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WO2014104001A1 - Modulateur spatial de lumière et son procédé de pilotage, et procédé et dispositif d'exposition - Google Patents

Modulateur spatial de lumière et son procédé de pilotage, et procédé et dispositif d'exposition Download PDF

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Publication number
WO2014104001A1
WO2014104001A1 PCT/JP2013/084456 JP2013084456W WO2014104001A1 WO 2014104001 A1 WO2014104001 A1 WO 2014104001A1 JP 2013084456 W JP2013084456 W JP 2013084456W WO 2014104001 A1 WO2014104001 A1 WO 2014104001A1
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WIPO (PCT)
Prior art keywords
spatial light
light modulator
reflective
reflecting surface
mirror
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Ceased
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PCT/JP2013/084456
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English (en)
Japanese (ja)
Inventor
大和　壮一
陽司 渡邉
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Nikon Corp
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Nikon Corp
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/06—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the phase of light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices

Definitions

  • the present invention relates to a spatial light modulator having a plurality of reflecting elements, a driving technique for the spatial light modulator, an exposure technique for exposing an object using the spatial light modulator, and a device manufacturing technique using the exposure technique.
  • an inclination angle is used instead of a mask (reticle).
  • a so-called maskless exposure apparatus that generates a variable pattern on the object plane of a projection optical system using a spatial light modulator having a variable array of micromirrors (for example, , See Patent Document 1).
  • the maskless method it is not necessary to prepare a mask for each of a plurality of types of devices and for each of a plurality of layers of a substrate, and an increase in manufacturing cost can be suppressed and each device can be manufactured efficiently.
  • the tilt angle is controlled so that the reflected light from a micro mirror does not enter the entrance pupil of the projection optical system.
  • a variable pattern of light and dark can be generated.
  • the aspect of the present invention provides a spatial light modulator that can generate a dark pattern or a pattern close to this, and a technique that uses this spatial light modulator. The purpose is to do.
  • each of the reflecting elements includes a fixed portion having a first reflecting surface, a movable portion having a second reflecting surface supported so as to be displaceable in a first direction across the surface of the fixing portion, and Is provided.
  • an exposure apparatus that illuminates a pattern with exposure light and exposes the substrate with the exposure light through the pattern and the projection optical system.
  • the exposure apparatus includes: a spatial light modulator according to an aspect of the present invention; and a position of the movable portion in the plurality of reflecting elements of the spatial light modulator in the first direction with respect to the fixed portion via the driving unit.
  • a control unit configured to individually set the plurality of reflective elements of the spatial light modulator with the exposure light, and guide the exposure light from the reflective element to the substrate through the projection optical system.
  • a method for driving a spatial light modulator according to an aspect of the present invention.
  • the position of the movable portion of the at least one first reflective element among the plurality of reflective elements of the spatial light modulator in the first direction relative to the fixed portion is determined from the first reflective element. Setting the position where the amount of reflected light is maximized, and the position of the movable part of at least one second reflective element of the spatial light modulator in the first direction relative to the fixed part of the movable part Is set to a position where the amount of reflected light from the second reflecting element is minimized.
  • an exposure method in which a pattern is illuminated with exposure light, and the substrate is exposed with the exposure light via the pattern and the projection optical system.
  • the plurality of reflective elements of the spatial light modulator according to the aspect of the present invention are arranged in the irradiation region of the exposure light, and at least one of the plurality of reflective elements of the spatial light modulator is arranged.
  • the reflection from the reflecting element according to the relative position in the first direction of the movable portion (second reflecting surface) with respect to the fixed portion (first reflecting surface) of the reflecting element changes. For this reason, the movement of the movable part is simple, and a dark pattern or a pattern close to this can be generated in units of reflective elements.
  • FIG. 1 (A) is a figure which shows the spatial light modulator which concerns on 1st Embodiment
  • B) is an expansion perspective view which shows a part of arrangement
  • (A) is sectional drawing which follows the BB line of FIG. 1 (B)
  • (B) is an expansion perspective view which shows the movable mirror part and elastic hinge part in FIG. 2 (A).
  • (A) is an enlarged plan view showing a plurality of mirror elements in FIG. 1 (B)
  • (B) is a diagram showing an example of the relationship between the ratio of the reflecting surface of the movable mirror portion and the reflectance of the mirror element. It is a flowchart which shows an example of the drive method of a spatial light modulator.
  • (A) is an enlarged sectional view showing two mirror elements of the spatial light modulator of the modification
  • (B) is an enlarged perspective view showing a plurality of mirror elements of the spatial light modulator of another modification.
  • It is a figure which shows schematic structure of the exposure apparatus which concerns on 2nd Embodiment.
  • (A) is a figure which shows an example of the pattern set with a spatial light modulator
  • (B) is a figure which shows an example of the pattern shifted to the Y direction.
  • (A) is a view showing a shot area of a wafer at the time of scanning exposure
  • (B) is a view showing a shot area of the wafer at the time of exposure by the step-and-repeat method.
  • FIG. 1A shows a spatial light modulator (SLM) 28 according to this embodiment.
  • the spatial light modulator 28 includes a main body 30 having an array region as a reflection surface on which a two-dimensional array of a plurality of mirror elements 34 that reflect incident light is arranged, and a plurality of mirror elements 34.
  • a modulation control unit 48 that individually controls the reflectivity and / or phase characteristics of the mirror element 34.
  • the X axis and the Y axis are taken along two directions orthogonal to each other, which are the arrangement directions of the plurality of mirror elements 34, and the direction perpendicular to the plane including the X axis and the Y axis (see FIG. A description will be given by taking the Z axis along the direction 1 (A).
  • pitches (periods) in the X direction and the Y direction are arranged inside a rectangular frame-shaped member 31 having a pair of sides parallel to the X direction and a pair of sides parallel to the Y direction.
  • a plurality of mirror elements 34 are arranged at px and py.
  • the plurality of mirror elements 34 are supported on the surface of a rectangular flat base member 32 (see FIG. 1B).
  • the region in which the plurality of mirror elements 34 are arranged is, for example, a rectangle elongated in the X direction, but the plurality of mirror elements 34 are substantially square. It may be arranged in a region.
  • the widths of the mirror elements 34 in the X direction and the Y direction are the same as the pitches px and py of the arrangement of the mirror elements 34 in the X direction and the Y direction, respectively.
  • the pitches px and py of the array are equal to each other.
  • the outer shape of the mirror element 34 is a square. Note that the pitches px and py may be different from each other. At this time, the outer shape of the mirror element 34 is rectangular.
  • Mirror elements 34 are respectively arranged.
  • the numbers I and J of the mirror elements 34 arranged in the X direction and the Y direction are, for example, several hundred to several tens of thousands, for example, several thousand.
  • the spatial light modulator 28 of the present embodiment is used as a variable pattern generation unit of, for example, a maskless type exposure apparatus
  • the plurality of mirror elements 34 are arranged in the X direction as shown in FIG. 1A as an example.
  • the number J of arrangement in the Y direction (the direction corresponding to the scanning direction of the substrate to be exposed) that is the short side direction of the mirror element 34 is several hundred to several thousand, and is arranged in the X direction.
  • the number I of sequences is several times to several tens times the number J of sequences.
  • the pitches px and py of the arrangement of the mirror elements 34 are each about 10 ⁇ m to 1 ⁇ m, for example.
  • the outer shape of the mirror element 34 is about 4 ⁇ m square.
  • the plurality of mirror elements 34 can be displaced relative to the base member 32 (see FIG. 1B) in the Z direction with respect to the fixed mirror portion 35 whose position in the Z direction does not change and the fixed mirror portion 35.
  • a driving unit (see FIG. 2A) that displaces the movable mirror unit 36 in the Z direction with respect to the fixed mirror unit 35.
  • FIG. 1 (B) shows an array of 4 rows ⁇ 4 columns of mirror elements 34 in FIG. 1 (A).
  • the fixed mirror portion 35 of the mirror element 34 is a quadrangle having a width px in the X direction and a width py in the Y direction, and a square opening 35b is provided at the center.
  • a reflection surface 35 a made of a metal film such as aluminum is formed on the entire surface of the fixed mirror portion 35.
  • the movable mirror portion 36 of the mirror element 34 has a reflection surface 36a made of a metal film such as aluminum on the entire surface.
  • the outer shape of the flat plate portion (flat plate portion) on which the reflecting surface 36 a of the movable mirror portion 36 is formed is a square that is slightly smaller than the opening 35 b of the fixed mirror portion 35.
  • the portion of the movable mirror portion 36 where the reflection surface 36a is formed is parallel to the normal direction of the surface of the fixed mirror portion 35 (in this embodiment, the normal direction of the reflection surface 35a) in the opening 35b of the fixed mirror portion 35. It is arranged to be displaceable in the Z direction.
  • the mirror element 34 as shown by the mirror element 34 at the position P (i, j), the mirror element 34 has the same reflecting surface 35a of the fixed mirror part 35 and the reflecting surface 36a of the movable mirror part 36 in the Z direction.
  • the reflecting surface 36a is lowered toward the base member 32 by a predetermined distance from the reflecting surface 35a ( The state may be selectively set to any one of the second states that may be raised.
  • the fixed mirror part 35 of the some mirror element 34 which adjoins is continuous, and the some fixed mirror part 35 forms the grid
  • the reflective surface 36a of the movable mirror unit 36 disposed in the fixed mirror unit 35 is a quadrangle having a width ex1 ( ⁇ ex2) in the X direction and a width ey1 ( ⁇ ey2) in the Y direction. is there. Note that the area of the gap between the opening of the reflecting surface 35a and the outer shape of the reflecting surface 36a is negligible, and the area of the reflecting surface 35a is SZ, the area of the reflecting surface 36a is SP, and the two reflecting surfaces 35a and 36a are If the total area of the combined reflecting surfaces is ST, these areas can be expressed as follows.
  • FIG. 2A is an enlarged sectional view showing the mirror element 34 at two adjacent positions P (i, j) and P (i, j + 1) in FIG. 1B (FIG. 1B). It is sectional drawing in alignment with the BB line
  • the elastic hinge portion 37 is a pair of flat plate-like portions arranged so as to sandwich the support portion 36b of the movable mirror portion 36 in the Y direction.
  • the elastic hinge portion 37 By the elastic hinge portion 37, the movable mirror portion 36 can be displaced so as to translate in the Z direction with respect to the fixed mirror portion 35.
  • the shape of the elastic hinge portion 37 is arbitrary.
  • a plurality of (for example, four) rod-like flexible members provided on the back surface of the movable mirror portion 36 without providing the support portion 36b.
  • the movable mirror portion 36 may be coupled to the fixed mirror portion 35 via a member corresponding to the portion 37.
  • the mirror element 34 is formed on the elastic hinge portion 37, for example, so as to face the thin film-like first electrode 38A formed on the surface of the base member 32 so as to face the elastic hinge portion 37, and the first electrode 38A.
  • a driving unit including the thin film-like second electrode 38B If a plurality of rod-like flexible members as described above are used instead of the elastic hinge portion 37, the second electrode 38B can be formed directly on the back surface of the movable mirror portion 36. It is.
  • the first electrodes 38A of the plurality of mirror elements 34 are commonly grounded in the modulation control unit 48 via the signal line SLE, and the second electrodes 38B of the two adjacent mirror elements 34 are modulated.
  • a variable drive voltage is applied from the control unit 48 via the signal lines SL1 and SL2, respectively. Also in the other mirror elements 34, the first electrode 38A is grounded, and variable drive voltages are applied to the second electrodes 38B independently of each other. Note that the second electrode 38B side may be grounded in common and a drive voltage may be individually applied to the first electrode 38A.
  • the base member 32 is composed of a flat substrate 32A made of, for example, silicon, and an insulating layer 32B made of silicon nitride (eg, Si 3 N 4 ) formed on the surface of the substrate 32A.
  • the fixed mirror part 35, the elastic hinge part 37, and the movable mirror part 36 provided on the surface of the base member 32 are integrally formed from, for example, polysilicon.
  • Signal lines SLE, SL1, and SL2 for applying a predetermined voltage between the electrodes 38A and 38B corresponding to each mirror element 34 (movable mirror portion 36) are provided on the surface of the base member 32 and the side surface of the fixed mirror portion 35. Are provided in a matrix.
  • the state in which the voltage is not applied between the electrodes 38A and 38B in the power-off state or the power-on state of the spatial light modulator 28 is the above-described first state, and at this time, the position P (i, As shown by the mirror element 34 of j), the reflecting surface 36a of the movable mirror portion 36 and the reflecting surface 35a of the fixed mirror portion 35 are at the same height.
  • a relative position in the Z direction of the movable mirror portion 36 with respect to the fixed mirror portion 35 in the first state is defined as a first position Z1.
  • a state in which a predetermined voltage is applied between the electrodes 38A and 38B when the power is turned on is the above-described second state.
  • the illumination light emitted from the illumination system (not shown) with respect to the mirror element 34 of the spatial light modulator 28 is substantially perpendicular to the reflecting surface 35a (and thus the reflecting surface 36a), that is, the movable mirror.
  • the light enters substantially parallel to the displacement direction (Z direction) of the portion 36.
  • the wavelength of the illumination light is ⁇
  • the interval ⁇ 1 is set as follows using an arbitrary integer n of 0 or more.
  • This interval ⁇ 1 is an interval at which the phase of this light changes by 180 degrees or ⁇ (rad) (or an integral multiple of ⁇ (rad) + 2 ⁇ ⁇ (rad)) when light of wavelength ⁇ reciprocates through this interval. It is. In the following, the phase unit (rad) is omitted. In the simplest example, the integer n is set to 0, and the interval ⁇ 1 is set to 4 / ⁇ . In consideration of the manufacturing error of the mirror element 34, the driving error of the movable mirror portion 36 in the Z direction, and the like, an error of about several percent with respect to the expression (2) is allowed for the interval ⁇ 1.
  • the plurality of mirror elements 34 having such a fine three-dimensional structure of the spatial light modulator 28 are, for example, described in Non-Patent Documents 1 and 2 cited in the background art, and are formed by a microelectromechanical system (MEMS). ) Technology. Since each mirror element 34 of the spatial light modulator 28 only needs to be set to the first state or the second state by translation, the movement of the movable mirror portion 36 of the mirror element 34 is simple, and the mirror element 34 The configuration of the drive unit can be simplified. For this reason, it is easy to reduce the size of the mirror elements 34 and increase the number of arrangement of the mirror elements 34.
  • MEMS microelectromechanical system
  • the illumination light ILA incident on the mirror element 34 in the first state at the position P (i, j) is the first light beam ILA1 incident on the reflecting surface 35a of the fixed mirror portion 35.
  • the second light beam ILA2 incident on the reflecting surface 36a of the movable mirror portion 36 can be divided.
  • the first light beam ILA1 is a cylindrical light beam (see FIG. 1B) that is incident on the entire surface of the ring-shaped reflection surface 35a surrounding the reflection surface 36a.
  • the reflection surfaces 35a and 36a have the same Z-direction position (Z position)
  • the reflected light from the reflection surface 35a of the first light beam ILA1 and the reflected light from the reflection surface 36a of the second light beam ILA2 are in the same phase, and the amount of reflected light from the mirror element 34 of the illumination light ILA is maximized.
  • the mirror element 34 in the first state is referred to as a bright pixel (hereinafter referred to as a bright pixel) BP having the maximum reflected light amount.
  • the illumination light ILB incident on the mirror element 34 in the second state at the position P (i, j + 1) also includes the first light beam ILB1 (cylindrical light beam) incident on the reflection surface 35a and the reflection surface. It can be divided into a second light beam ILB2 incident on 36a.
  • the Z positions of the reflecting surfaces 35a and 36a are different from each other by the interval ⁇ 1 in the above equation (2). In this case, if the phase of the reflected light on the reflecting surface 35a of the first light beam ILB1 is 0, the phase of the reflected light on the reflecting surface 36a of the second light beam ILB2 is ⁇ , so the two reflected lights are in antiphase. It is.
  • the amount of reflected light from the mirror element 34 of the illumination light ILB is reduced by the interference between the reflected light of the first light beam ILB1 and the reflected light of the second light beam ILB2. It decreases with respect to the light quantity (maximum light quantity) in the state of 1.
  • the rate of reduction of the reflected light varies depending on the ratio of the area of the reflecting surface 35a and the area of the reflecting surface 36a. For example, when the area of the reflection surface 35a is equal to the area of the reflection surface 36a, the light amount (minimum light amount) of the reflected light from the mirror element 34 in the second state is zero.
  • the mirror element 34 that is in the second state and whose reflected light phase is 0 and whose reflected light amount is smaller than the maximum light amount is referred to as a dark pixel (hereinafter referred to as a dark pixel) DP. It should be noted that the dark element DP also includes a mirror element 34 in which the amount of reflected light is zero.
  • the mirror element 34 in the second state when the area of the reflecting surface 36a of the movable mirror portion 36 is larger than the area of the reflecting surface 35a, the phase of the incident illumination light ILB is more than that of the reflected light of phase 0. Since the amount of reflected light of ⁇ increases, the amount of reflected light as a whole is lower than the maximum amount of light, but becomes light having a phase of ⁇ (phase-shifted light). Therefore, hereinafter, the mirror element 34 in the second state and the phase of the reflected light is ⁇ will be referred to as a phase shifter pixel PP.
  • the mirror element 34 in the first state acts as a bright pixel BP, but the mirror element 34 in the second state has an area ratio of the reflecting surfaces 35a and 36a.
  • the dark pixel DP or the phase shifter pixel PP is formed in accordance with the ratio rm of the area of the reflection surface 36a to the total area of the reflection surfaces 35a and 36a (hereinafter referred to as mirror area ratio) rm.
  • FIG. 3A shows a reflection surface of an array of 3 rows ⁇ 3 columns of mirror elements 24 in FIG. 3A
  • the area SZ of the reflecting surface 35a of the fixed mirror portion 35 of the mirror element 34 is expressed by the above equation (1A)
  • the area SP of the reflecting surface 36a of the movable mirror portion 36 is expressed by the above equation (1B).
  • the curve in FIG. 3B shows that the mirror element 34 is in its second state (the phase of the reflected light from the reflecting surface 35a of the fixed mirror portion 35 is 0, and the reflected light from the reflecting surface 36a of the movable mirror portion 36 is reflected).
  • the relationship between the reflectance r (vertical axis) of the mirror element 34 with respect to incident light and the mirror area ratio rm (horizontal axis) when the phase is set to ⁇ is shown.
  • the phase of the reflected light from the mirror element 34 is 0, and the mirror area ratio rm is from 0.5 (50%).
  • the phase of the reflected light from the mirror element 34 is ⁇ .
  • the range of the mirror area ratio rm may be set to a range of 0.15 to 0.85 (15 to 85%) as follows.
  • the amount of reflected light from the mirror element 34 in the second state is at least 80%. It is preferable to reduce (reflectance r is 0.2 or less).
  • the range of the mirror area ratio rm may be set within the range of 0.3 to 0.7 (30 to 70%) from the curve of FIG.
  • the combination of the mirror elements 34 in the first state and the second state can be regarded as a substantially bright / dark pattern, and an arbitrary pattern with higher contrast can be easily set (generated) by the mirror element 34 unit. )it can.
  • a spatial light modulator 28 can also be used as, for example, a pattern generation unit of a projector.
  • the mirror area ratio rm is 0.5 (rm1 in FIG. 3B)
  • the reflectance r of the mirror element 34 is 0, the amount of reflected light is 0, and the mirror element 34 is a complete dark pixel DP. It becomes.
  • a pattern (binary pattern) composed of any combination of bright and complete dark pixels can be generated by combining the mirror element 34 in the first state and the mirror element 34 in the second state.
  • the spatial light modulator 28 is used as, for example, a variable pattern generation unit for a binary pattern of a maskless exposure apparatus
  • ⁇ reflected light is mixed. Therefore, when the mirror element 34 in the second state is substantially used as the dark pixel DP, the mirror area ratio rm is preferably set within the following range (within a range of 50 ⁇ 5%).
  • the width ex1 of the reflective surface 35a may be set to approximately 0.707 times the pitch px as follows.
  • the pitch px is about 4 ⁇ m
  • the width ex1 is approximately 2.83 ⁇ m.
  • the reflectance r of the mirror element 34 is 0.06 (6). %)
  • the phase of the reflected light from the mirror element 34 is ⁇ .
  • the reflected light having a reflectance of 6% and a phase of ⁇ is the same as the amount and phase of the light that has passed through the phase shifter of a so-called dimming phase shift mask having a transmittance of 6% used in the exposure apparatus.
  • the same pattern as the dimming phase shift mask having a transmittance of 6% is obtained depending on the combination of the mirror element 34 in the first state and the mirror element 34 in the second state.
  • the spatial light modulator 28 is used, for example, as a variable pattern generation unit for a dimming phase shift mask of a maskless exposure apparatus, it is about ⁇ 5% ( ⁇ 0.05 in reflectance) with respect to the maximum light amount.
  • ⁇ 5% ⁇ 0.05 in reflectance
  • the mirror area ratio rm is within the following range (62 ⁇ 5% It is preferable to set it within the range.
  • the widths ex2 and ey2 (px, py) of the outer shape of the mirror element 34 (reflection surface 35a) are equal to each other in FIG. If the widths ex1 and ey1 of the outer shape of the surface 36a are equal to each other, the following relationship may be satisfied.
  • the voltage applied to the second electrodes 38B of the plurality of mirror elements 34 is individually controlled by the modulation control unit 48, whereby the plurality of mirror elements 34 are respectively described above.
  • the bright pixel BP in which the amount of reflected light is maximum or the above-described second state (the fixed mirror portion 35 is in the second position Z2). It can be selectively set to any one of the dark pixels DP (or the phase shifter pixels PP whose reflected light has a phase of ⁇ ) whose reflected light amount has decreased below the maximum light amount in a certain state).
  • the spatial light modulator 28 is referred to as SLM.
  • step 102 of FIG. 4 in the array area (reflecting surface) of the spatial light modulator 28 of FIG.
  • the element 34 is set to the first state, that is, the reflecting surface 36a of the movable mirror portion 36 is set to the first position Z1 (the phase of the reflected light from the reflecting surface 36a is changed to that of the reflected light from the reflecting surface 35a).
  • the mirror element 34 is set to the bright pixel BP (with the same 0 as the phase).
  • step 104 in the array area of the spatial light modulator 28, in the dark pattern area 50B (area shaded) that minimizes the reflectance, the modulation control unit 48 causes each mirror element 34 to be second.
  • the reflecting surface 36a of the movable mirror 36 is set to the second position Z2 (the phase of the reflected light from the reflecting surface 36a is set to ⁇ ), and the mirror element 34 is darkened.
  • illumination light is irradiated from the light source and the illumination system (not shown) onto the array region of the spatial light modulator 28, for example, substantially parallel to the Z direction.
  • the illumination light pulsed light is used as an example, but continuous light can also be used.
  • the reflected light from all the mirror elements 34 of the spatial light modulator 28 is extracted via, for example, a beam splitter (not shown), and the reflected light is projected onto a predetermined image plane via a projection system (not shown).
  • a projection system not shown
  • an image of a light / dark pattern or a dimming phase shift pattern formed by all the mirror elements 34 can be projected onto the image plane.
  • the irradiation of illumination light is stopped, the arrangement of the bright pattern region 50A and the dark pattern region 50B is changed, and steps 102, 104, and 106 are repeated, so that the pattern projected before that is the image plane. Different patterns can be projected.
  • the spatial light modulator 28 of the present embodiment has a plurality of mirror elements 34 (reflective elements) that can each reflect light.
  • the mirror element 34 includes a fixed mirror part 35 (fixed part) having a reflective surface 35a (first reflective surface) and a Z direction (first direction) parallel to the normal direction of the surface of the fixed mirror part 35.
  • a movable mirror portion 36 (movable portion) that is supported displaceably in the direction) and includes a reflective surface 36a (second reflective surface), and an electrode 38A that displaces the movable mirror portion 36 in the Z direction with respect to the fixed mirror portion 35.
  • a drive unit made of 38B.
  • the ratio of the area of the reflecting surface 36a to the total area of the reflecting surface including the reflecting surfaces 35a and 36a (mirror area ratio rm) with respect to the light incident on the mirror element 34 is the movable mirror with respect to the fixed mirror 35.
  • the amount of light reflected by the mirror element 34 is set to be able to be reduced by at least 50% with respect to the maximum amount of light according to the relative position of the portion 36 in the Z direction.
  • the amount of reflected light from the mirror element 34 is maximized in accordance with the relative position in the Z direction of the movable mirror portion 36 (reflection surface 36a) with respect to the fixed mirror portion 35 (reflection surface 35a). It changes by 50% or more with respect to the amount of light. For this reason, even if the movement of the movable mirror unit 36 is a simple parallel movement along the Z direction, a dark pattern or a pattern close to this can be generated in units of mirror elements 34.
  • the ratio of the area of the reflecting surface 36a to the total area of the reflecting surface including the reflecting surfaces 35a and 36a is 30 to 70. % (Within the above-described formula (5)).
  • the reflected light has the maximum position in the Z direction of the movable mirror portion 36 (reflecting surface 36a) with respect to the fixed mirror portion 35 (reflecting surface 35a) of the first mirror element 34 of the plurality of mirror elements 34.
  • Z1 first state
  • the position of the reflecting surface 36a in the Z direction with respect to the reflecting surface 35a of the second mirror element 34 is set to the second position Z2 (second state).
  • the amount of reflected light from the second mirror element 34 can be reduced by at least 80% from the maximum amount (reflectance r is made 0.2 or less).
  • the combination of the mirror elements 34 in the first state and the second state can be regarded as a substantially bright / dark pattern, and more contrast-enhanced.
  • a high arbitrary pattern can be easily set (generated) in units of mirror elements 34.
  • the spatial light modulator 28 of the present embodiment is a Z direction (first direction) that is a moving direction of the movable mirror portion 36 with respect to the fixed mirror portion 35.
  • the fixed mirror portions 35 of the two mirror elements 34 arranged adjacent to each other in the X direction and the Y direction (second direction) perpendicular to the X direction and the Y direction are continuous, and the movable mirror portion 36 of the two mirror elements 34 Are spaced apart in the X and Y directions.
  • the lines are equidistant from the contours of the reflecting surfaces 36a (second reflecting surfaces) of the two mirror elements 34 arranged adjacent to each other in the X direction and the Y direction.
  • Ratio of the area of the reflecting surface 36a of one movable mirror portion 36 to the total area of the region AS (first region) determined by lines AL1, AL2, AL3, AL4 surrounding one fixed mirror portion 35 (mirror area ratio rm) ) Is set within the range of 30 to 70%.
  • the region AS is equal to the shape of the reflection surface obtained by combining the reflection surface 35a of the fixed mirror portion 35 and the reflection surface 36a of the movable mirror portion 36, the above equation (5) is substantially established. It will be. Therefore, the combination of the mirror element 34 in the first state and the second state described above (the mirror element having the movable mirror part 36 with simple movement) can be regarded as a substantially bright / dark pattern, and has a higher contrast. A high arbitrary pattern can be easily set (generated) in units of mirror elements 34.
  • the plurality of mirror elements 34 of the spatial light modulator 28 are each of the first type having the maximum reflected light amount independently of each other.
  • a variable light / dark pattern or a variable dimming phase shift pattern can be easily set.
  • FIG. 5A is an enlarged cross-sectional view showing two mirror elements 34A adjacent to the spatial light modulator 28A in the Y direction.
  • the mirror element 34A includes a fixed mirror portion 35A having a reflecting surface 35Aa, and a normal direction (Z of the surface of the fixed mirror portion 35A via an elastic hinge portion 37 with respect to the fixed mirror portion 35A.
  • a movable mirror portion 36 that is supported so as to be displaceable in the direction) and includes a reflecting surface 36a, and a drive portion that includes electrodes 38A and 38B that displace the movable mirror portion 36 in the Z direction with respect to the fixed mirror portion 35A.
  • the fixed mirror portion 35A is fixed to the surface of the base member 32, and a part of the upper portion 35Ab of the fixed mirror portion 35A protrudes to the back surface side of the reflecting surface 36a of the movable mirror portion 36. Also in this case, it is assumed that the illumination lights ILA and ILB incident on the mirror element 34 are substantially parallel to the Z axis.
  • a reflective film 35Ac made of a metal film such as aluminum is formed on the surface of the fixed mirror part 35A. Of the reflective film 35Ac, illumination is performed through the side surface of the reflective surface 36a of the movable mirror part 36. A region where the light beams ILA and ILB are actually irradiated becomes the reflecting surface 35Aa (first reflecting surface) of the fixed mirror portion 35A.
  • the reflective surface 35Aa of the fixed mirror part 35A has the same area as the reflective surface 35a of the fixed mirror part 35 of the first embodiment of FIG.
  • the Z position of the movable mirror portion 36A of the mirror element 34A at the position P (i, j) is set to the same first position Z1 as in the power-off state.
  • the interval ⁇ 2 in the Z direction between the reflecting surface 35Aa of the fixed mirror portion 35A and the reflecting surface 36a of the movable mirror portion 36 is as follows using the wavelength ⁇ of illumination light and an arbitrary integer n2 of 1 or more. Is set to an integer multiple of one or more half-wavelengths.
  • This interval ⁇ 2 is an interval at which the phase of this light changes by 2 ⁇ (or an integer multiple of 2 ⁇ ⁇ ) when light of wavelength ⁇ reciprocates through this interval. Therefore, in the illumination light ILA incident on the mirror element 34A at the position P (i, j), the first light beam ILA1 reflected by the reflecting surface 35Aa and the second light beam ILA2 reflected by the reflecting surface 36a have the same phase. Thus, the maximum amount of reflected light can be obtained. Therefore, the mirror element 34A in this state is in the first state.
  • the Z position of the movable mirror portion 36A of the mirror element 34A at the position P (i, j + 1) is set to the second position Z2 lower than the first position Z1.
  • the interval ⁇ 3 in the Z direction between the reflecting surface 35Aa and the reflecting surface 36a is set as follows using the wavelength ⁇ of the illumination light and an arbitrary integer n2 of 0 or more.
  • ⁇ 3 ⁇ / 4 + n2 ⁇ ⁇ / 2 (9)
  • the interval ⁇ 4 in the Z direction between the two positions Z1 and Z2 is as follows using an arbitrary integer n3 of 0 or more.
  • the interval ⁇ 3 in the equation (9) is an interval at which the phase of the light changes by ⁇ (or an integer multiple of ⁇ + 2 ⁇ ⁇ ) when light having the wavelength ⁇ reciprocates through the interval. Therefore, out of the illumination light ILB incident on the mirror element 34A at the position P (i, j + 1), the first light beam ILB1 reflected by the reflection surface 35Aa and the second light beam ILB2 reflected by the reflection surface 36a are in opposite phases. become.
  • the mirror element 34A in this state is in the second state.
  • Other structures are the same as those in FIG. Therefore, by using the spatial light modulator 28A shown in FIG. 5A, as in the first embodiment, even if the movement of the movable mirror portion 36 is a simple translation along the Z direction, the mirror element A dark pattern or a pattern close to this can be generated in units of 34A.
  • the outer shape of the movable mirror part 36 (reflection surface 36a) of the mirror elements 34 and 34A of the above embodiment is a quadrangle.
  • the outer shape of the reflecting surface 36Ba of the movable mirror portion 36 may be circular.
  • the ratio of the area of the reflection surface 36Ba to the total area of the reflection surfaces 35Ba and 36Ba (mirror area ratio) rm is It becomes as follows.
  • the mirror area ratio ⁇ ⁇ er 2 / ex 2 (11) Accordingly, when a certain mirror element 34B is set to the first state (bright pixel BP) with the maximum amount of reflected light and another mirror element 34B is set to the second state with the minimum amount of reflected light, the mirror area ratio ) Depending on rm, the mirror element 34 in its second state becomes a dark pixel DP or a phase shifter pixel PP.
  • the mirror area ratio rm may be set to 0.5.
  • the radius er may be (0.5 / ⁇ ) 1/2 ex, that is, approximately 0.4 ex, from the equation (11).
  • the mirror area ratio rm may be set to 0.62.
  • the radius er may be (0.62 / ⁇ ) 1/2 ex, that is, approximately 0.44 ex.
  • the shape of the reflective surface of the movable mirror part of the mirror element is arbitrary, and the shape may be, for example, an octagon, a hexagon, a triangle, or a rectangle.
  • a part of the movable mirror portion 36 of the adjacent mirror element may be in contact.
  • FIG. 6 shows a schematic configuration of the maskless exposure apparatus EX of the present embodiment.
  • the exposure apparatus EX includes an exposure light source 2 that emits pulsed light, an illumination optical system ILS that illuminates an irradiated surface with illumination light (exposure light) IL from the light source 2, and substantially A spatial light modulator according to the first embodiment including a plurality of mirror elements 34 that reflect incident light arranged in a two-dimensional array on an irradiation surface or a surface in the vicinity thereof, and the spatial light modulator 28, and a pattern control system 43 for driving 28.
  • FIG. 6 and FIG. 7 and the like described below portions corresponding to FIG. 1A are denoted by the same reference numerals, and detailed description thereof is omitted.
  • the exposure apparatus EX receives the illumination light IL reflected by the reflective variable pattern generated by the multiple mirror elements 34, and generates an aerial image (device pattern) formed corresponding to the pattern.
  • Projection optical system PL that projects onto the surface of wafer W (substrate), wafer stage WST that positions and moves wafer W, main control system 40 that includes a computer that controls the overall operation of the apparatus, various control systems, and the like And.
  • the Z axis is set parallel to the optical axis AX of the projection optical system PL
  • the Y axis is set in the direction parallel to the paper surface of FIG. 6 in the plane perpendicular to the Z axis
  • the Y axis is perpendicular to the paper surface of FIG.
  • This coordinate system (X, Y, Z) is the same as the coordinate system of FIG.
  • the angles around the X axis, the Y axis, and the Z axis are also referred to as angles in the ⁇ x direction, the ⁇ y direction, and the ⁇ z direction, respectively.
  • the wafer W is scanned in the Y direction (scanning direction) during exposure.
  • an ArF excimer laser light source that emits a pulse of approximately linearly polarized laser light having a wavelength of 193 nm and a pulse width of about 50 ns at a frequency of about 4 to 6 kHz is used.
  • a KrF excimer laser light source having a wavelength of 248 nm, a pulsed light emitting diode, or a solid pulse laser light source that generates harmonics of laser light output from a YAG laser or a solid state laser (semiconductor laser, etc.) Can be used.
  • the solid-state pulse laser light source can emit laser light with a wavelength of 193 nm (various other wavelengths are possible) and a pulse width of about 1 ns at a frequency of about 1 to 2 MHz.
  • a power source unit 42 is connected to the light source 2.
  • the main control system 40 supplies a light emission trigger pulse TP instructing the pulse emission timing and the light amount (pulse energy) to the power supply unit 42.
  • the power supply unit 42 causes the light source 2 to emit pulses at the instructed timing and light quantity.
  • Illumination light IL made up of pulse laser light having a rectangular cross-sectional shape emitted from the light source 2 and a substantially parallel light beam is a beam expander 4 made up of a pair of lenses, and a polarization control optical system 6 that controls the polarization state of the illumination light IL.
  • the spatial light modulator 9 includes a main body 10 that includes a base member 11 that supports a large number of micromirrors 12, and an angle control unit 49 that controls the inclination angles of the large number of micromirrors 12.
  • the main control system 40 controls the tilt angles of the many micromirrors 12 of the spatial light modulator 9 via the illumination control system 41, so that the illumination pupil plane IPP described later has, for example, a circular shape, an annular shape, or a multipolar shape. An illumination pupil having a light intensity distribution of any shape can be set.
  • the illumination light IL reflected by the array of micromirrors 12 is guided to the incident surface of the microlens array 16 in parallel to the Y axis via the relay optical system 14 including the lenses 14a and 14b and the mirror 8B.
  • the illumination light IL incident on the microlens array 16 is two-dimensionally divided by a large number of minute lens elements constituting the microlens array 16, and the pupil plane of the illumination optical system ILS that is the rear focal plane of each lens element. (Hereinafter referred to as the illumination pupil plane.)
  • a secondary light source surface light source is formed in the IPP.
  • a plurality of diffractive optical elements may be used instead of the spatial light modulator 9, and a fly-eye lens or the like can be used instead of the microlens array 16.
  • the illumination light IL from the secondary light source (illumination pupil) formed on the illumination pupil plane IPP is parallel to the XY plane via the first relay lens 18A, the field stop 20, the second relay lens 18B, and the beam splitter 24.
  • Incident on the surface to be irradiated (the surface on which the designed transfer pattern is arranged) on the substantially vertical. Reflecting surfaces of a large number of mirror elements 34 arranged in a two-dimensional array on the base member 32 of the main body 30 of the spatial light modulator 28 are arranged on the irradiated surface or in the vicinity thereof.
  • An illumination optical system ILS is configured including optical members from the beam expander 4 to the condenser optical system 22 and the beam splitter 24.
  • Illumination light IL from the illumination optical system ILS illuminates a rectangular illumination area 26A elongated in the X direction on the array of a large number of mirror elements 34 of the spatial light modulator 28 with a substantially uniform illuminance distribution.
  • a large number of mirror elements 34 are arranged in a rectangular region including the illumination region 26A at predetermined pitches px and py (see FIG. 7A) in the X direction and the Y direction.
  • the illumination optical system ILS and the spatial light modulator 28 are supported by a frame (not shown).
  • the beam splitter 24 may be a polarizing beam splitter, and a quarter wavelength plate may be disposed between the polarizing beam splitter and the array of mirror elements 34.
  • FIG. 7A shows an example of a variable pattern set by a plurality of mirror elements 34 in the array region of the spatial light modulator 28 in FIG.
  • each of the plurality of mirror elements 34 has a fixed mirror portion 35 and a movable mirror portion 36.
  • the pitches px, py of the arrangement of the mirror elements 34 in the X direction and the Y direction are equal to the widths ex2, ey2 of the fixed mirror portion 35 of each mirror element 34 in the X direction and the Y direction, and each mirror element 34 is movable.
  • the widths ex1 and ey2 in the X direction and the Y direction of the mirror unit 36 are set smaller than the widths ex2 and ey2.
  • the main control system 40 in FIG. 6 supplies the pattern control system 43 with information on the entire pattern to be transferred.
  • the pattern control system 43 supplies the pattern information set by the plurality of mirror elements 34 to the modulation controller 48 of the spatial light modulator 28 every time the illumination light IL having a predetermined number of pulses is emitted. Accordingly, the pattern in the illumination area 26A changes. Reflected light from the pattern in the illumination area 26A enters the projection optical system PL via the beam splitter 24.
  • the projection optical system PL supported by a column is, for example, a double-sided telecentric reduction projection optical system.
  • the projection optical system PL optically converts a reduced image of the aerial image corresponding to the pattern of the illumination light IL set by the spatial light modulator 28 to the exposure area 26B (one illumination area 26A) in one shot area of the wafer W. Formed in a conjugate region).
  • the projection magnification ⁇ of the projection optical system PL is, for example, about 1/10 to 1/100.
  • the pitches px and py (and thus the widths ex1 and ey1) are equal to each other.
  • the lines are equidistant from the respective contours of the reflecting surface 36a (second reflecting surface) of the movable mirror portion 36 of the two adjacent mirror elements 34 in FIG. Movement of the movable mirror unit 36 relative to the fixed mirror unit 35 is performed using a line surrounding the movable mirror unit 36 of one mirror element 34 as an outline of the reflective surface 35a (first reflective surface) of the fixed mirror unit 35.
  • the dimension (width) of the outline of the square in the plane (XY plane) orthogonal to the Z direction (first direction), which is the direction, is py (same as the pitch of the mirror elements 34).
  • the contour of the reflecting surface 36a (second reflecting surface) of the movable mirror portion 36 is finer than the resolution (half pitch or line width) of the projection optical system PL, and the contour is resolved by the projection optical system PL. It means not. Further, the resolution of the projection optical system PL is set to be smaller than the width (2 ⁇ py) of at least two mirror elements 34, and the pattern formed by the two mirror elements 34 is resolved by the projection optical system PL. Is done. By these, it is possible to prevent the transfer of the image of the contour of the movable mirror portion 36 of each mirror element 34 on the surface of the wafer W (the boundary portion between the fixed mirror portion 35 and the movable mirror portion 36).
  • the width ey2 (equivalent to ex2 here) of the reflecting surface 36a of the movable mirror portion 36 may be used instead of the contour width py of the reflecting surface 35a.
  • the image of the movable mirror portion 36 of each mirror element 34 can be prevented from being transferred to the surface of the wafer W by the projection optical system PL.
  • the reflecting surface of the movable mirror portion 36 of the plurality of mirror elements 34 periodically arranged adjacent to the X direction or the Y direction (second direction) orthogonal to the Z direction (first direction).
  • An interval (referred to as ey3) between the centers (centers of gravity) of 36a (second reflecting surface) is the same as the pitch py, and the interval ey3 may satisfy the equation (14). That is, the interval ey3 between the centers (centers of gravity) of the reflecting surfaces 36a may not be resolved by the projection optical system PL. Also in this case, the image of the movable mirror portion 36 of the mirror element 34 can be prevented from being transferred onto the wafer W by the projection optical system PL.
  • the resolution of the projection optical system PL is about several tens of nm.
  • the wafer W includes, for example, a photoresist (photosensitive material) applied to a surface of a circular flat base material such as silicon with a thickness of about several tens to 200 nm.
  • the exposure apparatus EX is of an immersion type, for example, as disclosed in US Patent Application Publication No. 2007/242247, a space between the optical member at the tip of the projection optical system PL and the wafer W is disclosed.
  • a local liquid immersion device for supplying and recovering a liquid (for example, pure water) that transmits the illumination light IL is provided. In the case of the immersion type, the resolution can be further increased.
  • a wafer W is sucked and held on the upper surface of wafer stage WST via a wafer holder (not shown), and wafer stage WST performs step movement in the X direction and Y direction on a base member (not shown) and Y It can move in the direction at a constant speed.
  • the position of wafer stage WST in the X and Y directions, the rotation angle in the ⁇ z direction, and the like are measured by laser interferometer 45, and this measurement information is supplied to stage control system 44.
  • Stage control system 44 controls the position and speed of wafer stage WST via drive system 46 such as a linear motor based on control information from main control system 40 and measurement information from laser interferometer 45.
  • an alignment system (not shown) for detecting the position of the alignment mark on the wafer W is also provided.
  • the illumination conditions of the illumination optical system ILS are set.
  • the pattern control system 43 causes the modulation controller 48 of the spatial light modulator 28 to form a light / dark pattern formed by a plurality of mirror elements 34 corresponding to the aerial image formed in the exposure area 26 ⁇ / b> B.
  • the information of the dimming phase shift pattern is supplied.
  • each mirror element 34 in the bright pattern area 53 is set to the first state (a state in which the amount of reflected light is maximized). Therefore, the Z position of the corresponding movable mirror part 36 is set to the first position Z1.
  • each mirror element 34 in the bright pattern region 53 becomes a bright pixel BP.
  • step 114 in order to set each mirror element 34 in the dark pattern areas 54A, 54B, etc. in the array area of the mirror elements 34 to the second state (state in which the amount of reflected light is minimized).
  • the Z position of the movable mirror portion 36 to be set is set to the second position Z2.
  • each mirror element 34 in the dark pattern areas 54A, 54B, etc. becomes a dark pixel DP.
  • each mirror element 34 in the second state can be set as the phase shifter pixel PP.
  • the dark pattern regions 54A, 54B, etc. are in the phase of the reflected light. Becomes a phase shifter region of ⁇ .
  • steps 112 and 114 may be executed substantially simultaneously (in parallel).
  • step 116 wafer W coated with a resist is loaded on wafer stage WST. Following the alignment of the wafer W, for example, in order to expose the shot areas SA21, SA22,... Arranged in a line in the Y direction on the surface of the wafer W shown in FIG. Position. Then, the main control system 40 supplies the light emission trigger pulse TP to the power supply unit 42, so that the illumination light IL is irradiated in a pulsed manner on the array of mirror elements 34, and the projection optical pattern formed by the array of mirror elements 34 is projected. An image by the system PL is exposed on the surface of the wafer W (step 118).
  • step 12 when the exposure to the shot area of one row of the wafers W has not been completed (step 12), the process proceeds to step 122, and the wafer W is moved in the Y direction. Note that the wafer W is substantially continuously moved (scanned) in the Y direction, and exposure is performed for each pulse emission. Further, arrows in the shot area SA21 and the like in FIG. 8A indicate the relative movement direction of the exposure area 26B with respect to the wafer W.
  • the pattern control system 43 corresponds to the aerial image formed in the exposure area 26B in the modulation control unit 48 of the spatial light modulator 28.
  • Information on the light / dark pattern or dimming phase shift pattern formed by the plurality of mirror elements 34 is provided (step 124).
  • the pattern 52 shown in FIG. 7A previously exposed is translated in the Y direction corresponding to the scanning direction of the wafer W, and the end in the Y direction is obtained. This means deleting or adding a part pattern.
  • each mirror element 34 in the bright pattern region 53S becomes a bright pixel BP
  • each mirror element 34 in the dark pattern regions 54AS, 54BS, etc. becomes a dark pixel DP or a phase shifter pixel PP.
  • the process proceeds to step 118, and pulse light emission is repeated, whereby a target aerial image is sequentially exposed in the exposure region 26B according to the position in the Y direction.
  • the shot area SA21 crosses the exposure area 26B, the entire aerial image (circuit pattern) is exposed in the shot area SA21.
  • the pattern control system 43 supplies the modulation controller 48 with the pattern information of the illumination light IL while scanning the wafer W in the same direction.
  • the main control system 40 supplies the light emission trigger pulse TP to the power supply unit 42. In this way, continuous exposure can be performed from the shot areas SA21 to SA22.
  • the process shifts from step 126 to step 128 to drive the wafer stage WST to drive the wafer. W is stepped in the X direction (non-scanning direction orthogonal to the scanning direction).
  • the scanning direction of the wafer W with respect to the exposure area 26B indicated by the dotted line is set to the opposite ⁇ Y direction, and the pattern control system 43 supplies the information of the pattern in the reverse arrangement to the modulation control unit 48, and the main control system 40
  • the exposure can be continuously performed from the shot areas SA32 to SA31. In this exposure, it is possible to expose different aerial images to the shot areas SA21, SA22 and the like.
  • the photoresist on the wafer W is developed to form a resist pattern in each shot area of the wafer W.
  • any light / dark pattern or dimming phase can be used in a maskless manner.
  • An image of the shift pattern can be exposed on the wafer W.
  • a spatial light modulator 28A in FIG. 5A or a spatial light modulator having a mirror element in FIG. 5B can be used. is there.
  • each shot area (for example, SA21) of the wafer W is divided into a plurality of partial areas SB1 to SB5 in the Y direction, and a partial area is formed in the exposure area 26B of the projection optical system PL.
  • the illumination light IL may be emitted by a predetermined number of pulses, and the partial area SB1 or the like may be exposed with the reflected light from the array of mirror elements 34 of the spatial light modulator 28.
  • the image of an arbitrary light / dark pattern or dimming phase shift pattern formed by the reflected light from the array of mirror elements 34 of the spatial light modulator 28 and the wafer W may be stationary. Thereafter, the wafer W is stepped in the Y direction, and after the next partial area SB2 or the like reaches the exposure area 26B, the partial area SB2 or the like is similarly exposed.
  • This method is substantially a step-and-repeat method, but different patterns are exposed on the partial areas SB1 to SB5 and the like.
  • the telecentric projection optical system PL is used on the object side and the image plane side.
  • a non-telecentric projection optical system PLA can be used on the object side, as shown by the exposure apparatus EXA of the modified example of FIG.
  • the illumination optical system ILSA of the exposure apparatus EXA includes a main body ILSB including optical members from the light source 2 to the first relay lens 18A in FIG. 6 and a field of view where illumination light IL from the main body ILSB is sequentially irradiated.
  • a diaphragm 20, a mirror 8C, a second relay lens 18B, a condenser optical system 22, and a mirror 8D are provided.
  • the illumination optical system ILSA irradiates the array of mirror elements 34 of the spatial light modulator 28 arranged on the object plane of the projection optical system PLA with the illumination light IL at an incident angle ⁇ in the ⁇ x direction.
  • the projection optical system PLA forms a predetermined aerial image on the surface of the wafer W by the illumination light IL reflected obliquely from the array of mirror elements 34.
  • the incident angle ⁇ is, for example, several deg (°) to several tens deg.
  • the phase difference between the illumination light reflected by the mirror element 34 in the first state and the illumination light reflected by the mirror element 34 in the second state is ⁇ (or an integer multiple of ⁇ + 2 ⁇ ).
  • the value of the interval ⁇ 1 in equation (2) or the interval ⁇ 3 in equation (9) may be adjusted so that Other configurations and operations are the same as those in the above embodiment.
  • the exposure apparatus EXA of this modified example exposure can be performed in a maskless manner, the utilization efficiency of the reflected light from the spatial light modulator 28 is high, and any polarized light can be used as the illumination light IL without reducing the utilization efficiency. State light can be used.
  • a rod type integrator as an internal reflection type optical integrator may be used.
  • a condensing optical system is added to the spatial light modulator 9 side of the relay optical system 14 to form a conjugate surface of the reflective surface of the spatial light modulator 9, and the incident end is near the conjugate surface.
  • a rod-type integrator may be arranged so that is positioned.
  • FIG. 2 instead of the spatial light modulator 9 for setting the illumination pupil of a light intensity distribution of an arbitrary shape on the illumination pupil plane IPP, FIG.
  • the spatial light modulator 28 in FIG. 2, the spatial light modulator 28A in FIG. 5A, the spatial light modulator having the mirror element in FIG. 5B, or the like can also be used.
  • a spatial light modulator that forms a bright pixel BP and a dark pixel DP by displacement of the mirror element 34 as a movable part in the Z direction, and a spatial light modulator in which the mirror element 34 as a movable part is a phase shifter pixel PP. May be used in combination.
  • FIG. 11 shows the spatial light modulator main body 30 forming the bright pixel BP and the dark pixel DP and the spatial light modulator main body 301 having the phase shifter pixel PP as the exposure apparatus EX in FIG.
  • the main body portions 30 and 301 of these spatial light modulators are mounted on a spatial light modulator stage 303 that can move at least in the scanning direction (Y direction).
  • the exposure apparatus moves the spatial light modulator stage 303 based on a control signal indicating which type of spatial light modulator is used, and sets the spatial light modulator to be used in the optical path of the exposure apparatus.
  • the spatial light modulator 302 having an array of a large number of micromirrors each capable of controlling the height of the reflecting surface is also a spatial light modulator stage 303. If necessary, the spatial light modulator 302 is also set in the optical path of the exposure apparatus. Examples of such spatial light modulator 302 include US Patent Application Publication No. 2005/0111119, US Patent Application Publication No. 2007/0064298, US Patent Application Publication No. 2013/0278912, or US Patent Application Publication No. 2013. The spatial light modulator disclosed in / 0314683 can be used.
  • a spatial light modulator that generates a bright pixel BP and a dark pixel DP and a spatial light modulator that forms a phase shifter pixel may be provided integrally.
  • the movable mirror portion 36a has an area ratio of 50 ⁇ 5% with respect to the area AS (first region) determined by the lines AL1, AL2, AL3, AL4 surrounding the movable mirror portion.
  • the second movable mirror part 36a1 which is provided so as to surround the movable mirror part 36a and is movable in the Z direction, has an area of a reflection surface of the second movable mirror part 36a1 and a reflection of the movable mirror part 36a. The sum with the area of the surface is 62 ⁇ 5% with respect to the area of the area AS (first area).
  • the second movable mirror part 36a1 is set at the same position as the fixed mirror part 35, and only the movable mirror part 36a is moved.
  • Pixel BP and dark pixel DP can be generated.
  • the phase shifter pixel can be formed by moving the movable mirror portion 36a and the second movable mirror portion 36a1 in synchronization with each other in the Z direction.
  • step 221 for designing the function and performance of the electronic device, and forms mask pattern data based on this design step.
  • step 222 which is stored in the main control system of the exposure apparatuses EX, EXA, step 223, in which a substrate (wafer) which is the base material of the device is manufactured and resist is applied, and the exposure apparatuses EX, EXA (or exposure method) described above
  • a substrate including a step of exposing a spatial image of the phase distribution generated by the spatial light modulators 28 and 28A onto a substrate (sensitive substrate), a step of developing the exposed substrate, heating (curing) of the developed substrate, and an etching step Processing step 224, device assembly step (dicing process, bonding process, packaging process, etc.) Including process) 225, and an inspection step 226, and the like.
  • This device manufacturing method includes a step of exposing the wafer W using the maskless exposure apparatus of the above embodiment, and a step of processing the exposed wafer W (step 224). Therefore, an electronic device can be efficiently manufactured with high accuracy. Further, the present invention is not limited to the application to the manufacturing process of a semiconductor device. For example, a manufacturing process such as a liquid crystal display element and a plasma display, an imaging element (CMOS type, CCD, etc.), a micromachine, a MEMS (Microelectromechanical systems), thin film magnetic heads, and various devices (electronic devices) such as DNA chips can be widely applied.
  • the spatial light modulators 28, 28A and the like of the above-described embodiment can be used for applications other than the variable pattern generation unit of the exposure apparatus, for example, a projector pattern generation unit.
  • this invention is not limited to the above-mentioned embodiment, A various structure can be taken in the range which does not deviate from the summary of this invention.
  • EX, EXA ... exposure apparatus, ILS, ILSA ... illumination optical system, PL, PLA ... projection optical system, W ... wafer, 28, 28A ... spatial light modulator, 34, 34A ... mirror element, 32 ... base member, 35, 35A: fixed mirror part, 36, 36A ... movable mirror part, 38A, 38B ... electrode, 48 ... modulation control part

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

L'invention porte sur un modulateur spatial de lumière, comprenant une pluralité d'éléments réfléchissants qui sont chacun aptes à réfléchir une lumière. Ces éléments de miroir comprennent respectivement : une partie de miroir ancrée, comprenant en outre une face réfléchissante ; et une partie de miroir mobile, qui est soutenue de façon à être déplaçable dans une direction qui traverse la surface de la partie de miroir ancrée, et qui comprend en outre une face réfléchissante. Selon ce modulateur spatial de lumière, une partie de miroir mobile qui est soutenue de façon à être déplaçable dans la direction qui traverse la surface de cette partie de miroir ancrée est la partie mobile, rendant ainsi simple le mouvement de la partie mobile, et permettant la génération d'un motif sombre ou d'un motif proche de celui-ci.
PCT/JP2013/084456 2012-12-26 2013-12-24 Modulateur spatial de lumière et son procédé de pilotage, et procédé et dispositif d'exposition Ceased WO2014104001A1 (fr)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017102256A (ja) * 2015-12-01 2017-06-08 株式会社ニコン 制御装置及び制御方法、露光装置及び露光方法、デバイス製造方法、データ生成方法、並びに、プログラム
CN114153113A (zh) * 2020-09-08 2022-03-08 青岛海信激光显示股份有限公司 激光投影设备及其投影方法、激光投影系统
WO2024052170A1 (fr) * 2022-09-05 2024-03-14 Carl Zeiss Smt Gmbh Miroir individuel d'un miroir à facettes de pupille et miroir à facettes de pupille pour une unité optique d'éclairage d'un appareil d'exposition par projection

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003315701A (ja) * 2002-04-25 2003-11-06 Hitachi Ltd ミラーデバイス及び該ミラーデバイスを備えた光スイッチ
JP2005503581A (ja) * 2001-08-16 2005-02-03 シリコン・ライト・マシーンズ 光学的分割による熱安定性増進
WO2012039353A1 (fr) * 2010-09-22 2012-03-29 株式会社ニコン Modulateur optique spatial, appareil d'exposition, et procédé de fabrication d'un dispositif
WO2012081292A1 (fr) * 2010-12-13 2012-06-21 株式会社ニコン Modulateur spatial de lumière, procédé de commande de celui-ci et procédé et appareil d'exposition
WO2013031901A1 (fr) * 2011-09-02 2013-03-07 株式会社ニコン Procédé et dispositif de contrôle d'un modulateur spatial de lumière, et procédé et dispositif d'exposition
WO2013108560A1 (fr) * 2012-01-18 2013-07-25 株式会社ニコン Procédé de commande pour modulateur spatial de lumière, procédé de génération de motif pour exposition et procédé et dispositif d'exposition

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005503581A (ja) * 2001-08-16 2005-02-03 シリコン・ライト・マシーンズ 光学的分割による熱安定性増進
JP2003315701A (ja) * 2002-04-25 2003-11-06 Hitachi Ltd ミラーデバイス及び該ミラーデバイスを備えた光スイッチ
WO2012039353A1 (fr) * 2010-09-22 2012-03-29 株式会社ニコン Modulateur optique spatial, appareil d'exposition, et procédé de fabrication d'un dispositif
WO2012081292A1 (fr) * 2010-12-13 2012-06-21 株式会社ニコン Modulateur spatial de lumière, procédé de commande de celui-ci et procédé et appareil d'exposition
WO2013031901A1 (fr) * 2011-09-02 2013-03-07 株式会社ニコン Procédé et dispositif de contrôle d'un modulateur spatial de lumière, et procédé et dispositif d'exposition
WO2013108560A1 (fr) * 2012-01-18 2013-07-25 株式会社ニコン Procédé de commande pour modulateur spatial de lumière, procédé de génération de motif pour exposition et procédé et dispositif d'exposition

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017102256A (ja) * 2015-12-01 2017-06-08 株式会社ニコン 制御装置及び制御方法、露光装置及び露光方法、デバイス製造方法、データ生成方法、並びに、プログラム
CN114153113A (zh) * 2020-09-08 2022-03-08 青岛海信激光显示股份有限公司 激光投影设备及其投影方法、激光投影系统
CN114153113B (zh) * 2020-09-08 2025-08-15 青岛海信激光显示股份有限公司 激光投影设备及其投影方法、激光投影系统
WO2024052170A1 (fr) * 2022-09-05 2024-03-14 Carl Zeiss Smt Gmbh Miroir individuel d'un miroir à facettes de pupille et miroir à facettes de pupille pour une unité optique d'éclairage d'un appareil d'exposition par projection

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