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WO2014010211A1 - Module électroluminescent - Google Patents

Module électroluminescent Download PDF

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Publication number
WO2014010211A1
WO2014010211A1 PCT/JP2013/004178 JP2013004178W WO2014010211A1 WO 2014010211 A1 WO2014010211 A1 WO 2014010211A1 JP 2013004178 W JP2013004178 W JP 2013004178W WO 2014010211 A1 WO2014010211 A1 WO 2014010211A1
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WO
WIPO (PCT)
Prior art keywords
phosphor
light emitting
conversion layer
wavelength conversion
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2013/004178
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English (en)
Japanese (ja)
Inventor
雄壮 前野
岩崎　剛
大長　久芳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koito Manufacturing Co Ltd
Original Assignee
Koito Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Koito Manufacturing Co Ltd filed Critical Koito Manufacturing Co Ltd
Priority to JP2014524640A priority Critical patent/JPWO2014010211A1/ja
Publication of WO2014010211A1 publication Critical patent/WO2014010211A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins

Definitions

  • the present invention relates to a light emitting module.
  • LEDs light-emitting diodes
  • a technique for obtaining a light-emitting module that emits light of a color different from the color of light emitted from the light-emitting element by converting the wavelength of light emitted from the light-emitting element such as an LED using a phosphor or the like are known.
  • a technique has been proposed in which, for example, a ceramic layer including a wavelength conversion material is disposed in the path of light emitted by the light emitting layer (for example, , See Patent Document 1).
  • the present invention has been made in view of such a situation, and an object thereof is to provide a technology capable of realizing a highly efficient light emitting module.
  • a light emitting module includes a light emitting element that emits ultraviolet light or short wavelength visible light, and a first phosphor that emits blue light when excited by ultraviolet light or short wavelength visible light. And a second wavelength conversion layer having a second phosphor that is excited by ultraviolet light or short-wavelength visible light and emits yellow light.
  • the first wavelength conversion layer and the second wavelength conversion layer are laminated on the light emitting surface of the light emitting element, and at least one of the first wavelength conversion layer and the second wavelength conversion layer is a ceramic layer.
  • the second phosphor has a maximum excitation spectrum intensity of Imax in a wavelength region of 300 nm or more, Ia, and the excitation spectrum intensity at the peak wavelength of ultraviolet light or short-wavelength visible light emitted from the light emitting element is Ia. Imax ⁇ Ia is satisfied.
  • the second phosphor since the second phosphor has high excitation spectrum intensity at the peak wavelength of ultraviolet light or short-wavelength visible light emitted from the light-emitting element, the light from the light-emitting element can be efficiently converted into yellow light.
  • the first wavelength conversion layer may be disposed between the light emitting element and the second wavelength conversion layer, and the second wavelength conversion layer may be a ceramic layer.
  • the second phosphor When the maximum intensity of the excitation spectrum in the wavelength region of 300 nm or more is Imax and the intensity of the excitation spectrum at the peak wavelength of visible light emitted from the first phosphor is Ib, the second phosphor has Ib ⁇ 0.8 ⁇ Imax. Meet. Thereby, in the 2nd fluorescent substance, absorption of the light which a 1st fluorescent substance emits can be suppressed.
  • the first wavelength conversion layer is configured by dispersing the first phosphor in a transparent sealing material, and may have a thickness of 15 to 1000 ⁇ m.
  • the first wavelength conversion layer may contain 0.5 to 35% by volume of the first phosphor. Thereby, the light of the light emitting element which passes through the first wavelength conversion layer and reaches the second wavelength conversion layer can be increased.
  • the thickness of the second wavelength conversion layer may be 30 to 1000 ⁇ m.
  • a highly efficient light emitting module can be realized.
  • FIG. 1 is a cross-sectional view illustrating a schematic structure of a light emitting module according to Example 1.
  • FIG. It is sectional drawing which shows schematic structure of the light emitting module which concerns on a comparative example. It is a figure which shows the measurement result of the transmittance
  • FIG. 6 is a cross-sectional view illustrating a schematic structure of a light emitting module according to Example 2.
  • FIG. It is a figure which shows the emission spectrum of the light emitting module which concerns on Example 2 and Comparative Example 1.
  • FIG. 6 is a cross-sectional view illustrating a schematic structure of a light emitting module according to Example 3.
  • FIG. It is sectional drawing which shows schematic structure of the light emitting module which concerns on the comparative example 2.
  • FIG. It is a figure which shows the measurement result of the transmittance
  • FIG. 6 is a cross-sectional view illustrating a schematic structure of a light emitting module according to Example 4.
  • FIG. It is sectional drawing which shows schematic structure of the light emitting module which concerns on the comparative example 3.
  • FIG. It is a figure which shows the emission spectrum of the light emitting module which concerns on Example 4 and Comparative Example 3.
  • FIG. 2 is a diagram showing an emission spectrum of the semiconductor light emitting device according to Example 1.
  • a white LED module combines a semiconductor light emitting element that emits light having a wavelength from near ultraviolet to blue with a phosphor that converts light emitted from the semiconductor light emitting element into visible light having a longer wavelength than that light. Is realized.
  • Examples of white LED modules include a blue LED chip and a YAG (Yttrium Aluminum Garnet) phosphor that emits yellow light, a blue LED chip and two types of fluorescent light that emit red and green, respectively.
  • a blue LED chip and a YAG (Yttrium Aluminum Garnet) phosphor that emits yellow light
  • a blue LED chip and two types of fluorescent light that emit red and green, respectively.
  • a phosphor layer in an LED module when a powdered phosphor is dispersed in a transparent sealing material (organic resin material, inorganic amorphous material, inorganic sol-gel material), the powdered phosphor acts as a filler. To do. Therefore, light loss occurs before the light emitted from the LED chip is extracted to the outside, which may be a cause of reducing the light emission efficiency of the light emitting module. This is due to the difference in refractive index between the phosphor and the sealing material, and this difference in refractive index causes scattering and reflection, resulting in light loss.
  • the phosphor layer is formed of a phosphor single component, there is no interface between the phosphor and other components in the layer, there is no difference in refractive index, and the above-mentioned light loss is greatly increased. To be reduced. As a result, the luminous efficiency of the LED module can be increased as compared with a case where a powdered phosphor is dispersed in a transparent resin to form a phosphor layer.
  • YAG is the only phosphor that has been successfully made into translucent ceramics while maintaining high quantum efficiency.
  • the blue LED has higher directivity of light emission than the translucent ceramic YAG, so that the colors are separated.
  • a technique of adding a scatterer component to the translucent ceramics YAG is effective, but on the other hand, the transmittance of the ceramics YAG is lowered and a sufficient luminous flux cannot be obtained.
  • such a white LED module is suitable for realizing white light having a high color temperature of about daylight white, but it is difficult to form light of low color temperature such as warm white and light bulb color. And in order to form light of these low color temperatures, it is common to mix phosphors that absorb blue light and emit red light, but a red ring is easily formed on the outer periphery of the light emitting surface, It tends to lead to color separation.
  • the light emitting module absorbs ultraviolet light and short wavelength visible light, and a semiconductor light emitting element such as an LED chip that emits ultraviolet light and short wavelength visible light (for example, visible light having a wavelength from purple to near ultraviolet).
  • a semiconductor light emitting element such as an LED chip that emits ultraviolet light and short wavelength visible light (for example, visible light having a wavelength from purple to near ultraviolet).
  • a phosphor layer having a phosphor that emits light, and the phosphor layer may be a ceramic layer densely sintered with a phosphor single component. Moreover, it is preferable that a ceramic layer has translucency.
  • the phosphor may be of one type or a plurality of types as long as a desired emission color can be obtained as a light emitting module.
  • At least one kind of phosphor layer may be a ceramic layer.
  • a phosphor layer having a shape in which the powder phosphor is sealed with a transparent sealing material organic resin material, inorganic amorphous material, inorganic sol-gel material
  • a transparent sealing material organic resin material, inorganic amorphous material, inorganic sol-gel material
  • the phosphor layer that emits light with the highest visibility is arranged on the uppermost layer (light extraction surface side).
  • the translucent ceramic phosphor is characterized by its high spectral transmittance, and has a transmittance (when measured in air) of 70 to 85%, preferably 80% in the wavelength range of 350 to 900 nm including the visible light region. That's it. However, this is not the case in the absorption band of the phosphor itself (wavelength range of the excitation band).
  • the theoretical maximum transmittance (measured in air) is uniquely determined by the refractive index of the phosphor itself.
  • the transmittance only in the phosphor medium is 80 to 100%, preferably 90% or more. However, this is not the case in the absorption band of the phosphor itself (wavelength range of the excitation band).
  • the translucent ceramic phosphor when the translucent ceramic phosphor is mounted on the light emitting module, the phosphor layer is processed to have a thickness of 40 to 2000 ⁇ m, and preferably 80 to 2000 ⁇ m considering workability.
  • the surface of the translucent ceramic phosphor is roughened and patterned by various processes such as Fresnel lens processing, V-groove processing, laser processing, nanoprinting processing, ion milling, and sandblasting.
  • a white transparent material such as resin or glass having an arbitrary refractive index may be applied and formed into a film.
  • the translucent ceramic phosphor is excellent in workability
  • the light extraction direction and orientation can be controlled by, for example, prism shape processing, lens shape processing, various step processing, and vapor deposition of reflectors.
  • these shape control can also give a desired shape without said process by shape
  • mirror polishing and the total reflection effect that accompanies it it is possible to dimm only a predetermined part, guide the light, control the light extraction part, and the like.
  • the transmittance of the phosphor layer having a shape in which the powdered phosphor is sealed with a transparent sealing material (organic resin material, inorganic amorphous material, inorganic sol-gel material) or the like is the transmittance of the translucent ceramic phosphor.
  • a sealed phosphor layer may be used, and the manufacturing cost can be reduced.
  • the spectral transmittance of the sealed phosphor layer is in the range of 60 to 85% (measured in air) in the wavelength range of 350 to 900 nm including the visible light range, preferably 65% or more. is there.
  • a fine particle raw material of the phosphor is prepared, and an appropriate sintering aid is added as necessary. Thereafter, the phosphor fine particle material is molded by uniaxial pressure molding, CIP molding (cold one pressure molding) or the like. Or it mixes with resin, such as PVA (polyvinyl alcohol) and PVB (polyvinyl butyral), is made into a slurry, and shape
  • resin such as PVA (polyvinyl alcohol) and PVB (polyvinyl butyral
  • a light emitting module includes a light emitting element that emits ultraviolet light or short wavelength visible light, and a first phosphor that emits blue light when excited by ultraviolet light or short wavelength visible light. And a second wavelength conversion layer having a second phosphor that is excited by ultraviolet light or short-wavelength visible light and emits yellow light.
  • the first wavelength conversion layer and the second wavelength conversion layer are laminated on the light emitting surface of the light emitting element, and at least one of the first wavelength conversion layer and the second wavelength conversion layer is a ceramic layer. is there.
  • an LED is described as an example of a light emitting element, but a laser diode (LD) element, an electroluminescence (EL) element, or the like can also be used.
  • the light emitting element preferably emits ultraviolet light or short wavelength visible light having a peak wavelength in the wavelength range of 350 to 420 nm.
  • white light is realizable using several types of fluorescent substance from which an emission spectrum differs, for example, the blue fluorescent substance and yellow fluorescent substance which concern on each Example.
  • white light can be realized by mixing blue light and yellow light without directly using light from the light emitting element.
  • the transmittance of the phosphor layer is improved and the scattering loss is greatly reduced, so that the efficiency of the light emitting module can be improved.
  • a white LED module as a light emitting module includes an LED chip that emits near ultraviolet light, a first phosphor (phosphor 1) that absorbs near ultraviolet light and emits blue light, and absorbs near ultraviolet light. And a second phosphor that emits yellow light (phosphor 2).
  • a novel white LED module can be obtained by forming at least one of the first phosphor and the second phosphor into a ceramic plate.
  • the blue light emitted from the first phosphor is, for example, light having a peak wavelength ⁇ p of about 400 to 500 nm.
  • the yellow light emitted from the second phosphor is, for example, light having a peak wavelength ⁇ p of about 500 to 620 nm, and more preferably light having a peak wavelength ⁇ in the vicinity of 555 nm at which the visibility reaches a peak.
  • a white LED module that combines a LED chip that emits near-ultraviolet light and a plurality of types of phosphors forms a white color substantially only by the fluorescence of the phosphors that emit light in all directions, so that color separation occurs. It ’s hard.
  • a phosphor that emits light at a relatively long wavelength among a plurality of types of phosphors absorbs the fluorescence of the phosphor that emits light at a relatively short wavelength and does not emit light. Therefore, as a preferred example of the present embodiment, the following phosphor 1 that emits light at a relatively short wavelength and phosphor 2 that emits light at a relatively long wavelength will be described.
  • the phosphor 1 is a blue phosphor that is excited by ultraviolet light or short-wavelength visible light and emits blue light.
  • M 1 is, Ca, Sr, and essential one or more kinds of Ba, some Mg , Zn, Cd, K, Ag, Tl can be replaced with elements of M 2 that require P and some of them are V, Si, As, Mn, Co, Cr, Mo, W, B X represents at least one halogen element, Re represents Eu 2+ and at least one rare earth element or Mn, and a represents 4.2 ⁇ a ⁇ 5.8.
  • B is 2.5 ⁇ b ⁇ 3.5
  • c is 0.8 ⁇ c ⁇ 1.4
  • d 0.01 ⁇ d ⁇ 0.1.
  • M 1 is at least one element selected from the group consisting of Ca, Sr, Ba, Zn, a is in the range of 0.001 ⁇ a ⁇ 0.5.
  • a phosphor having a general formula represented by M 1 1-a MgSi 2 O 8 : Eu 2+ a (M 1 is at least one element selected from the group consisting of Ca, Sr, Ba, Zn, a is in the range of 0.001 ⁇ a ⁇ 0.8.)
  • the phosphor 2 is a phosphor that emits green to yellow light when excited by ultraviolet light or short-wavelength visible light.
  • a phosphor (M II ) whose general formula is represented by (Ca 1-xyz w , Sr x , M II y , Eu z , M R w ) 7 (SiO 3 ) 6
  • X 2 is Mg, Ba or Zn
  • M R is a rare earth element or Mn
  • X is more halogen element essentially including Cl or Cl
  • x is 0.1 ⁇ x ⁇ 0.7
  • y is 0 ⁇ y ⁇ 0 .3
  • z is 0 ⁇ z ⁇ 0.4
  • w is in the range of 0 ⁇ w ⁇ 0.1.
  • Such a phosphor 2 is effective in suppressing color separation and hardly deviates in chromaticity because it hardly absorbs blue light emitted from the phosphor 1 even when mixed with the phosphor 1 described above. Further, by combining with a phosphor that emits blue light, it is possible to form a wide range of white colors from light bulb colors to daylight colors.
  • FIG. 1 is a cross-sectional view illustrating a schematic structure of the light emitting module according to the first embodiment.
  • the light emitting module 10 includes an element mounting substrate 12, a semiconductor light emitting element 14 flip-chip mounted on the element mounting substrate 12, and a first wavelength conversion provided on the light emitting surface of the semiconductor light emitting element 14.
  • the layer 16 and the second wavelength conversion layer 18 provided on the first wavelength conversion layer 16 are provided.
  • “provided on the layer” is not only directly provided on the layer but also indirectly provided on the layer via another member (such as an adhesive or a filter). It is also included.
  • the first wavelength conversion layer 16 is a general formula M 1 a (M 2 O 4 ) b X c: has a phosphor 1, represented by Re d.
  • the second wavelength conversion layer 18 is represented by a general formula (Ca 1-xyzw , Sr x , M II y , Eu z , M R w ) 7 (SiO 3 ) 6 X 2 .
  • the fluorescent substance 2 is provided.
  • the side surfaces of the stacked semiconductor light emitting element 14, first wavelength conversion layer 16, and second wavelength conversion layer 18 are covered with a light reflecting material 20.
  • Each of the first wavelength conversion layer 16 and the second wavelength conversion layer 18 is prepared by mixing pre-manufactured phosphor particles of sub-micron or less with an appropriate sintering aid and molding, and then adding uniaxially. Processing such as pressure molding, CIP molding, atmospheric pressure firing, HIP firing, etc. is performed, and thereafter, it is thinned and polished so as to have a thickness of 100 ⁇ m, thereby forming a translucent ceramic. In this case, Re d phosphors 1,2 so that the light emission color temperature of the white light emitting module is 5500K vicinity, Sr x, the concentration of Eu z are adjusted.
  • the first wavelength conversion layer 16 and the second wavelength conversion layer 18 which are translucent ceramic phosphors were processed into thicknesses of 100 ⁇ m and 1.2 mm square, respectively.
  • the semiconductor light emitting element 14 and the first wavelength conversion layer 16 and the first wavelength conversion layer 16 and the second wavelength conversion layer 18 are bonded with a sol-gel adhesive.
  • FIG. 2 is a cross-sectional view illustrating a schematic structure of a light emitting module according to a comparative example.
  • the light emitting module 22 is different from the light emitting module 10 according to the first embodiment in the configuration of the first wavelength conversion layer 24 and the second wavelength conversion layer 26.
  • the first wavelength conversion layer 24 is obtained by dispersing the same phosphor 1 powder as in Example 1 in a silicone resin.
  • the second wavelength conversion layer 26 is obtained by dispersing the same phosphor 2 powder as in Example 1 in a silicone resin.
  • Re d phosphors 1,2 so that the light emission color temperature of the white light emitting module is 5500K vicinity, Sr x, the concentration of Eu z are adjusted.
  • the first wavelength conversion layer 24 and the second wavelength conversion layer 26 were processed into thicknesses of 100 ⁇ m and 1.2 mm square, respectively. Silicone resin is adhered between the semiconductor light emitting element 14 and the first wavelength conversion layer 24 and between the first wavelength conversion layer 24 and the second wavelength conversion layer 26.
  • FIG. 3 is a diagram showing the measurement results of the transmittances of the first wavelength conversion layer 16 and the second wavelength conversion layer 18 according to the first embodiment.
  • FIG. 4 is a diagram showing the measurement results of the transmittances of the first wavelength conversion layer 24 and the second wavelength conversion layer 26 according to Comparative Example 1.
  • the first wavelength conversion layer 16 and the second wavelength conversion layer 18 according to Example 1 are the first wavelength conversion layer 24 and the second wavelength conversion layer according to Comparative Example 1.
  • 26 has a higher transmittance. That is, it can be seen that the layer obtained by converting the phosphor into ceramic has higher transmittance than the layer in which the phosphor is dispersed in the resin.
  • FIG. 5 is a diagram showing emission spectra of the light emitting modules according to Example 1 and Comparative Example 1.
  • each wavelength conversion layer used in Example 1 has a higher transmittance than each wavelength conversion layer used in Comparative Example 1. For this reason, in the light emitting module 10 according to Example 1, light loss due to scattering is reduced in each wavelength conversion layer. Therefore, the light emitting module 10 according to Example 1 has high emission intensity over almost the entire wavelength range.
  • Table 1 shows the luminous flux ratio, luminous efficiency ratio, and color temperature [K] of the light emitting modules according to the examples and comparative examples. Note that the current applied to the light emitting element is 0.7 A.
  • the light emitting module 10 according to Example 1 is a highly efficient light emitting module with a luminous flux approximately 1.35 times that of the light emitting module 22 according to Comparative Example 1. Therefore, the light emitting module 10 can save power.
  • FIG. 6 is a diagram showing the temperature dependence of the luminous flux in the light emitting modules according to Example 1 and Comparative Example 1.
  • the horizontal axis represents the junction temperature (Tj) of the light emitting module
  • the vertical axis represents the luminous flux as a relative value.
  • the light emitting module 10 according to Example 1 has less decrease in luminous flux as the junction temperature (Tj) increases compared to the light emitting module 22 according to Comparative Example 1.
  • the light emitting module 10 using the phosphor layer obtained by converting the phosphor into a ceramic as the wavelength conversion layer has high heat dissipation, it is possible to suppress a decrease in light flux accompanying a temperature rise. In other words, in the light emitting module 10, the temperature dependence of the light flux is reduced.
  • Example 2 As shown in FIGS. 3 and 4, when the first wavelength conversion layer 16 according to Example 1 and the first wavelength conversion layer 24 according to Comparative Example 1 using the phosphor 1 are compared, the ceramic layer and the sealing layer are compared. Although there is a difference in the form of a stop resin layer, there is no significant difference in transmittance. In the case of such a phosphor, even if a wavelength conversion layer in which the phosphor powder is sealed with a resin is used, the performance is hardly lowered, and the manufacturing cost can be reduced.
  • FIG. 7 is a cross-sectional view illustrating a schematic structure of the light emitting module according to the second embodiment.
  • the light emitting module 28 includes the shape, size, and emission color temperature, including the first wavelength conversion layer 24 (see Comparative Example 1) in which a phosphor is dispersed in a resin. 10 is the same configuration.
  • the first wavelength conversion layer may be prepared and cut in advance, and then the first wavelength conversion layer and the second wavelength conversion layer made of ceramics may be laminated.
  • the wavelength conversion layer is formed by applying the uncured resin of the first wavelength conversion layer onto the semiconductor light emitting element 14 flip-chip bonded to the element mounting substrate 12 by potting or the like, and then forming a second ceramic layer. You may produce by mounting and hardening a wavelength conversion layer. Note that the manufacturing method is not limited to these.
  • FIG. 8 is a diagram showing emission spectra of the light emitting modules according to Example 2 and Comparative Example 1.
  • the second wavelength conversion layer 18 used in Example 2 has a higher transmittance than the second wavelength conversion layer 26 used in Comparative Example 1. For this reason, in the light emitting module 28 according to Example 2, the light loss due to scattering is reduced particularly in the second wavelength conversion layer 26. Therefore, the light emitting module 28 according to Example 2 has high emission intensity over the entire wavelength range.
  • the light emitting module 28 according to Example 2 has a luminous flux approximately 1.28 times that of the light emitting module 22 according to Comparative Example 1, which reduces the manufacturing cost and increases the manufacturing cost. It is a light emitting module that achieves both efficiency and efficiency. Further, the light emitting module 28 having high efficiency can save power.
  • Example 3 The light emitting module according to Example 3 is characterized in that the order of stacking the first wavelength conversion layer and the second wavelength conversion layer according to Example 1 is changed.
  • FIG. 9 is a cross-sectional view illustrating a schematic structure of the light emitting module according to the third embodiment.
  • the light emitting module 30 is implemented including the shape, size, and emission color temperature, except that the stacking order of the first wavelength conversion layer 16 and the second wavelength conversion layer 18 is opposite to that of the light emitting module 10 according to the first embodiment.
  • the configuration is the same as that of the light emitting module 10 according to Example 1.
  • FIG. 10 is a cross-sectional view illustrating a schematic structure of a light emitting module according to Comparative Example 2.
  • the light emitting module 32 is a comparison including the shape, size, and emission color temperature, except that the stacking order of the first wavelength conversion layer 24 and the second wavelength conversion layer 26 is opposite to that of the light emitting module 22 according to Comparative Example 1.
  • the configuration is the same as that of the light emitting module 22 according to Example 1.
  • FIG. 11 is a graph showing the measurement results of the transmittance of the first wavelength conversion layer 16 and the second wavelength conversion layer 18 according to Example 3.
  • FIG. 12 is a diagram illustrating the measurement results of the transmittances of the first wavelength conversion layer 24 and the second wavelength conversion layer 26 according to Comparative Example 1.
  • the first wavelength conversion layer 16 and the second wavelength conversion layer 18 according to Example 3 are the same as the first wavelength conversion layer 24 and the second wavelength conversion layer according to Comparative Example 2, respectively.
  • 26 has a higher transmittance. That is, it can be seen that the first wavelength conversion layer and the second wavelength conversion layer obtained by converting the phosphor into ceramic have higher transmittance than the layer in which the phosphor is dispersed in the resin, regardless of the stacking order.
  • FIG. 13 is a diagram showing emission spectra of the light emitting modules according to Example 3 and Comparative Example 2.
  • each wavelength conversion layer used in Example 3 has a higher transmittance than each wavelength conversion layer used in Comparative Example 2. For this reason, in the light emitting module 30 according to Example 3, light loss due to scattering is reduced in each wavelength conversion layer. Therefore, the light emitting module 30 according to Example 3 has high emission intensity over almost the entire wavelength range.
  • the light emitting module 30 according to Example 3 has a luminous flux approximately 1.37 times that of the light emitting module 32 according to Comparative Example 2, and is a highly efficient light emitting module. is there.
  • the light emitting module 32 with high efficiency can save power.
  • FIG. 14 is a cross-sectional view illustrating a schematic structure of the light emitting module according to Example 4.
  • the light emitting module 34 further includes a third wavelength conversion layer 36 including the phosphor 2 that emits green light on the second wavelength conversion layer 18.
  • the configuration is substantially the same as that of the light emitting module 10 according to the first embodiment.
  • the third wavelength conversion layer 36 is formed by sealing the phosphor 2 whose general formula is represented by Ba 2-a MgSi 2 O 7 : Eu 2+ a with a resin.
  • the light emitting module 34 so that the emission color temperature of the white light emitting module is 5500K vicinity, the concentration of Re d of the phosphor 1 in the first wavelength conversion layer 16 is adjusted, the second wavelength conversion layer 18 The concentrations of Eu z and Sr x of the phosphor 2 in FIG. 3 are adjusted, and the concentration of Eu 2+ a of the phosphor 2 in the third wavelength conversion layer 36 is adjusted.
  • the thickness of each of the first wavelength conversion layer 16 and the second wavelength conversion layer 18 is 90 ⁇ m
  • the thickness of the third wavelength conversion layer 36 is 50 ⁇ m.
  • FIG. 15 is a cross-sectional view illustrating a schematic structure of a light emitting module according to Comparative Example 3.
  • the light emitting module 38 further includes a third wavelength conversion layer 36 including the phosphor 2 that emits green light on the second wavelength conversion layer 26.
  • the configuration is substantially the same as that of the light emitting module 22 according to Comparative Example 1.
  • the third wavelength conversion layer 36 is formed by sealing the phosphor 2 whose general formula is represented by Ba 2-a MgSi 2 O 7 : Eu 2+ a with a resin.
  • the light emitting module 38 like the light-emitting module 34 described above, so that the light emission color temperature of the white light emitting module is 5500K vicinity, the concentration of Re d of the phosphor 1 in the first wavelength conversion layer 24 is adjusted Then, the concentrations of Eu z and Sr x of the phosphor 2 in the second wavelength conversion layer 26 are adjusted, and the concentration of Eu 2+ a of the phosphor 2 in the third wavelength conversion layer 36 is adjusted.
  • the thickness of each of the first wavelength conversion layer 24 and the second wavelength conversion layer 26 is 90 ⁇ m, and the thickness of the third wavelength conversion layer 36 is 50 ⁇ m.
  • FIG. 16 is a diagram showing emission spectra of the light emitting modules according to Example 4 and Comparative Example 3.
  • the light emitting module 34 according to Example 4 has small light loss due to scattering in each wavelength conversion layer, and has higher light emission intensity over almost the entire wavelength region than the light emitting module 38 according to Comparative Example 3.
  • the light emitting module 34 according to Example 4 has a luminous flux approximately 1.40 times that of the light emitting module 38 according to Comparative Example 1, and is a highly efficient light emitting module. is there. Therefore, the light emitting module 34 can save power.
  • FIG. 17 is a diagram showing an emission spectrum of the semiconductor light emitting device according to Example 1.
  • FIG. 18 is a diagram showing emission spectra of the phosphor 2 according to Example 1 and the conventional YAG phosphor.
  • FIG. 19 is a diagram showing excitation spectra of the phosphor 2 according to Example 1 and a conventional YAG phosphor, and emission spectra of the phosphor 1 according to Example 1 and a conventional blue LED.
  • the emission spectrum (line L1) of the phosphor 2 according to Example 1 has a blue wavelength (about 450 to 500 nm) compared to the emission spectrum (line L2) of the YAG phosphor. Range).
  • a line L1 shown in FIG. 19 represents an excitation spectrum of the phosphor 2 emitting yellow light used in Example 1.
  • a line L2 indicates the excitation spectrum of the YAG phosphor.
  • the phosphor 2 may satisfy 0.5 ⁇ Imax ⁇ Ia, and may further satisfy 0.8 ⁇ Imax ⁇ Ia as the phosphor 2 illustrated in FIG.
  • the phosphor 2 according to the example has high excitation spectrum intensity at the peak wavelength of ultraviolet light or short wavelength visible light emitted from the light emitting element, the light of the light emitting element can be efficiently converted into yellow light.
  • the light emitting module which concerns on each Example emits a light emitting element by obtaining white by combining the different color (blue, yellow) each converted by multiple types of fluorescent substance (phosphor 1, phosphor 2). Compared with the case where white is obtained by combining light and light emitted from the phosphor (combination of YAG phosphor and blue LED chip), chromaticity deviation due to the light emission direction of the module is suppressed.
  • a line L4 shown in FIG. 19 shows an emission spectrum of the blue-emitting phosphor 1 used in Example 1.
  • a light emitting module in which a first wavelength conversion layer 16 including phosphor 1 is stacked on a semiconductor light emitting element 14 and a second wavelength conversion layer 18 including phosphor 2 is stacked thereon.
  • the blue light from the phosphor 1 of the first wavelength conversion layer 16 is wavelength-converted by the phosphor 2 of the second wavelength conversion layer 18, heat generation due to so-called Stokes loss occurs, and the light emission efficiency decreases. End up.
  • the phosphor 2 according to Example 1 has the maximum excitation spectrum intensity Imax in the wavelength region of 300 nm or more, and the excitation spectrum intensity at the peak wavelength (about 450 nm) of visible light emitted from the phosphor 1 according to Example 1.
  • Is Ib, Ib ⁇ 0.8 ⁇ Imax is satisfied.
  • the phosphor 2 may satisfy Ib ⁇ 0.5 ⁇ Imax, and may further satisfy Ib ⁇ 0.2 ⁇ Imax as the phosphor 2 illustrated in FIG. Thereby, in the phosphor 2, the absorption of light emitted from the phosphor 1 is reduced, and the Stokes loss is suppressed, so that a highly efficient light emitting module can be realized.
  • the phosphor concentration increases compared to a white LED module that combines a blue LED chip and a YAG phosphor. Tend to. This is because the light of the element is not directly used to realize the white color but is realized by the light emitted from the phosphor. For this reason, when the amount of the phosphor is large, the scattering effect by the phosphor is increased as described above, which may be a cause of a decrease in luminous efficiency.
  • the second wavelength conversion layer that emits yellow than the first wavelength conversion layer that emits blue emits light flux by arranging it on the emission surface side of the light emitting module.
  • the phosphor 2 included in the second wavelength conversion layer includes a relatively large amount of blue wavelength (in the range of about 450 to 500 nm) as described above. Therefore, the amount of blue-emitting phosphor 1 included in the first wavelength conversion layer can be reduced. In this case, it is also possible to select the first wavelength conversion layer in which the phosphor is dispersed in the resin.
  • each wavelength conversion layer will be described based on the configuration of the light emitting module 28 shown in Example 2.
  • a first wavelength conversion layer 24 in which a blue light emitting phosphor 1 is dispersed in a resin that is a transparent sealing material is laminated on a semiconductor light emitting element 14.
  • the second wavelength conversion layer 18 in which the yellow-emitting phosphor 2 is ceramicized is laminated thereon.
  • the color temperature of the headlamp is in the range of about 4000 to 6000K. Therefore, if the second wavelength conversion layer is a layer obtained by converting the phosphor 2 into a ceramic, and the first wavelength conversion layer is a layer in which the phosphor 1 is dispersed in a resin, in order to satisfy the light of the color temperature described above,
  • the upper limit amount of the concentration of the phosphor 1 contained in the first wavelength conversion layer 16 is 35 vol. %. As shown in Table 2, if the amount of the phosphor necessary for satisfying a desired color temperature is constant, the concentration of the phosphor 1 contained therein decreases as the thickness of the first wavelength conversion layer increases.
  • the thickness of the first wavelength conversion layer is preferably in the range of 15 to 1000 ⁇ m. More preferably, the thickness is in the range of 15 to 1000 ⁇ m. If thickness is 15 micrometers or more, the quantity of fluorescent substance 1 which can implement
  • the first wavelength conversion layer may contain 0.5 to 35% by volume of the phosphor 1. Thereby, the light of the light emitting element which passes through the first wavelength conversion layer and reaches the second wavelength conversion layer can be increased.
  • the light emitted from the phosphor 2 included in the second wavelength conversion layer combined with the first wavelength conversion layer contains a large amount of blue wavelength components as described above, it is included in the first wavelength conversion layer.
  • White light can be realized even if the amount of the phosphor 1 emitting blue light is reduced. That is, since the first wavelength conversion layer can be made very thin, the first wavelength conversion layer in which the phosphor 1 is dispersed in an adhesive resin such as a silicone resin is applied on the semiconductor light emitting element, and the second wavelength conversion layer is applied.
  • the second wavelength conversion layer can be fixed to the semiconductor light emitting device. That is, the semiconductor light emitting element, the first wavelength conversion layer, and the second wavelength conversion layer 18 can be stacked in one step.
  • the thickness of the second wavelength conversion layer may be appropriately selected according to the configuration of the first wavelength conversion layer, and is, for example, in the range of 30 to 1000 ⁇ m, preferably 50 to 300 ⁇ m. If the thickness is 30 ⁇ m or more, it is possible to prevent cracks and the like when it is made into ceramics. On the other hand, if thickness is 1000 micrometers or less, the fall of the brightness
  • FIG. 20 is a diagram for explaining a method of measuring the chromaticity of the light emitting module.
  • FIG. 21 is a diagram illustrating a change in chromaticity of the light emitting module depending on a measurement position.
  • an LED chip 46 that emits blue light or ultraviolet light is mounted on a substrate 42 via a submount 44.
  • a fluorescent member 48 is mounted on the light emitting surface of the LED chip 46.
  • the change in chromaticity Cx is large depending on the measurement position.
  • the UV-LED chip as the LED chip 46, the first wavelength conversion layer 24 having the phosphor 1 as the fluorescent member 48, and the second wavelength conversion layer 18 having the phosphor 2 see Example 2.
  • the change in chromaticity Cx depending on the measurement position is very small.
  • the configuration of the first and second wavelength conversion layers may be a configuration in which the phosphor is dispersed in an inorganic amorphous material or an inorganic sol-gel material, in addition to being ceramicized or dispersing the phosphor in a resin.
  • the inorganic amorphous material include a low melting point glass material.
  • the inorganic amorphous material include those having a processing temperature of 900 ° C. or lower, preferably 800 ° C. or lower.
  • an inorganic amorphous material having a transmittance of 70% or more, preferably 80% or more is preferable for light having a wavelength of 350 to 900 nm.
  • an inorganic amorphous material having a refractive index of 1.4 or more and 2.0 or less, preferably 1.6 or more and 2.0 or less is preferable.
  • the light emitting module is described by combining the blue phosphor and the yellow phosphor, but the color combination is not limited to these.
  • an aspect of the light emitting module is as follows: A light emitting element emitting ultraviolet light or short wavelength visible light; A first wavelength conversion layer having a first phosphor excited by the ultraviolet light or short wavelength visible light and emitting visible light; A second wavelength having a second phosphor that emits visible light having a peak wavelength longer than a peak wavelength of visible light that is excited by the ultraviolet light or short-wavelength visible light and emitted from the first phosphor.
  • a conversion layer, The first wavelength conversion layer and the second wavelength conversion layer are stacked on a light emitting surface of the light emitting element, At least one of the first wavelength conversion layer and the second wavelength conversion layer is a ceramic layer.
  • the light emitting module of the present invention can be used for various lamps such as lighting lamps, display backlights, vehicle lamps and the like.

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019050391A (ja) * 2018-10-25 2019-03-28 日亜化学工業株式会社 発光装置
WO2025094772A1 (fr) * 2023-10-30 2025-05-08 パナソニックＩｐマネジメント株式会社 Dispositif électroluminescent

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004168946A (ja) * 2002-11-21 2004-06-17 Nec Lighting Ltd 赤色発光螢光体およびそれを用いた発光素子
JP2004228464A (ja) * 2003-01-27 2004-08-12 Rohm Co Ltd 半導体発光装置
JP2008195779A (ja) * 2007-02-09 2008-08-28 Sharp Corp 発光装置
JP2009267039A (ja) * 2008-04-24 2009-11-12 Citizen Electronics Co Ltd 発光装置
JP2010006664A (ja) * 2008-06-30 2010-01-14 National Institute Of Advanced Industrial & Technology 緑色蛍光ガラス
US20100258828A1 (en) * 2009-12-02 2010-10-14 Renaissance Lighting Inc. Solid state light emitter with near-uv pumped nanophosphors for producing high cri white light
JP2010251621A (ja) * 2009-04-17 2010-11-04 Mitsubishi Chemicals Corp 半導体発光装置
JP2011513898A (ja) * 2008-02-21 2011-04-28 日東電工株式会社 透光性セラミックプレートを備える発光装置
JP2011181793A (ja) * 2010-03-03 2011-09-15 Koito Mfg Co Ltd 発光装置
JP2011243356A (ja) * 2010-05-17 2011-12-01 Koito Mfg Co Ltd 照明装置
JP2012018977A (ja) * 2010-07-06 2012-01-26 Toshiba Corp 発光デバイス

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101536199A (zh) * 2006-11-10 2009-09-16 皇家飞利浦电子股份有限公司 包括单片陶瓷发光转换器的照明系统
JP5487204B2 (ja) * 2009-05-15 2014-05-07 株式会社小糸製作所 発光モジュール、発光モジュールの製造方法、および灯具ユニット
JP2010267851A (ja) * 2009-05-15 2010-11-25 Koito Mfg Co Ltd 発光モジュール、発光モジュールの製造方法、および灯具ユニット
JP4974310B2 (ja) * 2010-10-15 2012-07-11 三菱化学株式会社 白色発光装置及び照明器具
JP5566263B2 (ja) * 2010-11-08 2014-08-06 株式会社小糸製作所 発光モジュール

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004168946A (ja) * 2002-11-21 2004-06-17 Nec Lighting Ltd 赤色発光螢光体およびそれを用いた発光素子
JP2004228464A (ja) * 2003-01-27 2004-08-12 Rohm Co Ltd 半導体発光装置
JP2008195779A (ja) * 2007-02-09 2008-08-28 Sharp Corp 発光装置
JP2011513898A (ja) * 2008-02-21 2011-04-28 日東電工株式会社 透光性セラミックプレートを備える発光装置
JP2009267039A (ja) * 2008-04-24 2009-11-12 Citizen Electronics Co Ltd 発光装置
JP2010006664A (ja) * 2008-06-30 2010-01-14 National Institute Of Advanced Industrial & Technology 緑色蛍光ガラス
JP2010251621A (ja) * 2009-04-17 2010-11-04 Mitsubishi Chemicals Corp 半導体発光装置
US20100258828A1 (en) * 2009-12-02 2010-10-14 Renaissance Lighting Inc. Solid state light emitter with near-uv pumped nanophosphors for producing high cri white light
JP2011181793A (ja) * 2010-03-03 2011-09-15 Koito Mfg Co Ltd 発光装置
JP2011243356A (ja) * 2010-05-17 2011-12-01 Koito Mfg Co Ltd 照明装置
JP2012018977A (ja) * 2010-07-06 2012-01-26 Toshiba Corp 発光デバイス

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019050391A (ja) * 2018-10-25 2019-03-28 日亜化学工業株式会社 発光装置
WO2025094772A1 (fr) * 2023-10-30 2025-05-08 パナソニックＩｐマネジメント株式会社 Dispositif électroluminescent

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