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WO2014209154A1 - Élément électroluminescent organique ayant la couche de rayonnement contenant des points quantiques à une surface modifiée - Google Patents

Élément électroluminescent organique ayant la couche de rayonnement contenant des points quantiques à une surface modifiée Download PDF

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Publication number
WO2014209154A1
WO2014209154A1 PCT/RU2013/000546 RU2013000546W WO2014209154A1 WO 2014209154 A1 WO2014209154 A1 WO 2014209154A1 RU 2013000546 W RU2013000546 W RU 2013000546W WO 2014209154 A1 WO2014209154 A1 WO 2014209154A1
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WIPO (PCT)
Prior art keywords
quantum dots
semiconductor
electroluminescent layer
layer
layer according
Prior art date
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Ceased
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PCT/RU2013/000546
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English (en)
Inventor
Alexey Grigorjevich VITUKHNOVSKII
Andrey Alexandrovich VASHENKO
Denis Nikolaevich BYCHKOVSKII
Alexey Ruslanovich KOVSH
Vladislav Evgenjevich BOUGROV
Maxim Anatoljevich ODNOBLYUDOV
Petr Nikolaevich TANANAEV
Maxim Sergeevich Wakstein
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OBSCHESTVO S OGRANICHENNOI OTVETSTVENNOSTYU "NAUCHNO-TEKHNOLOGICHESKIY ISPYTATEL'NYJ CENTR "NANOTEH-DUBNA" (OOO "NTIC "NANOTEH-DUBNA")
OPTOGAN - ORGANIC LIGHTNING SOLUTION (OPTOGAN-OSR LLC) LLC
Original Assignee
OBSCHESTVO S OGRANICHENNOI OTVETSTVENNOSTYU "NAUCHNO-TEKHNOLOGICHESKIY ISPYTATEL'NYJ CENTR "NANOTEH-DUBNA" (OOO "NTIC "NANOTEH-DUBNA")
OPTOGAN - ORGANIC LIGHTNING SOLUTION (OPTOGAN-OSR LLC) LLC
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Application filed by OBSCHESTVO S OGRANICHENNOI OTVETSTVENNOSTYU "NAUCHNO-TEKHNOLOGICHESKIY ISPYTATEL'NYJ CENTR "NANOTEH-DUBNA" (OOO "NTIC "NANOTEH-DUBNA"), OPTOGAN - ORGANIC LIGHTNING SOLUTION (OPTOGAN-OSR LLC) LLC filed Critical OBSCHESTVO S OGRANICHENNOI OTVETSTVENNOSTYU "NAUCHNO-TEKHNOLOGICHESKIY ISPYTATEL'NYJ CENTR "NANOTEH-DUBNA" (OOO "NTIC "NANOTEH-DUBNA")
Priority to PCT/RU2013/000546 priority Critical patent/WO2014209154A1/fr
Publication of WO2014209154A1 publication Critical patent/WO2014209154A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/58—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing copper, silver or gold
    • C09K11/582—Chalcogenides
    • C09K11/584—Chalcogenides with zinc or cadmium
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/70—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing phosphorus
    • C09K11/701—Chalcogenides
    • C09K11/703—Chalcogenides with zinc or cadmium
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C09K11/881—Chalcogenides
    • C09K11/883—Chalcogenides with zinc or cadmium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals

Definitions

  • This invention relates to optoelectronic devices, namely, to optoelectronic devices based on organic light- emitting diodes, which include the active electroluminescent layer containing quantum dots with the modified surface.
  • OLED organic light-emitting diodes
  • OLED organic light-emitting diodes
  • ITO indium tin oxide
  • polymer or low molecular organic transport layer with a hole conductivity active luminescent layer based on organic compounds
  • organic transport layer with electron conductivity metal cathode.
  • organic light-emitting diodes with a more complex configuration of elements are known, where between the anode and transport layer with hole conductivity a layer of holes injection is located, and between transport layer with hole conductivity and active luminescent layer an electron blocking layer or a hole blocking layer is located, at that between transport layer with electron conductivity and active electroluminescent layer the electron blocking layer or hole blocking layer is located.
  • the colloidal quantum dots are obtained through high temperature synthesis in the inert atmosphere in a non-coordinating high-boiling organic solvent, using a different sets of surfactants, which provide the controlled growth of nanocrystals .
  • the semiconductor nanocrystals are obtained, which consist of semiconductor nano-size core coated with one or more semiconductor shells, and an outer organic layer of adsorbed surface-active ligands oriented with their polar ends to the surface of quantum dot and with hydrophobic part to the nonpolar solvent side, in which they dispersed (Fig. 1) .
  • the light-emitting devices are known (US 2009/0039764 Al, H01J 1/63, 12.02.2009; US 2010/0109521 Al, H01J 1/62, 06.05.2010), in which instead of organic phosphors the quantum dots are used as a light-emitting layer.
  • organic light-emitting diode systems it is necessary to apply the dispersion of quantum dots in the solvent to organic conductive layers with subsequent formation of active electroluminescent layer.
  • active electroluminescent layer a problem occurs concerned with the breach of integrity of previous layers, while applying the layer of quantum dots and subsequent layers in situations, where during applying the layer of quantum dots or subsequent layers the solvent is used capable to dissolve substances of previous layer.
  • trioctylphosphine oxide and trioctylphosphine (TOPO and TOP) this barrier is not very large (due to the relatively short length of these molecules) then formation of one more insulating organic layer over them (while modifying the surface of quantum dots by amphiphilic ligand) results in a substantial increase of energy barrier for the penetration of charge carriers into the semiconductor structure, as well as reducing the efficiency of resonant energy transfer to the quantum dots.
  • the efficiency of such electroluminescent systems remains quite low, and control voltages required for "turning-on" a device are too high, which ultimately leads to rapid degradation of organic layers and outage of the device as a whole.
  • the purpose of this invention is creation of active electroluminescent layer of optoelectronic device that includes the layer of quantum dots, deposited from the polar solvent, in which they can be dispersed through modifying their surface by amphiphilic conductive polymer, at that the layer of quantum dots should be positioned between the layers of organic polymers possessing high solubility in nonpolar and low solubility in polar solvents.
  • the technical result is the elimination of integrity breach of previous layers, while applying the layer of quantum dots and subsequent layers in situations, where during applying the layer of quantum dots or subsequent layers a solvent capable of dissolving the substances of previous layer is used.
  • the active electroluminescent layer of optoelectronic device includes the first organic hole transport layer soluble in the nonpolar solvent, second organic electron transport layer soluble in a nonpolar solvent, between which the layer of semiconductor quantum dots is located; those dots are applied from solution in the polar solvent, at that the surface of quantum dots was preliminary modified by amphiphilic conductive polymer and prior to modification the surface of semiconductor quantum dots was hydrophobic and contained the layer of surfactant over its entire surface, which thickness was from 0.7 nm to 3 nm.
  • the semiconductor nanocrystals structure of "core/first semiconductor shell” or “core/first semiconductor shell/second semiconductor shell” type are usually used. Further in the text the following symbol for semiconductor nanocrystals is used: core/first semiconductor shell or core/first semiconductor shell/second semiconductor shell. For example, InP/ZnS or CdSe/CdS/ZnS.
  • Semiconductor materials for cores and shells as well as their thicknesses are selected so that the formed nanocrystals possess the minimum amount of defects, and are not exposed to aggressive environmental effect.
  • Semiconductor core is a semiconductor compound selected from the group: CdSe, ZnSe, CdZnSe, CdS, CdZnS, CdSSe, CdZnSSe, InP, GaP, InGaP, InZnP, InAs, InAsP, CdTe, ZnTe, CdZnTe, PbS, PbSe, CuInS 2 , CuInSe 2 , AgInS 2 , but not limited to the listed compounds.
  • First semiconductor shell is a semiconductor compound selected from the group: CdSe, ZnSe, CdZnSe, CdS, CdZnS, CdSSe, CdZnSSe, InP, GaP, InGaP, InZnP, InAs, InAsP, CdTe, ZnTe, CdZnTe, PbS, PbSe, CuInS 2 , AgInS 2 , but not limited to the listed compounds.
  • Second semiconductor shell is a semiconductor compound selected from the group: CdS, CdZnS, ZnS, but not limited to the listed compounds.
  • the polymer compounds with p-type conductivity and soluble in nonpolar solvent or weak polarity solvent can be used.
  • Such compounds may include poly-p- phenylenevinylene (MEH-PPV) , poly-3-hexylthiophene
  • P3HT ⁇ , ⁇ '-bis ( 3-methylphenyl ) -N, N ' -bis (phenyl) benzidine
  • PDOT-TMA poly ( 3, -ethylenedioxythiophene ) - tetramethacrylate
  • the polymer compounds with n-type conductivity and soluble in nonpolar solvents and insoluble in polar ones are used.
  • Such compounds may include tris(8- hydroxyquinolinato) aluminium (Alq3), 2 , 9-dimethyl-4 , 7- diphenyl-1, 10-phenanthroline (BCP) , 3- (biphenyl-4-yl) -5- (4-tretbutylphenyl)-4-phenyl-4H-[l,2,4]triazole (TAZ) .
  • toluene, chloroform, n-alkanes, such as, hexane or octane, or cycloalkanes, such as, cyclohexane are used as nonpolar solvents. It is also possible to use compounds with intermediate polarity, for example, propylene carbonate.
  • Water, alcohols, for example, isopropyl, or ethers, for example, diethyl are used as polar solvents. It should be noted that it is undesirable to use water and water-containing solvents with compounds sensitive to moisture in both organic layers.
  • amphiphilic conductive polymer the polyfluorene derivatives, including block copolymers of polyfluorene with hydrophilic polymers, for example, polyethylene glycol, polypropylene glycol, polyvinylpyrrolidone, etc. as well as statistical copolymers with fluorene derivatives, with hydrophilic substituents at position 9 were selected.
  • the fatty phosphines, fatty phosphine oxides, fatty amines or fatty carboxylic acids are used as surfactant.
  • Fig.l Schematic image of quantum dot before modification of its surface.
  • Fig. 2 Schematic image of quantum dot after modification of its surface in polar solvent.
  • Fig. 3 Scheme of device with a layer of modified quantum dots.
  • Fig.4 The current-voltage characteristics and current efficiency of the device based on modified quantum dots.
  • Fig. 1 schematically shows a quantum dot, which is a semiconductor nanocrystal consisting of a semiconductor core (pos. 1), coated with the first semiconductor shell (pos. 2) and the second semiconductor shell (pos. 3) as well as an outer organic layer of chemisorbed surface- active ligands giving layer thickness of 0.7-3 nm (pos. 4 ) oriented with polar area to the quantum dot surface, and with hydrophobic area to the side of nonpolar solvent, in which this quantum dot is dispersed.
  • a quantum dot which is a semiconductor nanocrystal consisting of a semiconductor core (pos. 1), coated with the first semiconductor shell (pos. 2) and the second semiconductor shell (pos. 3) as well as an outer organic layer of chemisorbed surface- active ligands giving layer thickness of 0.7-3 nm (pos. 4 ) oriented with polar area to the quantum dot surface, and with hydrophobic area to the side of nonpolar solvent, in which this quantum dot is dispersed.
  • Example 1 Obtaining of quantum dots with CdSe/CdS/ZnS structure.
  • first semiconductor layer CdS and second semiconductor layer ZnS the standard SILAR procedure is used.
  • the known amount of semiconductor cores CdSe, defined based on exciton absorption is loaded into the flask, octadecene and hexadecylamine are added in a ratio of 1: 4 by weight, then the obtained mixture is heated, while being stirred under argon, and solutions of cadmium oleate and sulfur are sequentially injected, afterwards solutions of zinc oleate and sulfur are injected in volumes required for layered growth of first shell CdS and second shell ZnS.
  • the obtained quantum dots are isolated by the method described above; an aliquot of solution in toluene is evaporated to determine the mass concentration. Photoluminescence quantum yield equals to 90%.
  • Example 2 Obtaining the quantum dots with CuInS 2 /ZnS structure .
  • Copper iodide (I) and indium acetate (III) are mixed in the flask in a ratio of 1 to 5 by weight with addition of dodecanethiol, then the mixture is vacuumized and the temperature gradually increased to 240 °C. After one hour heating, the zinc myristate suspension in octadecene is added by portions in total weight twice more than used indium acetate.
  • the obtained quantum dots CuInS 2 / nS are isolated with butyl alcohol through re-dissolving the deposits of quantum dots in toluene. An aliquot of solution is evaporated to determine the mass concentration. Photoluminescence quantum yield equals to 80%.
  • a solution of indium acetate and myristic acid in octadecene is heated to 200 °C in inert atmosphere, and then is degassed for 1 hour at a temperature of 120 °C.
  • the solution is then reheated and precursor of phosphorous - tris (trimethylsilyl ) phosphine - in mixture with octadecene and hexadecylamine is injected.
  • precursor of phosphorous - tris (trimethylsilyl ) phosphine - in mixture with octadecene and hexadecylamine is injected.
  • the solution is heated to 240 °C, the solution of zinc oleate in octadecene is entered dropwise into it, and then the solution of selenium in trioctylphosphine is also added into it dropwise.
  • Photoluminescence quantum yield equals to 80%.
  • one of the methods described above is used, which is selected depending on specified objectives .
  • semiconductor quantum dots with the following structures: CdSe/CdS, CdSe/ZnS, ZnSe/ZnS, ZnSe/CdS, ZnSe/CdSe, CdSe/ZnSe, CdS/ZnS, ZnSe/CdSe/CdS, CdSe/CdS/ZnS , CdSe/ZnSe/ZnS, InP/ZnS, InP/ZnSe, InP/CdS/ZnS, CdTe/CdS, CdTe/CdSe/CdS/ZnS , CuInS 2 / nS, CuInSe 2 /ZnS, etc., as well as solid solutions with interpenetration of shells, in other words, any combinations of semiconductor materials described above, through using the corresponding precursors during the synthesis and change of synthesis temperature depending on reactivity of the specific chemical compound.
  • quantum dots with modified surface it is necessary to preliminarily synthesize an amphiphilic conductive polymer based on one of known techniques, e.g., based on the technique described below; afterwards it is necessary to prepare a solution with known concentration of quantum dots obtained at the first stage, - 1-10 ⁇ 10 16 pes. per ml (measured by optical means according to absorption per 350 nm) and used amphiphilic conductive polymer dissolved, for example, in toluene, at that tenfold excess of polymer relatively to the weight of quantum dots should be taken.
  • the solution should be evaporated on a rotary evaporator at 50 °C and re- dissolved in a volume of isopropyl alcohol or any other polar solvent listed above sufficient to obtain a concentration of quantum dots of about 1-10 ⁇ 10 16 .
  • Fig. 2 schematically shows a quantum dot obtained after modifying its surface in the polar solvent.
  • the quantum dot is a semiconductor core 1 covered with first semiconductor shell 2 and second semiconductor shell 3, whose surface is coated with an outer organic layer from adsorbed surface-active ligands 4, oriented with polar area to the surface of quantum dot, and with hydrophobic area to the side of amphiphilic conductive polymer.
  • the hydrophilic part of amphiphilic conductive polymer chain is designated by position 5
  • the hydrophobic part of amphiphilic polymer chain is designated by position 6 in Figure 2.
  • Amphiphilic conductive polymer suggested in this invention is a block copolymer of 9,9-dialkyl substituted polyfluorene with polyethylene glycol (PEG) .
  • This block copolymer is obtained by covalent binding of PEG hydrophilic block with hydrophobic block of polyfluorene through amide formation. Binding of carboxyl group and amino group (preliminarily entered as a substituent to the end of chains of polyfluorene and PEG, respectively) was carried out by means of activation with carbonyldiimidazole .
  • the molecular weight of polyfluorene and PEG blocks was about 10 3 g/mol each.
  • Fig. 3 schematically shows the construction of optoelectronic device, which is a multilayer structure, whose distinguishing feature is the use of quantum dots as an active electroluminescent layer, whose surface was previously modified by amphiphilic conductive polymer.
  • the device includes a transparent substrate (pos. 7) coated with a layer of transparent anode (pos. 8), to which the first polymer layer is applied (pos. 9), and which is, in fact, the transport layer with hole conductivity.
  • Preliminarily modified samples of quantum dots (pos. 10) were applied onto the first polymer layer 9 using centrifugation technology. Then the second polymer layer was applied (pos. 11), which is, in fact, transport layer with electron conductivity.
  • the device also includes a cathode (pos. 12).
  • the device operates as follows. When voltage is applied between electrodes, the movement and recombination of charge carriers occurs, which leads to the formation of singlet and triplet excitons in the area of +/- 20 nm between first organic conductive layer 9 and second organic conductive layer 11. With high probability the excitons formed in the layer of organic semiconductor through the process of resonance energy transfer give it to acceptors - quantum dots. Also in this area the direct injection of electrons and holes into quantum dots is taking place. Relaxation of energy obtained in that way, leads to the appearance of exciton in quantum dots, and on the levels of quantum dots lS e and lS h - electron and hole, respectively.
  • Example 4 Onto the glass with a layer of ITO in a dry box a drop of solution of PEDOT : TMA in propylene carbonate is poured and the centrifuge is switched on. The number of revolutions is regulated depending on the required thickness of layer. Then, during 20 minutes the film is getting dried at 110 °C and cooled to the indoor temperature. Then a solution of modified quantum dots, for example, CdSe/CdS/ZnS is dropped onto this film, centrifuged, and a layer with quantum dots of 15 nm thickness is obtained. The concentration of the quantum dots was selected so that per the unit of area of the layer with first organic conductive material the number of quantum dots was sufficient to form a monolayer.
  • modified quantum dots for example, CdSe/CdS/ZnS
  • a substrate with layers is transferred to the sputtering chamber Alq3, and a thermal spraying is carried out at pressure of 10 ⁇ 5 mbar. After sputtering of 30 nm Alq3 layer through magnetron sputtering, the aluminum layer is applied - the portion with area of 0.5 cm 2 .
  • an electric current was supplied to the manufactured device.
  • the electroluminescence spectra, the current-voltage characteristics, and device efficiency indicators were obtained.
  • the absorption spectra were measured by means of the spectrophotometer Perkin Elmer 45 in the spectral range of 300-800 nm, the spectra of photo-and electroluminescence - by means of the spectrometer Maya Pro 2000, Ocean Optics.
  • Organic conductive compounds can be applied from the gas phase through sputtering as well as from solutions.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Luminescent Compositions (AREA)

Abstract

L'invention porte sur des dispositifs optoélectroniques, à savoir, sur des dispositifs optoélectroniques basés sur des diodes électroluminescentes organiques, qui comprennent la couche électroluminescente active contenant des points quantiques avec la surface modifiée. Une couche électroluminescente active de dispositif optoélectronique comprend la première couche de transport de trous organique soluble dans un solvant non polaire, la seconde couche de transport d'électrons organique soluble dans un solvant non polaire, entre lesquelles la couche de points quantiques de semi-conducteur est située, déposée à partir d'une solution dans le solvant polaire. La surface de points quantiques était préalablement modifiée par un polymère conducteur amphiphile, cette surface de points quantiques de semi-conducteur avant modification était hydrophobe et contenait sur sa zone entière une couche du surfactant, dont l'épaisseur était de 0,7 nm à 3 nm.
PCT/RU2013/000546 2013-06-27 2013-06-27 Élément électroluminescent organique ayant la couche de rayonnement contenant des points quantiques à une surface modifiée Ceased WO2014209154A1 (fr)

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CN105428546A (zh) * 2016-01-20 2016-03-23 京东方科技集团股份有限公司 一种qled及其制备方法、显示装置及其制备方法
WO2016179920A1 (fr) * 2015-05-14 2016-11-17 中国科学院广州能源研究所 Boîte quantique fluorescente cuins2/in2s3/zns avec structure noyau-enveloppe double couche et procédé de préparation associé
CN106206965A (zh) * 2016-04-25 2016-12-07 苏州星烁纳米科技有限公司 一种量子点封装体及其制备方法
CN106981588A (zh) * 2017-05-02 2017-07-25 深圳市华星光电技术有限公司 一种有机发光器件及其制造方法
CN108845006A (zh) * 2018-03-01 2018-11-20 南昌航空大学 一种修饰电极材料硫铟化银的制备方法
WO2019084135A1 (fr) * 2017-10-25 2019-05-02 Nanosys, Inc. Points quantiques stables d'inp comportant un revêtement d'enveloppe épais et procédé pour leur production
WO2019092799A1 (fr) * 2017-11-08 2019-05-16 シャープ株式会社 Composition liquide, procédé de production d'élément de conversion photoélectrique et élément de conversion photoélectrique
EP3503236A1 (fr) * 2017-12-19 2019-06-26 Samsung Electronics Co., Ltd. Dispositif electroluminescent et dispositif d'affichage le comprenant
KR20190074211A (ko) * 2017-12-19 2019-06-27 삼성전자주식회사 전계 발광 소자 및 이를 포함하는 표시 장치
JP2019151513A (ja) * 2018-03-01 2019-09-12 株式会社アルバック コアシェル型量子ドット分散液の製造方法
JP2019165006A (ja) * 2018-03-19 2019-09-26 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 電界発光素子及びこれを含む表示装置
EP3597722A1 (fr) * 2018-07-18 2020-01-22 SABIC Global Technologies B.V. Couche d'utilisation de dispositif électroluminescent de points quantiques photoémetteurs encapsulés dans des nanovésicules polymères compartimentées
EP3607025A4 (fr) * 2017-04-12 2020-02-19 Zhejiang University Boîte quantique du groupe iii-v et procédé de fabrication associé
CN114242921A (zh) * 2021-12-09 2022-03-25 广东省科学院半导体研究所 一种发光场效应晶体管及其制备方法
US11737301B2 (en) 2018-03-19 2023-08-22 Samsung Electronics Co., Ltd. Electroluminescent device, and display device comprising thereof
US11859116B2 (en) 2020-09-28 2024-01-02 Samsung Display Co., Ltd. Quantum dot composition and method of manufacturing light-emitting device using the quantum dot composition

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CN108845006A (zh) * 2018-03-01 2018-11-20 南昌航空大学 一种修饰电极材料硫铟化银的制备方法
JP2019165006A (ja) * 2018-03-19 2019-09-26 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 電界発光素子及びこれを含む表示装置
US11737301B2 (en) 2018-03-19 2023-08-22 Samsung Electronics Co., Ltd. Electroluminescent device, and display device comprising thereof
JP7335710B2 (ja) 2018-03-19 2023-08-30 三星電子株式会社 電界発光素子及びこれを含む表示装置
EP3597722A1 (fr) * 2018-07-18 2020-01-22 SABIC Global Technologies B.V. Couche d'utilisation de dispositif électroluminescent de points quantiques photoémetteurs encapsulés dans des nanovésicules polymères compartimentées
US11859116B2 (en) 2020-09-28 2024-01-02 Samsung Display Co., Ltd. Quantum dot composition and method of manufacturing light-emitting device using the quantum dot composition
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