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WO2014097360A1 - Composition de résine pour plaque d'encapsulation de dispositif à circuit intégré à semi-conducteur et plaque d'encapsulation de dispositifà circuit intégré à semi-conducteur - Google Patents

Composition de résine pour plaque d'encapsulation de dispositif à circuit intégré à semi-conducteur et plaque d'encapsulation de dispositifà circuit intégré à semi-conducteur Download PDF

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Publication number
WO2014097360A1
WO2014097360A1 PCT/JP2012/008165 JP2012008165W WO2014097360A1 WO 2014097360 A1 WO2014097360 A1 WO 2014097360A1 JP 2012008165 W JP2012008165 W JP 2012008165W WO 2014097360 A1 WO2014097360 A1 WO 2014097360A1
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Prior art keywords
component
weight
parts
integrated circuit
resin composition
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PCT/JP2012/008165
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English (en)
Japanese (ja)
Inventor
敬文 太田
拓也 首藤
正博 雛田
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Tokyo Printing Ink Mfg Co Ltd
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Tokyo Printing Ink Mfg Co Ltd
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Priority to PCT/JP2012/008165 priority Critical patent/WO2014097360A1/fr
Publication of WO2014097360A1 publication Critical patent/WO2014097360A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L71/00—Compositions of polyethers obtained by reactions forming an ether link in the main chain; Compositions of derivatives of such polymers
    • C08L71/08—Polyethers derived from hydroxy compounds or from their metallic derivatives
    • C08L71/10—Polyethers derived from hydroxy compounds or from their metallic derivatives from phenols
    • C08L71/12—Polyphenylene oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G69/00—Macromolecular compounds obtained by reactions forming a carboxylic amide link in the main chain of the macromolecule
    • C08G69/40—Polyamides containing oxygen in the form of ether groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G69/00—Macromolecular compounds obtained by reactions forming a carboxylic amide link in the main chain of the macromolecule
    • C08G69/44—Polyester-amides
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L53/00—Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers
    • C08L53/005—Modified block copolymers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L77/00—Compositions of polyamides obtained by reactions forming a carboxylic amide link in the main chain; Compositions of derivatives of such polymers
    • C08L77/12—Polyester-amides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to a resin composition for a semiconductor integrated circuit device packaging tray and a semiconductor integrated circuit device packaging tray.
  • a semiconductor integrated circuit device packaging tray for storing and transferring a semiconductor integrated circuit is used.
  • a resin composition used for such a tray a resin composition containing a polyphenylene ether resin is known (see, for example, Patent Document 1).
  • the inventors added a predetermined amount of talc to a specific type of resin component and used a predetermined amount of an antistatic agent having a specific structure, thereby improving heat resistance, impact resistance, and electrostatic discharge prevention performance. It has been found that a tray with excellent balance can be obtained.
  • the deflection temperature under load (load 1.8 MPa) measured according to ISO75 is 160 ° C. or higher.
  • the Charpy impact strength value measured according to ISO179 is 5 kJ / m 2 or higher. Resistance value is less than 10 10 ⁇ / ⁇
  • a semiconductor integrated circuit device packaging tray using the above-described resin composition for a semiconductor integrated circuit device packaging tray can also be provided.
  • a resin composition for a semiconductor integrated circuit device packaging tray and a semiconductor integrated circuit device packaging tray capable of producing a tray excellent in balance of heat resistance, impact resistance and electrostatic discharge prevention performance.
  • the resin composition for a semiconductor integrated circuit device packaging tray of the present embodiment (hereinafter sometimes referred to as a resin composition)
  • E A polyether block polymer, which contains at least one of a block polymer of polyether and polyolefin, and a polyether ester amide.
  • the resin (E) content in this resin composition is 7 to 15 parts by weight with respect to 100 parts by weight as a total of component (A), component (B), component (C) and component (D). It is a composition. Furthermore, the molded product obtained from the resin composition satisfies the following requirements.
  • (A) Deflection temperature (load 1.8 MPa) measured according to ISO75 is 160 ° C. or higher
  • Charpy impact strength value measured according to ISO179 is 5 kJ / m 2 or more
  • Surface specific Resistance value is less than 10 10 ⁇ / ⁇
  • the polyphenylene ether resin has a structural unit represented by the following general formula (1).
  • R 1 , R 2 , R 3 and R 4 are each independently a hydrogen atom, a halogen atom, a primary or secondary alkyl group, a phenyl group, a hydrocarbon oxy group, or a haloalkyl group. And any one of cyano groups, n is an integer indicating the degree of polymerization (excluding 0).)
  • R 1 and R 2 are alkyl groups or phenyl groups, particularly alkyl groups having 1 to 4 carbon atoms
  • R 3 and R 4 are hydrogen atoms. Or a copolymer is preferable.
  • polyphenylene ether resin examples include poly (2,6-dimethyl-1,4-phenylene ether), poly (2,6-diethyl-1,4-phenylene ether), and poly (2,6-dipropyl-1). , 4-phenylene ether), poly (2-ethyl-6-methyl-1,4-phenylene ether), poly (2-methyl-6-propyl-1,4-phenylene ether), poly-2-methyl-6 -Isopropyl-1,4-phenylene ether, poly-2,6-dimethoxy-1,4-phenylene ether, poly-2,6-dichloromethyl-1,4-phenylene ether, poly-2,6-diphenyl -1,4-phenylene ether, poly-2,6-dinitrile-1,4-phenylene ether, poly-2,6-dichloro-1,4-phenylene ether, poly-2,5-dimethyl-1 , 4-Henille Any one or more of ether, and the
  • poly (2,6-dimethyl-1,4-phenylene ether) is particularly preferable from the viewpoint of heat resistance.
  • the polyphenylene ether resin may be alloyed with other resins such as polystyrene.
  • the polyphenylene ether resin preferably has an intrinsic viscosity at 25 ° C. measured in chloroform of 0.36 to 0.46 dl / g as a weighted average.
  • a plurality of polyphenylene ether resins having different intrinsic viscosities may be used in combination. When a plurality of different intrinsic viscosities are used in combination, the value of the intrinsic viscosity of each polyphenylene ether resin is preferably 0.35 to 0.46 dl / g.
  • the content of the polyphenylene ether resin in the resin composition for a semiconductor integrated circuit device packaging tray is preferably 40 parts by weight or more when the total of the resin components (components (A) to (C)) is 100 parts by weight. Moreover, it is preferable that it is 95 weight part or less. Heat resistance can be improved by setting it as 40 weight part or more.
  • the content of the polyphenylene ether resin is preferably 70 parts by weight or more when the total resin component is 100 parts by weight.
  • the fluidity at the time of heat melting of the resin composition can be ensured by setting it to 95 parts by weight or less, and particularly 90 parts by weight or less.
  • polystyrene resin In this embodiment, polystyrene is an optional component.
  • the polystyrene resin is a vinyl aromatic polymer represented by the following general formula (2), a copolymer with another vinyl monomer that can be copolymerized, or a copolymer with a rubber polymer. .
  • the component (B) since the component (B) is not a styrene elastomer, the component (B) does not include the styrene elastomer of the component (C).
  • the polystyrene resin contains 50% by weight or more of the aromatic vinyl monomer unit represented by the general formula (2).
  • R represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms
  • Z represents hydrogen, an alkyl group having 1 to 4 carbon atoms or halogen
  • x represents 0 to 5 Indicates an integer
  • Specific examples of the aromatic vinyl monomer include styrene, ⁇ -methylstyrene, 2,4-dimethylstyrene, monochlorostyrene, o-methylstyrene, p-methylstyrene, m-methylstyrene, p-tert-butyl.
  • Examples thereof include styrene and ethylstyrene, and examples of the polystyrene resin include homopolymerization or copolymerization of these monomers.
  • Other compounds copolymerizable with aromatic vinyl monomers include methacrylic acid esters such as methyl methacrylate and ethyl methacrylate, unsaturated nitrile compounds such as acrylonitrile and methacrylonitrile, and acids such as maleic anhydride. Any of an anhydride etc. is mentioned.
  • a copolymer with methacrylic acid esters or acid anhydrides as the polystyrene resin, and in particular, glycidyl (meth) alkylate and a styrene monomer. It is preferable not to contain a copolymer.
  • the copolymer of the vinyl aromatic polymer and the rubbery polymer described above include, for example, rubber-modified polystyrene (high impact polystyrene: HIPS), which is a styrene-butadiene copolymer, from the viewpoint of impact resistance. Any of rubber-modified styrene-acrylonitrile copolymer (ABS resin) is preferable. However, they do not exhibit the properties as an elastomer, ie, rubber elasticity.
  • the content of the polystyrene resin in the resin composition for a semiconductor integrated circuit device packaging tray is 0 to 20 parts by weight with respect to 100 parts by weight of the component (A). Especially, it is preferable that it is 10 weight part or more with respect to 100 weight part of component (A), Furthermore, it is 15 weight part or more. Moreover, the resistance value at the time of manufacturing a semiconductor integrated circuit device packaging tray can be made low by setting it as 20 weight part or less. On the other hand, impact resistance can be ensured by setting it as 10 weight part or more.
  • Styrenic elastomers exhibit rubber elasticity at room temperature.
  • Styrene elastomers include styrene / butadiene / styrene block copolymer (SBS), styrene / isoprene / styrene block copolymer (SIS), styrene / ethylene / butylene / styrene block copolymer (SEBS), and styrene / ethylene / propylene block copolymer (SEP). 1) or more thermoplastic elastomers.
  • SEBS is preferable because of its excellent heat resistance.
  • a styrene elastomer modified with an acid anhydride such as maleic anhydride is preferable, and among them, an acid-modified styrene / butylene / modified with an acid anhydride such as maleic anhydride.
  • Styrene block copolymer SEBS is preferred.
  • the content of the styrene-based elastomer in the resin composition for a semiconductor integrated circuit device packaging tray is preferably 3 parts by weight or more and 12 parts by weight or less with respect to 100 parts by weight of the component (A).
  • Impact resistance can be improved by setting it as 3 weight part or more.
  • heat resistance is securable by setting it as 12 weight part or less, especially 9 weight part or less.
  • the resin composition of the present invention contains 35 parts by weight or more and 70 parts by weight or less of talc with respect to 100 parts by weight of the component (A). Especially, it is preferable to contain 50 weight part or more of talc with respect to 100 weight part of component (A). By containing 35 parts by weight or more of talc, the heat resistance and dimensional stability of the molded product can be ensured. Moreover, impact resistance can be ensured by setting the content of talc to 70 parts by weight or less. Furthermore, the extrusion at the time of shaping
  • the talc is not particularly limited, but may be treated with a surface treatment agent such as a silane coupling agent or a titanate coupling agent.
  • the average particle diameter (d50) of talc is preferably 2 to 15 ⁇ m.
  • the component (E) is a polyether block polymer, and includes at least one of a block polymer of polyether and polyolefin and a polyether ester amide.
  • component (E) Peletron PVH (trade name), Peletron MP (trade name), Peletron HS (trade name), Peletron H (trade name), Peletron P (trade name) (all are Sanyo Chemical Industries, Ltd.)
  • Peletron PVH trade name
  • Peletron MP trade name
  • Peletron HS trade name
  • Peletron H trade name
  • Peletron P trade name
  • This component (E) preferably has a resistance value of less than 1 ⁇ 10 7 ⁇ / ⁇ .
  • the resistance value can be measured by pressing the component (E) at 220 ° C., adjusting the humidity at 23 ° C. and 50% RH for 24 hours, and then measuring with a surface resistance meter (ST-4, manufactured by SIMCO JAPAN).
  • the component (E) preferably has a resistance value of 5 ⁇ 10 6 ⁇ / ⁇ or less.
  • the lower limit value of the resistance value of the component (E) is not particularly limited, but is, for example, 1 ⁇ 10 4 ⁇ / ⁇ .
  • polyether examples include polyether diol, polyether diamine, and modified products thereof.
  • Polyether diol has a structure obtained by addition reaction of alkylene oxide (hereinafter sometimes abbreviated as AO) to diol, and has a general formula: H— (OA 1) m —O—E 1 —O— ( A1O) m'-H.
  • E1 represents a residue obtained by removing a hydroxyl group from a diol
  • A1 represents an alkylene group having 2 to 4 carbon atoms (hereinafter abbreviated as C)
  • m and m ′ represent the number of alkylene oxides added per hydroxyl group of the diol. .
  • n (OA1) and m ′ (A1O) may be the same or different, and when they are composed of two or more oxyalkylene groups, the bonding form is block or random or these Any combination of these may be used.
  • m and m ′ are generally integers of 1 to 300, preferably 2 to 250, more preferably 10 to 100.
  • M and m ′ may be the same or different.
  • diol examples include dihydric alcohols (for example, C2-12 aliphatic, alicyclic and aromatic ring-containing dihydric alcohols), C6-18 dihydric phenols, and tertiary amino group-containing diols.
  • dihydric alcohols for example, C2-12 aliphatic, alicyclic and aromatic ring-containing dihydric alcohols
  • C6-18 dihydric phenols examples include tertiary amino group-containing diols.
  • aliphatic dihydric alcohol examples include alkylene glycol (ethylene glycol, propylene glycol (hereinafter abbreviated as EG and PG, respectively)), 1,4-butanediol, 1,6-hexanediol, neopentyl glycol (hereinafter 1 each).
  • alicyclic dihydric alcohol examples include cyclohexanedimethanol;
  • aromatic ring-containing dihydric alcohol examples include xylylene diol.
  • dihydric phenol examples include monocyclic dihydric phenols (hydroquinone, catechol, resorcin, urushiol, etc.), bisphenols (bisphenol A, -F and -S, 4,4'-dihydroxydiphenyl-2,2-butane, Dihydroxybiphenyl and the like) and condensed polycyclic divalent phenols (dihydroxynaphthalene, binaphthol and the like).
  • monocyclic dihydric phenols hydroquinone, catechol, resorcin, urushiol, etc.
  • bisphenols bisphenol A, -F and -S, 4,4'-dihydroxydiphenyl-2,2-butane, Dihydroxybiphenyl and the like
  • condensed polycyclic divalent phenols condensed polycyclic divalent phenols
  • Examples of the tertiary amino group-containing diol include C1-12 aliphatic or alicyclic primary monoamines (methylamine, ethylamine, 1- and 2-propylamine, hexylamine, decylamine, dodecylamine, cyclopropylamine, And any one of cyclohexylamines such as cyclohexylamine and bishydroxyalkylated products of C6-12 aromatic ring-containing primary monoamines (aniline, benzylamine, etc.).
  • an aliphatic dihydric alcohol or bisphenol is preferred, and more preferred is either EG (ethylene glycol) or bisphenol A.
  • Polyether diol can be produced by addition reaction of alkylene oxide (AO) to diol.
  • alkylene oxide examples include C2-4 alkylene oxide [ethylene oxide, propylene oxide, 1,2-, 1,4-, 2,3- and 1,3-butylene oxide (hereinafter abbreviated as EO, PO, and BO, respectively).
  • EO, PO, and BO 1,3-butylene oxide
  • AO AO
  • C5-12 ⁇ -olefin, styrene Oxide and epihalohydrin (such as epichlorohydrin) can be used in a small proportion (for example, 30% or less based on the weight of total AO).
  • the coupling form may be random and / or block.
  • Preferred as AO is EO alone or a combination of EO and another AO (random and / or block addition).
  • the addition number of AO is usually an integer of 1 to 300, preferably 2 to 250, more preferably 10 to 100 per hydroxyl group of the diol.
  • Alkylene oxide (AO) can be added by a known method, for example, at a temperature of 100 to 200 ° C. in the presence of an alkali catalyst.
  • the polyether diamine has the general formula: H 2 N—A 2 — (OA 1) m —O—E 1 —O— (A 1 O) m′-A 2 —NH 2 (wherein the symbols E 1, A 1, m and m ′ are A2 is a C2-4 alkylene group, and A1 and A2 may be the same or different.
  • the polyether diamine can be obtained by changing the hydroxyl group of the polyether diol to an amino group by a known method, for example, by reducing the terminal obtained by cyanoalkylating the hydroxyl group of the polyether diol to an amino group Can be used. For example, it can be produced by reacting polyether diol with acrylonitrile and hydrogenating the resulting cyanoethylated product.
  • modified product examples include polyether diol or polyether diamine aminocarboxylic acid modified product (terminal amino group), the same isocyanate modified product (terminal isocyanate group) and the same epoxy modified product (terminal epoxy group).
  • the aminocarboxylic acid-modified product can be obtained by reacting polyether diol or polyether diamine with aminocarboxylic acid or lactam.
  • Polyolefins constituting the block polymer of polyether and polyolefin include polyolefins having carbonyl groups (preferably carboxyl groups, the same shall apply hereinafter) at both ends of the polymer, polyolefins having hydroxyl groups at both ends of the polymer, and amino groups. Can be used, such as polyolefin having both at both ends of the polymer and polyolefin having isocyanate groups at both ends of the polymer.
  • a polyolefin having a carbonyl group at one end of the polymer a polyolefin having a hydroxyl group at one end of the polymer, a polyolefin having an amino group at one end of the polymer, a polyolefin having an isocyanate group at one end of the polymer, etc.
  • a polyolefin having a carbonyl group and a polyolefin having a carbonyl group at one end of the polymer are preferable because of easy modification.
  • the polyether ester amide is, for example, a copolymer of polyamide having carboxyl groups at both ends and polyether diol.
  • examples of the polyamide include one or more of a ring-opening polymer of lactam and a self-polymer of aminocarboxylic acid.
  • the resin composition of the present invention contains 7 to 15 parts by weight of component (E) in total with respect to 100 parts by weight of component (A), component (B), component (C) and component (D). .
  • component (E) By setting it as 7 weight part or more, the surface resistance value of a molded article can be made low.
  • heat resistance can be ensured by setting it as 15 weight part or less.
  • the component (A), the component (B), the component (C), and the component (D) are added to the component ( It is preferable to contain 10 parts by weight or more of E) in total.
  • the surface resistance value when the amount of the antistatic agent added in the resin composition is increased, the surface resistance value can be lowered, but the heat resistance is inferior. On the other hand, when the addition amount of the antistatic agent is lowered, the surface resistance value is increased.
  • the content of the component (D) is set to a predetermined amount, and the component (E) having a specific structure is used to reduce the content of the component (E) to the component (A) and the component ( B) With respect to a total of 100 parts by weight of component (C) and component (D), even if the value is as low as 15 parts by weight or less, the surface resistance value can be reduced and the heat resistance is excellent. can do.
  • the resin composition of the present invention may have other additives such as pigments, dyes, fillers (glass fibers, mica, silica, etc.) depending on the purpose as long as the physical properties are not impaired. Further, an antioxidant may be included, a weathering agent, a lubricant, a release agent, and the like.
  • the resin composition of the present invention preferably does not contain a conductive filler such as conductive carbon black. By not containing a conductive filler, molding processability can be ensured, and further, coloring of the material can be prevented from being limited. It also prevents dirt from falling off the carbon.
  • the method for producing the resin composition of the present invention is not particularly limited, but a melt mixing method is desirable.
  • the injection molded product obtained from the resin composition for a semiconductor integrated circuit device packaging tray as described above satisfies the following requirements.
  • A Deflection temperature (load 1.8 MPa) measured according to ISO75 is 160 ° C. or higher (however, a test of 4 mm (thickness) ⁇ 10 mm (width) ⁇ 80 mm (length) by a method according to ISO179) Measurement using a piece)
  • B A test piece having a Charpy impact strength value measured in accordance with ISO 179 of 5 kJ / m 2 or more (however, a test piece of 4 mm (thickness) ⁇ 10 mm (width) ⁇ 80 mm (length) by a method in accordance with ISO 179) Measure using (C) Surface resistivity is less than 10 10 ⁇ / ⁇ Therefore, it is possible to provide a resin composition for a semiconductor integrated circuit device packaging tray capable of producing a tray excellent in balance of heat resistance, impact resistance, and electrostatic discharge prevention performance.
  • a molded article is manufactured as follows.
  • the resin composition is melt-kneaded using a twin screw extruder at an extrusion temperature of 300 ° C. and a rotation speed of 150 rpm to obtain pellets.
  • a test piece having a predetermined thickness is manufactured by injection molding using the pellets under conditions of a set temperature of 300 ° C. and a mold temperature of 120 ° C.
  • the physical properties (a) to (c) are measured.
  • the test piece is heated at 155 ° C. for 5 hours and left in a constant temperature and humidity chamber (23 ° C., 50% HR) for 24 hours, and then the measurement of (a) is performed.
  • a semiconductor integrated circuit device packaging tray having desired performance can be obtained by using the resin composition as described above and performing extrusion molding, injection molding, or the like.
  • the upper limit value of the deflection temperature under load (a) is not particularly limited, but is 200 ° C., for example.
  • the upper limit value of the Charpy impact strength of (b) is not particularly limited, but is 10 kJ / m 2 .
  • the lower limit value of the surface specific resistance value of (c) is not particularly limited, but is, for example, 1 ⁇ 10 4 ⁇ / ⁇ .
  • PPE-C Intrinsic viscosity (measured in chloroform at 25 ° C.) 0.45 dl / g poly (2,6-dimethyl-1,4-phenylene ether), trade name: LXR045, Bluestar New chemicals materials Co., Ltd.
  • PPE viscosity indicates a weighted average, and the viscosity of each PPE is the weight ratio of each PPE to the total PPE. Was the thing, is added value.
  • (C) Styrenic elastomer SEBS-A styrene / ethylene / butylene / styrene block copolymer, trade name: Tuftec H1041G, SEBS-B manufactured by Asahi Kasei Chemicals Corporation: maleic anhydride modified styrene / ethylene / butylene / styrene block copolymer, product Name: Tuftec M1911, manufactured by Asahi Kasei Chemicals Corporation
  • E Polyether block polymer E-1: Trade name: Peletron HS, manufactured by Sanyo Chemical Industries, Ltd., polyamide copolymer (resistance value 4 ⁇ 10 6 ⁇ / ⁇ )
  • E-2 Trade name: Peletron MP, manufactured by Sanyo Chemical Industries, Ltd., polyamide copolymer (resistance value 8 ⁇ 10 5 ⁇ / ⁇ )
  • Each of E-1 and E-2 includes at least one of a block polymer of polyether and polyolefin and polyether ester amide.
  • the resistance value was measured as follows. The component (E) was press-molded at 220 ° C., conditioned at 23 ° C. and 50% RH for 24 hours, and then measured with a surface resistance meter (ST-4, manufactured by SIMCO JAPAN).
  • Irgastat P18 polyetheresteramide composition
  • BASF Japan Ltd. resistance value 6 ⁇ 10 7 ⁇ / ⁇
  • entilla ethylene unsaturated carboxylic acid copolymer
  • Mitsui DuPont Polychemical Co., Ltd. resistance value 7 ⁇ 10 7 ⁇ / ⁇
  • Tables 1 and 2 components (B), (C), and (D) indicate ratios (parts by weight) to 100 parts by weight of component (A), and component (E) includes components (A) to (A). The ratio (part by weight) when the total of D) is 100 parts by weight is shown.
  • Example 1 Pellets (resin composition) having the composition shown in Table 1 were prepared. Specifically, PPE-A (component (A)) 30.0 parts by weight, PPE-C (component (A)) 70.0 parts by weight, HIPS (component (B)) 18.0 parts by weight, SEBS- B (component (C)) 9.0 parts by weight, E-2 (component (E)) 10 parts by weight, talc (component (D)) 55.0 parts by weight using a twin screw extruder, extrusion temperature Melt kneading was performed at 300 ° C. and a rotation speed of 150 rpm to obtain pellets. Next, this pellet was used for injection molding under the conditions of a preset temperature of 300 ° C. and a mold temperature of 120 ° C. The following test was implemented about the obtained molded article (test piece). The test results are shown in Table 1. Similarly, a tray molded product was obtained.
  • Charpy impact strength (Edgewise Impact, with notch) was measured according to ISO179 under the following conditions. Units of measurement are kJ / m 2. Test piece type: 4 mm (thickness) x 10 mm (width) x 80 mm (length) Notch type; Type A Load; 2J Temperature: 25 ° C
  • Examples 2 to 13 With the formulation shown in Table 1, pellets were obtained in the same manner as in Example 1. And the pellet was injection-molded similarly to Example 1, and the test piece was created. Similarly, a tray molded product was obtained. Further, the test was performed in the same manner as in Example 1.
  • the Charpy impact strength is 5 kJ / m 2 or more
  • the deflection temperature under load is 160 ° C. or more
  • the surface resistance value is less than 1 ⁇ 10 10 ⁇ / ⁇
  • the impact resistance, heat resistance, and surface resistance value are improved. It was excellent. Further, it was found that the appearance is particularly good when an acid-modified styrene elastomer is used.
  • Comparative Example 1 since the content of the component (E) was small, the surface resistance value was high.
  • the heat resistance was low because the content of component (E) was too large.
  • Comparative Examples 3 to 6 since an antistatic agent different from the component (E) was used, the surface resistance value was high.
  • Comparative Example 7 since the viscosity of the component (A) was too low, the impact resistance was poor. In Comparative Example 8, the content of the component (C) was too small, so that the impact resistance was poor. In comparative example 9, since there was too much content of a component (C), it became inferior to heat resistance. In comparative example 10, since there were too many components (B), it became inferior to heat resistance. In addition, Examples 1 to 13 were superior in balance of impact resistance, heat resistance, and surface resistance value to those disclosed in Patent Document 1.

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  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

L'invention concerne une composition de résine qui contient (A) une résine de polyphénylène éther, (B) 0 à 20 parties en poids de résine de polystyrène pour 100 parties en poids du constituant (A), (C) 3 à 12 parties en poids d'élastomère à base de styrène pour 100 parties en poids du constituant (A), (D) 35 à 70 parties en poids de talc pour 100 parties en poids du constituant (A), (E) un polymère bloc de polyéther et polyoléfine qui est un polymère bloc à base de polyéther et/ou un polyétheresteramide, la teneur du constituant (E) étant de 7 à 15 parties en poids pour 100 parties totales en poids des constituants (A), (B), (C) et (D). L'invention concerne également un article moulé qui satisfait aux exigences suivantes : (a) la température de fléchissement sous charge (charge de 1,8 MPa) mesurée conformément à la norme ISO 75 est d'au moins 160 °C, (b) la valeur de la résistance aux essais Charpy mesurée selon la norme ISO 179 est supérieure ou égale à 5 kJ/m2 et c) la valeur de résistivité superficielle est inférieure à 1010 Ω/□.
PCT/JP2012/008165 2012-12-20 2012-12-20 Composition de résine pour plaque d'encapsulation de dispositif à circuit intégré à semi-conducteur et plaque d'encapsulation de dispositifà circuit intégré à semi-conducteur Ceased WO2014097360A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP2012/008165 WO2014097360A1 (fr) 2012-12-20 2012-12-20 Composition de résine pour plaque d'encapsulation de dispositif à circuit intégré à semi-conducteur et plaque d'encapsulation de dispositifà circuit intégré à semi-conducteur

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2012/008165 WO2014097360A1 (fr) 2012-12-20 2012-12-20 Composition de résine pour plaque d'encapsulation de dispositif à circuit intégré à semi-conducteur et plaque d'encapsulation de dispositifà circuit intégré à semi-conducteur

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WO2014097360A1 true WO2014097360A1 (fr) 2014-06-26

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PCT/JP2012/008165 Ceased WO2014097360A1 (fr) 2012-12-20 2012-12-20 Composition de résine pour plaque d'encapsulation de dispositif à circuit intégré à semi-conducteur et plaque d'encapsulation de dispositifà circuit intégré à semi-conducteur

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109852032A (zh) * 2019-02-13 2019-06-07 湖南恒屹新材料有限公司 一种聚苯醚树脂基复合材料及其制备方法和应用

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JPH03188158A (ja) * 1989-10-20 1991-08-16 General Electric Co <Ge> 帯電防止性ポリフェニレンエーテル樹脂組成物及び帯電防止性付与法
JPH06240131A (ja) * 1993-02-16 1994-08-30 Mitsubishi Gas Chem Co Inc 導電性ポリフェニレンエーテル系樹脂組成物
JPH08188710A (ja) * 1995-01-10 1996-07-23 Asahi Chem Ind Co Ltd 押出性良好導電性樹脂組成物
JPH10316847A (ja) * 1997-05-19 1998-12-02 Asahi Chem Ind Co Ltd 耐熱ｉｃ部材用樹脂組成物および成形体
JP2001192517A (ja) * 2000-01-12 2001-07-17 Denki Kagaku Kogyo Kk 樹脂組成物および電子部品容器
JP2011006627A (ja) * 2009-06-29 2011-01-13 Lion Corp 電気電子部品包装材料成形用導電性ポリフェニレンエーテル樹脂組成物
WO2012001984A1 (fr) * 2010-06-30 2012-01-05 三洋化成工業株式会社 Agent antistatique et composition de résine antistatique
JP2013014702A (ja) * 2011-07-05 2013-01-24 Riken Technos Corp 熱可塑性樹脂組成物

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03188158A (ja) * 1989-10-20 1991-08-16 General Electric Co <Ge> 帯電防止性ポリフェニレンエーテル樹脂組成物及び帯電防止性付与法
JPH06240131A (ja) * 1993-02-16 1994-08-30 Mitsubishi Gas Chem Co Inc 導電性ポリフェニレンエーテル系樹脂組成物
JPH08188710A (ja) * 1995-01-10 1996-07-23 Asahi Chem Ind Co Ltd 押出性良好導電性樹脂組成物
JPH10316847A (ja) * 1997-05-19 1998-12-02 Asahi Chem Ind Co Ltd 耐熱ｉｃ部材用樹脂組成物および成形体
JP2001192517A (ja) * 2000-01-12 2001-07-17 Denki Kagaku Kogyo Kk 樹脂組成物および電子部品容器
JP2011006627A (ja) * 2009-06-29 2011-01-13 Lion Corp 電気電子部品包装材料成形用導電性ポリフェニレンエーテル樹脂組成物
WO2012001984A1 (fr) * 2010-06-30 2012-01-05 三洋化成工業株式会社 Agent antistatique et composition de résine antistatique
JP2013014702A (ja) * 2011-07-05 2013-01-24 Riken Technos Corp 熱可塑性樹脂組成物

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109852032A (zh) * 2019-02-13 2019-06-07 湖南恒屹新材料有限公司 一种聚苯醚树脂基复合材料及其制备方法和应用

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