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WO2013157770A1 - Procédé permettant de fabriquer, à l'aide d'un film inorganique, un film empêchant la pénétration d'humidité, film empêchant la pénétration d'humidité à l'aide d'un film inorganique, et dispositif d'étanchéité électrique/électronique - Google Patents

Procédé permettant de fabriquer, à l'aide d'un film inorganique, un film empêchant la pénétration d'humidité, film empêchant la pénétration d'humidité à l'aide d'un film inorganique, et dispositif d'étanchéité électrique/électronique Download PDF

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Publication number
WO2013157770A1
WO2013157770A1 PCT/KR2013/002953 KR2013002953W WO2013157770A1 WO 2013157770 A1 WO2013157770 A1 WO 2013157770A1 KR 2013002953 W KR2013002953 W KR 2013002953W WO 2013157770 A1 WO2013157770 A1 WO 2013157770A1
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Prior art keywords
film
moisture permeation
cycle
inorganic
permeation preventive
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Ceased
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English (en)
Japanese (ja)
Inventor
ソンミン チョ
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Kaneka Corp
Sungkyunkwan University
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Kaneka Corp
Sungkyunkwan University
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
    • C23C28/042—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/40—Coatings including alternating layers following a pattern, a periodic or defined repetition
    • C23C28/42—Coatings including alternating layers following a pattern, a periodic or defined repetition characterized by the composition of the alternating layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H05B33/04—Sealing arrangements, e.g. against humidity
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the present invention relates to a moisture permeation prevention film and a method for manufacturing the same, and more specifically, a water permeation prevention film including a structure in which two or more kinds of amorphous inorganic layers are alternately laminated, and the production thereof. It is about the method.
  • the moisture permeation preventive film extends the lifetime of an organic light emitting device (Organic Light Emitting Diode, OLED) or an organic device such as an organic solar cell (Organic Photovoltaic, OPV) made of an organic material that is vulnerable to moisture. This is absolutely necessary.
  • OLED Organic Light Emitting Diode
  • OPV Organic Photovoltaic
  • a conventional organic element formed on a non-bent substrate utilizes a glass encapsulation method in which the upper part of the element is covered with glass, and the surrounding part is sealed with a sealant to prevent moisture permeation. ing.
  • the present invention is for solving the problems of the prior art as described above, and an object of the present invention is to provide a moisture permeation preventive film constituted by alternately laminating two or more kinds of inorganic films and a method for manufacturing the same. Is to provide. Another object of the present invention is to provide a moisture permeation preventive film formed by laminating a homogeneous inorganic film containing two or more metal elements and a method for manufacturing the same. Another object of the present invention is to provide a method capable of preventing the deterioration of the function of the electronic element and enhancing the stability by using the novel moisture permeation preventive film as a thin film sealing material for the electric and electronic elements. It is to be.
  • the moisture permeation prevention film according to the present invention includes a structure in which a plurality of inorganic films in an amorphous state are formed as one unit structure, and the corresponding unit structures are alternately stacked.
  • Another moisture permeation prevention film according to the present invention is in an amorphous state and includes a homogeneous inorganic film containing a plurality of metal elements.
  • the method for manufacturing a moisture permeation prevention film according to the present invention includes a step of forming an inorganic film included in the moisture permeation prevention film by an atomic layer deposition method.
  • the sealing material for electric and electronic elements according to the present invention includes the moisture permeation preventive film.
  • the moisture permeation preventive film according to the present invention has a very low moisture permeability and a low crack generation rate, it is possible to extend the life of an electronic device using this as a thin film sealing material.
  • the moisture permeation preventive film according to the present invention prevents the penetration of moisture in electrical and electronic devices such as flexible OLEDs, and absorbs moisture in the device, thereby preventing deterioration of the functions of the electrical and electronic devices and improving stability. And can be suitably used as a sealing material.
  • FIG. 1 is a schematic view showing a moisture permeation preventive film according to the present invention.
  • FIG. 2 is a schematic view illustrating a moisture permeation prevention film according to another embodiment of the present invention.
  • FIG. 3 is a schematic view of a manufacturing apparatus used for manufacturing a moisture permeation preventive film according to the present invention.
  • FIG. 4a shows the result of the Ca test according to the thickness of the aluminum oxide film (Al2O3) and the zirconium oxide film (ZrO2)
  • FIG. 4b shows the result of testing the surface roughness according to the thickness of the zirconium oxide film.
  • Show. 5a and 5b are schematic diagrams showing the film formation process of two types of inorganic films.
  • FIG. 6 shows the results of Ca tests for several oxide films.
  • FIG. 7 is an electron microscope photograph of a moisture permeation preventive film manufactured by the method according to the present invention.
  • FIG. 8 shows the results of the Ca test of the example according to the present invention and the comparative example.
  • FIG. 9 shows the results of the Ca test of the example according to the present invention and the comparative example.
  • FIG. 10 is a schematic diagram illustrating a laminated structure for an optical Ca test.
  • FIG. 11 shows the results of measurement of an example according to the present invention using an optical Ca test.
  • FIG. 1 shows a schematic view of one embodiment of a moisture permeation preventive film according to the present invention.
  • the moisture permeation prevention film (100) includes a substrate (110), an amorphous inorganic film (120) and an amorphous inorganic film (130) laminated alternately on the substrate (110).
  • a substrate of the moisture permeation preventive film according to the present invention a metal oxide, a semiconductor substrate, a plastic substrate, or the like is used.
  • the inorganic film in the moisture permeation preventive film according to the present invention can be formed by laminating two or more kinds of inorganic substances as long as they are inorganic substances that can be manufactured into a thin film.
  • an oxide or a nitride is used, and for example, it can be selected from the group consisting of Al2O3, ZrO2, ZnO, TiO2, HfO2, and CeO2.
  • the thickness of each of the unitary inorganic film (120) and inorganic film (130) is in the range of 0.01 to 10 nm, preferably 0.05 to 5 nm, which can maintain an amorphous state. You can choose from.
  • the moisture permeation prevention film (100) is described as being formed by laminating two kinds of inorganic films, but the present invention is not limited to this, and three or more kinds of different materials are used. These inorganic films can be formed by stacking, and the structure is not limited to being alternately stacked.
  • the ratio of the thickness of each inorganic film in such a moisture permeation prevention film and the relative thickness between the inorganic films is not limited to the above range, but the type of elements constituting the inorganic film and the moisture permeation As long as the water vapor transmission rate required for the present invention is satisfied in relation to different factors such as the degree of prevention of moisture, the rigidity of the moisture permeation prevention film, the type and size of the applied element, etc. It can be adjusted to any thickness.
  • the moisture permeation prevention film according to the present invention is formed by alternately laminating a plurality of inorganic films, so that one layer of the inorganic film is formed to have a predetermined thickness or more, and is not in an amorphous state, for example, a polycrystalline state.
  • FIG. 2 is a schematic view illustrating a moisture permeation prevention film according to another embodiment of the present invention.
  • the moisture permeation prevention film (240) includes a homogeneous inorganic film (220) containing two kinds of metal elements (FIG. 2 (a)). When two types of sub-inorganic films containing different metal elements are alternately deposited, if the thickness of each sub-inorganic film is a predetermined value or less, a single film with no boundary between the films is formed.
  • An inorganic film (220) can be formed by vapor deposition a plurality of times.
  • the two types of sub-inorganic films each form a homogeneous inorganic film having no boundary when alternately deposited to a thickness of 0.1 to 5 mm, or more preferably to a thickness of 0.8 to 1.2 mm. be able to.
  • the relative thickness ratio between the two sub-inorganic films can be selected from the range of 10% to 90%, preferably 30 to 70%, and more preferably 40 to 60%.
  • Another moisture permeation prevention film (290) of the present invention includes a homogeneous inorganic film (280) made by depositing an inorganic film (270) and two or more sub-inorganic films on a substrate (260). (FIG. 2 (b)). A method for producing the moisture permeation preventive membrane of the present invention will be described. FIG.
  • the manufacturing apparatus (300) may include a substrate loader chamber (310), a substrate transfer chamber (320), and a deposition chamber (330, 340), and each chamber may be maintained in a vacuum state. The degree of vacuum in each chamber may be different.
  • the substrate Once the substrate is placed in the substrate loader chamber (310), the substrate can be loaded into the deposition chamber (330, 340) through the substrate transfer chamber (320).
  • a plurality of inorganic films are sequentially formed by atomic layer deposition in one of the deposition chambers (330, 340).
  • a water permeation preventive film can be manufactured by alternately depositing a plurality of inorganic films.
  • the present invention is not limited to the formation of a plurality of inorganic films in the same chamber.
  • the first inorganic film is formed in a deposition chamber (330) and the second inorganic film is formed.
  • various deposition methods such as a molecular layer deposition method can be applied.
  • a specific method for manufacturing the moisture permeation prevention film according to the present invention is as follows. First, a by-product gas in the chamber is purged with argon (Ar) gas on the PEN substrate (110) in the vacuum chamber.
  • one gas in H 2 O, ozone, and oxygen radicals is injected at a pressure of 170 mtorr, and purged again with an argon gas of 560 mtorr.
  • One gas in H 2 O, ozone, and oxygen radicals can be injected at a pressure of 130 to 210 mtorr.
  • a TEMAZ (tetraethyl methylamino zirconium) gas which is a source gas of a zirconium oxide film, is injected at a pressure of 320 mtorr for 2 seconds, a zirconium oxide film is formed.
  • the injection pressure of the TEMAZ gas may be 260 mtorr or more and 380 mtorr or less. Thereafter, the by-product gas in the chamber is purged again with argon gas to complete the first cycle. In the next cycle, one gas in H 2 O, ozone, and oxygen radicals is injected and purged with argon (Ar) gas, and then, for example, TMA (trimethyl aluminum) gas, which is a source gas of an aluminum oxide film, is 300 mtorr for 2 seconds. Inject with.
  • the injection pressure of TMA gas may be 240 mtorr or more and 360 mtorr or less. Thereafter, the by-product gas in the chamber is purged again with argon gas to complete the second cycle.
  • the deposition temperature is about 80 ° C., and the base vacuum is 6 ⁇ 10 ⁇ 3 torr or less.
  • inorganic films (120, 130) having a predetermined thickness can be formed. For example, if the first cycle is repeated for about 100 times, a zirconium oxide film having a thickness of about 9 nm can be formed. If the second cycle is repeated for about 100 times, an aluminum having a thickness of 11 nm is formed. An oxide film can be formed. Alternatively, the zirconium oxide film per cycle can be formed to a thickness of 0.6 to 1.2 mm, and the aluminum oxide film can be formed to a thickness of 0.8 to 1.4 mm. .
  • the boundary between the zirconium oxide film and the aluminum oxide film is not divided, that is, a homogeneous inorganic film (ZrAlO) containing both zirconium and aluminum. is there.
  • a homogeneous inorganic film ZrAlO
  • a homogeneous inorganic film 220
  • the inorganic film (120) can be formed by continuously repeating the first cycle
  • the inorganic film (130) can be formed by repeating the second cycle in the same manner.
  • the moisture permeation preventive film (100) having a predetermined thickness can be formed.
  • the thickness of each inorganic film is limited to a thickness that can maintain the amorphous state. Specifically, when the inorganic film (120) is a zirconium oxide film, the thickness is 0.1 nm or more and 4 nm or less, and when the inorganic film (130) is an aluminum oxide film, the thickness is preferably 0.1 nm or more. .
  • the present invention is not limited to the range of parameters such as pressure and temperature described in relation to the manufacturing process, and can be adjusted to any parameters as long as the effects required by the present invention are satisfied. FIG.
  • FIG. 4A shows the results of the Ca test according to the thickness of the aluminum oxide film (Al 2 O 3) and the zirconium oxide film (ZrO 2).
  • FIG. 4B shows the surface roughness according to the thickness of the zirconium oxide film. It shows the result of measuring the thickness.
  • the characteristics of the moisture permeation preventive film were investigated by using a Ca test method in which the water permeability is known from the degree that Ca is oxidized by the water vapor passing through the moisture permeable film and the conductivity is reduced. In the case of an aluminum oxide film that is a single film, the water permeability decreases in proportion to the thickness as the film thickness increases from 1 nm to 6 nm, whereas in the case of a zirconium oxide film, the film thickness increases.
  • the moisture permeability is greatly reduced when the thickness is from 1 nm to 4 nm, but the moisture permeability is increased when the thickness is 5 nm rather than when the thickness is 4 nm (FIG. 4a).
  • Such an increase in water permeability is related to the fact that the film changes from an amorphous state to a polycrystalline state as the zirconium oxide film becomes thicker.
  • the surface roughness of a zirconium oxide film having a film thickness of 1 nm to 9 nm was measured by AFM (atomic force measurement) (FIG. 4b).
  • FIG. 5a shows the results of the Ca test of a plurality of types of oxide films having a thickness of 10 nm. As the thickness of the aluminum oxide film, which is a single film, increases, the time required to oxidize Ca through the corresponding film increases, i.e., the moisture permeability decreases.
  • the film thickness is 4 nm to 5 nm, the moisture permeability increased, but when the film thickness is 5 nm or more, the moisture permeability decreases again.
  • the unit thickness is compared with an aluminum oxide film of the same thickness. , 20% or more moisture permeability decreases.
  • a 10 nm film deposited several times as a unit structure with a homogeneous oxide film formed by depositing a zirconium oxide film and an aluminum oxide film for each cycle by an atomic layer deposition method is compared with an aluminum oxide film of the same thickness.
  • the moisture permeability is reduced by 50% or more.
  • the zirconium oxide film can be formed to a thickness of 9 nm
  • the aluminum oxide film can be formed to a thickness of 11 nm.
  • FIG. 7 shows the atomic layer deposition method, in which a zirconium oxide film and an aluminum oxide film formed on a silicon substrate in one cycle each are grown multiple times as a unit structure by an atomic layer deposition method, and the total thickness is 50 nm. It is an electron micrograph of the film thickness. It can be confirmed from the corresponding photograph that a uniform single layer (AlZrO) is formed.
  • Example 1 a 5 nm aluminum oxide film (Al 2 O 3) and a 5 nm zirconium oxide film (ZrO 2) are deposited three times as one unit structure, and the total thickness is 30 nm.
  • Example 2 a 2.5 nm aluminum oxide film (Al 2 O 3) and a 2.5 nm zirconium oxide film (ZrO 2) are deposited six times as one unit structure, and the total thickness is 30 nm.
  • Example 3 a 4 nm aluminum oxide film (Al 2 O 3) and a 1 nm zirconium oxide film (ZrO 2) are deposited six times as one unit structure, and the total thickness is 30 nm.
  • Example 4 a 1.5 nm aluminum oxide film (Al 2 O 3) and a 0.5 nm zirconium oxide film (ZrO 2) are vapor-deposited 15 times as one unit structure, and the total thickness is 30 nm.
  • Example 5 a 1 nm aluminum oxide film (Al 2 O 3) and 1 nm zirconium (ZrO 2) are vapor-deposited 15 times as one unit structure, and the total thickness is 30 nm.
  • Example 6 a 0.5 nm aluminum oxide film (Al 2 O 3) and 1.5 nm zirconium (ZrO 2) are vapor-deposited 15 times as one unit structure, and the total thickness is 30 nm.
  • Example 7 a 1 nm aluminum oxide film (Al2O3) and 4 nm zirconium (ZrO2) were vapor-deposited six times as one unit structure, and the total thickness was 30 nm.
  • Example 8 an aluminum oxide film (Al 2 O 3) and a zirconium oxide film (ZrO 2), each deposited in one cycle, were deposited 150 times as one unit structure, and the total thickness was 30 nm.
  • Example 9 a 10 nm aluminum oxide film (Al 2 O 3) and 10 nm zirconium (ZrO 2) deposited by the ALD method are vapor-deposited five times as one unit structure, and the total thickness is 100 nm.
  • Comparative Example 1 is an aluminum oxide film (Al2O3) having a thickness of 30 nm.
  • Comparative Example 2 is a zirconium oxide film (ZrO2) having a thickness of 30 nm.
  • FIG. 8 shows the results of the Ca tests of Examples 1, 2, 5, and 8 and Comparative Examples 1 and 2 performed at 85 ° C.
  • the thickness ratio of the aluminum oxide film (Al2O3) and the zirconium oxide film (ZrO2) in the unit structure is 1: 1 and the same, but between the aluminum oxide film and the zirconium oxide film The number of boundaries is 5, 11, 29, and 300, respectively. As can be seen from FIGS.
  • FIG. 9 shows the results of the Ca tests of Examples 1 to 8 and Comparative Examples 1 and 2 performed at 85 ° C.
  • Examples 1 to 8 in which aluminum oxide films and zirconium oxide films are alternately laminated as a unit structure are excellent in preventing moisture permeation. Also in the example, compared with the group B (Examples 1 to 5), the moisture permeation preventing effect of the group C (Examples 6 to 8) in which the aluminum oxide film is thin is superior.
  • the thicknesses of the zirconium oxide films in the unit structures of Examples 6 and 7 in Group C are 1.5 nm and 4 nm, respectively, which are higher than those in Group B.
  • FIG. 10 is a schematic view of a sample for an optical Ca test used for measuring the moisture permeability of the membrane.
  • the sample can be prepared by vapor-depositing Ca and aluminum on a glass substrate, and vapor-depositing a moisture permeation prevention film (1040) to be a moisture permeability measurement target on the aluminum. If moisture passes through the sample with time and reaches Ca and oxidation of Ca proceeds, the water permeability can be measured by observing the degree.
  • FIG. 11 shows the result of optical Ca testing of Example 9 over time in an environment of a temperature of 85 ° C. and a relative humidity of 85%. According to the measurement results, it was confirmed that Example 9 did not cause oxidation of Ca until at least 900 hours. In consideration of the fact that the environment of 85 ° C. and 85% relative humidity is an accelerated environment that is about 250 times the normal temperature environment, Example 9 does not allow moisture to pass through at least 225,000 hours or more in the normal temperature environment. Be expected.
  • the moisture permeation preventive film according to the present invention prevents the penetration of moisture in an electric or electronic device such as a flexible OLED and absorbs moisture in the device, thereby preventing the function of the electrical or electronic device from being lowered and improving the stability. And can be suitably used as a sealing material.
  • Moisture permeation prevention film 110 100, 240, 290, 1040 Moisture permeation prevention film 110, 210, 260 Substrate 120, 130, 270 Inorganic film 220, 280 Homogeneous inorganic film containing two or more metals 300 Moisture permeation prevention film manufacturing apparatus 310 Substrate loader chamber 320 Substrate transfer chamber 330, 340 Deposition chamber

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  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
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  • Chemical Kinetics & Catalysis (AREA)
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  • Electroluminescent Light Sources (AREA)
PCT/KR2013/002953 2012-04-18 2013-04-09 Procédé permettant de fabriquer, à l'aide d'un film inorganique, un film empêchant la pénétration d'humidité, film empêchant la pénétration d'humidité à l'aide d'un film inorganique, et dispositif d'étanchéité électrique/électronique Ceased WO2013157770A1 (fr)

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KR1020120040319A KR20130117510A (ko) 2012-04-18 2012-04-18 무기막을 이용한 수분 투과 방지막의 제조 방법, 무기막을 이용한 수분 투과 방지막 및 전기, 전자 봉지 소자
KR10-2012-0040319 2012-04-18

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Cited By (1)

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EP3382060A1 (fr) * 2017-03-31 2018-10-03 Linde Aktiengesellschaft Procédé de revêtement d'un composant et appareil de manipulation de fluide de composant

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KR101793897B1 (ko) 2016-05-17 2017-11-06 주식회사 테스 발광소자의 보호막 증착방법
KR102799270B1 (ko) * 2017-01-05 2025-04-23 주성엔지니어링(주) 투습 방지막과 그 제조 방법

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JP2010541159A (ja) * 2007-09-26 2010-12-24 イーストマン コダック カンパニー 薄膜封止層を形成する方法
WO2011030004A1 (fr) * 2009-09-14 2011-03-17 Beneq Oy Revêtement multicouche, procédé de fabrication d'un revêtement multicouche et usages de ce dernier

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JP2010541159A (ja) * 2007-09-26 2010-12-24 イーストマン コダック カンパニー 薄膜封止層を形成する方法
WO2011030004A1 (fr) * 2009-09-14 2011-03-17 Beneq Oy Revêtement multicouche, procédé de fabrication d'un revêtement multicouche et usages de ce dernier

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EP3382060A1 (fr) * 2017-03-31 2018-10-03 Linde Aktiengesellschaft Procédé de revêtement d'un composant et appareil de manipulation de fluide de composant
WO2018177743A1 (fr) * 2017-03-31 2018-10-04 Linde Ag Procédé de revêtement d'un composant et appareil pour composants à gestion de fluide

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