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WO2014190604A1 - 量子点彩色滤光片及其制作方法、显示装置 - Google Patents

量子点彩色滤光片及其制作方法、显示装置 Download PDF

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Publication number
WO2014190604A1
WO2014190604A1 PCT/CN2013/080039 CN2013080039W WO2014190604A1 WO 2014190604 A1 WO2014190604 A1 WO 2014190604A1 CN 2013080039 W CN2013080039 W CN 2013080039W WO 2014190604 A1 WO2014190604 A1 WO 2014190604A1
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Prior art keywords
sub
pixel
quantum dot
color
pixels
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English (en)
French (fr)
Inventor
李琳
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Priority to US14/373,823 priority Critical patent/US9507206B2/en
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Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133617—Illumination with ultraviolet light; Luminescent elements or materials associated to the cell
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/003—Light absorbing elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/201—Filters in the form of arrays
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/208—Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133621—Illuminating devices providing coloured light
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133624—Illuminating devices characterised by their spectral emissions
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/108—Materials and properties semiconductor quantum wells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/36—Micro- or nanomaterials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
    • Y10S977/774—Exhibiting three-dimensional carrier confinement, e.g. quantum dots
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/832—Nanostructure having specified property, e.g. lattice-constant, thermal expansion coefficient
    • Y10S977/834—Optical properties of nanomaterial, e.g. specified transparency, opacity, or index of refraction

Definitions

  • Quantum dot color filter manufacturing method thereof, and display device
  • Embodiments of the present invention relate to a quantum dot color filter, a method of fabricating the same, and a display device including the quantum dot color filter. Background technique
  • TFT-LCD Thin Film Transistor-Liquid Crystal Display
  • OLED organic light-emitting diode
  • quantum dot displays Due to the extremely narrow wavelength range of Quantum Dots, the color is very pure, and fine adjustment is possible. Compared with the current display, the new quantum dot display greatly improves brightness and vividness while reducing Energy consumption.
  • Quantum dots are tiny semiconductor nanocrystals that are invisible to the naked eye. They can be composed of rhodium, cadmium, selenium and gram atoms. The diameter of the particles in the crystal is less than 10 nm. Quantum dots have a distinctive property: they glow when illuminated by electricity or light, producing bright and solid colors, and the color of the emitted light is determined by the material and size of the quantum dots. The smaller the size, the more blue light is deflected, and the larger the light is toward red light. If the calculation is accurate, the quantum dots emit bright red, green and blue light, which is used as the RGB three primary color source of the display.
  • Embodiments of the present invention provide a quantum dot color filter, a manufacturing method thereof, and a display device, which overcome the defects of limited color gamut of the existing color filter, affecting product display quality and high production cost.
  • An aspect of the invention provides a quantum dot color filter comprising: a substrate substrate; a pixel layer disposed on the substrate of the substrate, comprising a plurality of pixels, wherein each pixel comprises a plurality of color sub-pixels of different colors And at least one of the color sub-pixels is formed of a quantum dot material, and the color of the light generated by the excitation of the incident light is the same as the color of the corresponding color sub-pixel; and is disposed on the substrate
  • the filter layer corresponding to the color sub-pixel arrangement formed by the quantum dot material, is for absorbing incident light that is not excited by the quantum dot material and transmitted through the color sub-pixel.
  • the filter layer may have a thickness of 0.2 ⁇ m to 0.7 ⁇ m.
  • the pixel may include a red sub-pixel formed of a red quantum dot material, and a green sub-pixel formed of a green quantum dot material; the blue sub-pixel; Formed from a blue quantum dot material or formed of a transparent material.
  • the color sub-pixel may further include a yellow sub-pixel formed of a yellow quantum dot material.
  • the color filter may further include a black matrix for separating color sub-pixels of different colors.
  • the color filter may further include a protective layer covering the pixel and the black matrix, and the protective layer is a transparent material.
  • the quantum dot material may be sulfurized, oxidized, gallium nitride, selenium, cadmium sulfide, gallium selenide, cadmium selenide, bismuth, cadmium telluride, gallium arsenide, indium phosphide, At least one of lead telluride.
  • Another aspect of the present invention also provides a display device comprising the above quantum dot color filter and a backlight, wherein a wavelength of light emitted by the backlight is smaller than a quantum dot material in the color filter is excited The wavelength of the light produced.
  • the backlight may be a blue backlight;
  • the red sub-pixel in the quantum dot color filter is formed of a red quantum dot material, and the green sub-pixel is formed of a green quantum dot material, the blue
  • the color sub-pixel is formed of a transparent material, the blue sub-pixel region is not provided with the filter layer, and the other color sub-pixel regions are each provided with a filter layer, and the filter layer absorbs blue light.
  • the backlight may be a blue light emitting diode, and the wavelength range of the emitted light is 440 ⁇ 455 ⁇ ; the light absorbing layer absorbs light in the range of 440 ⁇ 455nm.
  • the backlight may be an ultraviolet backlight
  • the red sub-pixel in the color filter is formed by a red quantum dot material
  • the green sub-pixel is formed by a green quantum dot material
  • the blue sub-pixel is composed of A blue quantum dot material is formed, and each of the color sub-pixel regions is provided with a filter layer, and the filter layer absorbs ultraviolet light.
  • a still further aspect of the present invention provides a method of fabricating a quantum dot color filter, the color filter comprising a plurality of pixels, each pixel being composed of a plurality of color sub-pixels of different colors, the method comprising: forming a pattern of the filter layer; a pattern of colored sub-pixels, wherein the color sub-pixel regions of different colors form color sub-pixels by the quantum dot material of the corresponding color.
  • the method can also include: forming a black matrix; and/or forming a protective layer.
  • the method may further include: forming a pattern of the filter layer, wherein the blue sub-pixel region of the color filter is not provided with a filter layer; forming a black matrix, the different color sub-pixel regions separated by the black matrix Forming a red sub-pixel through a red quantum dot material in a red sub-pixel region of the color filter, and forming a green sub-pixel through a green quantum dot material in a green sub-pixel region of the color filter, in the color filter
  • the blue sub-pixel region of the light sheet forms a blue sub-pixel through a transparent material.
  • the method may further include: forming a pattern of the filter layer, wherein the color sub-pixel regions are each provided with a filter layer; forming a black matrix, the black matrix separating different color sub-pixel regions;
  • the red sub-pixel region of the color filter forms a red sub-pixel through the red quantum dot material
  • the green sub-pixel region forms a green sub-pixel through the green quantum dot material in the green sub-pixel region of the color filter, and the blue color of the color filter
  • the color sub-pixel region forms a blue sub-pixel through the blue quantum dot material.
  • the transparent material of the blue sub-pixel region may be formed simultaneously with the protective layer.
  • the pixel may also include a yellow sub-pixel formed by a yellow quantum dot material.
  • FIG. 1 is a schematic structural diagram of a quantum dot color filter according to Embodiment 1 of the present invention
  • FIG. 2 is a schematic structural diagram of another quantum dot color filter according to Embodiment 1 of the present invention
  • FIG. 4 is a schematic structural diagram of a quantum dot color filter according to Embodiment 3 of the present invention
  • FIG. 5 is a schematic structural diagram of a display device according to Embodiment 4 of the present invention
  • FIG. 6 is a structural view of another display device according to Embodiment 4 of the present invention.
  • FIG. 7 is a flow chart of a method for fabricating a quantum dot color filter according to Embodiment 5 of the present invention. Reference mark:
  • 11 base substrate; 12: filter layer; 13: black matrix; 14: pixel layer; 14R: red sub-pixel; 14G: green sub-pixel; 14B: blue sub-pixel; 14Y: yellow sub-pixel; Layer; 10: color filter; 20: array substrate; 30: liquid crystal layer; 40: backlight; 50: blue light; 60: RGB light; 70: light panel; 80: ultraviolet light.
  • the present embodiment provides a color filter including a substrate substrate 11 and a pixel layer 14 disposed on the substrate substrate 11.
  • the pixel layer 14 includes a plurality of pixels, each of which includes a plurality of pixels. Colored subpixels of different colors. These color sub-pixels of different colors are, for example, red, green and blue (RGB) sub-pixels 14R, 14G, 14B.
  • the color filter further includes a filter layer 12 disposed on the base substrate 11.
  • the base substrate 11 may be any transparent material such as a glass substrate, quartz, or resin. At least one color sub-pixel in each pixel is formed of a quantum dot material that is excited by incident light to produce a color having the same color as the corresponding color sub-pixel.
  • the filter layer 12 is disposed corresponding to a color sub-pixel region formed of a quantum dot material for absorbing incident light of the unexcited quantum dot material transmitted through the color sub-pixel. As shown in FIG. 1, the filter layer 12 is disposed between the base substrate 11 and the color sub-pixels of the pixel layer 14. For exciting incident light, for example, from a set light source, such as The backlight of the device.
  • the filter layer 12 and the pixel layer 14 may be respectively disposed on different sides of the base substrate 11, as long as the light emitted from the pixel layer 14 passes through the filter layer 14.
  • the pixel layer 14 can be formed directly on the substrate substrate 11.
  • the color sub-pixels in one pixel may include a red sub-pixel 14R, a green sub-pixel 14G, and a blue sub-pixel 14B.
  • the red sub-pixel 14R is formed of a red quantum dot material
  • the green sub-pixel 14G is formed of a green quantum dot material
  • the blue sub-pixel 14B is formed of a blue quantum dot material.
  • Quantum dots are extremely tiny semiconductor nanocrystals that are invisible to the naked eye, such as a combination of cadmium, cadmium, selenium, and sulfur atoms.
  • the diameter of the particles in the crystal is, for example, less than 10 nanometers.
  • Quantum dots have a distinctive property: they glow when illuminated by electricity or light, producing bright and solid colors, and the color of the emitted light is determined by the material and size of the quantum dots.
  • the quantum dots in this embodiment may be sulfurized, oxidized, gallium nitride, selenium, cadmium, gallium selenide, cadmium selenide, bismuth, cadmium telluride, gallium arsenide, indium phosphide At least one of lead telluride.
  • the material of the quantum dot includes, but is not limited to, the above-listed ones, and other materials having the same or similar materials as those described above are also applicable.
  • the quantum dots emitting red light are mainly about 9 ⁇ 10 nm
  • the size of the emitted yellow light quantum dots is about 8 nm
  • the size of the quantum dots emitting green light is about 7 nm.
  • CdSe cadmium selenide
  • a filter layer that can absorb the backlight is provided on the base substrate of, for example, a glass substrate.
  • Light from incident light such as a backlight first passes through a color sub-pixel formed by a quantum dot material, and incident light from the backlight excites the quantum dot material to emit light of a corresponding color, passing through the color sub-pixel and not exciting the light of the quantum dot material It is filtered while passing through the filter layer, and the corresponding color of light emitted by the quantum dot material can pass through the filter layer.
  • the use of quantum dots to display the physical characteristics of different color fluorescence under the illumination of the backlight forms a color filter, which improves the transmittance of the color filter, greatly enhances and enriches the brightness and color of the picture, and effectively improves the brightness.
  • the display quality of the image enhances the user's experience while minimizing production costs.
  • the thickness of the filter layer 12 can be set to 0.2 to 0.7 ⁇ m.
  • the material of the filter layer 12 is, for example, an ultraviolet light absorber. UV absorbers need to be selected according to the wavelength range of the light emitted by the backlight, UV absorption
  • the filter layer formed by the agent can effectively absorb the ultraviolet light passing through the color sub-pixel region but not the quantum dot material, and can transmit visible light (RGB visible light) emitted from the quantum dot material.
  • the ultraviolet light absorber may be a salicylate, a benzophenone, a benzotriazole, a substituted acrylonitrile, a triazine, or a hindered amine.
  • a salicylate a benzophenone
  • a benzotriazole a substituted acrylonitrile
  • a triazine or a hindered amine.
  • phenyl hydroxybenzoate 2-(2,-hydroxy-5,-nonylphenyl)benzotriazole, 2,4-dihydroxydibenzophenone, 2-hydroxy-4-indole Oxydibenzophenone and the like.
  • the quantum dot color filter in this embodiment can effectively absorb the light emitted by the unexcited quantum dot material in the backlight light and transmitted through the color sub-pixel by providing a filter layer made of the ultraviolet light absorber, but The light corresponding to the color sub-pixel passes, which enhances the color saturation of the color sub-pixel, thereby improving the display quality.
  • the color filter may further include a black matrix 13 and a protective layer 15.
  • the black matrix 13 is used to separate the color sub-pixels 14R, 14G and 14B of different colors, prevent background light leakage, improve display contrast, prevent color mixing and increase color purity;
  • the protective layer 15 covers the pixel layer 14 and the black matrix 13 for protection The color sub-pixel and the black matrix, the protective layer 15 is a transparent material.
  • each of the pixels may further include a yellow sub-pixel 14Y formed of a yellow quantum dot material.
  • the yellow sub-pixel region is also provided with a filter layer 12. Please refer to Figure 2 for this example.
  • a display device including the color filter 10, the array substrate 20, and the backlight 40 in the first embodiment.
  • a liquid crystal layer 30 is formed between the color filter 10 and the array substrate 20 to form a liquid crystal panel.
  • the backlight 40 is an ultraviolet backlight that emits ultraviolet light 80 and is, for example, a direct type backlight.
  • the red sub-pixel 14R of the color filter 10 is formed of a red quantum dot material
  • the green sub-pixel 14G is formed of a green quantum dot material
  • the blue sub-pixel 14B is formed of a blue quantum dot material
  • each color sub-pixel region is provided with
  • the filter layer 12 the filter layer 12 is used to absorb the unexcited quantum dot material and pass through the ultraviolet light 80 of the color sub-pixel.
  • the pixel layer 14 of the color filter 10 is closer to the backlight 40 than the filter layer 12.
  • the filter layer 12 may be located inside the substrate 11 or on the outside thereof.
  • the ultraviolet light 80 emitted by the ultraviolet backlight 40 in this embodiment first passes through the color sub-pixels 14R, 14G, and 14B formed by the quantum dot material, and the ultraviolet light 80 excites the quantum dot material to emit light of a corresponding color.
  • the ultraviolet light 80 that excites the quantum dot material and is transmitted through the color sub-pixel is filtered while passing through the filter layer 12, but the corresponding color of light emitted by the quantum dot material (ie, red light, green light) And blue light) can pass through the filter layer 12.
  • the ultraviolet light 80 emitted from the ultraviolet backlight 40 passes through the red sub-pixel 14R, the green sub-pixel 14G and the blue sub-pixel 14B formed of the quantum dot material of the color filter 10 to be converted into red, green and blue outgoing light 60, respectively.
  • the ultraviolet light 80 that is transmitted through the color sub-pixels without being excited by the quantum dot material is absorbed by the filter layer 12. Thereby, the color light transmission of the quantum dot color filter 10 is achieved.
  • the display device can be a liquid crystal display, an organic light emitting diode (OLED), a liquid crystal panel, a liquid crystal computer, or other display device.
  • the display device adopts the color filter in the embodiment to greatly enhance and enrich the brightness and color of the picture, thereby effectively improving the display quality of the image and enhancing the user's sense of experience.
  • the present embodiment provides a color filter including a base substrate 11 and a pixel layer 14 disposed on the base substrate 11.
  • the pixel layer 14 includes a plurality of pixels, each of which includes a plurality of different pixels. Color subpixels of color. These color sub-pixels of different colors are, for example, red, green, and blue sub-pixels.
  • the color filter further includes a filter layer 12 disposed on the base substrate 11.
  • the base substrate 11 may be any transparent material such as a glass substrate, quartz, or resin. At least one of the color sub-pixels in each of the pixels is formed of a quantum dot material, and the color of the light generated by the quantum dot material after being excited by the incident light is the same as the color of the corresponding color sub-pixel.
  • the filter layer 12 is disposed corresponding to a color sub-pixel region formed of a quantum dot material for absorbing light that is not excited by the quantum dot material but transmitted through the color sub-pixel. As shown in Fig. 4, the filter layer 12 is disposed between the base substrate 11 and the color sub-pixels. For exciting the incident light, for example, from a set light source, such as a backlight of a display device.
  • a set light source such as a backlight of a display device.
  • the filter layer 12 and the pixel layer 14 may be respectively disposed on different sides of the base substrate 11, as long as the light emitted from the pixel layer 14 passes through the filter layer 14.
  • the pixel layer 14 can be formed directly on the substrate substrate 11.
  • the pixels in this embodiment include a red sub-pixel 14R, a green sub-pixel 14G, and a blue sub-pixel.
  • the red sub-pixel 14R is formed of a red quantum dot material
  • the green sub-pixel 14G is formed of a green quantum dot material
  • the blue sub-pixel 14B is formed of a transparent material.
  • the quantum dots may be sulfurized, oxidized, gallium nitride, selenium, cadmium sulfide, gallium selenide, cadmium selenide, bismuth, cadmium telluride, gallium arsenide, indium phosphide, At least one of lead telluride, of course, the material of the quantum dot includes, but is not limited to, the substances listed above, and others have The same or similar materials as described above are equally applicable.
  • the size of quantum dots emitting red light is mainly about 9-10 nm
  • the size of the emitted yellow light quantum dots is about 8 nm
  • the size of quantum dots emitting green light is about 7 nm.
  • a filter layer 12 that can absorb the backlight is disposed on a substrate such as a glass substrate.
  • the wavelength of the light emitted by the backlight is less than the wavelength of the light generated by the quantum dot material in the color filter being excited.
  • the thickness of the filter layer is 0.2 to 0.7 ⁇ m.
  • the material of the filter layer 12 is, for example, a yellow photosensitive resin composition, which may include an alkali-soluble resin, a polymerizable monomer, an initiator, a yellow pigment, a solvent, and the like, for example, an alkali-soluble resin, a polymerizable monomer, an initiator, Composition of yellow pigments, dispersants, additives and solvents.
  • a yellow photosensitive resin composition which may include an alkali-soluble resin, a polymerizable monomer, an initiator, a yellow pigment, a solvent, and the like, for example, an alkali-soluble resin, a polymerizable monomer, an initiator, Composition of yellow pigments, dispersants, additives and solvents.
  • the alkali-soluble resin may be a mercaptoacrylic alkali-soluble resin, for example, decyl methacrylate, n-butyl methacrylate, methacrylic acid, decyl acrylate, butyl acrylate, ethyl acrylate, hydroxyethyl acrylate
  • the alkali-soluble resin prepared by ester, ethylene glycol diacrylate, diethanol glycol diacrylate, ethylene glycol dimercaptoacrylate, or the like may have a molecular weight of about 4,000 to 20,000.
  • the group monomer for example, dipentaerythritol hexaacrylate, dipropylene glycol diacrylate, tripropylene glycol diacrylate, trihydroxydecyl propane triacrylate, trishydroxyhydropropane tetraacrylate, or the like.
  • the photoinitiator may be a radical photoinitiator or a cationic photoinitiator, or a combination of a radical photoinitiator and a cationic photoinitiator, for example, 1-hydroxy-cyclohexylbenzophenone, 2-hydroxyl 2-mercapto-1-phenyl-1-propanone, 2-mercapto-1-(4-mercaptophenyl)-2-morpholine-1-propanone, 2,4,6-trimercaptobenzene Diethyl decanoyl phosphate, 2,4,6-trimercaptobenzoyldiphenylphosphine oxide, and the like.
  • a radical photoinitiator or a cationic photoinitiator for example, 1-hydroxy-cyclohexylbenzophenone, 2-hydroxyl 2-mercapto-1-phenyl-1-propanone, 2-mercapto-1-(4-mercaptophenyl)-2-morpholine-1-propanone, 2,4,6-trimer
  • the yellow pigment may be an azo type, an azo condensation type, and a heterocyclic type, for example, PY1, PY12, ⁇ . ⁇ .3, PY13, ⁇ . ⁇ .83, ⁇ . ⁇ .93, ⁇ . ⁇ .94, ⁇ . ⁇ .95, PY109, PY126, PY127, PY138, PY139, PY139, PY147, PY150, PY174, PY180, etc.
  • the solvent may be ethylene glycol monoterpene ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, diethylene glycol diethyl ether ethyl acetate, ethyl ketone, decyl isophthalate
  • ethylene glycol monoterpene ether ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, diethylene glycol diethyl ether ethyl acetate, ethyl ketone, decyl isophthalate
  • the dispersing agent may be a known pigment such as BYK, solsperse, EFKA, Ajinomoto or the like. Wet dispersant.
  • the auxiliary agent may be an adhesion promoter, an antioxidant, a flocculating agent, a leveling agent, an antifoaming agent, etc., and may be added as needed.
  • the solid content of the alkali-soluble resin accounts for 10 to 30%
  • the solid content of the polymerizable monomer (or photocurable resin) accounts for 10 to 30%
  • the solid content of the photoinitiator accounts for 1 to 20%
  • Pigments account for 10 to 40%.
  • the quantum dot color filter of the present embodiment can effectively absorb the light emitted by the unexcited quantum dot material in the light emitted by the backlight by providing a filter layer made of the yellow photosensitive resin composition, so that the color is made The light corresponding to the sub-pixel passes, which enhances the color saturation of the color sub-pixel, thereby improving the display quality.
  • the color filter further includes a black matrix 13 and a protective layer 15.
  • the black matrix 13 is used to separate color sub-pixels of different colors, prevent background light leakage, improve display contrast, prevent color mixing and increase color purity;
  • the protective layer 15 covers the pixel layer 14 and the black matrix 13 for protecting color sub-pixels and black Matrix, the protective layer is a transparent material.
  • each pixel may further include a yellow sub-pixel 14Y formed of a yellow quantum dot material.
  • a filter layer 12 is also provided in the yellow sub-pixel region.
  • the embodiment provides a display device including the color filter 10, the array substrate 20, and the backlight 40 in the third embodiment.
  • the wavelength of the blue light 50 emitted by the backlight 40 is smaller than the wavelength of the light generated by the quantum dot material in the sub-pixel of the color filter 10.
  • the backlight 40 is, for example, a direct type backlight.
  • the backlight 40 in this embodiment is a blue backlight, such as a blue light emitting diode, which emits blue light having a wavelength range of 440 to 455 nm; and the filter layer 12 absorbs light in the range of 440 to 455 nm.
  • the blue light 50 emitted by the blue backlight 40 in this embodiment first passes through the color sub-pixels and then passes through the filter layer 12, and the filter layer 12 filters out the color sub-pixels but does not excite the quantum dot material. Background light.
  • Each of the pixels may include a red sub-pixel 14R, a green sub-pixel 14G, and a blue sub-pixel 14B.
  • the red sub-pixel 14R is formed of a red quantum dot material
  • the green sub-pixel 14G is formed of a green quantum dot material
  • the blue sub-pixel 14B is formed of a transparent material.
  • Blue sub-pixel area 14B is not provided with a filter layer 12.
  • the other color sub-pixel regions are each provided with a filter layer, and the filter layer 12 absorbs the blue light 50.
  • the blue light 50 passes through the red sub-pixel 14R and the green sub-pixel 14G formed by the quantum dot material, and the excited quantum dot material emits red light and green light respectively.
  • the red light and the green light can pass through the filter light layer 12, and pass through the red sub-pixel 14R and the green sub-pixel.
  • the blue light 50 of the pixel 14B but not the quantum dot material is filtered by the filter layer 12; the blue light 50 itself is emitted through the blue sub-pixel 14B formed of a transparent material, and is still blue light.
  • the material of the filter layer 12 is, for example, a yellow photosensitive resin composition composed of an alkali-soluble resin, a polymerizable monomer, an initiator, a yellow pigment, a dispersant, an additive, and a solvent.
  • the filter layer 12 in this embodiment absorbs light in the range of 440-455 nm and can transmit color light in the 490-760 nm region. Since the center wavelength of the red light is 630 nm, the red light portion can pass through the yellow filter layer, and the red portion can be Through transmission, the blue portion is absorbed by the filter layer 12; and the center wavelength of the green light is 550 nm, so after the green blue light passes through the yellow filter layer, the green portion is still transparent, and the blue portion is absorbed by the yellow filter layer.
  • the corresponding red, green, and blue sub-pixels respectively emit red, green, and blue outgoing light 60, thereby realizing quantum dots.
  • the blue sub-pixel is made of a transparent material.
  • the color filter in this embodiment can also be applied to an organic light emitting diode (OLED), and the light emitting panel (such as a blue light emitting OLED panel) 70 replaces the backlight 40.
  • OLED organic light emitting diode
  • an embodiment of the present invention provides a process for fabricating a color filter structure in Embodiment 1.
  • the color filter includes a plurality of pixels, and each pixel is composed of a plurality of color sub-pixels of different colors.
  • the method includes the following steps.
  • Step S10 forming a pattern of the filter layer.
  • a filter layer film is formed on a base substrate, and a pattern of the filter layer is formed by a patterning process.
  • the filter layer film is formed by coating, sputtering, depositing or otherwise forming on the base substrate, the substrate is exposed by a mask, and a pattern of the filter layer is formed by a process such as development.
  • the thickness of the film may be 0.2 to 0.7 ⁇ m.
  • Step S20 forming a black matrix, the different color sub-pixel regions separated by the black matrix.
  • a black photoresist is spin-coated or scraped, and after exposure and development, it is baked to form a black matrix pattern defining a pixel region.
  • Step S30 forming a pattern of color sub-pixels on the base substrate on which the above steps are completed.
  • a red sub-pixel is formed by a red quantum dot material in a red sub-pixel region of the color filter
  • a green sub-pixel is formed by a green quantum dot material in a green sub-pixel region of the color filter
  • a blue color filter is formed in the color filter.
  • the sub-pixel region forms a blue sub-pixel through the blue quantum dot material.
  • a red quantum dot material and a green quantum dot material and a blue quantum dot material are transferred to a relevant region defined by a black matrix by a transfer or printing method.
  • Step S40 applying a protective layer to the film layer after the completion of step S3 by a spin coating process.
  • the embodiment of the present invention does not limit the sequence of the process steps. For example, a black matrix may be formed first, and the black matrix separates different color sub-pixel regions; and a pattern of the filter layer is formed, and the filter layer is formed by the quantum dot material. The color sub-pixels are set; then the graphics and protective layers of the color sub-pixels are formed.
  • a black matrix may be formed first, and a pattern and a protective layer of the color sub-pixel are sequentially formed; finally, a filter layer is formed on the other side of the base substrate. .
  • a filter layer is formed on one side of the base substrate, and then a black matrix, a pattern of color sub-pixels, and a protective layer are sequentially formed on the other side of the base substrate.
  • the color filter produced by the method of the embodiment requires an ultraviolet backlight to be used in a practical application.
  • An embodiment of the present invention provides a process for fabricating a color filter structure in Embodiment 3.
  • the color filter includes a plurality of pixels, each pixel is composed of a plurality of color sub-pixels of different colors, and the method includes the following steps. .
  • Step S10 forming a pattern of the filter layer.
  • a filter layer film is formed on a base substrate, and a pattern of the filter layer is formed by a patterning process.
  • the filter layer film is formed by coating, sputtering, depositing or otherwise forming on the base substrate, the substrate is exposed by a mask, and a pattern of the filter layer is formed by a process such as development.
  • the thickness of the film may be 0.2 to 0.7 ⁇ m.
  • Step S20 forming a black matrix, the different color sub-pixel regions separated by the black matrix.
  • a black photoresist is spin-coated or scraped, and after exposure and development, it is baked to form a black matrix pattern defining a pixel region.
  • Step S30 forming a pattern of color sub-pixels on the base substrate on which the above steps are completed.
  • a red sub-pixel is formed by a red quantum dot material in a red sub-pixel region of the color filter
  • a green sub-pixel is formed by a green quantum dot material in a green sub-pixel region of the color filter
  • a blue color filter is formed in the color filter.
  • the sub-pixel region forms a blue sub-pixel through a transparent material.
  • a red quantum dot material and a green quantum dot material and a blue quantum dot material are transferred to a relevant region defined by a black matrix by a transfer or printing method.
  • the transparent protective layer can be completed in the same step as the transparent blue sub-pixel.
  • the embodiment of the present invention does not limit the sequence of process steps.
  • the specific content is the same as that in the fifth embodiment, and will not be repeated here.
  • the color filter produced by the process of the embodiment requires a blue backlight for the application in practical applications.

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Abstract

一种量子点彩色滤光片包括：衬底基板（11）；设置在衬底基板（11）上的像素层（14），包括多个像素，其中，每个像素包括若干不同颜色的彩色子像素（14R，14G，14B），并且至少一个彩色子像素（14R，14G，14B）由量子点材料形成，量子点材料被入射光（80）激发后产生的光的颜色与对应的彩色子像素（14R，14G，14B）的颜色相同；设置在衬底基板（11）上的滤光层（12），对应于由量子点材料形成的彩色子像素（14R，14G，14B）设置，用于吸收未激发量子点材料而透射过彩色子像素（14R，14G，14B）的入射光（80）。提供的量子点彩色滤光片提高了透过率，提高和丰富了画面的亮度和色彩。还提供了一种关于此量子点彩色滤光片的制作方法和显示装置。

Description

量子点彩色滤光片及其制作方法、 显示装置 技术领域
本发明的实施例涉及一种量子点彩色滤光片及其制作方法以及包括该量 子点彩色滤光片的显示装置。 背景技术
随着科技的发展，液晶显示器技术也随之不断完善。 TFT-LCD( Thin Film Transistor-Liquid Crystal Display, 薄膜场效应晶体管-液晶显示器） 以其图像 显示品质好、 能耗低、 环保等优势占据着显示器领域的重要位置， 但是其色 彩很难覆盖完全的色域。 近几年兴起的基于有机发光二极管 （OLED ) 的显 示技术也日益成熟， OLED显示器构造筒单， 厚度薄， 响应速度快， 可以实 现更加丰富的色彩。 而且， 随着量子点的诞生， 量子点显示器也应运而生。 由于量子点 （Quantum Dots )发光波长范围极窄， 颜色非常纯粹， 还可实现 精细调节， 与目前的显示屏相比， 新的量子点显示屏大大提高了亮度和画面 鲜艳度的同时， 还减少了能耗。
量子点是一些肉眼无法看到的、 极其微小的半导体纳米晶体， 可由辞、 镉、硒和克原子组合而成， 晶体中的颗粒直径不足 10纳米。 量子点有一个与 众不同的特性： 当受到电或光刺激时就会发光， 产生亮光和纯色， 发出的光 线颜色由量子点的组成材料和大小所决定。 尺寸越小越偏向蓝光、 越大越偏 向红光。 如果计算精确， 量子点就可发出鲜艳的红绿蓝光， 正好用作显示器 的 RGB三原色光源。
传统的 LCD显示器， 由于需要扩大色域范围， 就得提高彩色滤光片的 色彩纯度， 但这会同时降低彩色滤光片的透光率， 因此需要提高背光源的亮 度， 但是这增加了 LCD 的功耗。 现有将量子点用于液晶显示器的背光源， 可以在不增加彩色滤光片色彩浓度的情况下提高色彩的纯度， 功耗也不会提 高 4艮多。 因此， 量子点的应用于显示器已经逐渐成为趋势。 发明内容 本发明实施例提供了一种量子点彩色滤光片及其制作方法、 显示装置， 以克服现有彩色滤光片的色域有限， 影响产品显示品质以及生产成本较高等 缺陷。
本发明的一个方面提供一种量子点彩色滤光片包括： 村底基板； 设置在 所述村底基板上的像素层， 包括多个像素， 其中， 每个像素包括若干不同颜 色的彩色子像素， 并且至少一个所述彩色子像素由量子点材料形成， 所述量 子点材料被入射光激发后产生的光的颜色与对应的所述彩色子像素的颜色相 同； 设置在所述村底基板上的滤光层， 对应于由量子点材料形成的彩色子像 素设置，用于吸收未激发所述量子点材料而透射过所述彩色子像素的入射光。
例如， 所述滤光层的厚度可以为 0.2μηι ~0.7μηι。 例如， 所述像素可以包括红色子像素、 绿色子像素和蓝色子像素， 所述 红色子像素由红色量子点材料形成，所述绿色子像素由绿色量子点材料形成； 所述蓝色子像素由蓝色量子点材料形成或由透明材料形成。 例如， 所述彩色 子像素还可以包括黄色子像素， 所述黄色子像素由黄色量子点材料形成。
例如， 所述彩色滤光片还可以包括黑矩阵， 所述黑矩阵用于分隔不同颜 色的彩色子像素。
例如， 所述彩色滤光片还可以包括保护层， 所述保护层覆盖所述像素和 所述黑矩阵， 所述保护层为透明材料。
例如， 所述量子点材料可以为硫化辞、 氧化辞、 氮化镓、 硒化辞、 硫化 镉、 硒化镓、 硒化镉、 碲化辞、 碲化镉、 砷化镓、 磷化铟、 碲化铅中的至少 一种。
本发明的另一方面还提供一种显示装置， 包括上述的量子点彩色滤光片 和背光源， 所述背光源发出的光线的波长小于所述彩色滤光片中的量子点材 料被激发后产生的光线的波长。
例如， 所述背光源可以为蓝色背光源； 所述量子点彩色滤光片中的所述 红色子像素由红色量子点材料形成，所述绿色子像素由绿色量子点材料形成， 所述蓝色子像素由透明材料形成， 所述蓝色子像素区域未设置所述滤光层， 其他所述彩色子像素区域均设置有滤光层， 所述滤光层吸收蓝色光。
例如， 所述背光源可以为蓝色发光二极管， 发射光线的波长范围为 440~455匪； 所述吸光层吸收 440~455nm范围内光线。
例如， 所述背光源可以为紫外背光源； 所述彩色滤光片中所述红色子像 素由红色量子点材料形成， 所述绿色子像素由绿色量子点材料形成， 所述蓝 色子像素由蓝色量子点材料形成 ,每个所述彩色子像素区域均设置有滤光层， 所述滤光层吸收紫外光。
本发明的再一方面还提供一种量子点彩色滤光片的制作方法， 所述彩色 滤光片包括多个像素， 每个像素由若干不同颜色的彩色子像素组成， 所述方 法包括： 形成滤光层的图形； 形成彩色子像素的图形， 其中， 不同颜色的彩 色子像素区域通过相对应颜色的量子点材料形成彩色子像素。
例如， 该方法还可以包括： 形成黑矩阵； 和 /或形成保护层。
例如， 该方法还可以包括： 形成滤光层的图形， 其中所述彩色滤光片的 蓝色子像素区域未设置滤光层； 形成黑矩阵， 所述黑矩阵分隔出的不同彩色 子像素区域； 在所述彩色滤光片的红色子像素区域通过红色量子点材料形成 红色子像素， 在所述彩色滤光片的绿色子像素区域通过绿色量子点材料形成 绿色子像素， 在所述彩色滤光片的蓝色子像素区域通过透明材料形成蓝色子 像素。
例如， 该方法还可以包括： 形成滤光层的图形， 其中， 所述彩色子像素 区域均设置有滤光层； 形成黑矩阵， 所述黑矩阵分隔出的不同彩色子像素区 域； 在所述彩色滤光片的红色子像素区域通过红色量子点材料形成红色子像 素， 在所述彩色滤光片的绿色子像素区域通过绿色量子点材料形成绿色子像 素， 在所述彩色滤光片的蓝色子像素区域通过蓝色量子点材料形成蓝色子像 素。
例如， 所述蓝色子像素区域的透明材料可以与所述保护层同时形成。 例如， 所述像素还可以包括黄色子像素， 所述黄色子像素通过黄色量子 点材料形成。 附图说明
为了更清楚地说明本发明实施例的技术方案， 下面将对实施例的附图作 筒单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例， 而非对本发明的限制。 图 1为本发明实施例一提供的一种量子点彩色滤光片的结构示意图； 图 2为本发明实施例一提供的另一种量子点彩色滤光片的结构示意图； 图 3为本发明实施例二提供的一种显示装置结构示意图；
图 4为本发明实施例三提供的一种量子点彩色滤光片的结构示意图； 图 5为本发明实施例四提供的一种显示装置的结构示意图
图 6为本发明实施例四提供的另一种显示装置的结构意图
图 7为本发明实施例五提供的量子点彩色滤光片的制作方法流程图。 附图标记：
11 : 衬底基板； 12: 滤光层； 13 : 黑矩阵； 14: 像素层； 14R: 红色子 像素； 14G: 绿色子像素； 14B: 蓝色子像素； 14Y: 黄色子像素； 15: 保护 层； 10: 彩色滤光片； 20: 阵列基板； 30: 液晶层； 40: 背光源； 50: 蓝色 光； 60: RGB光； 70: 发光面板； 80: 紫外光。 具体实施方式
为使本发明实施例的目的、 技术方案和优点更加清楚， 下面将结合本发 明实施例的附图，对本发明实施例的技术方案进行清楚、 完整地描述。显然， 所描述的实施例是本发明的一部分实施例， 而不是全部的实施例。 基于所描 述的本发明的实施例， 本领域普通技术人员在无需创造性劳动的前提下所获 得的所有其他实施例， 都属于本发明保护的范围。
实施例一
如图 1所示，本实施例提供一种彩色滤光片， 包括衬底基板 11和设置在 该衬底基板 11上的像素层 14, 该像素层 14包括多个像素， 每个像素包括若 干不同颜色的彩色子像素。这些不同颜色的彩色子像素例如为红绿蓝（ RGB ) 子像素 14R、 14G、 14B。 该彩色滤光片还包括设置在衬底基板 11上的滤光 层 12。 该衬底基板 11可以为玻璃基板、 石英、 树脂等任何透明的材料。 每 个像素中的至少一个彩色子像素由量子点材料形成， 该量子点材料被入射光 激发后产生的光的颜色与对应的所述彩色子像素的颜色相同。滤光层 12对应 于由量子点材料形成的彩色子像素区域设置， 用于吸收未激发量子点材料透 射过彩色子像素的入射光。 如图 1所示， 该滤光层 12设置在衬底基板 11和 像素层 14的彩色子像素之间。用于激发入射光例如来自于设定光源，例如显 示装置的背光源。
滤光层 12与像素层 14可分别设置在衬底基板 11的不同侧，只要从像素 层 14出射的光再经过该滤光层 14即可。例如，像素层 14可以直接形成在衬 底基板 11上。
本实施例中， 一个像素中的彩色子像素可包括红色子像素 14R、 绿色子 像素 14G和蓝色子像素 14B。 红色子像素 14R由红色量子点材料形成； 绿色 子像素 14G由绿色量子点材料形成;蓝色子像素 14B由蓝色量子点材料形成。
量子点是一些肉眼无法看到的、极其微小的半导体纳米晶体，例如由辞、 镉、硒和硫原子组合而成， 晶体中的颗粒直径例如不足 10纳米。 量子点有一 个与众不同的特性： 当受到电或光刺激时就会发光， 产生亮光和纯色， 发出 的光线颜色由量子点的组成材料和大小所决定。 本实施例中的量子点可为硫 化辞、 氧化辞、 氮化镓、 硒化辞、 疏化镉、 硒化镓、 硒化镉、 碲化辞、 碲化 镉、 砷化镓、 磷化铟、 碲化铅中的至少一种。 当然， 该量子点的材料包括但 并不局限于上述列举出来的几种， 具有与上述物质具有相同或相似的其他材 料也同样可以适用。 以硫化辞（ZnS )量子点为例， 发射红光的量子点尺寸 主要在约 9 ~ 10nm,发射黄光量子点尺寸约 8 nm, 发射绿光的量子点尺寸在 约 7nm。 又例如， 硒化镉 (CdSe)在粒径为 2.1nm时发出蓝色荧光， 在粒径为 5nm时发出绿色荧光， 在粒径接近 10nm时， 所激发的荧光就接近红色。
例如， 为了防止红色子像素和绿色子像素和蓝色子像素透出背光源的光 源颜色， 在例如玻璃基板的衬底基板上设置可以吸收背光源的滤光层。 来自 例如背光源的入射光的光线先经过量子点材料形成的彩色子像素， 来自该背 光源的入射光激发量子点材料发出相应颜色的光， 透过彩色子像素且未激发 量子点材料的光线在经过滤光层时被过滤， 而量子点材料发出的相应颜色的 光线可以透过滤光层。 利用量子点在背光源照射下可呈现出不同颜色荧光的 物理特征形成彩色滤光片， 使得彩色滤光片的透过率得以提高， 极大地提高 和丰富了画面的亮度和色彩， 有效提升了图像的显示品质， 增强用户的体验 感， 同时最大程度地降低了生产成本。
为了能够较好地吸收背光源的光线， 同时最大程度地降低显示面板的厚 度， 滤光层 12的厚度可设置为 0.2~0.7μηι。 滤光层 12材料例如为紫外光吸 收剂。 紫外光吸收剂需要根据背光源发射光线的波长范围选择， 紫外光吸收 剂形成的滤光层可以有效吸收经过彩色子像素区域但未激发量子点材料的紫 外光， 同时可透过量子点材料发射的可见光（RGB可见光） 。
紫外光吸收剂可以为水杨酸酯类、苯酮类、苯并三唑类、取代丙烯腈类、 三嗪类和受阻胺类。 例如， 邻羟基苯曱酸苯酯、 2- ( 2，-羟基 -5，-曱基苯基）苯 并三氮唑、 2,4-二羟基二苯曱酮、 2-羟基 -4-曱氧基二苯曱酮等。
本实施例中的量子点彩色滤光片通过设置由紫外光吸收剂制成的滤光 层， 可有效吸收掉背光源光线中未激发量子点材料发光而透射过彩色子像素 的光线， 但使得与彩色子像素对应的光线得以通过， 这增强了彩色子像素的 色彩饱和度， 进而提高显示品质。
另外， 该彩色滤光片还可包括黑矩阵 13和保护层 15。 黑矩阵 13用于分 隔不同颜色的彩色子像素 14R、 14G和 14B, 防止背景光泄漏， 提高显示对 比度， 防止混色和增加颜色的纯度； 保护层 15覆盖像素层 14和黑矩阵 13 , 用于保护彩色子像素和黑矩阵， 保护层 15为透明材料。
另外， 为了更加丰富显示效果的颜色饱和度并且使得色域更广阔， 该每 个像素还可以进一步包括黄色子像素 14Y,该黄色子像素 14Y由黄色量子点 材料形成。 该黄色子像素区域也设置滤光层 12。 该示例请参考图 2。
实施例二
如图 3所示， 本实施例中提供一种显示装置， 包括实施例一中的彩色滤 光片 10、 阵列基板 20和背光源 40。 该彩色滤光片 10和阵列基板 20之间设 有液晶层 30形成液晶面板。 背光源 40为紫外背光源， 发射紫外光 80, 并且 例如为直下式背光源。 彩色滤光片 10中红色子像素 14R由红色量子点材料 形成，绿色子像素 14G由绿色量子点材料形成，蓝色子像素 14B由蓝色量子 点材料形成， 每个彩色子像素区域均设置有滤光层 12, 滤光层 12用来吸收 未激发量子点材料而透过彩色子像素的紫外光 80。 如图 3所示， 彩色滤光片 10的像素层 14比滤光层 12更靠近背光源 40。 滤光层 12可以位于衬底基板 11内侧也可以位于其外侧。
需要说明的是， 本实施例中的紫外背光源 40发射的紫外光 80先经过量 子点材料形成的彩色子像素 14R、 14G和 14B, 紫外光 80激发量子点材料发 出相应颜色的光，而未激发量子点材料而透射过彩色子像素的紫外光 80在经 过滤光层 12时被过滤，但量子点材料发出的相应颜色的光线（即红光、绿光 和蓝光）可以透过滤光层 12。
紫外背光源 40发出的紫外光 80经过彩色滤光片 10的由量子点材料形成 的红色子像素 14R、绿色子像素 14G和蓝色子像素 14B分别转化为红色、绿 色和蓝色的出射光 60, 以用于显示， 而没有激发量子点材料而透过这些彩色 子像素的紫外光 80则被滤光层 12吸收。 由此， 实现量子点彩色滤光片 10 的彩色透光。
该显示装置可以为液晶显示器、 有机发光二极管（OLED ) 、 液晶面板、 液晶电脑或其他显示装置。 该显示装置采用实施例中的彩色滤光片极大地提 高和丰富了画面的亮度和色彩， 有效提升了图像的显示品质， 增强用户的体 验感。
实施例三
如图 4所示，本实施例提供一种彩色滤光片包括衬底基板 11和设置在该 衬底基板 11上的像素层 14, 该像素层 14包括多个像素， 每个像素包括若干 不同颜色的彩色子像素。 这些不同颜色的彩色子像素例如为红、 绿、 蓝子像 素。 该彩色滤光片还包括设置在该衬底基板 11上的滤光层 12。 该衬底基板 11可以为玻璃基板、 石英、 树脂等任何透明的材料。 每个像素中的至少一个 彩色子像素由量子点材料形成， 所述量子点材料被入射光激发后产生的光的 颜色与对应的所述彩色子像素的颜色相同。滤光层 12对应于由量子点材料形 成的彩色子像素区域设置， 用于吸收未激发量子点材料而透过彩色子像素的 光线。 如图 4所示， 该滤光层 12设置在衬底基板 11和彩色子像素之间。 用 于激发入射光例如来自于设定光源， 例如显示装置的背光源。
滤光层 12与像素层 14可分别设置在衬底基板 11的不同侧，只要从像素 层 14出射的光再经过该滤光层 14即可。例如，像素层 14可以直接形成在衬 底基板 11上。
本实施例中的像素包括红色子像素 14R、绿色子像素 14G和蓝色子像素
14B, 该红色子像素 14R由红色量子点材料形成， 所述绿色子像素 14G由绿 色量子点材料形成； 所述蓝色子像素 14B由透明材料形成。
本实施例中， 量子点可为硫化辞、 氧化辞、 氮化镓、 硒化辞、 硫化镉、 硒化镓、 硒化镉、 碲化辞、 碲化镉、 砷化镓、 磷化铟、 碲化铅中的至少一种， 当然， 该量子点的材料包括但并不局限于上述列举出来的物质， 其他具有与 上述物质具有相同或相似的材料也同样可以适用。 例如以硫化辞（ZnS )量 子点为例， 发射红光的量子点尺寸主要在约 9 ~ 10nm, 发射黄光量子点尺寸 约 8 nm, 发射绿光的量子点尺寸在约 7nm。
例如， 为了防止红色子像素和绿色子像素透出背光源发出的光的颜色， 在例如玻璃基板的衬底基板上设置可以吸收背光源的滤光层 12。背光源发出 的光线的波长小于所彩色滤光片中的量子点材料被激发后产生的光线的波长 即可。 例如， 滤光层的厚度为 0.2~0.7μηι。 滤光层 12的材料例如为黄色感光 性树脂组合物， 其可以包括碱可溶性树脂、 可聚合单体、 引发剂、 黄色颜料 和溶剂等， 例如由碱可溶性树脂、 可聚合单体、 引发剂、 黄色颜料、 分散剂、 添加剂和溶剂组成。
例如， 碱可溶性树脂可以为曱基丙烯酸类碱可溶性树脂， 例如， 由曱基 丙烯酸曱酯、 曱基丙烯酸正丁酯、 曱基丙烯酸、 丙烯酸曱酯、 丙烯酸丁酯、 丙烯酸乙酯、 丙烯酸羟乙酯、 二丙烯酸乙二醇酯、 二丙烯酸二乙醇酯、 二曱 基丙烯酸乙二醇酯等制备的碱可溶性树脂， 分子量可以为约 4000~20000。 能团单体， 例如双季戊四醇六丙烯酸酯、 二缩丙二醇双丙烯酸酯、 三缩丙二 醇双丙烯酸酯、三羟曱基丙烷三丙烯酸酯、二缩三羟曱基丙烷四丙烯酸酯等。
例如， 光引发剂可以为自由基型光引发剂或阳离子型光引发剂， 或自由 基型光引发剂与阳离子型光引发剂的组合， 例如， 1-羟基-环己基苯酮、 2-羟 基 -2-曱基 -1-苯基 -1-丙酮、 2-曱基 -1- ( 4-曱巯基苯基） -2-吗啉 -1-丙酮、 2,4,6- 三曱基苯曱酰磷酸二乙酯、 2,4,6-三曱基苯曱酰二苯基氧化膦等。
例如， 黄色颜料可以为偶氮型、 偶氮缩合型以及杂环类， 例如， P.Y.1 , P.Y.12, Ρ.Υ.3, P.Y.13 , Ρ.Υ.83, Ρ.Υ.93, Ρ.Υ.94, Ρ.Υ.95, P.Y.109, P.Y.126, P.Y.127, P.Y.138, P.Y.139, P.Y.139, P.Y.147, P.Y.150, P.Y.174, P.Y.180 等。
例如， 溶剂可以为曱乙二醇单曱醚、 乙二醇单乙醚、 乙二醇单丙醚、 乙 二醇单丁醚、 二乙二醇二乙醚乙酸乙酯、 曱乙酮、 曱基异丁基酮、 单曱基醚 乙二醇酯、 丙二醇单曱基醚、 丙二醇单曱基醚醋酸酯、 环己烷、 二曱苯、 异 丙醇中之一或者两种以上组合。
例如， 分散剂可以为 BYK、 solsperse, EFKA、 味之素等公知的颜料润 湿分散剂。
例如， 助剂可以为粘合促进剂、 抗氧剂、 抗絮凝剂、 流平剂、 消泡剂等， 根据需要进行添加。
例如， 该感光性树脂组合物中， 碱可溶性树脂固形份占 10~30%, 可聚 合单体（或光固化树脂） 固形份占 10~30%, 光引发剂固形份占 1~20%, 颜 料占 10~40%。
本实施例中的量子点彩色滤光片通过设置由黄色感光性树脂组合物制成 的滤光层， 可有效吸收掉背光源发出的光中未激发量子点材料发光的光线， 而使得与彩色子像素对应的光线得以通过， 这增强了彩色子像素的色彩饱和 度， 进而提高显示品质。
另外， 该彩色滤光片还包括黑矩阵 13和保护层 15。 黑矩阵 13用于分隔 不同颜色的彩色子像素， 防止背景光泄漏， 提高显示对比度， 防止混色和增 加颜色的纯度； 保护层 15覆盖像素层 14和黑矩阵 13 , 用于保护彩色子像素 和黑矩阵， 保护层为透明材料。
另外， 为了更加丰富显示效果的颜色饱和度并且使得色域更广阔， 每个 像素还可以包括黄色子像素 14Y,该黄色子像素 14Y由黄色量子点材料形成。 该黄色子像素区域中也设置有滤光层 12。
实施例四
如图 5所示， 本实施例提供一种显示装置， 包括实施例三中的彩色滤光 片 10、 阵列基板 20和背光源 40。 背光源 40发出的蓝光 50光线的波长小于 彩色滤光片 10中子像素中的量子点材料被激发后产生的光线的波长。该背光 源 40例如为直下式背光源。
本实施例中的背光源 40为蓝色背光源，例如为蓝色发光二极管，其发射 的蓝光 50的波长范围为 440~455nm;该滤光层 12吸收 440~455nm范围内光 线。 需要说明的是， 本实施例中的蓝色背光源 40发出的蓝光 50先经过彩色 子像素， 再经过滤光层 12, 该滤光层 12过滤掉透过彩色子像素但未激发量 子点材料的背景光。
每个像素可以包括红色子像素 14R、绿色子像素 14G和蓝色子像素 14B。 红色子像素 14R由红色量子点材料形成，绿色子像素 14G由绿色量子点材料 形成，蓝色子像素 14B由透明材料形成。蓝色子像素区域 14B未设置滤光层 12, 其他彩色子像素区域均设置有滤光层， 滤光层 12吸收蓝光 50。 蓝光 50 经过量子点材料形成的红色子像素 14R和绿色子像素 14G, 激发量子点材料 分别发出红光和绿光， 红光和绿光可以透过滤光层 12, 经过红色子像素 14R 和绿色子像素 14B但未激发量子点材料的蓝光 50则被滤光层 12过滤； 蓝光 50本身经过透明材料形成的蓝色子像素 14B而出射， 仍为蓝光。
该滤光层 12的材料例如为黄色感光性树脂组合物， 其由碱可溶性树脂、 可聚合单体、 引发剂、 黄色颜料、 分散剂、 添加剂和溶剂组成。
本实施例中的滤光层 12吸收 440~455nm范围内光线，可透过 490-760nm 区域的色光， 由于红光的中心波长为 630nm,所以红蓝光经过黄色滤光层后， 红光部分可透过而蓝光部分则被滤光层 12 吸收； 而绿色光的中心波长为 550nm, 因此绿蓝光经过黄色滤光层后， 绿光部分仍然可以透过， 而蓝光部 分被黄色滤光层吸收。
蓝色背光源 40发出的光透过彩色滤光片 10之后， 对应红色子像素、 绿 色子像素和蓝色子像素分别发出红色、 绿色和蓝色的出射光 60, 这由此实现 了量子点彩色滤光片的彩色透光。
由于背光源 40为蓝色背光源， 该蓝色子像素由透明材料制成即可。 参考图 6 , 本实施例中的彩色滤光片也可以应用于有机发光二极管 ( OLED ) 中， 该发光面板 (如发蓝光的 OLED面板 ) 70代替背光源 40。
实施例五
如图 7所示， 本发明实施例提供一种制作实施例一中彩色滤光片结构的 工艺方法， 彩色滤光片包括多个像素， 每个像素由若干不同颜色的彩色子像 素组成， 所述方法包括如下的步骤。
步骤 S10、 形成滤光层的图形。
例如，在衬底基板上形成滤光层薄膜，通过构图工艺形成滤光层的图形。 在一个示例中， 在衬底基板上通过涂覆、 溅射、 沉积或其他方式形成滤 光层薄膜， 利用掩膜版对上述基板曝光， 经显影等工艺， 形成滤光层的图形。 薄膜的厚度可以为 0.2~0.7μηι。
步骤 S20、 形成黑矩阵， 所述黑矩阵分隔出的不同彩色子像素区域。 例如， 旋涂或刮涂黑色光刻胶， 经过曝光显影后烘形成限定像素区域的 黑矩阵图形。 步骤 S30、 在完成上述步骤的衬底基板上形成彩色子像素的图形。
例如， 在彩色滤光片的红色子像素区域通过红色量子点材料形成红色子 像素，在彩色滤光片的绿色子像素区域通过绿色量子点材料形成绿色子像素， 在彩色滤光片的蓝色子像素区域通过蓝色量子点材料形成蓝色子像素。
例如， 通过转印或打印的方法将呈现红色的量子点材料和绿色的量子点 材料和蓝色的量子点材料转印到黑矩阵限定的相关区域内。
步骤 S40、 通过旋涂的工艺将保护层涂覆于步骤 S3完成后的膜层上。 本发明实施例对于工艺步骤顺序不做限定， 例如可以先形成黑矩阵， 所 述黑矩阵分隔出的不同彩色子像素区域； 再形成滤光层的图形， 滤光层对应 于由量子点材料形成的彩色子像素设置； 然后再形成彩色子像素的图形和保 护层。
另外， 当滤光层与像素层分别设置在衬底基板的不同侧时， 可以先形成 黑矩阵， 依次形成彩色子像素的图形和保护层； 最后在衬底基板的另一侧形 成滤光层。 或者先在衬底基板的一侧形成滤光层， 然后在衬底基板的另一侧 依次形成黑矩阵、 彩色子像素的图形和保护层。
需要说明的是， 采用本实施例工艺方法制作出来的彩色滤光片， 在实际 应用中， 需要紫外背光源来进行配合应用。
实施例六
本发明实施例提供一种制作实施例三中彩色滤光片结构的工艺方法， 彩 色滤光片包括多个像素， 每个像素由若干不同颜色的彩色子像素组成， 所述 方法包括如下的步骤。
步骤 S10，、 形成滤光层的图形。
例如，在衬底基板上形成滤光层薄膜，通过构图工艺形成滤光层的图形。 在一个示例中， 在衬底基板上通过涂覆、 溅射、 沉积或其他方式形成滤 光层薄膜， 利用掩膜版对上述基板曝光， 经显影等工艺， 形成滤光层的图形。 薄膜的厚度可以为 0.2~0.7μηι。
步骤 S20，、 形成黑矩阵， 所述黑矩阵分隔出的不同彩色子像素区域。 例如， 旋涂或刮涂黑色光刻胶， 经过曝光显影后烘形成限定像素区域的 黑矩阵图形。
步骤 S30，、 在完成上述步骤的衬底基板上形成彩色子像素的图形。 例如， 在彩色滤光片的红色子像素区域通过红色量子点材料形成红色子 像素，在彩色滤光片的绿色子像素区域通过绿色量子点材料形成绿色子像素， 在彩色滤光片的蓝色子像素区域通过透明材料形成蓝色子像素。
例如， 通过转印或打印的方法将呈现红色的量子点材料和绿色的量子点 材料和蓝色的量子点材料转印到黑矩阵限定的相关区域内。
另外， 通过透明材料形成蓝色子像素时， 透明的保护层可以与透明的蓝 色子像素采用同一步骤完成。
本发明实施例对于工艺步骤顺序也不做限定， 具体内容同实施例五， 在 此就不一一赘述。
需要说明的是， 采用本实施例工艺方法制作出来的彩色滤光片， 在实际 应用中， 需要蓝色背光源来进行配合应用。
以上所述仅是本发明的示范性实施方式， 而非用于限制本发明的保护范 围， 本发明的保护范围由所附的权利要求确定。

Claims

权利要求书
1、 一种量子点彩色滤光片， 包括：
衬底基板；
设置在所述衬底基板上的像素层， 包括多个像素， 其中， 每个像素包括 若干不同颜色的彩色子像素， 并且至少一个所述彩色子像素由量子点材料形 成， 所述量子点材料被入射光激发后产生的光的颜色与对应的所述彩色子像 素的颜色相同；
设置在所述衬底基板上的滤光层， 对应于由量子点材料形成的彩色子像 素设置，用于吸收未激发所述量子点材料而透射过所述彩色子像素的入射光。
2、根据权利要求 1所述的量子点彩色滤光片， 其中， 所述滤光层的厚度
Figure imgf000014_0001
3、根据权利要求 1或 2所述的量子点彩色滤光片， 其中， 所述滤光层材 料为紫外吸收剂或黄色感光性树脂组合物。
4、 根据权利要求 1-3任一所述的量子点彩色滤光片， 其中， 所述像素包 括红色子像素、 绿色子像素和蓝色子像素， 以及
所述红色子像素由红色量子点材料形成， 所述绿色子像素由绿色量子点 材料形成； 所述蓝色子像素由蓝色量子点材料形成或由透明材料形成。
5、根据权利要求 4所述的量子点彩色滤光片， 其中， 所述像素还包括黄 色子像素， 所述黄色子像素由黄色量子点材料形成。
6、 根据权利要求 1-5任一项所述的量子点彩色滤光片， 还包括黑矩阵， 所述黑矩阵用于分隔不同颜色的彩色子像素。
7、根据权利要求 6所述的量子点彩色滤光片，还包括保护层， 所述保护 层覆盖所述像素和所述黑矩阵， 所述保护层为透明材料。
8、 根据权利要求 1-7任一项所述的量子点彩色滤光片， 其中， 所述量子 点材料为疏化辞、 氧化辞、 氮化镓、 硒化辞、 疏化镉、 硒化镓、 硒化镉、 碲 化辞、 碲化镉、 砷化镓、 磷化铟、 碲化铅中的至少一种。
9、一种显示装置， 包括如权利要求 1-8任一项所述的量子点彩色滤光片 和背光源， 所述背光源发出的入射光的波长小于所述彩色滤光片中的量子点 材料被激发后产生的光线的波长。
10、根据权利要求 9所述的显示装置， 其中， 所述背光源为蓝色背光源； 所述量子点彩色滤光片中的所述红色子像素由红色量子点材料形成， 所述绿 色子像素由绿色量子点材料形成， 所述蓝色子像素由透明材料形成， 所述蓝 色子像素区域未设置所述滤光层，其他所述彩色子像素区域均设置有滤光层， 所述滤光层吸收蓝色光。
11、根据权利要求 10所述的显示装置， 其中， 所述背光源为蓝色发光二 极管，发射光线的波长范围为 440~455nm; 所述滤光层吸收 440~455nm范围 内光线。
12、根据权利要求 9所述的显示装置， 其中， 所述背光源为紫外背光源； 所述彩色滤光片中所述红色子像素由红色量子点材料形成， 所述绿色子像素 由绿色量子点材料形成， 所述蓝色子像素由蓝色量子点材料形成， 每个所述 彩色子像素区域均设置有滤光层， 所述滤光层吸收紫外光。
13、一种量子点彩色滤光片的制作方法，所述彩色滤光片包括多个像素， 每个像素由若干不同颜色的彩色子像素组成， 所述方法包括：
形成滤光层的图形；
形成彩色子像素的图形， 其中， 不同颜色的彩色子像素区域通过相对应 颜色的量子点材料形成彩色子像素。
14、 根据权利要求 13所述的制作方法， 还包括：
形成黑矩阵；
和 /或形成保护层。
15、 根据要求要求 14所述的制作方法， 还包括：
形成滤光层的图形， 其中所述彩色滤光片的蓝色子像素区域未设置滤光 层；
形成黑矩阵， 所述黑矩阵分隔出的不同彩色子像素区域；
在所述彩色滤光片的红色子像素区域通过红色量子点材料形成红色子像 素， 在所述彩色滤光片的绿色子像素区域通过绿色量子点材料形成绿色子像 素， 在所述彩色滤光片的蓝色子像素区域通过透明材料形成蓝色子像素。
16、 根据要求要求 14所述的制作方法， 包括：
形成滤光层的图形， 其中， 所述彩色子像素区域均设置有滤光层； 形成黑矩阵， 所述黑矩阵分隔出的不同彩色子像素区域； 在所述彩色滤光片的红色子像素区域通过红色量子点材料形成红色子像 素， 在所述彩色滤光片的绿色子像素区域通过绿色量子点材料形成绿色子像 素， 在所述彩色滤光片的蓝色子像素区域通过蓝色量子点材料形成蓝色子像 素。
17、根据权利要求 15所述制作方法， 其中， 所述蓝色子像素区域的透明 材料与所述保护层同时形成。
18、 根据权利要求 15或 16所述的制作方法， 其中， 所述像素还包括黄 色子像素， 所述黄色子像素通过黄色量子点材料形成。
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