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WO2013100462A1 - Dispositif de traitement de substrat - Google Patents

Dispositif de traitement de substrat Download PDF

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Publication number
WO2013100462A1
WO2013100462A1 PCT/KR2012/011004 KR2012011004W WO2013100462A1 WO 2013100462 A1 WO2013100462 A1 WO 2013100462A1 KR 2012011004 W KR2012011004 W KR 2012011004W WO 2013100462 A1 WO2013100462 A1 WO 2013100462A1
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WO
WIPO (PCT)
Prior art keywords
gas
exhaust passage
exhaust
chamber
wall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2012/011004
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English (en)
Korean (ko)
Inventor
황희
이상진
김영준
김영효
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wonik IPS Co Ltd
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Wonik IPS Co Ltd
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Filing date
Publication date
Application filed by Wonik IPS Co Ltd filed Critical Wonik IPS Co Ltd
Publication of WO2013100462A1 publication Critical patent/WO2013100462A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

Definitions

  • the present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of suppressing generation of by-products caused by reaction between different gases.
  • ALD atomic layer deposition
  • the atomic layer deposition method is a method of separating and supplying each source gas to the substrate to form a thin film by the surface saturation of the source gases.
  • the principle of the atomic layer deposition method is briefly described as follows.
  • the first raw material gas is supplied into the chamber, the monoatomic layer is chemisorbed on the surface of the substrate through reaction with the surface of the substrate.
  • the first raw material gases of the monoatomic layer or more do not form a chemisorption state due to non-reactivity between the same ligands, and are in a physical adsorption state.
  • a purge gas is supplied, the first raw material gases in the physical adsorption state are removed by the purge gas.
  • the second layer grows through the substitution reaction between the ligands of the first raw material gas and the second raw material gas, and the second raw material gas that fails to react with the first layer They are in the state of physical adsorption and are removed by the purge gas. And the surface of this second layer is in a state capable of reacting with the first raw material gas.
  • the above process forms one cycle and the thin film is deposited by repetition of several cycles.
  • Such a method is a time division atomic layer deposition method performed by sequentially supplying and discharging process gas and purge gas, such as source gas and reaction gas, to a substrate mounted in a chamber, in which one or more substrates are mounted.
  • the thin film can be deposited by alternately and repeatedly supplying the process gas and the purge gas in a state where the substrate support is fixed.
  • the thin film is deposited while simultaneously supplying the process gas and the purge gas.
  • the gas injection bodies supplying the gas are formed so that the process gas and the purge gas are not mixed with each other so that the process gas and the purge gas are alternately supplied to the substrate.
  • the atomic layer deposition method is a space-division atomic layer deposition method, which allows a thin film to be deposited on a plurality of substrates while providing a relative rotation between the substrate support and the gas injector and simultaneously spraying the source gas and the reaction gas.
  • process gases such as source gas, reactant gas, and purge gas are sequentially supplied and discharged, so that source gas and reactant gas are mixed in the chamber or in the process of being exhausted. There is almost no.
  • process gases such as source gas, reaction gas, and purge gas are simultaneously supplied through the gas injector, and are discharged through one exhaust passage and exhaust port, so that the chamber except the upper part of the substrate is used.
  • Source gas and reaction gas are inevitably mixed inside or in the exhaust flow path and exhaust port.
  • by-products are reacted with each other between the source gas and the reaction gas, as well as between the plural source gas and the reaction gas and the reaction gas in the chamber space or the exhaust flow path. It can't be avoided.
  • the by-products thus formed are attached to the chamber or the exhaust passage to act as a pollutant, and in particular, there is a problem of degrading the quality of the thin film formed by being attached to the substrate in the process of depositing the thin film.
  • the by-products attached as described above are difficult to remove, requiring a lot of time and effort to remove them, and thus there is a problem in that process efficiency and productivity are lowered.
  • the present invention provides a substrate processing apparatus capable of preventing the generation of by-products due to mixing between process gases when the thin film is deposited in 1 turn 2 cycles in the space-division atomic layer deposition process.
  • the present invention provides a substrate processing apparatus capable of preventing the generation of by-products due to mixing between process gases when depositing three or more ternary thin films in a space-division atomic layer deposition process.
  • the present invention provides a substrate processing apparatus capable of depositing a thin film of excellent quality.
  • the present invention provides a substrate processing apparatus capable of improving process efficiency and productivity.
  • a substrate processing apparatus includes a first source gas region in which two source gas regions are supplied with a source gas supplied along a circumferential direction, and a reaction gas supplied in any one of these source gas regions.
  • a chamber which separates a region, the source gas regions and the first reaction gas region, and is divided into a plurality of purge gas regions to which purge gas is supplied, and a plurality of exhaust ports are formed;
  • a substrate support part rotatably installed in the chamber and having a plurality of substrates mounted thereon;
  • a gas injector installed on an upper surface of the space part to face the substrate support part, the gas injector including a plurality of gas injection units sealing the space part and injecting the gas into the respective gas regions;
  • a gas exhaust unit in which a reaction gas exhaust
  • the space part may further include a second reaction gas region in which the reaction gas is supplied in a purge gas region between the source gas region facing the first reaction gas region, and the gas spray body may include the second reaction gas.
  • the apparatus may further include a gas injection unit for injecting reaction gas into a region corresponding to the region, and the reaction gas exhaust passage may further include an exhaust hole for exhausting the reaction gas in a portion corresponding to the second reaction gas region.
  • any one of the source gas exhaust passage or the reaction gas exhaust passage is a first exhaust passage formed along the lower inner wall of the chamber, and the other of the source gas exhaust passage or the reaction gas exhaust passage is the first exhaust passage.
  • a second exhaust passage is formed adjacent to the flow passage, the first exhaust passage and the second exhaust passage may be connected to different exhaust ports.
  • the first exhaust passage, the first partition wall formed to be spaced apart from the lower inner wall of the chamber; And a first baffle having a plurality of first exhaust holes and connecting the upper surface of the first partition wall to the lower inner wall of the chamber, wherein the second exhaust flow path is formed on the first partition wall.
  • a second partition wall formed; And a second baffle formed with the plurality of second exhaust holes and connecting the upper surface of the second partition wall to the lower inner wall of the chamber.
  • Some of the plurality of second exhaust holes may be connected to the plurality of first exhaust holes through a first connecting pipe crossing the second exhaust passage, and the second exhaust passage may pass through the first baffle. It may be connected to the exhaust port via a second connecting pipe crossing the first exhaust passage.
  • first exhaust passage the first partition wall formed to be spaced apart from the lower inner wall of the chamber; And a first baffle having a plurality of first exhaust holes and connecting the upper surface of the first partition wall to the lower inner wall of the chamber, wherein the second exhaust flow path is spaced apart from the first partition wall.
  • a second partition wall which is formed; A plurality of second exhaust holes are formed, and a second baffle connecting an upper portion of the second partition wall and an upper portion of the first partition wall, wherein the plurality of first exhaust holes and the plurality of second exhaust holes Groups may be formed in groups in directions not overlapping each other.
  • One of the source gas exhaust passage or the reactive gas exhaust passage is a first exhaust passage formed along the lower inner wall of the chamber, and the other of the source gas exhaust passage or the reactive gas exhaust passage is the first exhaust passage.
  • the second exhaust passage is spaced apart along the upper inner wall of the chamber, the first exhaust passage and the second exhaust passage may be connected to different exhaust pipes.
  • a first partition wall formed to be spaced apart from a lower inner wall of the chamber; And a first baffle having a plurality of first exhaust holes and connecting the upper surface of the first partition wall to the lower inner wall of the chamber, wherein the second exhaust passage is spaced apart from the first baffle.
  • a second partition wall formed to be spaced apart from the upper inner wall of the chamber; And a second baffle having a plurality of second exhaust holes and connecting the upper portion of the second partition wall and the upper inner wall of the chamber, wherein the plurality of first exhaust holes and the plurality of second exhaust holes are provided.
  • Groups may be formed in groups in directions not overlapping each other.
  • the substrate treating apparatus may prevent a phenomenon in which different gases used for thin film deposition are mixed with each other in the process of being discharged to the outside of the chamber to generate a byproduct.
  • a phenomenon in which different gases used for thin film deposition are mixed with each other in the process of being discharged to the outside of the chamber to generate a byproduct.
  • the process can be stably performed, and a thin film of high quality can be deposited.
  • the device can be kept clean, thereby reducing the cost and time required to maintain the device, and can also improve productivity.
  • FIG. 1 is a schematic cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention.
  • FIG. 2 is a view conceptually showing the structure of an exhaust passage applied to the gas injection device of FIG.
  • FIG. 3 is a view showing an example of an exhaust passage applied to the gas injection device of FIG.
  • FIG. 4 is a cross-sectional view schematically showing a modified example of the exhaust passage applied to the substrate processing apparatus according to the embodiment of the present invention.
  • FIG. 1 is a schematic cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention.
  • a substrate processing apparatus includes a chamber 100, a substrate support part 120, a gas spray body 130, and a gas discharge unit.
  • the chamber 100 includes a main body 102 having an open upper portion, and a top lead 132 installed on the upper portion of the main body 102 to be opened and closed.
  • a top lid 132 installed on the upper portion of the main body 102 to be opened and closed.
  • the space 110 inside the chamber 100 may be divided into a plurality of regions.
  • the space 110 may be divided into a source gas region, a reaction gas region, and a purge gas region.
  • at least two source gas regions and a reaction gas region may be provided, and they are separated from each other by a purge gas region.
  • the space 110 may include two source gas regions to which two different source gases are supplied, and a reaction gas region to which a reaction gas is supplied between any two source gas regions. And these gas regions are separated from each other by a purge gas region.
  • the space 110 may be formed with two source gas regions supplied with the same source gas and two reaction gas regions formed to face each other between the source gas regions.
  • Such a structure may be classified according to the type of gas injected from the gas spray body 130 to be described later.
  • a gas discharge unit for discharging the gas existing in the space part 110 may be provided at a predetermined position of the chamber 100.
  • the gas discharge unit includes a plurality of exhaust passages 162 and 172 formed along the inner edge of the chamber 100 and a plurality of exhaust ports 105 and 106 in communication with the respective exhaust passages 162 and 172.
  • the plurality of exhaust passages 162 and 172 are independently connected to a plurality of exhaust pipes 150 and 152 connected to an external pump (not shown) through the exhaust ports 105 and 106.
  • the exhaust passages 162 and 172 may be formed using the inner wall of the chamber 100, for example, sidewalls and a bottom surface, as shown in FIG.
  • the exhaust passages 162 and 172 are partition walls 160 and 170 spaced apart from the inner sidewall of the chamber 100 and the partition walls. It may be formed by the baffles 164 and 174 connecting the 160 and 170 and the inner sidewall of the chamber 100.
  • the partition walls 160 and 170 and the baffles 164 and 174 are described as being separated, but the partition walls 160 and 170 and the baffles 164 and 174 are usually formed integrally.
  • a plurality of exhaust holes 166 and 176 are formed in the baffles 164 and 174 to suck air or by-products remaining when the air or the thin film is deposited in the space 110 to exhaust the exhaust ports through the exhaust passages 162 and 172. Discharge to the exhaust pipe (150, 152) connected to 105, 106.
  • the exhaust holes 166 and 176 are formed at positions corresponding to the above-described source gas region and the reaction gas region, respectively, and the exhaust holes 166 and 176 are exhaust passages 162 for exhausting the source gas and the reaction gas. 176, respectively.
  • a gas discharge unit including a plurality of exhaust passages 162 and 172 is formed so as to suppress mixing of different gases.
  • each of the exhaust passages 162 and 172 is preferably formed to discharge the same gas.
  • each of the source gases is different from each other.
  • a through hole 104 into which the rotating shaft 126 of the substrate support part 120 to be described later is inserted is formed at the bottom surface of the chamber 100.
  • Gate valves (not shown) are formed on sidewalls of the main body 102 to carry the substrate W into or out of the chamber 100.
  • the substrate support unit 120 is a structure for supporting the substrate W, and includes a support plate 122 and a rotation shaft 126.
  • the support plate 122 is provided in a horizontal direction inside the chamber 100 in a disc shape, and the rotation shaft 126 is vertically connected to the bottom of the support plate 122.
  • the rotating shaft 126 is connected to a driving means (not shown) such as a motor outside the through hole 104 to lift and rotate the support plate 122. At this time, by sealing the space between the rotating shaft 126 and the through hole 104 by using a bellows (not shown) to prevent the vacuum in the chamber 100 is released in the process of depositing a thin film.
  • a plurality of substrate seating portions 124 is formed at a predetermined interval on the support plate 122.
  • the substrate mounting portion 124 may be formed in a recessed shape so as to prevent the detachment of the mounted substrate W during the rotation of the support plate 122 for thin film deposition.
  • a heater (not shown) may be provided below or inside the support plate 122 to heat the substrate W to a constant process temperature.
  • the gas injector 130 is provided to be spaced apart from the upper portion of the substrate support 120, and injects a process gas such as source gas S, a reaction gas R, and a purge gas P toward the substrate support 120.
  • the gas injection body 130 includes a plurality of gas injection units for injecting different types of gas, and each gas injection unit has a shape similar to a fan shape and is arranged based on the center point of the support plate 122.
  • the arrangement of the gas injection unit corresponds to the source gas region, the reaction gas region and the purge gas region of the space 110.
  • each gas injection unit shares the top lead 132 in a form occupying a portion of the top lead 132, the injection plate formed with a plurality of gas injection holes 136 under the top lead 132 ( 134 is combined.
  • the gas injection unit formed in this way forms a gas diffusion space C between the injection plate 134 and the top lead 132.
  • gas inlet 140 is formed in the top lead 132 in a number corresponding to the number of gas injection units to communicate with the gas diffusion space C between the top lead 132 and the injection plate 134.
  • Each gas inlet 140 is selectively connected to various external gas supply sources (not shown).
  • the injection plate 134 occupies a portion of the top lid 132 and is combined to form a gas injection unit is described, but a plurality of gas injection units may be formed separately.
  • the gas injection units may further include a central gas injection unit 138 for injecting purge gas to prevent the source gas and the reaction gas from being mixed at the center of the substrate support unit 120.
  • an intermediate plate (not shown) having an injection hole (not shown) may be interposed between the top lead 132 and the injection plate 134.
  • the gas introduced into the gas injection unit through the gas inlet 140 may be evenly spread in the gas diffusion space formed between the top lead 132 and the intermediate plate and between the intermediate plate and the injection plate 134. . That is, the process gas introduced through the gas inlet 140 must be completely diffused in the gas diffusion space C and then supplied to the substrate W so that the process gas can be supplied evenly over the entire area of the substrate W. have.
  • the gas supplied from the gas inlet 140 is first diffused between the intermediate plate and the top lead 132, and then on the intermediate plate.
  • the process gas may be completely diffused in the gas diffusion space C through two diffusion processes and may be evenly sprayed on the entire area of the substrate W.
  • the substrate processing apparatus configured as described above is continuously supplied with the raw material gas (S), the reaction gas (R) and the purge gas (P) through the gas injector 130 in the process of depositing a thin film, Residual gas and by-products are discharged to the exhaust pipes 150 and 152 through the gas discharge unit.
  • the source gas S and the reaction gas R are discharged by discharging the source gas S and the reaction gas R using a plurality of exhaust passages in forming the gas discharge unit. ) To prevent them from mixing with each other. This can suppress the generation of by-products due to the mixing of the source gas (S) and the reaction gas (R).
  • the purge gas P since the purge gas P uses an inert gas such as argon (Ar) that does not generally react with other gases, the purge gas P may be discharged through an adjacent exhaust passage.
  • FIG. 2 is a view conceptually showing a structure of a gas discharge unit according to an exemplary embodiment of the present invention, where G denotes a distribution region of gas injected through the gas injection body 130.
  • the gas discharge unit sucks the gas including the raw material gas S and discharges the first exhaust passage 162 for discharging the gas including the source gas S to the first exhaust pipe 150 and the second exhaust pipe by sucking the gas including the reaction gas R. And a second exhaust passage 172 for discharging to 152.
  • the gas discharge unit is formed to include two exhaust passages through which the source gas S and the reaction gas R are discharged.
  • another exhaust passage It may be discharged through (not shown).
  • the respective exhaust passages for discharging different source gases S are formed to communicate with the same exhaust port.
  • different kinds of reaction gases R are used, they are discharged through the same exhaust passage.
  • the first exhaust passage 162 and the second exhaust passage 172 may be formed to be adjacent to each other at the lower portion of the inside of the chamber, or may be formed spaced apart from each other in the vertical direction.
  • the first exhaust passage 162 and the second exhaust passage 172 formed as described above are formed to discharge different kinds of gases, and for convenience, the first exhaust passage 162 may provide the source gas S.
  • the second exhaust passage 172 will be described as sucking and discharging the reaction gas R.
  • the number of the first exhaust passages 162 may increase, for example, in 1 turn 2 cycle deposition or ternary thin film deposition, depending on the type of source gas S. FIG.
  • FIG. 3 is a view showing the structure of a gas discharge unit according to an embodiment of the present invention, will be described in connection with FIG.
  • the gas discharge unit is formed by stacking the first exhaust passage 162 and the second exhaust passage 172 in the vertical direction. That is, the first exhaust passage 162 is formed in the lower portion of the chamber 100, and the second exhaust passage 172 is formed in the upper portion of the first exhaust passage 162.
  • the first exhaust passage 162 is a first baffle 160 formed spaced apart from the lower inner wall of the chamber 100 and a first baffle connecting the first partition 160 and the lower inner wall of the chamber 100 ( 164).
  • a plurality of first exhaust holes 166 are formed in the first baffle 164.
  • the second exhaust passage 172 may include a second baffle 174 connecting the second partition 170 formed on the first partition 162 and the upper portion of the second partition 170 to the lower inner wall of the chamber 100. Is formed by In this case, a plurality of second exhaust holes 176 are also formed in the second baffle 174.
  • the gas sucked inside for example, the reaction gas R
  • the gas for example, the source gas S is not sucked through the first exhaust passage 162 provided on the lower side. That is, the first exhaust passage 162 and the second exhaust passage 172 are blocked by each other by the first baffle 164.
  • the source gas S and the reaction gas R are injected into the second baffle 174 constituting the second exhaust passage 172.
  • a plurality of second exhaust holes 176 are formed in a portion corresponding to the portion of the plurality of second exhaust holes 176 by using the first connecting pipe 168 that crosses the second exhaust passage 172. It is connected to the first exhaust hole (166).
  • the second exhaust passage 172 passes through the first baffle 164 and uses the second connecting pipe 178 crossing the first exhaust passage 162 through the exhaust port 106 to the second exhaust pipe 152.
  • first bulkhead 160, the first baffle 164, and the second bulkhead 170 and the second baffle 174 are described in a separated state from each other, the first bulkhead 160, the first baffle 164, and the second baffle 164 may be formed in an integral shape having a 'b' shape. have.
  • the gas including the raw material gas S is sucked into the second exhaust hole 176 formed in the second exhaust passage 172, and then passes through the first connecting pipe 168.
  • the exhaust pipe 162 is discharged to the first exhaust pipe 150.
  • the gas including the reaction gas R is discharged into the second exhaust passage 172 through the second exhaust hole 176 to be discharged through the second connection pipe 178.
  • the exhaust pipe 152 is discharged.
  • FIG. 4 is a cross-sectional view showing a modification of the gas discharge unit according to the present invention.
  • the gas discharge unit described herein may be formed in almost the same manner as the gas discharge unit shown in FIG.
  • the gas discharge unit includes a first exhaust passage 260 formed along a lower edge of the inside of the chamber 100, and a second exhaust passage formed inside the first exhaust passage 260. 270.
  • first exhaust passage 260 and the second exhaust passage 270 are formed in a horizontal direction, the first exhaust passage 260 and the second exhaust passage 270 are located at the same height.
  • Process gas for inhaling the first exhaust hole (not shown) formed in the first exhaust passage 260 and the second exhaust hole (not shown) formed in the second exhaust passage 270 is injected through the corresponding exhaust passage. It is preferable to form in each area
  • the source gas S discharged through the first exhaust passage 260.
  • the rate of discharge of the reaction gas R discharged through the second exhaust passage 270 may occur.
  • the size of the first exhaust hole and the second exhaust hole formed in the first exhaust passage 260 and the second exhaust passage 270, the spacing and the position or the like is injected through the gas injection unit You can also adjust the amount of gas.
  • the gas discharge unit is spaced apart from the first exhaust passage 460 and the first exhaust passage 460 formed along the lower edge of the chamber 100, and thus, inside the chamber 100.
  • the second exhaust passage 470 is formed along the upper edge of the.
  • the first exhaust passage 460 and the second exhaust passage 470 is formed spaced apart from the upper and lower inside the chamber 100.
  • a second exhaust pipe 152 may be formed in the top lead 132 to discharge the process gas discharged to the second exhaust passage 470 formed in the upper portion of the chamber 100 to the outside.
  • first exhaust passage 460 and the second exhaust passage 470 are formed apart from each other, the first exhaust passage 460 and the second exhaust passage 470 so that the process gas can be uniformly discharged through them. It is necessary to properly adjust the separation distance. In this case, the separation distance between the first exhaust passage 460 and the second exhaust passage 470 may be adjusted based on the upper surface of the support plate 122 on which the substrate W is seated.
  • Exhaust holes formed in the first exhaust passage 460 and the second exhaust passage 470 are formed in a group in a direction not overlapping with each other as in FIG. 4A to form different types of process gases. Allow for discharge.
  • the substrate processing apparatus can suppress generation of by-products due to mixing of different gases, thereby keeping the inside of the chamber where substrate processing is performed clean. Therefore, it is possible to deposit a thin film of high quality, to reduce the cost and time required for the maintenance of the device, and to improve the productivity.

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  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
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PCT/KR2012/011004 2011-12-26 2012-12-17 Dispositif de traitement de substrat Ceased WO2013100462A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0142472 2011-12-26
KR1020110142472A KR101804128B1 (ko) 2011-12-26 2011-12-26 기판처리장치

Publications (1)

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WO2013100462A1 true WO2013100462A1 (fr) 2013-07-04

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CN111029282B (zh) * 2019-12-24 2023-01-17 北京北方华创微电子装备有限公司 热处理装置

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