WO2014009141A1 - Method for producing a part of an optoelectronic component and method for producing an optoelectronic component - Google Patents

Abstract

The invention relates to a method for producing a part (208) of an optoelectronic component (209), wherein the method includes applying a fluorescent layer (202) to a substrate (201), wherein the fluorescent layer (202) comprises fluorescent particles (204), and wherein the fluorescent particles (204) are applied in such a way that cavities (203) are formed between the fluorescent particles (204); and further includes vapour deposition of a matrix substance (205) on the fluorescent layer (202), such that at least part of the matrix substance (205) at least partially fills the cavities (203).

Description

description

Method for producing a component of a

optoelectronic component and method for producing an optoelectronic component

The invention relates to a method for producing a component of an optoelectronic component and an Ver ^¬ drive for producing an optoelectronic component.

The German priority application DE 10 2012 212 086.6, which explicitly forms part of the disclosure of the present application also describes a method for Her ^¬ a component of an optoelectronic device and a method for producing an optoelectronic component.

To white or differently colored light (light emitting diode, LED) using a light emitting diode to generate, typically a semiconductor chip, the narrow-band blue light will emit ^¬ advantage be used.

Forming electromagnetic radiation of a second wavelength from electromagnetic radiation of a first wavelength is called wavelength conversion. Shares of the blue LED light are converted by means of a converter into green to red components of the light, so that, for example, white light is produced. The wavelength conversion can be realized for example by means of a phosphor which is formed in the optical path of the opto ^¬ lektronischen component, for example, is formed on or above the LED. In other words, the converter particles should be located above (in the light path) of the semiconductor chip in the LED for the wavelength conversion. A luminescent substance may be understood as meaning a substance which, with lossy ^effect, converts electromagnetic radiation of one wavelength into electromagnetic radiation of another (longer) wavelength, for example by means of phosphorescence or fluorescence. The energy difference from absorbed electromagnetic radiation and emitted electromagnetic radiation can be converted into phonons, ie heat, and / or by emission of electromagnetic radiation having a wavelength proportional to the energy difference.

Electrophoretic deposition of phosphors is one method of depositing phosphor (e.g., phosphor) layers for light conversion above a semiconductor chip. At this time, the substrate (e.g., an LED package) is located

(also referred to as LED package) or a panel (or plate) with semiconductor chips) in a suspension of a phosphor, e.g. Phosphorus in a solvent and is electrically contacted. Thus, the substrate is an electrode, elsewhere in the suspension, a counter electrode is attached. The phosphor

(For example, phosphorus) particles in the suspension carry charges on the surface. By applying an electric current, the phosphor particles move in the electric field in the direction of the substrate and deposit as a phosphor layer.

Thus, a phosphor (eg phosphorus) layer can be obtained on the LED chip without matrix material. As a rule, the phosphor ^{layer is} subsequently cast with a matrix material (eg silicone or epoxy resin).

In this case, the phosphor particles are separated by the poorly thermally conductive matrix material and heat that results from the conversion of light can be transported from the phosphor layer with little efficiency. In another conventional method of manufacturing a LED, the phosphor is applied for example by means of a matrix on the optoelectronic component, where ^¬ at the phosphor itself, is in suspension in the first liquid-sigen matrix, for example in silicone or epoxy resin, and during solidification of the Matrix remains in this.

This results in that the phosphor particles are separated by the Mat ^¬ rixmaterial.

Since silicone has only a low thermal conductivity and ei ^¬ NEN low refractive index, resulting from the light conversion heat can only be inefficient transported from the phosphor layer and removed. It should also be noted that phosphors typically have a relatively high refractive index (about 1.8), whereas silicone matrix materials have a relatively low refractive index (about 1.4-1.5). Due to the high refractive index difference, the material boundaries of the phosphor and the matrix material lead to a high degree of total reflection. This also leads to a loss of brightness in the LED.

Therefore, silicone matrix material having a high refractive index has heretofore been used. However, this is limited by the material properties to a value of at most approx. 1.54. In addition, the low thermal conductivity remains.

In various embodiments, a method of manufacturing a component of an optoelectronic device and a method for producing an optoelectronic component with a wavelength converter layer be ^¬ riding provided, wherein the converter layer matrix freely be applied ^¬ and then with an inorganic layer (or inorganic African matrix layer , or inorganic matrix) covered ^¬ who can. In various embodiments, a higher packing density of the converter layer can also be achieved. Due to the higher packing density of the converter layer possibly achieved by various embodiments, it is possible to achieve an increased thermal conductivity, for example in the converter layer.

Furthermore, in various embodiments, a higher luminous efficiency of the optoelectronic component can be achieved ^¬ the. Furthermore, in various embodiments, a higher mechanical stability of the converter layer can be achieved in comparison to a converter layer applied matrix-free and not provided with a subsequently applied matrix layer.

In the context of this description, an organic substance can be understood as meaning a compound of the carbon which is present in chemically uniform form, regardless of the particular state of matter, and which is characterized by characteristic physical and chemical properties. Furthermore, in the context of this description, an inorganic substance can be understood as a compound without carbon or a simple carbon compound, which is present in chemically uniform form, regardless of the particular state of matter, and is characterized by characteristic physical and chemical properties. In the context of this specification (hybrid fabric) can have one, regardless of their physical state, present, marked by characteristic physical and chemical properties associated with connecting parts included in che ^¬ mixed uniform shape the carbon and are free of carbon, understood as an organic-inorganic substance become. In the context of this description, the term "substance" encompasses all of the abovementioned substances, for example an organic substance, an inorganic substance, and / or a hybrid substance Furthermore, in the context of this description, a mixture of substances can be understood to mean components of two or more different substances whose constituents are, for example, wise very finely distributed. A substance class means a substance or mixture of one or more organic substances, one or more inorganic substances or one or more hybrid substances. The term "material" can be used synonymously with the term "substance".

In order to generate white or other colored light by means of a light emitting diode (LED), a semiconductor chip, which emits narrowband blue light, can be used.

Forming electromagnetic radiation of a second wavelength from electromagnetic radiation of a first wavelength is called wavelength conversion. Shares of the blue LED light are converted by means of a converter into green to red components of the light, so that, for example, white light is produced. The wavelength conversion can be realized for example by means of a phosphor which is formed in the optical path of the opto ^¬ lektronischen component, for example, is formed on or above the LED. In other words, the converter particles should be located above (in the light path) of the semiconductor chip in the LED for the wavelength conversion.

A luminescent substance may be understood as meaning a substance which, with lossy effect, converts electromagnetic radiation of one wavelength into electromagnetic radiation of another (longer) wavelength, for example by means of phosphorescence or fluorescence. The energy difference from absorbed electromagnetic radiation and emitted electromagnetic radiation can be converted into phonons, ie heat, and / or by emission of electromagnetic radiation having a wavelength proportional to the energy difference. In various embodiments, a method of manufacturing a component of an optoelectronic device having a wavelength converter layer is provided, the method comprising: applying a phosphor layer on a support, wherein the phosphor layer fluorescent ^¬ particle, wherein the phosphor particles are brought so on ^¬ that between the Leuchtstoffparticles cavities are formed; and vapor depositing a matrix substance on the phosphor layer such that at least a portion of the matrix material at least partially fills the cavities.

In one embodiment, the application of the phosphor layer on a support may be an electrophoretic, beispiels- as matrix-free deposition of the phosphor layer aufwei ^¬ sen. In other words, it is possible by the electrophoretic deposition of the phosphor to obtain a luminescent layer matrix-free. In yet another embodiment, the phosphor particles may have a particle size in a range of about 200 nm to about 50 pm.

In yet another embodiment, the voids may be sized in a range of about 50 nm to about 10 pm.

In yet another embodiment, the phosphor layer can form a closed layer (illustratively as a closed surface of the phosphor or as a closed phosphor layer on the carrier).

In yet another embodiment, the cavities may extend to the carrier, illustratively one or more cavities may expose a portion of a surface of the carrier or may also extend along the entire layer cross section of the carrier

Fluorescent layer extend. Subsequent to the application of the phosphor layer, the phosphor layer can be covered by a physical or chemical gas phase process with a closed layer of an inorganic material.

In yet another embodiment, the vapor deposition may include physical vapor deposition.

In yet another embodiment, the vapor deposition may include chemical vapor deposition (CVD).

In yet another embodiment, chemical vapor deposition may include Atomic Layer Deposition (ALD) or Molecular Layer Deposition (MLD).

In other words, the inorganic layer may be deposited by atomic layer deposition to achieve homogeneous coverage of the entire phosphor particle surface (eg, phosphor particle surface). A divorced Atomlagenab ^¬ enables a homogeneous precipitation between the phosphor particles. Thus, a closed ALD layer can be obtained on the phosphor particles.

In this way, for example, the wetting can (in other words, the physical contact) of the phosphor with Si ^¬ Likon prevented in a further processing step ^¬ the.

Also, the phosphor can be surrounded with a high-refractive matrix material, which can improve the light extraction. In yet another embodiment, the matrix substance may comprise an organic matrix substance and / or an inorganic matrix substance. In yet another embodiment, a layer thickness of the matrix material may range from about 100 nm to about 700 nm, for example, from about 200 nm to about 500 nm, for example, from about 300 nm to about 400 nm the coupling of the light can be improved.

In other words, for decoupling, the layer thickness should be at least 100 nm to 700 nm.

In yet another embodiment, a layer thickness of the matrix fabric between the phosphor particles may be in a range of about 5 nm to about 1 pm, for example in a range of about 10 nm to about 100 nm, for example in a range of about 20 nm to about 50 nm. This can improve the mechanical properties.

In other words, for the improvement of the mechanical properties, a film thickness in a range of about 10 nm to about 100 nm may be provided between the phosphor particles in conventional ALD materials.

In yet an embodiment of the matrix material (material connection) can be filled into the cavities in such a way that the phosphor particles by means of the matrix material at least partially crosslinked with each other are differently expressed ^¬, are brought into physical contact. In yet another embodiment, the matrix material can be filled into the cavities in such a way that it connects a surface of the carrier to the phosphor layer in a substance-tight manner.

In yet one embodiment, the matrix material can be so applied to the phosphor layer, that the light ^¬ material particles of the phosphor layer so cross-linked and / or bonded to the matrix layer and / or are connected to the carrier, that due to the high thermal conductivity of the Matrixstof- The heat generated by the light conversion in the phosphor layer can be well distributed or dissipated.

In addition, the mechanical stability of the phosphor ^layer can be improved by the crosslinking or compound.

In other words, the phosphor

(or phosphorus) layer received an improved mechanical stability, which can facilitate the further processing of the LED component.

Further, the matrix material in accordance with various embodiments may include a wavelength region high light transmission in the optically visible WEL, for example in Wellenlängenbe ^¬ ranging from about 380 nm to about 780 nm.

The matrix material in the visible wavelength range may be at least partially optically transparent. In various embodiments, a metal oxide, e.g. Al2O3, T1O2, ZrC> 2, HfC> 2, Y3AI6O12 and MgO.

In addition, the matrix material according to various embodiments may have a high refractive index, for example, a refractive index of more than 1.0, ^¬ example, from more than 1.4, for example, a refractive index in a range of about 1.5 to about 2, 6, for example a refractive index in a range of unge ^¬ approximately 1.5 to about 1.9.

In other words, the matrix material should have a higher refractive index than silicone. Thus, the refractive index of the matrix material ^¬ between the refractive index of Si ^¬ Likon and the refractive index of the converter, so beispiels- example in a range from about 1.5 to about 1.9.

Due to the higher refractive index of the matrix material, the light extraction can be improved. In yet an embodiment, the phosphor layer or the phosphor particles may be covered or enveloped by the matrix material or which has a refractive index which is such that impart approximately between the refractive index of the phosphor and is of silicone, a verbes ^¬ sere light outcoupling can be reduced by reducing total reflections.

It is possible to deposit the matrix material as at least partially crystalline or polycrystalline layer. An at least partially crystalline or polycrystalline layer may have the advantages of higher chemical resistance and / or higher purity than an amorphous layer. An at least partially crystalline or polycrystalline deposition of a layer can make incorporation of impurities in the layer more difficult than deposition of an amorphous layer.

For an at least partially crystalline or polycrystalline deposition, for example, the matrix materials AI2O3, T1O2, ZrC> 2, HfC> 2 and MgO are suitable. When using AI2O3 deposition can be done above 700 ° C, for example at high Abscheidetempe ^¬ temperature. An at least partially crystalline or polycrystalline From ^¬ decision can, for example, by the process of che ^¬ mix gas-phase deposition (CVD) carried out. If one of the possible matrix materials T1O2, r02, HfC> 2 and MgO verwen ^¬ det, then an at least partially crystalline or polycrystalline deposition can also be carried out by the method of atomic deposition (ALD).

In various embodiments, a method of manufacturing a component of an optoelectronic device having a wavelength converter layer is provided, the method comprising: forming a component of the optoe ^¬ lektronischen device according to one of the preceding comparison drive, wherein the carrier has a light-emitting component, wherein the component in the light path of the lichtemittie ^¬ generating device is arranged. In one embodiment, a plurality of carriers can be subjected to one of the aforementioned methods in common method steps.

Embodiments of the invention are illustrated in the figures and are explained in more detail below.

Show it

1 shows a flowchart in which a method for producing a component of an optoelectronic

Component is shown according to various Ausführungsbei ^¬ games;

Figures 2a and 2b are schematic cross-sectional views of a

Component at different times during the manufacture of a component of an opto-electronic ^¬ African component according to various embodiments; Figures 3a to 3c in a schematic plan view (FIG

 3a) and in two schematic cross-sectional views (FIG. 3b and FIG. 3c) a panel with chips as carrier in the method for producing a component of an optoelectronic component, which are covered with a phosphor layer and are covered with a matrix material according to various embodiments;

FIGS. 4a and 4b show schematic cross-sectional views of components in the method for producing a component of an optoelectronic component according to various exemplary embodiments with reference to FIG different particle and cavity sizes, or layer thicknesses; and

Figure 5 is a schematic cross-sectional view of a device which comprises a light-emitting component on ^¬, in the method for producing an optoelectronic component according to various embodiments. In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional terminology, such as "top", "bottom", "front", "rear", "front", "rear ^¬ res", etc. are used with respect to the orientation of the Figure (s). Because components of embodiments can be positioned in a number of different orientations, the directional terminology is illustrative and is in no way limiting. It should be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. It is understood that the features of the various exemplary embodiments described herein may be combined with each other unless specifically stated otherwise. The following detailed description is therefore not to be considered in a limiting sense, and the scope of the present invention is defined by the appended claims.

In this specification, the terms "connected,""connected" and "coupled" used for loading write ^¬ both a direct and an indirect connection, a direct or indirect connection and a direct or indirect coupling. In the figures, identical or similar elements with identical reference sign ^¬ be provided whenever appropriate. FIG. 1 shows a flowchart of a method 100 for producing a component of an optoelectronic component according to various exemplary embodiments.

In 102, a phosphor layer may be on a support ^¬ be introduced, wherein the fluorescent layer phosphor Parti ^¬ kel, wherein the phosphor particles are placed in such a ^¬ introduced that spaces between the phosphor particles are formed hollow.

According to various embodiments, the phosphor layer can be applied by means ^¬ elektrophoret regard deposition.

According to various embodiments, the phosphor layer may be applied by other methods, which are suitable, on the carrier a matrix-free light ^¬ material layer so as to form that particles cavities are formed between the phosphor.

According to various embodiments, the phosphor layer may include, for example, Ce3 + doped garnets such as YAG: Ce and LuAG, for example (Y, Lu) 3 (Al, Ga) 5012: Ce3 +; Eu2 + doped nitrides, for example CaAlSiN3: Eu2 +,

 (Ba, Sr) 2Si5N8: Eu2 +; Eu2 + doped sulfides, SIONe, SiAlON, orthosilicates, for example (Ba, Sr) 2Si04: Eu2 +; Chlorosilicates, chlorophosphates, BAM (barium magnesium aluminate: Eu) and / or SCAP, halophosphate or be formed therefrom.

According to various embodiments, the phosphor particles may have a particle size in a range of about 200 nm to about 50 pm, for example in a range of about 500 nm to about 30 pm, for example in a range of about 5 pm to about 25 pm. According to various embodiments, the voids may have a size in a range of about 50 nm to about 10 pm, for example in a range of about 200 nm to about 5 pm, for example in a range of about 500 nm to about 2 pm.

According to various embodiments, the phosphor layer may form a closed layer. The cavities may extend to the carrier. The carrier may have at least one chip.

The carrier may include one or more wire-bonded (or

wire-connected) chips on an LED panel.

Furthermore, the carrier may comprise a chip wafer.

Furthermore, the carrier can comprise individual chip wafers, which are arranged on a foil or are sorted, for example, according to a predetermined sorting criterion.

In 104, a matrix material can be deposited on the phosphor layer by means of gas phase deposition, so that at least part of the matrix substance at least partially fills the cavities.

According to various embodiments, the vapor deposition may be accomplished by a physical vapor deposition process.

The physical vapor deposition process may, for example ^¬ one of the following processes include: thermal evaporation, electron beam evaporation, laser beam evaporation, arc evaporation, molecular beam epitaxy, sputtering ("sputtering" from the English, in German "sputtering"), Ionenstrahlgestüt zte deposition, Ionenplattie - ren. According to various embodiments, the gas phase deposition can be carried out by means of a chemical vapor deposition process. The chemical vapor deposition can be carried out by atomic layer deposition (ALD) or by means of molecular layer deposition (MLD). According to other exemplary embodiments, the chemical vapor deposition can take place, for example, according to one of the following processes: plasma-assisted chemical vapor deposition (PECVD), HFCVD process (derived from the English term "not filament CVD", in German "hot-wire-activated vapor deposition"), low pressure CVD (LPCVD), APCVD (derived from the English Begrff "atmospheric pressure chemical vapor deposition", in German "chemical Gasphasenabschei ^¬ dung at atmospheric pressure"), metal organic chemical vapor ^¬ phase deposition (MOCVD), chemical vapor infiltration (CVID).

The matrix material may comprise a metal oxide, for example Al 2 O 3, TiO 2, ZrO 2, HfO 2, Z 3 Al 6 O 12 or MgO. Alternatively, the matrix fabric may have another inorganic substance which has a high thermal conductivity ^¬, for example, a thermal conductivity greater than 5 W / (mK), for example of more than 10 W / (mK). The matrix material may comprise an organic substance.

The matrix material can form a closed layer. As a result, wetting of the phosphor with silicone can be avoided in a further processing step.

A layer thickness of the matrix material 205 may be in a range from approximately 100 nm to approximately 700 nm, for example in a range from approximately 200 nm to approximately 500 nm, for example, in a range of about 300 nm to about 400 nm. Thereby, the outcoupling of the light can be improved. In other words, for decoupling, the layer thickness should be at least 100 nm to 700 nm.

In yet another embodiment, a layer thickness of the matrix fabric 205 between the phosphor particles may be in a range of about 5 nm to about 1 pm, for example in a range of about 10 nm to about 100 nm, for example in a range of about 20 nm about 50 nm. This can improve the mechanical properties.

In other words, for the improvement of the mechanical properties, a film thickness in a range of about 10 nm to about 100 nm may be provided between the phosphor particles in conventional ALD materials.

According to various embodiments, the matrix material can be filled into the cavities such that the

Phosphor particles are at least partially crosslinked with one another by means of the matrix ^substance .

According to various embodiments, the matrix material can be filled into the cavities in such a way that it connects the surface of the carrier to the phosphor layer in a substance- ^tight manner.

According to various embodiments, the matrix material can thus be so applied to the phosphor layer, the phosphor particles of the phosphor layer so cross-linked and / or bonded to the matrix layer and / or are connected to the carrier, that due to the high thermal conductivity ^¬ ability of the matrix material by the light conversion Heat generated in the phosphor layer can be well distributed or dissipated. In addition, the mechanical stability of the phosphor layer can be ver ^¬ improved by this same cross-linking or connection.

Further, the matrix material according to various execution can ^¬ examples, a high light transmittance in the optically sichtba ^¬ ren wavelength range having, for example, in the wavelength range from about 380 nm to about 780 nm.

In addition, the matrix material according to various embodiments may have a high refractive index, for example, a refractive index of more than 1.0, ^¬ example, from more than 1.4, for example, a refractive index in a range of about 1.5 to about 2.6, For example, a refractive index in a range of unge ^¬ approximately 1.5 to about 1.9.

According to various embodiments, therefore, the phosphor layer or the phosphor particles are covered or enveloped by the matrix material having a refractive ^¬ index are which is approximately effected between the refractive index of the phosphor and is of silicone, so that a ver ^¬ improved light outcoupling can be reduced by reducing total reflections.

It is possible to deposit the matrix material as at least partly kri ^¬ stalline or polycrystalline layer. A too ^¬ least partially crystalline or polycrystalline layer may be compared with an amorphous layer having the advantages of a higher chemical resistance and / or higher purity. An at least partially crystalline or po ^¬ lykristalline deposition of a layer may make it difficult to incorporation of impurities into the layer to a deposition of an amorphous layer.

For an at least partially crystalline or polycrystalline deposition of the matrix material, for example, the Matrix materials AI2O3, T1O2, ZrO2, HfO2 and MgO. In Ver ^¬ application of AI2O3 _d i _{e can be} carried out deposition temperature of about 700 ° C deposition, for example, at ho ^¬ forth. An at least partially crystalline or polycrystalline From ^¬ decision can, for example, by the process of che ^¬ mix gas-phase deposition (CVD) carried out. If one of the possible matrix materials T1O2, r02, HfC> 2 and MgO verwen ^¬ det, then an at least partially crystalline or polycrystalline deposition can also be carried out by the method of atomic deposition (ALD).

2 a and 2 b show schematic cross-sectional views of a component 209 at different points in time during the production of a component 208 of an optoelectronic component 209 according to various exemplary embodiments.

2a shows in a view 200 that a phosphor layer ^¬ 202 can be applied to a carrier 201, wherein the phosphor layer 202 comprises phosphor particles 204 ^¬, wherein the phosphor particles 204 are applied such that between the phosphor particles 204 voids 203 be formed. According to various embodiments, the phosphor layer 202 can be brought by means of electrophoretic deposition on ^¬.

According to other embodiments, the phosphor layer 202 can be applied by means of other methods which are suitable for forming a matrix-free phosphor layer 202 on the carrier 201 in such a way that cavities 203 are formed between the phosphor particles 204. According to various embodiments, the phosphor layer 202 may include, for example, Ce3 + doped garnets such as YAG: Ce and LuAG, for example (Y, Lu) 3 (Al, Ga) 5012: Ce3 +; Eu2 + doped nitrides, for example CaAlSiN3: Eu2 +,

(Ba, Sr) 2Si5N8: Eu2 +; Eu2 + doped sulfides, SIONe, SiAlON, orthosilicates, for example (Ba, Sr) 2Si04: Eu2 +; Chlorosilicates, chlorophosphates, BAM (barium magnesium aluminate: Eu) and / or SCAP, halophosphate or be formed therefrom.

For example, according to various embodiments, the phosphor particles 204 may have a particle size in a range of about 200 nm to about 50 pm, for example in a range of about 500 nm to about 30 pm, for example in a range of about 5 pm to about 25 pm. For example, in various embodiments, the cavities 203 may have a size in a range of about 50 nm to about 10 pm, for example in a range of about 200 nm to about 5 pm, for example in a range of about 500 nm to about 2 pm.

According to various embodiments, the phosphor layer 202 may form a closed layer.

According to other embodiments, the cavities 203 may extend to the carrier 201.

According to various embodiments, the carrier 201 may comprise at least one chip. In other embodiments, the carrier may comprise 201 wire-bonded chips that a LED panel is be ^¬ tee t.

According to other embodiments, the carrier 201 may comprise a chip wafer.

Furthermore, the carrier 201 can have individual chip wafers, which are or are arranged on a foil. For example, sorted according to a predetermined sort criterion.

FIG. 2b shows in a view 210 that a matrix substance 205 can be deposited on the phosphor layer 202, so that at least part of the matrix substance 205 at least partially fills the cavities 203.

According to various embodiments, the vapor deposition may be accomplished by a physical vapor deposition process.

The physical vapor deposition process may, for example ^¬ one of the following processes include: thermal evaporation, electron beam evaporation, laser beam evaporation, arc evaporation, molecular beam epitaxy, sputtering ("sputtering" from the English, in German "sputtering"), Ionenstrahlgestüt zte deposition, Ionenplattie - ren.

According to various other embodiments, the vapor deposition may be accomplished by a chemical vapor deposition process. The chemical vapor deposition may, for example, by means of atomic layer depositing ^¬ (Atomic Layer Deposition (ALD)) or by Moleküllagenabscheiden (Molecular Layer Deposition (MLD)) take place. According to other exemplary embodiments, the chemical vapor deposition can take place, for example, according to one of the following processes: plasma-assisted chemical vapor deposition (PECVD), HFCVD process (derived from the English term "not filament CVD", in German "hot-wire-activated vapor deposition"), low pressure CVD (LPCVD), APCVD (derived from the English Begrff "atmospheric pressure chemical vapor deposition", in German "chemical Gasphasenabschei ^¬ dung at atmospheric pressure"), metal organic chemical gas phase separation (MOCVD), chemical vapor infiltration (CVID).

According to various embodiments, the matrix material 205 may comprise a metal oxide, for example Al 2 O 3, TiO 2, ZrO 2, HfC> 2, Z 3 Al 6 O 12 or MgO.

Alternatively, the matrix material 205 may comprise another inorganic substance which has a high thermal conductivity, for example a thermal conductivity of more than 5 W / (m-K), for example more than 10 W / (m-K).

According to other embodiments, the matrix material 205 may comprise an organic substance.

According to various embodiments, the matrix fabric 205 may form a closed layer. As a result, wetting of the phosphor 202 with silicone can be avoided in a further processing step.

A layer thickness of the matrix substance 205 may be in a range from approximately 100 nm to approximately 700 nm, for example in a range from approximately 200 nm to approximately 500 nm, for example in a range from approximately 300 nm to approximately 400 nm.

According to various embodiments, a layer thickness of the matrix fabric 205 between the phosphor particles may be in a range of about 5 nm to about 1 pm, for example in a range of about 10 nm to about 100 nm, for example in a range of about 20 nm to about 50 nm ,

According to various embodiments, the matrix material may be filled in such a way 205 in the cavities 203, the phosphor particles are to ^¬ least partially cross-linked with each other by means of the matrix material 205 204th According to various embodiments, the matrix material may be filled in such a manner in the cavities 203,205, that it connects the surface of the carrier 201 cohesively to the light emitting material layer ^¬ 202nd

According to various embodiments, the matrix material 205 can be accommodated in such a way on the phosphor layer 202 on ^¬ thus that the phosphor particles 204 of the phosphor ^¬ material layer 202 as cross-linked and / or bonded to the matrix layer 205 and / or are connected to the carrier 201, that by high thermal conductivity of the matrix material 205, the heat generated by the light conversion in the phosphor layer 202 can be well distributed or dissipated. Moreover, by virtue of this crosslinking or compound, the mechanical stability of the phosphor layer 202 can be improved.

Further, the matrix material 205, according to various exemplary embodiments, a high light transmittance have in the optically visible wavelength range, for example, in the wavelength range from about 380 nm to about 780 nm. In addition, the matrix material according to various From ^¬ exemplary embodiments can have a high refractive index, for example a refractive index of more than 1.0, ^¬ example, from more than 1.4, for example, a refractive index in a range of about 1.5 to about 2.6, for example, a refractive index in a range of 1.5 to unge ^¬ ferry about 1.9.

According to various embodiments, the phosphor layer 202, or the phosphor particles can thus be covered 204 from the matrix material 205 and wrapped, which has a refractive index which is approximately between the Bre ^¬ deviation index of the phosphor and the silicone, so that an improved light extraction can be effected by reducing total reflections.

It is possible to deposit the matrix material 205 as an at least partially crystalline or polycrystalline layer. An at least partially crystalline or polycrystalline layer may have the advantages of higher chemical resistance and / or higher purity than an amorphous layer. An at least partially crystalline or polycrystalline deposition of a layer can make incorporation of impurities into the layer more difficult than deposition of an amorphous layer.

For an at least partially crystalline or polycrystalline deposition of the matrix material 205, for example, the matrix materials Al 2 O 3, T 1 O 2, ZrC> 2, HfC> 2 and MgO are suitable. When using AI2O3 _d i _e deposition _{may be} performed, for example, at high deposition temperature of about 700 ° C. An at least partially crystalline or polycrystalline From ^¬ decision can, for example, by the process of che ^¬ mix gas-phase deposition (CVD) carried out. If one of the possible matrix materials T1O2, rC1, HfC> 2 and MgO verwen ^¬ det, then an at least partially crystalline or polycrystalline deposition can also be carried out by the method of atomic deposition (ALD).

3 a to 3 c show in a plan view (FIG. 3 a) and in two cross-sectional views (FIGS. 3 b and 3 c) a panel 207 with chips 201 as carrier 201 in the method for producing a component 208 of a component 209, FIG the chips 201 are covered with a phosphor layer 202 and covered with a matrix material 205 according to various embodiments.

According to various embodiments, a plurality of carriers 201, for example chips 201, may be used in common process steps. Steps to be subjected to the explained in connection with the Fig.l and Fig.2 methods.

According to various embodiments, a luminescent layer 202 can be applied only to the chips 201 (in the illustrations 300, 310 and 320 in FIG. 3, the chips 201 are not visible under the already applied luminescent layer 202), whereas on a base element 207, for example a LED panel 207, no phosphor applied.

According to other embodiments (not shown), a phosphor layer 202 may also be applied to the base element 207 at least partially or completely.

Gas-phase deposition of the matrix material 205 can be performed in step 104 on the phosphor layer, wherein, in an on ^¬ order according to the embodiment shown in Figure 3a to 3 c Bauele ^¬ elements also disposed between and around the chips 201 surface of the base member 207 of the matrix material 205 may be covered ^¬ , as shown in view 220 in Figure 3c.

According to various embodiments, an LED panel 207 may be populated with wire-bonded chips 201. Subsequently, the phosphorus (or the phosphor particles 204) can be deposited electrophoretically. Subsequently, the panel 207 may be covered with a vapor deposition of an inorganic layer material 205. The layer 205 may be in a range from approximately 100 nm to approximately 5 pm. Thereon (not constitute provided ^¬) are gemoldet and obtain the finished LED device after dicing a silicone lens.

The phosphor layer 202 may also be deposited on a chip wafer 201 and then the inorganic layer 205. It is also possible to singulate a chip wafer and sort it on a foil. Subsequently, the phosphor 204 can be electrophoretically deposited on the chips 201 and coated with the inorganic matrix 205.

4a and 4b show schematic cross-sectional views of components in the method for producing a component 208 of a component 209 according to various embodiments ^¬ examples with different LeuchtStoffpartikel- and cavity sizes, or layer thicknesses.

In the above in connection with Fig.l and Fig.2 process, the phosphor particles may according to various 204 ^¬ which embodiments be of different sizes, for example a particle size in a range of unge ^¬ ferry 200 nm to about 50 pm, for example, a Be ^¬ range from about 500 nm to about 30 pm, for example in a range of about 5 pm to about 25 pm. In addition, according to various Ausführungsbeispie ^¬ len having cavities 203 different sizes, wherein ^¬ play, a size in a range from about 50 nm to about 10 pm, for example in a range from about 200 nm to about 5 pm, for example in a loading range from about 500 nm to about 2 pm.

A layer thickness of the matrix material 205 can be in a range of about 100 nm to about 700 nm, for example in a range from about 200 nm to about 500 nm, for example in a range from about 300 nm to unge ^¬ ferry 400 nm.

According to various embodiments, a layer thickness of the matrix fabric 205 between the phosphor particles may be in a range of about 5 nm to about 1 pm, for example in a range of about 10 nm to about 100 nm, for example in a range of about 20 nm to about 50 nm , Consequently, according to various embodiments, a layer structure of components 208 produced by the method may be different, for example, depending on how the phosphor particle size, cavity size and layer thickness of the matrix layer 205 are combined with one another.

In the view 400 in 4a and 4b in the view 410 in exemplary combinations of LeuchtStoffpartikelgrö- SSE, cavity size and layer thickness 205 is provided ^¬ the matrix layer. It should be understood that these are merely illustrative and other combinations of the mentioned parameters are also possible. 4a, the view 400 shows a component in which the phosphor particles 204 of the phosphor layer 202 and the size of the cavities 203 are large in comparison to the thickness of the matrix layer 205. This means that the matrix layer 205 envelops the phosphor particles 204 and the phosphor particles Particles 204 with each other and with the carrier 201 crosslinked, or connects, but only a portion of the cavities 203 fully ^¬ constantly or partially fills. In other words, lie in this embodiment, before the cavities that are not completeness, ^¬ dig filled with matrix material 205th

According to various embodiments, the matrix material 205 can thus be filled into the cavities 203 in such a way that the phosphor particles 204 are at least partially crosslinked to one another by means of the matrix substance 205.

In FIG. 4 b, the view 410 shows a component in which the phosphor particles 204 of the phosphor layer 202 and the size of the cavities 203 are comparable to the thickness of the matrix layer 205. This means that the matrix layer 205 coats the phosphor particles 204 and the fluorescent Parti ^¬ kel 204 networked together and to the support 201, or connects 203 and thereby completely fills the cavities. Expressed in terms ^{¬ s} are in this embodiment in the Substantially only against cavities, which are completely filled with matrix material ^¬ 205th

Consequently, according to various embodiments, the matrix material 205 can be filled into the cavities 203 in such a way that it connects the surface of the carrier 201 to the phosphor layer 202 in a substance-tight manner.

According to various embodiments of the matrix may be material 205. Accordingly, in such a way are applied to the phosphor ^¬ layer 202, the phosphor particles 204 of the phosphor layer 202 as cross-linked and / or bonded to the matrix layer 205 and / or are connected to the carrier 201, that can rixstoffes by the high thermal conductivity of the resulting Mat- 205 through the light conversion in the luminescent material layer 202 ^¬ heat well distributed, or abge ^¬ leads are.

In addition, by virtue of this crosslinking or bonding, the mechanical stability of the phosphor layer 202 can be improved.

Fig. 5 shows a schematic cross-sectional ^{view of} a component which has a light-emitting component 501 in the method for producing an optoelectronic component 209 according to various exemplary embodiments.

In a method for producing an optoelectronic component, the method steps explained in connection with one of the aforementioned figures for producing a component 208 of an optoelectronic component 209 may be carried out, wherein the carrier 201 may comprise a light emitting component 501, for example an LED 501 For example, the component of the optoelectronic component 209 can be arranged in an optical path of the light-emitting component 501.

Claims

A method of manufacturing a component (208) of an optoelectronic device (209), the method comprising:  Depositing a phosphor layer (202) on a support (201), wherein the phosphor layer (202) comprises phosphor particles (204), wherein the  Phosphor particles (204) are applied such that voids (203) are formed between the phosphor particles (204); and • gas-phase deposition of a matrix material (205) on the phosphor layer (202), so that at least a portion of the matrix material (205) to ^¬ fills the cavities (203) at least partly. Method according to claim 1, wherein the gas phase deposition comprises a physical gas ^¬ phase deposition. Method according to claim 1, wherein the vapor deposition comprises chemical vapor deposition. Method according to claim 3, wherein the chemical vapor deposition comprises atomic layer deposition or molecular layer deposition. Method according to one of claims 3 and 4, wherein the matrix material (205) is deposited at least partially crystalline lin or polycrystalline. Method according to one of claims 1 to 5, wherein the phosphor particles (204) have a particle size in a range of about 200 nm to about 50 pm. Method according to one of claims 1 to 6, wherein the cavities (203) have a size in a range of about 50 nm to about 10 pm. 8. The method according to any one of claims 1 to 7,  wherein the matrix material (205) comprises an organic matrix material and / or an inorganic matrix material. 9. The method according to any one of claims 1 to 8, wherein the matrix material (205) is such ge into the cavities fills ^¬ that the phosphor particles (204) by means of the matrix material (205) are at least partially interconnected. 10. The method according to any one of claims 1 to 9,  wherein the matrix material (205) is filled into the cavities (203) in such a way that it connects a surface of the carrier (201) in a materially bonded manner to the phosphor layer (202). 11. A method of making an optoelectronic device, the method comprising: Forming a component of the optoelectronic component according to a method according to one of claims 1 to 10 on a carrier (201), wherein the carrier has a light-emitting component (501) on ^¬ ;  • wherein the component (208) is in an optical path of the  light emitting device (501) is arranged.