WO2014048902A1 - Optoelectronic component, method for producing an optoelectronic component and optoelectronic component device - Google Patents

Abstract

Various embodiments of the invention relate to an optoelectronic component (100), said optoelectronic component (100) comprising: an optically active region (202) and an optically inactive region (204), the optically inactive region (204) being at least partially curved;the curved, optically inactive region (204) being designed for connection of the optoelectronic component (100).

Description

description

Optoelectronic component, method for producing an optoelectronic component and optoelectronic component

Baue1ementevorrichtung

In various embodiments, a

Optoelectronic component, a method for producing an optoelectronic component and a

Optoelectronic component device provided.

An optoelectronic component, for example an organic light emitting diode (OLED) or an organic solar cell, may conventionally have an optically active region and an optically inactive region.

The optically active region can absorb electromagnetic radiation and form a photocurrent therefrom or emit electromagnetic radiation by means of an applied voltage to the optically active region.

The optically inactive area can be used for electrical

Contacting and / or mechanically fixing the

be set up optoelectronic component.

In a conventional method, a planar, rigid optoelectronic device is mechanically by means of a

Clamping device mechanically fixed in a housing, frame or the like. The electrical connection of the

Optoelectronic component can be done for example by means of terminal contacts, spring pins or zebra connectors on the optically inactive region of the optoelectronic device.

In a further conventional method, an optically inactive region of an optoelectronic component with an electrically conductive adhesive to a holder mechanically fixed and electrically contacted.

In another conventional method, the

electrical contacting connectors, such as flexible printed circuit boards (flex PCB) or metal strips by means of various methods, such as soldering, bonding by means of electrical

conductive adhesive (anisotropic conductive film bonding - ACF bonding), applied by means of a friction welding process (ultrasonic bonding) or the like, on an optically inactive region of the optoelectronic component. The

Optoelectronic component can in turn be fixed mechanically by means of a clamping device. The connectors can then be soldered or by means of

electromechanical positive connection to electrodes of a

Circuit are electrically connected.

The exposed surface of the optoelectronic

Component, such as chromium, and the example

Solders, however, often can not be compatible with each other, i. not be miscible. This can lead to an arbitrary bleeding of the solder on the exposed surface of the optoelectronic component. The running solder can then complicate the precise positioning of the electrical connector on the solder joint.

Furthermore, the optically inactive region of

Optoelectronic device the efficiency of

Reduce surface use of the optoelectronic component with respect to the optically active surface. Furthermore, the optically inactive border area can be the aesthetic one

Affect overall appearance of the optoelectronic device.

In various embodiments, a

Optoelectronic component, a method for manufacturing an optoelectronic component and an optoelectronic component device are provided, with which it is possible to fix an optoelectronic component with a relatively larger optically active region, mechanically and electrically contact.

In the context of this description, an organic substance, regardless of the respective state of matter, in chemically uniform form, by

characteristic physical and chemical properties characterized compound of the carbon. Furthermore, in the context of this description, an inorganic substance may be one in a chemically uniform form, regardless of the particular state of matter

present, characterized by characteristic physical and chemical properties of the compound without

Carbon or simple carbon compound can be understood. In the context of this description, an organic-inorganic substance (hybrid substance) can be a

irrespective of the particular state of aggregation, in chemically uniform form, characterized by characteristic physical and chemical properties, of compounds containing carbon and free of carbon. In the context of this description, the term "substance" encompasses all of the abovementioned substances, for example an organic substance, an inorganic substance, and / or a hybrid substance Furthermore, in the context of this description, a substance mixture may be understood to mean components of two or more different substances whose

 For example, components are very finely divided. As a class of substance is a substance or mixture of one or more organic substance (s), one or more inorganic substance (s) or one or more hybrid

Understand substance (s). The term "material" can be used synonymously with the term "substance". The dimensional stability of a geometrically shaped substance can be described on the basis of the modulus of elasticity and the viscosity. A substance can be considered in various embodiments

dimensionally stable, i. be considered in this sense as hard and / or firm, if the substance has a viscosity in one

 2 23

Range from about 5 x 10 Pa-s to about 1 x 10 Pa-s and a modulus of elasticity in a range of about 1 x

6 12

10 Pa to about 1 x 10 Pa, since the substance after

Forming a geometric shape can show a viscoelastic to brittle behavior.

A fabric can be considered malleable, i. be considered in this sense as soft and / or liquid, if the substance is a

 -2

 Viscosity m in a range of about 1 x 10 Pa-s to

 2

about 5 x 10 Pa-s or a modulus of elasticity to about

 6

 1 x 10 Pa, since any change in the geometric shape of the substance to an irreversible, plastic

Change in the geometric shape of the substance can lead.

A dimensionally stable substance can be added by adding

Plasticizers, for example, solvents, or increasing the temperature become plastically moldable, i. be liquefied.

A plastically malleable substance can by means of a

Crosslinking reaction and / or removal of plasticizers

dimensionally stable, ie solidified. The solidification of a substance or mixture of substances, ie the transition of a substance from moldable to dimensionally stable, may involve a change of the viscosity, for example an increase of the viscosity from a first viscosity value to a second viscosity value. The second viscosity value may be many times greater than the first viscosity value, for example in a range of about 10 to 6

about 10. The fabric may be formable at the first viscosity and dimensionally stable at the second viscosity.

The solidification of a substance or mixture of substances, i. The transition of a substance from malleable to dimensionally stable, can a

Process or have a process are removed at low molecular weight components of the substance or mixture, for example, solvent molecules or low molecular weight, uncrosslinked components of the substance or the mixture, such as drying or chemical crosslinking of the substance or the mixture. The substance or the

Mixture may in the formable state a higher

Concentration of low molecular weight substances on the entire substance or substance mixture than in the dimensionally stable state.

Deformation of a dimensionally stable substance or mixture of substances can take place with special geometric shapes of the dimensionally stable substance or substance mixture, for example similar to a foil or a metal sheet, by means of a force

be realized, for example by means of bending or bending.

The connection of a first body with a second body, for example of an optoelectronic component with a holder, can be formed in a form-fitting, force-fitting and / or material-locking manner.

The connections may be detachable, i.

reversible, for example, a screw, a

Velcro closure. However, the connections may also be non-detachable, i. irreversible, for example a riveted joint, an adhesive bond. A non-detachable connection can only by destroying the

Lanyard to be separated.

In a positive connection, the movement of the first body of a surface of the second body are limited, wherein the first body is perpendicular, ie normal, moves in the direction of the restricting surface of the second body. For example, a pin (first body) in a blind hole (second body) may be restricted in motion in five of the six spatial directions.

In a positive connection, due to physical contact of the two bodies under pressure, static friction may restrict movement of the first body parallel to the second body. An example of one

non-positive connection, for example, a

Bottle cork in a bottleneck or a dowel with an oversize fit in a corresponding dowel hole. Furthermore, the non-positive connection by means of a

Press fit between a first body and a second body to be formed. For example, a diameter of the retaining pin can be chosen so that it is just under deformation of the retaining pin and / or the corresponding

Retaining recess can be inserted into the holding recess, but only with increased effort is removable from this again.

In a cohesive connection, the first body can be connected to the second body by means of atomic and / or molecular forces. Cohesive compounds can often be non-releasable compounds.

In the context of this description, an electronic component can be understood as a component which controls, controls or amplifies an electrical component

Stromes concerns, for example by using

Semiconductor devices. An electronic component may comprise one or more components from the following group of components: for example, a diode, a transistor, a thermogenerator, an integrated one

Circuits, a thyristor. In the context of this description, under an optoelectronic component, an outfeed of a

electronic component can be understood, wherein the optoelectronic component has an optically active region. The optically active region can absorb electromagnetic radiation and form a photocurrent therefrom or emit electromagnetic radiation by means of an applied voltage to the optically active region. In the context of this description, emitting electromagnetic radiation can emit

electromagnetic radiation.

In the context of this description, absorbing electromagnetic radiation may include absorbing

electromagnetic radiation.

For example, an electromagnetic radiation

emitting component in different

Embodiments be a semiconductor device emitting electromagnetic radiation and / or as an electromagnetic radiation emitting diode, as an organic electromagnetic radiation emitting diode, as an electromagnetic radiation emitting transistor or as an organic electromagnetic radiation

be formed emitting transistor. The radiation may, for example, be light in the visible range, UV light and / or infrared light. In this context, the

electromagnetic radiation emitting device

For example, as a light emitting diode (light emitting diode, LED) as an organic light emitting diode (organic light emitting diode, OLED), as light emitting

Transistor or emitting as organic light

Transistor be formed. The light-emitting

Component may be part of an integrated circuit in various embodiments. Furthermore, a

Provided a plurality of light emitting devices be, for example housed in a common housing.

In the context of this description, buckling may include, or be construed as synonymous with, any of the following processes: folding, bending, buckling, bending, laying (in the sense of: folding or folding), wrinkling , one

Entangle or similar. A fold can also be understood as a folding in a mathematical sense.

In various embodiments, a

Optoelectronic device provided, the

An optoelectronic component comprising: an optically active region and an optically inactive region, wherein the optically inactive region is at least partially curved; wherein the curved, optically inactive area is arranged for a conclusive connection of the optoelectronic component.

In one embodiment of the optoelectronic component, the optically active region may have a carrier and an optically active layer structure. In one embodiment of the optoelectronic component, the optically inactive region may have a carrier.

In one embodiment of the optoelectronic component, the carrier of the optically inactive region with the

Carrier of the optically active region to be physically connected.

In one embodiment of the optoelectronic component, the optically inactive region may have the same carrier as the optically active region. In one embodiment of the optoelectronic component, the optically active region for recording or

Be prepared to provide electromagnetic radiation.

In one embodiment of the optoelectronic component, the optically inactive region may at least partially surround, for example laterally surround, the optically active region. In one embodiment of the optoelectronic component, the optically inactive region may be at least one

be set geometric edge of the optoelectronic component. In one embodiment of the optoelectronic component, at least one region of the optically inactive region may be curved and / or curved away with respect to the image plane of the optoelectronic component. The image plane of the optoelectronic component is the plane into which the electromagnetic radiation

provided.

In one embodiment of the optoelectronic component, the curved, optically inactive region can be formed dimensionally stable.

In one configuration of the optoelectronic component, the curvature of at least one region of the curved, optically inactive region with respect to the optically active region can have an angle greater than or equal to approximately 90.

In one embodiment of the optoelectronic component, the curvature of at least one region of the curved, optically inactive region with respect to the optically active Range have an angle in a range of about 5 ° to about 360 °.

In one embodiment of the optoelectronic component of the curved, optically inactive region of the

have the following geometric shapes or such

established: a hook, such as a barb, an eyelet, a hole, a pin, a pin, a tongue. In one embodiment of the optoelectronic component, the optically inactive region can be electrically connected to the optically active region.

In one embodiment of the optoelectronic component, the optically inactive region can be set up in such a way that the optically active region is connected by means of the conclusive

Connection is contacted electrically.

In one embodiment of the optoelectronic component, the optically inactive region can be set up in such a way that the conclusive connection has mechanical fixing and / or electrical contacting of the optoelectronic component

Optoelectronic component, for example, forms the optically active region.

In one embodiment of the optoelectronic component, the carrier of the optically active region may be mechanically flexible, for example bendable. A mechanically flexible carrier can, for example, a

Have thickness, so that the carrier is malleable. The support may comprise, for example, a Kapton film (polyimide - PI), a metal foil or a PET film. For example, the carrier may comprise or be formed from a steel foil, a plastic foil or a laminate with one or more plastic foils. The plastic may include one or more polyolefins (eg, polyethylene (PE) high or low density or polypropylene (PP)) or be formed therefrom. Furthermore, the plastic

Polyvinyl chloride (PVC), polystyrene (PS), polyester and / or polycarbonate (PC), polyethylene terephthalate (PET),

Polyethersulfone (PES), PEEK, PTFE and / or

 Polyethylene naphthalate (PEN) or be formed therefrom.

In one embodiment, the support of the optically active region and / or the optically inactive region can be a

Have plastic film with a thickness of less

about 500 ym and / or a sheet, for example a

Sheet metal or a metal foil, having a thickness less than about 400 ym, for example, less than about 100 ym.

In one embodiment of the optoelectronic component, the optoelectronic component may have at least two optically inactive regions. In one embodiment of the optoelectronic component, the at least two optically inactive regions of an optoelectronic component can have a different

Have curvature. In one configuration of the optoelectronic component, the curvatures of at least two optically inactive regions of an optoelectronic component can be designed to be complementary to one another. In one embodiment of the optoelectronic component, the optoelectronic component can be designed as organic

Be arranged light emitting diode and / or organic solar cell.

In various embodiments, a method for producing an optoelectronic component

provided, the method comprising: forming an optoelectronic device, wherein the optoelectronic Component having an optically active region and an optically inactive region, curving the optically inactive region with respect to the optically active region, wherein the curved, optically inactive region is arranged for a coherent connection of the optoelectronic component.

In one embodiment of the method, the formation of the optically active region may comprise the formation of an optically active layer structure on or above a carrier.

In one embodiment of the method, the optically inactive region may comprise a carrier.

In one embodiment of the method, the carrier of the optically inactive region may be physically connected to the carrier of the optically active region.

In one embodiment of the method, the optically inactive region may have the same carrier as the optically active region.

In one embodiment of the method, the opti

active area for recording or providing

be set up electromagnetic radiation.

In one embodiment of the method, the optically inactive region can at least partially surround the optically active region.

In one embodiment of the method, the optically inactive region can be formed as at least one geometric edge of the optoelectronic component.

In one embodiment of the method, the curvature of the optically inactive region with respect to the image plane of the optoelectronic component can include a bending in and / or a Wegkrümmen at least a portion of the optically inactive area.

In one embodiment of the method, the curved, optically inactive region can be dimensionally stable after bending

be furnished.

In one embodiment of the method, the curving of the optically inactive region may be a heating of the optical

inactive area before bending.

In one embodiment of the method, curving the curved optically inactive region may include cooling the optically inactive region after bending.

In one embodiment of the method, an optically inactive region can be subdivided into a plurality of curvilinear, optically inactive regions before curving, for example by means of a removal of a

Area of the optically inactive area or a

Dividing the optically inactive area.

A division of the optically inactive region can

for example, a cutting, for example a

Cut, have the optically inactive area.

In one embodiment of the method, at least a region of the optically inactive region with respect to the optically active region can be curved by an angle in a range from approximately 5 ° to approximately 360 °,

for example, at an angle greater than or equal to

about 90 °.

In one embodiment of the method, the curved, optically inactive region may have or be set up in one of the following geometric shapes: a hook, for example, a barb, an eyelet, a hole, a pin, a pin, a tongue.

In one embodiment of the method, the

Optoelectronic device are formed such that the optically inactive region is electrically connected to the optically active region.

In one embodiment of the method, the optically inactive region can be set up such that the optically active region is electrically contacted by means of the conclusive connection.

In one embodiment of the method, the optically inactive region can be formed such that the

conclusive connection a mechanical fixation and / or electrical contacting of the optoelectronic

Component forms. In one embodiment of the method, the carrier of the optically active region may be mechanically flexible, for example bendable.

In one embodiment of the method, the

Optoelectronic device having at least two optically inactive regions.

In one embodiment of the method, the at least two optically inactive regions can be curved differently.

In one embodiment of the method, the curvatures of at least two optically inactive regions can be set up complementary to one another. In one embodiment of the method, the optoelectronic component can be formed as an organic light-emitting diode and / or organic solar cell. In various embodiments, a

Optoelectronic component device provided, the optoelectronic component device comprising: an optoelectronic component according to one of the above-described embodiments of an optoelectronic component and a holder for mechanically fixing and / or electrical contacting of the optoelectronic component.

In one embodiment of the optoelectronic

Component device may be an optical component in

Beam path of the electromagnetic radiation received by the optoelectronic component and / or

is provided, be formed, for example, be arranged.

In one embodiment of the optoelectronic

Component device, the optical component, a lens, such as a microlens array (microlense array); a filter, for example a color filter, for example a UV protection or a

 Polarizing filter; a retardation plate or a wavelength converter or the like.

In one embodiment of the optoelectronic

Component device, the optical component can be fixed to the holder.

In one embodiment of the optoelectronic

Component device, the holder may be configured as a part of the optical component. In one embodiment of the optoelectronic

Component device may be the opto-electronic

Component device further comprise at least one electronic component of the optoelectronic component. The electronic components can, for example

 Have drive electronics of the optoelectronic component, for example, AC / DC converter and / or DC / DC converter, dimmer, for example, phase dimmer. In one embodiment of the optoelectronic

 Component device, the optically active region and the optically inactive region are arranged relative to each other so that between them a cavity is formed; wherein the electronic component is disposed in the cavity.

In one embodiment of the optoelectronic

Component device, the holder for electrically contacting the optically active region of

be set up optoelectronic component.

In one embodiment of the optoelectronic

Component device, the holder may be configured as a bus system of the optoelectronic component.

In one embodiment of the optoelectronic

 The device device may include the holder as a region of an optically inactive region of another

be arranged optoelectronic component,

for example, an adjacent optoelectronic

 Component, for example, by the curved, optically inactive areas of the optoelectronic components are at least partially complementary to each other.

In one embodiment of the optoelectronic

Component device, the holder may have a shape from the group of forms: a rail, such as a DI (DIN: German industrial standard) rail, a channel, such as a cable channel, a clamping device or the like.

In one embodiment of the optoelectronic

 Component device, the holder may be configured such that different electrical potentials are applied to the plurality of curved, optically inactive regions.

In one embodiment of the optoelectronic

 Component device, the holder may be configured such that a plurality of optoelectronic components

 are simultaneously connected conclusively to the holder.

In one embodiment of the optoelectronic

 Component device, the holder may be formed at least partially complementary to the optoelectronic device, for example, complementary to the curved, optically inactive region.

In one embodiment of the optoelectronic

 Component device may be the opto-electronic

 Device be configured as organic lighting and / or organic solar cell.

Embodiments of the invention are illustrated in the figures and are explained in more detail below.

Show it

Figure 1 is a schematic cross-sectional view of an optoelectronic component, according to various embodiments; Figure 2a-d schematic views optoelectronic

Components, according to different

 configurations;

Figure 3a-c are schematic cross-sectional views

 optoelectronic components, according to various embodiments;

Figure 4a-b are schematic cross-sectional views of a

 optoelectronic component, according to various embodiments; and

Figure 5 is a schematic cross-sectional view

 Optoelectronic devices, according to various embodiments.

In the following detailed description, reference is made to the accompanying drawings, which form a part hereof and in which is by way of illustration specific

Embodiments are shown in which the invention can be practiced. In this regard will

Directional terminology such as "top", "bottom", "front", "back", "front", "rear", etc. used with reference to the orientation of the described figure (s). Because components of embodiments in a number

different orientations can be positioned, the directional terminology is illustrative and i in no way limiting. It should be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. It should be understood that the features of the various exemplary embodiments described herein may be combined with each other unless specifically stated otherwise. The following detailed description is not intended to be construed in a limiting sense, and that Scope of the present invention is defined by the appended claims.

In the context of this description, the terms

"connected", "connected" and "coupled" used to describe both a direct and indirect connection, a direct or indirect connection and a direct or indirect coupling. In the figures, identical or similar elements are provided with identical reference numerals, as appropriate.

Fig.l shows a schematic cross-sectional view of an optoelectronic component, according to various

Exemplary embodiments.

The optoelectronic component 100, for example, an electronic component 100 providing electromagnetic radiation, for example a light-emitting

Component 100, for example in the form of an organic light-emitting diode 100, may have a carrier 102. Of the

 Carrier 102 may be used, for example, as a support for electronic elements or layers, for example

light-emitting elements, serve. For example, the carrier 102 may include or be formed from glass, quartz, and / or a semiconductor material or any other suitable material. Further, the carrier 102 may be a

Plastic film or a laminate with one or more plastic films or be formed from it. The plastic may be one or more polyolefins (eg, high or low density polyethylene (PE) or

 Polypropylene (PP)) or be formed therefrom.

Furthermore, the plastic may be polyvinyl chloride (PVC), polystyrene (PS), polyester and / or polycarbonate (PC),

 Polyethylene terephthalate (PET), polyethersulfone (PES) and / or polyethylene naphthalate (PEN) or be formed therefrom. The carrier 102 may be one or more of the above

have mentioned substances. The carrier 102 may include or be formed from a metal or metal compound, such as copper, silver, gold, platinum, or the like.

A carrier 102 comprising a metal or a

Metal compound may also be formed as a metal foil or a metal-coated foil. The carrier 102 may be translucent or even transparent.

The term "translucent" or "translucent layer" can be understood in various embodiments that a layer is permeable to light,

for example, for the light generated by the light emitting device, for example one or more

Wavelength ranges, for example, for light in one

Wavelength range of the visible light (for example, at least in a partial region of the wavelength range of 380 nm to 780 nm). For example, the term "translucent layer" in various embodiments is to be understood to mean that substantially all of them are in one

Structure (for example, a layer) coupled

Quantity of light is also coupled out of the structure (for example, layer), wherein a portion of the light can be scattered in this case

The term "transparent" or "transparent layer" can be understood in various embodiments that a layer is transparent to light

(For example, at least in a portion of the

Wavelength range from 380 nm to 780 nm), wherein light coupled into a structure (for example a layer) is coupled out of the structure (for example layer) substantially without scattering or light conversion.

Thus, "transparent" in different Embodiments as a special case of "translucent" to look at.

In the event that, for example, a light-emitting monochromatic or limited in the emission spectrum

is to be provided electronic component, it is sufficient that the optically translucent layer structure at least in a partial region of the wavelength range of the desired monochrome light or for the limited

Emission spectrum is translucent.

In various embodiments, the organic light emitting diode 100 (or else the light emitting devices according to the above or hereinafter described

Embodiments) may be configured as a so-called top and bottom emitter. A top and / or bottom emitter can also be used as an optically transparent component,

For example, a transparent organic light emitting diode, be designated.

On or above the carrier 102 may be in different

Embodiments optionally be arranged a barrier layer 104. The barrier layer 104 may include or consist of one or more of the following: alumina, zinc oxide, zirconia, titania,

 Hafnium oxide, tantalum oxide, lanthanum oxide, silicon oxide,

Silicon nitride, silicon oxynitride, indium tin oxide,

Indium zinc oxide, aluminum-doped zinc oxide, as well

Mixtures and alloys thereof. Furthermore, the

The barrier layer 104 in various embodiments have a layer thickness in a range of about 0.1 nm (one atomic layer) to about 5000 nm, for example, a layer thickness in a range of about 10 nm to about 200 nm, for example, a layer thickness of about 40 nm.

On or above the barrier layer 104, an electrically active region 106 of the light-emitting component 100 be arranged. The electrically active region 106 may be understood as the region of the light emitting device 100 in which an electric current is used to operate the

light emitting device 100 flows. In various exemplary embodiments, the electrically active region 106 may have a first electrode 110, a second electrode 114 and an organic functional layer structure 112, as will be explained in more detail below. Thus, in various embodiments, on or above the barrier layer 104 (or, if the barrier layer 104 is not present on or above the carrier 102), the first electrode 110 (eg, in the form of a first

Electrode layer 110) may be applied. The first electrode 110 (hereinafter also referred to as lower electrode 110) may be formed of or be made of an electrically conductive substance, such as a metal or a conductive conductive oxide (TCO) or a layer stack of multiple layers of the same metal or different metals and / or the same TCO or different TCOs. Transparent conductive oxides are transparent, conductive substances, for example

Metal oxides, such as zinc oxide, tin oxide,

Cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO). In addition to binary metal oxygen compounds, such as, for example, ZnO, SnO 2, or Ιη 2 O 3, ternary metal oxygen compounds, such as AlZnO, for example, include

Zn2SnO4, CdSnO3, ZnSnO3, Mgln204, GalnO3, Zn2In20s or

In4Sn30] _2 or mixtures of different transparent conductive oxides to the group of TCOs and can be used in various embodiments.

Furthermore, the TCOs do not necessarily correspond to one

stoichiometric composition and may also be p-doped or n-doped.

In various embodiments, the first

Electrode 110 comprises a metal; for example, Ag, Pt, Au, Mg, Al, Ba, In, Ag, Au, Mg, Ca, Sm or Li, as well as

Compounds, combinations or alloys of these substances.

In various embodiments, the first

Electrode 110 may be formed by a stack of layers of a combination of a layer of a metal on a layer of a TCO, or vice versa. An example is one

Silver layer deposited on an indium tin oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO multilayers.

In various embodiments, the first

Electrode 110 one or more of the following substances

alternatively or additionally to the abovementioned substances: networks of metallic nanowires and particles, for example of Ag; Networks of carbon nanotubes; Graphene particles and layers; Networks of semiconducting nanowires.

Furthermore, the first electrode 110 may comprise electrically conductive polymers or transition metal oxides or electrically conductive transparent oxides.

In various embodiments, the first

Electrode 110 and the carrier 102 may be translucent or transparent. In the case where the first electrode 110 comprises or is formed from a metal, the first electrode 110 may have, for example, a layer thickness of less than or equal to approximately 25 nm, for example one

Layer thickness of less than or equal to approximately 20 nm,

For example, the first electrode 110 may have, for example, a layer thickness of greater than or equal to approximately 10 nm, for example a layer thickness of greater than or equal to approximately 15 nm

Embodiments, the first electrode 110 a

Layer thickness in a range of about 10 nm to about 25 nm, for example, a layer thickness in one Range of about 10 nm to about 18 nm, for example, a layer thickness in a range of about 15 nm to about 18 nm. Further, in the case where the first electrode 110 has or is formed of a conductive transparent oxide (TCO) For example, the first electrode 110 may have a layer thickness in a range of about 50 nm to about 500 nm, for example, a layer thickness in a range of about 75 nm to about 250 nm, for example, a layer thickness in a range of

about 100 nm to about 150 nm.

Furthermore, if the first electrode 110 is made of, for example, a network of metallic nanowires, for example of Ag, which may be combined with conductive polymers, a network of carbon nanotubes, which may be combined with conductive polymers, or of graphene. Layers and composites are formed, the first electrode 110, for example, a

 Layer thickness in a range of about 1 nm to about 500 nm, for example, a layer thickness in a range of about 10 nm to about 400 nm,

For example, a layer thickness in a range of

about 40 nm to about 250 nm.

The first electrode 110 can be used as the anode, ie as

hole-injecting electrode may be formed or as

Cathode, that is as an electron-injecting electrode.

The first electrode 110 may be a first electrical

Contact pad, to which a first electrical

Potential (provided by a power source (not shown), for example, a power source or a voltage source) can be applied. Alternatively, the first electrical potential may be applied to the carrier 102 and then indirectly to the first electrode 110 be created or be. The first electrical potential may be, for example, the ground potential or another predetermined reference potential. Furthermore, the electrically active region 106 of the

light emitting device 100 is an organic

functional layer structure 112, which is applied on or above the first electrode 110 or

is trained.

The organic functional layer structure 112 may comprise one or more emitter layers 118, for example with fluorescent and / or phosphorescent emitters, and one or more hole line layers 116 (also referred to as hole transport layer (s) 120). In

According to various embodiments, alternatively or additionally, one or more electron conduction layers 116 (also referred to as electron transport layer (s) 116) may be provided.

Examples of emitter materials used in the

light emitting device 100 according to various

Embodiments of Emitter Layer (s) 118

organic or organic

organometallic compounds, such as derivatives of polyfluorene, polythiophene and polyphenylene (eg 2- or 2,5-substituted poly-p-phenylenevinylene) and metal complexes, for example iridium complexes such as blue-phosphorescent FIrPic (bis (3,5-difluoro-2- (bis 2-pyridyl) phenyl- (2-carboxypyridyl) -iridium III), green phosphorescent

Ir (ppy) 3 (tris (2-phenylpyridine) iridium III), red

Phosphorus Ru (dtb-bpy) 3 * 2 (PFg) (tris [4, 4'-di-tert-butyl- (2, 2 ') -bipyridine] ruthenium (III) complex) and blue-fluorescent DPAVBi (4, 4 Bis [4- (di-p-tolylamino) styryl] biphenyl), green fluorescent TTPA

(9, 10-bis [N, -di- (p-tolyl) -amino] anthracene) and red

fluorescent DCM2 (4-dicyanomethylene) -2-methyl-6- j ulolidyl-9-enyl-4H-pyran) as a non-polymeric emitter. Such non-polymeric emitters can be deposited by means of thermal evaporation, for example. Furthermore, can

Polymer emitters are used, which in particular by means of a wet chemical process, such as a spin-on process (also referred to as spin coating), are deposited.

The emitter materials may be suitably embedded in a matrix material.

It should be noted that other suitable

Emitter materials are also provided in other embodiments.

The emitter materials of the emitter layer (s) 118 of the

For example, light emitting device 100 may be selected so that light emitting device 100 emits white light. The emitter layer (s) 118 may include a plurality of emitter materials of different colors (for example blue and yellow or blue, green and red)

Alternatively, the emitter layer (s) 118 may be constructed of multiple sublayers, such as a blue fluorescent emitter layer 118 or blue

phosphorescent emitter layer 118, a green

phosphorescent emitter layer 118 and a red

phosphorescent emitter layer 118. By mixing the different colors, the emission of light can result in a white color impression. Alternatively, it can also be provided to arrange a converter material in the beam path of the primary emission generated by these layers, which at least partially absorbs the primary radiation and emits secondary radiation of a different wavelength, so that from a (not yet white) primary radiation by the combination of primary radiation and secondary Radiation produces a white color impression. The organic functional layer structure 112 may generally include one or more electroluminescent layers. The one or more electroluminescent

Layers may or may include organic polymers, organic oligomers, organic monomers, organic small, non-polymeric molecules ("small molecules") or a combination of these materials. For example, the organic functional layer structure 112 may be one or more

have electroluminescent layers, which as

Hole transport layer 120 is or are, so that, for example, in the case of an OLED an effective

Hole injection into an electroluminescent layer or an electroluminescent region is made possible.

Alternatively, in various embodiments, the organic functional layer structure 112 may include one or more functional layers, which may be referred to as a

Electron transport layer 116 is executed or are, so that, for example, in an OLED an effective

Electron injection into an electroluminescent layer or an electroluminescent region is made possible. As a substance for the hole transport layer 120 can

For example, tertiary amines, carbazole derivatives, conductive polyaniline or Polyethylendioxythiophen be used. In various embodiments, the one or more electroluminescent layers may or may not be referred to as

be carried out electroluminescent layer.

In various embodiments, the

Hole transport layer 120 may be deposited on or over the first electrode 110, for example, deposited, and the emitter layer 118 may be on or above the

Hole transport layer 120 may be applied, for example, be deposited. In various embodiments, electron transport layer 116 may be deposited on or over the emitter layer 118, for example, deposited. In various embodiments, the organic functional layer structure 112 (that is, for example, the sum of the thicknesses of hole transport layer (s) 120 and

Emitter layer (s) 118 and electron transport layer (s) 116) have a maximum thickness of approximately 1.5 μm, for example a maximum thickness of approximately 1.2 μm, for example a maximum layer thickness of approximately 1 μm, for example a maximum layer thickness of approximately 800 μm nm, for example a layer thickness of at most approximately 500 nm, for example a layer thickness of at most approximately 400 nm, for example a layer thickness of approximately approximately 300 nm. In various exemplary embodiments, the organic functional layer structure 112 may include a

Stack of several directly stacked

have organic light-emitting diodes (OLEDs), wherein each OLED may for example have a layer thickness of at most about 1.5 ym, for example, a layer thickness of at most about 1.2 ym, for example, a layer thickness of at most about 1 ym, for example, a layer thickness of about 800 or more nm, for example a layer thickness of at most approximately 500 nm, for example a layer thickness of at most approximately 400 nm, for example a layer thickness of approximately approximately 300 nm. In various exemplary embodiments, the organic functional layer structure 112

For example, have a stack of two, three or four directly superposed OLEDs, in which case, for example, organic functional layer structure 112 may have a layer thickness of at most about 3 ym. Optionally, the light emitting device 100 may generally include other organic functional layers, for example

arranged on or over one or more

Emitter layers 118 or on or over the or the

Electron transport layer (s) 116, which serve to further improve the functionality and thus the efficiency of the light-emitting device 100. On or above the organic functional layer structure 112 or optionally on or above the one or more further organic functional layers

Layer structures may be the second electrode 114

(for example in the form of a second electrode layer 114) may be applied.

In various embodiments, the second

Electrode 114 have the same substances or be formed from it as the first electrode 110, wherein in

various embodiments metals are particularly suitable.

In various embodiments, the second

Electrode 114 (for example, in the case of a metallic second electrode 114), for example, have a layer thickness of less than or equal to about 50 nm,

for example, a layer thickness of less than or equal to approximately 45 nm, for example a layer thickness of less than or equal to approximately 40 nm, for example a layer thickness of less than or equal to approximately 35 nm, for example a layer thickness of less than or equal to approximately 30 nm,

For example, a layer thickness of less than or equal to about 25 nm, for example, a layer thickness of less than or equal to about 20 nm, for example, a layer thickness of less than or equal to about 15 nm, for example, a layer thickness of less than or equal to about 10 nm.

The second electrode 114 may generally be formed similarly to, or different from, the first electrode 110. The second electrode 114 may be made of one or more embodiments in various embodiments

be formed of a plurality of substances and with the respective layer thickness, or as described above in connection with the first electrode 110. In different

Embodiments, the first electrode 110 and the second electrode 114 are both translucent or transparent educated. Thus, the shown in Fig.l

light emitting device 100 may be formed as a top and bottom emitter (in other words, as a transparent light emitting device 100).

The second electrode 114 can be used as the anode, ie as

hole-injecting electrode may be formed or as

Cathode, that is as an electron-injecting electrode. The second electrode 114 may have a second electrical connection to which a second electrical connection

Potential (which is different from the first one)

electric potential) provided by the

Energy source, can be applied. The second electrical potential may, for example, have a value such that the

Difference from the first electrical potential has a value in a range of about 1.5 V to about 20 V, for example, a value in a range of about 2.5 V to about 15 V, for example, a value in a range of about 3 V. up to about 12 V.

On or above the second electrode 114 and thus on or above the electrically active region 106 may optionally be an encapsulation 108, for example in the form of a

Barrier thin film / thin film encapsulation 108 are formed or be.

In the context of this application, a "barrier thin film" 108 or a "barrier thin film" 108 can be understood to mean, for example, a layer or a layer structure which is suitable for providing a barrier to chemical contaminants or atmospheric substances, in particular to water (moisture). and oxygen, to form. In other words, the barrier film 108 is formed to be resistant to OLED damaging materials such as

Water, oxygen or solvents can not or at most be penetrated to very small proportions. According to an embodiment, the barrier thin-film layer 108 may be formed as a single layer (in other words, as

Single layer) may be formed. According to an alternative embodiment, the barrier thin-film layer 108 may comprise a plurality of sub-layers formed on one another. In other words, according to one embodiment, the

Barrier thin film 108 as a stack of layers (stack)

be educated. The barrier film 108 or one or more sublayers of the barrier film 108 may be formed by, for example, a suitable deposition process, e.g. by means of a

 Atomic Layer Deposition (ALD) according to one embodiment, e.g. plasma-enhanced atomic layer deposition (PEALD) or plasmaless

Atomic deposition method (Plasma-less Atomic Layer

Deposition (PLALD)), or by means of a chemical

Gas phase deposition process (Chemical Vapor Deposition

(CVD)) according to another embodiment, e.g. one

plasma enhanced chemical vapor deposition (PECVD) or plasmaless vapor deposition (plasma-less

Chemical Vapor Deposition (PLCVD)), or alternatively by other suitable deposition methods.

By using an atomic layer deposition process (ALD) very thin layers can be deposited. In particular, layers can be deposited whose layer thicknesses are in the atomic layer region.

According to one embodiment, in a

Barrier thin film 108 having multiple sub-layers, all sub-layers are formed by an atomic layer deposition process. A layer sequence comprising only ALD layers may also be referred to as "nanolaminate". According to an alternative embodiment, in a

Barrier thin film 108 having a plurality of sublayers, one or more sublayers of the barrier thin film 108 by a deposition method other than one

Atomic layer deposition processes are deposited,

for example by means of a gas phase separation process.

The barrier film 108 may, in one embodiment, have a film thickness of about 0.1 nm (one atomic layer) to about 1000 nm, for example, a film thickness of about 10 nm to about 100 nm according to a

Embodiment, for example, about 40 nm according to an embodiment. According to an embodiment, in which the barrier thin film

108 has multiple partial layers, all partial layers may have the same layer thickness. According to another

Design, the individual sub-layers of

Barrier thin layer 108 have different layer thicknesses. In other words, at least one of

 Partial layers have a different layer thickness than one or more other of the sub-layers.

The barrier thin-film layer 108 or the individual partial layers of the barrier thin-film layer 108 may, according to one embodiment, be formed as a translucent or transparent layer. In other words, the barrier film 108 (or the individual sub-layers of the barrier film 108) may be made of a translucent or transparent substance (or mixture that is translucent or transparent).

According to one embodiment, the barrier thin-film layer 108 or (in the case of a layer stack having a plurality of partial layers) one or more of the partial layers of the

Barrier thin layer 108 include or may be formed from any of the following: alumina, zinc oxide, zirconia, titania, hafnia, tantalum oxide Lanthanum oxide, silicon oxide, silicon nitride,

Silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum ^¬ doped zinc oxide, and mixtures and alloys

the same. In various embodiments, the barrier thin film 108 or (in the case of a

 Layer stack with a plurality of sub-layers) one or more of the sub-layers of the barrier layer 108 have one or more high-index materials, in other words, one or more high-level materials

Refractive index, for example with a refractive index of at least 2.

In one embodiment, the cover 126, for example made of glass, for example by means of a frit bonding / glass soldering / seal glass bonding applied by means of a conventional glass solder in the geometric edge regions of the organic optoelectronic device 100 with the barrier layer 108 become. In various embodiments, on or above the barrier thin film 108, an adhesive and / or a

Protective varnish 124 may be provided, by means of which, for example, a cover 126 (for example, a glass cover 126) attached to the barrier thin layer 108, for example, is glued. In various embodiments, the optically translucent layer of adhesive and / or

Protective varnish 124 has a layer thickness of greater than 1 ym

have, for example, a layer thickness of several ym. In various embodiments, the adhesive may include or be a lamination adhesive.

In the layer of the adhesive (also referred to as

Adhesive layer) can be embedded in various embodiments still light scattering particles, which contribute to a further improvement of the color angle distortion and the

Can lead outcoupling efficiency. In different

Embodiments may be used as light-scattering particles For example, be provided as scattering dielectric materials such as metal oxides such as silica (SiO 2), zinc oxide (ZnO), zirconium oxide (ZrO 2), indium-tin oxide (ITO) or indium-zinc oxide (IZO), gallium oxide (Ga20a)

Alumina, or titania. Other particles may also be suitable, provided that they have a refractive index which is different from the effective refractive index of the matrix of the translucent layer structure, for example air bubbles, acrylate or glass hollow spheres. Furthermore, for example, metallic nanoparticles, metals such as gold, silver, iron nanoparticles, or the like can be provided as light-scattering particles.

In various embodiments, between the second electrode 114 and the layer of adhesive and / or protective lacquer 124, an electrically insulating layer

(not shown) are applied or be

For example, SiN, for example, with a layer thickness in a range of about 300 nm to about 1.5 ym, for example, with a layer thickness in a range of about 500 nm to about 1 ym to protect electrically unstable materials, for example during a

wet-chemical process. In various embodiments, the adhesive may be configured such that it itself has a refractive index that is less than the refractive index of the refractive index

Cover 126. Such an adhesive may be, for example, a low-refractive adhesive such as a

Acrylate having a refractive index of about 1.3. Furthermore, a plurality of different adhesives may be provided which form an adhesive layer sequence.

It should also be noted that in various

Embodiments also completely on an adhesive 124 can be dispensed with, for example in embodiments in which the cover 126, for example made of glass, by means of For example, plasma spraying may be applied to the barrier film 108.

In various embodiments, the / may

Cover 126 and / or the adhesive 124 have a refractive index (for example, at a wavelength of 633 nm) of 1.55.

Furthermore, in various embodiments

additionally one or more antireflection coatings

(for example combined with the encapsulation 108,

for example, the barrier thin film 108) in the

be provided light emitting device 100. In the description of FIGS. 2 to 5, the layers above or on the carrier 102 can be understood as optically active layer structure 128.

The optically active region 202 (not shown) may include the optically active layer structure 128 and the carrier 102.

The optically active layer structure 128 may comprise at least the organically functional layer structure 112 or the electrically active region 106. Further layers, for example the encapsulation 114, may be optional.

In the description of FIGS. 2 to 5, the optically inactive region 204 (not illustrated) may have a similar layer cross-section as the optically active region 202, for example the same carrier 102

exhibit .

In one embodiment, the optically inactive region 204 may be like the optically active region 202 for recording or

Be prepared to provide electromagnetic radiation. The portion of the electromagnetic radiation received by the optically inactive region 204 and / or in the image plane of the optically active region 202

but can be very small with respect to the provided electromagnetic radiation in the image plane of the optically active region. As a result, an optically frangible (rimless in the sense of optically inactive / non-visible edge) optoelectronic component 100

be formed.

2a-d show schematic views of optoelectronic components, according to various embodiments. 2a shows an optoelectronic device according to a

Embodiment of the descriptions of Fig. 1 with an optically active region 202 and an optically inactive region 204 in a geometric planar state. For example, the optically inactive region 204 may include one or more electrically isolated or contiguous conductive regions, such as a leadframe or flexPCB; or have multiple contact pads.

The electrically conductive regions of the optically inactive region 204 may be configured to electrically contact the optically active region 202,

For example, be electrically connected to the optically active region 202.

A part of the optically inactive region 204 may

for example, with a first electrode 206 and another part of the optically inactive region 204 with a second electrode 208, be electrically connected or, for example, with an external voltage source, For example, by means of a holder according to one of

Embodiments of the descriptions of Figure 3 to Fig.5.

Fig.2b shows an embodiment of the optoelectronic

Component of Fig. 2a in a state in which a

 Area of the optically inactive area 204 is curved.

The optically inactive region 204 may be, for example

are curved with respect to the optically active region 202, for example, be bent - indicated by the arrows 212nd

The image plane of the optoelectronic component can be arranged such that the electromagnetic radiation provided by the optoelectronic component is anti-parallel to the folding direction 212 of the optical system

is provided in the inactive region 204 - indicated by the arrow 210. The optoelectronic component 100 may be formed in the optically active region, for example as a bottom emitter, top emitter or a transparent, optoelectronic device. The optoelectronic component may be formed such that the carrier 102 and / or the optically inactive

Region 204 after bending 212 are arranged dimensionally stable. Fig.2c shows a further embodiment of a

Optoelectronic component, which has, for example due to manufacturing an optically inactive region 204 which completely surrounds the optically active region 202. The optically inactive region 204 may, for example, be curved at several regions, that is to say have a plurality of convolutions. In one embodiment, the optically inactive region 204 can be subdivided into several subregions, for example cut in-indicated by the dashed lines 222. The subregions of the optically inactive region can be configured or formed such that they can be curved independently of one another, for example by means of Cutting the carrier 102 along the lines 222. The plurality of curved portions of the optically inactive

Region 204 may, for example, each have electrically conductive regions, for example having exposed contact pads. To the several curved areas of the optically inactive

Area 204 may be applied or formed different electrical potentials.

In one embodiment, for example

opposite curved regions of the optically inactive region 204 have an approximately equal electrical potential, indicated by means of the electrical contacts 206, 208. As a result, for example by means of a series connection of a plurality of optoelectronic components, for example, an OLED multi-module can be realized, wherein the OLED multi - Module has no or only a small proportion of optically inactive areas in the visible range. FIG. 2d shows an embodiment of the optoelectronic

Component of Fig. 2c in a state in which a plurality of regions of the optically inactive region 204 are curved. The optically inactive regions 204 may be curved such that the proportion of the optically active

Area 202 at the "visible" surface of the

optoelectronic component is increased, can be provided by the electromagnetic radiation 210 and / or recorded.

In one embodiment, the optically inactive region 204 may be configured as a non-luminous projection 204 of a flexible OLED 100. The non-luminous projection 204 can be curved, for example, by approximately 90 °,

for example, be bent.

In other words, the curved optically inactive region 204 may form a tongue with respect to the optically active region.

3a-c show schematic cross-sectional views

optoelectronic devices, according to various

Embodiments.

3a shows a curved region of the optically inactive region 204 of an optoelectronic component, for example according to one of the embodiment of FIG

Descriptions of Fig.l, for example according to a

Embodiment of the descriptions of FIG. 2.

The optoelectronic component may, for example, be designed as a bottom emitter and provide electromagnetic radiation through the carrier 102 - indicated by the arrow 210. The optically active region 202 may be delimited from the optically inactive region 204, for example, in the optically inactive region 204 none optically active layer structure 128, for example, no electrically active region 106, for example, no organic functional layer structure 112 - delimitation to the optically active region is indicated by the dashed line 302.

In one embodiment, an optically inactive region 204 may correspond to a geometric edge region of the carrier 102. In one embodiment, an electrically conductive, optically inactive region 204 can be realized, for example, as an electrically conductive carrier 102, for example similar to a leadframe, a flexible one

Printed circuit board (flexPCB), a metal foil or a

electrically insulating film, which is an electrical

conductive substance or an electrically conductive

Mixture comprising, for example, a metallized plastic film. The curved optically inactive region 204 can be fixed in a conclusive manner by a holder 304 or be, for example frictionally, positively and / or materially bonded, for example, the holder 304 may comprise a clamping device (shown) or be configured as a clamping device.

In one embodiment, the holder 304 may be electrically powered

conductive and the optically inactive region 204

having electrically conductive region, for example, have exposed contact pads.

The exposed contact pads of the optically inactive region may be electrically connected to one or more regions of the optically active region, such as first electrode 116 or second electrode 120. The electrically conductive region of the optically inactive

Area 204 and the electrically conductive holder 304 may have a physical contact. As a result, in addition to the mechanical fixation of the optoelectronic

Component by means of the holder 304 an electrical

 Contacting the optically active region 202 can be realized by means of the optically inactive region 204 and the holder 304. By means of the curvature 212 of the optically inactive region 204, the proportion of the optically inactive region 204 in the visible region of the optoelectronic component can be reduced. The visible area may be considered the surface of the

Optoelectronic component can be understood, received by the electromagnetic radiation and / or

provided. 3b shows a plurality of optoelectronic components 312, 314, 316 which are arranged next to each other and in the region of the curved, optically inactive regions 204 of FIG

Optoelectronic devices 312, 314, 316 are in physical contact with each other, that is, are arranged side by side.

The optoelectronic components 312, 314, 316 can by means of the holder 304, for example by means of

Clamping devices 304, mechanically together or

be fixed to each other and / or electrically contacted, for example, be electrically connected in series.

The mechanical fixing of the optoelectronic components 312, 314, 316 may, for example, by means of the friction of the optically inactive regions 204 of the optoelectronic

Component 312, 314, 316 are reinforced. The holder 304 may be configured such that the stiction of the optically inactive regions 204 between the

optoelectronic devices 312-314, 314-316, which are in physical contact, for example, in that the holder 304 has a sprung device or is set up as such. When increasing the distance of the sprung device, such as the

Clamping device 304, for example, when introducing the curved, optically inactive regions 204 of the adjacent optoelectronic devices 312, 314, 316 in the

Clamping device 304, can be a restoring force

be formed, which the contact pressure of the

increased physical contact standing optoelectronic devices. This allows the mechanical fixation of

optoelectronic components 312, 314, 316 are increased.

In other words, the tongues 204, i. the optical

inactive regions 204, multiple optoelectronic

Components can be introduced into the clamping device of a holder 304.

Depending on the arrangement of the contact metallizations, for example according to the description of FIG. 2, on or above the optically inactive regions 204, for example on or above the carrier 102, an OLED multi-module with a plurality of interconnected, for example, technically simple manner

optoelectronic components 312, 314, 316 are realized.

3c shows, similar to the configuration of FIG. 3b, a plurality of optoelectronic components 322, 324, 326 with curved, optically inactive regions 204, which are mechanically fixed by means of holder 304 and / or electrically contacted.

Notwithstanding the embodiment of the description Fig.3b, the optically inactive region 204 with respect to the optically active region 202 by an angle larger or smaller be bent or be about 90 °, for example, about 120 ° (shown).

Furthermore, the optoelectronic components 322, 324, 326 can be configured as a top emitter (shown).

Furthermore, the holder 304 or the holders 304 may be configured, for example, similar to a rail and by means of the positive connection of the optoelectronic devices, which are connected to a holder 304, to the

optoelectronic components or by means of

optoelectronic components are fixed.

A frictional connection of a holder 304 with

a plurality of optically inactive regions 204 of directly adjacent optoelectronic components can by means of a clamping configuration of the holder 304 and the optically inactive

Areas 204 are realized - indicated by means of

Arrows 328.

In other words, in one embodiment, the holder 304 may not be configured to be self-supporting, but rather be fixed by means of the conclusive connection with a plurality of optoelectronic components.

4a-b show schematic cross-sectional views of an optoelectronic component, according to various

Embodiments. 4a shows an optoelectronic component similar to an embodiment of the description 100 with curved optically inactive regions 204 before the application of the

optoelectronic component on a holder 402. The curved, optically inactive regions 204 of

Optoelectronic component, for example

with respect to the optically active region 202, a curvature greater than 90 °. This can be done after the

Applying the optoelectronic component to the holder 402 of the optically inactive region 204 form a frictional connection with the holder 402.

The holder 402 may, for example, have an at least partially complementary shaped region which results in a positive connection with the optoelectronic

Component, for example, the curved optically inactive region 204, is set up.

In one embodiment, the holder 402 may be configured, for example, as an adapter 402 or socket 402. In one embodiment, the holder 402 may have electrically conductive regions, for example contact pads, in the region of the physical contact with the optoelectronic component, for example the optically inactive region 204. The electrically conductive regions 404 of the holder 402 may, for example, as electrodes 404 and / or

Contact pads 404 may be configured for electrically contacting the optically active region 202 of the optoelectronic component.

In one embodiment, the optoelectronic component can be designed, for example, as a top emitter and applied to or via a holder 402. FIG. 4b shows an optoelectronic component according to FIG

various embodiments, which provides electromagnetic radiation - indicated by means of the arrow 210, in physical contact with a holder 402. The

Holder 402 may, for example, be configured similar to holder 402 of FIG. 4a. The optoelectronic component can, for example, similar to one of the embodiments of Irradiation Fig. 1, for example, as a top emitter.

The optoelectronic component may be on or above the

Holder 402 mechanically fixed and / or electrically contacted. Mechanical fixing and / or electrical

can contact by means of the positive connection and / or the adhesion of the optically inactive region with the at least partially complementary shaped portion of the

Holder 402 to be realized for positive connection.

5 shows a schematic cross-sectional view

optoelectronic devices, according to various

Embodiments.

Fig. 5 shows schematically a plurality of optoelectronic

For example, devices configured as top emitters that provide electromagnetic radiation in the direction of arrow 210.

In one embodiment, an optoelectronic component may have at least two optically inactive regions 204, wherein the at least two optically inactive regions 204 are curved differently, for example in the curved state a different geometric structure

exhibit .

In one embodiment, the differently curved, optically inactive regions 204 of an optoelectronic

Bauelementes be designed such that they

positive and / or non-positive connection with directly adjacent, similarly trained,

optoelectronic components are set up,

For example, complementary to each other are formed, for example, complementary to each other curved metal foils. This allows a lanyard-free, conclusive

Connections of a plurality of optoelectronic components 512, 514, 516 are realized with each other, for example, without a holding device, for example, similar to one

Embodiment of a holder of the descriptions of Figure 2, Figure 3 or Figure 4.

In other words, in one embodiment, similarly formed or furnished, adjacent

Optoelectronic components as a holder 304 for a

optoelectronic device act.

In various embodiments, a

Optoelectronic component, a method for producing an optoelectronic component and a

Optoelectronic component device provided with which it is possible to fix an optoelectronic device having a relatively larger optically active region, mechanically and electrically contact.

As a result, mechanically flexible OLEDs, for example, can be contacted and mechanically held. In addition, the edge area, that is to say the optically inactive area, of the OLEDs can be minimized, for example, toward a borderless modularization of larger illuminated areas. As a result, a higher fill factor of the luminous area can be realized.

In addition, the optoelectronic component can be contacted and fixed more easily. Furthermore, by means of the mechanical fixation, the optically active surface of

be stiffened optoelectronic component, whereby plannable or geometrically raised luminous surfaces, that is shaped luminous surfaces, can be realized.

Claims

claims 1. Optoelectronic component (100) comprising:  a carrier (102), an optically active region (202) and an optically inactive region (204) on or above the carrier (102),  Wherein the carrier (102) is at least partially curved in the optically inactive region (204);  • wherein the curved support (102) in the optical  inactive area (204) to a frictional Connecting or a folding connection of the optoelectronic component (100) is arranged. 2. The optoelectronic component (100) according to claim 1, wherein the optically active region (202) has an optically active layer structure (128). 3. Optoelectronic component (100) according to one of  Claims 1 or 2,  wherein the optically inactive region (204) at least partially surrounds the optically active region (202). 4. Optoelectronic component (100) according to one of  Claims 1 to 3,  wherein at least a portion of the optically inactive region (204) with respect to the image plane of the  optoelectronic component (100) is curved and / or bent away. 5. Optoelectronic component (100) according to one of  Claims 1 to 4, wherein the curvature of at least a portion of the curved optically inactive region (204) has an angle greater than or equal to about 90 ° with respect to the optically active region (202). Optoelectronic component (100) according to one of claims 1 to 5, wherein the optically inactive region (204) is such is arranged such that the optically active region (202) by means of the frictional connection or the Folding connection is contacted electrically. Optoelectronic component (100) according to one of claims 1 to 6, wherein the optically inactive region (204) is such is set up that the frictional connection or the folding connection a mechanical fixation and / or an electrical contact of the optoelectronic component (100) is formed. Optoelectronic component (100) according to one of claims 1 to 7, wherein the optoelectronic component (100) has at least two optically inactive regions (204), wherein the at least two optically inactive regions (204) have a different curvature. Optoelectronic component (100) according to one of claims 1 to 8, wherein the optoelectronic component (100) as an organic light emitting diode (100) and / or organic Solar cell (100) is set up. Method for producing an optoelectronic Device (100), the method comprising:  Forming an optoelectronic component  (100), wherein the optoelectronic component (100) has an optically active region (202) and an optically inactive region (204) on or above a carrier (102), Curving (212) of the carrier (102) in the optically inactive region (204) with respect to the carrier (102) in the optical active region (202), wherein the curved support (102) in the optically inactive region (204) for a frictional connection or a  Folding connection of the optoelectronic  Component (100) is set up. Method according to claim 10, wherein forming the optically active region (202) comprises forming an optically active layer structure (128) on or above the support (102). Method according to claim 11, wherein the optically inactive region (204) at least partially surrounds the optically active region (202). Method according to one of claims 10 to 12, wherein the curving (212) of the carrier (102) in the optically inactive region (204) with respect to the image plane of the optoelectronic component (100) comprises bending in and / or bending away at least a portion of the optically inactive region (204). Method according to one of claims 10 to 13, wherein the carrier is divided in the optically inactive region (204) before the curving (212) into a plurality of independently curvable carriers (102) in the optically inactive region (204), in particular by means of a Removing a portion of the carrier (102) in the optically inactive region (204) or dicing the carrier in the optically inactive region (204). Method according to one of claims 10 to 14, wherein at least a portion of the support (102) in the optically inactive region (204) is curved with respect to the support (102) in the optically active region (202) by an angle greater than or equal to about 90 °. Method according to one of claims 10 to 15, wherein the carrier (102) in the optically inactive region (204) is formed such that the frictional connection or the folding connection forms a mechanical fixation and / or an electrical contacting of the optoelectronic component (100). Method according to one of claims 10 to 16, wherein the optoelectronic component (100) as an organic light emitting diode (100) and / or organic Solar cell (100) is formed. Optoelectronic component device comprising: An optoelectronic component (100) according to one of claims 1 to 17; and  A holder (304, 402) for mechanically fixing and / or electrically contacting the  optoelectronic component (100). Optoelectronic component device according to Claim 18, further comprising: an optical component in the beam path of electromagnetic radiation emitted by the Optoelectronic component is received and / or provided. An optoelectronic component device according to claim 18 or 19, further comprising:  • at least one electronic component of the  optoelectronic component (100),  • wherein the optically active region (202) and the  optically inactive region (204) are arranged relative to each other so that a cavity is formed between them;  • wherein the electronic component is arranged in the cavity.