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WO2014182239A1 - Ultra-thin smart card modules with chip bumps disposed in susbtrate via holes and methods of fabricating the same - Google Patents

Ultra-thin smart card modules with chip bumps disposed in susbtrate via holes and methods of fabricating the same Download PDF

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Publication number
WO2014182239A1
WO2014182239A1 PCT/SG2013/000182 SG2013000182W WO2014182239A1 WO 2014182239 A1 WO2014182239 A1 WO 2014182239A1 SG 2013000182 W SG2013000182 W SG 2013000182W WO 2014182239 A1 WO2014182239 A1 WO 2014182239A1
Authority
WO
WIPO (PCT)
Prior art keywords
chip
conductive
substrate
conductive pattern
smart card
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/SG2013/000182
Other languages
French (fr)
Inventor
Eng Seng NG
Sze Yong PANG
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SMARTFLEX TECHNOLOGY Pte Ltd
Original Assignee
SMARTFLEX TECHNOLOGY Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SMARTFLEX TECHNOLOGY Pte Ltd filed Critical SMARTFLEX TECHNOLOGY Pte Ltd
Priority to PCT/SG2013/000182 priority Critical patent/WO2014182239A1/en
Publication of WO2014182239A1 publication Critical patent/WO2014182239A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/921Connecting a surface with connectors of different types
    • H01L2224/9211Parallel connecting processes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Definitions

  • Embodiments of the invention relate to ultra-thin smart card modules and methods of fabricating such ultra-thin smart card modules.
  • Smart cards which contain a chip module mounted or inserted into a card carrier body, are used in a variety of applications, e.g. telecommunications, payment cards, etc. Due to the universal demand for smart cards, there have been numerous chip module arrangements and methods of production which attempt to increase reliability and form factor of the chip module.
  • Figure 1 is a cross-sectional view of a chip module 100 which comprises a substrate 110, a conductor layer 120 of copper, gold and nickel applied to a first side of the substrate, a chip 130 arranged on a second opposed side of the substrate, gold wire bonds 150 connecting the chip 130 to the conductor layer 120, and a mold cap 140 encapsulating the wire-bonded chip 130.
  • the wire bonds 50 are connected from the rear side of a bonding hole on the substrate 110 to the conductive pads of the chip 130.
  • the conductor layer 120 is to provide a contact surface to a desired application, e.g. phone or reader terminal. As breakage of the wire bonds 150 is the most common cause of package failure, there is a lower limit to the length of the wire bonds 150 in order to prevent breakage.
  • FIG. 2 is a cross-sectional view of a chip module 200 which comprises a PET substrate 210, conductor layers 220 of gold, nickel and copper applied to both sides of the substrate 210, a chip 230 arranged on one side of the substrate 210, and conductive bumps 250 of the chip 230 seated on one of the two conductor layers 220.
  • the conductor layer 220 which is remote from the bumps 250 is to provide a contact surface to a desired application, e.g. phone or reader terminal.
  • Embodiments of the invention relate to ultra-thin smart card modules that can achieve a module thickness of less than 500 microns.
  • a smart card module comprises a substrate having a first conductive pattern on a first face, a second face that is opposite the first face, and a plurality of via holes; at least a chip having a first plurality of conductive bumps formed on a first major surface of the chip, the chip being arranged so that the first plurality of conductive bumps are disposed in the plurality of via holes and electrically connected to the first conductive pattern; an encapsulant disposed to encapsulate the chip; and an underfill material disposed at least in a space between the chip and the second face of the substrate.
  • a method of fabricating a smart card module comprises: providing at least a chip which is attached with a first plurality of conductive bumps; providing a substrate being perforated with via holes and having a first conductive pattern applied on a first face of the substrate; providing an underfill material on the substrate; arranging the chip on the substrate so that the first plurality of conductive bumps are disposed in the via holes; curing the underfill material; and encapsulating the chip.
  • FIGS 1 and 2 illustrate existing chip modules
  • Figure 3 shows a schematic cross-sectional illustration of a smart card module according to one embodiment of the invention
  • Figure 4 shows a schematic cross-sectional illustration of a smart card module according to another embodiment of the invention.
  • Figure 5A shows a schematic cross-sectional illustration of a smart card module according to another embodiment of the invention.
  • Figure 5B shows a schematic cross-sectional illustration of a dual interface smart card module according to another embodiment of the invention.
  • Figure 5C shows a schematic cross-sectional illustration of a multi-chip smart card module according to another embodiment of the invention.
  • Figure 6 shows a schematic cross-sectional illustration of a smart card module according to another embodiment of the invention
  • Figure 7 illustrates a method of fabricating a smart card module of Figure 3
  • Figure 8 illustrates a method of fabricating a smart card module of Figure 4.
  • the present invention provides ultra-thin smart card modules which are configured for contact, contactless, dual interface and/or multi-chips smart card applications.
  • the module package structures and methods for producing the same will be described in the following paragraphs.
  • Figure 3 shows a schematic cross-sectional illustration of a smart card module
  • the smart card module 300 comprises a substrate 310 having a first conductive pattern 320 on a first face, a second face that is opposite the first face, and a plurality of via holes.
  • the substrate 310 having a first conductive pattern 320 on a first face, a second face that is opposite the first face, and a plurality of via holes.
  • the substrate 3 0 may be provided as a flexible substrate so that bending loads on the smart card containing the module are absorbed in particular by non-encapsulated edge regions of the module.
  • the substrate 310 may include glass epoxy, polyimide, polyethylene naphthalate (PEN), polyethylene terephthalate (PET) or other suitable materials.
  • the first conductive pattern 320 is to provide a contact surface which is to be interfaced or electrically connected with a desired application, e.g. handphone.
  • the first conductive pattern 320 includes copper and nickel, and is free of gold.
  • the first conductive pattern 320 includes copper, nickel and gold.
  • the substrate 310 is perforated with via holes which extend from the first face to the second face of the substrate 3 0.
  • the smart card module 300 of Figure 3 further comprises a chip 330 having a first plurality of conductive bumps 350 formed on a first major surface of the chip 330.
  • the chip 330 is being arranged so that the first plurality of conductive bumps 350 are disposed in the plurality of via holes and electrically connected to the first conductive pattern 320.
  • the chip 330 may be provided as a flip chip having the first plurality of conductive bumps 350 formed on an active area of the chip 330.
  • the chip 330 is mounted on the second face of the substrate 310 such that the conductive bumps 350 are seated in the via holes and on the first conductive pattern 320.
  • the smart card module 300 of Figure 3 further comprises an encapsulant 340 disposed to fully encapsulate the chip 330 to protect the chip 330 from environment and mechanical stresses.
  • the encapsulant 340 may be provided as a mold compound, thermal or ultraviolet (UV) cured resin or other suitable materials.
  • An underfill material 360 is disposed at least in a space between the chip 330 and the second face of the substrate 310 to reduce stress due to mismatch of the coefficient of thermal expansion of the chip 330 and the substrate 310.
  • the underfill material 360 may fill the via holes and act as an adhesive to bond the first plurality of conductive bumps 350 to the substrate 310.
  • FIG. 4 shows a schematic cross-sectional illustration of a smart card module 400 according to another embodiment of the invention.
  • the via holes are provided with thin conductive coatings 470 on the walls of the via holes.
  • the conductive coatings 470 extend from a first end of the via holes to a second end which is distal to the first end.
  • Conductive coatings 470 disposed at the first end of the via holes are electrically connected to the first conductive pattern 420.
  • Conductive coatings 470 disposed at the second end of the via holes are electrically connected to the first plurality of conductive bumps 450 of the chip 430, which are seated thereon.
  • the first plurality of conductive bumps 450 of the chip 430 are electrically connected to the first conductive pattern 420 through the conductive coatings 470.
  • an underfill material 460 is disposed in a space between the chip 430 and the second face of the substrate 410.
  • the via holes may be substantially free of the underfill material 460.
  • Figure 5A shows a schematic cross-sectional illustration of a smart card module 500A according to another embodiment of the invention.
  • the substrate 510 includes a first conductive pattern 520, and further includes a second conductive pattern 522 which is provided on the second face of the substrate 510.
  • the chip 530 is provided with a first plurality of conductive bumps 550 which are electrically connected to the first conductive 520 pattern, and a second plurality of conductive bumps 552 which are electrically connected to the second conductive pattern 522.
  • the first plurality of conductive bumps 550 are disposed in the via holes.
  • the first plurality of conductive bumps 550 are seated on the first conductive pattern 520.
  • the second plurality of conductive bumps 552 are seated on the second conductive pattern 522.
  • An encapsulant 540 is disposed to fully encapsulate the chip 530 and the second conductive pattern 522.
  • An underfill material 560 is disposed in a space between the chip 530 and the second face of the substrate 510 and in a space between the chip 530 and the second conductive pattern 522. The via holes may also be filled with the underfill material 560.
  • Figure 5B shows a schematic cross-sectional illustration of a smart card module 500B according to another embodiment of the invention.
  • the encapsulant 540B is disposed to fully encapsulate the chip 530 and partially encapsulate the second conductive pattern 522.
  • the embodiment of Figure 5B may be used in a dual interface smartcard where the first conductive pattern 520 is to be electrically connected to a contact interface whereas the second conductive pattern 522 is an antenna pad to be electrically connected to a radio frequency circuit external of the second conductive pattern 522.
  • the second conductive pattern 522 may be disposed with a radio frequency circuit within for implementing an antenna device.
  • FIG. 5C shows a schematic cross-sectional illustration of a smart card module 500C according to another embodiment of the invention.
  • the smart card module of Figure 5C includes a plurality of chips 530A, 530B which are electrically connected to a first conductive pattern 520 and a plurality of second conductive patterns 522A, 522B.
  • An encapsulant 540 is disposed to fully encapsulate the chips 530A, 530B and the plurality of second conductive patterns 522A, 522B.
  • Figure 6 shows a schematic cross-sectional illustration of a smart card module 600 according to another embodiment of the invention.
  • the via holes are provided with thin conductive coatings 670 on the walls of the via holes.
  • the conductive coatings 670 extend from a first end of the via holes to a second end which is distal to the first end.
  • Conductive coatings 670 disposed at the first end of the via holes are electrically connected to the first conductive pattern 620.
  • Conductive coatings 670 disposed at the second end of the via holes are electrically connected to the first plurality of conductive bumps 650 of the chip 630, which are seated thereon.
  • the first plurality of conductive bumps 650 of the chip 630 are electrically connected to the first conductive pattern 620 through the conductive coatings 670.
  • the second plurality of conductive bumps 652 are seated on the second conductive pattern 622 to be electrically connected thereto.
  • the first and the second conductive patterns may or may not be electrically connected to each other depending on product requirements.
  • the first conductive pattern may be connected to a contact interface for smart card applications while the second conductive pattern may be connected to a contactless interface, e.g. radio frequency circuit (not shown) for smart card applications. Routing connections from the conductive patterns to the contact or contactless interface are known in the art and will not be described here.
  • Figure 7 illustrates a method 700 of fabricating a smart card module such as the module of Figure 3.
  • the method includes providing a semiconductor chip or die which is attached with a first plurality of conductive bumps (block 702).
  • the method also includes providing a substrate that is perforated with via holes and having a first conductive pattern applied on a first face of the substrate (block 704).
  • Via holes may be formed in the substrate by suitable methods, e.g. punching or laser drilling.
  • the via holes are suitably positioned to complement the arrangement of the first plurality of conductive bumps of the chip.
  • the first conductive pattern may be applied to the substrate by a photo-etching process on a copper layer which is laminated onto the substrate. After the photo-etching process, the substrate undergoes a plating process to plate nickel onto the etched copper layer to provide the first conductive pattern.
  • An underfill material or adhesive is dispensed onto the substrate (block 706).
  • the underfill material may be a conductive or non-conductive paste.
  • the chip is arranged on the substrate so that the first plurality of conductive bumps are disposed in via holes (block 708). More particularly, the first plurality of conductive bumps are seated on the first conductive pattern.
  • the assembly obtained at this stage is then subject to thermal compression (block 710).
  • the thermal compression process cures the underfill material to bond the first plurality of conductive bumps to the substrate and to collapse the first plurality conductive bumps within the via holes.
  • the chip is encapsulated (block 712). This can be done by providing an encapsulant over the chip and thereafter curing the encapsulant.
  • Figure 8 illustrates a method of fabricating a smart card module such as the module of Figure 4.
  • the method includes providing a semiconductor chip or die which is attached with conductive bumps (block 802).
  • the method also includes providing a substrate that is perforated with via holes, the substrate having a first conductive pattern applied on a first face of the substrate, and having conductive coatings provided on walls of the via holes (block 804).
  • Via holes may be formed in the substrate by suitable methods, e.g. punching or laser drilling.
  • the via holes are suitably positioned to complement the arrangement of conductive bumps of the chip.
  • the first conductive pattern may be applied to the substrate by a photo-etching process on a copper layer which is laminated onto the substrate. After the photo- etching process, the substrate undergoes a plating process to plate nickel onto the etched copper layer to provide the first conductive pattern.
  • the underfill material may be a conductive or non-conductive paste.
  • the chip is arranged on the substrate so that the first plurality of conductive bumps are disposed in the via holes (block 808). More particularly, the conductive bumps are seated on the conductive coatings of the via holes.
  • the assembly obtained at this stage is then subject to thermal compression (block 810).
  • the thermal compression process cures the underfill material to bond the conductive bumps to the substrate and to slightly collapse the conductive bumps onto the conductive coatings.
  • the chip is encapsulated (block 812). This can be done by providing an encapsulant over the chip and thereafter curing the encapsulant.
  • the semiconductor chip is provided with a first plurality of conductive bumps having a first height and a second plurality of conductive bumps having a second height which is different from the first height.
  • the substrate is further provided with a second conductive pattern on a second face of the substrate, which is opposite to the first face of the substrate.
  • the chip is arranged on the substrate so that the first plurality of conductive bumps are disposed in the via holes and the second plurality of conductive bumps are disposed or seated on the second conductive pattern.
  • the chip and the second conductive pattern are encapsulated.
  • Embodiments of the invention are advantageous in achieving an ultra-thin chip module thickness of 200 microns to less than 500 microns.

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Abstract

Disclosed are ultra-thin smart card modules (300, 400, 500A, 500B, 500C, 600) that can achieve a package thickness of less than 500 micrometres. Such a smart card module (300, 400, 500A, 500B, 500C, 600) comprises a substrate (310, 410, 510, 610) having a first conductive pattern (320, 420, 520, 620) on a first face, a second face that is opposite the first face, and a plurality of via holes; at least a chip (330, 430, 530, 530A, 530B, 630) having a first plurality of conductive bumps (350, 450, 550, 650) formed on a first major surface of the chip (330, 430, 530, 530A, 530B, 630), the chip (330, 430, 530, 530A, 530B, 630) being arranged so that the first plurality of conductive bumps (350, 450, 550, 650) are disposed in the plurality of via holes and electrically connected to the first conductive pattern (320, 420, 520, 620); an encapsulant (340, 440, 540, 540B, 640) disposed to encapsulate the chip (330, 430, 530, 530A, 530B, 630); and an underfill material (360, 460, 560, 660) disposed at least in a space between the chip (330, 430, 530, 530A, 530B, 630) and the second face of the substrate (310, 410, 510, 610). The first plurality of conductive bumps (350, 450, 550, 650) may be bonded with the plurality of via holes through the underfill material (360, 560) or alternatively may be seated on a plurality of conductive coatings (470, 670) provided in the plurality of via holes and electrically connected to the first conductive pattern (420, 620). The substrate (510, 610) may include a second conductive pattern (522, 522A, 522B, 622) on the second face, in which case the chip (530, 530A, 530B, 630) further includes a second plurality of conductive bumps (552, 652) formed on the first major surface and disposed on the second conductive pattern (522, 522A, 522B, 622) and electrically connected thereto. During the method of manufacturing the smart card module (300, 400, 500A, 500B, 500C, 600), the underfill material (360, 460, 560, 660) is provided on the substrate (310, 410, 510, 610) before chip (330, 430, 530, 530A, 530B, 630) placement and cured after arranging the chip (330, 430, 530, 530A, 530B, 630) so that the first plurality of conductive bumps (350, 450, 550, 650) are disposed in the via holes.

Description

ULTRA-THIN SMART CARD MODULES WITH CHIP BUMPS DISPOSED IN SUSBTRATE VIA HOLES AND METHODS OF FABRICATING THE SAME
Background
Field of Invention
Embodiments of the invention relate to ultra-thin smart card modules and methods of fabricating such ultra-thin smart card modules.
Description of Related Art
Smart cards, which contain a chip module mounted or inserted into a card carrier body, are used in a variety of applications, e.g. telecommunications, payment cards, etc. Due to the universal demand for smart cards, there have been numerous chip module arrangements and methods of production which attempt to increase reliability and form factor of the chip module.
Figure 1 is a cross-sectional view of a chip module 100 which comprises a substrate 110, a conductor layer 120 of copper, gold and nickel applied to a first side of the substrate, a chip 130 arranged on a second opposed side of the substrate, gold wire bonds 150 connecting the chip 130 to the conductor layer 120, and a mold cap 140 encapsulating the wire-bonded chip 130. The wire bonds 50 are connected from the rear side of a bonding hole on the substrate 110 to the conductive pads of the chip 130. The conductor layer 120 is to provide a contact surface to a desired application, e.g. phone or reader terminal. As breakage of the wire bonds 150 is the most common cause of package failure, there is a lower limit to the length of the wire bonds 150 in order to prevent breakage. It thus follows that there is a lower limit to the thickness of such packages. Figure 2 is a cross-sectional view of a chip module 200 which comprises a PET substrate 210, conductor layers 220 of gold, nickel and copper applied to both sides of the substrate 210, a chip 230 arranged on one side of the substrate 210, and conductive bumps 250 of the chip 230 seated on one of the two conductor layers 220. The conductor layer 220 which is remote from the bumps 250 is to provide a contact surface to a desired application, e.g. phone or reader terminal.
Additional information relating to chip modules can be found in U.S. Patent Application Number 2008/0205012 A1 (Heinemann et al.) and U.S. Patent Number 7,714,454 B2.
Accordingly, an improved smart card module and method of producing the same that address the above and other problems are highly desirable.
Summary
Embodiments of the invention relate to ultra-thin smart card modules that can achieve a module thickness of less than 500 microns.
According to one aspect of the invention, a smart card module comprises a substrate having a first conductive pattern on a first face, a second face that is opposite the first face, and a plurality of via holes; at least a chip having a first plurality of conductive bumps formed on a first major surface of the chip, the chip being arranged so that the first plurality of conductive bumps are disposed in the plurality of via holes and electrically connected to the first conductive pattern; an encapsulant disposed to encapsulate the chip; and an underfill material disposed at least in a space between the chip and the second face of the substrate. According to another aspect of the invention, a method of fabricating a smart card module, comprises: providing at least a chip which is attached with a first plurality of conductive bumps; providing a substrate being perforated with via holes and having a first conductive pattern applied on a first face of the substrate; providing an underfill material on the substrate; arranging the chip on the substrate so that the first plurality of conductive bumps are disposed in the via holes; curing the underfill material; and encapsulating the chip.
Brief Description of the Drawings
Embodiments of the invention are disclosed hereinafter with reference to the drawings, in which:
Figures 1 and 2 illustrate existing chip modules;
Figure 3 shows a schematic cross-sectional illustration of a smart card module according to one embodiment of the invention;
Figure 4 shows a schematic cross-sectional illustration of a smart card module according to another embodiment of the invention;
Figure 5A shows a schematic cross-sectional illustration of a smart card module according to another embodiment of the invention;
Figure 5B shows a schematic cross-sectional illustration of a dual interface smart card module according to another embodiment of the invention;
Figure 5C shows a schematic cross-sectional illustration of a multi-chip smart card module according to another embodiment of the invention;
Figure 6 shows a schematic cross-sectional illustration of a smart card module according to another embodiment of the invention; Figure 7 illustrates a method of fabricating a smart card module of Figure 3; and
Figure 8 illustrates a method of fabricating a smart card module of Figure 4.
Detailed Description
In the following description, numerous specific details are set forth in order to provide a thorough understanding of various illustrative embodiments of the invention. It will be understood, however, to one skilled in the art, that embodiments of the invention may be practiced without some or all of these specific details. In other instances, well known process operations have not been described in detail in order not to unnecessarily obscure pertinent aspects of embodiments being described.
The present invention provides ultra-thin smart card modules which are configured for contact, contactless, dual interface and/or multi-chips smart card applications. The module package structures and methods for producing the same will be described in the following paragraphs.
Figure 3 shows a schematic cross-sectional illustration of a smart card module
300 according to one embodiment of the invention. The smart card module 300 comprises a substrate 310 having a first conductive pattern 320 on a first face, a second face that is opposite the first face, and a plurality of via holes. The substrate
3 0 may be provided as a flexible substrate so that bending loads on the smart card containing the module are absorbed in particular by non-encapsulated edge regions of the module. The substrate 310 may include glass epoxy, polyimide, polyethylene naphthalate (PEN), polyethylene terephthalate (PET) or other suitable materials. The first conductive pattern 320 is to provide a contact surface which is to be interfaced or electrically connected with a desired application, e.g. handphone. In certain embodiments, the first conductive pattern 320 includes copper and nickel, and is free of gold. In certain other embodiments, the first conductive pattern 320 includes copper, nickel and gold. The substrate 310 is perforated with via holes which extend from the first face to the second face of the substrate 3 0.
The smart card module 300 of Figure 3 further comprises a chip 330 having a first plurality of conductive bumps 350 formed on a first major surface of the chip 330. The chip 330 is being arranged so that the first plurality of conductive bumps 350 are disposed in the plurality of via holes and electrically connected to the first conductive pattern 320. In one embodiment, the chip 330 may be provided as a flip chip having the first plurality of conductive bumps 350 formed on an active area of the chip 330. The chip 330 is mounted on the second face of the substrate 310 such that the conductive bumps 350 are seated in the via holes and on the first conductive pattern 320.
The smart card module 300 of Figure 3 further comprises an encapsulant 340 disposed to fully encapsulate the chip 330 to protect the chip 330 from environment and mechanical stresses. The encapsulant 340 may be provided as a mold compound, thermal or ultraviolet (UV) cured resin or other suitable materials. An underfill material 360 is disposed at least in a space between the chip 330 and the second face of the substrate 310 to reduce stress due to mismatch of the coefficient of thermal expansion of the chip 330 and the substrate 310. In certain embodiments, the underfill material 360 may fill the via holes and act as an adhesive to bond the first plurality of conductive bumps 350 to the substrate 310.
Figure 4 shows a schematic cross-sectional illustration of a smart card module 400 according to another embodiment of the invention. As there are similarities in the smart card modules of Figure 4 and Figure 3, only the differences will be described. In the embodiment of Figure 4, the via holes are provided with thin conductive coatings 470 on the walls of the via holes. The conductive coatings 470 extend from a first end of the via holes to a second end which is distal to the first end. Conductive coatings 470 disposed at the first end of the via holes are electrically connected to the first conductive pattern 420. Conductive coatings 470 disposed at the second end of the via holes are electrically connected to the first plurality of conductive bumps 450 of the chip 430, which are seated thereon. Accordingly, the first plurality of conductive bumps 450 of the chip 430 are electrically connected to the first conductive pattern 420 through the conductive coatings 470. In this embodiment, an underfill material 460 is disposed in a space between the chip 430 and the second face of the substrate 410. The via holes may be substantially free of the underfill material 460.
Figure 5A shows a schematic cross-sectional illustration of a smart card module 500A according to another embodiment of the invention. As there are similarities in the smart card modules of Figure 5A and Figure 3, only the differences will be described. In Figure 5A, the substrate 510 includes a first conductive pattern 520, and further includes a second conductive pattern 522 which is provided on the second face of the substrate 510. The chip 530 is provided with a first plurality of conductive bumps 550 which are electrically connected to the first conductive 520 pattern, and a second plurality of conductive bumps 552 which are electrically connected to the second conductive pattern 522. The first plurality of conductive bumps 550 are disposed in the via holes. Particularly, the first plurality of conductive bumps 550 are seated on the first conductive pattern 520. The second plurality of conductive bumps 552 are seated on the second conductive pattern 522. An encapsulant 540 is disposed to fully encapsulate the chip 530 and the second conductive pattern 522. An underfill material 560 is disposed in a space between the chip 530 and the second face of the substrate 510 and in a space between the chip 530 and the second conductive pattern 522. The via holes may also be filled with the underfill material 560.
Figure 5B shows a schematic cross-sectional illustration of a smart card module 500B according to another embodiment of the invention. As there are similarities in the smart card modules of Figure 5B and Figure 5A, only the differences will be described. In the embodiment of Figure 5B, the encapsulant 540B is disposed to fully encapsulate the chip 530 and partially encapsulate the second conductive pattern 522. The embodiment of Figure 5B may be used in a dual interface smartcard where the first conductive pattern 520 is to be electrically connected to a contact interface whereas the second conductive pattern 522 is an antenna pad to be electrically connected to a radio frequency circuit external of the second conductive pattern 522. In an alternative embodiment, the second conductive pattern 522 may be disposed with a radio frequency circuit within for implementing an antenna device.
Figure 5C shows a schematic cross-sectional illustration of a smart card module 500C according to another embodiment of the invention. As there are similarities in the smart card modules of Figure 5C and Figure 5A, only the differences will be described. The smart card module of Figure 5C includes a plurality of chips 530A, 530B which are electrically connected to a first conductive pattern 520 and a plurality of second conductive patterns 522A, 522B. An encapsulant 540 is disposed to fully encapsulate the chips 530A, 530B and the plurality of second conductive patterns 522A, 522B. Figure 6 shows a schematic cross-sectional illustration of a smart card module 600 according to another embodiment of the invention. As there are similarities in the smart card modules of Figure 6 and Figure 5, only the differences will be described. In the embodiment of Figure 6, the via holes are provided with thin conductive coatings 670 on the walls of the via holes. The conductive coatings 670 extend from a first end of the via holes to a second end which is distal to the first end. Conductive coatings 670 disposed at the first end of the via holes are electrically connected to the first conductive pattern 620. Conductive coatings 670 disposed at the second end of the via holes are electrically connected to the first plurality of conductive bumps 650 of the chip 630, which are seated thereon. Accordingly, the first plurality of conductive bumps 650 of the chip 630 are electrically connected to the first conductive pattern 620 through the conductive coatings 670. The second plurality of conductive bumps 652 are seated on the second conductive pattern 622 to be electrically connected thereto.
In the embodiment of Figures 5A to 5C and 6, the first and the second conductive patterns may or may not be electrically connected to each other depending on product requirements. Particularly, the first conductive pattern may be connected to a contact interface for smart card applications while the second conductive pattern may be connected to a contactless interface, e.g. radio frequency circuit (not shown) for smart card applications. Routing connections from the conductive patterns to the contact or contactless interface are known in the art and will not be described here.
Figure 7 illustrates a method 700 of fabricating a smart card module such as the module of Figure 3. The method includes providing a semiconductor chip or die which is attached with a first plurality of conductive bumps (block 702). The method also includes providing a substrate that is perforated with via holes and having a first conductive pattern applied on a first face of the substrate (block 704). Via holes may be formed in the substrate by suitable methods, e.g. punching or laser drilling. The via holes are suitably positioned to complement the arrangement of the first plurality of conductive bumps of the chip. The first conductive pattern may be applied to the substrate by a photo-etching process on a copper layer which is laminated onto the substrate. After the photo-etching process, the substrate undergoes a plating process to plate nickel onto the etched copper layer to provide the first conductive pattern.
An underfill material or adhesive is dispensed onto the substrate (block 706). The underfill material may be a conductive or non-conductive paste. Thereafter, the chip is arranged on the substrate so that the first plurality of conductive bumps are disposed in via holes (block 708). More particularly, the first plurality of conductive bumps are seated on the first conductive pattern. The assembly obtained at this stage is then subject to thermal compression (block 710). The thermal compression process cures the underfill material to bond the first plurality of conductive bumps to the substrate and to collapse the first plurality conductive bumps within the via holes. Thereafter, the chip is encapsulated (block 712). This can be done by providing an encapsulant over the chip and thereafter curing the encapsulant.
Figure 8 illustrates a method of fabricating a smart card module such as the module of Figure 4. The method includes providing a semiconductor chip or die which is attached with conductive bumps (block 802). The method also includes providing a substrate that is perforated with via holes, the substrate having a first conductive pattern applied on a first face of the substrate, and having conductive coatings provided on walls of the via holes (block 804). Via holes may be formed in the substrate by suitable methods, e.g. punching or laser drilling. The via holes are suitably positioned to complement the arrangement of conductive bumps of the chip. The first conductive pattern may be applied to the substrate by a photo-etching process on a copper layer which is laminated onto the substrate. After the photo- etching process, the substrate undergoes a plating process to plate nickel onto the etched copper layer to provide the first conductive pattern.
An underfill material or adhesive is dispensed onto the substrate (block 806). The underfill material may be a conductive or non-conductive paste. The chip is arranged on the substrate so that the first plurality of conductive bumps are disposed in the via holes (block 808). More particularly, the conductive bumps are seated on the conductive coatings of the via holes. The assembly obtained at this stage is then subject to thermal compression (block 810). The thermal compression process cures the underfill material to bond the conductive bumps to the substrate and to slightly collapse the conductive bumps onto the conductive coatings. Thereafter, the chip is encapsulated (block 812). This can be done by providing an encapsulant over the chip and thereafter curing the encapsulant.
The above-described methods of Figures 7 and 8 may be applied to fabricating a smart card module of any of Figures 5A to 5C with the following modifications. In blocks 702 and 802, the semiconductor chip is provided with a first plurality of conductive bumps having a first height and a second plurality of conductive bumps having a second height which is different from the first height. In blocks 704 and 804, the substrate is further provided with a second conductive pattern on a second face of the substrate, which is opposite to the first face of the substrate. In blocks 708 and 708, the chip is arranged on the substrate so that the first plurality of conductive bumps are disposed in the via holes and the second plurality of conductive bumps are disposed or seated on the second conductive pattern. In blocks 712 and 812, the chip and the second conductive pattern are encapsulated.
Embodiments of the invention are advantageous in achieving an ultra-thin chip module thickness of 200 microns to less than 500 microns.
Other embodiments will be apparent to those skilled in the art from consideration of the specification and practice of the invention. Furthermore, certain terminology has been used for the purposes of descriptive clarity, and not
to limit the disclosed embodiments of the invention. The embodiments and features described above should be considered exemplary, with the invention being defined by the appended claims.

Claims

What is claimed is:
1. A smart card module comprising:
a substrate having a first conductive pattern on a first face, a second face that is opposite the first face, and a plurality of via holes;
at least a chip having a first plurality of conductive bumps formed on a first major surface of the chip, the chip being arranged so that the first plurality of conductive bumps are disposed in the plurality of via holes and electrically connected to the first conductive pattern;
an encapsulant disposed to encapsulate the chip; and
an underfill material disposed at least in a space between the chip and the second face of the substrate.
2. The smart card module of claim 1 , wherein the underfill material is disposed in the plurality of via holes and bonded with the first plurality of conductive bumps.
3. The smart card module of claim 1 , wherein the first conductive pattern is free of gold.
4. The smart card module of claim 1 , wherein a thickness of the chip module is between 200 microns to less than 500 microns.
5. The smart card module of any of the claim 1 , wherein the first plurality of conductive bumps are seated on the first conductive pattern.
6. The smart card module of any of claim 1 , wherein the first plurality of conductive bumps are seated on a plurality of conductive coatings provided in the plurality of via holes, wherein the plurality of conductive coatings are electrically connected to the first conductive pattern.
7. The smart card module of any of claims 1 to 6, wherein the substrate further includes a second conductive pattern on the second face of the substrate, wherein the chip further includes a second plurality of conductive bumps formed on the first major surface of the chip, the chip being arranged so that the second plurality of conductive bumps are disposed on the second conductive pattern and electrically connected thereto.
8. The smart card module of claim 7, wherein the encapsulant is further disposed to partially encapsulate the second conductive pattern.
9. The smart card module of claim 8, wherein the first and the second conductive patterns are electrically unconnected from each other, and wherein the second conductive pattern is electrically connected to a radio frequency circuit which is disposed within or external of the second conductive pattern.
10. A method of fabricating a smart card module, the method comprising:
providing at least a chip which is attached with a first plurality of conductive bumps;
providing a substrate being perforated with via holes and having a first conductive pattern applied on a first face of the substrate;
providing an underfill material on the substrate;
arranging the chip on the substrate so that the first plurality of conductive bumps are disposed in the via holes;
curing the underfill material; and
encapsulating the chip.
11. The method of claim 10, wherein arranging the chip on the substrate includes seating the first plurality of conductive bumps on the first conductive pattern.
12. The method of claim 10, wherein providing a substrate being perforated with via holes and having a first conductive pattern applied on a first face of the substrate includes providing the substrate with a plurality of conductive coatings in the plurality of via holes, wherein the plurality of conductive coatings are electrically connected to the first conductive pattern.
13. The method of claim 10 or 11 , wherein providing a chip which is attached with a first plurality of conductive bumps includes providing the chip which is further attached with a second plurality of conductive bumps,
wherein providing a substrate being perforated with via holes and having a first conductive pattern applied on a first face of the substrate includes providing the substrate further having a second conductive pattern applied on a second face of the substrate,
wherein arranging the chip on the substrate so that the first plurality of conductive bumps are disposed in the via holes further includes arranging the chip on the substrate so that the second plurality of conductive bumps are disposed on the second conductive pattern.
14. The method of claim 13, wherein encapsulating the chip includes partially encapsulating the second conductive pattern.
15. The method of claim 14, further comprising: electrically connecting the first conductive pattern to a contact interface for smart card application; and electrically connecting the second conductive pattern to a radio frequency circuit which is disposed within or external of the second conductive pattern.
PCT/SG2013/000182 2013-05-07 2013-05-07 Ultra-thin smart card modules with chip bumps disposed in susbtrate via holes and methods of fabricating the same Ceased WO2014182239A1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110909852A (en) * 2019-12-11 2020-03-24 朱小锋 Manufacturing device for safely packaging metal smart card

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002076055A (en) * 2000-08-22 2002-03-15 Hitachi Ltd Semiconductor device mounting method and mounting structure
JP2005347513A (en) * 2004-06-03 2005-12-15 Matsushita Electric Ind Co Ltd Semiconductor device and manufacturing method thereof
US20060220230A1 (en) * 2005-03-31 2006-10-05 Renesas Technology Corp. Semiconductor device and method of manufacturing thereof
JP2008147317A (en) * 2006-12-08 2008-06-26 Matsushita Electric Ind Co Ltd Electronic component mounting method
US20080205012A1 (en) 2006-12-21 2008-08-28 Infineon Technologies Ag Chip card module and method of producing a chip card module
US20080308314A1 (en) * 2007-06-18 2008-12-18 Elpida Memory, Inc. Implementation structure of semiconductor package
US7714454B2 (en) 2006-12-20 2010-05-11 Infineon Technologies Ag Chip module and method for producing a chip module

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002076055A (en) * 2000-08-22 2002-03-15 Hitachi Ltd Semiconductor device mounting method and mounting structure
JP2005347513A (en) * 2004-06-03 2005-12-15 Matsushita Electric Ind Co Ltd Semiconductor device and manufacturing method thereof
US20060220230A1 (en) * 2005-03-31 2006-10-05 Renesas Technology Corp. Semiconductor device and method of manufacturing thereof
JP2008147317A (en) * 2006-12-08 2008-06-26 Matsushita Electric Ind Co Ltd Electronic component mounting method
US7714454B2 (en) 2006-12-20 2010-05-11 Infineon Technologies Ag Chip module and method for producing a chip module
US20080205012A1 (en) 2006-12-21 2008-08-28 Infineon Technologies Ag Chip card module and method of producing a chip card module
US20080308314A1 (en) * 2007-06-18 2008-12-18 Elpida Memory, Inc. Implementation structure of semiconductor package

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"Contactless smart card", WIKIPEDIA, 14 April 2013 (2013-04-14), XP055106840, Retrieved from the Internet <URL:http://en.wikipedia.org/w/index.php?title=Contactless_smart_card&oldid=550360790> [retrieved on 20140311] *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110909852A (en) * 2019-12-11 2020-03-24 朱小锋 Manufacturing device for safely packaging metal smart card
CN110909852B (en) * 2019-12-11 2024-03-08 朱小锋 Manufacturing device for safe packaging metal smart card

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