WO2014073237A1 - Solid-state lighting device - Google Patents

Abstract

This solid-state lighting device has a light source section, which has a semiconductor light emitting element, and which outputs excitation light, a light guide section, a wavelength conversion layer, and an irradiation region moving means. The light guide section has a light input section into which the excitation light is introduced, and an irradiation section from which the excitation light is outputted. The wavelength conversion layer has: a first region, which absorbs the excitation light, and which outputs first wavelength conversion light having a wavelength longer than that of the excitation light; and a second region, which absorbs the excitation light, and which outputs second wavelength conversion light having a wavelength longer than that of the excitation light. The emission spectrum of the first wavelength conversion light and that of the second wavelength conversion light are different from each other. The ratio of the first wavelength conversion light to the light output of the excitation light outputted through the first region, and the ratio of the light output of the second wavelength conversion light to the light output of the excitation light outputted through the second region are different from each other. The irradiation region moving means changes an irradiation position of the excitation light outputted from the irradiation section, said position being on the surface of the wavelength conversion layer.

Description

Solid state lighting device

Embodiments of the present invention relate to a solid state lighting device.

White solid-state lighting (SSL) devices using solid-state light-emitting elements are mainly LEDs (Light Emitting Diodes).

In this case, if the white light emitting part having the phosphor is provided so as to cover the LED (Light Emitting Diode) chip, a substrate for heat dissipation and power feeding of the LED chip is required. If the white light emitting unit is composed only of an optical system, heat generation is small, the size and weight are reduced, and the design flexibility of the lighting device can be increased.

For this purpose, for example, the output from a high-intensity solid-state light emitting device in the blue-violet to blue wavelength range is efficiently coupled to a light guide or the like, and irradiated to a wavelength conversion layer such as a phosphor separated from the solid light-emitting device. A structure that obtains white light emission may be used.

In order to adjust the color temperature of the emission color, it is only necessary to change the emission intensity ratio of a plurality of white LEDs having different color temperatures. However, it is necessary to increase the number of white LEDs. In addition, when trying to obtain a desired color temperature by mixing LEDs of RGB colors, the power consumption increases because the light emission efficiency is lower than that of the white LED. *

Special table 2011-501364 gazette International Publication No. 2007/099827

Provide a solid-state lighting device that can easily dissipate heat and adjust chromaticity.

The solid-state lighting device of the embodiment includes a semiconductor light emitting element, a light source unit that emits excitation light, an incident unit that introduces the excitation light, and an irradiation unit that emits the excitation light introduced into the incident unit A first wavelength having a wavelength that is longer than the wavelength of the excitation light by absorbing the excitation light. A first region that emits converted light; and a second region that absorbs the excitation light and emits second wavelength converted light having a wavelength longer than the wavelength of the excitation light, and the first wavelength converted light. And the second wavelength converted light have different emission spectra, or the ratio of the optical output of the first wavelength converted light to the optical output of the excitation light emitted through the first region and the second region The second wave with respect to the optical output of the excitation light emitted through The ratio of the light output of the converted light are different, it comprises a wavelength conversion layer, and a irradiation area moving means for changing an irradiation position on the surface of the wavelength conversion layer of the excitation light emitted from the irradiation unit.

A solid state lighting device that can easily dissipate heat and adjust chromaticity is provided.

FIG. 1A is a schematic perspective view of the solid-state lighting device according to the first embodiment, and FIG. 1B is a schematic cross-sectional view along the line AA. 2A is a schematic plan view showing the structure of the wavelength conversion layer, FIG. 2B is a schematic cross-sectional view along the line BB, and FIG. 2C is a schematic view showing a modification of the wavelength conversion layer. FIG. 2D is a schematic cross-sectional view along the line BB. FIG. 3A is a schematic plan view of the first irradiation position of the second embodiment, FIG. 3B is a schematic cross-sectional view along the line CC, and FIG. 3C is the second irradiation position. 3D is a schematic sectional view taken along the line CC, FIG. 3E is a schematic plan view of the third irradiation position, and FIG. 3F is a line taken along the line CC. It is the model sectional drawing. FIG. 4A is a schematic perspective view of the solid-state lighting device according to the third embodiment, and FIG. 4B is a schematic cross-sectional view taken along the line CC. 5A is a conical irradiation unit, FIG. 5B is a quadrangular pyramid irradiation unit, FIG. 5C is a triangular pyramid irradiation unit, FIG. 5D is an end polishing fiber irradiation unit, and FIG. FIG. 5E is a schematic perspective view of the irradiation section of the fiber array, and FIG. 5F is a schematic perspective view of the irradiation section of the multilayer fiber array. FIG. 6A is a schematic perspective view of a light emitting unit, and FIG. 6B is a schematic perspective view of a spotlight which is an application example thereof. FIG. 7A is a schematic perspective view of a solid-state lighting device according to the fourth embodiment, and FIG. 7B is a schematic cross-sectional view taken along the line DD. FIG. 8A is a schematic perspective view of a solid state lighting device according to the fifth embodiment, and FIG. 8B is a schematic cross-sectional view taken along the line DD. FIG. 9A is a partially cut schematic perspective view of a solid state lighting device according to the sixth embodiment, and FIG. 9B is a partially cut schematic cross-sectional view. FIG. 10A is a partially cut schematic perspective view of the solid state lighting device according to the seventh embodiment, FIG. 10B is a partially cut schematic cross sectional view, and FIG. 10C is a schematic cross sectional view of a modification. . FIG. 11A is a schematic perspective view of a light conversion unit constituting the solid-state lighting device according to the eighth embodiment, FIG. 11B is a schematic view showing the configuration of the solid-state lighting device, and FIG. It is a model perspective view of a light body. 12A is a schematic cross-sectional view of the light conversion unit of the solid state lighting device of the eighth embodiment, FIG. 12B is a schematic cross-sectional view in the vicinity of the transparent tube, and FIG. 12C is a schematic perspective view of the application example. Figure. FIG. 13A is a schematic perspective view of a solid-state lighting device according to the ninth embodiment, and FIG. 13B is a schematic cross-sectional view along AA. FIG. 14A is a schematic perspective view for explaining the operation of the functional element in the OFF state, FIG. 14B is a schematic sectional view taken along the line AA, and FIG. 14C is the operation of the functional element in the on state. FIG. 14D is a schematic cross-sectional view taken along the line AA. FIG. 15A is a schematic perspective view of a solid-state lighting device according to the tenth embodiment, and FIG. 15B is a schematic cross-sectional view along the line AA. FIG. 16A is a schematic perspective view for explaining the operation of the tenth embodiment, FIG. 16B is a schematic perspective view of the irradiation state of the first region, and FIG. 16C is a irradiation state of the second region. FIG. 16D is a schematic perspective view of the irradiation state of the third region. It is a model perspective view of 11th Embodiment. FIG. 18A is a schematic cross-sectional view for explaining the action in the first state of the solid state lighting device of the eleventh embodiment, and FIG. 18B is a schematic cross-sectional view for explaining the action in the second state.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 1A is a schematic perspective view of the solid-state lighting device according to the first embodiment, and FIG. 1B is a schematic cross-sectional view along the line AA.
The solid-state lighting device includes the light source unit 10, the wavelength conversion layer 54, the light guide unit 20, and the irradiation region moving unit 24.

The light source unit 10 is configured to emit the excitation light G1, and has at least a semiconductor light emitting element or the like as a means for generating the excitation light G1. The semiconductor light emitting element can be, for example, a laser element or a light emitting diode that emits excitation light (light beam) G1 having a wavelength range of 400 to 490 nm. The wavelength range of the excitation light G <b> 1 only needs to be absorbed by the wavelength conversion layer 54 described later and emit wavelength conversion light, and can be set to ultraviolet light with a wavelength of 400 nm or less, or with a wavelength of 500 nm or more, in combination with the wavelength conversion layer 54.

The light source unit 10 may be configured to irradiate light from the semiconductor light emitting element directly as excitation light, or may be configured to indirectly irradiate via an optical fiber, an optical lens, a reflecting member, or the like. Further, a configuration in which a plurality of semiconductor light emitting elements are provided to increase the output of the excitation light G1 from the light source unit 10 may be used. Moreover, when the light guide part 20 mentioned later consists of two or more light guides, the structure which branches the excitation light G1 from a semiconductor light-emitting element to a plurality of light guides, and guides the excitation light G1 may be sufficient. If the semiconductor light emitting element is a laser element, the beam divergence angle can be narrowed, so that the excitation light can be efficiently introduced into the incident part 20a of the light guide part 20 and efficiently guided to the irradiation part 20b.

The light guide unit 20 guides the excitation light G1 from the light source unit 10 to a wavelength conversion layer 54 described later, and is configured by, for example, an optical fiber or a light guide. The light guide unit 20 includes an incident unit 20a on which one end is incident with excitation light, and an irradiation unit 20b on which the other end irradiates the excitation light G1 toward the wavelength conversion layer. The irradiation unit 20b has, for example, a shape obtained by processing the tip of an optical fiber or a light guide into a taper shape, and controls the reflection direction of the excitation light G1 guided through the light guide unit 20 so as to be in an arbitrary irradiation direction. Excitation light G1 is irradiated. In the configuration of FIG. 1B, there are four irradiation areas using an optical fiber array described later. The two irradiation regions irradiate the excitation light in the first direction, and the remaining two irradiation regions irradiate the excitation light in a second direction 180 degrees different from the first direction. The light guide unit 20 may be a spatial propagation optical path configured by a mirror, a lens, or the like.

The wavelength conversion layer 54 absorbs the excitation light G1 and emits wavelength conversion light having an emission spectrum including a wavelength longer than the wavelength of the excitation light G1. The wavelength conversion layer 54 is made of, for example, a nitride-based phosphor such as (Ca, Sr) ₂ Si ₅ N ₈ : Eu, (Ca, Sr) AlSiN ₃ : Eu, or Cax (Si, Al) ₁₂ (O, N ) ₁₆ : Eu, (Si, Al) ₆ (O, N) ₈ : Eu, BaSi ₂ O ₂ N ₂ : Eu, BaSi ₂ O ₂ N ₂ : Eu and other oxynitride phosphors, Lu ₃ Al ₅ O ₁₂ : Ce, (Y, Gd) ₃ (Al, Ga) ₅ O ₁₂ : Ce, (Sr, Ba) ₂ SiO ₄ : Eu, Ca ₃ Sc ₂ Si ₃ O ₁₂ : Ce, Sr ₄ Al ₁₄ O ₂₅ : Eu or other oxide-based phosphors, (Ca, Sr) S: Eu, CaGa ₂ S ₄ : Eu, ZnS: Cu, Al or other sulfide-based phosphors, etc., or at least one kind A phosphor mixed as described above can be used.

The wavelength conversion layer 54 has, for example, at least two regions that emit at least two wavelength-converted lights having different emission spectra of the wavelength-converted light. In FIG. 1, the wavelength conversion layer 54 includes a first region 54a, a second region 54b, a third region 54c, a fourth region 54d, a fifth region 54e, and a sixth region 54f.

The incident portion 20a of the light guide portion 20 is provided outside the region surrounded by the wavelength conversion layers 54a to 54f. The irradiation unit 20b is provided so as to be surrounded by the wavelength conversion layers 54a to 54f, and emits the excitation light G1 from the light source unit 10 guided. The irradiation region moving unit 24 moves the position of the irradiation region of the excitation light G1 emitted from the irradiation unit 20b toward the wavelength conversion layer 54. Thus, above the wavelength conversion layer 54, the wavelength conversion light from the wavelength conversion layer 54 in the region irradiated with the excitation light G1 and a part of the excitation light G1 reflected by the wavelength conversion layer 54 are mixed. The illuminated illumination light GT can be obtained.

For example, it is assumed that the first region 54a and the fourth region 54d on the opposite side emit wavelength-converted light having a first emission spectrum that is substantially the same. In addition, the second region 54b and the fifth region 54e on the opposite side emit wavelength converted light having a second emission spectrum different from the first emission spectrum. Furthermore, it is assumed that the third region 54c and the sixth region 54f on the opposite side emit wavelength converted light having a third emission spectrum different from the first and second emission spectra.

The light guide unit 20 is rotated with the axial direction of the light guide unit 20 as the central axis 30c, and the irradiation position of the excitation light G1 from the irradiation unit 20b is set to the position of the first region 54a and the fourth region 54d, or the first The chromaticity of the illumination light GT can be changed by switching to the position of the second area 54b and the fourth area 54e or the position of the third area 54c and the sixth area 54e.

For example, blue-violet to blue laser light is used as the excitation light G1 of the light source unit 10, the first emission spectrum is a blue wavelength conversion layer, the second emission spectrum is a green wavelength conversion layer, and a third wavelength conversion layer. By selecting the wavelength conversion layer whose red light emission spectrum is red, the color can be changed to blue, green, and red. Also, by providing a scattering layer that reflects / reflects blue-violet to blue laser light instead of the blue wavelength conversion layer, blue light can be generated by the scattering layer, so that the color can be changed in the same manner.

As another modification example regarding the arrangement of the wavelength conversion layer, a configuration in which a wavelength conversion layer in which a plurality of phosphors having different emission colors are mixed is used and the mixing ratio is changed and arranged in each region may be used. For example, a blue-violet to blue laser beam is used as the excitation light G1 of the light source unit 10, and the wavelength conversion layer in which the first emission spectrum is adjusted to the blending ratio that becomes the first color temperature, the second emission By selecting the wavelength conversion layer whose spectrum is adjusted to the mixing ratio of the second color temperature and the wavelength conversion layer whose third emission spectrum is adjusted to the mixing ratio of the third color temperature, the illumination light GT is selected. The color temperature can be varied.

Further, for example, the first region 54a may include a red wavelength conversion layer, and the fourth region 54d on the opposite side may include a green wavelength conversion layer. When the position of the irradiation region is moved to 60 degrees and 120 degrees, respectively, red and green wavelength converted lights having different emission spectra are emitted, and chromaticity and color temperature can be adjusted. Similarly, light bulb colors and white light having different color temperatures can be obtained.

The ratio of the light output of the wavelength converted light to the light output of the excitation light G1 reflected from the wavelength conversion layer 54 without being absorbed by the wavelength conversion layer 54 in the excitation light G1 irradiated to the wavelength conversion layer 54. Variable colors are possible by changing the color.

For example, blue-violet to blue laser light is used as the excitation light G1 of the light source unit 10, and a yellow phosphor having the same spectrum is applied as the wavelength conversion layer 54 to each of the regions 54a to 54f. It can be set as the structure arrange | positioned so that a film thickness may differ. In the region where the wavelength conversion layer 54 is thickly applied, the absorption of excitation light can be increased, and yellow wavelength conversion light can be increased. As a result, since the excitation light that is not absorbed by the wavelength conversion layer 54 decreases, the light output of the blue excitation light reflected by the wavelength conversion layer 54 decreases. As a result, the illumination light GT can be a light emission color in which yellow light emission is dominant.

On the other hand, in the region where the film thickness of the wavelength conversion layer 54 is thinly applied, the absorption of the excitation light becomes small and the yellow wavelength conversion light decreases. As a result, since the excitation light that is not absorbed by the wavelength conversion layer 54 increases, the light output of the blue excitation light reflected by the wavelength conversion layer 54 increases. As a result, the emitted light GT can be a light emission color in which blue is dominant as compared with a region where the film thickness is thick. In this way, for example, emitted light with different colors can be obtained. The first region to the sixth region of the wavelength conversion layer 54 can be divided by, for example, 60 degrees in plan view. Note that the number of divisions is not limited to six.

The solid state lighting device may further include a heat conducting unit 30 having a high heat conducting material such as metal or ceramic. The heat conducting unit 30 has a recess 30b that is recessed from the first surface 30a. The recess 30b has an inner wall 30d that is provided around the central axis 30c and widens toward the first surface 30a. The wavelength conversion layer 54 is provided such that the plurality of regions (54a, 54b, etc.) are juxtaposed at different positions along the circumferential direction of the central axis 30c.

The excitation light can irradiate different regions of the wavelength conversion layer 54 by rotating at least one of the heat conduction unit 30 and the irradiation unit 20b.

Moreover, the cover part 57 can be provided in the upper part of the recessed part 30b. The cover part 57 can include a light diffusion layer. When the cover portion 57 includes a light diffusion layer, the excitation light that is multiply reflected without being absorbed by the wavelength conversion layer provided on the inner wall 30d of the recess 30b can be scattered and emitted. In the case where the excitation light is laser light, the laser light can be converted into incoherent light to improve safety for human eyes. Note that FIG. 1A does not illustrate the cover portion 57.

Moreover, the cover part 57 and the wavelength conversion layer can be included. For example, it is assumed that the cover portion 57 includes a green wavelength conversion layer, and a red wavelength conversion layer and a green wavelength conversion layer are provided on the inner wall 30d of the recess 30b. The green wavelength conversion layer of the cover part 57 transmits red light having a wavelength longer than that of green light with little absorption. When absorption of excitation light decreases due to an increase in the temperature of the wavelength conversion layer, the blue component of reflected light increases, and the illumination light GT becomes bluish. In this case, the emission spectrum can be changed by moving the excitation light irradiation region to reduce the blue component and bring it closer to the desired color temperature. Further, by providing the cover portion 57, the heat generation region of the wavelength conversion layer can be dispersed.

The irradiation region moving unit 24 is a unit that changes the relative position between the irradiation unit 20b and the wavelength conversion layer 54, has a motor, a gear, and the like, and is an automatic moving unit that moves mechanically by an electromagnetic method or an electronic method, Or. These can be simplified, and it can be set as the manual movement apparatus etc. which are moved manually by the operator.

2A is a schematic plan view showing the structure of the wavelength conversion layer, FIG. 2B is a schematic cross-sectional view taken along line BB in FIG. 2A, and FIG. 2C is the wavelength conversion layer. FIG. 2D is a schematic cross-sectional view taken along the line BB in FIG. 2C.
2A and 2B, the wavelength conversion layer 54 can be applied to one surface of a holding plate 50 that holds or fixes the wavelength conversion layer 54. The holding plate 50 can be an insulating plate such as ceramics such as YAG or alumina. As the ceramics, transparent ceramics that transmit excitation light and light from the wavelength conversion layer 54, reflective ceramics that reflect these lights, and the like can be used. The holding plate 50 can also be a metal plate such as aluminum or copper in order to improve heat dissipation. The thickness of the holding plate 50 is, for example, 0.05 to 3.0 mm, and is set according to heat dissipation and light utilization efficiency. In this case, a wavelength conversion material such as phosphor particles can be applied by being mixed in an amorphous silica mixed solution, for example. The reflective layer 52 containing Ag or the like can be provided on the other surface of the holding plate 50 using a sputtering method, a vapor deposition method, or the like.

Alternatively, as shown in FIGS. 2C and 2D, the reflective layer 52 and the wavelength conversion layer 54 can be provided on one surface of the holding plate 50 in this order. In this way, the wavelength conversion layer 54 and the reflection layer 52 can be reliably and easily bonded to the inner wall 30d of the heat conducting unit 30. For this reason, it can be set as the reflection type structure which improved heat dissipation. Moreover, you may join between the reflection layer 52 and the heat conductive part 30 through the adhesive layer (not shown) with good heat dissipation, such as silicone. Further, the reflective layer 52 may be configured to use both the reflective layer 52 and the adhesive layer by using, for example, solder.

FIG. 3A is a schematic plan view of the first irradiation position of the second embodiment, FIG. 3B is a schematic cross-sectional view along the line CC, and FIG. 3C is the second irradiation position. 3D is a schematic sectional view taken along the line CC, FIG. 3E is a schematic plan view of the third irradiation position, and FIG. 3F is a line taken along the line CC. It is the model sectional drawing.

In the second embodiment, the irradiation region moving means 24 moves the irradiation unit 20b to a different position along the central axis 30c of the recess 30b. That is, FIGS. 3A and 3B show the first irradiation position that is the farthest from the first surface. 3C and 3D show the second irradiation position closer to the first surface than the first irradiation position. FIGS. 3E and 3F show the third irradiation position closest to the first surface. The wavelength conversion layer 54 has an emission spectrum of the wavelength conversion light or a ratio of the optical output of the wavelength conversion light to the optical output of the excitation light emitted through the wavelength conversion layer 54 at different positions along the direction of the central axis 30c. A region where at least one of them is different is provided. The excitation light emitted through the wavelength conversion layer 54 refers to the excitation light that is not absorbed by the wavelength conversion layer 54 and is reflected or scattered by the wavelength conversion layer 54 among the excitation light irradiated to the wavelength conversion layer 54. means. The boundary between different regions of the wavelength conversion layer 54 may change continuously. For this reason, the chromaticity and color temperature of the illumination light GT in which the wavelength conversion light and the excitation light emitted through the wavelength conversion layer 54 are mixed can be changed.

Further, the position of the heat conducting unit 30 may be moved along the central axis 30c by the irradiation region moving means 24. The irradiation area moving means 24 has, for example, a motor, a gear, etc., and an automatic moving means device that moves mechanically by an electromagnetic method or an electronic method, or these are simplified and moved manually by an operator. It can be a manual moving device.

FIG. 4A is a schematic perspective view of the solid-state lighting device according to the third embodiment, and FIG. 4B is a schematic cross-sectional view taken along the line CC.
The light guide 20 may be a spatial propagation optical path. In this figure, the excitation light G1 emitted from the semiconductor light emitting element is, for example, laser light, propagates through the space, is bent by the mirror 23, further propagates through the space, and is then emitted from the irradiation unit 20b. The irradiation region moving means 24 can move the position of the irradiation region on the wavelength conversion layer 54 when at least one of the irradiation unit 20b and the heat conducting unit 30 is rotated around the central axis 30c. In addition, a light guide or a light diffusing layer may be provided in any region in the optical path so that the excitation light can be scattered light. Note that at least one of the irradiation unit 20b and the heat conduction unit 30 can be moved relatively along the central axis 30c to change the irradiation position.

5A is a conical irradiation unit, FIG. 5B is a quadrangular pyramid irradiation unit, FIG. 5C is a triangular pyramid irradiation unit, FIG. 5D is an end polishing fiber irradiation unit, and FIG. e) is a schematic perspective view of the irradiation section of the fiber array, and FIG. 5F is a schematic perspective view of the irradiation section of the multilayer fiber array.
The irradiation part 20b can be obtained by processing the tip part of the light guide part 20 into a desired shape. The tip shape is a cone in FIG. 5A, a quadrangular pyramid in FIG. 5B, a triangular pyramid in FIG. For example, the excitation light G1 guided inside the light guide 20 can be totally reflected by the inclined surface of the tip, and the wavelength conversion layer 54 can be efficiently irradiated.

Further, in FIG. 5D, the end face obtained by obliquely polishing the tip of the optical fiber 21 is defined as an irradiation part 20b. The inclination angle of the end face can be set to, for example, 45 degrees so that the surface of the wavelength conversion layer 54 is efficiently irradiated. As shown in FIGS. 5 (e) and 5 (f), when the irradiation section 20b is formed by obliquely polishing the tip of the fiber array, the output of the excitation light can be increased and a large light quantity illumination device can be obtained.

The fiber array includes, for example, a substrate, a cover, an adhesive member, and a plurality of optical fibers. The number of V-grooves corresponding to the number of optical fibers is formed on one surface of the substrate. The cover is provided so as to cover the optical fibers arranged one by one in each V-groove formed in the substrate. The adhesive member is a solidified liquid adhesive and is provided between the substrate and the cover to fix the optical fiber. The material of the substrate and cover is a transparent member such as quartz glass, borosilicate glass, or sapphire. As the adhesive member, for example, an inorganic binder or a silicone resin that can withstand the high output of the semiconductor laser can be used. In this figure, a fiber array is shown in which an optical fiber is sandwiched and fixed between a substrate and a cover. However, a configuration in which the exit end of the optical fiber is fused and connected to the incident side surface of the substrate can also be used.

FIG. 6A is a schematic perspective view of a light emitting unit, and FIG. 6B is a schematic perspective view of a spotlight which is an application example thereof.
The spotlight can be used for stage lighting, for example. In this case, the chromaticity and color temperature of the illumination light change variously depending on requirements. As shown in FIG. 6A, in the first to third solid-state lighting devices, it is possible to meet these requirements by exchanging only the light emitting unit 35 including the wavelength conversion layer 54 and the heat conducting unit 30. It becomes easy.

FIG. 7A is a schematic perspective view of a solid-state lighting device according to the fourth embodiment, and FIG. 7B is a schematic cross-sectional view taken along the line DD.
The fourth embodiment is a transmissive solid-state lighting device that irradiates illumination light GT from the outer edge of the transparent tube 60 toward the outside. The solid state lighting device includes the light source unit 10, the transparent tube 60, the wavelength conversion layer 54, the irradiation unit 20 b, and the irradiation region moving unit 24.

The light source unit 10 is configured to emit the excitation light G1, and has at least a semiconductor light emitting element or the like as a means for generating the excitation light G1. The semiconductor light emitting device may be a laser device or a light emitting diode that emits excitation light G1 in the blue-violet to blue wavelength range.

The wavelength conversion layer 54 is provided on the inner wall 60a of the transparent tube 60, absorbs the excitation light G1, and emits wavelength conversion light having a wavelength longer than the wavelength of the excitation light G1. The wavelength conversion layer 54 has at least two regions in which at least one of the emission spectrum or the ratio of the light output of the wavelength converted light to the light output of the excitation light emitted through the wavelength conversion layer 54 is different. The excitation light emitted through the wavelength conversion layer 54 is excitation that is not absorbed by the wavelength conversion layer 54 but transmitted or scattered by the wavelength conversion layer 54 in the excitation mechanism irradiated to the wavelength conversion layer 54. Means light. In FIG. 7, the wavelength conversion layer 54 is provided with a first region 54 a and a second region 54 b at different positions along the central axis 60 c of the transparent tube 60.

The irradiation unit 20b is provided in the internal space of the transparent tube 60 so as to be surrounded by the wavelength conversion layer 54, and emits the illumination light GT from the outer wall 60b in the radial direction of the transparent tube 60. The irradiation region moving means 24 moves the position of the irradiation region of the excitation light emitted from the irradiation unit 20b toward the wavelength conversion layer 54. The irradiation unit 20b moves in a direction parallel to the central axis 60c, so that the excitation light irradiates different regions of the wavelength conversion layer 54. Alternatively, even if the transparent tube 60 is moved, the irradiation position on the wavelength conversion layer 54 can be moved, but the structure is easier if the irradiation unit 20b is moved.

The transparent tube 60 can have an outer diameter of 9 mm, an inner diameter of 4.5 mm, and a material of YAG ceramics, alumina ceramics, quartz glass, or the like.

The wavelength conversion layer 54 may be a mixture of a plurality of wavelength conversion materials. For example, the first region 54a may be blended with a wavelength conversion material made of a phosphor or the like so that the color temperature of the wavelength converted light is 5000K. Moreover, the 2nd area | region 54b may be mix | blended so that the color temperature of wavelength conversion light may be 3000K.

When the position of the irradiation unit 20b is moved by the irradiation region moving means 24, the color temperature of the mixed illumination light can be changed in the range of 3000 to 5000K. Note that it is more preferable to dispose the first region 54a and the second region 54b close to each other because the movement distance can be shortened.

FIG. 8A is a schematic perspective view of a transmissive solid-state lighting device according to the fifth embodiment, and FIG. 8B is a schematic cross-sectional view taken along the line DD.
In the fifth embodiment, two irradiation units 20b and 20c are provided, and excitation light is emitted from each.

The first region 54a includes, for example, a green wavelength conversion layer. The second region 54b includes a red wavelength conversion layer. The irradiation unit 20a mainly irradiates the first region 54a. The irradiation unit 20b mainly irradiates the second region 54b. The dose for the first region 54a and the dose for the second region can be determined independently. For this reason, the color temperature of the illumination light GT in which scattered light of excitation light, red light, and green light is mixed can be set within a desired range. In this case, the red phosphor layer having a large calorific value, for example, may be provided on the side close to the heat sink. Also, the color of the illumination light GT can be varied by adjusting the light output of the excitation light G1 from the irradiation unit 20b and the light output of the excitation light from the irradiation unit 20c.

FIG. 9A is a partially cut schematic perspective view of a transmissive solid-state lighting device according to the sixth embodiment, and FIG. 9B is a partially cut schematic sectional view.
In the present embodiment, the wavelength conversion layer 54 increases the thickness of the wavelength conversion layer 54 that emits monochromatic light as it approaches the semiconductor light emitting element 10 side. As the wavelength conversion layer 54 becomes thicker, the optical output of the wavelength converted light emitted from the wavelength conversion layer 54 increases.

On the other hand, since the excitation light absorbed by the wavelength conversion layer 54 increases and the excitation light transmitted through the wavelength conversion layer 54 decreases, the illumination light GT has an emission color in which the emission spectrum of the wavelength conversion layer 54 is dominant. It becomes. For this reason, when the irradiation region moving means 24 moves the position of the irradiation unit 20b in the direction in which the wavelength conversion layer 54 becomes thicker, the emission color of the illumination light GT changes from the emission color in which the emission color of the excitation light is dominant. The emission color of the layer can be changed to the dominant emission color.

FIG. 10A is a partially cut schematic perspective view of the solid state lighting device according to the seventh embodiment, FIG. 10B is a partially cut schematic cross sectional view, and FIG. 10C is a schematic cross sectional view of a modification. .
On the inner wall 60a of the transparent tube 60, a first region 54c whose thickness is constant along the central axis 60c and a second region 54d whose thickness increases toward the light source are stacked in this order. The second wavelength converted light from the second region 54d must pass through the first region 54c. For this reason, it is preferable that the wavelength of the second wavelength converted light is longer than the wavelength of the first wavelength converted light emitted from the first wavelength conversion layer 54c. For example, the second wavelength converted light can be red light and the first wavelength converted light can be green light. When the irradiation unit 20b is moved in the direction in which the thickness of the second wavelength converted light 54d is increased by the irradiation region moving unit 24, the color of the illumination light GT is changed from the color dominant to the first wavelength converted light to the second. The wavelength-converted light can change to a dominant color. Note that the thickness of the wavelength conversion layer 54d may change stepwise instead of continuously.

Further, as shown in FIG. 10C, the boundary between the first region 54a and the second region 54b may be V-groove cross-sectional. Since the cross-sectional area of the wavelength conversion layer changes, the chromaticity of the illumination light GT can be changed.

FIG. 11A is a schematic perspective view of a light conversion unit constituting the solid-state lighting device according to the eighth embodiment, FIG. 11B is a schematic view showing the configuration of the solid-state lighting device, and FIG. It is a model perspective view of a light body.
The solid state lighting device includes a light source unit 10, a light emitting unit 92, and an irradiation region moving unit 24.

The light emitting unit 92 includes a transparent tube 60, a plurality of (for example, 20) optical fibers 80, a fixing member 81 that bundles and fixes the optical fibers, and a rod-shaped light guide unit 20 that is provided with an irradiation unit 20b at the tip and is made of glass or the like. And a holding member 82 of the light guide 20, a reflection pin 84 coated with barium sulfate or the like, an upper fixing cap 86, a heat sink 88, and a stopper 88. For example, the light emitting unit 92 may have a length of approximately 110 mm and a heat sink 88 having a diameter of 50 mm. Moreover, the light guide part 20 shall be about 24 mm in length, 2.5 mm in diameter, etc., for example. The tip of the light guide 20 is provided as a cone-shaped irradiation part 20b having a height of 1 to 2 mm, for example. The length of the wavelength conversion layer 54 is 6 mm or the like.

The transparent tube 60 includes, for example, YAG ceramics (thermal conductivity: 11.7 W / m · K), alumina ceramics (thermal conductivity: 33.5 W / m · K), quartz glass (thermal conductivity: 1.4 W / m). m · K) and the like are appropriately selected according to the heat generation amount of the wavelength conversion layer.

Further, when the optical fiber 80 and the light guide unit 20 are not in contact with each other, a Fresnel loss occurs between the exit surface of the optical fiber 80 and the incident part of the light guide unit 20. When antireflection treatment is performed on these end faces, Fresnel loss can be reduced. Alternatively, the optical fiber 80 and the light guide unit 20 may be integrated by fusion or the like.

12A is a schematic cross-sectional view of the light conversion unit of the solid state lighting device of the eighth embodiment, FIG. 12B is a schematic cross-sectional view in the vicinity of the transparent tube, and FIG. 12C is a schematic perspective view of the application example. Figure.
The excitation light emitted from the optical fiber is introduced into the light guide 20 and guided as shown by a solid line, then totally reflected by the conical surface, and provided around the irradiation part 20b as shown by a broken line. The wavelength conversion layer 54 is efficiently irradiated. In this case, the irradiation region moving unit 24 can change the chromaticity of the illumination light GT by changing the position of the irradiation unit 20b in, for example, the direction in which the light guide unit 20 extends. Excitation light from the cone-shaped irradiation part 20b to the reflection pin 84 is slight, and heat generation in the light-emitting part 92 is substantially limited to the wavelength conversion layer 54. The semiconductor light emitting element 10 is provided apart from the light emitting unit 92. For this reason, the heat sink 88 may be small enough to have a size capable of radiating the heat of the light emitting portion 92.

FIG. 12C shows an application example of the solid state lighting device of the eighth embodiment, and it can be used for a vehicle headlamp, a street lamp, and the like by further providing and condensing a reflector 94.

FIG. 13A is a schematic perspective view of a solid-state lighting device according to the ninth embodiment, and FIG. 13B is a schematic cross-sectional view along AA.
The solid-state lighting device includes a light source unit 10, a light conversion layer 130, a direction conversion unit 122, a solar cell 160a that is an energy conversion element, and a functional element 170.

The light source unit (light engine) 10 includes a semiconductor light emitting element 12. The semiconductor light emitting element 12 can be a light emitting diode (LED) or a laser diode (LD). When the light beam G1 that is excitation light from the light source unit 10 is guided using the optical fiber bundle 100 or the like, the heat generated in the light source unit 10 is not conducted to the light conversion layer 130. For this reason, a temperature rise can be suppressed in the vicinity of the light conversion layer 130.

Further, when the semiconductor light emitting element 12 is an LD, the light spreading angle can be narrowed to 40 ° × 25 ° or the like, which is more preferable because the incident efficiency to the optical fiber bundle 100 can be increased. The length of the optical fiber bundle 100 may be as short as several meters.

The light source unit 10 may further include drive circuits 113 and 116 and a heat sink (not shown). In this figure, the semiconductor light emitting element 12 is an LD with an optical output of 1 W or the like, and the number thereof is 20 or the like. The number of LDs is not limited to 20. In this case, it is necessary to determine the size of the heat sink according to the power consumption of the LD.

The light source unit 10 further includes a semiconductor light emitting element 15 that emits light IR used for controlling a signal for driving the functional element 170. The emission wavelength of the light IR used for signal control may be the same as the emission wavelength of the light, but may be infrared light that does not affect illumination (emission wavelength range of 700 to 1000 nm) or the like. The output of the light IR for signal control may be small.

In addition, if a lens L1 or the like is provided between one end of the optical fiber bundle 100 and the semiconductor light emitting element 12 to condense the light beam, the incident efficiency to the optical fiber bundle 100 can be further increased. When the number of LDs is 20, the optical fiber bundle 100 can include optical fibers 101 to 120 as respective light guide paths. Each optical fiber can be a plastic optical fiber or the like. Note that the emission wavelength of the semiconductor light emitting element 12 used for the illumination light GT is in the range of blue-violet (405 nm) to red light (700 nm).

The light conversion layer 130 has a light diffusing agent that diffuses the light beam from the semiconductor light emitting element 12 and converts it into scattered light, or a wavelength conversion material that absorbs the light beam G1 and converts it into wavelength converted light. The light conversion layer 130 includes a plurality of divided regions, and light emitted from each region has a different emission spectrum.

In the light diffusing layer, light diffusing particles containing a material having a high diffusion transmittance are arranged dispersed in a resin layer or the like. For this reason, scattering by particles increases and coherence can be reduced. The light scattering particles can be polymethyl methacrylate or calcium carbonate.

Further, when the wavelength conversion material is made to absorb the light beam G1 which is blue-violet light (emission wavelength: 405 nm) to blue light (emission wavelength: 490 nm) from the semiconductor light emitting element 12 to emit wavelength conversion light, a light conversion layer. Reference numeral 130 can be a wavelength conversion layer including a green YAG (Yttrium-Aluminum-Garnet) phosphor, a yellow YAG phosphor, a red YAG phosphor, and the like.

Also, the solid state lighting device can have a heat conducting portion 150 made of a metal or ceramic having high thermal conductivity. For example, the first surface 150a of the heat conducting unit 150 is provided with a recess 150b. The recess 150b has an inner wall 150c that recedes from the first surface 150a and whose cross-sectional width becomes narrower in the depth direction. Further, a through hole 150d continuous with the recess 150b is further provided around the central axis 150e of the recess 150b.

13B, the heat conducting portion 150, the concave reflection layer 140 provided on the inner wall 150c, and the light conversion layer 130 provided on the concave reflection layer 140 constitute the lamp portion 200. The upper end of the recess 150b can have a diameter of approximately 8 mm.

Also, the solid state lighting device can have a diffusion plate 145 so as to cover the recess 150b. The diffusing plate 145 can include a light diffusing agent and the like, and a uniform light emitting surface can be obtained without making a subtle difference in position in the lamp unit 200 having different color temperatures inconspicuous. Further, the diffusion plate 145 may include a green wavelength conversion layer.

The direction changing part 122 is provided so as to penetrate the through-hole 150d, and one end becomes an incident part of the light beam G1, and the other end becomes an irradiation part 122a. When the other end is obliquely polished, for example, the light conversion layer 130 can be irradiated by changing the emission direction by 90 degrees in the vertical plane while maintaining the narrow divergence angle of the guided light beam G1. Moreover, it is preferable that an irradiation direction can change 360 degree | times within a horizontal surface. The direction conversion unit 122 has a size that fits in a cylinder with an outer diameter of 2 mm.

Further, when the concave reflection layer 140 is made of a metal having high thermal conductivity, heat generated by wavelength conversion loss in the wavelength conversion material can be released to the outside through the heat conducting unit 150 while maintaining the light reflectance at 90% or more. It becomes easy.

In the ninth embodiment, the energy conversion element is a photoelectric conversion element such as the solar cell 160a. The solar cell 160a is composed of semiconductor pn junctions arranged in an array, and generates photovoltaic power by light irradiation.

When the electric energy generated by the photovoltaic power of the solar cell 160 a is used for driving the functional element 170, the optical signal IR is transmitted to the switch element 191 via the optical fiber 121 for driving signal. When a current flows through the photodiode 180 disposed at the far end opening of the optical fiber 121, an input signal to a TIA (Trans-Impedance Amplifier) 190 is obtained. For example, the switch element 191 is turned on using the output signal Vout of the TIA 190 as a trigger, and the photovoltaic power of the solar cell 160 a is supplied to the functional element 170. Note that the electrical energy generated by the photovoltaic power can be stored in the storage battery 193 or the like.

As a result, the functional element 170 can be driven, and the chromaticity and color temperature of the illumination light GT emitted from the lamp unit 200 can be changed. The functional element 170 can be, for example, an electro-mechanical element such as a piezoelectric element. *

Note that the solar cell 160a is not provided with the light conversion layer 130 inside the recess 150b and the through hole 150d of the lamp unit 200, and is always irradiated with a part of the scattered light of the light beam G1 and a part of the illumination light. It is good to provide in the area. In particular, it is preferably provided in the region 141 where unnecessary light that does not contribute to the light extraction efficiency and is not easily reflected by the concave reflection layer 140 is irradiated. That is, as shown in FIG. 13B, it is preferably provided on the inner wall of the through hole 150d. A space for moving the direction changing portion 122 is required inside the through hole 150d. That is, stray light returning to the through hole 150d through this space or the direction changing part 122 itself may be used.

When the light conversion layer 130 is made of a phosphor, the phosphor provided on the surface of the concave reflection layer 140 may be a mixture of a plurality of phosphors having different emission spectrum peak wavelengths. For example, in FIG. 13, the first region 131 of the light conversion layer 130 includes a first wavelength conversion material (for example, a green phosphor) and a second wavelength conversion material (for example, a red phosphor) at a first mixing ratio. Including. In addition, the second region 132 of the light conversion layer 130 is a second region in which the first wavelength conversion material (for example, green phosphor) and the second wavelength conversion material (for example, red phosphor) are different from the first mixing ratio. It is included in the mixing ratio. In addition, the third region 133 of the light conversion layer 130 includes a first wavelength conversion material (for example, a green phosphor) and a second wavelength conversion material (for example, a red phosphor) in a first mixing ratio and a second mixing ratio. A third mixing ratio different from the ratio is included. The first region 131 is provided on the first surface 150a side, and the third region is provided on the through hole 150d side.

Such first to third regions 131, 132, 133 of the light conversion layer 130 can be provided concentrically. For example, in FIG. 13A, the color temperature may be continuously changed so that the color temperature is high on the side close to the through-hole 150d and the color temperature is lowered as the distance is increased. When the irradiation position of the light beam G1 is changed along the central axis 150e, the chromaticity of the illumination light GT, which is a combination of the wavelength converted light and the blue scattered light, can be tuned (changed).

FIG. 14A is a schematic perspective view for explaining the operation of the functional element in the OFF state, FIG. 14B is a schematic sectional view taken along the line AA, and FIG. 14C is the operation of the functional element in the on state. FIG. 14D is a schematic cross-sectional view taken along the line AA.
The direction changing part 122 is provided so as to penetrate the through hole 150d. The irradiation unit 122a of the direction conversion unit 122 includes an oblique polishing surface, and the light beam G1 irradiates the light conversion layer 130 after being reflected by the polishing surface. In the off state of the functional element 170, bluish illumination light having a high color temperature is emitted. If the color temperature of the illumination light GT is lowered, as shown in FIGS. 14C and 14D, the photovoltaic device 160a turns on the functional element 170 such as a piezoelectric element to turn on the direction changing unit. The irradiation unit 122a of 122 is moved upward. As a result, illumination light GT having a low color temperature can be obtained. 14A and 14C show a state before the diffusion plate 145 is provided.

Also, speckle noise can be reduced if the direction changing unit 122 is vibrated minutely using a piezoelectric element. For this reason, the coherence property of the illumination light GT can be reduced, and the safety of the illumination light GT can be increased. As the piezoelectric material, quartz, berlinite, tourmaline, or the like can be used.

In the ninth embodiment, it is possible to control the chromaticity, color temperature, and the like of the illumination light GT by driving the functional element 170 only by the optical transmission system without supplying electric energy to the lamp unit 200 by the electric wiring.

FIG. 15A is a schematic perspective view of a solid-state lighting device according to the tenth embodiment, and FIG. 15B is a schematic cross-sectional view along the line AA.
In the tenth embodiment, the light conversion layer 130 including the wavelength conversion material includes a first region 134 and a second region that are fan-divided into different positions around the central axis 150e of the inclined recess 150b of the heat conducting unit 150. 135 and a third region 136.

The first region 134 of the light conversion layer 130 includes a first wavelength conversion material (for example, a green phosphor) and a second wavelength conversion material (for example, a red phosphor) at a first mixing ratio. In addition, the second region 135 of the light conversion layer 130 is a second region in which the first wavelength conversion material (for example, green phosphor) and the second wavelength conversion material (for example, red phosphor) are different from the first mixing ratio. It is included in the mixing ratio. In addition, the third region 136 of the light conversion layer 130 is formed by combining a first wavelength conversion material (for example, a green phosphor) and a second wavelength conversion material (for example, a red phosphor) with a first mixing ratio and a second mixing ratio. A third mixing ratio different from the ratio is included.

The first to third regions 134, 135, 136 of the light conversion layer can be arranged in a fan shape around the central axis 150e of the recess 150b. The first to third regions 134, 135, and 136 can absorb the irradiated light beam G1 and emit the wavelength-converted light and the scattered light converted from the light beam G1 without being absorbed by the light conversion layer 130. it can. As a result, illumination light having different chromaticity and color temperature can be emitted from each region. 15A and 15B, the first to third regions 134, 135, and 136 are provided as a pair of positions that are substantially symmetrical with respect to the central axis 150e, but the present invention is not limited to this.

FIG. 16A is a schematic perspective view for explaining the operation of the tenth embodiment, FIG. 16B is a schematic perspective view of the irradiation state of the first region, and FIG. 16C is a irradiation state of the second region. FIG. 16D is a schematic perspective view of the irradiation state of the third region.
As shown in FIG. 16A, the direction changing portion 122 disposed inside the through hole 150d is rotatable around the central axis 150e of the recess 150b. That is, the functional element 170 has a rotation mechanism such as a motor, and can rotate the direction changing unit 122 at a predetermined angle around the central axis 150e.

As illustrated in FIG. 16B, the emission unit 122 a of the direction conversion unit 122 emits the light beam G <b> 1 toward the first region 134 of the light conversion layer 130, and depends on the composition of the wavelength conversion material in the first region 134. The illumination light GT in which the wavelength-converted light and the blue scattered light multiple-reflected by the wavelength conversion material are mixed is emitted.

When the chromaticity or color temperature of the illumination light GT is not in the desired range, for example, as shown in FIG. 16C, the direction changing unit 122 is rotated to irradiate the second region 135 with the light beam G1. . When the chromaticity and color temperature of the illumination light GT are not in the desired ranges, the direction changing unit 122 is further rotated and the light beam G1 is emitted toward the third region 136 as shown in FIG. Thus, the chromaticity and color temperature of the illumination light GT can be controlled without directly connecting the power source and the lamp unit 200 directly.

FIG. 17 is a schematic perspective view of the eleventh embodiment.
The light conversion layer 130 may be a first region 137 containing a light diffusing agent, a second region 138 containing a red wavelength conversion material, and a third region 139 containing a green wavelength conversion material. When the blue LD light beam is irradiated toward the first region 137, blue scattered light by the light scattering agent can be emitted as monochromatic illumination light GT. When the blue LD light beam is irradiated toward the second region 138, red wavelength converted light can be emitted as monochromatic illumination light GT. Further, when the blue LD light beam is irradiated toward the third region 139, monochromatic green wavelength converted light can be emitted as illumination light GT. Thus, the emission spectra of the illumination light from the first to third regions 137, 138, 139 are different.

Also, for example, the light conversion layer 130 can be a second region 138 and a third region 139 containing a yellow wavelength conversion material. When the yellow light intensity of the second region 138 and the yellow light intensity of the third region 139 are made different by changing the content of the yellow phosphor, etc., white light with different chromaticities can be obtained. Further, the light conversion layer 130 may contain a light scattering agent together with a yellow wavelength conversion material.

FIG. 18A is a schematic cross-sectional view for explaining the action in the first state of the solid state lighting device of the eleventh embodiment, and FIG. 18B is a schematic cross-sectional view for explaining the action in the second state.
In the eleventh embodiment, the energy conversion element is the Seebeck effect element 160b. The Seebeck effect is an effect in which a voltage is generated when a temperature difference is provided between different metals or semiconductors. The Seebeck effect and the Peltier effect are reversible. The Seebeck effect element 160b is provided between the light conversion layer 130 and the inner wall 150c of the heat conducting unit 150, for example. In this way, one surface of the Seebeck effect element 160b is in contact with the light conversion layer (high temperature side) 130, and the other surface is in contact with the inner wall (low temperature side) 150c of the heat conducting unit 150. The functional element 170 can be mechanically driven by an electromotive force generated by temperature.

The functional element 170 is, for example, a micro MEMS (Micro Electro Mechanical Systems) mirror 171a that can change the reflection angle. When the angle of the micromirror in the second state is changed so as to be larger than the incident angle in the first state of FIG. 18A, the reflected light beam is above the irradiation position of the light conversion layer in the first state. Can be irradiated. For this reason, the chromaticity and color temperature of the illumination light GT can be controlled. Since the size of the MEMS mirror 171a is very small, power consumption may be small and light energy may be small. *

Further, the functional element 170 is not limited to one that performs rotational movement or linear movement. For example, an optical switch that changes the irradiation position by changing the optical path may be used.

According to the first to eleventh embodiments, it is possible to provide a solid state lighting device that can easily dissipate heat and can easily adjust chromaticity and color temperature. Such a solid state lighting device can be widely used for stage lighting, spot lighting, vehicle headlamps, and the like.

Furthermore, according to the solid state lighting devices of the ninth to eleventh embodiments, the chromaticity and color temperature of the illumination light GT can be controlled without connecting the lamp unit to the power source. Moreover, since the lamp part does not have a solid light emitting element, it is easy to reduce the size and weight.

Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the scope of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

Claims (20)

A light source unit having a semiconductor light emitting element and emitting excitation light;
A light guide unit having an incident part into which the excitation light is introduced, and an irradiation part that emits the excitation light introduced into the incident part;
A wavelength conversion layer to which the excitation light emitted from the irradiation unit is irradiated, wherein the first region absorbs the excitation light and emits first wavelength conversion light having a wavelength longer than the wavelength of the excitation light; A second region that absorbs the excitation light and emits second wavelength converted light having a wavelength longer than the wavelength of the excitation light, wherein the first wavelength converted light and the second wavelength converted light are The emission spectrum is different or the ratio of the optical output of the first wavelength converted light to the optical output of the excitation light emitted through the first region and the excitation light emitted through the second region A wavelength conversion layer having a different ratio of the light output of the second wavelength converted light to the light output;
An irradiation region moving means for changing an irradiation position on the surface of the wavelength conversion layer of the excitation light emitted from the irradiation unit;
A solid state lighting device. A heat conduction portion having a recess recessed from the first surface, and having an inner wall provided around the central axis of the recess and widened toward the first surface;
The first region and the second region are respectively disposed at different positions on the inner wall along a circumferential direction around the central axis;
The solid-state lighting device according to claim 1, wherein at least one of the heat conducting unit and the irradiation unit rotates around the central axis. A heat conduction portion having a recess recessed from the first surface, and having an inner wall provided around the central axis of the recess and widened toward the first surface;
The first region and the second region are respectively disposed on the inner wall at different positions along the central axis;
The solid-state lighting device according to claim 1, wherein at least one of the heat conducting unit and the irradiation unit moves along the central axis. The solid state lighting device according to claim 2, further comprising a cover portion that covers the concave portion and includes a light diffusion layer. The solid state lighting device according to claim 4, wherein the cover portion further includes a wavelength conversion layer. A substrate provided on the inner wall, further comprising a holding plate and a reflective layer provided on a surface of the holding plate;
The wavelength conversion layer is provided on the first surface side so as to cover the reflective layer, or provided on the holding plate side opposite to the reflective layer and on the first surface side. The solid-state lighting device according to claim 2. Further comprising a transparent tube having a central axis;
The first region and the second region are respectively provided so as to cover the inner wall of the transparent tube and along the central axis,
The solid state lighting device according to claim 1, wherein at least one of the transparent tube and the irradiation unit moves in a direction parallel to the central axis. The solid state lighting device according to claim 7, wherein the first region and the second region are disposed adjacent to different positions along the central axis. The first region covers the inner wall,
The solid state lighting device according to claim 7, wherein the second region covers the first region. 10. The solid state lighting device according to claim 9, wherein the thickness of at least one of the first region and the second region gradually increases along the central axis. The solid-state lighting device according to claim 1, wherein the irradiation unit is one end of a light guide that guides the excitation light, or a mirror that bends the excitation light that has been spatially propagated. A light source unit having a semiconductor light emitting element;
A light conversion layer including a wavelength conversion material that absorbs excitation light from the semiconductor light-emitting element and converts it into wavelength-converted light, and has two regions that each emit illumination light having different emission spectra;
A direction changing portion having an incident portion into which the excitation light is introduced and an irradiation portion that irradiates the excitation light toward the light conversion layer;
An energy conversion element that converts light or heat into electricity;
A functional element that changes the irradiation direction from the direction changing portion between the first region and the second region using electrical energy generated by the energy conversion device;
A solid state lighting device. The first region of the light conversion layer includes a first wavelength conversion material and a second wavelength conversion material at a first mixing ratio, and is not absorbed by the first wavelength conversion light and the first region. Emit scattered light converted from excitation light,
The second region of the light conversion layer includes the first wavelength conversion material and the second wavelength conversion material at a second mixing ratio different from the first mixing ratio, and the second wavelength conversion light and Emitting scattered light converted from the excitation light without being absorbed by the second region,
The solid-state lighting device according to claim 12, wherein the chromaticity or color temperature of the illumination light can be changed. The first region of the light conversion layer includes a first wavelength conversion material, and emits first wavelength converted light and scattered light converted from the excitation light without being absorbed by the first region,
The second region of the light conversion layer includes the first wavelength conversion material, and absorbs the second wavelength converted light having a light output different from the light output of the first wavelength converted light and the second region. Without being released from the scattered light converted from the excitation light,
The solid-state lighting device according to claim 12, wherein the chromaticity or color temperature of the illumination light can be changed. The first region of the light conversion layer includes a first wavelength conversion material, and emits first wavelength conversion light and scattered light converted from the excitation light without being absorbed by the first wavelength conversion material. And
The second region of the light conversion layer has a light diffusing agent, emits scattered light converted from the excitation light,
The solid state lighting device according to claim 12, wherein the chromaticity of the illumination light can be changed. A first surface, a recess recessed from the first surface, and a heat conduction portion having a through hole that is continuous with the bottom of the recess and penetrates the heat conduction portion;
A concave reflection layer provided between the inner wall of the recess and the light conversion layer;
Further comprising
The solid-state lighting device according to claim 12, wherein the direction changing portion passes through the through hole. The solid-state lighting device according to claim 16, wherein the light conversion layer has the first region on the first surface side and the second region on the bottom side. The solid state lighting device according to claim 16, wherein the light conversion layer has the first region and the second region at different positions around a central axis of the recess. The solid-state lighting device according to claim 16, wherein the energy conversion element is a solar cell provided on an inner wall of the through hole, or a Seebeck effect element provided between the concave reflection layer and the heat conducting unit. The solid-state lighting device according to claim 12, wherein the functional element includes any one of a piezoelectric element, a MEMS mirror, and an optical switch.

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