[go: up one dir, main page]

WO2014035087A1 - Module électroluminescent destiné à l'éclairage d'une surface - Google Patents

Module électroluminescent destiné à l'éclairage d'une surface Download PDF

Info

Publication number
WO2014035087A1
WO2014035087A1 PCT/KR2013/007413 KR2013007413W WO2014035087A1 WO 2014035087 A1 WO2014035087 A1 WO 2014035087A1 KR 2013007413 W KR2013007413 W KR 2013007413W WO 2014035087 A1 WO2014035087 A1 WO 2014035087A1
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
layer
circuit board
lens
mesas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2013/007413
Other languages
English (en)
Korean (ko)
Inventor
김은주
정승호
송영준
김다혜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seoul Semiconductor Co Ltd
Original Assignee
Seoul Semiconductor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seoul Semiconductor Co Ltd filed Critical Seoul Semiconductor Co Ltd
Publication of WO2014035087A1 publication Critical patent/WO2014035087A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0274—Optical details, e.g. printed circuits comprising integral optical means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10106—Light emitting diode [LED]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings
    • H05K3/284—Applying non-metallic protective coatings for encapsulating mounted components

Definitions

  • the present invention relates to a light emitting module, and more particularly to a light emitting module for a surface illumination having a lens.
  • a light emitting module for a surface illumination used in a light emitting module or a surface lighting apparatus for backlighting a liquid crystal display generally includes a lens for mounting a light emitting element on a circuit board and dispersing light emitted from the light emitting element at a wide angle. By uniformly dispersing the light emitted from the light emitting device by using the lens, a large area can be uniformly irradiated with a small number of light emitting devices.
  • FIG. 1 is a schematic cross-sectional view for describing a light emitting module according to the prior art.
  • the light emitting module includes a circuit board 100, a light emitting device 200, and a lens 300.
  • the circuit board 100 is a printed circuit board on which a conductive pattern (not shown) is formed.
  • the light emitting device 200 includes a main body 250 having a recess, a light emitting diode chip 210 mounted in the recess, and a molding part 230 covering the light emitting diode chip 210 in the recess.
  • the molding part 230 includes a phosphor for wavelength converting light emitted from the light emitting diode chip 210.
  • the light emitting device 200 is electrically connected to a conductive pattern (not shown) of the circuit board 100.
  • the lens 300 has legs 310, and the legs 310 are attached to the circuit board 100 and disposed on the light emitting device 200.
  • the lens 300 has an entrance surface 330 through which light is incident from the light emitting device 200 and an exit surface 350 through which the incident light is emitted.
  • the incident surface 330 is provided in the form of a recess in the lower portion of the lens 300.
  • the light emitting module according to the related art may implement uniform light over a large area by dispersing the light emitted from the light emitting device 200 through the lens 300.
  • the light emitting device 200 disposed on the circuit board 100 and the lens 300 mounted on the circuit board 100 through the legs 310 have a limitation in slimming of the light emitting module.
  • the main body 250 having the recess is adopted, the size of the light emitting device 200 is relatively large, and thus the size of the lens 300 is relatively increased.
  • there is a limit in dispersing light through the lens 300 because the directivity angle of the light emitted through the main body 250 is relatively narrow.
  • the light emitting diode chip 210, the light emitting device 200, and the lens 300 in the light emitting device 200 need to be precisely aligned.
  • the light emitting module according to the prior art has a limitation in reducing alignment tolerance because all of the light emitting diode chip 210, the light emitting device 200, and the lens 300 must be precisely positioned.
  • the problem to be solved by the present invention is to provide a light emitting module that can reduce the overall height.
  • Another object of the present invention is to provide a light emitting module that can reduce alignment tolerances.
  • Another object of the present invention is to provide a light emitting module capable of providing uniform light over a large area by adopting a light emitting diode suitable for a surface light source.
  • a light emitting module includes a circuit board; A light emitting device flip-bonded to the circuit board; And a lens coupled to the circuit board and dispersing light emitted from the light emitting element.
  • the light emitting device is a flip chip light emitting diode chip; And a wavelength conversion layer coated on the light emitting diode chip.
  • the wavelength conversion layer may cover the top and side surfaces of the light emitting diode chip. In a particular embodiment, the wavelength conversion layer may cover only the top surface of the LED chip.
  • the lens is coupled to the circuit board without employing conventional legs. Accordingly, the lower surface of the lens is closer to the upper surface of the circuit board, and the light emitting module is further slimmer.
  • the circuit board may have a protrusion on an upper surface thereof, and the lens may have a receiving groove accommodating the protrusion, and the lens may be coupled to the circuit board by receiving the protrusion.
  • a dam portion may be formed on the circuit board instead of the protrusion, and the lens may be coupled to the circuit board by receiving the dam portion.
  • the dam portion may be formed of a silicone resin or an optical sheet.
  • the light emitting module may further include an optical sheet attached to the circuit board and having an opening for exposing the light emitting device.
  • the lens may be inserted into an opening of the optical sheet and coupled to the circuit board.
  • the circuit board may include a recess, and the lens may be fitted into the recess and coupled to the circuit board.
  • the lens has an incident surface on which light emitted from the light emitting element is incident and an exit surface on which incident light is emitted.
  • the incident surface may be an inner surface of a recess located on the lower surface of the lens.
  • the recess may include a first recess and a second recess positioned at an inlet side of the first recess and surrounding the first recess.
  • the light emitting diode chip may include a first conductivity type semiconductor layer; A plurality of mesas spaced apart from each other on the first conductive semiconductor layer, each of the mesas including an active layer and a second conductive semiconductor layer; Reflective electrodes positioned on the plurality of mesas, respectively, for ohmic contact with a second conductivity-type semiconductor layer; And openings covering the plurality of mesas and the first conductivity type semiconductor layer, the openings being located in the upper region of each mesa and exposing the reflective electrodes, ohmic contacting the first conductivity type semiconductor layer, and the plurality of mesas. And a current spreading layer insulated from the light emitting diode chip, the light emitting diode chip being flip bonded to the circuit board.
  • the current spreading layer covers the plurality of mesas and the first conductivity type semiconductor layer, the current spreading performance is improved through the current spreading layer.
  • the first conductivity type semiconductor layer is continuous.
  • the plurality of mesas may have an elongated shape extending in parallel to each other in one direction, and the openings of the current spreading layer may be located at the same end side of the plurality of mesas. Therefore, a pad connecting the reflective electrodes exposed to the openings of the current spreading layer can be easily formed.
  • the current spreading layer may include a reflective metal such as Al. Accordingly, in addition to the light reflection by the reflective electrodes, the light reflection by the current spreading layer can be obtained, and thus, the light traveling through the plurality of mesas sidewalls and the first conductivity type semiconductor layer can be reflected.
  • the reflective electrodes may each include a reflective metal layer and a barrier metal layer. Further, the barrier metal layer may cover the top and side surfaces of the reflective metal layer. As a result, the reflective metal layer can be prevented from being exposed to the outside, and deterioration of the reflective metal layer can be prevented.
  • the light emitting diode chip may include: an upper insulating layer covering at least a portion of the current spreading layer and having openings exposing the reflective electrodes; And a second pad disposed on the upper insulating layer and connected to the reflective electrodes exposed through the openings of the upper insulating layer, and further comprising a first pad connected to the current spreading layer.
  • the first pad and the second pad may be formed in the same shape and size, and thus flip chip bonding may be easily performed.
  • the light emitting diode chip may further include a lower insulating layer positioned between the plurality of mesas and the current spreading layer to insulate the current spreading layer from the plurality of mesas.
  • the lower insulating layer may have openings positioned in the upper mesas and exposing the reflective electrodes.
  • each of the openings of the current spreading layer may have a wider width than the openings of the lower insulating layer so that all of the openings of the lower insulating layer are exposed. That is, sidewalls of the openings of the current spreading layer are located on the lower insulating layer.
  • the LED chip may further include an upper insulating layer covering at least a portion of the current spreading layer and having openings exposing the reflective electrodes. The upper insulating layer may cover sidewalls of the openings of the current spreading layer.
  • the lower insulating layer may be a reflective dielectric layer, such as a distributed Bragg reflector (DBR).
  • DBR distributed Bragg reflector
  • the LED chip may further include a growth substrate, and the growth substrate may be, for example, a sapphire substrate or a gallium nitride substrate.
  • the wavelength conversion layer covers the growth substrate to convert wavelengths of light emitted from the growth substrate to the outside.
  • the light emitting module can be made slim, and furthermore, the mounting tolerance of the light emitting module can be reduced by mounting the light emitting diode chip directly on the circuit board. Furthermore, the illumination intensity distribution can be improved by adopting a flip chip type light emitting diode chip having a relatively wide beam angle.
  • FIG. 1 is a cross-sectional view illustrating a light emitting module according to the prior art.
  • FIG. 2 is a cross-sectional view illustrating a light emitting module according to an embodiment of the present invention.
  • FIG 3 is a cross-sectional view for describing a light emitting module according to another embodiment of the present invention.
  • 4 to 7 are cross-sectional views illustrating various light emitting modules according to embodiments of the present invention.
  • FIGS. 8 to 12 are views for explaining a method of manufacturing a light emitting diode chip according to an embodiment of the present invention, in each of the drawings (a) is a plan view and (b) is a cross-sectional view taken along the cutting line A-A.
  • Figure 14 is a graph showing the directivity distribution of the conventional LED package 200 and the flip chip LED chip having a conformal coating layer of the present application (a) and (b), respectively.
  • FIG. 15 is a graph illustrating directions of distribution of light emitting modules using a conventional LED package 200 and light emitting modules using a flip chip type LED chip having a conformal coating layer of the present application as (a) and (b), respectively.
  • Figure 16 shows the illuminance distribution of the light emitting module combining 16 LED array and the lens
  • (a) is a conventional LED package having a 120-degree directivity
  • (b) is a flip-chip type light emitting diode to which the conformal coating layer according to the present application is applied The illuminance distribution of the light emitting module to which the chip is applied is shown.
  • FIG. 2 is a cross-sectional view illustrating a light emitting module according to an embodiment of the present invention.
  • the light emitting module includes a circuit board 100a, a dam unit 130, a light emitting diode chip 220, a conformal coated wavelength conversion layer 240, and a lens 300a.
  • the circuit board 100a is a printed circuit board on which a printed circuit (not shown) is formed.
  • the dam 130 is formed around the mounting area of the LED chip 220.
  • the dam unit 130 may be formed by attaching the optical sheet to the circuit board 100a in a ring shape, or may be formed using a silicone resin.
  • the light emitting diode chip 220 is mounted on the circuit board 100a.
  • the LED chip 220 is flip-bonded without using a bonding wire and connected to the printed circuit on the direct circuit board 100a. Since the present invention does not use a wire when bonding the LED chip 220 on the circuit board 100a, the molding part for protecting the wire is not required, and the wavelength conversion layer 240 is used to expose the bonding pad. You don't even have to remove a part of). Therefore, by adopting the flip type light emitting diode chip 220, color deviation and luminance unevenness may be eliminated and the module manufacturing process may be simplified as compared with using the light emitting diode chip using the bonding wire.
  • the light emitting diode chip 220 is a flip chip semiconductor chip formed of a gallium nitride-based compound semiconductor and may emit ultraviolet light or blue light.
  • a flip chip type semiconductor according to an embodiment of the present invention will be described in detail later with reference to FIGS. 8 to 13.
  • the wavelength conversion layer 240 covers the light emitting diode chip 220.
  • the conformal coated wavelength conversion layer 240 for example, a phosphor layer, may be formed on the light emitting diode chip 220, and may convert the light emitted from the light emitting diode chip 220 to wavelength convert.
  • the wavelength conversion layer 240 is coated on the LED chip 220 and may cover the top and side surfaces of the LED chip 220. In a particular embodiment, the wavelength conversion layer 240 may cover only the top surface of the LED chip 220.
  • the light emitted from the light emitting diode chip 220 and the wavelength conversion layer 240 may be used to implement light of various colors, and in particular, may implement mixed light such as white light.
  • the conformal coated wavelength conversion layer 240 may be previously formed on the LED chip 220 and mounted on the circuit board 100a together with the LED chip 220.
  • the lens 300a has an entrance surface 330 through which light is incident from the LED chip 220 and an exit surface 350 through which light is emitted from the lens 300a to the outside.
  • the incident surface 330 may be an inner surface of a bell shaped recess.
  • the lens 300a disperses the light incident from the light emitting diode chip 220 by using the refraction of the light at the entrance surface 330 and the refraction of the light at the exit surface 350.
  • the lens 300a also has an accommodating groove for accommodating the dam 130, and by accommodating the dam 130, the lens 300a may be coupled to the circuit board 100a. Since the lens 300a can be coupled to the circuit board 100a by using the dam 130 and the receiving groove of the lens 300a, the conventional leg portion 310 of FIG. 1 can be removed. Accordingly, the lower surface of the lens 300a is close to the upper surface of the circuit board 100a, and thus, the light emitting module may be further slimmed.
  • FIG 3 is a cross-sectional view for describing a light emitting module according to another embodiment of the present invention.
  • the light emitting module according to the present embodiment is generally similar to the light emitting module described with reference to FIG. 2, but there is a difference in the shape of the concave portion of the lens 300b.
  • the incident surface of the lens 300b includes a longitudinally shaped first recessed inner surface 331 and an inner surface 333 of the second recessed portion surrounding the first recessed portion.
  • the second recess is formed at the inlet side of the first recess and has a relatively wider width than the first recess.
  • the inner surface 333 of the second concave portion changes the traveling path of the light incident from the light emitting diode chip 220 to the upper side to prevent the light from being absorbed and lost by the dam unit 130.
  • FIG. 4 is a cross-sectional view for describing a light emitting module according to another embodiment of the present invention.
  • the light emitting module according to the present embodiment is generally similar to the light emitting module described with reference to FIG. 2, except that the circuit board 100b has the protrusion 150. That is, in the light emitting module of FIG. 2, the dam part 110 is formed to couple the lens 300a to the circuit board 100a. However, in the present exemplary embodiment, the protrusion 150 is provided on the circuit board 100b to provide the lens 300a. ) Are being combined.
  • the process of forming the dam unit 110 may be omitted by forming the protrusion 150 on the circuit board 100b instead of the dam unit 110, and the lens 300a may be more stably provided.
  • the second concave portion may be formed at the entrance of the first concave portion to prevent light loss caused by the protrusion 150.
  • FIG. 5 is a cross-sectional view for describing a light emitting module according to another embodiment of the present invention.
  • the light emitting module according to the present embodiment is generally similar to the light emitting module described with reference to FIG. 2, but a recess 150 is formed in the circuit board 100c and the lens 300c is recessed. There is a difference between the fitting and the fitting.
  • the dam unit 110 does not need to be formed, and the accommodation groove is formed in the lens 300c. no need.
  • a second recessed portion as described with reference to FIG. 3 may be formed.
  • FIG. 6 is a cross-sectional view for describing a light emitting module according to another embodiment of the present invention.
  • the light emitting module according to the present embodiment is generally similar to the light emitting module described with reference to FIG. 5, but has an optical sheet having an opening 175 for coupling the lens 300c to the circuit board 100d. There is a difference in that the 170 is attached and the lens 300c is coupled to the opening 175.
  • the opening 175 of the optical sheet 170 is used instead of the recess 150 in FIG. Therefore, it is not necessary to form the recess 150 in the circuit board 100d.
  • FIG. 7 is a cross-sectional view for describing a light emitting module according to another embodiment of the present invention.
  • the light emitting module according to the present embodiment is substantially similar to the light emitting module described with reference to FIG. 2, but further includes a transparent resin 260 covering the light emitting diode chip 220 and the wavelength conversion layer 240. There is a difference.
  • the transparent resin 260 covers the light emitting device in the recess 330.
  • the transparent resin 260 may also be applied to the embodiments of FIGS. 3 to 6.
  • the transparent resin 260 protects the wavelength conversion layer 240 and the light emitting diode chip 220 from moisture.
  • FIGS. 8 to 12 are views for explaining a flip chip type light emitting diode chip manufacturing method according to an embodiment of the present invention, (a) is a cross-sectional view taken along the cutting line A-A (b) in each of the drawings.
  • a first conductive semiconductor layer 23 is formed on the growth substrate 21, and a plurality of mesas M spaced apart from each other on the first conductive semiconductor layer 23 are formed. Is formed.
  • the plurality of mesas M may include an active layer 25 and a second conductivity type semiconductor layer 27, respectively.
  • the active layer 25 is positioned between the first conductive semiconductor layer 23 and the second conductive semiconductor layer 27.
  • the reflective electrodes 30 are positioned on the plurality of mesas M, respectively.
  • the plurality of mesas M may be formed on the growth substrate 21 by forming an epitaxial layer including the first conductive semiconductor layer 23, the active layer 25, and the second conductive semiconductor layer 27. After growing using the same, the second conductive semiconductor layer 27 and the active layer 25 may be formed by patterning the first conductive semiconductor layer 23 to expose the first conductive semiconductor layer 23. Sides of the plurality of mesas M may be formed to be inclined by using a technique such as photoresist reflow. The inclined profile of the mesa (M) side improves the extraction efficiency of the light generated in the active layer 25.
  • the plurality of mesas M may have an elongated shape extending in parallel to each other in one direction as shown. This shape simplifies forming a plurality of mesas M of the same shape in the plurality of chip regions on the growth substrate 21.
  • the reflective electrodes 30 may be formed on each mesa M after the plurality of mesas M are formed, but is not limited thereto.
  • the second conductive semiconductor layer 27 may be grown and mesas. It may be formed in advance on the second conductivity-type semiconductor layer 27 before forming (M).
  • the reflective electrode 30 covers most of the upper surface of the mesa M, and has a shape substantially the same as the planar shape of the mesa M.
  • the reflective electrodes 30 may include a reflective layer 28 and may further include a barrier layer 29.
  • the barrier layer 29 may cover the top and side surfaces of the reflective layer 28.
  • barrier layer 29 can be formed to cover the top and side surfaces of reflective layer 28.
  • the reflective layer 28 may be formed by depositing and patterning an Ag, Ag alloy, Ni / Ag, NiZn / Ag, TiO / Ag layer.
  • the barrier layer 29 may be formed of Ni, Cr, Ti, Pt, Rd, Ru, W, Mo, TiW, or a composite layer thereof to prevent the metal material of the reflective layer from being diffused or contaminated.
  • an edge of the first conductivity type semiconductor layer 23 may also be etched. Accordingly, the upper surface of the substrate 21 may be exposed. Side surfaces of the first conductivity-type semiconductor layer 23 may also be formed to be inclined.
  • the plurality of mesas M may be formed to be located within the upper region of the first conductivity-type semiconductor layer 23. That is, the plurality of mesas M may be located in an island shape on the upper region of the first conductivity type semiconductor layer 23.
  • mesas M extending in one direction may be formed to reach the upper edge of the first conductivity-type semiconductor layer 23. That is, one side edge of the bottom surface of the plurality of mesas M coincides with one side edge of the first conductive semiconductor layer 23. Accordingly, the top surface of the first conductivity type semiconductor layer 23 is partitioned by a plurality of mesas M.
  • a lower insulating layer 31 covering the plurality of mesas M and the first conductive semiconductor layer 23 is formed.
  • the lower insulating layer 31 has openings 31a and 31b to allow electrical connection to the first conductive semiconductor layer 23 and the second conductive semiconductor layer 27 in a specific region.
  • the lower insulating layer 31 may have openings 31a exposing the first conductivity type semiconductor layer 23 and openings 31b exposing the reflective electrodes 30.
  • the openings 31a may be positioned near the edge between the mesas M and the edge of the substrate 21, and may have an elongated shape extending along the mesas M.
  • the openings 31b are limited to the upper portion of the mesa (M), and are located on the same end side of the mesas.
  • the lower insulating layer 31 may be formed of an oxide film such as SiO 2 , a nitride film such as SiN x, or an insulating film of SiON or MgF 2 using a technique such as chemical vapor deposition (CVD).
  • the lower insulating layer 31 may be formed of a single layer, but is not limited thereto and may be formed of multiple layers.
  • the lower insulating layer 31 may be formed of a distributed Bragg reflector (DBR) in which a low refractive material layer and a high refractive material layer are alternately stacked.
  • DBR distributed Bragg reflector
  • an insulating reflective layer having a high reflectance can be formed by laminating dielectric layers such as SiO 2 / TiO 2 or SiO 2 / Nb 2 O 5 .
  • a current spreading layer 33 is formed on the lower insulating layer 31.
  • the current spreading layer 33 covers the plurality of mesas M and the first conductive semiconductor layer 23.
  • the current spreading layer 33 has openings 33a located in the upper region of each mesa M to expose the reflective electrodes.
  • the current spreading layer 33 may be in ohmic contact with the first conductivity type semiconductor layer 23 through the openings 31a of the lower insulating layer 31.
  • the current spreading layer 33 is insulated from the plurality of mesas M and the reflective electrodes 30 by the lower insulating layer 31.
  • the openings 33a of the current spreading layer 33 have a larger area than the openings 31b of the lower insulating layer 31, respectively, to prevent the current spreading layer 33 from connecting to the reflective electrodes 30. Have Thus, sidewalls of the openings 33a are located on the lower insulating layer 31.
  • the current spreading layer 33 is formed over almost the entire area of the substrate 31 except for the openings 33a. Thus, current can be easily dispersed through the current spreading layer 33.
  • the current spreading layer 33 may include a high reflective metal layer such as an Al layer, and the high reflective metal layer may be formed on an adhesive layer such as Ti, Cr, or Ni.
  • a protective layer of a single layer or a composite layer structure such as Ni, Cr, Au, or the like may be formed on the highly reflective metal layer.
  • the current spreading layer 33 may have, for example, a multilayer structure of Ti / Al / Ti / Ni / Au.
  • an upper insulating layer 35 is formed on the current spreading layer 33.
  • the upper insulating layer 35 has openings 35b exposing the current spreading layer 33 and openings 35b exposing the reflective electrodes 30.
  • the opening 35a may have an elongated shape in a direction perpendicular to the longitudinal direction of the mesa M, and has a relatively large area compared to the openings 35b.
  • the openings 35b expose the reflective electrodes 30 exposed through the openings 33a of the current spreading layer 33 and the openings 31b of the lower insulating layer 31.
  • the openings 35b may have a smaller area than the openings 33a of the current spreading layer 33, and may have a larger area than the openings 31b of the lower insulating layer 31. Accordingly, sidewalls of the openings 33a of the current spreading layer 33 may be covered by the upper insulating layer 35.
  • the upper insulating layer 35 may be formed using an oxide insulating layer, a nitride insulating layer, a mixed layer or a cross layer of these insulating layers, or a polymer such as polyimide, teflon, parylene, or the like.
  • a first pad 37a and a second pad 37b are formed on the upper insulating layer 35.
  • the first pad 37a connects to the current spreading layer 33 through the opening 35a of the upper insulating layer 35
  • the second pad 37b connects the openings 35b of the upper insulating layer 35. It is connected to the reflective electrodes 30 through.
  • the first pad 37a and the second pad 37b may be connected to bumps or used as pads for SMT to mount the light emitting diode to a submount, package, or printed circuit board.
  • the first and second pads 37a and 37b may be formed together in the same process, for example using photo and etching techniques or lift off techniques.
  • the first and second pads 37a and 37b may include, for example, an adhesive layer such as Ti, Cr, or Ni, and a highly conductive metal layer such as Al, Cu, Ag, or Au.
  • the first and second pads 37a and 37b may be formed so that the end ends thereof are coplanar, and thus the light emitting diode chip 220 may be formed on the conductive patterns having the same height on the circuit boards 100a to 100d. Can be flip bonded to.
  • the growth substrate 21 is divided into individual light emitting diode chip units to complete the light emitting diode chip.
  • the growth substrate 21 may be removed from the LED chip before or after it is divided into individual LED chip units.
  • the light emitting diode chip includes a first conductive semiconductor layer 23, mesas M, reflective electrodes 30, and a current spreading layer 33, and includes a growth substrate 21 and a lower insulating layer 31.
  • the upper insulating layer 35 may include a first pad 37a and a second pad 37b.
  • the substrate 21 may be a growth substrate for growing gallium nitride-based epi layers, such as sapphire, silicon carbide, silicon, or gallium nitride substrate.
  • the substrate 21 is, for example, a sapphire substrate, it may have a thickness of 200um or more, preferably 250um or more.
  • the first conductive semiconductor layer 23 is continuous, and the plurality of mesas M are spaced apart from each other on the first conductive semiconductor layer 23.
  • the mesas M include the active layer 25 and the second conductivity-type semiconductor layer 27 as described with reference to FIG. 8 and have an elongated shape extending toward one side.
  • the mesas M may be a stacked structure of a gallium nitride compound semiconductor.
  • the mesas M may be limitedly positioned in an upper region of the first conductivity-type semiconductor layer 23, as shown in FIG. 8.
  • the mesas M may extend to one edge of the upper surface of the first conductivity-type semiconductor layer 23 in one direction, as shown in FIG. 6, and thus the first conductivity-type semiconductor layer 23.
  • the upper surface of the can be divided into a plurality of areas. Accordingly, it is possible to alleviate the concentration of the current near the edge of the mesas (M) to further enhance the current distribution performance.
  • the reflective electrodes 30 are respectively positioned on the plurality of mesas M to make ohmic contact with the second conductivity-type semiconductor layer 27.
  • the reflective electrodes 300 may include a reflective layer 28 and a barrier layer 29, and the barrier layer 29 may cover the top and side surfaces of the reflective layer 28.
  • the current spreading layer 33 covers the plurality of mesas M and the first conductive semiconductor layer 23.
  • the current spreading layer 33 has openings 33a located in the upper region of each mesa M and exposing the reflective electrodes 30.
  • the current spreading layer 33 is also ohmic contacted to the first conductivity type semiconductor layer 23 and insulated from the plurality of mesas M.
  • the current spreading layer 33 may include a reflective metal such as Al.
  • the current spreading layer 33 may be insulated from the plurality of mesas M by the lower insulating layer 31.
  • the lower insulating layer 31 may be positioned between the plurality of mesas M and the current spreading layer 33 to insulate the current spreading layer 33 from the plurality of mesas M.
  • the lower insulating layer 31 may have openings 31b disposed in the upper region of each mesa M to expose the reflective electrodes 30, and may expose the first conductivity-type semiconductor layer 23. It may have openings 31a.
  • the current spreading layer 33 may be connected to the first conductivity type semiconductor layer 23 through the openings 31a.
  • the openings 31b of the lower insulating layer 31 have a smaller area than the openings 33a of the current spreading layer 33 and are all exposed by the openings 33a.
  • the upper insulating layer 35 covers at least a portion of the current spreading layer 33.
  • the upper insulating layer 35 has openings 35b exposing the reflective electrodes 30.
  • the upper insulating layer 35 may have an opening 35a exposing the current spreading layer 33.
  • the upper insulating layer 35 may cover sidewalls of the openings 33a of the current spreading layer 33.
  • the first pad 37a may be positioned on the current spreading layer 33, and may be connected to the current spreading layer 33 through, for example, an opening 35a of the upper insulating layer 35.
  • the second pad 37b is connected to the reflective electrodes 30 exposed through the openings 35b.
  • the first pad 37a and the second pad 37b may have upper ends disposed at the same height.
  • the current spreading layer 33 covers almost the entire area of the mesas M and the first conductivity type semiconductor layer 23 between the mesas M. Thus, current can be easily dispersed through the current spreading layer 33.
  • the current spreading layer 23 includes a reflecting metal layer such as Al, or the lower insulating layer is formed as an insulating reflecting layer so that the light not reflected by the reflecting electrodes 30 is reflected by the current spreading layer 23 or the lower insulating layer. (31) can be used to reflect, thereby improving light extraction efficiency.
  • the flip chip light emitting diode chip according to the present embodiment may have a relatively wide directivity distribution.
  • FIG. 14 is a graph illustrating a direct distribution of a flip chip type light emitting diode chip 240 having a conventional light emitting diode package 200 and a conformal coating layer 220 according to an embodiment of the present disclosure.
  • the conventional LED package 200 has a directing angle of about 120 degrees as a substantially same directing angle with respect to the X and Y directions.
  • the flip-chip type light emitting diode chip 240 of the present application exhibits a direction angle of about 140 degrees which is substantially the same with respect to the X direction and the Y direction, and when the conformal coating layer is applied, as shown in FIG. Indicates the orientation angle.
  • Figure 15 (a) shows the directivity distribution of the light emitting module using a conventional light emitting diode package having a directivity angle of 120 degrees
  • Figure 15 (b) is coated with a conformal coating layer 220 having a directivity angle of 145 degrees of the present application
  • the directivity distribution of the light emitting module using the flip chip light emitting diode chip 240 is shown.
  • the light directivity distribution in the uniaxial direction was simulated using a light emitting element and a lens having the same illuminance distribution in each direction.
  • the light directivity distribution shows the luminous intensity according to the directivity angle at a point 5 m away from each light emitting element.
  • FIG. 16 illustrates an illuminance distribution of a light emitting module in which 16 light emitting devices are arranged in a 4 ⁇ 4 matrix on a circuit board and a lens is coupled to each light emitting device.
  • b) shows the illuminance distribution of the light emitting module in which the flip chip type light emitting diode chip 240 to which the conformal coating layer 220 is applied is arranged.
  • the distance between the light sources was 100 mm and the illuminance distribution measurement distance was 23 mm.
  • FIG. 16 (a) the light uniformity was 79.4%, and in FIG. 16 (b), the light uniformity was 84.6%. Even when comparing FIGS. 16 (a) and (b) with the naked eye, FIG. In this case, it can be seen that the light diffusivity of the outside is superior to that of FIG.

Landscapes

  • Led Device Packages (AREA)
PCT/KR2013/007413 2012-08-31 2013-08-16 Module électroluminescent destiné à l'éclairage d'une surface Ceased WO2014035087A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2012-0096182 2012-08-31
KR1020120096182A KR102001665B1 (ko) 2012-08-31 2012-08-31 면 조명용 발광 모듈

Publications (1)

Publication Number Publication Date
WO2014035087A1 true WO2014035087A1 (fr) 2014-03-06

Family

ID=50183845

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2013/007413 Ceased WO2014035087A1 (fr) 2012-08-31 2013-08-16 Module électroluminescent destiné à l'éclairage d'une surface

Country Status (2)

Country Link
KR (1) KR102001665B1 (fr)
WO (1) WO2014035087A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110504349A (zh) * 2018-05-18 2019-11-26 深圳市聚飞光电股份有限公司 Led器件及发光装置
CN110504351A (zh) * 2018-05-18 2019-11-26 深圳市聚飞光电股份有限公司 Led光源器件及发光装置
CN112992877A (zh) * 2021-02-05 2021-06-18 业成科技（成都）有限公司 倒装发光二极管及其制造方法与背光模组

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022092454A1 (fr) * 2020-10-27 2022-05-05 삼성전자주식회사 Dispositif d'affichage et dispositif de source de lumière associé
EP4177973A4 (fr) 2020-10-27 2023-09-27 Samsung Electronics Co., Ltd. Dispositif d'affichage et dispositif de source de lumière associé

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100609118B1 (ko) * 2005-05-03 2006-08-08 삼성전기주식회사 플립 칩 발광다이오드 및 그 제조방법
KR20060132298A (ko) * 2005-06-17 2006-12-21 삼성전기주식회사 발광소자 패키지
KR100869573B1 (ko) * 2007-05-29 2008-11-21 삼성전기주식회사 조명용 광학소자의 확산렌즈, 조명용 광학소자 및 그조명장치
JP2011159970A (ja) * 2010-01-28 2011-08-18 Lg Innotek Co Ltd 発光素子パッケージ
JP2012028161A (ja) * 2010-07-23 2012-02-09 Stanley Electric Co Ltd フレキシブル基板を用いた信号灯具
KR20120014391A (ko) * 2010-08-09 2012-02-17 엘지이노텍 주식회사 발광 소자 및 이를 구비한 조명 시스템

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100604602B1 (ko) * 2004-05-19 2006-07-24 서울반도체 주식회사 발광 다이오드 렌즈 및 그것을 갖는 발광 다이오드

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100609118B1 (ko) * 2005-05-03 2006-08-08 삼성전기주식회사 플립 칩 발광다이오드 및 그 제조방법
KR20060132298A (ko) * 2005-06-17 2006-12-21 삼성전기주식회사 발광소자 패키지
KR100869573B1 (ko) * 2007-05-29 2008-11-21 삼성전기주식회사 조명용 광학소자의 확산렌즈, 조명용 광학소자 및 그조명장치
JP2011159970A (ja) * 2010-01-28 2011-08-18 Lg Innotek Co Ltd 発光素子パッケージ
JP2012028161A (ja) * 2010-07-23 2012-02-09 Stanley Electric Co Ltd フレキシブル基板を用いた信号灯具
KR20120014391A (ko) * 2010-08-09 2012-02-17 엘지이노텍 주식회사 발광 소자 및 이를 구비한 조명 시스템

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110504349A (zh) * 2018-05-18 2019-11-26 深圳市聚飞光电股份有限公司 Led器件及发光装置
CN110504351A (zh) * 2018-05-18 2019-11-26 深圳市聚飞光电股份有限公司 Led光源器件及发光装置
CN112992877A (zh) * 2021-02-05 2021-06-18 业成科技（成都）有限公司 倒装发光二极管及其制造方法与背光模组
CN112992877B (zh) * 2021-02-05 2022-11-22 业成科技（成都）有限公司 倒装发光二极管及其制造方法与背光模组

Also Published As

Publication number Publication date
KR102001665B1 (ko) 2019-07-18
KR20140029911A (ko) 2014-03-11

Similar Documents

Publication Publication Date Title
WO2014069880A1 (fr) Lentille et module d'émission de lumière pour éclairage par la surface
WO2012020901A1 (fr) Diode électroluminescente présentant un rendement optimisé d'extraction lumineuse
KR102013364B1 (ko) 발광 다이오드 및 그것의 어플리케이션
KR20150024125A (ko) 면 조명용 렌즈 및 발광 모듈
WO2014178583A1 (fr) Module à diode électroluminescente comportant une diode électroluminescente assemblée au moyen de pâte à abraser, et diode électroluminescente
WO2012108636A2 (fr) Dispositif électroluminescent à couche de conversion de longueur d'onde
WO2014182104A1 (fr) Module de source lumineuse et unité de rétroéclairage dotée de celui-ci
WO2021085935A1 (fr) Élément électroluminescent pour affichage et appareil d'affichage le comportant
WO2014088201A1 (fr) Diode électroluminescente et application associée
WO2015064883A1 (fr) Module de source de lumière et unité de rétroéclairage dotée de celui-ci
WO2016148424A1 (fr) Élément d'émission de lumière comprenant un substrat métallique
WO2016190644A1 (fr) Dispositif electroluminescent et lampe de véhicule comprenant celui-ci
WO2010011074A2 (fr) Diode électroluminescente et procédé de fabrication, et dispositif électroluminescent et procédé de fabrication
WO2016204482A1 (fr) Élément électroluminescent comportant une pluralité d'unités de conversion de longueur d'onde, et procédé de fabrication de cet élément
WO2021054702A1 (fr) Élément électroluminescent pour affichage, et boîtier électroluminescent le comprenant
WO2014035087A1 (fr) Module électroluminescent destiné à l'éclairage d'une surface
WO2017010701A1 (fr) Diode électroluminescente comprenant une électrode transparente zno
WO2016178487A1 (fr) Dispositif émetteur de rayons ultraviolets
WO2022065865A1 (fr) Élément électroluminescent à haut rendement, pixel unitaire le comportant et dispositif d'affichage le comportant
WO2020241993A1 (fr) Diode électroluminescente verticale
WO2016195286A1 (fr) Diode électroluminescente
WO2018174425A1 (fr) Diode électroluminescente comprenant un stratifié de réflecteur de bragg distribué
WO2016036067A1 (fr) Diode électroluminescente
WO2014193109A1 (fr) Diode électroluminescente comportant une pluralité d'éléments électroluminescents et son procédé de fabrication
KR102475409B1 (ko) 금속 벌크를 포함하는 발광 소자

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13832381

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 13832381

Country of ref document: EP

Kind code of ref document: A1