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WO2014071689A1 - Liquide nettoyant pour l'élimination de résidus formant barrière à la lumière - Google Patents

Liquide nettoyant pour l'élimination de résidus formant barrière à la lumière Download PDF

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Publication number
WO2014071689A1
WO2014071689A1 PCT/CN2013/001336 CN2013001336W WO2014071689A1 WO 2014071689 A1 WO2014071689 A1 WO 2014071689A1 CN 2013001336 W CN2013001336 W CN 2013001336W WO 2014071689 A1 WO2014071689 A1 WO 2014071689A1
Authority
WO
WIPO (PCT)
Prior art keywords
cleaning solution
solution according
ether
group
gallic acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2013/001336
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English (en)
Chinese (zh)
Inventor
刘兵
彭洪修
孙广胜
颜金荔
徐海玉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Anji Microelectronics Shanghai Co Ltd
Original Assignee
Anji Microelectronics Shanghai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anji Microelectronics Shanghai Co Ltd filed Critical Anji Microelectronics Shanghai Co Ltd
Publication of WO2014071689A1 publication Critical patent/WO2014071689A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen

Definitions

  • the present invention relates to a cleaning solution, and more particularly to a cleaning solution for removing photoresist residues. Background technique
  • the photoresist cleaning liquid is mainly composed of a polar organic solvent, a strong alkali, and/or water, and the photoresist on the semiconductor wafer is removed by immersing the semiconductor wafer in the cleaning liquid or rinsing the semiconductor wafer with the cleaning liquid.
  • a photoresist cleaning solution containing water which generally has a water content of more than 5%
  • JP 1998239865 discloses an aqueous cleaning solution having a composition of tetramethylammonium hydroxide.
  • TMAH dimethyl sulfoxide
  • DMI 1,3,-dimethyl-2-imidazolidinone
  • water Immersing the wafer into the cleaning solution to remove more than 20 photoresists on the metal and dielectric substrate at 50-100 ° C; the etching of the semiconductor wafer substrate is slightly higher, and the light on the semiconductor wafer cannot be completely removed.
  • Gluing insufficient cleaning ability; for example, US Pat. No. 5,529,887 discloses potassium hydroxide
  • An alkaline cleaning solution consisting of (KOH), mercapto diol monodecyl ether, water-soluble fluoride and water, immersing the wafer in the cleaning solution, and removing light on the metal and dielectric substrate at 40-90 ° C Engraved. It has a high corrosion to the semiconductor wafer substrate. In such a cleaning liquid, since it contains a free strong basic group, OH, and water is present, it tends to cause some corrosion to the metal substrate.
  • the other type is a photoresist cleaning solution that is substantially free of water, typically having a water content of less than 5%, or even substantially no water.
  • 5,480,585 discloses a cleaning solution containing a non-aqueous system consisting of ethanolamine, sulfolane or dimethyl sulfoxide and catechol, capable of removing metal and dielectric substrates at 40 to 120 ° C.
  • Photoresist which is essentially non-corrosive to metals.
  • US2005119142 discloses a non-aqueous cleaning solution comprising an alkoxy group-containing polymer, dipropylene glycol decyl ether, N-methylpyrrolidone and methyl isobutyl ketone. The cleaning solution can be applied to both positive photoresist and negative photoresist cleaning.
  • the non-aqueous photoresist cleaning solution has no corrosion to the metal substrate because it does not contain water; however, when the cleaning liquid is mixed with a small amount of water in the operating system, the corrosion rate of the metal is significantly increased, thereby causing the metal. Corrosion of the substrate. Therefore, there is a problem that the operation window is small.
  • the technical problem to be solved by the present invention is to provide a cleaning liquid for removing photoresist residue and its composition.
  • the cleaning solution removes the photoresist residues on the wafer while substantially non-corrosive to substrates such as aluminum, silver, copper, titanium, tungsten and non-metal silicon dioxide, gallium nitride, etc.
  • Pad has a better cleaning effect and has a good application prospect in the fields of semiconductor and LED wafer cleaning.
  • the present invention provides a novel cleaning liquid comprising an alcohol amine, an organic solvent, gallic acid and its ester, and 3-amino-1,2,4-triazole.
  • the content of the alkanolamine is 5 to 50% by weight (% by mass), preferably 10 to 45% by weight.
  • the content of the organic solvent is 40-90% by weight, preferably 50-85% by weight.
  • the content of gallic acid and its ester is 0.05 to 5 wt%, preferably 0.1 to 3 wt%, wherein the content of 3-amino-1,2,4-triazole is 0.01-5 wt%, preferably 0.05 -3 wt %
  • the cleaning liquid for removing photoresist residues disclosed in the present invention preferably, water, hydroxylamine and/or fluoride may not be contained.
  • the alcoholamine is preferably monoethanolamine, N-methylethanolamine, diethanolamine, triethanolamine, isopropanolamine, ethyldiethanolamine, N,N-diethylethanolamine, N-(2-amino group Ethyl)ethanolamine and diglycolamine. Preference is given to monoethanolamine, diglycolamine and mixtures thereof.
  • the organic solvent is preferably one or more of sulfoxide, sulfone, imidazolium, pyrrolidone, imidazolidinone, amide and alcohol ether; the sulfoxide is preferably dimethyl sulfoxide.
  • the sulfone is preferably one or more of methyl sulfone and sulfolane;
  • the imidazolidinone is preferably 2-imidazolidinone and 1,3-dimethyl One or more of the group 2-imidazolium;
  • the pyrrolidone is preferably one or more of N-methylpyrrolidone, N-cyclohexylpyrrolidone and N-hydroxyethylpyrrolidone;
  • the imidazolinone is preferably 1,3-dimethyl-2-imidazolidinone amide, preferably one or more of dimethylformamide and dimethylacetamide;
  • the alcohol ether is preferably One or more of ethylene glycol alkyl ether and propylene glycol alkyl ether.
  • the ethylene glycol decyl ether is preferably one or more of ethylene glycol monoethyl ether, diethylene glycol monomethyl ether and diethylene glycol monobutyl ether; the propylene glycol decyl ether is preferably propylene glycol monomethyl One or more of ether, propylene glycol monobutyl ether and dipropylene glycol monomethyl ether.
  • gallic acid and its ester are preferably one of gallic acid, methyl gallate, ethyl gallate, butyl gallate, octyl gallate, lauryl gallate, 1-gallate glyceride. Or a variety.
  • the photoresist residue on the wafer can be cleaned at 50 ° C to 90 ° C.
  • the specific method is as follows: The wafer containing the photoresist residue is immersed in the cleaning liquid of the present invention, and after immersing at 50 ° C to 90 ° C for 10-30 min, it is taken out and rinsed, and then dried by high-purity nitrogen gas.
  • the cleaning solution of the present invention removes photoresist residue on the wafer while substantially no corrosion to substrates such as metal aluminum, silver, copper, titanium, tungsten and non-metal silicon dioxide, gallium nitride, and the like;
  • the cleaning effect of the metal pad in the LED is better.
  • the reagents and materials used in the present invention are commercially available.
  • the cleaning liquid of the present invention can be obtained by simply and uniformly mixing the above components. detailed description
  • the present invention adopts the following technical means: immersing the LED metal pad (Pad) wafer containing the photoresist residue in the cleaning liquid, and using it at 50 ° C to 90 ° C
  • the constant temperature oscillator was shaken at a vibration frequency of about 60 rpm for 10 to 30 minutes, and then rinsed and then dried with high purity nitrogen gas.
  • the cleaning effect of the photoresist residue and the corrosion of the cleaning solution on the wafer are shown in Table 3.
  • the cleaning liquid of the present invention has a good cleaning effect on a photoresist metal pad (Pad) wafer containing a photoresist residue, and has a wide temperature range.
  • a photoresist metal pad (Pad) wafer containing a photoresist residue
  • the cleaning of the LED metal pad remains and the metal aluminum is slightly corroded
  • 2 and Example 13 can be seen, under the same conditions of other components and the same operating conditions, without adding 3-amino-1,2,4-triazole, the cleaning of the LED metal pad is clean but the metal aluminum is slightly Corrosion indicates that there is a synergistic effect on the corrosion inhibition of metal aluminum by gallic acid and its esters and 3-amino-1,2,4-triazole in this system.
  • the present invention adopts the following technical means: immersing various metal wafers (aluminum, silver, copper, titanium, tungsten) without a pattern into the cleaning liquid, respectively, The mixture was shaken at 85 ° C for 60 minutes at a vibration frequency of about 60 rpm using a constant temperature oscillator, and then rinsed and then dried with high purity nitrogen gas. The resistance change before and after immersion was tested by a four-point probe instrument, and the corrosion rate was calculated, and the surface metallic luster was visually inspected for change. The results are shown in Table 4. Table 4 Partial Example 85 Corrosion rate of the lower metal, A/min
  • the cleaning liquid of the present invention has a small metal corrosion rate, and the apparent metallic luster of the metal remains good before and after washing.
  • the positive progress of the present invention is:
  • the cleaning solution of the present invention removes photoresist residues on the wafer while substantially non-corrosive to substrates such as metal aluminum, silver, copper, tantalum, tungsten and non-metal silicon dioxide, gallium nitride, and the like;
  • wt% of the present invention refers to the mass percentage.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)

Abstract

Ce liquide nettoyant pour l'élimination de résidus formant barrière à la lumière renferme un aminoalcool, un solvant organique, un acide gallique et son ester, ainsi qu'un 3-amino -1 2, 4-triazole. Ce liquide nettoyant pour l'élimination de résidus formant barrière à la lumière ne renferme cependant ni eau, ni d'hydroxylamine, ni fluorure. Application : dans le domaine du nettoyage de plaquettes de semi-conducteurs ou de DEL en vue du retrait de résidus formant barrière à la lumière sur un substrat tel que l'aluminium métallique, l'argent, le cuivre, le titane, le tungstène et le dioxyde de silicium non métallique ou le nitrure de gallium, et ce, quasiment sans corrosion.
PCT/CN2013/001336 2012-11-12 2013-11-05 Liquide nettoyant pour l'élimination de résidus formant barrière à la lumière Ceased WO2014071689A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201210451120.4 2012-11-12
CN201210451120.4A CN103809393A (zh) 2012-11-12 2012-11-12 一种去除光阻残留物的清洗液

Publications (1)

Publication Number Publication Date
WO2014071689A1 true WO2014071689A1 (fr) 2014-05-15

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2013/001336 Ceased WO2014071689A1 (fr) 2012-11-12 2013-11-05 Liquide nettoyant pour l'élimination de résidus formant barrière à la lumière

Country Status (3)

Country Link
CN (1) CN103809393A (fr)
TW (1) TW201418913A (fr)
WO (1) WO2014071689A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109541897A (zh) * 2018-12-14 2019-03-29 江苏艾森半导体材料股份有限公司 一种低腐蚀铝线清洗液
US11945697B2 (en) 2018-02-08 2024-04-02 Vita Inclinata Ip Holdings Llc Multiple remote control for suspended load control equipment apparatus, system, and method

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106527066B (zh) * 2015-08-31 2021-04-30 安集微电子科技（上海）股份有限公司 一种光阻残留物清洗液
CN105542990A (zh) * 2016-01-29 2016-05-04 苏州佳亿达电器有限公司 一种水基led芯片清洗剂

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW583719B (en) * 2002-10-11 2004-04-11 Wako Pure Chem Ind Ltd Agent for cleaning substrate
US20050119143A1 (en) * 1999-01-27 2005-06-02 Egbe Matthew I. Compositions for the removal of organic and inorganic residues
JP2006082253A (ja) * 2004-09-14 2006-03-30 Toyota Motor Corp 金型洗浄方法
CN101398638A (zh) * 2007-09-29 2009-04-01 安集微电子（上海）有限公司 一种光刻胶清洗剂
CN101412948A (zh) * 2007-10-19 2009-04-22 安集微电子（上海）有限公司 一种等离子刻蚀残留物清洗剂
CN101226346B (zh) * 2007-12-27 2010-06-09 周伟 光致抗蚀剂的脱膜工艺及在该工艺中使用的第一组合物、第二组合物和脱膜剂水溶液

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101162369A (zh) * 2006-10-13 2008-04-16 安集微电子（上海）有限公司 一种低蚀刻性光刻胶清洗剂及其清洗方法
CN101286016A (zh) * 2007-04-13 2008-10-15 安集微电子（上海）有限公司 低蚀刻性光刻胶清洗剂
CN101364056A (zh) * 2007-08-10 2009-02-11 安集微电子（上海）有限公司 一种光刻胶清洗剂

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050119143A1 (en) * 1999-01-27 2005-06-02 Egbe Matthew I. Compositions for the removal of organic and inorganic residues
TW583719B (en) * 2002-10-11 2004-04-11 Wako Pure Chem Ind Ltd Agent for cleaning substrate
JP2006082253A (ja) * 2004-09-14 2006-03-30 Toyota Motor Corp 金型洗浄方法
CN101398638A (zh) * 2007-09-29 2009-04-01 安集微电子（上海）有限公司 一种光刻胶清洗剂
CN101412948A (zh) * 2007-10-19 2009-04-22 安集微电子（上海）有限公司 一种等离子刻蚀残留物清洗剂
CN101226346B (zh) * 2007-12-27 2010-06-09 周伟 光致抗蚀剂的脱膜工艺及在该工艺中使用的第一组合物、第二组合物和脱膜剂水溶液

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11945697B2 (en) 2018-02-08 2024-04-02 Vita Inclinata Ip Holdings Llc Multiple remote control for suspended load control equipment apparatus, system, and method
CN109541897A (zh) * 2018-12-14 2019-03-29 江苏艾森半导体材料股份有限公司 一种低腐蚀铝线清洗液

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Publication number Publication date
TW201418913A (zh) 2014-05-16
CN103809393A (zh) 2014-05-21

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