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WO2015044122A1 - Procédé de fabrication d'une cellule solaire photovoltaïque comprenant une hétérojonction et une zone dopée par diffusion sur deux surfaces différentes - Google Patents

Procédé de fabrication d'une cellule solaire photovoltaïque comprenant une hétérojonction et une zone dopée par diffusion sur deux surfaces différentes Download PDF

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Publication number
WO2015044122A1
WO2015044122A1 PCT/EP2014/070210 EP2014070210W WO2015044122A1 WO 2015044122 A1 WO2015044122 A1 WO 2015044122A1 EP 2014070210 W EP2014070210 W EP 2014070210W WO 2015044122 A1 WO2015044122 A1 WO 2015044122A1
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Prior art keywords
layer
semiconductor substrate
heterojunction
doping
diffusion
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PCT/EP2014/070210
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German (de)
English (en)
Inventor
Frank Feldmann
Martin Hermle
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Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
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Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/129—Passivating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • a photovoltaic solar cell is a planar semiconductor component in which charge carrier pairs are generated by absorption of incident electromagnetic radiation and subsequently separated at a pn junction, so that between at least two electrical contact points of the solar cell, a potential is created and electrical power can be tapped. Transition can be realized in that a corresponding emitter region is formed in a semiconductor substrate with a base doping by means of diffusion of a dopant opposite to the base doping, so that a pn junction is formed between emitter region and base-doped region of the semiconductor substrate.
  • the emitter by applying one or more layers to a base substrate, in particular by applying an emitter layer of amorphous silicon on a base substrate consisting of monocrystalline silicon.
  • the emitter layer has an opposite doping type to the base, so that a pn junction is formed between the emitter and the base. Since the amorphous silicon layer of the emitter has a different band gap with respect to the crystalline silicon of the base, a so-called hetero-pn junction is formed, so that a so-called hetero-emitter is present.
  • a heterojunction is also formed, in this case a so-called "high-low junction.”
  • Such a heterojunction is used to form heterocontacts physical contact types are known: Typically, a metallic contact structure applied directly or indirectly to the Haibleiter- to be contacted area.
  • a metallic contact structure applied directly or indirectly to the Haibleiter- to be contacted area.
  • the formation of an ohmic contact and a Schottky contact is known.
  • Also known as a special formation of a hetero-contact MOS / MIS contacts are known.
  • a specific embodiment of MOS / MIS contacts is the following structure, substrate / tunnel oxide / doped poly-Si layer.
  • Such contact types are known in semiconductors and are described, for example, in Peter Dice, Physics of Solar Cells: From Principles to New Concepts. 2005, Weinheim: WHey-VCH. (HeteroContact: Chapter 6.6, p. 127ff; Schottky contact: Chapter 6.7.1, p. 131 f; MIS contact: Chapter 6.7.2, p.132) and Sze, SM, Semiconductor devices: Physics and Technology. 1985, New York: John Wiley & sons. (MOS contact: chapter 5.4, p.186; metal-semiconductor contact: chapter 5.1, p. 160ff.).
  • Heteroerges are classically referred to as transitions of materials of different bandgap.
  • heterocontacts can also be formed by arranging a tunnel layer between the semiconductor substrate and the heterojunction layer, for example as a substrate / tunnel oxide / silicon-containing layer or MIS contacts as described above.
  • the term "heterojunction" is used in this application in this broad sense, and the “hetero” property of the heterojunction can therefore be based on a different bandgap between the semiconductor substrate and the heterojunction layer and / or between the tunnel layer and the heterojunction layer.
  • heterojunction in this application encompasses both transitions with layers of different doping types, in particular for the formation of heteroemitters, as well as transitions with layers of the same doping types, in particular for the formation of heterocontacts.
  • homocontacts Analogous to the definition introduced with regard to the emitters, in the present case such contacts which are not heterocontacts are referred to as homocontacts.
  • a solar cell combining a hetero emitter with a homocontact for the base is known, for example, from US Pat. No. 7,199,395 B2.
  • the method according to the invention for producing a photovoltaic solar cell having at least one diffused doping region and at least one heterojunction comprises the following method steps: In a method step A, a semiconductor substrate with a base doping is provided.
  • a method step B at least one doping region is produced on a first side of the semiconductor substrate by diffusion of a dopant into the semiconductor substrate.
  • the doping region has a higher doping than the base doping and / or a doping type opposite to the base doping.
  • the doping region can thus be formed as a high doping region such as BSF.
  • the doping region may be formed as an emitter.
  • a heterojunction is produced on a second side of the semiconductor substrate opposite the first side. The heterojunction is formed with a doped heterojunction layer and a dielectric tunnel layer arranged indirectly or directly between the heterojunction layer and the semiconductor substrate.
  • step B by heating the solar cell, the doped heterojunction layer is simultaneously activated and the dopant is diffused into the doping region.
  • the activation in method step B is preferably carried out in a manner known per se, in particular heating of at least the semiconductor substrate in the area of the first and second side to at least 600 ° C., preferably for a period of at least 10 minutes, is advantageous. This corresponds to known parameters for activating such a heterojunction.
  • the dielectric tunnel layer may be doped with a dopant or formed intrinsically ⁇ undoped).
  • the dopant is provided in such a way that a doping layer containing the dopant is indirectly or preferably applied directly to the first side of the semiconductor substrate, so that upon heating the dopant from the doping layer into the dopant Semiconductor substrate, iffundiert.
  • the emitter is thus produced in a simple manner on only one side of the substrate, without unwanted codiffusion taking place in other regions of the semiconductor substrate and in particular on the second side of the semiconductor substrate, or at least such a codiffusion being considerably reduced.
  • a protective layer is applied indirectly or preferably directly to the heterojunction layer.
  • the heterojunction layer is thus protected by the protective layer in subsequent process steps.
  • Etching steps in particular for forming a texture in which the etching process, in particular the formation of a texture, occurs only on the first side (not protected by a protective layer) of the semiconductor layer or in a diffusion process in which the Sch As a diffusion-protective layer, the penetration of dopants into the heterojunction layer and thus a deterioration in the function of the heterojunction layer and, thus, an effect of reducing the effect of gyration are avoided.
  • the protective layer preferably comprises at least one layer of the group Si N x layer, SiCv layer.
  • the protective layer it is advantageous for the protective layer to be formed as a layer system comprising at least two partial layers, preferably with a first partial layer facing the semiconductor substrate as a silicon oxide layer, in particular an SiO x layer and one second, facing away from the semiconductor substrate sub-layer as a silicon nitride layer, in particular SiN x layer.
  • the protective layer can thus be designed in particular as an etching protective layer or as a diffusion-protective layer.
  • the protective layer comprising a plurality of partial layers.
  • a diffusion protection layer may be formed in particular as a silicon dioxide layer.
  • An etching protective layer may be formed in particular as a silicon nitride layer.
  • method step B comprises the following method steps:
  • the tunneling layer and the heterojunction layer are applied indirectly or preferably directly on the second side of the semiconductor substrate.
  • a diffusion layer protective layer is applied indirectly or preferably directly on the side of the heterojunction layer facing away from the semiconductor substrate, and in a method step B3, the doping region is generated on the first side by means of diffusion from the gas phase.
  • the heterojunction layer is protected by the diffusion protection layer, so that codiffusion in the heterojunction layer is avoided.
  • method step B comprises the following method steps:
  • a method step Ba the tunneling layer and the heterojunction layer are applied indirectly or preferably directly on the second side of the semiconductor substrate.
  • an etching protective layer is applied indirectly or preferably directly on the side of the heterojunction layer facing away from the semiconductor substrate, and in a method step Bc a texture is produced on the first side of the semiconductor substrate by means of etching, preferably by immersing the semiconductor substrate in an etching bath ,
  • a texture on the first side of the semiconductor substrate is thus produced in a costly and inexpensive manner, which is preferably formed in a conventional manner as an optical texture to increase the light output.
  • no formation of texture is desired on the second side, as this typically results in an increase in the surface recombination rate.
  • a two-sided texture is typically first created by complex process sequences, and then the second side is planarized. Such a process is not necessary in the previously described advantageous embodiment.
  • a combination of the two aforementioned advantageous embodiments is advantageous in that first a texture is produced in accordance with the method steps Ba, Bb and Bc described above, wherein in method step Bb the etching protective layer is additionally designed as a diffusion protective layer. Furthermore, the doping region is formed after method step Bc according to method step B3.
  • an advantageous solar line structure comprising texturing on the first side and an emitter produced by means of diffusion from the gas phase is formed in a particularly process-intensive and cost-effective manner.
  • such a solar cell thus represents a low-cost produced highly efficient solar cell, which has the advantageous elements of an optical texturing, a diffused doping region and an electrically very well passivated region on the second side by forming the heterojunction.
  • the doping region with the base doping type or with a doping type opposite to the base doping type to form an emitter.
  • the heterojunction as a heterocontact or as a hetero-emitter. Investigations by the applicant have shown that a particularly advantageous embodiment for forming a highly efficient solar cell by forming the doping region as an emitter and the heterojunction as heterocontact occurs.
  • the doping region is formed by diffusion from the gas phase, it is advantageous that that forms during the diffusion from the gas phase at the first side glass layer is removed in an etching step such that deleted during the etching step, both the GLASS ', as also the protective layer described above is removed.
  • the resulting glass layer is thus removed in a simple manner as in prior art methods for generating a doping region from the gas phase and this cost simultaneously removed a previously applied protective layer in particular to prevent a codiffusion in the heterojunction layer.
  • the simultaneous removal of glass layer and protective layer is preferably carried out by hydrofluoric acids.
  • hydrogen is introduced into the heterojunction layer and / or at the interface between the tunnel layer and the semiconductor substrate in a method step C.
  • the electrical quality is increased in particular by further lowering the surface recombination speed.
  • the hydrogen is introduced here by means of RPHP, as described, for example, in S. Lindekugei, et al. , "Plasma hydrogen passivation for crystalline silicon thin-films," in Proceedings of the 23rd European Solar Photovoltaic Solar Energy Conference, Valencia, Spain, 2008, p. 2232-5.
  • the hydrogen can be introduced by attaching a hydrogen-containing layer indirectly or preferably directly to the heteroaromatic layer. is applied. In this case, the process heat already causes the diffusion of hydrogen during the application of the layer.
  • further hydrogen is diffused by subsequently hydrogen by means of heating, preferably to at least 350 ° C, additionally introduced.
  • the aforementioned hydrogen-containing layer is formed as a microcrystalline silicon layer, in particular as hydrogenated microcrystalline silicon carbide (c-SiC: H).
  • c-SiC hydrogenated microcrystalline silicon carbide
  • the hydrogen-containing layer may be formed as a silicon nitride layer, in particular a hydrogenated silicon nitride layer. In this case, heating to a temperature in the range 700 ° C. to 900 ° C.
  • a metallic contacting layer is indirectly or preferably applied directly to the heterojunction layer on the side facing away from the semi-conductor substrate. In this case, it is particularly advantageous that a method step C is carried out as described above and then the metallic contacting slide is applied.
  • the solar cell according to the invention combines a diffused region with a heterojunction.
  • the diffused region may be formed as FSF or BSF and the emitter as a hetero emitter.
  • the emitter may be formed as a diffused homo emitter and a FSF or BSF as a heterojunction.
  • it harbors the basis of the solar cell. form doped or p-doped form.
  • a diffused, p-doped emitter in particular with boron as dopant, and a backside n-heterocontact or
  • n-doped, diffused emitter in particular with phosphorus as a dopant and a rear p-heterocontact or
  • Figures 1 to 5 are schematic representations of an embodiment of a method according to the invention.
  • FIGS. 1 to 5 schematically show the production process of a solar cell according to an exemplary embodiment of the method according to the invention.
  • the schematic representations are not to scale.
  • the same reference numerals in Figures 1 to 5 denote the same or equivalent elements.
  • FIG. 1 shows a process stage in which a semiconitor substrate 1 designed as a silicon wafer is provided ⁇ method step A), which has an n-type base doping.
  • a tunnel layer a designed as a silicon dioxide layer and a heterojunction layer b formed as a silicon carbide (SiC) layer were applied directly to a second side of the semiconductor substrate 1 (shown in the figures below). This therefore corresponds to method step B1 according to claim 5 and method step Ba according to claim 6.
  • the silicon oxide layer can also be applied by means of one of the methods PECVD, LPCVD, APCVD, thermal oxidation, atomic layer deposition or dry oxidation with UV emitter.
  • the SiC Layer may also by means of one of the process PECVD (Plasma Enhanced Chemical Vapor Deposition), APCVD (Atmospheric Pressure Chemical Vapor Deposition), LPCVD (Low Pressure Chemical Vapor Deposition), HW-CVD (Hot W 'tre Chemical Vapor Deposition) or sputtering are applied ,
  • PECVD Pullasma Enhanced Chemical Vapor Deposition
  • APCVD Almospheric Pressure Chemical Vapor Deposition
  • LPCVD Low Pressure Chemical Vapor Deposition
  • HW-CVD Hot W 'tre Chemical Vapor Deposition
  • a protective layer c, d comprising two partial layers was applied.
  • the protective layer c, d comprises a diffusion protection layer c facing the heterojunction layer b, which is formed as a silicon dioxide layer. This therefore corresponds to method step B2 according to claim 5.
  • the heterojunction layer b facing away from the sub-layer of the protective layer c, d is formed as an etching protective layer d, which is realized as a silicon nitride layer. This therefore corresponds to method step Bb according to claim 6.
  • a doping region e was generated by diffusion from the gas phase of a dopant boron on the first side of the semiconductor substrate 1.
  • the doping region e has a p-doping, which is thus opposite to the base doping, so that the doping region e represents an emitter and a homo-pn junction is formed between the emitter and the base-doped region of the semiconductor substrate 1.
  • no boron entry into the heterojunction layer b and the semiconductor substrate 1 takes place on the second side, since the penetration of dopant is prevented on the reverse side due to the protective layer c, d, in particular the diffusion protection layer c.
  • a glass layer f is formed during diffusion from the gas phase on the first side of the semi-precious substrate 1, in this case boron glass.
  • the doped heterojunction layer can now be activated at the same time and a further dopant from the heterojunction layer can be diffused into the semiconductor substrate.
  • FIG. 4 shows a process state in which the boron glass F and the entire protective layer c, d were simultaneously removed by a wet-chemical process step by means of an HF-containing solution.
  • an antireflection layer g formed as a silicon nitride layer was subsequently applied on the front side in order to further increase the luminous efficacy of the solar cell.
  • the antireflection layer is formed as a layer system comprising an aluminum oxide layer and a silicon nitride layer.
  • the aluminum oxide layer is arranged on the side facing the silicon wafer in order to effect additional passivation of the boron emitter.
  • FIG. 5 shows a process stage in which in addition a full-area backside metallization h and in a manner known per se metallic contacting gratings h 'were applied, the front metalizing structures h' being electrically connected to the emitter.
  • the solar cell according to FIG. 5 thus has the advantage that a high-quality backside passivation and contacting by forming the passivating heterocontact on the rear side and the additional doping is present the substrate was textured on one side on the front side, without the need for a post-varianization process on the back side, and penetration of dopant at the back side of the solar cell and into the heterojunction layer was avoided in a simple manner during emitter diffusion from the gas phase.

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  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne un procédé de fabrication d'une cellule solaire photovoltaïque comprenant au moins une zone dopée par diffusion (e) et au moins une hétérojonction, comprenant les étapes suivantes : A) préparation d'un substrat semi-conducteur (1) pourvu d'un dopage de base ; B) réalisation d'au moins une zone dopée (e) sur une première face du substrat semi-conducteur par diffusion d'un agent dopant dans le substrat semi-conducteur, ladite zone dopée (e) possédant un dopage plus élevé que le dopage de base et/ou un dopage de type opposé à celui du dopage de base, et réalisation sur la deuxième face du substrat semi-conducteur (1) située à l'opposé de la première face d'une hétérojonction comprenant une couche d'hétérojonction (b) dopée et une couche tunnel diélectrique (a) disposée indirectement ou directement entre la couche d'hétérojonction (b) et le substrat semi-conducteur (1). L'invention est caractérisée en ce que, dans l'étape de procédé B), on dépose la couche tunnel (a) et la couche d'hétérojonction (b) avant la diffusion de la zone dopée (e) et en ce que, simultanément, on active la couche d'hétérojonction dopée et on fait diffuser l'agent dopant dans la zone dopée (e) en chauffant la cellule solaire dans l'étape de procédé B).
PCT/EP2014/070210 2013-09-27 2014-09-23 Procédé de fabrication d'une cellule solaire photovoltaïque comprenant une hétérojonction et une zone dopée par diffusion sur deux surfaces différentes Ceased WO2015044122A1 (fr)

Applications Claiming Priority (2)

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DE102013219564.8A DE102013219564A1 (de) 2013-09-27 2013-09-27 Verfahren zum Herstellen einer photovoltaischen Solarzelle mit einem Heteroübergang
DE102013219564.8 2013-09-27

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10749069B2 (en) 2014-11-04 2020-08-18 Lg Electronics Inc. Solar cell and method for manufacturing the same
US11133426B2 (en) 2014-11-28 2021-09-28 Lg Electronics Inc. Solar cell and method for manufacturing the same
US11329172B2 (en) 2013-04-03 2022-05-10 Lg Electronics Inc. Solar cell
US11462654B2 (en) 2015-06-30 2022-10-04 Lg Electronics Inc. Solar cell and method of manufacturing the same

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10693030B2 (en) 2018-01-15 2020-06-23 Industrial Technology Research Institute Solar cell
DE102018105450A1 (de) 2018-03-09 2019-09-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung einer photovoltaischen Solarzelle und photovoltaische Solarzelle
DE102018123397A1 (de) 2018-09-24 2020-03-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung einer photovoltaischen Solarzelle mit einem Heteroübergang und einem eindiffundiertem Emitterbereich
DE102018124565A1 (de) 2018-10-05 2020-04-09 Meyer Burger (Germany) Gmbh Solarzellen-Beschichtungsanlage
DE102020132245A1 (de) 2020-12-04 2022-06-09 EnPV GmbH Rückseitenkontaktierte Solarzelle und Herstellung einer solchen
DE102022129955A1 (de) 2022-11-11 2024-05-16 EnPV GmbH Rückseitenkontaktierte Solarzelle mit Aluminiummetallisierung und Herstellungsverfahren
DE102023130440B3 (de) 2023-11-03 2025-03-06 EnPV GmbH Rückseitenkontaktierte Solarzelle und Verfahren zum Herstellen einer rückseitenkontaktierten Solarzelle

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7199395B2 (en) 2003-09-24 2007-04-03 Sanyo Electric Co., Ltd. Photovoltaic cell and method of fabricating the same
US20090308438A1 (en) * 2008-06-12 2009-12-17 Denis De Ceuster Trench Process and Structure for Backside Contact Solar Cells with Polysilicon Doped Regions
US20100051085A1 (en) * 2008-08-27 2010-03-04 Weidman Timothy W Back contact solar cell modules
US20100139764A1 (en) * 2008-12-04 2010-06-10 Smith David D Backside Contact Solar Cell With Formed Polysilicon Doped Regions
US20120222731A1 (en) * 2011-03-02 2012-09-06 National Tsing Hua University Heterojunction Solar Cell Having Amorphous Silicon Layer
US20130240031A1 (en) * 2012-03-19 2013-09-19 Lg Electronics Inc. Solar cell

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8222516B2 (en) * 2008-02-20 2012-07-17 Sunpower Corporation Front contact solar cell with formed emitter

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7199395B2 (en) 2003-09-24 2007-04-03 Sanyo Electric Co., Ltd. Photovoltaic cell and method of fabricating the same
US20090308438A1 (en) * 2008-06-12 2009-12-17 Denis De Ceuster Trench Process and Structure for Backside Contact Solar Cells with Polysilicon Doped Regions
US20100051085A1 (en) * 2008-08-27 2010-03-04 Weidman Timothy W Back contact solar cell modules
US20100139764A1 (en) * 2008-12-04 2010-06-10 Smith David D Backside Contact Solar Cell With Formed Polysilicon Doped Regions
US20120222731A1 (en) * 2011-03-02 2012-09-06 National Tsing Hua University Heterojunction Solar Cell Having Amorphous Silicon Layer
US20130240031A1 (en) * 2012-03-19 2013-09-19 Lg Electronics Inc. Solar cell

Non-Patent Citations (14)

* Cited by examiner, † Cited by third party
Title
"Metall-Halbleiterkontakt", pages: 160FF
"MOS-Kontakt", pages: 186
ABERLE A G: "Overview on SiN surface passivation of crystalline silicon solar cells", SOLAR ENERGY MATERIALS AND SOLAR CELLS, vol. 65, no. 1-4, 28 September 2000 (2000-09-28), pages 239 - 248, XP004217124, ISSN: 0927-0248, DOI: 10.1016/S0927-0248(00)00099-4 *
BIVOUR M ET AL: "n-type silicon solar cells with amorphous/crystalline silicon heterojunction rear emitter", 35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 20-25 JUNE 2010, HONOLULU, HI, USA, IEEE, PISCATAWAY, NJ, USA, 20 June 2010 (2010-06-20), pages 1304 - 1308, XP031784058, ISBN: 978-1-4244-5890-5 *
DAMIAN PYSCH ET AL: "Amorphous silicon carbide heterojunction solar cells on-type substrates", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 519, no. 8, 8 December 2010 (2010-12-08), pages 2550 - 2554, XP028132133, ISSN: 0040-6090, [retrieved on 20101217], DOI: 10.1016/J.TSF.2010.12.028 *
GLUNZ S W ET AL: "Surface Passivation of Silicon Solar Cells using Amorphous Silicon Carbide Layers", CONFERENCE RECORD OF THE 2006 IEEE 4TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, 1 May 2006 (2006-05-01), pages 1016 - 1019, XP031007479, ISBN: 978-1-4244-0016-4 *
JANZ S ET AL: "Passivation mechanisms of amorphous SixC(1-x) layers on highly doped and textured Si surfaces", PROCEEDINGS OF THE 22ND EUROPEAN PHOTOVOLTAIC SOLAR ENERGY CONFERENCE, EU PVSEC, 3 September 2007 (2007-09-03), pages 1454 - 1457, XP040513271, ISBN: 978-3-936338-22-5 *
KANEIWA M ET AL: "CELL STRUCTURES WITH LOW-HIGH HETEROJUNCTION OF C-SI AND MUC-SI:H UNDER REAR CONTACT FOR IMPROVEMENT OF EFFICIENCIES", SOLAR ENERGY MATERIALS AND SOLAR CELLS, vol. 34, no. 1 - 04, 1 September 1994 (1994-09-01), pages 183 - 191, XP000728735, ISSN: 0927-0248, DOI: 10.1016/0927-0248(94)90039-6 *
KORTE L ET AL: "Advances in a-Si:H/c-Si heterojunction solar cell fabrication and characterization", SOLAR ENERGY MATERIALS AND SOLAR CELLS, vol. 93, no. 6-7, 11 December 2008 (2008-12-11), pages 905 - 910, XP026093533, ISSN: 0927-0248, [retrieved on 20081211], DOI: 10.1016/J.SOLMAT.2008.10.020 *
MAN-CHI HUANG ET AL: "The effect of H2 treatment on heterojunction with intrinsic thin layer (HIT) solar cell perfromance using 40.68MHz VHF-PECVD system", PROCEEDINGS OF THE 37TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, 19 June 2011 (2011-06-19), pages 3001 - 3004, XP032168318, ISBN: 978-1-4244-9966-3, DOI: 10.1109/PVSC.2011.6186575 *
MARTIN BIVOUR ET AL: "Analysis of the Diffused Front Surface Field of n-type Silicon Solar Cells with a-Si/c-Si Heterojunction Rear Emitter", ENERGY PROCEDIA, vol. 8, 12 August 2011 (2011-08-12), pages 185 - 192, XP028263064, ISSN: 1876-6102, [retrieved on 20110812], DOI: 10.1016/J.EGYPRO.2011.06.122 *
PETER WÜRFEL: "Physics of Solar Cells: From Principles to New Concepts", 2005, WILEY-VCH, pages: 127FF
S. LINDEKUGEL ET AL.: "Plasma hydrogen passivation for crystalline silicon thin-films", PROCEEDINGS OF THE 23RD EUROPEAN PHOTOVOLTAIC SOLAR ENERGY CONFERENCE, 2008, pages 2232 - 5
SZE, S. M.: "Semiconductor devices: Physics and Technology", 1985, JOHN WILEY & SONS

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11329172B2 (en) 2013-04-03 2022-05-10 Lg Electronics Inc. Solar cell
US11456391B2 (en) 2013-04-03 2022-09-27 Lg Electronics Inc. Solar cell
US11482629B2 (en) 2013-04-03 2022-10-25 Lg Electronics Inc. Solar cell
US10749069B2 (en) 2014-11-04 2020-08-18 Lg Electronics Inc. Solar cell and method for manufacturing the same
US11133426B2 (en) 2014-11-28 2021-09-28 Lg Electronics Inc. Solar cell and method for manufacturing the same
US11239379B2 (en) 2014-11-28 2022-02-01 Lg Electronics Inc. Solar cell and method for manufacturing the same
US11462654B2 (en) 2015-06-30 2022-10-04 Lg Electronics Inc. Solar cell and method of manufacturing the same

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