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WO2014199720A1 - Dispositif d'imagerie monolithique - Google Patents

Dispositif d'imagerie monolithique Download PDF

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Publication number
WO2014199720A1
WO2014199720A1 PCT/JP2014/060778 JP2014060778W WO2014199720A1 WO 2014199720 A1 WO2014199720 A1 WO 2014199720A1 JP 2014060778 W JP2014060778 W JP 2014060778W WO 2014199720 A1 WO2014199720 A1 WO 2014199720A1
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WIPO (PCT)
Prior art keywords
metal
solid
imaging device
state imaging
filter
Prior art date
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Ceased
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PCT/JP2014/060778
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English (en)
Japanese (ja)
Inventor
貴司 中野
数也 石原
信義 粟屋
夏秋　和弘
瀧本　貴博
雅代 内田
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Sharp Corp
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Sharp Corp
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Priority to JP2015522621A priority Critical patent/JP6105728B2/ja
Publication of WO2014199720A1 publication Critical patent/WO2014199720A1/fr
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/003—Light absorbing elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/008—Surface plasmon devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors

Definitions

  • the present invention relates to a solid-state imaging device.
  • CCD Charge Coupled Device
  • CMOS Complementary Metal Oxide Semiconductor
  • Many of these solid-state imaging devices are composed of a pixel array in which millions of pixels are two-dimensionally arranged. Each pixel accumulates signal charges according to the light intensity from the subject, and according to the accumulated charge amount. The electrical signal is sampled and imaged as analog or digital data.
  • the solid-state imaging device generally has sensitivity in a specific electromagnetic wave wavelength band.
  • a solid-state imaging device based on silicon is sensitive to wavelengths shorter than near infrared ( ⁇ 1.1 ⁇ m).
  • silicon-based solid-state imaging devices do not have energy resolution (wavelength resolution) with respect to electromagnetic waves, and it is difficult to specify which wavelength of light is detected from the accumulated charges.
  • a general color imaging device includes several types of on-chip color filters that selectively transmit specific wavelength components to each pixel of the two-dimensional pixel array in order to acquire a color image.
  • a technique is adopted in which light intensity information of a plurality of wavelengths is acquired from a small number of adjacent pixel groups, and a color image is restored by interpolation processing using demosaic.
  • the Bayer method in which on-chip color filters of RGB three primary colors are arranged in a staggered pattern for a unit unit of 2 ⁇ 2 pixels is common.
  • white pixels pixels that transmit all visible wavelength bands
  • complementary color filters such as cyan, magenta, and yellow are placed
  • pixels that detect near infrared rays are placed.
  • FIG. 10 is a diagram showing a schematic configuration of an example of a conventional solid-state imaging device.
  • This solid-state imaging device includes an image area 104 in which a plurality of unit pixels 120 are arranged in a matrix, a row selection circuit 110 that selects the unit pixels 120 in units of rows, and a signal voltage of the unit pixels 120 in the signal processing unit 111.
  • the first vertical signal line 109 that transmits the signal in units of columns
  • the signal processing unit 111 that holds the signal voltage transmitted through the first vertical signal line 109 and cuts high frequency noise
  • the unit pixels 120 are arranged in columns.
  • a column selection circuit 112 that is selected in units, a horizontal signal line 113 that transmits a signal voltage output from the signal processing unit 111 to the output amplifier 114, an output amplifier 114, and a load transistor group 115 are included.
  • the image area 104 includes a photodiode 121, a read transistor 122, a reset transistor 123, an amplification transistor 124, a vertical selection transistor 126, and a floating diffusion portion 125 directly connected to the gate of the amplification transistor 124.
  • an on-chip color filter is installed in each unit pixel 120, and each unit pixel 120 photoelectrically converts only an optical signal in a wavelength region selected by the color filter. In this way, a color signal can be obtained for each unit pixel 120, and a color image can be obtained by combining these color signals.
  • FIG. 11 is a cross-sectional view of the unit pixel 120 in the conventional solid-state imaging device.
  • the conventional solid-state imaging device at least one layer of wiring 214 is disposed above the photodiode 121 and the readout transistor 122 for obtaining an electric signal from the photodiode 121 with the interlayer film 213 interposed therebetween.
  • a pigment type color filter 215 and a microlens 216 are provided above the insulating film with an insulating film interposed therebetween.
  • the light collected by the micro lens 216 installed above the color filter 215 passes through the color filter 215, and R (red), G ( It is separated into each wavelength band of green) and B (blue), and color separation is possible.
  • color filters often contain organic molecules such as pigments.
  • color filters made of organic molecules have low wavelength resolution and are difficult to optimize for a specific narrow band wavelength, there is a limit to increasing the number of colors.
  • transmission characteristics deteriorate due to secular changes caused by external stimuli such as ultraviolet rays (for example, see Non-Patent Document 1).
  • a spectrum sensor using a diffraction grating can acquire a color spectrum with a very high wavelength resolution such that the wavelength resolution ( ⁇ / ⁇ ) exceeds 100, but is limited to special applications such as a large apparatus.
  • ⁇ / ⁇ wavelength resolution
  • a hole array structure in which holes having the same degree as or smaller than a detection wavelength are periodically arranged in a metal thin film or an island array structure having a negative-positive relationship with the structure is known as a surface plasmon resonance structure. It has been reported that the surface plasmon resonance structure functions as a filter whose transmission wavelength can be adjusted by the physical structure by optimizing the period of the holes or islands, the aperture, the dot shape, etc. (for example, non-patent literature) 3 and 4).
  • Patent Documents 1 and 2 disclose a technique using the surface plasmon resonance structure described above as a color filter.
  • Patent Document 3 discloses a technique for shifting the wavelength of transmitted light by changing the refractive index of a dielectric material that fills the surface plasmon resonance structure, and two types of dielectrics having different refractive indexes.
  • a technique that shows transmitted light of two wavelengths by filling with a body is disclosed.
  • the solid-state imaging device provided with the color filter technology disclosed in Patent Documents 1 and 2 described above is based on a dedicated sensor.
  • the color filter generates a spectral function by a structure that repeatedly includes a periodic structure with a specific interval such as ⁇ / 2 of the electromagnetic wave wavelength.
  • a certain scale of periodic structure is required. Therefore, there is a minimum necessary filter area for each wavelength. For example, the filter area of the red color filter is larger than that of the blue color filter. Therefore, the size of the pixel depends on the area of the red color filter, and pixel miniaturization is limited.
  • An object of the present invention is to provide a solid-state imaging device equipped with an optical filter that reduces the area difference of the filter for each wavelength and is compatible with pixel miniaturization.
  • a solid-state imaging device of the present invention includes a light receiving element arranged in a two-dimensional matrix, a pair of the light receiving element and a light receiving surface of each of the light receiving elements, and having a predetermined wavelength.
  • a metal optical filter that transmits light, and at least a part of the metal optical filter includes a metal film, holes periodically arranged in the metal film, and a refractive index higher than that of SiO 2 ,
  • a high-refractive-index material that covers the metal film, or a high-refractive-index layer made of the high-refractive-index material, and a metal island disposed in the high-refractive-index layer with a period less than the predetermined wavelength It is characterized by having.
  • the selection wavelength region can be expanded by using a high refractive index material having a refractive index higher than that of SiO 2 for at least some of the metal optical filters. Accordingly, various wavelengths can be set depending on the type of highly refractive material, so that the difference in filter area for each wavelength can be reduced, and a solid-state imaging device equipped with an optical filter that can cope with pixel miniaturization is realized. Can do.
  • FIG. 2 is a cross-sectional view taken along line A-A ′ of FIG. 1C. It is a figure which shows the spectral characteristics of two types of plasmon filters in 1st Embodiment of this invention. It is a top view which shows the structure of one plasmon filter of FIG. 2A. It is a top view which shows the structure of the other plasmon filter of FIG. 2A.
  • a metal optical filter that transmits light of a desired wavelength with an insulating film interposed above a photoelectric conversion element (light receiving element) such as a photodiode that converts received light into an electric signal is provided. Is formed.
  • the metal optical filter is composed of a metal thin film covered with a dielectric, and a plurality of holes (openings) are periodically arranged in a two-dimensional manner in the metal optical filter.
  • a hole refers to a recess (non-through hole) or a through hole formed in the metal optical filter.
  • the photoelectric conversion elements are two-dimensionally arranged, and the metal optical filter is arranged in a two-dimensional manner by being paired with each of the plurality of photoelectric conversion elements.
  • a photoelectric conversion element is provided for each pixel that is the minimum unit constituting an image to be captured, and a metal optical filter is formed above each photoelectric conversion element.
  • the surface plasmon resonance structure is a sub-wavelength structure in which a thin film made of a metal material having a plasma frequency in the ultraviolet wavelength band is finely processed.
  • a metal material it is preferable to use a metal such as Al, an alloy of Al and Cu, an alloy of Al and Si, Cu, W, Ag, Au, and Ta.
  • the surface plasmon resonance structure has a resonance wavelength determined by the physical properties of the metal, the pattern period, the aperture diameter, the dot size, the film thickness, the medium around the structure, and the like.
  • the basic structure of the surface plasmon resonance structure is a hole array structure, in which holes (through holes or non-through holes) having a diameter smaller than the wavelength of transmitted light are arranged two-dimensionally.
  • a dielectric covering the thin film may be filled. It is preferable to arrange the holes in a honeycomb or orthogonal matrix, and any other arrangement can be applied as long as it has a periodic structure.
  • the plasmon filter (metal optical filter) 61A shown in FIG. 1A is composed of a plasmon resonator in which through holes (holes) 63A are arranged in a honeycomb shape in a metal thin film 62A covered with a dielectric.
  • the plasmon filter 61B shown in FIG. 1B has a surface plasmon resonance structure in which through holes 63B are arranged in an orthogonal matrix in a metal thin film 62B covered with a dielectric.
  • the transmission wavelength that passes through the plasmon filter 61A is set.
  • the transmission wavelength that passes through the plasmon filter 61B is set.
  • a half wavelength of an effective electromagnetic wave wavelength in the medium is preferable, and a range from 1 ⁇ 4 wavelength to 1 wavelength is preferable in consideration of design freedom.
  • the opening diameters of the through holes 63A and 63B must be smaller than the wavelength of light to be transmitted, and a range of 40% to 80% of the period D1 is preferable in consideration of design freedom.
  • the thickness of the metal thin films 62A and 62B is preferably about 100 nm, and can be in the range of 10 to 200 nm in consideration of the degree of design freedom.
  • a hole shape may be optimized.
  • a circular shape, a square shape (square or rectangular shape), a polygonal shape, a cross shape, or the like can be appropriately selected according to a simulation result or the like.
  • FIG. 1C shows a plan view of a plasmon filter 61C configured by a surface plasmon resonance structure in which through holes 63C and non-through holes 63C ′ are arranged in a honeycomb shape in a metal thin film 62C, and FIG. A cross-sectional view along the line -A 'is shown.
  • the plasmon filter 61C is configured by periodically arranging through holes 63C and non-through holes 63C '.
  • FIG. 2A is a diagram showing the spectral characteristics of two types of plasmon filters.
  • the line 2B represents a plasmon filter in which holes (holes) having a period of 360 nm and an opening diameter of 180 nm are arranged in a 1.5 ⁇ m square area in an Al film (thickness 150 nm) as shown in FIG. 2B.
  • 2C shows the spectral characteristics of a plasmon filter in which holes having a period of 360 nm and an opening diameter of 180 nm are arranged in a triangular lattice in a 2.0 ⁇ m square area in an Al film (thickness 150 nm) as shown in FIG. 2C. Indicates. From these results, it is understood that the plasmon filter formed by the periodic opening structure of the metal thin film has a minimum number of periods.
  • FIG. 3 is a diagram showing spectral spectra of three types of plasmon filters.
  • the three types of plasmon filters are all Al films (thickness 150 nm) in which holes (holes) having a period of 260 nm and an opening diameter of 130 nm are arranged in a triangular pattern, and the dielectrics covering the metal thin film are different.
  • a plasmon filter using SiO 2 as a dielectric transmits 400 nm band light
  • a plasmon filter using Al 2 O 3 as a dielectric transmits 500 nm light
  • TiO 2 is used as a dielectric. It can be seen that the plasmon filter used transmits light in the 600 to 700 nm band. Therefore, it can be seen that the higher the refractive index of the dielectric, the more the optical filter can transmit long-wavelength light with the same periodic structure.
  • FIG. 4 is a diagram showing the relationship between the transmission peak wavelengths of three types of plasmon filters and the hole period.
  • the period of 360 nm is the maximum period in the structure of FIG.
  • the dielectric covering the metal thin film of a plasmon filter is only SiO 2
  • the transmission wavelength is limited to 540nm or less, the situation can not cover at least the visible light region (380nm ⁇ 750nm). Therefore, by selecting a dielectric that covers the metal thin film of the plasmon filter on some pixels as a high refractive index material having a higher refractive index than SiO 2 , the selected wavelength region of the solid-state imaging device of this embodiment is expanded. be able to.
  • various wavelengths can be set by simply changing the dielectric material that covers the metal thin film, so that the difference in filter area for each wavelength can be reduced, and an optical filter corresponding to pixel miniaturization can be realized.
  • the high refractive index material can be TiO 2, Si 3 N 4, SiN, Ta 2 O 5, AlSi, AlN, Al 2 O 3, HfO 2, MgO, and ZrO 2 is used.
  • the metal optical filter with a different period of the dielectric material or the periodic structure covering the metal thin film above the photoelectric conversion element for each pixel, the metal optical so as to obtain a different color signal in each pixel.
  • the spectral characteristics of the filter can be designed.
  • the solid-state imaging device is different from the first embodiment in that the opening shape of the plasmon filter on the photoelectric conversion element is a line shape (slit shape) and is arranged in a one-dimensional manner. This is the same as in the first embodiment.
  • different points from the first embodiment will be described, and description of the same configurations as those of the first embodiment will be omitted.
  • FIG. 5 shows an SEM photograph of the plasmon filter of the second embodiment.
  • the plasmon filter of this embodiment it is not necessary that all slits provided in the slit structure penetrate through the metal thin film covered with the dielectric, and some slits are formed on the metal thin film covered with the dielectric.
  • the period D3 is the same length as that of the first embodiment, and the width of the slit is 10% to 30% of the period D3.
  • each pixel is provided with a metal optical filter having a different period of the dielectric material or the periodic structure covering the metal thin film above the photoelectric conversion element for each pixel.
  • the spectral characteristics of the metal optical filter can be designed to obtain different color signals.
  • the solid-state imaging device is different from the first embodiment in that the metal is arranged in an island array shape on the dielectric layer in the plasmon filter on the photoelectric conversion element, and the other configuration is the first embodiment. It is the same.
  • different points from the first embodiment will be described, and description of the same configurations as those of the first embodiment will be omitted.
  • FIG. 6A and 6B are plan views of the plasmon filter of the present embodiment.
  • the plasmon filter 61A ′ of FIG. 6A has a structure that is negative-positive-inverted with respect to the plasmon resonator of the plasmon filter 61A of FIG. Yes.
  • the plasmon filter 61B ′ shown in FIG. 6B has a negative-positive inversion structure with respect to the plasmon resonator of the plasmon filter 61B in FIG. 1B, that is, the islands 64B are arranged in a matrix in the dielectric layer 65B. It has a plasmon resonator structure.
  • the same material as the dielectric covering the metal thin film of the first embodiment can be used. That is, it is SiO 2 or a high refractive index material (TiO 2 , Si 3 N 4 , SiN, Ta 2 O 5 , AlSi, AlN, Al 2 O 3 , HfO 2 , MgO, ZrO 2, etc.).
  • a half wavelength of an effective electromagnetic wave wavelength in the medium is suitable, as in the distances D1 and D2 in FIG.
  • a range of 1 ⁇ 4 wavelength to 1 wavelength is preferable.
  • the islands 64A and 64B are circular or the like having a size of 50% to 80% of the period D2.
  • the island shape in addition to setting the periodic interval (interval D1 or D2) of the islands of the plasmon filter, for example, the island shape may be optimized.
  • the island shape for example, a circular shape, a square shape (square or rectangular shape), a polygonal shape, a cross shape, or the like is appropriately selected according to a simulation result or the like.
  • a metal optical filter having a different material of the dielectric layer or a period of the periodic structure above the photoelectric conversion element for each pixel by installing a metal optical filter having a different material of the dielectric layer or a period of the periodic structure above the photoelectric conversion element for each pixel, a color signal that is different for each pixel.
  • the spectral characteristics of the metal optical filter can be designed to obtain
  • This embodiment shows the arrangement of plasmon filters in the solid-state imaging devices of the first to third embodiments.
  • FIG. 7 an example of the arrangement
  • the wavelength of light that passes through the plasmon filter according to the period of holes, islands, or lines (slit shape) constituting the plasmon resonator, for example, according to the interval D1 between the through holes 63A in FIG. 1A. (Transmission wavelength) is set.
  • the lattice coefficient ⁇ of the plasmon filter determined by the period of holes or islands is set to the lattice coefficient ⁇ 1, the lattice coefficient ⁇ 2,..., And the lattice coefficient ⁇ n in order from the shorter transmission wavelength in the visible wavelength band.
  • one type of plasmon filter corresponds to one pixel, that is, basically the pixel and the plasmon filter correspond to each other one by one, but 1 to a plurality of pixels.
  • Different types of plasmon filters may be supported. That is, one type of plasmon filter may be arranged for a plurality of N ⁇ M pixel units (where N and M are integers of 1 or more).
  • a plasmon filter in which a plurality of pixels are arranged as one unit is hereinafter referred to as a plasmon filter unit as appropriate.
  • the plasmon filter units 71a to 71h include eight types of plasmon filter units 71a to 71h having lattice coefficients ⁇ 1 to ⁇ 8.
  • the plasmon filter units 71a to 71h are arranged in one direction (in the direction from the right end to the left end of the imaging region 52) in the order according to the magnitude of the lattice coefficient ⁇ . For this reason, a plasmon filter having a certain grating coefficient or higher that transmits light having a long wavelength covers a plasmon filter having a plurality of grating coefficients instead of individual ones with a high refractive index material.
  • a plasmon filter unit 71b having a grating coefficient ⁇ 2 having the next shortest transmission wavelength is disposed on the optical black region 53 side of the plasmon filter unit 71a.
  • the plasmon filter units 71 c to 71 g are sequentially arranged in the order of short transmission wavelength, and the plasmon filter unit 71 h is arranged adjacent to the optical black region 53.
  • FIG. 8 is a schematic cross-sectional view of the solid-state imaging device of the present embodiment.
  • the solid-state imaging device 11 has a configuration in which the pixels 21a to 21c in the imaging region 52 and the pixel 21d in the optical black region 53 are arranged adjacent to each other. 8 shows a configuration example in which a back-illuminated CMOS solid-state image sensor is employed as the solid-state image pickup device 11.
  • the photoelectric conversion element portion is a CCD solid-state image sensor, or an organic A photoconductor structure including a photoelectric conversion film or a quantum dot structure may be employed.
  • the pixels 21a to 21d are each configured by laminating an on-chip microlens 81, a color filter layer 82, a light shielding region layer 83, a photoelectric conversion element layer 84, and a signal wiring layer 85 in order from the upper side.
  • the on-chip microlens 81 is an optical element for condensing light on the photoelectric conversion element layer 84 of each of the pixels 21a to 21d.
  • the color filter layer 82 is an optical element for obtaining a color image by the pixels 21 a to 21 c in the imaging region 52.
  • the light shielding region layer 83 includes a metal having light shielding properties such as Al, an alloy of Al and Cu, an alloy of Al and Si, Cu, W, Ag, and Ta. In the optical black region 53, the pixel 21d. Cover all and shield from light. Further, in the imaging region 52, the light shielding region layer 83 has a metal arranged in the hole array structure or the island array structure as described above, and functions as a plasmon filter.
  • the photoelectric conversion element layer 84 converts the received light into electric charges.
  • the pixels 21a to 21d are electrically separated by the element separation layer.
  • the signal wiring layer 85 is provided with wiring for reading charges accumulated in the photoelectric conversion element layer 84.
  • the light shielding region layer 83 has a function of shielding light in the optical black region 53 and a function as a spectral filter in the imaging region 52. Furthermore, since a plasmon filter is employed as a spectral filter, it is possible to acquire a wide variety of color spectra simply by adjusting the period of holes and islands.
  • the light shielding film in the optical black region 53 and the plasmon filter in the imaging region 52 are mounted with the same material in the same light shielding region layer 83, there are few changes from the conventional manufacturing process and less man-hours.
  • a plasmon filter can be manufactured.
  • FIG. 9 is a schematic cross-sectional view of the solid-state imaging device of the present embodiment.
  • the solid-state imaging device 12 has a configuration in which the pixels 21a to 21c in the imaging region 52 and the pixel 21d in the optical black region 53 are arranged adjacent to each other.
  • FIG. 9 shows a configuration example in which a back-illuminated CMOS solid-state image sensor is employed as the solid-state image pickup device 12, but the photoelectric conversion element portion is a CCD solid-state image sensor, or an organic A photoconductor structure including a photoelectric conversion film or a quantum dot structure may be employed.
  • Each of the pixels 21a to 21d is configured by laminating an on-chip microlens 81, a color filter layer 82, a metal particle layer 86, a light shielding region layer 83, a photoelectric conversion element layer 84, and a signal wiring layer 85 in order from the upper side. Yes.
  • the metal particle layer 86 has a hole array structure, an island array, or a line-shaped (slit-shaped) structure, and functions as a plasmon filter. That is, in the configuration example of FIG. 8, the light shielding region layer 83 has a function as a plasmon filter. However, in the configuration example of FIG. 9, a metal particle layer having a function of a plasmon filter is provided separately from the light shielding region layer 83. 86 is provided.
  • the metal particle layer 86 has a function as a spectral filter in the imaging region 52, and the normal imaging function can be realized in other regions. Can be realized.
  • a manufacturing method thereof will be described using the solid-state imaging device 11 of the fifth embodiment as an example.
  • an insulating layer is formed on the upper surface of the light-receiving surface serving as a substrate, and a metal film made of aluminum is coated on the entire surface of the insulating layer by sputtering (Physical Vapor Deposition (PVD)).
  • PVD Physical Vapor Deposition
  • a photomask is coated on the entire upper surface of the metal film.
  • a positive resist can be used for the photomask, and the resist is applied and baked.
  • a metal pattern corresponding to the plasmon resonator is transferred to the resist in the imaging region 52, and a light shielding metal pattern is transferred to the resist in the optical black region 53.
  • ArF ArF
  • F2 excimer laser F2 excimer laser
  • EUV Extreme Ultra Violet Lithography
  • EUVL Electron Projection Lithography
  • Lithography using X-ray lithography or the like is preferable.
  • electron beam lithography that directly draws with an electron beam.
  • the plasmon resonator structure is selectively covered with a dielectric by a mask process. Then, the color filter layer 82 and the on-chip microlens 81 are stacked to obtain the solid-state imaging device 12.
  • one or a plurality of dielectric films are finely processed by a thermal cycle nanoimprint method or an optical nanoimprint method, and a metal layer is filled in a groove portion formed by the fine processing, You may employ
  • CMOS solid-state imaging device manufacturing process a method for mounting a spectral filter using a plasmon resonator using aluminum used as a signal wiring layer or a light shielding film in a general CMOS solid-state imaging device manufacturing process is described.
  • metals other than aluminum for example, an alloy of Al and Cu, an alloy of Al and Si, Cu, W, Ag, Ta, or the like may be used.
  • the light shielding region (for example, a region that covers the optical black region 53 with the light shielding region layer 83 in FIG. 8) is realized by not providing a periodic opening with a metal pattern. Omitted.
  • the plasmon resonator is a metal structure in which holes (through holes 63A and 63B) are formed by fine processing at a predetermined cycle as shown in FIGS. 1A and 1B, or FIG. 1C.
  • this plasmon resonator structure is based on a structure in which a metal thin film is disposed on a pixel via an insulating layer made of a silicon oxide film or a silicon nitride film.
  • a photoelectric conversion element it is not limited to a CMOS type solid-state image sensor, A CCD type solid-state image sensor may be sufficient, and arbitrary elements may be employ
  • the solid-state imaging device of the present invention can be applied to a camcorder or an information terminal device equipped with a digital still camera or an imaging device.
  • a plasmon filter may be employed as the color filter provided in the imaging region.
  • a solid-state imaging device is arranged on a light receiving surface of each light receiving element in a pair with a light receiving element (photoelectric conversion element layer 84) arranged in a two-dimensional matrix.
  • a metal optical filter (light shielding region layer 83) that transmits light of a predetermined wavelength, and at least a part of the metal optical filter includes a metal film (metal thin film 62A) and the metal film (metal thin film) periodically. 62A) and a high refractive index material having a higher refractive index than SiO 2 and covering the metal film (metal thin film 62A), or the high refractive index.
  • a high refractive index layer (dielectric layer 65A) made of a refractive index material and a metal island 64A arranged in the high refractive index layer with a period of less than the predetermined wavelength.
  • the selected wavelength region can be expanded by using a high refractive index material having a refractive index higher than that of SiO 2 for at least some of the metal optical filters. Accordingly, various wavelengths can be set depending on the type of highly refractive material, so that the difference in filter area for each wavelength can be reduced, and a solid-state imaging device equipped with an optical filter that can cope with pixel miniaturization is realized. Can do.
  • the size of the holes or the islands of at least some of the light receiving elements may be the same. Even in this case, it is possible to set various wavelengths for transmission depending on the type of high refractive material, so that the area difference of the filter for each wavelength can be reduced, and a solid-state imaging device equipped with an optical filter corresponding to pixel miniaturization is realized. can do.
  • the high refractive index material may be any one of TiO 2 , Si 3 N 4 , SiN, Ta 2 O 5 , AlSi, AlN, Al 2 O 3 , HfO 2 , MgO, and ZrO 2. It is preferable to include.
  • the metal film or the island includes any one of Al, an alloy of Al and Cu, an alloy of Al and Si, Cu, W, Ag, Au, and Ta.

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Optical Filters (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Color Television Image Signal Generators (AREA)

Abstract

　La présente invention a pour objet de réaliser un dispositif d'imagerie monolithique avec lequel la différence de surface entre les filtres de chaque longueur d'onde est réduite et un filtre optique qui prend en charge la miniaturisation des pixels est monté. À cet effet, le dispositif d'imagerie monolithique selon l'invention est caractérisé en ce qu'il comprend : des éléments récepteurs de lumière disposés en forme de matrice bidimensionnelle ; et des filtres optiques métalliques pour transmettre de la lumière à une longueur d'onde prescrite, les filtres optiques métalliques étant disposés sur les surfaces de réception de lumière des éléments récepteurs de lumière correspondants selon un arrangement face à face avec les éléments récepteurs de lumière ; au moins certains des filtres optiques métalliques possédant des membranes métalliques, des trous disposés à intervalles donnés dans les membranes métalliques et un matériau fortement réfractif qui possède un indice de réfraction supérieur à celui du SiO2, le matériau fortement réfractif couvrant les membranes métalliques, ou possédant une couche fortement réfractive comprenant le matériau fortement réfractif, et des îlots métalliques disposés sur la couche fortement réfractive à des intervalles qui sont plus petits que la longueur d'onde prescrite.
PCT/JP2014/060778 2013-06-14 2014-04-16 Dispositif d'imagerie monolithique Ceased WO2014199720A1 (fr)

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