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WO2014077783A1 - Dispositif de capture d'image et système de capture d'image - Google Patents

Dispositif de capture d'image et système de capture d'image Download PDF

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Publication number
WO2014077783A1
WO2014077783A1 PCT/SG2013/000489 SG2013000489W WO2014077783A1 WO 2014077783 A1 WO2014077783 A1 WO 2014077783A1 SG 2013000489 W SG2013000489 W SG 2013000489W WO 2014077783 A1 WO2014077783 A1 WO 2014077783A1
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WO
WIPO (PCT)
Prior art keywords
image capture
mode
capture device
dual
ion
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/SG2013/000489
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English (en)
Inventor
Mei Yan
Kiat Seng Yeo
Hao Yu
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Nanyang Technological University
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Nanyang Technological University
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Publication date
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Publication of WO2014077783A1 publication Critical patent/WO2014077783A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4148—Integrated circuits therefor, e.g. fabricated by CMOS processing
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/667—Camera operation mode switching, e.g. between still and video, sport and normal or high- and low-resolution modes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/42—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by switching between different modes of operation using different resolutions or aspect ratios, e.g. switching between interlaced and non-interlaced mode
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/702—SSIS architectures characterised by non-identical, non-equidistant or non-planar pixel layout
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Definitions

  • FIG. 2A shows a pixel element of an array of pixel elements coupled to an amplifier, a sampler, and a memory.
  • FIG. 5 shows a conventional ISFET sensor device.
  • FIG. 1 1 shows a photographic image and a pH map generated based on first and second signals generated by the array of dual-mode pixel elements shown in FIG. 6.
  • FIG. 12 shows a sensitivity of an image capture device 100 to ion concentration in an ion-carrying electrolyte.
  • Coupled and/or “electrically coupled” and/or “connected” and/or “electrically connected”, used herein to describe a feature being connected to at least one other implied feature, are not meant to mean that the feature and the at least one other implied feature must be directly coupled or connected together; intervening features may be provided between the feature and at least one other implied feature.
  • a CCD image sensor may have higher power consumption and slow processing speed (e.g. slow readout time) compared to a CMOS image sensor, a CCD image sensor may still have a market in security and medical section due at least in part to the CCD image sensor having high light sensitivity.
  • the image capture device 100 may be configured as a column-parallel image sensor.
  • each column of the array of pixel elements 102 may be coupled to a respective device and/or circuit element.
  • each pixel element of a respective column of the array of pixel elements 102 may be coupled to the same device and/or circuit element.
  • a spacing between adjacent pixel elements may determine the spatial resolution of an image (e.g. a photographic image) that may be generated from the signal (e.g. analog signal) generated by the array of pixel elements 102.
  • the pitch may be about 10 /mi, and thus the pixel size may be chosen as about lO/rni; e.g. to achieve good low-light sensitivity.
  • the signal (e.g. analog signal) from each column e.g. each of the 128-column outputs
  • the signal (e.g. analog signal) from each column may be amplified (e.g. by means of the amplifier 104), sampled (e.g. by means of sampler 106) and processed (e.g. by means of the processing circuit 112).
  • the signal (e.g. analog signal) from each column may go through the aforementioned processes simultaneously.
  • the selector 1 10 (e.g. column decoder) shown in FIG. 1 may select data stored in the memory 108 (e.g. SRAM), e.g. in serial.
  • the selector 110 may read out the selected data by means of a sense amplifier (SAMP) 204.
  • SAMP sense amplifier
  • the selector 110 may subsequently provide the selected and readout data to the processing circuit 112.
  • the single-frame based SR image reconstruction may be based on a single low- resolution image by assuming that the image may be spatially smooth and can be approximately reconstructed by polynomials such as bilinear functions. Since multi-frame SR approach may require large memory to process data, while the single-frame SR approach may process the data in real time, a single-frame SR approach may be implemented by the processing circuit 1 12. This may also allow for on-chip system-on-chip (SoC) integration.
  • SoC system-on-chip
  • FIG. 3A to FIG. 3D show a working principle of a single-frame super-resolution image reconstruction, which may be executed by the processing circuit 1 12.
  • the single-frame SR based image reconstruction may be designed on chip through the standard application-specific integrated circuit (ASIC) synthesis flow.
  • ASIC application-specific integrated circuit
  • the signal (amplified and sampled signal) from the array of pixel elements 102 may be provided to the processing circuit 112 (e.g. from memory 108, by means of selector 110) in serial into an input data buffer.
  • the processing circuit 112 may include the input data buffer.
  • the 128 pixel output data from a row e.g. first row, e.g. represented by pixels Nl, N2 ...N128, may be transferred to the input data buffer 301 along with at least one pixel from the next row (e.g. first 2 pixels of the second row, e.g. represented by pixels (N+l)l, (N+l)2).
  • single-frame SR based image reconstruction based on one row of an image
  • it can also applied to multiple rows to achieve better spatial information in a vertical direction.
  • This may be referred to as a single- frame SR multi-row implementation.
  • a single-frame SR multi-row implementation may not limited to column-parallel image sensor architecture, it can also apply to any other sensor architecture, such as global-readout architecture. W
  • FIG. 4A to FIG. 4C show photographic images generated by the image capture device 100.
  • FIG. 4A shows an image 400 of colloid particle flowing in a microfluidic device.
  • the particle may have a diameter 15.7 ⁇ similar to the size of a cancer cell.
  • the trajectory 402 of the particle may be tracked by means of the generating high-speed and high-sensitivity photographic images over time.
  • FIG. 4B shows an original 8x8 image of a particle and FIG. 4C shows a processed 32x32 image of the image shown in FIG. 4B.
  • the image in FIG. 4C was generated by the above-described single-frame SR based image reconstruction (e.g. shown in FIG. 3A to FIG. 3D).
  • the image after super-resolution processing shows more details with 4X improved resolution of the particle.
  • Single-frame SR based image reconstruction described above may be a promising alternative to conventional multi-frame super-resolution approaches which may require multiple frames of memory and which may not be feasible for on-chip implementation.
  • Single-frame SR based image reconstruction may provide high resolution image through reconstruction using polynomials such as bilinear functions based on multiple rows instead of multiple frames.
  • Single-frame SR based image reconstruction may be especially important to certain applications where limited memory and computational resources are required.
  • CMOS image sensor devices may include a column-parallel image sensor chip with small pixel and a FPGA-based super-resolution algorithm using large pixels. Table 1 shows a comparison between these existing CMOS image sensor devices. As shown in Table 1, column-parallel image sensor can achieve high speed benefit from the high speed column- parallel readout architecture, but small pixels show poor light sensitivity. As shown in Table 1 , a CMOS image sensor device with large pixel employed with FPGA-based super-resolution can improve both sensitivity and spatial resolution, however the readout speed is limited by the off- chip FPGA imaging analysis. In contrast, the image capture device 100, which may include, or may be, a column-parallel super-resolution image sensor device, can achieve high sensitivity, high speed and high spatial resolution.
  • devices that may be configured to determine (e.g. measure) a concentration of ions with high temporal resolution and high sensitivity, e.g. by means of generating a voltage and/or a current that may vary with the concentration of ions.
  • a device may generate a voltage and/or a current that may be proportional (e.g. linearly proportional) to the concentration of ions, e.g. in an ion- carrying solution (e.g. an ion-carrying electrolyte). Therefore, the concentration of ions may be determined (e.g. measured) based on the voltage and/or current generated by the device.
  • Determining (e.g. measuring) a concentration of ions may be useful in various industries and/or applications.
  • testing the safety of samples may include, or may consist of, determining (e.g. measuring) a concentration of ions, e.g. by means of devices such as pH detectors and ion- channel detectors.
  • devices such as pH detectors and ion- channel detectors.
  • a concentration of ions in a sample being tested may depend, at least in part, on ion channels of the sample.
  • ion channels e.g. for calcium, chlorine, and/or other ions
  • Ion channels may be tested (e.g. by means of measuring a concentration of ions in an ion-carrying electrolyte), and may be primary test targets (i.e. frequently tested).
  • Ion channels may be primary test targets due, at least in part, to the fact that ion channels play a crucial role in the human central nervous system and/or in controlling the heart and brain. Chemicals contained in seafood, water, milk, or juice may regulate ion channels and may reveal a potential link with human diseases, including cancer. In addition, some drugs can show serious side-effects via ion W
  • a fluorescence measuringment may be used for measuring a concentration of ions in an ion-carrying electrolyte.
  • a particular dye (which may be linked to a specified ion) may be introduced at each measurement.
  • the dye may be ion-concentration dependent or membrane-potential dependent. Since the dye is either ion-concentration dependent or membrane-potential dependent, the fluorescence measurement may change when dyes are loaded into the cell membrane through the ion channels. Therefore, ion flux information can be obtained.
  • a fluorescence measurement (e.g. a fluorescence assay) may be a popular preliminary screening method because it may be easy to set up and may achieve high throughput.
  • the data provided may have false negatives and/or false positive information due to an indirect readout in this approach, e.g. since the fluorescence measurement may be an indirect measure of membrane-potential dependent or ion-concentration dependent fluorescent signal changes, rather than a direct measure of changes in ionic current.
  • cell activity e.g. live-time cell activity
  • the ISFET sensor device 500 may, for example, be a conventional ISFET sensor device that may be used for ion channel characterization, ion channel screening and/or measuring a concentration of ions in an ion-carrying electrolyte, as described above.
  • the ISFET sensor device 500 may include a plurality of transistors PI, P2, P3, Nl . Only four circuit transistors PI, P2, P3, Nl are shown as an example. However, the number of transistors may be less than four (e.g. one, two, three) or may be greater than four and may, for example, be five, six, seven, eight, nine, or tens of transistors.
  • the first mode of the array of dual-mode pixel elements 600 may be referred to as an image mode of the array of dual-mode pixel elements 600.
  • the array of dual- mode pixel elements 600 may be configured to generate a photographic image of the ion- carrying electrolyte (e.g. of an object in the ion-carrying electrolyte).
  • FIG. 7 shows a schematic view 700 of a dual-mode pixel element of the array of dual -mode pixel elements 600 shown in FIG. 6.
  • FIG. 8 shows a cross-sectional view 800 a dual-mode pixel element of the array of dual-mode pixel elements 600 shown in FIG. 6.
  • the dual-mode pixel element may be configured to function as an ISFET sensor device (e.g. as shown in the schematic view 708).
  • the readout device M2, M3, may include a sensing element M2 configured to generate a voltage, which may be correlated to the ion concentration of the ion-carrying electrolyte.
  • the readout device M2, M3 may include a plurality of transistors, and the sensing element M2 may be a transistor of the plurality of transistors, whose gate (e.g. poly-gate) 802 shown in FIG. 8 may be connected to a metal and/or passivation layer 804 (e.g.
  • a change in the voltage (e.g. V T ) generated by the sensing element M2 of the readout device M2, M3 may lead to a change in an output voltage Vout of a readout element M3 of the readout device M2, M3.
  • V T the voltage
  • Vout the ion concentration
  • the second signal representing a measurement of a concentration of ions in the ion-carrying electrolyte may include, or may be, the signal Vout.
  • the image capture device 100 including the array of dual-mode pixel elements 600 may be fabricated in an 0.18 ⁇ CMOS image sensor process with a total area of 2.5x5 mm 2 .
  • An area of the image capture device 100 that may be used for optical sensing (e.g. when the array of dual-mode pixels elements 600 operate in the first mode) may be about 20. ⁇ 2 with 18.1% fill factor, and the chemical sensing area (e.g. when the array of dual-mode pixels elements 600 operate in the second mode) may be about 22.3 Ltm with 20.1% fill factor.
  • the power may be about 32mA at 3.3V supply voltage.
  • FIG. 1 1 shows a photographic image 1 102 and a pH map 1 104 generated based on the first and second signals, respectively, generated by the array of dual-mode pixel elements 600.
  • the image capture device e.g. chip
  • the image capture device may be able to capture a photographic image 1102 of an ion-carrying electrolyte, e.g. micro-beads in an ion-carrying electrolyte with diameters of 6um, 15um and 23um, e.g. by contact imaging.
  • a distance between the ion-carrying electrolyte e.g.
  • the ion camera may be a unique real-time high-sensitive and high-resolution ion detector based on the readout circuit of existing imager camera.
  • it can be integrated with general imager sensor product on the market, for example, Aptina MT9P031 (5M digital image sensor), Ominivision OV2640 (2M camera chip), and readout architecture can be either global and column-parallel.
  • the dual-mode pixel element 1400 may be similar to a CMOS image sensor device (e.g. a 4-transistor (4T) pixel).
  • CMOS image sensor device e.g. a 4-transistor (4T) pixel.
  • the presence of ions in an ion-carrying electrolyte may cause a threshold voltage Vt change, which converts the ion concentration information into charge.
  • the charge may be integrated at the node FD and may be read out through in-pixel amplifier 104 (e.g. source follower) and send off-pixel through "output" node.
  • FIG. 14 shows a comparison of sensitivities of the dual-mode pixel element shown in FIG. 13 and the conventional ISFET sensor device shown in FIG. 5.
  • the proposed image capture device including the array of dual-mode pixel elements may allow for fast detection by integrating existing well-developed high-speed high-precision CMOS image sensor (digital camera) readout circuit directly on sensor array chip. Instead of reading through a single off-chip, a shared amplifier 104 and analog-to-digital converter 106 may be used.
  • the proposed image capture device including the array of dual-mode pixel elements may include dedicated column-wise amplifiers and ADCs on-chip, which improve the speed at least 100X.
  • the proposed image capture device including the array of dual-mode pixel elements may convert the current into charge domain and may read the charge out through CMOS image sensor readout method. This charge domain measurement can improve the sensitivity by 20X. On-chip low noise readout circuit design can further increase sensitivity by improving the signal-to-noise ratio.
  • the conventional ISFET sensor device may have a small array size due to the limitation of readout circuit.
  • the proposed image capture device including the array of dual-mode pixel elements solution can support at least an 96x96 array, and hence the spatial resolution can be extended with 100X improvement.
  • the proposed image capture device including the array of dual-mode pixel elements can detect ion distribution and concentration in an ion-carrying electrolyte and movement in real-time.
  • the proposed image capture device including the array of dual-mode pixel elements may be capable to fast detect variety types of ions with a wide range of applications such as food and drug safety tests.
  • the image capture system 1700 can provide a solution to resolve the aforementioned technical challenges for both food and drug safety.
  • the cavity 1706 may hold a sample, e.g. a cell, e.g. brain cell or nerve cell.
  • a sample e.g. a cell, e.g. brain cell or nerve cell.
  • the ion density of the ion-carrying electrolyte may change accordingly by in-flux or out-flux through cell ion channels in the sample. This can be measured and observed by the image capture device disposed below the cavity 1706 in a real-time fashion as well.
  • Ion channels may be proteins on the membrane of cells which allow the flow of ions into the cell. They are highly interesting biophysical entities that play an incredibly subtle role inter- and intra-cellular communication. Regulated and selective transport of ions mediated by ion channels underpins numerous fundamental physiological processes. This includes electrical signaling in the heart and the nervous system, fluid secretion in the lung, and a variety of other key processes such as hormone secretion, the immune response, and tumor cell proliferation. Therefore, ion channels are crucial for the vitality of all living organisms and hence become the important drug targets. Despite being such a rich source of drug targets with attention from the pharmaceutical industry, ion channels are traditionally difficult to characterize or screen for both drug discovery and safety testing.
  • an accurate pre-screening tool such as the proposed image capture device including the array of dual-mode pixel elements can save million dollars per year for drug companies.
  • an image capture device may include: an array of dual-mode pixel elements configured to operate in a first mode and a second mode, wherein, in the first mode, each dual-mode pixel element generates a first signal representing a pixel value of a photographic image of an ion-carrying electrolyte, and wherein, in the second mode, each dual-mode pixel element generates a second signal representing a measurement of a concentration of ions in the ion- carrying electrolyte.
  • the amplifier may include, or may consist of, at least one of an operational amplifier, a transistor a resistor, a capacitor, and a diode.
  • a gain of the amplifier may vary with a lighting condition to which each dual-mode pixel element is exposed to.
  • the image capture device may further include a sampler configured to sample the first and second signals.
  • the sampler may be configured to sample the first and second signals subsequent to an amplification of the first and second signals.
  • the sampler may include, or may be, an analog-to-digital convertor.
  • the sampler may be configured to perform correlated double sampling of the first and second signals relative to a reference signal.
  • the image capture device may further include a memory configured to store the first and second signals.
  • the memory may be configured to store the first and second signals subsequent to a sampling of the first and second signals.
  • the image capture device may further include a selector configured to select at least one of the first and second signals.
  • the selector may be further configured to readout at least one of the selected first and second signals.
  • the selector may be further configured to provide at least one of the selected first and second signals to a processing circuit configured to process the first and second signals.
  • the image capture device may further include a processing circuit configured to increase a spatial resolution of a photographic image whose pixel value is represented by the first signal and to increase a spatial resolution of a second image whose pixel value is represented by the second signal.
  • Each dual-mode pixel element may include, or consist of, a photo-diode, which in the first mode, is configured to convert light energy into electrical charge.
  • Each dual-mode pixel element may further include a switch, which in the first mode, is configured to provide the electrical charge to a storage device.
  • Each dual-mode pixel element may include a storage device, which in the first mode, is configured to store an electrical charge.
  • the storage device may include, or may be, a floating diffusion node.
  • the storage device may be configured to generate a first voltage from the electrical charge, wherein the first voltage is readout by a readout device as the first signal.
  • the readout device may include, or may consist of, a sensing element and a readout element.
  • the sensing element in the second mode, may be configured to generate a second voltage which is correlated to the concentration of ions in the ion-carrying electrolyte.
  • the second voltage may be configured to generate an output voltage at an output of the readout element, wherein the second signal may include, or may be, the output voltage.
  • an image capture system may include: an image capture device, including: an array of dual-mode pixel elements configured to operate in a first mode and a second mode, wherein, in the first mode, each dual-mode pixel element generates a first signal representing a pixel value of a photographic image of an ion-carrying electrolyte, and wherein, in the second mode, each dual-mode pixel element generates a second signal representing a measurement of a concentration of ions in the ion-carrying electrolyte; and a container configured to hold the ion- carryingdectrolyte.
  • the image capture system may further include a cavity configured to contain sample, wherein the sample changes the concentration of ions in the ion-carrying electrolyte.
  • the image capture device of the image capture system may further include an amplifier coupled to the array of dual-mode pixel elements, wherein the amplifier is configured to amplify the first and second signals of each dual-mode pixel element.
  • the image capture device of the image capture system may further include a sampler configured to sample the first and second signals.
  • the image capture device of the image capture system may further include a memory configured to store the first and second signals.
  • the selector may be configured to select the first and second signals stored in a memory. [00185] The selector may be further configured to readout at least one of the selected first and second signals.
  • the image capture device of the image capture system may further include a processing circuit configured to increase a spatial resolution of a photographic image whose pixel value is represented by the first signal and to increase a spatial resolution of a second image whose pixel value is represented by the second signal.

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Abstract

L'invention concerne un dispositif de capture d'image, qui peut comprendre : un réseau d'éléments pixels bimodes conçus pour fonctionner dans un premier mode et un second mode, dans lesquels, dans le premier mode, chaque élément pixel bimode émet un premier signal représentant une valeur de pixel d'une image photographique d'un électrolyte portant des ions et dans lesquels dans le second mode, chaque élément pixel bimode émet un second signal représentant une mesure d'une concentration d'ions dans l'électrolyte portant des ions.
PCT/SG2013/000489 2012-11-15 2013-11-15 Dispositif de capture d'image et système de capture d'image Ceased WO2014077783A1 (fr)

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US201261727047P 2012-11-15 2012-11-15
US201261727043P 2012-11-15 2012-11-15
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