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WO2013186879A1 - Dispositif de mesure d'épaisseur de film et dispositif de formation de film - Google Patents

Dispositif de mesure d'épaisseur de film et dispositif de formation de film Download PDF

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Publication number
WO2013186879A1
WO2013186879A1 PCT/JP2012/065141 JP2012065141W WO2013186879A1 WO 2013186879 A1 WO2013186879 A1 WO 2013186879A1 JP 2012065141 W JP2012065141 W JP 2012065141W WO 2013186879 A1 WO2013186879 A1 WO 2013186879A1
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WO
WIPO (PCT)
Prior art keywords
substrate
film thickness
film
light receiving
fiber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2012/065141
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English (en)
Japanese (ja)
Inventor
旭陽 佐井
陽平 日向
芳幸 大瀧
友松 姜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shincron Co Ltd
Original Assignee
Shincron Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shincron Co Ltd filed Critical Shincron Co Ltd
Priority to JP2013510438A priority Critical patent/JP5319856B1/ja
Priority to PCT/JP2012/065141 priority patent/WO2013186879A1/fr
Priority to CN201280073820.2A priority patent/CN104395690B/zh
Priority to HK15104929.1A priority patent/HK1204490B/xx
Priority to TW102106106A priority patent/TWI489080B/zh
Publication of WO2013186879A1 publication Critical patent/WO2013186879A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/52—Means for observation of the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
    • C23C14/547—Controlling the film thickness or evaporation rate using measurement on deposited material using optical methods
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection

Definitions

  • the present invention relates to a film thickness measuring apparatus and a film forming apparatus equipped with the film thickness measuring apparatus, and more particularly to an optical film formed on a substrate to be measured through an optical fiber in order to measure an optical film thickness formed on the substrate to be measured.
  • the present invention relates to a film thickness measuring apparatus that irradiates light and receives reflected light reflected by a measurement substrate through an optical fiber, and a film forming apparatus equipped with the film thickness measuring apparatus.
  • the film thickness referred to here is an optical film thickness, and is a value determined by the physical film thickness and the refractive index of the thin film.
  • a phenomenon in which a light beam reflected on the surface of the optical thin film and a light beam reflected on the interface between the substrate and the optical thin film interfere with each other by causing a phase difference due to a path difference is used.
  • a reflection measurement method for measuring a film thickness is known, and various apparatuses have been proposed for a film thickness measurement apparatus employing such a measurement method.
  • An example of a conventional film thickness measuring apparatus is a film thickness measuring apparatus mounted on the film forming apparatus described in Patent Document 1.
  • a film thickness measuring apparatus mounted on the film forming apparatus described in Patent Document 1.
  • light projected on the optical thin film is propagated from the light source through the optical fiber, and light reflected at the interface between the substrate and the optical thin film is propagated to the spectroscope through the optical fiber.
  • the monitor glass When the film thickness measurement device is installed in the vacuum film formation device, the monitor glass is set in the device together with the substrate that will eventually become a multilayer film product, and the thin film is also applied to the monitor glass under the same conditions as the substrate. Form. Then, during the film forming process, the film thickness is monitored by measuring the optical film thickness of the thin film formed on the monitor glass side. Thereby, the optical film thickness of each layer of the multilayer film formed on the substrate side can be measured.
  • the monitor glass changes from a glass that has already been formed to a new glass, that is, a monitor glass before film formation, each time a multilayer film is formed on the substrate during the film-forming process. Will be replaced.
  • the film thickness is measured when the light beam is irradiated perpendicularly to the optical thin film. Thickness, that is, it becomes thinner than the original film thickness. More specifically, assuming that the incident angle of the light beam with respect to the optical film of the substrate is ⁇ , the refractive index of the optical film is n, and the original film thickness is d0, the measured value d of the film thickness is given by the following formula (1 ).
  • the incident angle ⁇ corresponds to half of the angle formed by the optical path of light incident on the substrate and the optical path of light reflected on the substrate side.
  • FIG. 9 is an explanatory diagram relating to the incident angle.
  • the area (effective light projection range) of the portion that actually irradiates light in the projector that irradiates the optical thin film is minimized, It is desirable to reduce the incident angle ⁇ .
  • a condensing lens may be provided between the projector and the optical thin film, and the optical thin film may be irradiated with light through the condensing lens.
  • a light receiving lens may be provided between the light receiver and the optical thin film, and the reflected light from the optical thin film may be received via the light receiving lens. is there. In such a case, the illuminance is attenuated as light passes through the lens, which may affect the measurement accuracy of the film thickness.
  • the accuracy of the film thickness control performed reflecting the measurement result also decreases, and a thin film having a desired film thickness is obtained. It will be difficult to get.
  • an object of the present invention is to provide a film thickness measuring apparatus capable of measuring an optical film thickness with high accuracy.
  • another object of the present invention is to provide a film forming apparatus capable of accurately controlling the film thickness of a thin film formed on a substrate based on an accurate measurement result of an optical film thickness. .
  • the subject is directed toward the substrate to be measured through an irradiation side fiber made of an optical fiber in order to measure the optical film thickness of the film formed on the substrate to be measured.
  • An irradiating device that irradiates light, and a light receiving device that receives the light reflected from the substrate to be measured after being irradiated from the irradiating device through a light receiving side fiber including an optical fiber in order to measure the optical film thickness.
  • the irradiation apparatus changes the thin film to the thin film.
  • the incident angle of the irradiated light becomes smaller.
  • an optical path when the light irradiated from the end face of the irradiation side fiber goes to the thin film and an optical path when the light is reflected by the substrate to be measured and goes to the end face of the light receiving side fiber are:
  • the angle formed when the end face of the irradiation side fiber and the end face of the light receiving side fiber are adjacent to each other is smaller than when the end faces of both fibers are not adjacent to each other.
  • the incident angle is 1 ⁇ 2 of the size of the angle formed by the two optical paths, when the end face of the irradiation side fiber and the end face of the light receiving side fiber are adjacent to each other, the incident angle also depends on the incident angle. Get smaller.
  • the measurement error ⁇ d is reduced by the relationship between the incident angle and the film thickness measurement error ⁇ d (specifically, the above-described equation (1)). Further, if the end face of the irradiation side fiber and the end face of the light receiving side fiber are adjacent to each other, the reflected light can be efficiently received through the light receiving side fiber.
  • the end faces of the fibers are usually arranged in a dense state within the end face of the probe.
  • the end faces of the fibers are denser, the end faces of the irradiation side fibers and the end faces of the light receiving side fibers are more likely to be densely packed.
  • each fiber is arranged so that the end face of the irradiation side fiber and the end face of the light receiving side fiber are arranged in an arc shape or an annular shape on the end face of the probe, the irradiation side fiber and the light receiving side fiber are adjacent to each other.
  • a suitable fiber arrangement can be realized efficiently. Due to the above-described action, the film thickness measuring apparatus according to claim 1 can measure the optical film thickness more accurately than the conventional apparatus.
  • the probe may include, among the substrates to be measured, on the facing surface in a state where no optical component is provided between the facing surface and the substrate to be measured. It is preferable that it faces a non-film-forming surface located on the opposite side to the side on which the film is formed.
  • a condensing lens and a light receiving lens are not used, light loss can be suppressed, and when the reflected light is received through the light receiving side fiber, the reflected light can be received with a relatively large illuminance. It becomes possible. As the amount of light received through the light receiving side fiber increases, the S / N ratio when the light is subjected to spectral analysis to calculate the film thickness is improved. Therefore, according to the configuration of the second aspect, the optical film thickness can be measured with higher accuracy.
  • the plurality of irradiation side fibers and the plurality of light receiving side fibers constituting the probe constitute a bundle fiber whose end faces are aligned on the facing surface, and the facing surface and the component are formed. It is more preferable that the distance to the film surface is at least twice the diameter of the bundle fiber.
  • the incident angle of light with respect to the thin film in other words, the reflection angle of the light reflected by the thin film is equal to or less than the numerical aperture NA of the light receiving side fiber. In this case, the light receiving efficiency when receiving light through the light receiving side fiber is further increased. Therefore, the configuration according to claim 3 makes it possible to measure the optical film thickness with higher accuracy.
  • the substrate to be measured may be a disk-shaped or annular substrate. That is, in the configuration described in claim 4, it is possible to accurately measure the optical film thickness of the thin film formed on the disk-shaped or annular substrate for measurement. Furthermore, in a film thickness measuring apparatus that can monitor the film thickness at multiple points, if a disk-shaped or annular substrate is used, the number of monitor points can be increased as compared with, for example, a rectangular substrate.
  • the thin film measuring apparatus may further include the irradiation device, a DC stabilized power source that supplies a direct current to a light source provided in the irradiation device, the probe, and the light receiving device, and the light receiving device includes the light receiving device.
  • a spectrometer that outputs an analog signal corresponding to the intensity of light received when the light reflected by the measurement substrate is received, an amplifier that amplifies the analog signal output from the spectrometer, and the amplifier that is amplified by the amplifier
  • An A / D converter that converts the analog signal into a digital signal; an electronic calculator that calculates the optical film thickness based on the digital signal; and the A / D converter and the electronic calculator,
  • the electric calculator may include a signal processing circuit for performing predetermined signal processing on the digital signal when calculating the optical film thickness. That is, in the configuration described in claim 5, it is possible to measure the optical film thickness of the thin film with high accuracy while including the same equipment as the constituent equipment included in the normal thin film measuring apparatus.
  • the above-described problem is a film forming apparatus for forming a film on a substrate by depositing a vapor deposition material on the surface of the substrate in a vacuum vessel in the film forming apparatus of the present invention.
  • the film thickness measuring device according to any one of claims 1 to 5, wherein both the substrate and the substrate to be measured are accommodated in the vacuum vessel, and the surfaces of both
  • the evaporation mechanism evaporates the vapor deposition material
  • the film thickness measuring device measures the optical film thickness of the film formed on the substrate to be measured
  • the control mechanism includes: Of the optical film thickness by the film thickness measuring device.
  • the film forming apparatus configured as described above includes the film thickness measuring apparatus that achieves the above-described effects, it is possible to accurately measure the film thickness, and further, according to the measurement result, the film thickness can be measured. Control will be performed. Therefore, if it is the film-forming apparatus of Claim 6, it will become possible to control the film thickness of the thin film formed in a board
  • the film thickness measuring device measures the optical film thickness of each layer of the multilayer film formed on the substrate to be measured for each layer.
  • the optical film thickness of each layer film is measured each time each layer of the multilayer film is formed on the substrate to be measured without changing the substrate to be measured while the multilayer film is formed on the substrate. Therefore, it is possible to suppress the influence caused by the change of the substrate to be measured every time the film thickness of each layer is measured. Therefore, if it is the film-forming apparatus of Claim 7, it can measure the film thickness of each layer of the multilayer film formed in a board
  • the film thickness measuring apparatus it is possible to measure the optical film thickness more accurately than in the conventional apparatus.
  • the optical film thickness can be measured with higher accuracy because the S / N ratio of the spectroscopic analysis is improved.
  • the optical film thickness since the reflection angle of the light reflected by the thin film is less than or equal to the numerical aperture NA of the light receiving side fiber, the optical film thickness can be measured with higher accuracy.
  • a film thickness measuring apparatus capable of multipoint monitoring of film thickness
  • the number of monitor points can be increased as compared with a rectangular substrate.
  • the film thickness measuring apparatus it is possible to accurately measure the optical film thickness of the thin film after having the same equipment as the constituent equipment of the normal thin film measuring apparatus.
  • the film thickness can be accurately measured, and the film thickness can be accurately controlled according to the measurement result.
  • the film forming apparatus when measuring the optical film thickness of each layer of the multilayer film formed on the substrate, the film is formed on the substrate as much as the influence caused by the change of the substrate to be measured for each layer can be suppressed. It is possible to accurately measure the film thickness of each layer of the multilayer film, and to control the film thickness more accurately based on the measurement result.
  • FIGS. 3A and 3B are diagrams illustrating fiber arrangement positions in the first example. It is a figure which shows the arrangement position of the fiber in a comparative example.
  • FIGS. 5A and 5B are diagrams showing the arrangement positions of the fibers in the second example. It is explanatory drawing about the effectiveness of the arrangement position of the fiber which concerns on this embodiment.
  • (A) and (B) of Drawing 7 are figures showing other variations about the 2nd example.
  • FIGS. 8A and 8B are views showing the arrangement positions of the fibers in the third example. It is explanatory drawing regarding an incident angle.
  • FIG. 1 is a diagram showing a schematic configuration of a film forming apparatus according to this embodiment.
  • the film forming apparatus is an apparatus that forms a multilayer film on a substrate by depositing a deposition material on the surface of the substrate in a vacuum vessel, and in particular, a vacuum deposition apparatus that forms a film by a vacuum deposition method. 100. Further, in the vacuum deposition apparatus 100 of the present embodiment, a thin film optical film formed on the monitor substrate Sm side by setting a substrate (hereinafter referred to as an actual substrate S) and a monitor substrate Sm for film thickness measurement in the vacuum vessel 1. While measuring the thickness, the film thickness of the thin film formed on the actual substrate S side can be controlled based on the measurement result.
  • a substrate hereinafter referred to as an actual substrate S
  • a monitor substrate Sm for film thickness measurement in the vacuum vessel 1. While measuring the thickness, the film thickness of the thin film formed on the actual substrate S side can be controlled based on the measurement result.
  • the actual substrate S is a substrate that is actually attached to the thin-film device, and is made of, for example, glass.
  • the monitor substrate Sm corresponds to a substrate to be measured and is used only for film thickness monitoring, and is made of the same material as the actual substrate S, for example, glass.
  • the monitor substrate Sm according to the present embodiment is an annular substrate in plan view, and a suitable thickness is 1.0 to 2.0 mm.
  • a multilayer film is formed on the monitor substrate Sm under the same conditions as the actual substrate S. That is, in this embodiment, the optical film thickness of the thin film formed on the actual substrate S side and the optical film thickness of the thin film formed on the monitor substrate Sm side are regarded as the same, and the optical film thickness of the thin film on the monitor substrate Sm side. To monitor the optical film thickness of the thin film on the actual substrate S side.
  • the vacuum vessel 1, the substrate holder 2, the evaporation mechanism 3, the shutter 4, the shutter control unit 5, and the film thickness measuring device 6 are mainly used. It is provided as a component.
  • a dome-shaped substrate holder 2 is accommodated in an upper space of the inner space of the vacuum vessel 1, and a plurality of actual substrates S are attached to the inner surface of the substrate holder 2.
  • an opening 2a is formed at the center position of the inner surface of the substrate holder 2, and one monitor substrate Sm is disposed immediately below the opening 2a. A part of the monitor substrate Sm arranged at this position is exposed to the outside of the dome through the opening 2a.
  • the substrate holder 2 rotates around the rotation axis along the vertical direction during the film formation period for the purpose of making the film formation amount between the actual substrates S uniform.
  • the monitor substrate Sm rotates relative to the substrate holder 2. That is, in the present embodiment, the monitor substrate Sm is held by a monitor substrate holder (not shown) that is separate from the substrate holder 2, and the substrate holder 2 and the monitor substrate holder can rotate independently of each other. It is.
  • an evaporation mechanism 3 is provided in a lower space of the inner space of the vacuum vessel 1.
  • the evaporation mechanism 3 is for evaporating a deposition material to be deposited on the actual substrate S or the monitor substrate Sm for forming a thin film.
  • the evaporation mechanism 3 according to the present embodiment is the same type as the evaporation mechanism that is normally provided in a vacuum evaporation apparatus.
  • an evaporation material held in a crucible (not shown) is heated by an electron beam.
  • An electron beam device that evaporates may be used.
  • a shutter 4 is provided between the substrate holder 2 and the evaporation mechanism 3.
  • the shutter 4 is an example of an opening / closing member, and is opened / closed by a driving mechanism (not shown) in order to block a path when the vapor deposition material evaporated by the evaporation mechanism 3 goes to the surface of the actual substrate S or the monitor substrate Sm.
  • a driving mechanism not shown
  • the shutter 4 is in the open position (the position of the shutter 4 indicated by a solid line in FIG. 1), the vapor deposition material evaporated by the evaporation mechanism 3 is scattered and the actual substrate S or the monitor. It can be supplied to the substrate Sm.
  • the shutter 4 is in the closed position (the position of the shutter 4 indicated by a broken line in FIG. 1), the deposition of the vapor deposition material is prevented by the shutter 4, and as a result, vapor deposition on the actual substrate S and the monitor substrate Sm is performed. The material supply becomes impossible.
  • the shutter control unit 5 corresponds to a control mechanism that controls the opening and closing of the shutter 4, and in this embodiment, is configured by a second computer PC2 described later. More specifically, the second computer PC2 is connected to the shutter 4 via an interface (not shown), and the control program installed in the second computer PC2 is executed to control the shutter 4 toward the shutter 4. Output a signal. When the shutter 4 receives a control signal from the second computer PC2, the shutter 4 opens and closes according to the control signal.
  • the film thickness measuring apparatus 6 is an apparatus for measuring the optical film thickness of the thin film formed on the monitor substrate Sm.
  • the film thickness measuring apparatus 6 measures the film thickness by a reflection method. That is, the film thickness measuring apparatus 6 according to the present embodiment makes light incident on the thin film formed on the monitor substrate Sm, receives the light reflected by the monitor substrate Sm, and then splits the reflected light. The light intensity (spectrum) for each wavelength is detected. Then, the optical film thickness of the thin film formed on the monitor substrate Sm is calculated based on the detected light intensity.
  • the film thickness measuring device 6 measures the optical film thickness of each layer in the multilayer film formed on the monitor substrate Sm for each layer. More specifically, as described above, the monitor substrate Sm rotates independently of the substrate holder 2, while a monitor substrate mask (not shown) is disposed immediately below the monitor substrate Sm. .
  • This monitor substrate mask is a disk-shaped member, and an opening is formed at the center thereof. A part of the monitor substrate Sm is exposed to the evaporation mechanism 3 through this opening.
  • the evaporation mechanism 3 evaporates the vapor deposition material in order to deposit the vapor deposition material on both surfaces.
  • a thin film is formed under substantially the same conditions on the film formation surfaces of the actual substrate S and the monitor substrate Sm.
  • the region where the thin film is formed is only the region exposed through the opening formed in the monitor substrate mask.
  • a multilayer film is formed on the actual substrate S, and each time a thin film of each layer is formed, the vapor deposition material and the film forming conditions form the thin film of the next layer. To the materials and conditions to do.
  • a multilayer film is also formed on the monitor substrate Sm under substantially the same conditions as the substrate.
  • the monitor is switched when the vapor deposition material and film formation conditions are switched after a thin film for one layer is completed.
  • the substrate Sm rotates relative to the stationary monitor substrate mask by a predetermined rotation angle. As the monitor substrate Sm rotates relative to the monitor substrate mask in this way, the region exposed through the opening formed in the monitor substrate mask in the monitor substrate Sm is shifted by the rotation angle. As a result, the region where the thin film is formed is shifted by the rotation angle.
  • an area of the monitor substrate Sm exposed before the rotation (hereinafter referred to as an exposure area before the rotation) and an area exposed after the rotation (hereinafter referred to as the exposure after the rotation).
  • a thin film of a new layer is formed in the overlapping area with the region.
  • the thin film of a new layer is not formed in the range which does not overlap with the exposed area after rotation among the exposed areas before rotation. Therefore, the film thickness of the thin film formed by each film forming process is the area exposed in the monitor substrate Sm before and after the rotation operation immediately before the film forming process is performed and after the rotation operation. It is calculated
  • FIG. 2 is a schematic side view of the probe according to the present embodiment.
  • the film thickness measuring device 6 includes a projector 11, a DC stabilized power supply 12, an optical sensor probe 13, a spectrometer 14, an amplifier 15, an A / D converter 16, a signal A processing circuit 17 and two computers PC1 and PC2 are included as main components.
  • the light projector 11 is an example of an irradiation apparatus, and irradiates light toward the monitor substrate Sm through the irradiation side fiber f1 made of an optical fiber in order to measure the optical film thickness of the film formed on the monitor substrate Sm. More specifically, the projector 11 includes a light source 21 including a halogen lamp, and irradiates white light emitted from the light source 21 from the tip surface of the optical sensor probe 13 on which the end surface of the irradiation side fiber f1 is disposed. To do.
  • the light projector 11 is synchronized with the spectroscope 14, and the light source 21 is repeatedly turned off and on in synchronization with the output period of the incident light intensity in the spectroscope 14.
  • a direct current is supplied from the direct current stabilized power supply 12 to the light source 21 provided in the projector 11.
  • the spectroscope 14 includes a light receiving device 22 and outputs an analog signal corresponding to the received light intensity when the light receiving device 22 receives the light reflected by the monitor substrate Sm. More specifically, the light receiving device 22 provided in the spectroscope 14 is configured by, for example, a CCD (Charge Coupled Device), and after being irradiated from the projector 11 to measure the optical film thickness, the monitor substrate The light reflected by Sm is received through a light receiving side fiber f2 made of an optical fiber. The spectroscope 14 divides the light received by the light receiving device 22, detects the light intensity (spectrum) for each wavelength, and outputs an electrical signal corresponding to the detection result.
  • the electrical signal output from the spectroscope 14 corresponds to an analog signal corresponding to the received light intensity when the light receiving device 22 receives the reflected light.
  • the spectroscope 14 also splits the light emitted from the projector 11 and outputs an optical signal indicating the light intensity for each wavelength of the incident light, that is, the incident light intensity. As described above, the spectroscope 14 outputs an electric signal indicating the incident light intensity and an electric signal indicating the reflected light intensity.
  • the two types of electrical signals output from the spectroscope 14 are each amplified by an amplifier 15 and then converted into a digital signal by an A / D converter 16. Thereafter, the digital signal is input to the second computer 19.
  • the optical sensor probe 13 is an example of a probe, and is formed by bundling a plurality of irradiation side fibers f1 and a plurality of light receiving side fibers f2. More specifically, the plurality of irradiation side fibers f1 connected to the projector 11 and the plurality of light receiving side fibers f2 connected to the light receiving device 22 form bundles as shown in FIG. It is housed in the flexible tube 23.
  • the irradiation side fiber f1 and the light receiving side fiber f2 each have a core and a coating covering the core.
  • the core diameter is about 200 ⁇ m
  • the fiber diameter including the coating is about 235 ⁇ m. ing.
  • connection connector 24A is attached to the end of the bundle formed by the irradiation side fiber f1 on the side connected to the projector 11.
  • connection connector 24B is attached to the end of the bundle formed by the light receiving side fiber f2 on the side connected to the light receiving device 22.
  • the bundled irradiation side fiber f1 and light receiving side fiber f2 are bundled together on the free end side to form an optical sensor probe 13. That is, the plurality of irradiation side fibers f1 and the plurality of light receiving side fibers f2 constituting the optical sensor probe 13 form a bundle fiber whose end surfaces are aligned on the free end side surface of the optical sensor probe 13.
  • the fibers f1 and f2 housed inside are disposed in the vacuum vessel 1.
  • the protective cylinder 25 includes a large-diameter portion 25a and a small-diameter portion 25b having different diameters, and the small-diameter portion 25b forms the tip of the optical sensor probe 13.
  • the optical sensor probe 13 is set so that one end surface of the small-diameter portion 25b, which is the tip surface thereof, faces the monitor substrate Sm at a position directly above the monitor substrate Sm. That is, one end surface of the small diameter portion 25b that forms the tip surface of the optical sensor probe 13 corresponds to a facing surface provided on the side where the optical sensor probe 13 faces the monitor substrate Sm.
  • the end surfaces are aligned so that the irradiation side fiber f1 and the light receiving side fiber f2 are flush with each other. Therefore, a plurality of end faces of the irradiation side fiber f1 and a plurality of end faces of the light receiving side fiber f2 are arranged on one end face of the small diameter portion 25b.
  • the end face of the irradiation side fiber f1 and the end face of the light receiving side fiber f2 are regularly arranged on one end face of the small diameter portion 25b. The arrangement position of the fibers f1 and f2 on the one end face of the small diameter portion 25b will be described in detail later.
  • the optical sensor probe 13 of the present embodiment is configured by a bundle fiber in which a plurality of irradiation side fibers f1 and light receiving side fibers f2 are bundled.
  • the number of each of the irradiation side fibers f1 and the light receiving side fibers f2 constituting the optical sensor probe 13 is 20 or more.
  • the two computers PC1 and PC2 can communicate with each other via Ethernet (registered trademark), and the first computer PC1, which is one computer, controls the projector 11.
  • the first computer PC1 controls the light irradiation operation of the projector 11 via the programmable logic controller PLC for communication protocol conversion.
  • the second computer PC2, which is the other computer, is an example of an electronic computer. Based on the digital signal generated by the A / D converter 16 converting the electrical signal output from the spectroscope 14, the monitor board is used. The optical film thickness of the thin film formed on Sm is calculated.
  • a signal processing circuit 17 is interposed between the A / D converter 16 and the second computer PC2.
  • the signal processing circuit 17 performs predetermined signal processing on the digital signal when the second computer PC2 calculates the optical film thickness.
  • the predetermined signal processing is processing for converting the above digital signal into a signal in a format suitable for use in the optical film thickness calculation by the second computer PC2, for example, removing components other than the interference signal Such as wavelet processing and frequency analysis processing.
  • the second computer PC2 corresponds to a control mechanism that controls the opening and closing of the shutter 4, and controls the opening and closing of the shutter 4 according to the calculated value of the optical film thickness.
  • the calculated value of the optical film thickness calculated by the second computer PC2 is the measurement result of the optical film thickness by the film thickness measuring device 6.
  • the configuration of the film thickness measuring device 6 according to the present embodiment described above is mostly the same as the configuration of the conventional reflective film thickness measuring device, but there are four points described below. This is different from the conventional apparatus.
  • the first difference is that optical components such as a condensing lens and a light receiving lens are not provided between the tip surface of the optical sensor probe 13 and the monitor substrate Sm. That is, in this embodiment, as shown in FIG. 1, the optical sensor probe 13 is in a state in which no optical component is provided between one end surface of the small-diameter portion 25b forming the tip surface and the monitor substrate Sm. One end surface of the small diameter portion 25b faces the non-film-forming surface of the monitor substrate Sm.
  • the non-deposition surface is a surface located on the opposite side of the monitor substrate Sm from the side on which the film is formed.
  • the film thickness measuring device 6 can accurately measure the optical film thickness.
  • the bundle fiber formed by the irradiation side fiber f1 and the light receiving side fiber f2 is used for the diameter of the effective projection spot.
  • the bundle fiber diameter is defined by the two end faces that are farthest from the end faces of the plurality of irradiation side fibers f1 and the end faces of the plurality of light receiving side fibers f2 arranged on the tip face of the optical sensor probe 13.
  • the length is about 1.8 mm in this embodiment.
  • the second difference is that the distance between the tip surface of the optical sensor probe 13 and the film formation surface of the monitor substrate Sm is at least twice the bundle fiber diameter.
  • the incident angle of light with respect to the thin film in other words, the reflection angle of light reflected by the thin film is equal to or less than the numerical aperture NA of the light receiving side fiber f2.
  • the distance between the tip surface of the optical sensor probe 13 and the film formation surface of the monitor substrate Sm is secured twice or more the bundle fiber diameter by utilizing the above properties. As a result, the light receiving efficiency when receiving light through the light receiving side fiber f2 is further increased, and the optical film thickness can be measured with higher accuracy.
  • the distance between the tip surface of the optical sensor probe 13 and the film formation surface of the monitor substrate Sm becomes excessively short, the incident angle of light with respect to the thin film and the reflection angle of light reflected by the thin film increase. Since the light receiving efficiency of the optical sensor probe 13 (the ratio of the amount of light received by the optical sensor probe 13 to the amount of reflected light) is reduced, the measurement accuracy is lowered. On the other hand, if the distance between the tip surface of the optical sensor probe 13 and the film formation surface of the monitor substrate Sm becomes excessively long, the time from when the light is reflected by the thin film until it is received by the optical sensor probe 13. Since the degree of attenuation increases, the measurement accuracy decreases. On the other hand, it is preferable that the distance between the tip surface of the optical sensor probe 13 and the film formation surface of the monitor substrate Sm is at least twice the bundle fiber diameter, preferably in the range of 2 to 3 times. Measurement accuracy can be achieved.
  • the distance between the tip surface of the optical sensor probe 13 and the film formation surface of the monitor substrate Sm is hereinafter referred to as an operating distance WD.
  • the third difference is that while the multilayer film is formed on the actual substrate S, the same monitor substrate Sm is disposed in the vacuum vessel 1 and the multilayer film is also formed on the monitor substrate Sm. That is, in the present embodiment, the monitor substrate Sm is not replaced while the multilayer film is being formed on the actual substrate S. Then, the film thickness measuring device 6 measures the optical film thickness of each layer of the multilayer film formed on the monitor substrate Sm for each layer. As a result, when the optical film thickness of each layer of the multilayer film is measured for each layer, the influence caused by the change of the monitor substrate Sm for each measurement is suppressed.
  • some conventional film forming apparatuses for forming a multilayer film are equipped with a monitor substrate changer (not shown).
  • a monitor substrate changer (not shown).
  • each layer of the multilayer film is formed on the actual substrate S.
  • the monitor board changer is changed, the monitor board Sm is replaced.
  • this variation may affect the thin film measurement accuracy. That is, in terms of reproducibility of film thickness measurement, there is a problem in exchanging the monitor substrate during the formation of the multilayer film.
  • the same monitor substrate Sm is continuously arranged in the vacuum vessel 1 during the period in which the multilayer film is formed on the actual substrate S, the influence caused by the variation between the monitor substrates Sm is reduced by the thin film. It does not reach the accuracy of measurement. Accordingly, the film thickness of each layer of the multilayer film formed on the monitor substrate Sm can be accurately measured, and the optical film thickness of the film formed on the actual substrate S side is more accurately based on the measurement result. It becomes possible to control well.
  • an annular substrate is used as the monitor substrate Sm.
  • the film thickness can be monitored at multiple points.
  • the bundle fiber diameter is about 1.8 mm
  • the optical sensor probe 13 is composed of 20 or more irradiation side fibers f1 and light receiving side fibers f2.
  • the number of monitor points can be set to 80 points.
  • two types of vapor deposition layers of a high refractive index vapor deposition material and a low refractive index vapor deposition material are formed on the monitor substrate Sm. If so, for example, it is possible to deal with a case where a multilayer film composed of 160 layers (80 ⁇ 2) is formed.
  • the fourth difference is the position where the end faces of the irradiation side fiber f1 and the light receiving side fiber f2 are arranged on one end face of the small diameter portion 25b which is the tip face of the optical sensor probe 13. More specifically, in the present embodiment, each of the end faces of the plurality of irradiation side fibers f1 arranged adjacent to the end face of at least one light receiving side fiber f2 on the front end face of the optical sensor probe 13. It is arranged in an arc shape or an annular shape in a state.
  • each of the end faces of the plurality of light receiving side fibers f2 are arranged in an arc shape or an annular shape in a state of being adjacent to each of the end faces of at least one irradiation side fiber f1. ing.
  • the incident light irradiated from the projector 11 onto the thin film is incident.
  • the angle becomes smaller.
  • the magnitude of the incident angle is such that the light irradiated from the end face of the irradiation side fiber f1 travels toward the thin film, and the same light is reflected at the surface of the thin film or the boundary surface between the monitor substrate Sm and the thin film.
  • it is 1 ⁇ 2 of the angle formed by the optical path toward the end face of the light receiving side fiber f2.
  • the measurement error ⁇ d of the film thickness increases as the incident angle ⁇ increases.
  • the incident angle ⁇ is 3 °, 5 °, 8 °, 10 °, and 12 °
  • the measurement error ⁇ d is 0.07%, 0.2%, 0.5%, 0.7%, and 1.0%.
  • the smaller the incident angle ⁇ the smaller the film thickness measurement error ⁇ d.
  • the ratio of the light quantity received through the light receiving side fiber f2 out of the light quantity reflected by the thin film that is, the light receiving efficiency. Decreases.
  • the end face of the irradiation side fiber f1 and the end face of the light receiving side fiber f2 are adjacent to each other, the light receiving efficiency is improved.
  • the accuracy of the film thickness measurement is improved as the filling rate of the fiber at the distal end surface of the optical sensor probe 13 is increased. Therefore, the end surfaces of the fibers are usually in a dense state in the distal end surface of the optical sensor probe 13. Be placed.
  • the end faces of the fibers are denser, the end faces of the irradiation side fibers f1 and the end faces of the light receiving side fibers f2 are more likely to be densely packed. If the end faces of the same type of fibers are densely arranged in a lump, the end face of the irradiation side fiber f1 and the end face of the light receiving side fiber f2 are easily separated.
  • each fiber is arranged so that the end surface of the irradiation side fiber f1 and the end surface of the light receiving side fiber f2 are arranged in an arc shape or an annular shape on the tip surface of the optical sensor probe 13, the irradiation side fiber f1 is arranged. And a fiber arrangement such that the light receiving side fiber f2 is adjacent to each other can be efficiently realized.
  • the end surface of the irradiation side fiber f1 and the end surface of the light receiving side fiber f2 are arranged on the tip surface of the optical sensor probe 13, respectively.
  • the film thickness measuring apparatus 6 can measure the optical film thickness with higher accuracy than the conventional apparatus.
  • FIGS. 3 and (A) of FIG. 3 are diagrams showing the arrangement positions of the fibers in the first example.
  • FIG. 4 is a diagram showing the arrangement positions of the fibers in the comparative example.
  • FIGS. 5A and 5B are diagrams showing the arrangement positions of the fibers in the second example.
  • FIG. 6 is an explanatory diagram about the effectiveness of the arrangement position of the fiber according to the present embodiment, in which the solid line graph shows the data of the first example and the broken line graph shows the data of the comparative example.
  • (A) and (B) of Drawing 7 are figures showing other variations about the 2nd example.
  • FIGS. 8A and 8B are views showing the arrangement positions of the fibers in the third example. 3, 4, 6, 7, and 8, black circles indicate the arrangement positions of the irradiation side fibers f ⁇ b> 1, and white circles indicate the arrangement positions of the light reception side fibers f ⁇ b> 2.
  • the irradiation side fiber f1 and the light receiving side fiber f2 are arranged, and the irradiation side fiber f1 and the light receiving side fiber f2 are arranged. They are arranged so as to form spirals that are opposite to each other, and the entire bundle has a circular arrangement.
  • 3A and 3B show a configuration in which the arrangement position of the irradiation side fiber f1 and the arrangement position of the light receiving side fiber f2 are reversed with each other. Only the configuration shown in FIG.
  • the irradiation side fiber f1 and the light receiving side fiber f2 are arranged in a circular arc shape, more specifically, in a spiral shape.
  • the maximum incident angle is about 8.4 °, and the effective incident angle is about 1.5 °.
  • the maximum incident angle corresponds to half of the angle between the irradiation-side fiber f1 and the light-receiving side fiber f2 that are farthest from each other on the distal end surface of the optical sensor probe 13, and in FIG. This corresponds to half of the angle formed by the optical path of the light emitted from the irradiation side fiber f1 located on the outermost side and the optical path of the light directed to the light receiving side fiber f2 located in the center of the bundle.
  • the effective incident angle corresponds to half of the angle formed by the optical path of light emitted from the irradiation side fiber f1 and the optical path of light directed to the light receiving side fiber f2 adjacent to the fiber f1.
  • the maximum incident angle and the effective incident angle are smaller than those of the comparative example illustrated in FIG. More specifically, in the comparative example, the plurality of irradiation side fibers f1 are gathered in a semicircular shape, and the plurality of light receiving side fibers f2 are gathered in a semicircular shape. It has become.
  • the maximum incident angle is about 11.1 °, and the effective incident angle is about 6 °.
  • the maximum incident angle in the comparative example is an angle formed by the optical path of the light irradiated from the irradiation side fiber f1 located on the outermost side and the optical path of the light toward the light receiving side fiber f2 farthest from the fiber f1.
  • the effective incident angle in the comparative example corresponds to half of the angle formed by the optical path of the light emitted from the irradiation side fiber f1 at the center of gravity and the optical path of the light toward the light receiving side fiber f2 at the center of gravity. .
  • the center-of-gravity position is the center-of-gravity position of the fiber group assembled in a semicircular shape.
  • the diameter of the semicircle formed by the fiber group is r
  • the relative position of the center of gravity with respect to the center of the semicircle is It can be represented by the coordinates (0, 2r / ⁇ ).
  • the maximum incident angle and the effective incident angle are smaller than in the comparative example.
  • the degree of dispersion of each of the irradiation side fiber f1 and the light receiving side fiber f2 is larger than that of the comparative example, and the proportion of the irradiation side fiber f1 adjacent to the light receiving side fiber f2, and This is because the proportion of the light receiving side fiber f2 adjacent to the irradiation side fiber f1 becomes higher.
  • the effective light projection range is smaller than in the comparative example, and the measurement error of the optical film thickness is also reduced.
  • the relative reflected light amount (ratio of the reflected light amount to the incident light amount) in the range where the operating distance WD is 0 to 7 mm is larger. Therefore, when the operating distance WD is in the range of 0 to 7 mm, the first example can receive the reflected light with a higher amount of light than the comparative example. Thereby, the accuracy of the spectroscopic analysis in the spectroscope 14 is improved, and as a result, the measurement accuracy of the optical film thickness is improved.
  • the irradiation side fibers f1 and the light receiving side fibers f2 are arranged in an annular shape, and each fiber f1. , F2 are alternately arranged concentrically.
  • 5A and 5B show a configuration in which the arrangement position of the irradiation side fiber f1 and the arrangement position of the light receiving side fiber f2 are reversed with each other.
  • FIG. Only the configuration shown in FIG.
  • the irradiation-side fiber f1 and the light-receiving side fiber f2 are arranged in an annular shape, and thereby, uniform in each part of the effective light projection range of the monitor substrate Sm. Light can be irradiated with the amount of light, and the light reflected by the monitor substrate Sm can be received under uniform conditions.
  • the maximum incident angle is about 4.2 ° and the effective incident angle is about 1.5 °.
  • the relative reflected light amount is larger in the range where the operating distance WD is 0 to 7 mm than in the comparative example. For this reason, when the operating distance WD is in the range of 0 to 7 mm, the second example can receive the reflected light with a higher amount of light compared to the comparative example, and as a result, the spectroscope 14 uses the spectral light. The accuracy of analysis is improved, and the measurement accuracy of the optical film thickness is improved.
  • the fiber arrangement as shown in FIGS. 7A and 7B is adopted. It is good to do.
  • each of the irradiation side fiber f1 and the light receiving side fiber f2 is not arranged in an arc shape or an annular shape, and is different from the first example and the second example described above in this respect.
  • the irradiation side fibers f1 arranged in a substantially V-shape are 5 at regular intervals along the outer periphery of the bundle.
  • the light receiving side fibers f2 are arranged so as to fill the gaps and the center of the bundle, and the whole bundle has a circular arrangement.
  • the maximum incident angle is about 8.4 °, and the effective incident angle is about 1.5 °. Therefore, also in the third example, the maximum incident angle and the effective incident angle are reduced as compared with the comparative example, and the effective light projection range is also reduced.
  • 8A and 8B show a configuration in which the arrangement position of the irradiation side fiber f1 and the arrangement position of the light receiving side fiber f2 are reversed with respect to each other.
  • the present embodiment is only an example for facilitating the understanding of the present invention, and the above-described members, arrangements, and the like are as follows.
  • the present invention is not limited, and various modifications and improvements can be made in accordance with the spirit of the present invention, and the present invention includes the equivalents.
  • the contents described above as the size, dimension, shape, and material of each device constituting the thin film measuring apparatus are merely examples for demonstrating the effects of the present invention, and do not limit the present invention.
  • the vacuum deposition apparatus 100 that forms a film by a vacuum deposition method has been described as an example of the film deposition apparatus.
  • the deposition apparatus that forms a film by an ion plating method and the film deposition by an ion beam deposition method have been described.
  • the present invention can also be applied to the film forming apparatus.
  • the present invention is also applicable to a film forming apparatus that employs a sputtering method in which a film is formed by colliding ions with a target.
  • the distance between the tip surface of the optical sensor probe 13 and the film formation surface of the monitor substrate Sm is set to the bundle fiber diameter. We decided to make it more than twice. However, the present invention is not limited to this, and the distance between the tip surface of the optical sensor probe 13 and the film formation surface of the monitor substrate Sm may be less than twice the bundle fiber diameter.
  • an annular substrate is used as the monitor substrate Sm.
  • An annular substrate is effective, for example, when performing film thickness measurement with a quartz film thickness meter together with measurement of optical film thickness.
  • the crystal film thickness meter is disposed at a position corresponding to the center of the apparatus, specifically the center of the substrate holder 2 for reasons of the structure of the apparatus. It is because it can do.
  • the monitor substrate Sm is not limited to an annular substrate, and may be a substrate having another shape, for example, a disk-shaped substrate.
  • the monitor substrate Sm is not replaced during the period in which the multilayer film is formed on the actual substrate S, and the multilayer film is formed on the monitor substrate Sm side.
  • the present invention is not limited to this. It is not something. That is, the monitor substrate Sm may be replaced each time a film of each layer in the multilayer film is formed.
  • the monitor substrate Sm may be replaced each time a film of each layer in the multilayer film is formed.
  • the film forming apparatus that forms a multilayer film on the actual substrate S has been described as an example.
  • the present invention can also be applied to an apparatus that forms a single layer film on the actual substrate S.
  • Vacuum container 2 Substrate holder 2a Aperture 3 Evaporation mechanism 4 Shutter 5 Shutter control unit 6 Film thickness measuring device 11 Projector 12 DC stabilized power supply 13 Optical sensor probe 14 Spectrometer 15 Amplifier 16 A / D converter 17 Signal processing circuit 21 Light source 22 Light receiving device 23 Flexible Tube 24A Connection connector 24B Connection connector 24C Intermediate connector 25 Protective cylinder 25a Large diameter portion 25b Small diameter portion 100 Vacuum deposition apparatus f1 Irradiation side fiber f2 Light reception side fiber PC1 First computer PC2 Second computer PLC Programmable logic controller S Real substrate Sm Monitor substrate

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PCT/JP2012/065141 2012-06-13 2012-06-13 Dispositif de mesure d'épaisseur de film et dispositif de formation de film Ceased WO2013186879A1 (fr)

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JP2013510438A JP5319856B1 (ja) 2012-06-13 2012-06-13 膜厚測定装置及び成膜装置
PCT/JP2012/065141 WO2013186879A1 (fr) 2012-06-13 2012-06-13 Dispositif de mesure d'épaisseur de film et dispositif de formation de film
CN201280073820.2A CN104395690B (zh) 2012-06-13 2012-06-13 膜厚测量装置和成膜装置
HK15104929.1A HK1204490B (en) 2012-06-13 Device for measuring film thickness and device for forming film
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JPWO2017135303A1 (ja) * 2016-02-02 2018-11-22 コニカミノルタ株式会社 測定装置

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KR102414892B1 (ko) * 2016-04-19 2022-07-01 도쿄엘렉트론가부시키가이샤 온도 측정용 기판 및 온도 측정 시스템
KR102387341B1 (ko) 2017-05-23 2022-04-15 하마마츠 포토닉스 가부시키가이샤 배향 특성 측정 방법, 배향 특성 측정 프로그램, 및 배향 특성 측정 장치
EP3633351B1 (fr) * 2017-05-23 2023-03-29 Hamamatsu Photonics K.K. Procédé de mesure de caractéristique d'orientation, programme de mesure de caractéristique d'orientation et dispositif de mesure de caractéristique d'orientation
JP6394825B1 (ja) * 2018-02-08 2018-09-26 横河電機株式会社 測定装置および測定方法
CN112176309B (zh) * 2020-11-27 2021-04-09 江苏永鼎光电子技术有限公司 用于镀膜机的激光直接光控装置

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