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WO2015051806A1 - Procédé de caractérisation de propriétés électriques - Google Patents

Procédé de caractérisation de propriétés électriques Download PDF

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Publication number
WO2015051806A1
WO2015051806A1 PCT/DK2014/050327 DK2014050327W WO2015051806A1 WO 2015051806 A1 WO2015051806 A1 WO 2015051806A1 DK 2014050327 W DK2014050327 W DK 2014050327W WO 2015051806 A1 WO2015051806 A1 WO 2015051806A1
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WO
WIPO (PCT)
Prior art keywords
sample
test signal
electrical test
electrical
thz
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Ceased
Application number
PCT/DK2014/050327
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English (en)
Inventor
Jonas Christian Due BURON
Peter Uhd Jepsen
Dirch Hjort Petersen
Peter Bøggild
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Danmarks Tekniske Universitet
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Danmarks Tekniske Universitet
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Publication of WO2015051806A1 publication Critical patent/WO2015051806A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
    • G01N21/3586—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation by Terahertz time domain spectroscopy [THz-TDS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means

Definitions

  • the present invention relates to a method for characterisation of electrical properties of surfaces. Such surfaces could include thin films on substrates, structures on a surface or below a surface.
  • the present invention relates to a method using polarization-resolved terahertz time-domain
  • THz-TDS spectroscopy
  • finFET is used to describe a non-planar, multi-gate transistor.
  • the distinguishing characteristic of the finFET is that the conducting channel is a "fin" wrapped by a thin gate dielectric layer and gate electrode material, which forms the body of the device.
  • the length of the fin (measured in the direction from source to drain) determines the effective channel length of the device. Therefore, methods for obtaining knowledge of electrical properties of surfaces comprising such structures are crucial.
  • samples is to be understood as the object being tested, which could be a test sample taken from a production line, an individually produced device to be tested, a part of a device, e.g. part of a semiconductor device or any other suitable entity to be tested.
  • the method may comprise a step of arranging the sample and the electrical test signal in an initial orientation relative to each other.
  • the method may comprise a step of applying the electrical test signal from the transmitter to the area of the sample where the polarisation of the electrical test signal is in an initial direction relative to the area.
  • the method may comprise a step of detecting a first response signal.
  • the method may comprise a step of arranging the sample and the electrical test signal in a second orientation so that the polarisation of the electrical test signal is in one or more orientations relative to the sample, different from the initial orientation.
  • the method may comprise a step of detecting a series of one or more response signals.
  • the method may comprise a step of determining an anisotropic electrical property of the area based on a combination of response signals.
  • the step of arranging the sample and the polarised electrical test signal so that the polarised electrical test signal is in one or more orientations relative to the sample, different from the initial orientation does not necessarily require physical movement of either component, but may merely be a question of changing electrical test signals in the transmitter so that a signal with a different
  • polarisation is transmitted thereby establishing a second orientation different from the first or initial orientation.
  • the polarisation of the electrical test signal may be achieved by filtering or a polarizer in the path of the signal and thus the signal need not be polarized from the point of origin.
  • a polarizing filter, a polarizing screen or a polarizer may be applied in the transmission path.
  • the transmitter may provide a polarized electrical test signal.
  • the electrical test signal may be a terahertz signal.
  • the electrical anisotropy may be at least partly due to a geometric structure comprising one or more conductive areas and/or due to a materials property of the sample body.
  • the geometric structure may comprise linearly arranged conductive structures in periodic or non-periodic arrangements of conductive elements.
  • the method is well suited for non-contact THz-TDS for characterisation of electrical conductance of an area of a thin-film or an array or similar of linear or substantially linear nanowire-like structures such as finFETs, an array of linear conductive elements (ALCE), shallow trench isolation (STI), etc.
  • the sample may include GaAs, InAs, InGaAs, Si, Ge, Graphene, SiGe, GeSn, InSb or a combination thereof and/or the sample comprises heterostructures from the group V and group III or even from group II-VI, such as ZnTe, ZnO, ZnSe, ZnS, in the periodic table of elements, and/or the sample comprises heterostructures from the group IV in the periodic table of elements, and/or the sample comprises heterostructures from the group II and group VI in the periodic table of elements and/or the area comprises finFETs, ALCE, STI, graphene nanoribbons, carbon nanotubes, or other linear or partially linear, high aspect ratio, nanowire-like or nanotube-like structures, as well as structures with laterally anisotropic geometry or other rotationally anisotropic structures.
  • group V and group III or even from group II-VI such as ZnTe, ZnO, ZnSe, ZnS, in the periodic table of elements
  • the sample
  • the structures need not be linear in the mathematical sense, some degree of disorder may be acceptable.
  • the sample may comprise buried structures.
  • the structures may be buried under one or more electrically insulating and/or electrically conducting and/or semiconducting layers.
  • the polarised electrical test signal may be linearly polarised. This is especially advantageous so that in the first, initial, orientation and second orientation the electrical test signals are polarised perpendicularly to each other. Other angles between the polarisations are possible also, the only requirement being that the angle is known. Using two such polarisations perpendicularly to each other provides better measurements and further enhances the accuracy of the method, and further allows two signals to be transmitted where the two signals provide maximum information on especially linearly arranged elements and/or structures.
  • the polarised electrical test signal may comprise a series of alternatingly polarized pulses, preferably the pulses are linearly polarized and the orientations are then alternated so that two consecutive pulses are polarized perpendicular to each other. Further, the pulses, or transmitter, may be orientated so that the pulses are alternatingly perpendicular and parallel to the direction of an array or lines in the area.
  • the test signal may comprise several combinations according to predefined schemes where pulses have a given polarisation and the sequence of pulses are analysed accordingly.
  • the polarised electrical test signal comprises circularly polarized pulses
  • the signal may comprise combinations of linearly polarized pulses and circularly polarized pulses.
  • the different polarisations may be transmitted simultaneously or temporally offset, periodically or aperiodically.
  • the polarised electrical test signal may in some instances be applied in a reflection mode or in a transmission mode relative to the sample. This means that in reflection mode the response signal is detected as a reflection from the surface whereon the incident signal is applied, whereas in transmission mode the response signal is measured from a different surface than the incident surface, such that the signal has been transmitted through the sample and detected from a different surface.
  • reflection mode the response signal is detected as a reflection from the surface whereon the incident signal is applied
  • transmission mode the response signal is measured from a different surface than the incident surface, such that the signal has been transmitted through the sample and detected from a different surface.
  • a combination of reflective and transmittive detection may also be used.
  • the method is advantageous where the THz pulse waveform is a) polarised to be generally in parallel to the nanowire-like structures to obtain the maximal THz response of the structures and b) polarised to be generally perpendicular to the nanowire-like structures to obtain the minimum (reference) THz response of the 'background' at the same location/area.
  • the effective sheet conductance of the area/array/similar of linear or substantially linear nanowire-like structures may be evaluated by measuring the THz response for each polarisation.
  • the switching between the polarisation can optionally be made very quickly e.g. electrically by using dual polarization photoconductive antennas.
  • the method may utilise that the frequency contents of the electromagnetic test signal could cover the characteristic frequency range of the conductivity response of the sample.
  • the frequency range of the conductivity response is preferably in the range of 0.1 to 500 THz, such as below 200 THz, such as below 100 THz, such as in the range 0.1 to 5 THz and even around 500 THz. Specific frequencies may be chosen depending on the sample.
  • the polarised electrical test signal is an electromagnetic signal with frequencies in the terahertz range, such as in the range 0.1 to 500 THz, such as in the range 0.1 to 100 THz, such as in the range 0.1 to 10 THz, such as in the range 0.1 to 5 THz, or even in the range 0.3 to 3
  • the method may include using Fresnel coefficients for transmission and/or reflection at the boundaries in the sample for determining the characteristic electrical property of the area. Based on measurements of, or calculation of, the Fresnel coefficients it is possible for e.g. a computer device to calculate electrical properties of the sample. It is advantageous that the method may perform both a characteristic electrical property measurement and a reference measurement performed at the same position on the sample. The electrical property measurement and the reference measurement are two consecutive or successively following measurements. The two measurements may be said to be separated in time only. Keeping the signal source in the same position reduces risk of misalignment or erroneous
  • the method according to the first aspect may use for polarization- resolved terahertz time-domain spectroscopy (THz-TDS) for wafer-scale characterization of the electrical conductance of an array of linear (or partially linear) conductive elements, ALCE, such as semiconductors grown in confined shallow trench isolation (STI) patterns or nano-patterned semiconductor material, e.g. used for source-drain and/or channel material in semiconductor devices such as transistors.
  • THz-TDS polarization- resolved terahertz time-domain spectroscopy
  • the response signal may be recorded in a field-resolved manner.
  • THz-TDS this is typically done by sampling the electric field as a function of time by 1) electro-optic sampling, 2) photoconductive switching or 3) air biased coherent detection.
  • Other methods may be used to record the response.
  • a second aspect of the present invention relates to a computer program product, or a computer implemented method, adapted to cause a computer device to perform the steps of the method according to the first aspect.
  • the computer program product is thus adapted to enable a computer system comprising at least one computer having data storage means in connection with which to control a measuring apparatus when down- or uploaded (storing and retrieving data) into the computer system.
  • Such a computer program product may be provided on any kind of computer readable medium, programmed in ROM or EPROM memory chips or through a network.
  • the individual aspects of the present invention may each be combined with any of the other aspects.
  • Figure 1 is a schematic illustration of a finFET structure
  • Figure 2 is an image of an array of linear, conductive elements, ALCE, similar to that illustrated in Figure 5,
  • Figure 3 is a schematic illustration of steps of a method
  • FIG. 4 is a schematic illustration of schemes for THz-TDS
  • FIG. 5 is a schematic illustration of the ALCE structures on the sample used for testing the present method.
  • Figure 6 shown THz transmission images of differently oriented ALCE structures, showing polarization-dependent transmission effect.
  • CMOS transistors continue to shrink in size undesirable short-channel effects such as "off-state" leakage current, which increases the idle power required by the device, grow increasingly important.
  • undesirable short-channel effects such as "off-state" leakage current, which increases the idle power required by the device, grow increasingly important.
  • IC-manufacturers are transitioning from planar transistor designs to multigated 3D-transistors ; e.g. finFETs.
  • FIG. 1 schematically illustrates a finFET transistor 10.
  • the finFET 10 comprises a substrate 20.
  • a semiconductor transistor channel source 30 and drain 40 are connected via a gate dielectric 50 to a gate contact 60.
  • the assembly is positioned on the substrate 20.
  • Figure 2 shows a microscope image of an array of linear, conductive elements (ALCE) 60 arranged on a SOI substrate 70.
  • ACE linear, conductive elements
  • in-line electrical characterization of fabricated fin channel structures provides a big challenge. Inline electrical characterization is, however, a crucial point to ensure consistent performance of the finFET channel in terms of parameters such as conductance, mobility and scattering rates.
  • the method according to the present invention provides direct and quantitative, contactless measurement of the conductivity of an array of linear, or at least partially linear or rotationally anisotropic, conductive elements with dimensions similar to STI confined semiconductors, finFETs, and similar nanowire-like structures based on non-contact polarization-resolved THz-TDS.
  • Figure 3 schematically illustrates steps of a method 100 for characterisation of an anisotropic electrical property of an area of an electrically anisotropic sample using a polarised electrical test signal from a transmitter.
  • the method comprises a step of arranging 110 the sample and the polarised electrical test signal in an initial orientation relative to each other.
  • the method comprises a step of applying 120 the polarised electrical test signal from the transmitter to the area of the sample where the polarisation is in an initial direction relative to the area.
  • the method comprises a step of detecting 130 a first response signal.
  • the method comprises a step of arranging 140, or rearranging, the sample and the polarised electrical test signal so that the polarised electrical test signal is in one or more orientations relative to the sample, different from the initial orientation, but in the same location.
  • the method comprises a step 150 of detecting a series of one or more response signals.
  • the method comprises a step of determining 160 an anisotropic electrical property of the area based on a combination of response signals. With this method there is no need for rearranging the transmitter for performing a reference measurement at a different, known location.
  • the sheet conductance of thin films on substrates can be readily measured by non-contact THz-TDS.
  • the response of the thin film or nanostructured thin film is isolated from the response of the underlying substrate by measuring a so-called “sample” THz pulse waveform and a "reference" THz pulse waveform.
  • sample waveform includes the response from the thin film or (micro)/nano-structured thin film as well as that of the substrate, and the “reference” waveform includes the response from the substrate or an area of the substrate, with no or negligible coverage of thin film, nanostructured thin film or micro/nano-structures.
  • ⁇ is the frequency
  • mb ⁇ 3 ⁇ 4
  • Z 0 is the vacuum impedance.
  • a person skilled in the art is familiar with techniques for accounting for further transmissions and reflections related to substrate boundaries. Under certain conditions an effective medium theory may be utilized to extract the sheet conductance of micro and/or nano-structured thin films on substrates (e.g. wafer substrates), such as an ALCE test structure.
  • the "reference" waveforms at the same spatial location on the wafer.
  • the "sample” waveform can be recorded, since the response of the ALCE structure conductance is included.
  • the "reference” waveform can be recorded, since the response of the ALCE structure is suppressed due to a vanishing THz response in the
  • Figure 4 schematically illustrates schemes for obtaining sample and reference THz waveforms, Esam and Eref, in the case of (a) conventional THz-TDS and (b) polarization-resolved THz-TDS on an ALCE structure. It is particularly noted how the reference measurement may be performed in the same location as the sample measurement, thus speeding up the process of measuring the electrical property of the sample.
  • Figure 5 schematically illustrates ALCE test structures used for proof-of-principle measurements. 2 x 2 mm 2 areas covered by 10 pm long, 80 nm tall silicon structures of widths varying between 20 nm and 200 nm, which were
  • the four areas are, in terms of the figure, vertically aligned, could also be termed north-south, ALCE with constant pitch, vertically aligned ALCE with constant a real coverage, horizontally, or east-west, aligned ALCE with constant pitch and horizontally aligned ALCE with constant a real coverage.
  • the crosses are used for alignment purposes and the 4PP pad is used for reference measurement of material conductance.
  • an ALCE test structure such as depicted in Figure 5 was characterized by the proposed method .
  • Raster scanned THz-TDS images of the test structures were produced with horizontal polarization/E-field ( Figure 6(a)) and vertical
  • FIG. 6 schematically illustrates THz transmission images of the test structures outlined in Figure 5 produced by raster scanning wafer with test structures in the focus plane between THz emitter and THz detector.
  • the polarization was horizontal and in (b) the polarization was vertical.
  • the images demonstrate that the ALCE parallel to the THz polarization/E-field gives rise to a THz response. With the THz polarization perpendicular to the ALCE, the sample structure is
  • the THz images in Figure 6 demonstrate that linear conducting elements oriented parallel to the polarization of the THz radiation show a pronounced THz response due to the movement of free carriers, resulting in a reduced THz transmission. Contrary, an ALCE oriented perpendicular to the polarization of the THz radiation appears transparent, since the THz response of the free carriers is suppressed due to the anisotropic geometry of the individual elements. The effective sheet conductance of the ALCE thin film can thus be evaluated by measuring the THz response to two orthogonal polarizations.
  • ref perpendicular f is then directly related to the sheet conductivity, ⁇ ⁇ (c ) , of the thin film or effective sheet conductance of the nanostructured thin film .
  • This relation is given by the following expressions for the cases of transmission and reflection at an interface of a substrate covered by a conductive thin film :
  • ⁇ is the frequency
  • n nb ( ⁇ 3 ⁇ 4;) is the refractive index of the substrate
  • Zo is the vacuum impedance.
  • a person skilled in the art is familiar with techniques for accounting for further transmissions and reflections related to substrate boundaries. Under certain conditions an effective medium theory may be utilized to extract the sheet conductance of (micro)/nano-structured thin films on substrates (e.g. wafer substrates), such as an ALCE test structure.
  • the present method of terahertz time-domain spectroscopy characterization technique gives access to the frequency-dependent, complex conductivity of ALCE structures, potentially allowing direct characterization of carrier scattering rate, carrier mobility, carrier density, and hall mobility, the latter via application of external magnetic fields.
  • the sample may be arranged so that the electromagnetic test signal is
  • the response signal may be
  • the electromagnetic test signal may comprise a pulse or a sequence of pulses. In some instances, magnitude and frequency may be chosen based on prior knowledge of the sample. In some instances a sequence of pulses may comprise identical pulses. Alternatively pulses may be transmitted in a given pattern to obtain timely separated responses from the different pulses in the sequence. Further, the electromagnetic test signal may comprise a sequence of one or more polarized pulses. The pulses as described may be mixed according to a given scheme. Other suitable pulse types may be included. The electromagnetic test signal may comprise a sequence of alternating s- and p-linearly polarized pulses. The signal may comprise a set of pulses having similar polarisations combined with another set of pulses having a different polarisation.
  • the characteristic electrical property of the area may be determined by analysing a combination of one or more pulses in the response signal.
  • the sample may comprise one or more pn-junctions.
  • the physical properties may have an impact on the response signal.
  • the method is also useful for samples wherein the sample comprises at least a p+ type layer and an n+ type layer.
  • the layers may be separated by one or more other layers, such as spacer layers, buffer layers, additional p+ or n+ type layers or other suitable combinations.
  • the non-contact THz-TDS method is generally different from other optical non- contact characterization techniques because it directly probes the intraband electrical conductivity. This allows direct, quantitative measurement of electrical properties such as conductance, carrier density, carrier scattering rate and carrier mobility without potential disturbance from contact formation.
  • the test carried out by the inventors as described in the present specification was performed using a commercially available Picometrix T-ray 4000 fiber-coupled terahertz time-domain spectrometer.
  • the invention can be implemented by means of hardware, software, firmware or any combination of these.
  • the invention or some of the features thereof can also be implemented as software running on one or more data processors and/or digital signal processors.
  • the individual elements of an embodiment of the invention may be physically, functionally and logically implemented in any suitable way such as in a single unit, in a plurality of units or as part of separate functional units.
  • the invention may be implemented in a single unit, or be both physically and functionally distributed between different units and processors.

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Abstract

Procédés de caractérisation d'échantillons électriquement anisotropiques à l'aide de signaux de test terahertz ayant différentes orientations par rapport à l'échantillon.
PCT/DK2014/050327 2013-10-11 2014-10-13 Procédé de caractérisation de propriétés électriques Ceased WO2015051806A1 (fr)

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EP13188296.1 2013-10-11
EP13188296 2013-10-11

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106972075A (zh) * 2017-03-24 2017-07-21 成都佰思汇信科技有限责任公司 多层石墨烯光电传感器
CN119124225A (zh) * 2024-06-21 2024-12-13 江西师范大学 一种高灵敏度的多功能太赫兹超材料传感器

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US20100219343A1 (en) * 2006-01-17 2010-09-02 University Of Northern British Columbia Methods and apparatus for determining fibre orientation
US20110267600A1 (en) * 2009-01-05 2011-11-03 Canon Kabushiki Kaisha Examining apparatus
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US6100703A (en) * 1998-07-08 2000-08-08 Yissum Research Development Company Of The University Of Jerusalum Polarization-sensitive near-field microwave microscope
US20100219343A1 (en) * 2006-01-17 2010-09-02 University Of Northern British Columbia Methods and apparatus for determining fibre orientation
US20110267600A1 (en) * 2009-01-05 2011-11-03 Canon Kabushiki Kaisha Examining apparatus
DE102011104708A1 (de) * 2011-06-06 2012-12-06 Automation Dr. Nix Gmbh & Co. Kg Verfahren und Vorrichtung zur Bestimmung von Material-Eigenschaften einer Substrat-Probe im Tera-Hertz-Frequenzspektrum

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JEON TAE-IN ET AL: "Terahertz conductivity of anisotropic single walled carbon nanotube films", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS, US, vol. 80, no. 18, 6 May 2002 (2002-05-06), pages 3403 - 3405, XP012030792, ISSN: 0003-6951, DOI: 10.1063/1.1476713 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106972075A (zh) * 2017-03-24 2017-07-21 成都佰思汇信科技有限责任公司 多层石墨烯光电传感器
CN119124225A (zh) * 2024-06-21 2024-12-13 江西师范大学 一种高灵敏度的多功能太赫兹超材料传感器

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