WO2014167682A1 - Etching method and etching apparatus - Google Patents

Abstract

The present invention is provided with a first etching step and a second etching step. In the first etching step, an etchant is ejected from a first fluid nozzle (20) and sprayed onto the etching surface of an etching object (1), whereby the etching surface is etched. In the second etching step, the etchant and a gas are mixed and ejected from a second fluid nozzle (30), and the etchant is sprayed onto the etching surface etched in the first etching step, whereby the etching surface if further etched. In the second etching step, the etchant in the form of liquid droplets smaller than those in the first etching step is sprayed onto the etching surface with a greater impact force than in the first etching step.

Description

Etching method and etching apparatus

The present invention relates to an etching method and an etching apparatus, and more particularly to an etching method and an etching apparatus for pattern-forming a processed conductive layer on a substrate and patterning a wiring portion in a process of manufacturing a printed wiring board.

As an etching method for forming a wiring portion with a fine pattern on the surface of a printed wiring board (substrate) on which components such as semiconductors are mounted, a method of injecting an etching solution onto a substrate from a single fluid nozzle is widely used. A resist film, which is a mask layer, is patterned in advance on the copper foil, and the copper foil is patterned by bringing the etching solution into contact with the copper foil that is not protected by the resist film.

However, in the method using a single fluid nozzle, the particle size of the etching droplet is large. For example, in the processing of a miniaturized wiring pattern in which the interval between adjacent wiring portions is 50 μm or less, the etching droplet is not etched. The upper resist film pattern cannot be etched, and it is difficult to improve the E / F (etch factor).

As a method for solving such inconvenience, a method using a two-fluid nozzle that mixes and jets an etching solution and compressed air has been proposed. By using the two-fluid nozzle, it is possible to make the etching liquid into smaller droplets than the one-fluid nozzle, and the jetting speed is also increased. For example, even in the etching of a pattern miniaturized to 50 μm or less, a fine droplet of an etching solution can be pushed into the pattern at a high speed to improve the E / F.

JP 2002-256458 A JP 2010-287881 A

However, in the method using a two-fluid nozzle, a large amount of compressed air is consumed, resulting in an increase in equipment size and cost.

Therefore, an object of the present invention is to provide an etching method and an etching apparatus capable of obtaining a suitable E / F while minimizing the consumption of compressed air.

In order to achieve the above object, an etching method according to a first aspect of the present invention includes a first etching method in which an etching target surface is etched by spraying an etching solution from one fluid nozzle and spraying the etching target surface on the etching target surface. A second etching step of further etching the etching target surface by mixing the etching solution and the gas and spraying from the two-fluid nozzle and spraying the etching solution onto the etching target surface etched in the first etching step. An etching step. In the second etching process, an etching liquid in a fine droplet is sprayed onto the surface to be etched with a stronger striking force than in the first etching process.

The etching apparatus according to the first aspect of the present invention includes a conveying means, a 1-fluid nozzle, and a 2-fluid nozzle. The transport means transports the etching object along a predetermined transport path that sequentially passes through the first etching processing section and the second etching processing section. The one-fluid nozzle is disposed in the first etching processing unit and sprays and sprays an etching liquid onto the etching target surface of the etching target conveyed by the conveying unit. The two-fluid nozzle is disposed in the second etching processing unit, and mixes and jets an etching solution and a gas onto the etching target surface of the etching target that is transported from the first etching processing unit by the transporting means. The two-fluid nozzle sprays an etching liquid in fine droplets onto the surface to be etched with a stronger striking force than the one-fluid nozzle.

In the method and apparatus described above, on the surface side of the layer to be etched, a rough etching process is first performed with an etching solution of relatively large droplets from one fluid nozzle. Next, a fine etching process is performed with an etching solution of minute droplets from a two-fluid nozzle, and even in the processing of a miniaturized wiring pattern, the etching droplets are placed in the pattern of the resist film on the layer to be etched. Can be pushed into. In this way, the two-fluid nozzle is not used for all the etching processes, and the one-fluid nozzle and the two-fluid nozzle are effectively used together, so that a suitable E / F can be achieved while minimizing the consumption of compressed air. Can be obtained. Note that E / F is the ratio of the etching depth (thickness of the layer to be etched) to the etching amount (undercut amount) in the lateral direction of the layer to be etched, and the larger the value, the better.

The etching method according to the second aspect of the present invention is the etching method according to the first aspect, wherein the surface to be etched is an upper surface of the object to be etched, and the first etching step is performed from one fluid nozzle. A first suction step of sucking and removing the etching solution sprayed on the target surface; The second etching step includes a second suction step of sucking and removing the etchant sprayed from the two-fluid nozzle onto the etching target surface.

An etching apparatus according to a second aspect of the present invention is the etching apparatus according to the first aspect, and includes suction means disposed in both the first etching processing section and the second etching processing section. The conveying means conveys the etching target in a substantially horizontal direction with the etching target surface facing upward. The suction means sucks and removes the etchant sprayed from the 1-fluid nozzle and the 2-fluid nozzle onto the surface to be etched.

In the above method and apparatus, the etching solution sprayed from the 1-fluid nozzle and the 2-fluid nozzle is removed early from the etching target surface. Therefore, it is possible to prevent the etching solution from staying which can be an obstacle to spraying the etching solution, and to perform etching with high in-plane uniformity.

In the etching method and the etching apparatus according to the second aspect, the amount of the etching liquid sprayed from the two-fluid nozzle to the etching target surface with respect to the total amount of the etching liquid sprayed from the one-fluid nozzle and the two-fluid nozzle to the etching target surface. The ratio is preferably 2% or more and 50% or less.

According to the present invention, it is possible to obtain a suitable E / F while minimizing the consumption of compressed air.

It is a schematic structure figure showing typically an etching device concerning one embodiment of the present invention. It is an expanded sectional view of the printed wiring board for demonstrating an etching process, (a) shows the state before an etching process, (b) shows the ideal state after an etching process. It is a table | surface which shows the result of an etching test. It is a graph which shows the result of an etching test.

Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

First, an outline of a manufacturing method of a printed wiring board to which an etching method and an etching apparatus of the present embodiment are applied will be described with reference to a cross-sectional view of FIG.

As shown in FIG. 2A, a conductive layer (etched layer) such as a copper foil is formed on both surfaces of an insulating substrate (etching target) 1 made of a thermosetting resin such as an epoxy resin or other resins. 2) is formed with a film thickness of several to several tens of μm. The conductive layer 2 can be formed by any method such as pasting, plating, and vapor phase growth, and both surfaces of the substrate 1 become etching target surfaces.

Next, as shown in FIG. 2B, a resist film 3 is formed on the conductive layer 2 by a photolithography process (such as a dry film resist or a liquid resist), subjected to pattern exposure, and developed. Then, a resist film 3 is patterned on the conductive layer 2. The resist film 3 is formed on both sides of the substrate 1.

Next, as shown in FIG. 2C, the conductive layer 2 on both sides of the substrate 1 is subjected to an etching process using the resist film 3 as a mask. That is, the conductive layer 2 is etched along the pattern of the resist film 3 to form the wiring portion 2a.

After patterning the wiring portion 2a, the resist film 3 is peeled off by, for example, a strong alkaline solution or an organic solvent treatment. Thereby, a desired printed wiring board is formed.

The etching process for the conductive layer 2 using the resist film 3 as a mask is performed using the etching apparatus and method according to the present embodiment. FIG. 1 is a schematic configuration diagram schematically showing an etching apparatus according to the present embodiment.

In the etching processing chamber 11 of the etching apparatus 10, a conveyance path extending in a horizontal straight line from the inlet 14 on one side (left side in FIG. 1) toward the outlet 15 on the other side (right side in FIG. 1) is set. A plurality of conveying rollers (conveying means) 16 are provided in the conveying path. The conveyance roller 16 conveys the substrate 1 on which the resist film 3 is patterned in a substantially horizontal shape with one surface facing upward and the other surface facing the lower surface along the conveyance path.

The upper part in the etching processing chamber 11 is roughly divided into a first etching processing unit 12 that performs the first etching process and a second etching processing unit 13 that performs the second etching process. The first etching processing unit 12 on the inlet 14 side and the second etching processing unit 13 on the outlet 15 side are sequentially passed. A plurality of one-fluid nozzles 20 are arranged in the first etching processing section 12, and a plurality of two-fluid nozzles 30 are arranged in the second etching processing section 13. The 1-fluid nozzle 20 and the 2-fluid nozzle 30 may be fixed (stationary) or oscillated (oscillated) with respect to the transport path.

An etching solution 5 based on cupric chloride, ferric chloride or an alkaline substance is stored in the bottom of the etching processing chamber 11 below the transfer path. Each 1-fluid nozzle 20 is connected to a first etching solution supply pipe 21 for supplying the etching solution 5 stored in the etching processing chamber 11. The first etchant supply pipe 21 is provided with a first pump 22, a filter 24, and a pressure gauge 23, and the etchant 5 in the etching processing chamber 11 is filtered from the first pump 22 by the filter 24. After that, each fluid nozzle 20 is supplied at a predetermined pressure. The supply pressure of the etching liquid to the one fluid nozzle 20 is measured by the pressure gauge 23.

Each second fluid nozzle 30 is connected to a second etching solution supply pipe 31 for supplying the etching solution 5 stored in the etching processing chamber 11. The second etching solution supply pipe 31 is provided with a second pump 32, a filter 34, and a pressure gauge 33, and the etching solution 5 in the etching processing chamber 11 is filtered from the second pump 32 by the filter 34. After that, the two fluid nozzles 30 are supplied at a predetermined pressure. The supply pressure of the etching liquid to the two-fluid nozzle 30 is measured by the pressure gauge 33. The supply to the two-fluid nozzle 30 may use the first pump 22 and the filter 24 without using the second pump 32 and the filter 34.

Also, an air supply line 40 that supplies compressed air (pressurized air) generated by the gas supply source 41 is connected to each two-fluid nozzle 30. The air supply line 40 is provided with an air filter 42, a flow meter 43, and a pressure gauge 44. The gas supply source 41 is a fan, a compressor, a blower, or the like. The air supply amount to the two-fluid nozzle 30 is measured by the flow meter 43, and the air supply pressure is measured by the pressure gauge 44.

1 The fluid nozzle 20 sprays the etchant and sprays it onto the substrate 1. On the other hand, the two-fluid nozzle 30 mixes and jets the etching solution and air (pressurized air) separately supplied from different paths, and ejects the fine droplet etching solution from the one-fluid nozzle 20. The substrate 1 is sprayed with a striking force greater than 20.

The 1-fluid nozzle 20 and the 2-fluid nozzle 30 are respectively arranged above and below the conveyance path. The upper and lower one fluid nozzles 20 spray and spray an etching solution on the upper surface and the lower surface of the substrate 1 transported by the transport roller 16, respectively. Further, the upper and lower two-fluid nozzles 30 mix and spray an etching solution and air onto the upper and lower surfaces of the substrate 1 conveyed by the conveying roller 16.

A plurality of etching liquids are sucked and removed from the upper one fluid nozzle 20 and the two fluid nozzles 30 on the upper surface of the substrate 1 above the transport paths of the first and second etching processing units 12 and 13, respectively. A plurality of suction units (suction means) 50 are arranged and provided. Each suction unit 50 is formed on a suction pipe (not shown) extending substantially horizontally in a direction substantially orthogonal to the transport path so as to cover the entire width of the substrate 1 and an outer peripheral surface (lower surface in the present embodiment) of the suction pipe. It comprises a plurality of slit-like suction nozzles (not shown) that open toward the transport path, and the suction nozzles are arranged between the spraying regions of the etching liquid sprayed from the first fluid nozzle 20 and the second fluid nozzle 30, respectively. Then, a desired suction action is generated in the arrangement region.

Each suction pipe is connected to a suction port 52 a of an ejector 52 provided in the middle of the circulation line 54 via a suction line 51. Both ends of the circulation pipe line 54 communicate with the inside of the etching chamber 11, and a circulation pump 53 is provided in the middle to form a closed circuit. The circulation pump 53 pumps the etching solution 5 in the etching processing chamber 11, returns the pressure to the etching processing chamber 11 again with the ejector 52 applying pressure. When the etching liquid circulating through the circulation line 54 passes through the ejector 52, the suction port 52 a of the ejector 52 has a negative pressure, so that the etching liquid sprayed on the upper surface of the substrate 1 is sucked from the suction nozzle to the suction line. Aspirated through 51.

When the etching process is performed using the etching apparatus 10, on the surface side of the substrate 1 (conductive layer 2), in the first etching processing unit 12, a rough liquid droplet from the one fluid nozzle 20 is roughly etched. Etching process is performed. Next, in the second etching processing unit 13, a fine etching process is performed with an etching solution of fine droplets from the two-fluid nozzle 30. Therefore, even when processing a miniaturized wiring pattern, etching droplets can be pushed into the pattern of the resist film 3 on the conductive layer 2.

As described above, the two-fluid nozzle 30 is not used for all the etching processes, and the one-fluid nozzle 20 and the two-fluid nozzle 30 are effectively used together, which is preferable while minimizing the consumption of compressed air. E / F can be obtained.

In addition, since the etching solution sprayed from the 1-fluid nozzle 20 and the 2-fluid nozzle 30 is removed from the upper surface of the substrate 1 at an early stage, it is possible to prevent the etching solution from staying which can be an obstacle to the spraying of the etching solution. It is possible to perform etching with high in-plane uniformity.

Next, an etching test performed using the etching apparatus 10 will be described.

In this etching test, the ratio of the amount of etching solution sprayed from the two-fluid nozzle 30 to the etching target surface to the etching target surface from the one-fluid nozzle 20 and the two-fluid nozzle 30 is 0%, 2 %, 5%, 11%, 23%, 43%, and 100%, the amount of pressurized air used (L / min) and E / F (etch factor) were measured. E / F is the ratio of the etching depth (thickness of the layer to be etched) to the etching amount (undercut amount) in the lateral direction of the layer to be etched, and the larger the value, the better.

The following two types of pattern formation were performed on the etching target surface. In sample 1, L / S = 20/20 μm pattern was formed on a printed wiring board of 18 μm copper foil, and in sample 2, L / S = 50/50 μm pattern was formed on a printed wiring board of 35 μm copper foil. . As shown in FIG. 2C, L is the width of the wiring pattern (wiring portion 2a) that is the lower layer of the resist film 3, and S is the wiring pattern (adjacent wiring) that is the lower layer of each of the adjacent resist films 3. The distance between the patterns. In the case of pattern formation with L / S = 20/20 μm, the width of the wiring pattern and the distance between adjacent wiring patterns are both 20 μm.

Etching conditions for Sample 1 and Sample 2 were set such that the etching solution pressure in the one-fluid nozzle 20 was set to 0.2 MPa, and the etching solution pressure and the air pressure in the two-fluid nozzle 30 were both set to 0.3 MPa.

As a result of experimenting by changing the ratio of the number of 1 fluid nozzles and the number of 2 fluid nozzles, the E / F was as shown in FIGS. It has been found that the E / F is improved when the amount of liquid ejected using the two-fluid nozzle 30 is increased with respect to the total amount of liquid ejected onto the printed wiring board before pattern formation (see FIGS. 3 and 4). . However, when the amount of the spray liquid from the two-fluid nozzle 30 becomes a certain amount or more, the E / F does not change greatly, and the total sprayed amount from the one-fluid nozzle 20 and the two-fluid nozzle 30 is considered in consideration of the amount of pressurized air used. It was found that the ratio of the amount of spray from the two-fluid nozzle 30 to the ratio (the ratio of the amount of etching solution using the two-fluid nozzle 30) is preferably 50% or less. When the ratio of the amount of the etching solution from the two-fluid nozzle 30 exceeds 50%, 15,000 L / min or more of pressurized air is required. When using a commonly used oil-free screw compressor and supplying 0.3MPa of pressurized air at 15,000L / min or more, multiple compressors are required. I think it is reasonable. Further, it has been found that the ratio of the amount of the etching solution using the two-fluid nozzle 30 is preferably 2% or more in consideration of the improvement of E / F. From the above, it was found that the ratio of the spray amount from the two-fluid nozzle 30 to the total spray amount from the one-fluid nozzle 20 and the two-fluid nozzle 30 is preferably 2% or more and 50% or less.

As described above, the present invention has been described based on the above embodiment, but the present invention is not limited to the content of the above embodiment, and can be appropriately changed without departing from the present invention. is there.

For example, although the example in which the etching process is performed in one etching process chamber 11 has been described in the above embodiment, the etching process may be performed in a plurality of continuous etching process chambers. In this case, there may be an upstream etching chamber in which only the first etching processing section is provided and a downstream etching processing chamber in which only the second etching processing section is provided.

1: Substrate (object to be etched)
2: Conductive layer (layer to be etched)
3: Resist film 3
10: Etching device 12: First etching processing unit 13: Second etching processing unit 16: Conveying roller (conveying means)
20: 1 fluid nozzle 30: 2 fluid nozzle 50: suction unit (suction means)

Claims (6)

A first etching step of etching the etching target surface by spraying an etching liquid from one fluid nozzle and spraying the etching target surface on the etching target surface;
Second etching for further etching the etching target surface by mixing the etching liquid and gas and spraying from the two-fluid nozzle and spraying the etching liquid onto the etching target surface etched in the first etching step. A process,
In the second etching step, an etching solution of fine droplets is sprayed on the surface to be etched with a stronger striking force than in the first etching step than in the first etching step. The etching method according to claim 1,
The etching target surface is an upper surface of the etching target object,
The first etching step includes a first suction step of sucking and removing the etchant sprayed on the etching target surface from the one fluid nozzle,
The second etching step includes a second suction step of sucking and removing the etchant sprayed from the two-fluid nozzle onto the etching target surface. The etching method according to claim 2,
The ratio of the amount of etching liquid sprayed from the two-fluid nozzle to the etching target surface with respect to the total amount of etching liquid sprayed from the one-fluid nozzle and the two-fluid nozzle to the etching target surface is 2% to 50%. An etching method characterized by comprising: Transport means for transporting an etching object along a predetermined transport path that sequentially passes through the first etching processing section and the second etching processing section;
A one-fluid nozzle that is disposed in the first etching processing unit and sprays and sprays an etching liquid on an etching target surface of an etching target that is transferred by the transfer unit;
Two fluids that are arranged in the second etching processing unit and mixed and jetted and sprayed onto the surface to be etched of the etching target that is transported from the first etching processing unit by the transport unit A nozzle, and
The etching apparatus according to claim 2, wherein the two-fluid nozzle sprays an etching liquid in a fine droplet to the etching target surface with a stronger striking force than the one-fluid nozzle. The etching apparatus according to claim 4, wherein
A suction unit disposed in both the first etching processing unit and the second etching processing unit;
The conveying means conveys the etching object in a substantially horizontal direction with the etching object surface facing upward,
The suction device sucks and removes the etchant sprayed on the etching target surface from the first fluid nozzle and the second fluid nozzle, respectively. An etching apparatus according to claim 5, wherein
The ratio of the amount of etching liquid sprayed from the two-fluid nozzle to the etching target surface with respect to the total amount of etching liquid sprayed from the one-fluid nozzle and the two-fluid nozzle to the etching target surface is 2% to 50%. An etching apparatus characterized by that.

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