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WO2015080081A1 - Mecanisme d'apport de liquide chimique et dispositif de fabrication de petite taille - Google Patents

Mecanisme d'apport de liquide chimique et dispositif de fabrication de petite taille Download PDF

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Publication number
WO2015080081A1
WO2015080081A1 PCT/JP2014/081051 JP2014081051W WO2015080081A1 WO 2015080081 A1 WO2015080081 A1 WO 2015080081A1 JP 2014081051 W JP2014081051 W JP 2014081051W WO 2015080081 A1 WO2015080081 A1 WO 2015080081A1
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WO
WIPO (PCT)
Prior art keywords
nozzle
plunger
chemical
resist
chemical solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2014/081051
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English (en)
Japanese (ja)
Inventor
義久 扇子
史朗 原
ソマワン クンプアン
翔 武内
土井　幹夫
成雄 荒崎
幸弘 杉山
晃一 服部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
PULSA Co Ltd
National Institute of Advanced Industrial Science and Technology AIST
Litho Tech Japan Corp
Original Assignee
PULSA Co Ltd
National Institute of Advanced Industrial Science and Technology AIST
Litho Tech Japan Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2013246868A external-priority patent/JP2017027965A/ja
Priority claimed from JP2013250000A external-priority patent/JP2017027966A/ja
Application filed by PULSA Co Ltd, National Institute of Advanced Industrial Science and Technology AIST, Litho Tech Japan Corp filed Critical PULSA Co Ltd
Publication of WO2015080081A1 publication Critical patent/WO2015080081A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner

Definitions

  • the present invention relates to a chemical solution supply mechanism for dropping a chemical solution on the surface of a processing substrate, and a small manufacturing apparatus using the chemical solution supply mechanism.
  • the present invention can be applied to a resist coating apparatus and a resist developing apparatus used in a semiconductor manufacturing process using a small semiconductor wafer.
  • a conventional chemical solution supply mechanism will be described by taking as an example one mounted on a resist coating apparatus for a semiconductor manufacturing process.
  • the spin chuck is rotated while the semiconductor wafer is fixedly held on the spin chuck. And a resist film is formed in the surface of this semiconductor wafer by dripping a resist liquid on a semiconductor wafer from a nozzle.
  • a resist solution storage tank is arranged at a location away from the spin chuck, the resist solution in the tank is sucked up by a pump, and supplied to a nozzle using a pipe. As a result, it was dripped onto the semiconductor wafer (see FIG. 4 of Patent Document 1).
  • the resist supply bottle is accommodated in a resist thermostat, so that the resist solution in the resist supply bottle is maintained at a predetermined temperature.
  • a resist pipe and a nozzle are accommodated in a temperature control liquid pipe, and the temperature control liquid is circulated in the temperature control liquid pipe. The temperature of the temperature control liquid is monitored and controlled by a temperature control device. As a result, the resist solution flowing through the resist piping and nozzles is kept at a predetermined temperature.
  • JP 2006-114607 A Japanese Patent Laid-Open No. 5-74698
  • the above-described pump is expensive and is one of the causes of the large-scale apparatus. Therefore, using such a pump hinders miniaturization and cost reduction of the resist coating apparatus.
  • Degradation refers to quality degradation such as oxidation of the resist solution due to the permeation of atmospheric gas from the outside, quality degradation due to dissolution of substances on the inner surface of the piping into the resist solution, and these gases and substances are chemically mixed with the resist solution. These include quality degradation due to reaction, generation of bubbles due to liberation of dissolved gas, and the like. The deterioration of the resist solution causes the quality of semiconductor products and the yield to decrease.
  • the conventional resist coating apparatus requires a resist thermostat, a temperature control liquid pipe, a temperature control device and the like in order to adjust the temperature of the resist solution. This also causes the increase in size and cost of the device.
  • An object of the present invention is to provide a chemical supply mechanism capable of accurately controlling the supply amount even when the chemical supply amount is small, and capable of adjusting the temperature of the chemical solution with a small mechanism, and The purpose is to provide the small manufacturing apparatus used at low cost.
  • a chemical solution supply apparatus is a chemical solution supply mechanism used in a manufacturing process in which a predetermined amount of a chemical solution is dropped onto the surface of a processing substrate, and includes a cylindrical syringe body that contains the chemical solution, A syringe having a plunger insertion port provided at one end, a nozzle provided at the other end of the syringe body, a plunger fitted into the syringe body from the plunger insertion port, and the plunger And a plunger moving mechanism for discharging the predetermined amount of the chemical solution from the nozzle by moving the nozzle toward the nozzle by a predetermined distance.
  • the plunger moving mechanism uses a moving member that supports the plunger, a screw shaft that moves the moving member according to the amount of rotation, and a rotational power transmission that rotates the screw shaft using a power source. It is desirable to provide a part.
  • a solvent receiver for storing the chemical liquid discharged from the nozzle and discarded before dropping the chemical liquid on the surface of the processing substrate.
  • the tip portion of the nozzle is formed so as to be thinner as it approaches the discharge port.
  • the nozzle is configured to temporarily store the chemical liquid for at least one step, and the temperature of the chemical liquid stored in the nozzle is adjusted by adjusting the temperature of the nozzle. It is desirable to adjust.
  • the chemical solution may be a resist solution or a resist developer used in a semiconductor manufacturing process.
  • the diameter of the processing substrate can be 20 mm or less.
  • a small-sized manufacturing apparatus is a small-sized manufacturing apparatus that performs a manufacturing process in which a predetermined amount of chemical liquid is dropped onto the surface of a processing substrate using a chemical liquid supply mechanism, and the chemical liquid supply mechanism stores the chemical liquid.
  • a syringe having a cylindrical syringe body, a plunger insertion port provided at one end of the syringe body, and a nozzle provided at the other end of the syringe body, and the syringe from the plunger insertion port
  • the chemical solution supply mechanism of the present invention since the amount of the chemical solution discharged from the syringe can be controlled by the distance by which the plunger moving mechanism moves the plunger, even if the discharge amount of the chemical solution is small, Accurate control of this discharge amount is possible.
  • the chemical liquid accommodated in the syringe body is discharged by moving the plunger by the plunger moving mechanism, so that the size reduction and the price reduction are easy.
  • the chemical solution passage is very short. Therefore, the deterioration of the chemical solution in this passage (oxidation, the substance on the inner surface of the passage) Melting, chemical reaction, generation of bubbles, etc.) hardly occur. Further, even if the chemical solution in the passage is discarded due to deterioration of the chemical solution, the discard amount may be very small.
  • the chemical solution supply mechanism of the present invention by dropping a part of the chemical solution in the solvent receptacle before dropping the chemical solution on the surface of the processing substrate, it is possible to easily prevent the chemical solution deteriorated due to oxidation or the like.
  • the tip of the nozzle is formed so as to become thinner as it approaches the discharge port, so that it is difficult for the chemical to adhere to the tip of the nozzle. It can be controlled stably and accurately.
  • the temperature of the chemical solution container or the like it is not necessary to adjust the temperature of the chemical solution container or the like by storing the chemical solution for at least one step in the nozzle and adjusting the temperature of the chemical solution stored in the nozzle.
  • the temperature of the chemical solution can be adjusted at a low cost with a simple structure.
  • the chemical temperature adjusting mechanism by adjusting the temperature of the chemical stored in the nozzle by blowing a gas of a predetermined temperature onto the nozzle, the chemical temperature adjusting mechanism can be configured very simply and inexpensively.
  • the resist coating process and the resist developing process can be performed accurately and inexpensively.
  • the chemical solution supply mechanism of the present invention can be easily downsized by setting the diameter of the processing substrate to 20 mm or less.
  • FIG. 1 is a conceptual perspective view showing an overall configuration of a small manufacturing apparatus according to Embodiment 1.
  • FIG. 1 is a conceptual plan view showing a configuration of a resist coating apparatus according to Embodiment 1.
  • FIG. 3 is a cross-sectional view illustrating a configuration of a temperature adjustment mechanism according to Embodiment 1.
  • FIG. 4 is a partially enlarged view of FIG. 3.
  • FIG. 4 is a partially enlarged view of the nozzle shown in FIG. 3.
  • Embodiment 1 of the Invention will be described taking as an example the case where the present invention is applied to a resist coating apparatus for a small semiconductor wafer.
  • FIG. 1 is a perspective view conceptually showing the overall configuration of the small-sized semiconductor manufacturing apparatus according to the first embodiment.
  • the small semiconductor manufacturing apparatus 100 includes a resist coating apparatus 110 as a processing chamber and an apparatus front chamber 120. Accommodate.
  • the resist coating apparatus 110 and the apparatus front chamber 120 are configured to be separable.
  • the resist coating apparatus 110 receives a semiconductor wafer (not shown) from the apparatus front chamber 120 via a wafer transfer port (not shown). Then, a resist film forming process is performed on the semiconductor wafer. Detailed description of the resist coating apparatus 110 will be described later.
  • a semiconductor wafer having a small diameter of 20 mm or less for example, 12.5 ⁇ 0.2 mm is used.
  • the apparatus front chamber 120 is a room for taking out a semiconductor wafer accommodated in a wafer transfer container (not shown) and transferring it to the resist coating apparatus 110.
  • the top plate 120 a of the apparatus front chamber 120 has a container mounting table 121 for mounting a wafer transfer container, a pressing lever 122 for pressing and fixing the mounted wafer transfer container from above, and a small semiconductor manufacturing apparatus 100.
  • An operation panel 124 having operation buttons 141 and the like for performing operations is provided.
  • the front chamber 120 of the apparatus includes a transfer robot (not shown) for loading a semiconductor wafer taken out from the wafer transfer container into the resist coating apparatus 110.
  • FIG. 2 is a plan view conceptually showing the configuration of the resist coating apparatus 110.
  • a transfer unit 210 and HMDS (hexamethyldisilazane) treatment are performed inside one resist coating device 110 (for example, one side of the horizontal section of the housing is 30 cm).
  • a unit 220, a spin coater unit 230, a resist nozzle unit 240, an EBR (Edge Bead Removal) nozzle unit 250, a bake processing unit 260, and the like are accommodated.
  • the transfer unit 210 receives a semiconductor wafer from the transfer robot (not shown) and sequentially transfers the semiconductor wafer to the HMDS processing unit 220, the spin coater unit 230, and the bake processing unit 260.
  • the main body 211 of the transport unit 210 includes a pair of hands 212a and 212b.
  • Arc-shaped wafer mounting portions 213a and 213b are formed at the tip portions of the hand portions 212a and 212b so as to face each other.
  • the semiconductor wafer is placed so that the outer edge portion comes into contact with these wafer placement portions 212a and 212b.
  • the hand portions 212a and 212b can be opened in a direction away from each other or closed in a direction approaching each other.
  • FIG. 2 shows a state in which the hand portions 212a and 212b are closed.
  • the transport unit 210 can rotate the main body portion 211 and move the hand portions 212a and 212b forward and backward by a mechanism (not shown).
  • the HMDS processing unit 220 is a mechanism for performing HMDS processing (that is, processing for replacing OH groups on the surface of the semiconductor wafer with HMDS in order to improve the adhesion between the resist film and the semiconductor wafer).
  • the HMDS processing unit 220 includes a hot plate 221 and, for example, four mounting pins 222a to 222d.
  • the mounting pins 222a to 222d are arranged substantially evenly inside the outer edge of the hot plate 221. These mounting pins 222a to 222d can be moved up and down by a lifting mechanism (not shown), and are housed in the hot plate 221 when lowered.
  • the semiconductor wafer is placed on the wafer placing portions 213a and 213b with the hand portions 212a and 212b closed, and the main body of the transfer unit 210 is placed. 211 is rotated to a position facing the hot plate 221, and the hand portions 212 a and 212 b are further advanced onto the hot plate 221. Then, the mounting pins 222a to 222d are raised and the semiconductor wafer is lifted from below to be separated from the hand portions 212a and 212b. Subsequently, the hand portions 212a and 212b are opened and retracted. Thereafter, the mounting pins 222 a to 222 d are lowered to the position where they are accommodated in the hot plate 221, thereby placing the semiconductor wafer on the hot plate 221.
  • the spin coater unit 230 is a mechanism for performing resist film formation, EBR processing, back surface cleaning processing, and the like on a semiconductor wafer.
  • the spin coater unit 230 includes a mounting portion 231 for holding and rotating the semiconductor wafer.
  • the resist nozzle unit 240 is a mechanism for applying a resist solution to a rotating semiconductor wafer in the resist film forming process.
  • the nozzle 241 of the resist nozzle unit 240 is waiting above the solvent receiver 242.
  • the resist nozzle unit 240 rotates the arm 243 to move the nozzle 241 to above the center of the semiconductor wafer (not shown) placed on the placement portion 231. Then, a resist solution is dropped onto the semiconductor wafer.
  • the detailed structure of the resist nozzle unit 240 will be described later with reference to FIGS.
  • the EBR nozzle unit 250 is a mechanism for supplying a resist solution to the peripheral portion of the semiconductor wafer in the EBR step (that is, a step of removing the resist film formed on the peripheral portion of the semiconductor wafer).
  • the EBR nozzle unit 250 rotates the nozzle 251 from above the solvent receiver 252 to above the peripheral edge of the semiconductor wafer placed on the placement unit 231 to drop the resist solution.
  • the baking unit 260 is a mechanism for heating the semiconductor wafer in order to solidify the resist film.
  • the bake processing unit 260 includes a hot plate 261 and, for example, four mounting pins 262a to 262d.
  • the mounting pins 262a to 262d are substantially evenly arranged inside the outer edge portion of the hot plate 261, and can be moved up and down by a lifting mechanism (not shown). Since the procedure for placing the semiconductor wafer on the hot plate 261 is the same as that in the case of the HMDS processing unit 220, description thereof is omitted.
  • FIG. 3 is a side view showing the configuration of the resist nozzle unit 240.
  • FIG. 4 is an enlarged view of the solvent receiver 242
  • FIG. 5 is an enlarged view of the nozzle 241.
  • the resist nozzle unit 240 includes a resist solution container 310.
  • the resist solution container 310 includes a syringe part 311, a plunger part 312, and the nozzle 241 described above.
  • the syringe unit 311 includes a cylindrical syringe body 311a.
  • the syringe body 311a contains a resist solution.
  • a plunger insertion port 311b having substantially the same inner diameter as the syringe part 311 is provided at the upper end of the syringe body 311a.
  • a spout 311 c is formed to protrude from the lower end of the syringe part 311.
  • the plunger portion 312 has an outer diameter substantially the same as the inner diameter of the plunger insertion port 311b provided in the syringe portion 311 and is inserted into the syringe body 311a from the plunger insertion port 311b.
  • the plunger portion 312 may include a gasket or the like in order to maintain airtightness between the outer peripheral surface of the lower end portion and the inner peripheral surface of the syringe body 311a.
  • the nozzle 241 is fitted into the spout 311c of the syringe part 311. As shown in FIG. 5, the tip portion 241a of the nozzle 241 is formed so that the thickness decreases as it approaches the tip. In the first embodiment, the nozzle 241 is fitted into the spout 311c. However, the nozzle 241 may be integrally formed (that is, the spout 311c may be used as a nozzle as it is). Is possible.
  • a resist film can be formed by dropping about 2 drops of resist solution using a nozzle 241 having an inner diameter of 0.56 mm.
  • the tip portion 241a of the nozzle 241 is formed so as to become thinner as it approaches the tip, thereby making it difficult to attach the resist solution. Thereby, accurate control of the resist solution discharge amount can be maintained without impairing the sufficient strength of the nozzle 241.
  • the resist solution R stored in the liquid passage 241c is pushed out by the new resist solution R when the new resist solution R is supplied from the syringe unit 311 into the nozzle 241 and is discharged to the discharge port 241b. And is dropped onto the surface of a semiconductor wafer (not shown).
  • the solvent receiver 242 is a container for containing the resist solution R dripping from the nozzle 241 when the nozzle 241 is in the standby position (that is, the position when the resist coating process is not performed).
  • the solvent receiver 242 discards the resist solution R stored at the tip portion of the nozzle 241 before the resist coating process. As a result, even when the resist solution R at the tip portion of the nozzle 241 is deteriorated due to oxidation or the like, the possibility of deteriorating the quality or yield of the semiconductor product is reduced.
  • the solvent receiver 242 stores an insertion portion 242a for inserting the nozzle 241; a cup portion 242b for receiving the dripping resist solution R; and a resist solution R received by the cup portion 242b in a waste liquid container (not shown).
  • a waste liquid pipe 242c A waste liquid pipe 242c.
  • an air supply port 242d for blowing a temperature adjusting gas to the nozzle 241 is provided on the side wall of the insertion portion 242a.
  • an air supply pipe 242e is connected to the air supply port 242d.
  • an air supply pipe 242g is connected to the air supply pipe 242e via a gas supply valve 242f.
  • the supply pipe 242g is connected to a gas supply mechanism (gas cylinder or the like) (not shown).
  • the container supporter 320 includes a support body 321, a syringe support 322, a plunger support 323, and a plunger moving mechanism 324.
  • the syringe support 322 is fixed to and supported by the support main body 321 and is detachably fixed by tightening the syringe 311 of the resist solution container 310 using a screw 322a.
  • the plunger support 323 is fixed to a moving member 324f (described later) of the plunger moving mechanism 324 and fixedly supported so as to be removable by tightening the plunger portion 312 of the resist solution container 310 using a screw 323a. .
  • the plunger moving mechanism 324 raises and lowers the plunger portion 312 of the resist solution container 310 by raising and lowering the plunger support 323.
  • the plunger moving mechanism 324 when the stepping motor 324a rotates the pulley 324b, this rotational power is transmitted to the pulley 324d via the belt 324c.
  • the screw shaft 324e is rotated by the rotation of the pulley 324d, and thereby the moving member 324f is moved up and down.
  • the plunger support 323 is fixedly supported by the moving member 324f. Therefore, when the moving member 324f is lowered, the plunger support 323 is raised and lowered, and thereby the plunger portion 312 is raised and lowered.
  • the container support 320 is fixedly supported by the arm 243 (described above).
  • the arm 243 is moved up and down and rotated by the arm driving unit 330.
  • the container support part 320 detachably supports the syringe part 311 and the plunger part 312. For this reason, the resist solution container 310 can be replaced with a simple operation. Therefore, in the first embodiment, when the resist solution in the resist solution container 310 is used up, when the resist solution is deteriorated, or when the type of the resist solution is to be switched, a new resist solution container 310 and Just replace it. This eliminates the need to fill the tank with the resist solution, replace the deteriorated resist solution in the pipe with a new one, flush the pipe (described above), etc., which is necessary in the conventional resist coating apparatus. The work burden can be reduced.
  • the cost of one resist solution container 310 is very low. Therefore, even if the resist solution container 310 is disposable, the cost increase is slight.
  • the resist solution container 310 that has not been used up can be stored and reused in an appropriate environment.
  • the syringe unit 311 and the plunger unit 312 are detachably supported using the screws 322a and 323a.
  • other methods for example, the syringe support 322 and the plunger support 323 may be used). It is good also as providing a holder and supporting by the method of fitting the syringe part 311 and the plunger part 312).
  • the nozzle 241 of the resist nozzle unit 240 is waiting above the solvent receiver 242 as described above.
  • the resist liquid R for at least one resist coating process is stored.
  • the nozzle 241 is blown with gas from an air supply port 242d.
  • As this gas a gas whose temperature is adjusted is used.
  • the resist solution R in the liquid path 241c is adjusted to a predetermined temperature.
  • the gas blowing is continuously performed while the nozzle 241 is retracted onto the solvent receiver 242.
  • the kind of gas is not limited, For example, air and nitrogen can be used. Further, as this gas, it is desirable to use a clean gas from which dust is sufficiently removed in order to improve the yield of the resist coating process.
  • a semiconductor wafer is mounted on the mounting portion 231 (see FIG. 2) of the spin coater unit 230.
  • the resist solution R at the tip of the nozzle 241 is discarded in the solvent receiver 242. This discarding prevents the deterioration of the quality of the semiconductor product and the like when the resist solution R at the tip portion is deteriorated due to oxidation or the like as described above.
  • the amount of resist solution R discarded is, for example, about 0.02 cc or less.
  • the plunger moving mechanism 324 slightly raises the plunger portion 312 using the moving member 324f.
  • the plunger moving mechanism 324 slightly raises the plunger portion 312 before the movement of the nozzle 241, when the atmospheric gas is injected into the tip portion of the nozzle 241 and the resist solution container 310 is moved, the resist solution R droops from the nozzle 241. Can prevent falling.
  • the arm driving unit 330 raises the arm 243 to move the nozzle 241 to above the insertion portion 242a, and further rotates the arm 243 to move the nozzle 241 to above the central portion of the semiconductor wafer. .
  • the moving member 324f is lowered as described above, and the plunger portion 312 is lowered (that is, the plunger portion 312 approaches the nozzle 241). Moving).
  • the resist solution in the syringe part 311 is dropped from the nozzle 241 onto the semiconductor wafer.
  • the downward movement amount of the plunger portion 312 is set to such a value that the resist solution for one resist application step is poured out from the spout 311c.
  • the rotation amount of the stepping motor 324a is controlled by the number of input voltage pulses. For this reason, in this Embodiment 1, the descending amount of the plunger part 312 can be controlled accurately, and therefore the amount of resist solution dispensed can be accurately controlled.
  • the inner diameter of the tip of the nozzle 241 is reduced (for example, when a needle-like nozzle is used), for example, by inputting 300 voltage pulses to the stepping motor 324a, one drop (for example, 0.001cc) ) Resist solution R can be dropped. In this case, the droplet resolution is 0.001 cc / 300 pulses, ie 0.00003 cc / pulse.
  • the resolution of the position of the plunger portion 312 is about 0.00017 mm / pulse, that is, 170 nm / pulse.
  • the resist solution R for one resist coating step is poured out from the spout 311c of the resist solution container 310 to the nozzle 241, the resist solution R stored in the liquid path 241c of the nozzle 241 is removed. Extruded and discharged from the discharge port 241 b of the nozzle 241. Then, the discharged resist solution R is dropped onto a semiconductor wafer (not shown). At this time, the amount of the resist solution R discharged from the discharge port 241b is also an amount corresponding to one resist coating process.
  • At least one resist application step of the resist solution R is stored in the liquid path 241c, and the temperature is adjusted by blowing gas during standby. Therefore, the resist solution R dropped on the surface of the semiconductor wafer is the resist solution R adjusted to a predetermined temperature.
  • the resist solution R poured out from the spout 311c to the nozzle 241 is newly stored in the liquid passage 241c of the nozzle 241 as it is.
  • the arm driving unit 330 rotates the arm 243, so that the nozzle 241 returns to the standby position, that is, above the solvent receiver 242 (see FIG. 2).
  • the resolution of the liquid amount is about 0.1 cc or less. This resolution is determined by the accuracy of human control by hand, the scale unit printed on the syringe unit 311, and the like. In the case of manual control, there are individual differences in resolution, and even the same person cannot always guarantee the same resolution.
  • the conventional syringe is suitable for the usage method of inhaling only the chemical
  • the amount of the resist solution discharged from the syringe 311 can be controlled by the distance by which the plunger moving mechanism 324 moves the plunger 312. Even when the amount is small, the discharge amount can be accurately controlled.
  • the moving distance of the plunger 312 is controlled by the amount by which the stepping motor 324a rotates the screw shaft 324e, it becomes very easy to control the discharge amount of the resist solution very accurately. Furthermore, according to such a mechanism, it is easy to reduce the size and cost of the resist solution supply mechanism.
  • the solvent receiver 242 is provided, and before the resist solution R is dropped onto the surface of the processing substrate, a part of the resist solution R stored in the tip portion 241a of the nozzle 241 is removed as a solvent. Since the waste is discarded, it is possible to prevent the use of a chemical solution that has deteriorated due to oxidation or the like.
  • the tip portion 241a of the nozzle 241 is formed so as to become thinner as it approaches the discharge port 241b. Therefore, the resist solution is difficult to adhere to the discharge port 241b.
  • the discharge amount of the resist solution can be stably and accurately controlled.
  • the resist liquid R for one resist application process is stored in the liquid path 241c of the nozzle 241, and temperature adjustment is performed. Therefore, according to the first embodiment, it is not necessary to adjust the temperature of the resist solution R in the resist solution container 310. Therefore, the temperature of the resist solution can be adjusted at a low cost with a simple structure. it can.
  • the temperature of the chemical solution stored in the liquid path 241c is adjusted by blowing a gas at a predetermined temperature onto the nozzle 241, so that the temperature adjusting liquid is used, etc.
  • the mechanism for temperature adjustment can be configured very simply and inexpensively.
  • a small semiconductor manufacturing apparatus 100 that uses a semiconductor wafer having a diameter of 20 mm or less can be provided at low cost.
  • the present invention is applied to a resist coating apparatus
  • the present invention can also be applied to other semiconductor manufacturing apparatuses such as a resist developing apparatus.
  • the present invention can also be applied to manufacturing apparatuses other than semiconductor manufacturing apparatuses.
  • devices from other types of substrates for example, insulating substrates such as sapphire substrates and conductive substrates such as aluminum substrates
  • non-disc-shaped (for example, rectangular) processing substrates It is applicable also to the manufacturing apparatus which manufactures.
  • a large manufacturing apparatus such as a semiconductor manufacturing apparatus using a large-diameter semiconductor wafer such as 8 inches or 12 inches. It can also be used in other manufacturing equipment.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Coating Apparatus (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

L'invention concerne un mécanisme d'apport de liquide chimique permettant de régler précisément la quantité d'apport d'un liquide chimique, même si cette quantité est faible, ledit mécanisme étant de petite taille et peu coûteux. Le mécanisme d'apport de liquide chimique est pourvu d'une seringue, qui comporte : un corps de seringue cylindrique destiné à recevoir un liquide chimique ; une ouverture d'insertion de piston, prévue à une extrémité du corps de seringue ; et une buse, prévue à l'autre extrémité du corps de seringue. Un piston est inséré dans le corps de seringue à partir de l'ouverture d'insertion du piston. Un mécanisme de déplacement de piston déplace le piston en direction de la buse selon une distance prédéterminée afin de décharger par la buse une quantité prédéterminée du liquide chimique.
PCT/JP2014/081051 2013-11-29 2014-11-25 Mecanisme d'apport de liquide chimique et dispositif de fabrication de petite taille Ceased WO2015080081A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2013-246868 2013-11-29
JP2013246868A JP2017027965A (ja) 2013-11-29 2013-11-29 薬液供給機構及び小型製造装置
JP2013-250000 2013-12-03
JP2013250000A JP2017027966A (ja) 2013-12-03 2013-12-03 薬液温度調整機構及び小型製造装置

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WO2015080081A1 true WO2015080081A1 (fr) 2015-06-04

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Citations (11)

* Cited by examiner, † Cited by third party
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JPH09270373A (ja) * 1996-01-29 1997-10-14 Dainippon Screen Mfg Co Ltd 処理液供給方法およびその装置
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