[go: up one dir, main page]

WO2014088405A1 - A method of producing nanowires of two different materials - Google Patents

A method of producing nanowires of two different materials Download PDF

Info

Publication number
WO2014088405A1
WO2014088405A1 PCT/MY2013/000227 MY2013000227W WO2014088405A1 WO 2014088405 A1 WO2014088405 A1 WO 2014088405A1 MY 2013000227 W MY2013000227 W MY 2013000227W WO 2014088405 A1 WO2014088405 A1 WO 2014088405A1
Authority
WO
WIPO (PCT)
Prior art keywords
nanowires
silicon
gold catalyst
substrate
nitride layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/MY2013/000227
Other languages
French (fr)
Inventor
Wai Yee Lee
Daniel Chia Sheng Bien
Aun Shih Teh
Khairul Anuar ABD WAHID
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mimos Bhd
Original Assignee
Mimos Bhd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mimos Bhd filed Critical Mimos Bhd
Publication of WO2014088405A1 publication Critical patent/WO2014088405A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02603—Nanowires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H01L21/02645—Seed materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02653—Vapour-liquid-solid growth

Definitions

  • the present invention relates to a method of producing vertical nanowires using single catalyst material.
  • US 7344961 describes a method for producing nanowires that includes providing a thin film of a catalyst material with varying thickness on a substrate, heating the substrate and thin film, such that the thin film disassociates at the relatively thinner regions and vapor depositing a semiconductor onto the substrate to produce nanowires.
  • a method for producing nanowires that includes providing a thin film of a catalyst material with varying thickness on a substrate, heating the substrate and thin film, such that the thin film disassociates at the relatively thinner regions and vapor depositing a semiconductor onto the substrate to produce nanowires.
  • only one type of nanowire is grown in the working area and it does not cover electrical contacts to the nanowires. Therefore the method is not ready for full device application as it will not be able to sense the environment.
  • a method of producing vertical nanowires characterized in that, the method uses single catalyst material, the method includes the steps of depositing an insulating oxide or nitride layer on a substrate surface, depositing a gold catalyst layer on top of the insulating oxide or nitride layer, annealing the substrate with gold catalyst at temperature above 350°C, such that nanoparticles are of diameter in range of 1 to 100 nm, growing zinc oxide nanowires from exposed gold catalyst by chemical vapour deposition (CVD) with diethylzinc as a precursor and growing silicon nanowires from remaining gold catalyst nanoparticles with silicon as precursor, such that vertical type zinc oxide nanowires are produced and laterally connected by silicon nanowires wherein the insulating oxide or nitride layer is not required when the substrate (105) is insulative material.
  • CVD chemical vapour deposition
  • Figure 1 shows a cross sectional view of ZnO nanowires grown first before the silicon nanowire contacts in the present embodiment of the invention
  • Figure 2 shows a flowchart of cross sectional views showing a method of producing vertical nanowires using single catalyst material in the present embodiment of the invention
  • Figure 3 shows a top view of vertically grown ZnO nanowires by chemical vapour deposition method with gold catalyst in the preferred embodiment of the invention.
  • Figure 4 shows a top view of silicon nanowires that have been grown utilizing the remaining un-used gold catalyst in the present invention.
  • the present invention relates to a method of producing vertical nanowires using single catalyst material.
  • this specification will describe the present invention according to the preferred embodiment of the present invention. However, it is to be understood that limiting the description to the preferred embodiment of the invention is merely to facilitate discussion of the present invention and it is envisioned that those skilled in the art may devise various modifications and equivalents without departing from the scope of the appended claims.
  • Figure 2 illustrates a method of producing vertical nanowires using single catalyst material.
  • the method includes the steps of depositing an insulating oxide or nitride layer (101) on a substrate (105) surface, depositing a gold catalyst layer (103) on top of the insulating oxide or nitride layer (101), annealing the substrate (105) with gold catalyst at temperature above 350°C, such that nanoparticles are of diameter in range of 1 to 100 nm, growing zinc oxide nanowires from exposed gold catalyst by chemical vapour deposition (CVD) with diethylzinc as a precursor and growing silicon nanowires (107) from remaining gold catalyst nanoparticles with silicon as precursor, such that vertical type zinc oxide (ZnO) nanowires (109) are produced and laterally connected by silicon nanowires (107) wherein the insulating oxide or nitride layer (101) is not required when the substrate (105) is insulative material.
  • CVD chemical vapour deposition
  • ZnO vertical type zinc oxide
  • the gold catalyst was nucleated at temperature of above 350°C to form catalyst nanoparticles prior to the nanowire growth.
  • not all the gold (Au) catalyst particles take part in the initial ZnO nanowire growth by chemical vapour deposition (CVD) method. Remaining catalyst materials were then subjected to silicon nanowire growth also by CVD.
  • CVD chemical vapour deposition
  • During the initial ZnO nanowire growth process not all the gold catalyst is consumed as there is a competing nature of the catalyst with the gas precursor where some catalysts are more reactive thus enabling the nucleation of nanowires much better as compared to the catalyst in its surroundings. Hence, this allows only a single catalyst to be used for growing the two types of nanowires.
  • the ZnO nanowires (109) are grown first before the silicon nanowire contacts to prevent the silicon nanowires (107) which form a mesh from inhibiting the vertical growth of the ZnO nanowires (109) as seen in Figure 1.
  • the ZnO nanowires (109) will be used as the sensing elements while the connecting silicon nanowires (107) will measure the change in electrical conductivity during the sensor operation.
  • the silicon nanowires (107) are doped with n-type or p-type dopant materials to improve electrical conductivity.
  • the first step involves depositing an insulating layer onto the substrate (105) surface ( Figure 2a).
  • the insulating layer is of silicon dioxide or silicon nitride deposited by physical or chemical vapour deposition (PVD or CVD) or silicon dioxide grown by thermal oxidation method.
  • the oxide/nitride layer acts to isolate the nanotubes and nanowires from the conducting substrate (105), e.g. silicon.
  • the second step involves depositing gold (Au) metal catalyst material on top of the insulating surface ( Figure 2b).
  • the catalyst is deposited by physical deposition or sputtering. Thickness of the deposited Au catalyst is typically less than 30nm.
  • the third step involves annealing the substrate (105) at temperatures 350 to 700°C to allow nucleation of the material across the substrate (105) (Figure 2c).
  • the nucleated catalyst particles are of diameters in range between 1 to 100nm.
  • the fourth step involves growing of vertical ZnO nanowires (109) from the exposed gold metal catalyst nanoparticles ( Figure 2d). These nanowires are grown by chemical vapour deposition method with diethylzinc (C 2 H 5 ) 2 Zn as the growth precursor.
  • the fifth step involves growing of silicon nanowires (107) from the remaining gold catalyst nanoparticles (Figure 2e). Similar to ZnO nanowires (109), the silicon nanowires (107) are also grown by chemical vapour deposition method with silane (SiH 4 ) as the growth precursor.
  • the vertically grown ZnO nanowires (109) by chemical vapour deposition method with gold catalyst are as shown in Figure 3.
  • silicon nanowires (107) has been grown utilizing the remaining un-used gold catalyst.
  • the invention uses silicon nanowires (107) to connect the vertical ZnO nanowires (109) to measure a change in electrical conductivity and in the meantime leaving the ZnO nanowires (109) exposed which is required for sensor applications.
  • gold Au
  • Al aluminium
  • Cu copper
  • Au gold
  • gold is the common metal catalyst material that can be used to grow both ZnO and silicon nanowires (107).
  • the gold catalyst was nucleated at temperature of above 350 °C to form catalyst nanoparticles prior to the nanowire growth, unlike those of the prior art.
  • the invention is an improvement over the prior art where there are two types of nanowires are connected where the silicon nanowires (107) connects the vertical ZnO nanowires (109).
  • the invention also does not require a thin film material for contacts, as the silicon nanowires (107) are the contact to the ZnO nanowire (109) and ready to be integrated for sensor applications.
  • the invention also only requires one catalyst type to grow two nanowire types.
  • This invention is adapted for producing vertical ZnO nanowires (109).
  • the disclosed invention is suitable, but not restricted to, for use in sensor applications.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Catalysts (AREA)

Abstract

A method of producing vertical nanowires using single catalyst material is provided, the method includes the steps of depositing an insulating oxide or nitride layer (101) on a substrate surface, depositing a gold catalyst layer (103) on top of the insulating oxide or nitride layer (101), annealing the substrate with the gold catalyst layer at temperature above 350°C, such that nanoparticles are formed of a diameter in the range of 1 to 100 nm, growing zinc oxide nanowires from the exposed gold catalyst nanoparticles by chemical vapour deposition (CVD) with diethylzinc as a precursor, and growing silicon nanowires from the remaining gold catalyst nanoparticles with silicon as precursor, such that vertical type zinc oxide nanowires are produced and laterally connected by silicon nanowires wherein the insulating oxide or nitride layer (101) is not required when the substrate is an insulative material.

Description

A METHOD OF PRODUCING NANOWIRES OF TWO DIFFERENT
MATERIALS
FIELD OF INVENTION The present invention relates to a method of producing vertical nanowires using single catalyst material.
BACKGROUND OF INVENTION There have been significant development efforts by researchers in the area of nanotube and nanowire growth or synthesis for potential applications in the area of electronics, photonics and sensors. These include research in the type of metal catalyst used for growth, wherein the growth techniques and dimensions of the nanotubes and nanowires by controlling the growth temperature, gas ratios, pressure and plasma. Most of these works concentrate on the growth of single type nanotube or nanowire in a working area. In the work of sensor technology, if a combination of at least 2 types of nanotube and nanowire selective to the same ions can be grown in the same area, it increases the overall selectivity of the sensing element. In sensor applications in particular, ZnO nanowires are used as sensing elements are typically left exposed to enable detection,of ions. As these nanowires can be of vertical type, to connect them to enable electrical measurements and at the same time leaving them exposed for sensing is a challenge.
US 7608905 describes multiple sets of independently addressable interdigitated nanowires. However, both nanowires are of a vertical type and cannot be used as a gas sensor as all the nanowires are enclosed and not contactable with the environment.
US 7344961 describes a method for producing nanowires that includes providing a thin film of a catalyst material with varying thickness on a substrate, heating the substrate and thin film, such that the thin film disassociates at the relatively thinner regions and vapor depositing a semiconductor onto the substrate to produce nanowires. However, only one type of nanowire is grown in the working area and it does not cover electrical contacts to the nanowires. Therefore the method is not ready for full device application as it will not be able to sense the environment.
Hence this limits the sensors to only lateral type ZnO nanowires where they normally forms bundles which can results in variations between different sensors.
SUMMARY OF INVENTION
Accordingly, there is provided a method of producing vertical nanowires, characterized in that, the method uses single catalyst material, the method includes the steps of depositing an insulating oxide or nitride layer on a substrate surface, depositing a gold catalyst layer on top of the insulating oxide or nitride layer, annealing the substrate with gold catalyst at temperature above 350°C, such that nanoparticles are of diameter in range of 1 to 100 nm, growing zinc oxide nanowires from exposed gold catalyst by chemical vapour deposition (CVD) with diethylzinc as a precursor and growing silicon nanowires from remaining gold catalyst nanoparticles with silicon as precursor, such that vertical type zinc oxide nanowires are produced and laterally connected by silicon nanowires wherein the insulating oxide or nitride layer is not required when the substrate (105) is insulative material.
The present invention consists of several novel features and a combination of parts hereinafter fully described and illustrated in the accompanying description and drawings, it being understood that various changes in the details may be made without departing from the scope of the invention or sacrificing any of the advantages of the present invention.
BRIEF DESCRIPTION OF THE DRAWINGS
The present invention will be fully understood from the detailed description given herein below and the accompanying drawings which are given by way of illustration only, and thus are not limitative of the present invention, wherein:
Figure 1 shows a cross sectional view of ZnO nanowires grown first before the silicon nanowire contacts in the present embodiment of the invention;
Figure 2 shows a flowchart of cross sectional views showing a method of producing vertical nanowires using single catalyst material in the present embodiment of the invention;
Figure 3 shows a top view of vertically grown ZnO nanowires by chemical vapour deposition method with gold catalyst in the preferred embodiment of the invention; and
Figure 4 shows a top view of silicon nanowires that have been grown utilizing the remaining un-used gold catalyst in the present invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
The present invention relates to a method of producing vertical nanowires using single catalyst material. Hereinafter, this specification will describe the present invention according to the preferred embodiment of the present invention. However, it is to be understood that limiting the description to the preferred embodiment of the invention is merely to facilitate discussion of the present invention and it is envisioned that those skilled in the art may devise various modifications and equivalents without departing from the scope of the appended claims.
The following detailed description of the preferred embodiment will now be described in accordance with the attached drawings, either individually or in combination. Figure 2 illustrates a method of producing vertical nanowires using single catalyst material. The method includes the steps of depositing an insulating oxide or nitride layer (101) on a substrate (105) surface, depositing a gold catalyst layer (103) on top of the insulating oxide or nitride layer (101), annealing the substrate (105) with gold catalyst at temperature above 350°C, such that nanoparticles are of diameter in range of 1 to 100 nm, growing zinc oxide nanowires from exposed gold catalyst by chemical vapour deposition (CVD) with diethylzinc as a precursor and growing silicon nanowires (107) from remaining gold catalyst nanoparticles with silicon as precursor, such that vertical type zinc oxide (ZnO) nanowires (109) are produced and laterally connected by silicon nanowires (107) wherein the insulating oxide or nitride layer (101) is not required when the substrate (105) is insulative material.
The gold catalyst was nucleated at temperature of above 350°C to form catalyst nanoparticles prior to the nanowire growth. In this method, not all the gold (Au) catalyst particles take part in the initial ZnO nanowire growth by chemical vapour deposition (CVD) method. Remaining catalyst materials were then subjected to silicon nanowire growth also by CVD. During the initial ZnO nanowire growth process, not all the gold catalyst is consumed as there is a competing nature of the catalyst with the gas precursor where some catalysts are more reactive thus enabling the nucleation of nanowires much better as compared to the catalyst in its surroundings. Hence, this allows only a single catalyst to be used for growing the two types of nanowires.
Growth sequence is important where the ZnO nanowires (109) are grown first before the silicon nanowire contacts to prevent the silicon nanowires (107) which form a mesh from inhibiting the vertical growth of the ZnO nanowires (109) as seen in Figure 1. For sensor applications, the ZnO nanowires (109) will be used as the sensing elements while the connecting silicon nanowires (107) will measure the change in electrical conductivity during the sensor operation.
The silicon nanowires (107) are doped with n-type or p-type dopant materials to improve electrical conductivity. Detailed process flow is described in the following sections and illustrated in Figure 2. The first step involves depositing an insulating layer onto the substrate (105) surface (Figure 2a). The insulating layer is of silicon dioxide or silicon nitride deposited by physical or chemical vapour deposition (PVD or CVD) or silicon dioxide grown by thermal oxidation method. The oxide/nitride layer acts to isolate the nanotubes and nanowires from the conducting substrate (105), e.g. silicon. The second step involves depositing gold (Au) metal catalyst material on top of the insulating surface (Figure 2b). The catalyst is deposited by physical deposition or sputtering. Thickness of the deposited Au catalyst is typically less than 30nm.
The third step involves annealing the substrate (105) at temperatures 350 to 700°C to allow nucleation of the material across the substrate (105) (Figure 2c). The nucleated catalyst particles are of diameters in range between 1 to 100nm. The fourth step involves growing of vertical ZnO nanowires (109) from the exposed gold metal catalyst nanoparticles (Figure 2d). These nanowires are grown by chemical vapour deposition method with diethylzinc (C2H5)2Zn as the growth precursor. The fifth step involves growing of silicon nanowires (107) from the remaining gold catalyst nanoparticles (Figure 2e). Similar to ZnO nanowires (109), the silicon nanowires (107) are also grown by chemical vapour deposition method with silane (SiH4) as the growth precursor.
The vertically grown ZnO nanowires (109) by chemical vapour deposition method with gold catalyst are as shown in Figure 3. In Figure 4, silicon nanowires (107) has been grown utilizing the remaining un-used gold catalyst.
The invention uses silicon nanowires (107) to connect the vertical ZnO nanowires (109) to measure a change in electrical conductivity and in the meantime leaving the ZnO nanowires (109) exposed which is required for sensor applications. In order to grow ZnO nanowires (109), gold (Au) is typically used as the metal catalyst and to grow silicon nanowires (107), a choice of either aluminium (Al), copper (Cu) or gold (Au) thin films can be used as the catalyst material. However, gold is the common metal catalyst material that can be used to grow both ZnO and silicon nanowires (107). The gold catalyst was nucleated at temperature of above 350 °C to form catalyst nanoparticles prior to the nanowire growth, unlike those of the prior art. Therefore, the invention is an improvement over the prior art where there are two types of nanowires are connected where the silicon nanowires (107) connects the vertical ZnO nanowires (109). The invention also does not require a thin film material for contacts, as the silicon nanowires (107) are the contact to the ZnO nanowire (109) and ready to be integrated for sensor applications. The invention also only requires one catalyst type to grow two nanowire types. This invention is adapted for producing vertical ZnO nanowires (109). The disclosed invention is suitable, but not restricted to, for use in sensor applications.

Claims

1. A method of producing vertical nanowires, characterized in that, the method uses single catalyst material, the method includes the steps of: i. depositing an insulating oxide or nitride layer (101) on a substrate (105) surface;
ii. depositing a gold catalyst layer (103) on top of the insulating oxide or nitride layer (101);
iii. annealing the substrate (105) with gold catalyst at temperature above 350°C, such that nanoparticles are of diameter in range of 1 to 100 nm;
iv. growing zinc oxide nanowires from exposed gold catalyst by chemical vapour deposition (CVD) with diethylzinc as a precursor; and
v. growing silicon nanowires (107) from remaining gold catalyst nanoparticles with silicon as precursor,
such that vertical type zinc oxide nanowires are produced and laterally connected by silicon nanowires (107),
wherein the insulating oxide or nitride layer (101) is not required when the substrate (105) is insulative material.
2. The method as claimed in claim 1 , wherein the deposition of insulating oxide or nitride layer (101) is done by physical vapour deposition (PVD), chemical vapour deposition (CVD) or thermal oxidation method.
3. The method as claimed in claim 1 , wherein the deposition of gold catalyst layer (103) by evaporation or sputtering methods.
4. The method as claimed in claim 1 , wherein the silicon nanowires (107) are doped with n type or p type materials.
PCT/MY2013/000227 2012-12-06 2013-12-03 A method of producing nanowires of two different materials Ceased WO2014088405A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
MYPI2012701094A MY164421A (en) 2012-12-06 2012-12-06 A method of producing vertical nanowires
MYPI2012701094 2012-12-06

Publications (1)

Publication Number Publication Date
WO2014088405A1 true WO2014088405A1 (en) 2014-06-12

Family

ID=50023817

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/MY2013/000227 Ceased WO2014088405A1 (en) 2012-12-06 2013-12-03 A method of producing nanowires of two different materials

Country Status (2)

Country Link
MY (1) MY164421A (en)
WO (1) WO2014088405A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114291839A (en) * 2022-01-07 2022-04-08 辽宁师范大学 Low-cost superfine beta-Ga2O3Method for preparing nano-wire
CN114530465A (en) * 2020-11-23 2022-05-24 联华电子股份有限公司 Image sensor device and method of making the same

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7344961B2 (en) 2004-07-07 2008-03-18 Nanosys, Inc. Methods for nanowire growth
US20080283821A1 (en) * 2007-05-17 2008-11-20 Samsung Corning Co., Ltd. Method of growing gan crystal on silicon substrate, and light emitting device and method of manufacturing thereof
US7608905B2 (en) 2006-10-17 2009-10-27 Hewlett-Packard Development Company, L.P. Independently addressable interdigitated nanowires
US20110136288A1 (en) * 2009-12-08 2011-06-09 Zena Technologies, Inc. Manufacturing nanowire photo-detector grown on a back-side illuminated image sensor
US20120070964A1 (en) * 2010-09-22 2012-03-22 Commissariat A L'energie Atomique Et Aux Energies Alternatives Method for eliminating the metal catalyst residues on the surface of wires produced by catalytic growth
WO2012070924A1 (en) * 2010-11-24 2012-05-31 Mimos Berhad A method for nanowires and nanotubes growth

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7344961B2 (en) 2004-07-07 2008-03-18 Nanosys, Inc. Methods for nanowire growth
US7608905B2 (en) 2006-10-17 2009-10-27 Hewlett-Packard Development Company, L.P. Independently addressable interdigitated nanowires
US20080283821A1 (en) * 2007-05-17 2008-11-20 Samsung Corning Co., Ltd. Method of growing gan crystal on silicon substrate, and light emitting device and method of manufacturing thereof
US20110136288A1 (en) * 2009-12-08 2011-06-09 Zena Technologies, Inc. Manufacturing nanowire photo-detector grown on a back-side illuminated image sensor
US20120070964A1 (en) * 2010-09-22 2012-03-22 Commissariat A L'energie Atomique Et Aux Energies Alternatives Method for eliminating the metal catalyst residues on the surface of wires produced by catalytic growth
WO2012070924A1 (en) * 2010-11-24 2012-05-31 Mimos Berhad A method for nanowires and nanotubes growth

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114530465A (en) * 2020-11-23 2022-05-24 联华电子股份有限公司 Image sensor device and method of making the same
CN114291839A (en) * 2022-01-07 2022-04-08 辽宁师范大学 Low-cost superfine beta-Ga2O3Method for preparing nano-wire
CN114291839B (en) * 2022-01-07 2024-02-02 辽宁师范大学 A low-cost preparation method of ultra-fine β-Ga2O3 nanowires

Also Published As

Publication number Publication date
MY164421A (en) 2017-12-15

Similar Documents

Publication Publication Date Title
EP2623968B1 (en) Gas sensor comprising a gate structure with capacitively coupled platinum crystal grains
Chen et al. Probing surface band bending of surface-engineered metal oxide nanowires
JP4574570B2 (en) Method for manufacturing nanowire CHEMFET sensor device using selective deposition of nanowire
US10354935B2 (en) Graphene structure and method for manufacturing the same
US20170356869A1 (en) Gas sensor, humidity sensor, and method for forming a sensor layer
Hoye et al. Synthesis and modeling of uniform complex metal oxides by close-proximity atmospheric pressure chemical vapor deposition
CN102326258A (en) Photovoltaic structure and on short column, adopt the manufacturing approach of nano wire
US20140260545A1 (en) Sensor and sensing method
EP3141523B1 (en) Method of forming a nanostructure comprising nanowires and semiconductor device including the nanostructure
KR20150017422A (en) Graphene/Silicon Nanowire Molecular Sensor and the Fabricating Method and Method of Identification Using thereof
KR101475266B1 (en) Board for growing high quality graphene layer and growing method thereof
WO2014088403A1 (en) A resistive gas sensor device
KR101381317B1 (en) Core-shell structured Ga2O3-ZnO nanorod, a preparation method thereof, and gas sensor using the same
TW201142277A (en) Gas sensor with a zinc-oxide nanostructure and method for producing the same
KR20190015133A (en) Method for manufacturing a gas sensor, and gas sensor using same
Bikesh et al. Development of Ethanol Sensor Based on Vertically Aligned SnO 2/TiO 2 Heterojunction Nanowire Using GLAD Technique
WO2014088405A1 (en) A method of producing nanowires of two different materials
Barth et al. Localized growth and in situ integration of nanowires for device applications
US20150364706A1 (en) Method of making n-type semiconductor layer and method of making n-type thin film transistor
Hsu et al. Fabrication of Ni-silicide/Si heterostructured nanowire arrays by glancing angle deposition and solid state reaction
JP2004179643A (en) Thermoelectric conversion material thin film, sensor element and method of manufacturing the same
Hsueh et al. Si nanowire-based humidity sensors prepared on glass substrate
CN101777544A (en) P-type silicon carbide device and method for improving ohmic contact performance thereof
KR20100010888A (en) Method for preparing zto thin film, thin film transistor using the same and method for preparing thin film transistor
US20180076324A1 (en) Method of contact formation between metal and semiconductor

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13824529

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 13824529

Country of ref document: EP

Kind code of ref document: A1