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WO2014081200A1 - Boîtier del de type à vision latérale, module de matrice d'éclairage l'incluant et leur procédé de fabrication - Google Patents

Boîtier del de type à vision latérale, module de matrice d'éclairage l'incluant et leur procédé de fabrication Download PDF

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Publication number
WO2014081200A1
WO2014081200A1 PCT/KR2013/010587 KR2013010587W WO2014081200A1 WO 2014081200 A1 WO2014081200 A1 WO 2014081200A1 KR 2013010587 W KR2013010587 W KR 2013010587W WO 2014081200 A1 WO2014081200 A1 WO 2014081200A1
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WIPO (PCT)
Prior art keywords
led package
conductive pattern
led
substrate
package substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2013/010587
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English (en)
Korean (ko)
Inventor
서일경
박병규
이종국
최재빈
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Seoul Semiconductor Co Ltd
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Seoul Semiconductor Co Ltd
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Filing date
Publication date
Application filed by Seoul Semiconductor Co Ltd filed Critical Seoul Semiconductor Co Ltd
Publication of WO2014081200A1 publication Critical patent/WO2014081200A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133603—Direct backlight with LEDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133612—Electrical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain

Definitions

  • the present invention relates to a side emitting LED package, an illumination array module comprising the same, and a method of manufacturing the same. More specifically, by forming a lighting array module using a side light emitting LED package having a wide light direct angle characteristic, the height of the lighting device is formed to be slim, or the surface of the LED package used to provide uniform surface lighting or linear lighting.
  • the present invention relates to a side emitting LED package capable of reducing the number, an illumination array module including the same, and a method of manufacturing the same.
  • LEDs Light Emitting Diodes
  • LED lighting units such as surface light sources, line light sources, or LED backlight units of flat panel displays use a plurality of LED package arrays mounted on a lighting substrate.
  • US Patent No. 8,177,391 "TUBE-TYPE OR CHANNEL-TYPE LED LIGHTING APPARATUS" discloses a line light source lighting apparatus using a conventional LED package.
  • Conventional lighting devices are manufactured using conventional LED packages consisting of LED chips, lead frames, reflectors, moldings, and the like. According to the LED package, the light emitted through the side of the LED chip is refracted by the reflector constituting the body portion is emitted to the upper surface of the LED package. Therefore, the brightness of the upper surface of the LED package is increased due to the refraction of the side light of the reflector.
  • the present invention is to solve the above problems, the side-emitting LED package according to the present invention, an illumination array module comprising the same, and a method of manufacturing the same by using a wide angle of view of the side-emitting LED package does not include a reflector
  • An object of the present invention is to reduce the number of LED packages used in the lighting device or the backlight unit or to reduce the height of the lighting device or the backlight unit to provide a slim appearance.
  • an illumination array module including the same, and a manufacturing method thereof, the light of the light incident on the side of the LED package by forming the highest height of the fluorescent layer to 200% to 600% of the LED chip height It is another object to widen the light directing angle by increasing the transmission probability.
  • the LED package, the lighting array module including the same, and a manufacturing method thereof according to an embodiment of the present invention the first conductive pattern formed on one side of the LED package substrate further comprises an extension extending to the other side It is another object to improve the process efficiency of a wire bonding process.
  • a method of manufacturing a lighting array module including: forming a substrate including N LED package substrates; A second step of placing N LED chips on top of N LED package substrates, respectively; Electrically connecting a first conductive pattern of the LED package substrate to a first conductive electrode exposed on one surface of the LED chip, and a second conductive pattern of the LED package substrate and a second exposed surface of the LED chip A third step of electrically connecting the conductive electrode; Forming a fluorescent layer on the front surface of the substrate to include a top surface of the substrate and side and top surfaces of the LED chip; Cutting the substrate into units of the N LED package substrates to form N side emitting LED packages; And a first connection pad electrically connected to the first conductive pattern of the side emitting LED package and a second connection pad electrically connected to the second conductive pattern of the side emitting LED package to the connection electrodes of the lighting array substrate. And a sixth step of placing the plurality of side emitting LED packages on the lighting array substrate to be spaced
  • the first step is characterized in that for forming the LED package substrate in an area of 150% to 300% of the upper surface area of the LED chip.
  • the fourth step is characterized in that the fluorescent layer is formed at the highest height of 200% to 600% of the height of the LED chip.
  • the first conductive pattern is located on one side of the upper surface of the LED package substrate, the second conductive pattern of the upper surface of the LED package substrate Located on the other side, the first conductive pattern is formed on the LED package substrate to include a portion extending to the other side of the upper surface of the LED package substrate, wherein the second step, the The LED chip may be mounted, and the third step may include connecting the extension part and the first conductive electrode by wire bonding, and connecting the second conductive pattern and the second conductive electrode by wire bonding. do.
  • the first step is to form the first conductive pattern in an area of 40% to 60% of the upper surface area of the LED package substrate, the upper surface of the LED package substrate
  • the second conductive pattern is formed in an area of 20% or less of an area
  • the first connection pad is formed in an area of 50% to 70% of an area of the bottom surface of the LED package substrate, and 10% of an area of the bottom surface of the LED package substrate.
  • forming the second connection pad in an area of 30% to 30%.
  • the first step, the third conductive pattern is further formed on the other side of the upper surface of the LED package substrate, the second step, the third conductive pattern
  • the zener diode is further mounted so that the bottom surface of the zener diode is electrically connected to each other, and the third step may include electrically connecting the top surface of the zener diode and the first conductive pattern.
  • the method of manufacturing a side-emitting LED package according to the present invention includes a first step of forming a substrate including N LED package substrates; A second step of placing N LED chips on top of N LED package substrates, respectively; Electrically connecting a first conductive pattern of the LED package substrate to a first conductive electrode exposed on one surface of the LED chip, and a second conductive pattern of the LED package substrate and a second exposed surface of the LED chip A third step of electrically connecting the conductive electrode; Forming a fluorescent layer on the front surface of the substrate to include a top surface of the substrate and side and top surfaces of the LED chip; And cutting the substrate in units of the N LED package substrates to form N side emitting LED packages.
  • the first step is characterized in that for forming the LED package substrate with an area of 150% to 300% of the upper surface area of the LED chip.
  • the fourth step is characterized in that the fluorescent layer is formed at the highest height of 200% to 600% of the height of the LED chip.
  • Lighting array module according to the present invention, the side-emitting LED package; And an illumination array substrate electrically connected to the side light emitting LED package and mounting the side light emitting LED package, wherein the side light emitting LED package includes a first conductive electrode, a second conductive electrode, and the LED package.
  • LED chip comprising a main light emitting surface formed on the upper surface of the; The LED chip is mounted on an upper surface, and a first conductive pattern electrically connected to the first conductive electrode and a second conductive pattern electrically connected to the second conductive electrode are formed on an upper surface of the LED chip.
  • a first connection pad electrically connected to the first conductive pattern and electrically connected to the illumination array substrate, and a second connection pad electrically connected to the second conductive pattern and electrically connected to the illumination array substrate are formed.
  • an LED package substrate having side surfaces exposed to the outside.
  • a fluorescent layer including an upper surface of the LED package substrate, an upper surface of the LED chip, and a side surface of the LED chip therein, having an area equal to that of the LED package substrate, and having an upper surface and a side surface exposed to the outside. Characterized in that.
  • the LED package substrate characterized in that the area of 150% to 300% of the upper surface area of the LED chip.
  • the fluorescent layer is characterized in that it has a maximum height of 200% to 600% of the height of the LED chip.
  • the LED package substrate, the first conductive pattern is located on one side of the upper surface, the second conductive pattern is located on the other side of the upper surface, the first conductive pattern And an extension part extending to the other side, wherein the LED chip is mounted on the first conductive pattern, and the first conductivity type electrode is connected to the extension part by wire bonding, and the second conductive part.
  • the type electrode is connected to the second conductive pattern by wire bonding.
  • the first conductive pattern has an area of 40% to 60% of the upper surface area of the LED package substrate, the second conductive pattern, the upper surface area of the LED package substrate
  • the first connection pad has an area of 50% to 70% of the area of the bottom surface of the LED package substrate, and the second connection pad is 10% to the bottom area of the bottom surface of the LED package substrate. It is characterized by having an area of 30%.
  • the lighting array module further comprises a zener diode, the LED package substrate, the third conductive electrically connected to the bottom surface of the zener diode on the other side of the upper surface
  • the zener diode may further include a pattern, and an upper surface of the zener diode may be electrically connected to the first conductive pattern.
  • a side light emitting LED package including: a LED chip including a first conductive electrode, a second conductive electrode, and a main light emitting surface formed on an upper surface of the LED package;
  • the LED chip is mounted on an upper surface, and a first conductive pattern electrically connected to the first conductive electrode and a second conductive pattern electrically connected to the second conductive electrode are formed on an upper surface of the LED chip.
  • An LED package substrate having a first connection pad electrically connected to a first conductive pattern and a second connection pad electrically connected to the second conductive pattern, the bottom and side surfaces of which are exposed to the outside; And a fluorescent layer including an upper surface of the LED package substrate, an upper surface of the LED chip, and a side surface of the LED chip therein, having an area equal to that of the LED package substrate, and having an upper surface and a side surface exposed to the outside. Characterized in that.
  • the LED package substrate is characterized in that it has an area of 150% to 300% of the upper surface area of the LED chip.
  • the fluorescent layer is characterized in that it has a maximum height of 200% to 600% of the height of the LED chip.
  • the side emitting LED package according to the present invention the lighting array module including the same, and a method of manufacturing the side emitting LED package including no reflector are used in a lighting device or a backlight unit by using a wide light directing angle.
  • the number of LED packages can be reduced, or the height of the lighting device or the backlight unit can be reduced to provide a slim appearance.
  • an illumination array module including the same, and a manufacturing method thereof, the light of the light incident on the side of the LED package by forming the highest height of the fluorescent layer to 200% to 600% of the LED chip height It is possible to widen the light directing angle by increasing the transmission probability.
  • the first conductive pattern formed on one side of the LED package substrate further comprises an extension extending to the other side Process efficiency of the wire bonding process can be improved.
  • FIG. 1 shows a top view of a substrate in a first step of a method of manufacturing a lighting array according to an embodiment of the invention.
  • FIG. 2 is a view showing the top surface of the LED package substrate of the first step of the method of manufacturing a lighting array according to an embodiment of the present invention.
  • FIG. 3 is a process diagram showing the top surface of the substrate in the first step of the method of manufacturing an illumination array according to an embodiment of the invention.
  • FIG. 4 is a view showing the bottom surface of the LED package substrate of the first step of the method of manufacturing a lighting array according to an embodiment of the present invention.
  • FIG 5 is a view showing the top surface and the LED chip of the substrate of the second step of the method of manufacturing a lighting array according to an embodiment of the present invention.
  • FIG. 6 is a view showing the top surface and the LED chip of the LED package substrate of the second step of the method of manufacturing a lighting array according to an embodiment of the present invention.
  • FIG. 7 is a view showing the top surface and the LED chip of the substrate of the third step of the method of manufacturing a lighting array according to an embodiment of the present invention.
  • FIG. 9 is a view showing the top surface, the LED chip, and the fluorescent layer of the LED package substrate of the fourth step of the method for manufacturing an illumination array according to the embodiment of the present invention.
  • FIG. 10 is a view showing a top surface of a fluorescent layer in a fourth step of the method of manufacturing an illumination array according to an embodiment of the present invention.
  • FIG. 11 is a view showing a top surface, an LED chip, and a fluorescent layer of the LED package substrate of the fifth step of the lighting array manufacturing method according to the embodiment of the present invention.
  • FIG. 12 illustrates a longitudinal section of a side emitting LED package of a fifth step of the method of manufacturing a lighting array according to an embodiment of the present invention.
  • FIG. 13 illustrates a top and side emitting LED package of the lighting array substrate of the sixth step of the lighting array manufacturing method according to the embodiment of the present invention
  • FIG. 14 illustrates a longitudinal section of a side emitting LED package and a lighting array substrate of a sixth step of the lighting array manufacturing method according to an embodiment of the present invention
  • 15 is a process diagram showing the method of manufacturing the lighting array according to the embodiment of the present invention.
  • FIG. 16 illustrates a top surface of a substrate on which a plurality of LED package substrates are arranged in accordance with an embodiment of the present invention.
  • FIG. 17 illustrates a side view of a substrate on which a plurality of LED package substrates are arranged in accordance with an embodiment of the present invention.
  • FIG. 18 is a view showing a longitudinal section of a lighting apparatus using a conventional LED package.
  • 19 is a view showing a longitudinal section of the lighting apparatus using the side-emitting LED package according to an embodiment of the present invention.
  • 20 is a view showing a longitudinal section of the lighting apparatus using the side-emitting LED package according to another embodiment of the present invention.
  • Fig. 21 is a graph showing the change in light directing angle with increasing transparent layer thickness.
  • FIG. 15 shows a method of manufacturing a lighting array module according to the present invention
  • Figures 1 to 14 show the result produced in each step.
  • a first step S10 of forming a substrate including N LED package substrates 130 is performed as shown in FIG. 1 showing the top surface of the substrate and FIG. 3 showing the bottom surface of the substrate. Substrates are cut into respective LED package substrates 130 through a dicing process of the fifth step S5 described later.
  • the LED package substrate 130 may use a substrate that forms a constant electrical pattern, such as a conventional printed circuit board.
  • the LED package substrate 130 includes a first conductive pattern 131a and a second conductive pattern 131b on an upper surface thereof.
  • the first conductive pattern 131a may be larger than the second conductive pattern 131b so that the LED chip may be placed later.
  • the polarities of the LED chips 110 to which the respective conductive patterns 131a and 131b are connected may be easily distinguished in appearance.
  • FIG. 16 illustrates a top surface of a substrate on which patterns of a plurality of LED package substrates 130 are arrayed according to an embodiment of the present invention
  • FIG. 17 illustrates a bottom surface thereof.
  • the first conductive pattern 131a is formed on one side of the LED package substrate 130
  • the second conductive pattern 131b is formed on the other side facing the one side.
  • one side may be about 50% to 70% of an area from the left end of the LED package substrate 130
  • the other side may be about 10% from the right end of the LED package substrate 130. It may have an area of about 30%.
  • the first conductive pattern 131a may further include an extension part extending to the other side of the upper surface of the LED package substrate 130 in order to facilitate the electrode connection process in the third step S30 to be described later.
  • the first conductive pattern 131a is formed with an area of 40% to 60% of the area of the upper surface of the LED package substrate 130
  • the second conductive pattern 131b is formed of an area of the other side of the upper surface of the LED package substrate 130. It is preferable to form with an area of 20% or less.
  • the first step (S10) is the electrostatic discharge (ESD) electrostatic discharge (ESD) on the other side of the upper surface of the LED package substrate 130, Electric Fast Trasient (EFT) sparks generated from the switch, lighting surge (lighting surge) in the air It is preferable to further form a third conductive pattern (131c) for mounting the zener diode 140 used to prevent the inflow of).
  • ESD electrostatic discharge
  • EFT Electric Fast Trasient
  • the LED package substrate 130 exposes a first connection pad 132a and a second connection pad 132b on its bottom surface.
  • the connection pads 132a and 132b perform a function of connecting with the lighting array substrate 200 through conductive bonding means such as solder.
  • the first connection pad 132a is connected to the first conductive pattern 131a through, for example, a conductive via 133 penetrating the LED package substrate 130, and the second connection pad 132b is also connected to the second through the conductive via. It may be connected to the conductive pattern 131b.
  • the area of the first connection pad 132a is preferably larger than the area of the second connection pad 132b.
  • the polarity of the LED chip 110 to which the connection pads 132a and 132b are connected may be easily distinguished in appearance.
  • the first connection pad 132a is formed with 50% to 70% of the bottom area of the LED package substrate 130, and the second connection pad 132b is 10% to 30% of the bottom area of the LED package substrate 130. It is preferable to form in the area of%.
  • the LED chip 110 has a lateral side in which a main emission surface, a first conductivity type electrode of an n-type electrode or a p-type electrode, and a second conductivity type electrode of a p-type electrode or an n-type electrode are formed on an upper surface thereof.
  • the LED chip 110 is used.
  • the LED chip 110 is not necessarily mounted on the conductive patterns 131a and 131b because a conductive electrode is not formed on the bottom surface of the chip. However, when the LED chip 110 is mounted on a metal pattern, heat can be released by contact. As shown in FIG. 6, it is preferable to place 110 on the first conductive pattern 131a.
  • the present invention is not limited thereto, and the LED chip 110 including the first conductive electrode, the second conductive electrode, and the main light emitting surface formed on the upper surface may be used.
  • the first conductivity type electrode and the second conductivity type electrode may be formed on the same surface of the LED chip 110. Therefore, the LED chip 110 of the present invention is not limited to the above-described lateral chip, and the LED chip 110 having a flip chip structure may be used.
  • the zener diode in the second step S20, may be placed so that the third conductive pattern 131c and the bottom surface of the zener diode 140 are electrically connected to each other.
  • the first conductive pattern 131a of the LED package substrate 130 and the first conductive electrode exposed on the upper surface of the LED chip 110 are electrically connected to each other, and the LED A third step S30 of electrically connecting the second conductive pattern 131b of the package substrate 130 to the second conductive electrode exposed on the upper surface of the LED chip 110 is performed.
  • the conductive patterns 131a and 131b and the conductive electrodes may be electrically connected through a wire bonding process.
  • the third step S30 may be electrically connected to the top surface of the Zener diode 140 and the extension of the first conductive pattern 131a.
  • the present invention is not limited thereto, and the wire bonding process may be omitted when the LED chip 110 is not a lateral chip.
  • a fourth step S40 of forming the fluorescent layer 120 to include the top surface of the substrate and the side and top surfaces of the LED chip 110 is performed on the front surface of the substrate.
  • the fluorescent layer 120 may be formed of, for example, a transparent resin layer containing a fluorescent material, and the fourth step S40 may be performed by applying, printing, spraying, or depositing the fluorescent layer 120.
  • the fluorescent layer 120 may have a flat top surface, and the height of the fluorescent layer 120 may be constant, that is, the convex portion of the LED chip 110 may protrude convexly. It may be formed.
  • the height of the fluorescent layer 120 is related to the light directing angle of the side-emitting LED package 100 of the present invention.
  • FIG. 21 is a graph illustrating a change in light directivity angle according to a thickness of a transparent layer such as a fluorescent layer 120 or a light transmitting substrate attached to a light emitting surface of the LED chip 120. It can be seen that as the thickness of the transparent layer increases to a certain thickness, the light directing angle increases. This is because when the height of the fluorescent layer 120 increases, the probability that the light incident on the side surface inside the fluorescent layer 120 is greater than or equal to a threshold value increases, thereby increasing light emission through the side surface.
  • the fluorescent layer 120 it is preferable to form the fluorescent layer 120 at the highest height of 200% to 600% of the height of the LED chip 110. If the fluorescent layer 120 is formed at a height of 600% or more, the amount of light absorbed inside the fluorescent layer is increased rather than an increase in the light transmission probability to the side, thereby reducing the overall luminance of the side-emitting LED package 100. There is.
  • the first step (S10) it is preferable to form the LED package substrate 130 with an area of 150% to 300% of the upper surface area of the LED chip 110.
  • a fifth step S50 of cutting the substrates in units of the N LED package substrates 130 to form the N side emitting LED packages 100 is performed. Since a plurality of LED packages 100 are formed in a large amount through this dicing process, productivity can be increased compared to conventional LED packages in which LED chips, lead frames, and reflectors are individually assembled. Through the fifth step (S5) the side-emitting LED package 100 of the present invention is manufactured.
  • the first connection pad 132a and the second side of the side emitting LED package 100 are electrically connected to the first conductive pattern 131a of the side emitting LED package 100.
  • the plurality of side emitting LED packages 100 may be electrically connected to the connection electrodes of the lighting array substrate 200 by the second connection pads 132b electrically connected to the conductive patterns 131b.
  • the lighting array module according to the present invention is manufactured by performing a sixth step (S60) to be spaced apart from each other.
  • the side light emitting LED package 100 includes an LED chip 110, an LED package substrate 130, and a fluorescent layer 120 as shown in FIG. 12.
  • the LED chip 110 has a main emission surface, a first conductivity type electrode, and a second conductivity type electrode formed on an upper surface thereof.
  • the LED package substrate 130 has an LED chip 110 mounted on an upper surface thereof, and a first conductive pattern 131a electrically connected to the first conductive electrode and a second conductive electrode electrically connected to the second conductive electrode on the upper surface thereof.
  • a conductive pattern 131b is formed, and a first connection pad 132a electrically connected to the first conductive pattern 131a and a second connection pad 132b electrically connected to the second conductive pattern 131b are formed on a bottom surface thereof.
  • the bottom and side surfaces of the LED package substrate 130 are configured to be exposed to the outside.
  • the fluorescent layer 120 includes an upper surface of the LED package substrate 130, an upper surface of the LED chip 110, and a side surface of the LED chip 110, and has the same area as that of the LED package substrate 130.
  • the top and side surfaces are configured to be exposed to the outside.
  • the lighting array module includes the above-described side emitting LED package 100 and the lighting array substrate 200.
  • the illumination array substrate 200 may exemplify a substrate of a line light source illumination device or a surface light source illumination device or a substrate of a backlight unit.
  • the lighting array substrate 200 is electrically connected to the side emitting LED package 100 through the first connection pad 132a and the second connecting pad 132b and performs a function of mounting the side emitting LED package 100. .
  • the LED package substrate 130 is configured to have an area of 150% to 300% of the upper surface area of the LED chip 110, or the fluorescent layer 120 of the LED chip 110 It is preferable to configure to have a maximum height of 200% to 600% of the height.
  • the LED package substrate 130 has a first conductive pattern 131a disposed on one side of the upper surface, a second conductive pattern 131b positioned on the other side of the upper surface, and a first conductive pattern.
  • 131a includes an extension extending to the other side
  • the LED chip 110 is mounted on the first conductive pattern 131a
  • the first conductivity type electrode is connected to the extension by wire bonding.
  • the second conductive electrode is connected to the second conductive pattern 131b by wire bonding.
  • the first conductive pattern 131a has an area of 80% or more of the area of one side of the upper surface of the LED package substrate 130
  • the second conductive pattern 131b is formed of the other side of the upper surface of the LED package substrate 130. It has an area of 10% or more and 30% or less of the area
  • the first connection pad 132a has an area of 80% or more of the area of one side of the bottom surface of the LED package substrate 130
  • the second connection pad 132b It is preferable to have an area of 20% or more and 60% or less of the area of the other side of the bottom surface of the LED package substrate 130.
  • the illumination array module further includes a zener diode 140 as shown in FIG. 8 to block the effects of ESD, and the LED package substrate 130 has a zener diode 140 on the other side of the upper surface.
  • a third conductive pattern 131c is electrically connected to the bottom of the bottom surface.
  • the top surface of the zener diode 140 may be electrically connected to the first conductive pattern 131a by wire bonding.
  • FIGS. 18 to 20 are views for explaining the effect of the side-emitting LED package according to the present invention.
  • FIG. 18 shows a cross section of a conventional lighting array module using a conventional LED package 10 having a narrow light directivity angle a comprising a reflector
  • FIGS. 19 to 20 show a wide side emitting light according to the invention.
  • the cross section of the lighting array module of the present invention using the LED package 100 with the wide deflection angle b is shown.
  • the lighting array module of the present invention is conventional lighting.
  • the height h1 is the same as the height of the illumination array substrate 200 and the upper transparent cover 300 of the array module it is possible to secure a wider pitch (P2). Therefore, there is an effect that can reduce the number of side-emitting LED package 100 constituting the lighting array module.
  • the lighting array module of the present invention has a pitch P1 between the LED packages 10 of the conventional lighting array module, the height h2 of the lighting array substrate 200 and the upper transparent cover 300 is reduced. You can do it. Therefore, the height of the lighting array module can be reduced.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Led Device Packages (AREA)

Abstract

La présente invention concerne un boîtier DEL de type à vision latérale, un module de matrice d'éclairage l'utilisant, et leur procédé de fabrication. Le procédé de fabrication d'un module de matrice d'éclairage selon la présente invention comprend les étapes consistant à : former une couche fluorescente sur un côté avant d'un substrat, de sorte qu'un côté supérieur du substrat et un côté latéral et un côté supérieur d'une puce DEL peuvent être inclus en son sein ; et former N boîtiers DEL de type à vision latérale en découpant le substrat en unités de substrat des N boîtiers DEL, de sorte qu'un angle d'ouverture du faisceau peut être agrandi et que le nombre de boîtiers DEL d'un module de matrice d'éclairage peut être réduit.
PCT/KR2013/010587 2012-11-20 2013-11-20 Boîtier del de type à vision latérale, module de matrice d'éclairage l'incluant et leur procédé de fabrication Ceased WO2014081200A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20120132037A KR20140064582A (ko) 2012-11-20 2012-11-20 측면발광 led 패키지, 이를 포함하는 조명 어레이 모듈, 및 이의 제조방법
KR10-2012-0132037 2012-11-20

Publications (1)

Publication Number Publication Date
WO2014081200A1 true WO2014081200A1 (fr) 2014-05-30

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Country Status (2)

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KR (1) KR20140064582A (fr)
WO (1) WO2014081200A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108963060A (zh) * 2018-09-20 2018-12-07 东莞市春瑞电子科技有限公司 轻薄型led支架
CN114447178A (zh) * 2021-12-30 2022-05-06 广东晶科电子股份有限公司 一种led支架

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KR20060095271A (ko) * 2005-02-28 2006-08-31 삼성전기주식회사 파장변환형 발광 다이오드 패키지 제조방법
KR20080041013A (ko) * 2006-11-06 2008-05-09 주식회사 이츠웰 초박형 표면실장 ｌｅｄ 패키지 및 그 제조방법
KR100856233B1 (ko) * 2007-04-23 2008-09-03 삼성전기주식회사 고출력 발광장치 및 그 제조방법
KR20110087359A (ko) * 2010-01-26 2011-08-03 삼성엘이디 주식회사 발광소자 패키지
JP2011176265A (ja) * 2010-01-29 2011-09-08 Toshiba Corp Ｌｅｄパッケージの製造方法

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Publication number Priority date Publication date Assignee Title
KR20060095271A (ko) * 2005-02-28 2006-08-31 삼성전기주식회사 파장변환형 발광 다이오드 패키지 제조방법
KR20080041013A (ko) * 2006-11-06 2008-05-09 주식회사 이츠웰 초박형 표면실장 ｌｅｄ 패키지 및 그 제조방법
KR100856233B1 (ko) * 2007-04-23 2008-09-03 삼성전기주식회사 고출력 발광장치 및 그 제조방법
KR20110087359A (ko) * 2010-01-26 2011-08-03 삼성엘이디 주식회사 발광소자 패키지
JP2011176265A (ja) * 2010-01-29 2011-09-08 Toshiba Corp Ｌｅｄパッケージの製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108963060A (zh) * 2018-09-20 2018-12-07 东莞市春瑞电子科技有限公司 轻薄型led支架
CN108963060B (zh) * 2018-09-20 2024-05-17 东莞市春瑞电子科技有限公司 轻薄型led支架
CN114447178A (zh) * 2021-12-30 2022-05-06 广东晶科电子股份有限公司 一种led支架

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