or by purging with an inert gas. Simultaneously with the separation of the binder, the silicon solid formed is cooled to room temperature.
  • FIG. 8 shows a detailed view of the region of the Si wafer 10 labeled A in FIG. 6. It is obvious to a person skilled in the art that the material of the spiral spring 20 can be different.
  • the separation of the coil spring 20 is preferably carried out by a dry etching, whereby the surrounding the coil spring 20 material 21 is removed.
  • the silicon particles 40 illustrated as spheres in an idealized manner in FIG. 9 each have an average diameter D of between 0.03 ⁇ m and 1 ⁇ m. It is a schematic partial view of a vertical section shown, wherein two opposite side surfaces 30 of the coil spring 20 are shown in part. Between the individual silicon particles 40, the pores 42 can be seen, which have formed due to the sintering process. The pores 42 have a maximum diameter P of 0.001 pm to 1 pm, preferably 0.01 pm to 0.3 pm.
  • the solid (Si wafer 10) produced by compacting a homogenized mixture of silicon particles 1 and the binder polyvinyl alcohol has a density of at least 95%, preferably at least 99%, of the density of crystalline silicon. Depending on the choice of the size distribution of the silicon particles 40, the density of the sintered solid body can correspond to up to 99.9% of the density of crystalline silicon.
  • the layer 34 on the silicon surface is formed in the course of the treatment of the Si wafer 10.
  • a plurality of anchors 44 of silicon oxide or silicon dioxide are formed. within the Si wafer 10, which have the material properties described above.
  • the individual silicon particles 1 arrange themselves during the compaction in layers 45 ! , 45 2 , .., 4 5 n . Due to the size distribution of the silicon particles 40 and the size distribution of the pores 42 in the Si wafer 10, the layers 45 ! , 45 2 , .., 45 n are shown only schematically.
  • the size distribution of the pores 42 in the Si wafer 10 and the treatment parameters in the furnace in the production of the layer 34 on the silicon surface cause the largest proportion of the anchor 44 of silicon oxide at least until the second layer 45 2 and 45 n - i extends from silicon particles 40th
  • the spiral spring thus produced has excellent properties in terms of temperature behavior and excellent mechanical stability.
  • FIG. 10 to 13, 15 show images with an electronic scanning microscope of a section of the edge region of a turn of a spiral spring, wherein the plan view is shown on the height h of the coil spring.
  • FIG. 10 shows an enlarged detail of FIG. 11, and
  • FIG. 12 shows an enlarged detail of FIG. 13.
  • FIGS. 10 and 11 show, with respect to a first sample, a section of the cross-section 24 of a winding 22 of a first spiral spring, wherein the roughness on the finished outer surface 39 of the winding 22 of the first spiral spring is comparatively large.
  • the finished outer surface 39 also corresponds to the side surface 16 in FIG. 9.
  • FIGS. 12 and 13 show, with respect to a second sample, a section of the cross section 24 of a winding 22 of another second spiral spring, the roughness on the finished outer surface 39 of the winding 22 of the second spiral spring of FIGS. 12 and 13 in comparison with FIGS. 10 and 1 1 is small.
  • the finished outer surface 39 of the winding 22 of the respective spiral spring corresponds to the outer surface of the respective finished at least one layer of silicon dioxide 34, ie after completion of the separation process of the respective coil spring from the carrier, for example from the silicon wafer 10, and after completion of the oxidation process for producing the at least one layer of silicon dioxide 34 (cf., for example, FIGS. 5 to 9 and the description thereof).
  • the roughness or roughness depth R of the material of the transition or boundary region 30 to the at least one oxide layer, in particular silicon dioxide layer 34 is considered.
  • This material can be, for example, amorphous and / or polycrystalline and / or monocrystalline silicon, for example layers 2, 4, 12, 14 of anisotropic silicon crystals, layers 3, 11, 13 of substantially isotropic silicon (-5) crystals, respectively anisotropic silicon crystals 8 and isotropic silicon crystals 9, respectively.
  • the roughness depth of the output surface 38 for applying the at least one layer of silicon dioxide 34 thus for example the etched silicon side surface 38 according to FIG.
  • a roughness R z of the output surface 38 in the amount of 0.001 pm to 3 pm, preferably from 0.01 pm to 2 pm, has proven to be ideal with respect to the reduction of stresses in the finished coil spring 20.
  • the surface roughness R z of the finished outer surface 39 should be 0.001 m to 2 pm.
  • FIG. 14 shows a perspective view with an electronic scanning microscope of a portion of a winding 22 of the coil spring.
  • FIG. 16 shows various micrographs of a coil spring made of polycrystalline silicon and coated with silicon oxide.
  • FIG. 17 shows various microscopic photographs of a spiral spring produced from monocrystalline silicon 36 and coated with silicon dioxide 34.
  • FIG. 18 shows a schematic view of a cross section of a spiral spring 20, in which the silicon crystals 36 are not homogenized and increase in size as the height h of the spiral spring 20 increases.
  • FIG. 19 shows a schematic view of a cross section of a spiral spring 20, in which the silicon crystals 36 are homogenized by a special process, for example annealing, as described above and thus have a largely homogeneous size distribution along the height h of the spiral spring 20.
  • Figure 20 is a perspective view of a portion of the coil spring 20 illustrating the bending stiffness resulting from the invention, as previously described.

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Abstract

L'invention concerne un ressort hélicoïdal (20) destiné à un mouvement d'horlogerie mécanique. La section transversale (24) du ressort hélicoïdal (20) comprend sur toute la hauteur (h) du ressort hélicoïdal (20) au moins deux parties superposées (261, …, 26n), i=1, …, n, composées de silicium polycristallin. Chaque partie (26i) comprend au moins deux ancres formées par croissance des cristaux de l'oxyde de silicium (34 dans la zone limite (30), chaque ancre (28i,j) présentant une rugosité (Ri,j), j=1, …, m. Dans chaque partie (26i) est agencée au moins une ancre (28i,j) qui présente la même rugosité qu'une autre ancre (28i-1,j', 28i+1,j') d'une partie (26i) adjacente. L'invention concerne par ailleurs un procédé de fabrication d'au moins un élément fonctionnel (8) destiné à un mouvement d'horlogerie mécanique. Des particules de silicium et/ou des cristaux de silicium (1, 36) sont répartis sur la section transversale (24) de l'élément fonctionnel (8, 20) de manière homogène en termes de taille et d'orientation des particules de silicium ou des cristaux de silicium (1, 36).
PCT/IB2014/066756 2013-12-11 2014-12-10 Ressort hélicoïdal destiné à un mouvement d'horlogerie mécanique Ceased WO2015087252A1 (fr)

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EP3285124A1 (fr) * 2016-08-17 2018-02-21 Richemont International SA Résonateur mécanique pour pièce d'horlogerie ainsi que procédé de réalisation d'un tel résonateur
US20200292991A1 (en) * 2019-03-14 2020-09-17 Seiko Epson Corporation Watch Component, Watch Movement And Watch
US12001169B2 (en) 2019-07-16 2024-06-04 Seiko Epson Corporation Watch component, watch movement and watch
DE102023135139A1 (de) 2023-01-03 2024-07-04 Damasko Präzisionstechnik GmbH & Co. KG Optisches Messverfahren für archimedische Flachspiralen und Spiralfeder mit dafür optimierter Geometrie

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3285124A1 (fr) * 2016-08-17 2018-02-21 Richemont International SA Résonateur mécanique pour pièce d'horlogerie ainsi que procédé de réalisation d'un tel résonateur
US20200292991A1 (en) * 2019-03-14 2020-09-17 Seiko Epson Corporation Watch Component, Watch Movement And Watch
US11927916B2 (en) * 2019-03-14 2024-03-12 Seiko Epson Corporation Watch component, watch movement and watch
US12001169B2 (en) 2019-07-16 2024-06-04 Seiko Epson Corporation Watch component, watch movement and watch
DE102023135139A1 (de) 2023-01-03 2024-07-04 Damasko Präzisionstechnik GmbH & Co. KG Optisches Messverfahren für archimedische Flachspiralen und Spiralfeder mit dafür optimierter Geometrie
DE102023133827A1 (de) 2023-01-03 2024-07-04 Damasko Präzisionstechnik GmbH & Co. KG Optisches Messverfahren für archimedische Flachspiralen und Spiralfeder mit dafür optimierter Geometrie
EP4398047A1 (fr) 2023-01-03 2024-07-10 Damasko Präzisionstechnik GmbH & Co. KG Procédé de mesure optique pour spires d'archomètre plat et spiral à géométrie optimisée pour ce procédé
DE102023133827B4 (de) 2023-01-03 2024-12-05 Damasko Präzisionstechnik GmbH & Co. KG Optisches Messverfahren für archimedische Flachspiralen und Spiralfeder mit dafür optimierter Geometrie

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