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WO2014200112A1 - Composition de silicium réactive, thermoplastique réactif, produit durci et dispositif semi-conducteur photoélectrique - Google Patents

Composition de silicium réactive, thermoplastique réactif, produit durci et dispositif semi-conducteur photoélectrique Download PDF

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Publication number
WO2014200112A1
WO2014200112A1 PCT/JP2014/065833 JP2014065833W WO2014200112A1 WO 2014200112 A1 WO2014200112 A1 WO 2014200112A1 JP 2014065833 W JP2014065833 W JP 2014065833W WO 2014200112 A1 WO2014200112 A1 WO 2014200112A1
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WIPO (PCT)
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group
mass
parts
cured product
sio
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Ceased
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PCT/JP2014/065833
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English (en)
Japanese (ja)
Inventor
亮介 山▲崎▼
吉武　誠
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Toray Specialty Materials KK
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Dow Corning Toray Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
    • C08K3/013—Fillers, pigments or reinforcing additives
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/34—Silicon-containing compounds
    • C08K3/36—Silica
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K7/00—Use of ingredients characterised by shape
    • C08K7/02—Fibres or whiskers
    • C08K7/04—Fibres or whiskers inorganic
    • C08K7/14—Glass
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means

Definitions

  • alkyl group for R 2 examples include a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, and a hexyl group.
  • a is a number indicating the ratio of siloxane units represented by the general formula: R 1 3 SiO 1/2 , and 0 ⁇ a ⁇ 0.30, preferably 0 ⁇ a ⁇ 0.25. It is a number that satisfies This is because the hardness at room temperature of the obtained cured product is good when a is not more than the upper limit of the above range.
  • the component (C) 20 to 70 mol% of the silicon atom-bonded all organic groups are phenyl groups. If the phenyl group content is not less than the lower limit of the above range, the resulting cured product has good mechanical strength at high temperatures, and if it is not more than the upper limit of the above range, This is because the mechanical strength is good.
  • the content of the component (G) is an amount that is in the range of 0.5 to 10.0 parts by mass with respect to 100 parts by mass in total of the components (A) to (D). In particular, the amount is preferably in the range of 1.0 to 8.0 parts by mass.
  • the content of the component (G) is not more than the upper limit of the above range, the resulting cured product has good heat resistance, and on the other hand, if it is not less than the lower limit of the above range, the resulting cured product has adhesiveness. This is because is good.
  • organopolysiloxanes include 1,3,5,7-tetramethyl-1,3,5,7-tetravinylcyclotetrasiloxane, tetrakis (dimethylvinylsiloxy) silane, methyltris (dimethylvinylsiloxy) silane, And phenyltris (dimethylvinylsiloxy) silane.
  • the content of the organopolysiloxane is preferably an amount within the range of 0 to 50 parts by mass with respect to 100 parts by mass of the component (A).
  • the cured product of the present invention is obtained by heating the reactive thermoplastic and performing the remaining hydrosilylation reaction, or the liquid reactive silicone composition without passing through the reactive plastic. Is obtained by heating and hydrosilylation reaction, and at 300 ° C., the solid or viscosity is 1,000,000 Pa ⁇ s or more.
  • the hardness of the cured product is not particularly limited, but the type D durometer hardness specified in JIS K 7215-1986 “Plastic Durometer Hardness Test Method” is preferably 60 or more, and more preferably 65 or more. It is preferable that it is 70 or more especially. This is because when the hardness is equal to or higher than the above lower limit, the dimensional stability of the cured product is improved, and the cured product is hardly deformed.

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Led Device Packages (AREA)

Abstract

La présente invention concerne : une composition de silicium réactive comprenant au moins (A) un organo polysiloxane comprenant un groupe alcényle représenté par une formule unitaire moyenne, (B) un organo polysiloxane comprenant un groupe alcényle représenté par une formule générale, (C) un organo polysiloxane comprenant un atome d'hydrogène lié à un silicium, (D) un catalyseur de réaction d'hydrosilylation, (E) un pigment blanc autre que le dioxyde de titane, et (F) de la silice sphérique, de la silice non sphérique, ou de la fibre de verre ; un thermoplastique réactif associé, un produit durci associé et un dispositif semi-conducteur photoélectrique comprenant le produit durci. La présente invention concerne : une composition de silicium réactive pouvant former un thermoplastique réactif ; un thermoplastique réactif qui se fluidise temporairement une fois chauffé, puis fournit un produit durci ; un produit durci qui présente une faible diminution de la résistance mécanique et une moindre décoloration due à la chaleur et à la lumière, une réflectivité optique élevée, en particulier dans une plage allant de 350 à 400 nm, et une excellente adhérence à un métal ; et un dispositif semi-conducteur photoélectrique qui présente une efficacité lumineuse élevée, une faible dégradation thermique et une faible photodégradation d'un matériau réfléchissant la lumière, et une excellente fiabilité.
PCT/JP2014/065833 2013-06-14 2014-06-10 Composition de silicium réactive, thermoplastique réactif, produit durci et dispositif semi-conducteur photoélectrique Ceased WO2014200112A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-125222 2013-06-14
JP2013125222 2013-06-14

Publications (1)

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WO2014200112A1 true WO2014200112A1 (fr) 2014-12-18

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Country Status (2)

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WO (1) WO2014200112A1 (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109306212A (zh) * 2017-07-28 2019-02-05 李新念 一种白色颜料的研制方法
JP2019072510A (ja) * 2015-06-30 2019-05-16 富士フイルム株式会社 音響波プローブ用組成物、これを用いた音響波プローブ用シリコーン樹脂、音響波プローブおよび超音波プローブならびに音響波測定装置、超音波診断装置、光音響波測定装置および超音波内視鏡
JPWO2023171512A1 (fr) * 2022-03-08 2023-09-14
WO2023190456A1 (fr) * 2022-03-31 2023-10-05 太陽ホールディングス株式会社 Produit durci, composition de résine photosensible, film sec et carte de circuit imprimé
US12163068B2 (en) 2020-05-07 2024-12-10 Dow Silicones Corporation Silicone hybrid pressure sensitive adhesive and methods for its preparation and use on uneven surfaces
US12454637B2 (en) 2020-05-07 2025-10-28 Dow Silicones Corporation Silicone hybrid pressure sensitive adhesive and methods for its preparation and use in protective films for (opto)electronic device fabrication

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018235491A1 (fr) * 2017-06-19 2018-12-27 東レ・ダウコーニング株式会社 Composition de silicone granuleuse durcissable, élément semi-conducteur la comprenant, et procédé de formation associé
JP7103974B2 (ja) * 2019-02-25 2022-07-20 信越化学工業株式会社 付加硬化型シリコーン組成物、光反射材用シリコーン硬化物、光反射材及び光半導体装置

Citations (5)

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WO2011078239A1 (fr) * 2009-12-22 2011-06-30 三菱化学株式会社 Matériau pour un corps en résine moulée utilisable dans un dispositif émetteur de lumière semi-conducteur
CN102627860A (zh) * 2012-04-10 2012-08-08 邵成芬 阻燃、高导热、耐高温、耐低温加成型有机硅橡胶及其制备方法
WO2013051600A1 (fr) * 2011-10-04 2013-04-11 株式会社カネカ Composition de résine durcissable, tablette de composition de résine durcissable, corps moulé, boîtier de semi-conducteurs, pièce semi-conductrice et diode électroluminescente
JP2013076050A (ja) * 2011-09-16 2013-04-25 Dow Corning Toray Co Ltd 硬化性シリコーン組成物、その硬化物、および光半導体装置
JP2013221075A (ja) * 2012-04-16 2013-10-28 Shin-Etsu Chemical Co Ltd Ｌｅｄのリフレクター用熱硬化性シリコーン樹脂組成物並びにこれを用いたｌｅｄ用リフレクター及び光半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011078239A1 (fr) * 2009-12-22 2011-06-30 三菱化学株式会社 Matériau pour un corps en résine moulée utilisable dans un dispositif émetteur de lumière semi-conducteur
JP2013076050A (ja) * 2011-09-16 2013-04-25 Dow Corning Toray Co Ltd 硬化性シリコーン組成物、その硬化物、および光半導体装置
WO2013051600A1 (fr) * 2011-10-04 2013-04-11 株式会社カネカ Composition de résine durcissable, tablette de composition de résine durcissable, corps moulé, boîtier de semi-conducteurs, pièce semi-conductrice et diode électroluminescente
CN102627860A (zh) * 2012-04-10 2012-08-08 邵成芬 阻燃、高导热、耐高温、耐低温加成型有机硅橡胶及其制备方法
JP2013221075A (ja) * 2012-04-16 2013-10-28 Shin-Etsu Chemical Co Ltd Ｌｅｄのリフレクター用熱硬化性シリコーン樹脂組成物並びにこれを用いたｌｅｄ用リフレクター及び光半導体装置

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019072510A (ja) * 2015-06-30 2019-05-16 富士フイルム株式会社 音響波プローブ用組成物、これを用いた音響波プローブ用シリコーン樹脂、音響波プローブおよび超音波プローブならびに音響波測定装置、超音波診断装置、光音響波測定装置および超音波内視鏡
US11524099B2 (en) 2015-06-30 2022-12-13 Fujifilm Corporation Composition for acoustic wave probe, silicone resin for acoustic wave probe using the same, acoustic wave probe, ultrasound probe, acoustic wave measurement apparatus, ultrasound diagnostic apparatus, photoacoustic wave measurement apparatus, and ultrasound endoscope
CN109306212A (zh) * 2017-07-28 2019-02-05 李新念 一种白色颜料的研制方法
US12163068B2 (en) 2020-05-07 2024-12-10 Dow Silicones Corporation Silicone hybrid pressure sensitive adhesive and methods for its preparation and use on uneven surfaces
US12454637B2 (en) 2020-05-07 2025-10-28 Dow Silicones Corporation Silicone hybrid pressure sensitive adhesive and methods for its preparation and use in protective films for (opto)electronic device fabrication
JPWO2023171512A1 (fr) * 2022-03-08 2023-09-14
WO2023171512A1 (fr) * 2022-03-08 2023-09-14 デンカ株式会社 Composition pour réflexion de lumière ultraviolette
WO2023190456A1 (fr) * 2022-03-31 2023-10-05 太陽ホールディングス株式会社 Produit durci, composition de résine photosensible, film sec et carte de circuit imprimé

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