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WO2013039181A1 - Tampon de polissage - Google Patents

Tampon de polissage Download PDF

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Publication number
WO2013039181A1
WO2013039181A1 PCT/JP2012/073538 JP2012073538W WO2013039181A1 WO 2013039181 A1 WO2013039181 A1 WO 2013039181A1 JP 2012073538 W JP2012073538 W JP 2012073538W WO 2013039181 A1 WO2013039181 A1 WO 2013039181A1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing
groove
degrees
polishing pad
grooves
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2012/073538
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English (en)
Japanese (ja)
Inventor
陽平 野呂
奥田　良治
誠司 福田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toray Industries Inc
Original Assignee
Toray Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toray Industries Inc filed Critical Toray Industries Inc
Priority to US14/344,988 priority Critical patent/US20140378035A1/en
Priority to EP12832538.8A priority patent/EP2757578A4/fr
Priority to SG11201400614RA priority patent/SG11201400614RA/en
Priority to KR1020147008470A priority patent/KR20140062095A/ko
Priority to CN201280044813.XA priority patent/CN103782372A/zh
Publication of WO2013039181A1 publication Critical patent/WO2013039181A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved

Definitions

  • the present invention relates to a polishing pad. More specifically, the present invention relates to a polishing pad that is preferably used for forming a flat surface in semiconductors, dielectric / metal composites, integrated circuits, and the like.
  • CMP Chemical Mechanical Polishing
  • a CMP apparatus includes a polishing head that holds a semiconductor wafer that is an object to be processed, a polishing pad for polishing the object to be processed, and a polishing surface plate that holds the polishing pad.
  • a polishing technique called CMP is a technique for polishing a material to be polished while supplying slurry using a polishing pad having a polishing layer.
  • CMP polishing of a semiconductor wafer is performed by using a slurry to move a semiconductor wafer (hereinafter simply referred to as a wafer) and a polishing pad relative to each other to remove a protruding portion of a layer on the wafer surface.
  • the surface layer is flattened.
  • CMP polishing has required characteristics such as local flatness of wafer, global flatness, prevention of defects, and high polishing rate. Therefore, in order to achieve these required characteristics, various ingenuity has been made with respect to the polishing pad groove configuration (groove pattern, groove cross-sectional shape, etc.), which is one of the major factors affecting polishing characteristics. Has been made.
  • Patent Document 1 a technique is known in which the cross-sectional shape of a groove formed on the surface of the polishing layer is V-shaped or U-shaped, and the groove pattern is spiral or stitched to stabilize the polishing characteristics.
  • the present inventors provide an inclined surface at a specific angle at the boundary between the polishing surface and the groove, so that a suction force acts between the wafer and the polishing pad, the polishing rate is increased, and in-plane uniformity is achieved. Found to be good. Since it is important to provide an inclined surface at the boundary between the polishing surface and the groove, this also applies to a groove having a V-shaped cross section, for example. In consideration of the manufacturing process, the cross-sectional shape of the groove is preferable because it is a simple figure.
  • the present inventors have the functions of supplying and discharging the slurry at the end of the life of the polishing pad when the polishing pad is worn and the cross-sectional area of the groove is reduced.
  • polishing defects increase due to insufficientness.
  • the present invention reduces the function of supplying and discharging slurry even if the polishing pad wears according to the use of the polishing pad while maintaining a high polishing rate and good in-plane uniformity. It is an object of the present invention to provide a polishing pad in which polishing defects caused by this do not increase.
  • the present inventors use a polishing pad (for example, a V shape) having an inclined surface at a specific angle at the boundary between the polishing surface and the groove for increasing the polishing rate and improving in-plane uniformity, and a polishing pad. Accordingly, even if the polishing pad was worn out, it was thought that it could be eliminated by combining grooves for maintaining the slurry supply and discharge functions (for example, I-shaped or trapezoids close to I-shaped grooves).
  • a polishing pad for example, a V shape
  • the polishing pad of the present invention is a polishing pad for chemical mechanical polishing having at least a polishing layer, and has a first groove and a second groove on a polishing surface of the polishing layer.
  • Each of the two grooves has a side surface continuous with the polishing surface at an edge portion in each groove width direction, and the first groove has at least one of the edge surfaces in the groove width direction and the polishing surface.
  • the angle formed by the side surface continuous with the polishing surface is greater than 105 degrees and 150 degrees or less, and the second groove is continuous with the polishing surface and the polishing surface at both of two edge portions in the groove width direction.
  • the angle formed with the side surface is 60 degrees or more and 105 degrees or less.
  • the polishing pad wears as the polishing pad is used, and polishing without increasing polishing defects even if the slurry supply and discharge functions are reduced.
  • a pad can be provided.
  • FIG. 1A is a diagram showing a cross-sectional shape (first example) of a first groove of a polishing pad according to an embodiment of the present invention.
  • FIG. 1B is a diagram showing a cross-sectional shape (second example) of the first groove of the polishing pad according to the embodiment of the present invention.
  • FIG. 1C is a diagram showing a cross-sectional shape (third example) of the first groove of the polishing pad according to the embodiment of the present invention.
  • FIG. 1D is a diagram showing a cross-sectional shape (fourth example) of the first groove of the polishing pad according to the embodiment of the present invention.
  • FIG. 1A is a diagram showing a cross-sectional shape (first example) of a first groove of a polishing pad according to an embodiment of the present invention.
  • FIG. 1B is a diagram showing a cross-sectional shape (second example) of the first groove of the polishing pad according to the embodiment of the present invention.
  • FIG. 1C is a diagram showing
  • FIG. 2A is a diagram showing a cross-sectional shape (first example) of a second groove of the polishing pad according to the embodiment of the present invention.
  • FIG. 2B is a diagram showing a cross-sectional shape (second example) of the second groove of the polishing pad according to the embodiment of the present invention.
  • FIG. 2C is a diagram showing a cross-sectional shape (third example) of the second groove of the polishing pad according to the embodiment of the present invention.
  • FIG. 2D is a diagram showing a cross-sectional shape (fourth example) of the second groove of the polishing pad according to the embodiment of the present invention.
  • FIG. 2E is a diagram showing a cross-sectional shape (fifth example) of the second groove of the polishing pad according to the embodiment of the present invention.
  • FIG. 2F is a diagram showing a cross-sectional shape (sixth example) of the second groove of the polishing pad according to the embodiment of the present invention.
  • FIG. 3A is a cross-sectional view illustrating a configuration example (first example) of a unit unit including first and second grooves.
  • FIG. 3B is a cross-sectional view illustrating a configuration example (second example) of a unit unit including first and second grooves.
  • FIG. 3C is a cross-sectional view illustrating a configuration example (third example) of the unit unit including the first and second grooves.
  • FIG. 3D is a cross-sectional view illustrating a configuration example (fourth example) of a unit unit including first and second grooves.
  • FIG. 3A is a cross-sectional view illustrating a configuration example (first example) of a unit unit including first and second grooves.
  • FIG. 3B is a cross-sectional view illustrating a configuration example (second example) of a unit unit including first and second
  • FIG. 3E is a cross-sectional view illustrating a configuration example (fifth example) of a unit unit including first and second grooves.
  • FIG. 3F is a cross-sectional view illustrating a configuration example (sixth example) of the unit unit including the first and second grooves.
  • FIG. 3G is a cross-sectional view illustrating a configuration example (seventh example) of the unit unit including the first and second grooves.
  • FIG. 3H is a cross-sectional view illustrating a configuration example (eighth example) of the unit unit including the first and second grooves.
  • FIG. 3I is a cross-sectional view illustrating a configuration example (ninth example) of a unit unit including the first and second grooves.
  • FIG. 4 is a diagram schematically showing an arrangement example of the first grooves on the polishing surface of the polishing pad according to the embodiment of the present invention.
  • the polishing pad of the present invention is a polishing pad having at least a polishing layer, and has a groove A (first groove) and a groove B (second groove) on the polishing surface of the polishing layer.
  • the groove A and the groove B have side surfaces that are continuous with the polishing surface at the edge portions in the groove width direction.
  • the angle formed by the polishing surface and the side surface continuous with the polishing surface is greater than 105 degrees and 150 degrees or less.
  • the angle formed between the polishing surface and the side surface continuous with the polishing surface is 60 degrees or more and 105 degrees or less at both edge portions in the two groove width directions.
  • a groove A104 shown in FIG. 1D has a recess 5 formed between two side surfaces 2 in a direction perpendicular to the polishing surface 1, and the bottom surface thereof is parallel to the polishing surface 1.
  • the groove A constituting the polishing pad is not necessarily one type.
  • at least one of the edge portions in the groove width direction has a plurality of different cross-sectional shapes such that at least one of the angle formed between the polishing surface and the side surface continuous with the polishing surface is greater than 105 degrees and less than 150 degrees. It is also possible to constitute a polishing pad by combining grooves. From the viewpoint of in-plane uniformity, it is more preferable to configure the polishing pad with one type of groove A.
  • the groove cross-sectional shape when the groove cross-sectional shape is only V-shaped, it has a sufficient slurry supply and discharge function at the initial stage of polishing. In some cases, the discharge is not performed sufficiently, and defects such as an increase in defects and a wafer adsorbing to the polishing pad may occur.
  • FIG. A groove B201 shown in FIG. 2A has a rectangular cross-sectional shape.
  • the groove B201 has two side surfaces 2 that are respectively continuous with the polishing surface 1 at the edge in the groove width direction.
  • the angle ⁇ B formed between the polishing surface and the side surface continuous to the polishing surface is equal to each other at the two edge portions in the groove width direction, and the value is 90 degrees.
  • the groove B201 has a rectangular cross-sectional shape, and the bottom surface 6 is parallel to the polishing surface 1.
  • a groove B202 shown in FIG. 2B has a substantially U-shaped bottom surface 7 between two side surfaces 2.
  • the side surface continuous with the polishing surface in the groove B not only a straight line but also a curve, as long as the angle between the polishing pad and the polishing surface at the edge can be maintained at 60 ° or more and 105 ° or less.
  • a broken line, a straight line having a plurality of bending points, a wavy line, or a combination thereof may be used.
  • the area occupation ratio of the groove A per groove area is a ratio of the area of the groove A per area of the groove formed on the polishing surface, and the groove A per area of the groove formed on the polishing surface. Is preferably 30% or more and 90% or less, more preferably 40% or more, and further preferably 50% or more. Further, the area occupation ratio of the groove A per groove area is more preferably 80% or less, and further preferably 70% or less.
  • grooves that can be taken by normal polishing pads such as lattice shape, dimple shape, spiral shape, concentric circle shape, etc. to suppress hydroplane phenomenon and to prevent the wafer and pad from sticking ( Grooves) may be provided, and combinations thereof are also preferably used, but a lattice shape is particularly preferable.
  • the lattice shape is a shape in which lines are combined at right angles to a grid. In the lattice shape, when the vertical and horizontal grooves are equally spaced, when the vertical groove interval is narrower than the horizontal groove interval, or when the horizontal groove interval is narrower than the vertical groove interval Multiple cases are possible.
  • the total length of the grooves A formed on the entire polishing surface is 10% or more and 90% or less of the total groove length of the grooves formed on the polishing surface. Preferably, it is 20% or more, more preferably 25% or more, still more preferably 30% or more, and particularly preferably 35% or more. Further, the total length of the grooves A among the grooves formed on the polished surface is more preferably 80% or less, further preferably 70% or less, and further preferably 60% or less. Is particularly preferably 55% or less.
  • the ratio of the total groove length of the grooves A formed on the polishing surface to the total groove length of all the grooves is within the above range, a suction force acts between the wafer and the polishing pad, and the polishing rate Expresses the effect of rising.
  • the method for forming a groove formed on the polishing surface of the polishing pad it is possible to form the groove A so as to be concentrated at the center of the polishing pad and form the groove B in the remaining portion.
  • the groove A is a region including two straight lines that pass through the center of the polishing pad and are orthogonal to each other, and the distance from at least one of the two straight lines is that of the polishing pad.
  • FIG. 4 is a diagram schematically showing an arrangement example of the grooves A on the polishing surface of the polishing pad.
  • the groove A403 (indicated by a thick line) is an area including two straight lines L 1 and L 2 passing through the center O of the polishing surface 402 on the circular polishing surface 402. The minimum distance from at least one of the two straight lines is 1/3 (about 33%) or less of the radius r.
  • the broken line shown in FIG. 4 has shown groove
  • the XY lattice shape when applied as the groove shape, it is more preferable to disperse the grooves A403 in two orthogonal directions (X direction and Y direction) than to concentrate the grooves A403 in only one direction. .
  • a polishing pad can be configured based on a unit unit as shown in any of FIGS. 3A to 3H.
  • the ratio of the number of grooves A to the total number of grooves as a combination of grooves is not limited to the example.
  • the groove widths of the groove A and the groove B are preferably 0.1 mm or more and 10 mm or less, and more preferably 0.3 mm or more, because it is necessary to have a cross-sectional area capable of supplying and discharging the slurry. More preferably, it is 0.5 mm or more. Further, the groove width of the groove A and the groove B is more preferably 8 mm or less, and further preferably 5 mm or less.
  • the groove depths of the groove A and the groove B are preferably 0.2 mm or more and 4 mm or less, more preferably 0.3 mm or more, because it is necessary to ensure supply and discharge of slurry and a sufficient life. More preferably, it is 0.4 mm or more. Further, the groove depths of the groove A and the groove B are more preferably 3 mm or less, and further preferably 2 mm or less.
  • the thickness of the polishing layer is preferably 4.0 mm or less, more preferably 3.5 mm or less, as long as it is smaller than the distance from the upper surface of the surface plate of the polishing apparatus to the lower surface of the polishing head. It is more preferably 0 mm or less, and particularly preferably 2.5 mm or less.
  • the polishing layer constituting the polishing pad has a micro rubber A hardness of 70 degrees or more and a structure having closed cells to form a flat surface in a semiconductor, a dielectric / metal composite, an integrated circuit, or the like. Therefore, it is preferable.
  • materials for forming such a structure include polyethylene, polypropylene, polyester, polyurethane, polyurea, polyamide, polyvinyl chloride, polyacetal, polycarbonate, polymethyl methacrylate, polytetrafluoroethylene, epoxy resin, ABS resin, AS resin, phenol resin, melamine resin, “neoprene (registered trademark)” rubber, butadiene rubber, styrene butadiene rubber, ethylene propylene rubber, silicon rubber, fluororubber, and resins mainly composed of these. Two or more of these may be used. Even in such a resin, a material mainly composed of polyurethane is more preferable in that the closed cell diameter can be controlled relatively easily.
  • Polyurethane is a polymer synthesized by polyaddition reaction or polymerization reaction of polyisocyanate.
  • the polyisocyanate include tolylene diisocyanate, diphenylmethane diisocyanate, naphthalene diisocyanate, hexamethylene diisocyanate, and isophorone diisocyanate.
  • the polyisocyanate is not limited thereto, and two or more of these may be used.
  • the compound used as the reaction partner of the polyisocyanate is an active hydrogen-containing compound, that is, a compound containing two or more polyhydroxy groups or amino groups.
  • the polyhydroxy group-containing compound is typically a polyol, and examples thereof include polyether polyol, polytetramethylene ether glycol, epoxy resin-modified polyol, polyester polyol, acrylic polyol, polybutadiene polyol, and silicone polyol. It may be used. It is preferable to determine the combination and optimum amount of polyisocyanate and polyol, catalyst, foaming agent, and foam stabilizer depending on the hardness, the cell diameter and the expansion ratio.
  • the chemical foaming method is generally used by blending various foaming agents into the resin during polyurethane production, but it is cured after foaming the resin by mechanical stirring.
  • the method of making it can also be used preferably.
  • the average cell diameter of the closed cells is preferably 20 ⁇ m or more, more preferably 30 ⁇ m or more from the viewpoint of holding the slurry on the pad surface.
  • the average cell diameter of closed cells is preferably 150 ⁇ m or less, more preferably 140 ⁇ m or less, and still more preferably 130 ⁇ m or less, from the viewpoint of ensuring the flatness of local irregularities of the semiconductor substrate.
  • the average bubble diameter is observed in a circular shape that is missing at the edge of the field among the bubbles observed in one field of view when the sample cross section is observed at 400 times magnification with a VK-8500 ultra-deep microscope manufactured by Keyence.
  • the equivalent circle diameter is measured from the cross-sectional area by an image processing apparatus, and the number average value is calculated.
  • a preferred embodiment of the polishing pad according to the present invention is a pad containing a polymer of a vinyl compound and polyurethane and having closed cells.
  • the toughness and hardness can be increased only with the polymer from the vinyl compound, it is difficult to obtain a uniform polishing pad having closed cells.
  • Polyurethane becomes brittle when its hardness is increased.
  • a vinyl compound is a compound having a polymerizable carbon-carbon double bond. Specifically, methyl acrylate, methyl methacrylate, ethyl acrylate, ethyl methacrylate, n-butyl acrylate, n-butyl methacrylate, 2-ethylhexyl methacrylate, isodecyl methacrylate, isobutyl methacrylate, n-lauryl methacrylate, 2-hydroxyethyl methacrylate, 2 -Hydroxypropyl methacrylate, 2-hydroxybutyl methacrylate, dimethylaminoethyl methacrylate, diethylaminoethyl methacrylate, glycidyl methacrylate, ethylene glycol dimethacrylate, acrylic acid, methacrylic acid, fumaric acid, dimethyl fumarate, diethyl fumarate, dipropyl fumarate, malein Acid, dimethyl maleate,
  • Polymerization initiators preferably used for obtaining polymers of these vinyl compounds include azobisisobutyronitrile, azobis (2,4-dimethylvaleronitrile), azobiscyclohexanecarbonitrile, benzoyl peroxide, lauroyl peroxide. Examples thereof include radical initiators such as oxide and isopropyl peroxydicarbonate. Two or more of these may be used.
  • a redox polymerization initiator for example, a combination of a peroxide and an amine can also be used.
  • a method for impregnating a polyurethane with a vinyl compound a method of immersing the polyurethane in a container containing a vinyl compound can be mentioned.
  • the polymer and polyurethane content obtained from the polymerized and cured vinyl compound in polyurethane can be measured by a pyrolysis gas chromatography / mass spectrometry method.
  • a pyrolysis gas chromatography / mass spectrometry method As an apparatus that can be used in this method, a double shot pyrolyzer “PY-2010D” (manufactured by Frontier Laboratories) is used as a thermal decomposition apparatus, and “TRIO-1” (manufactured by VG) is used as a gas chromatograph / mass spectrometer. Can be mentioned.
  • the polishing pad may contain various additives such as an abrasive, an antistatic agent, a lubricant, a stabilizer, and a dye for the purpose of improving characteristics.
  • the micro rubber A hardness of the polishing layer is a value evaluated by a micro rubber hardness meter MD-1 manufactured by Kobunshi Keiki Co., Ltd.
  • the micro rubber A hardness meter MD-1 makes it possible to measure the hardness of thin and small objects, which are difficult to measure with a conventional hardness meter.
  • the micro rubber A hardness tester MD-1 is designed and manufactured as a reduced model of about 1/5 of the spring type rubber hardness tester (durometer) A type. Therefore, the measurement conforms to the hardness of the spring type hardness tester A type. A value is obtained.
  • a normal polishing pad cannot be evaluated with a spring type rubber hardness tester A type because the thickness of the polishing layer or hard layer is less than 5 mm. Therefore, in the present invention, the micro rubber A hardness of the polishing layer is evaluated by the micro rubber MD-1.
  • the hardness of the polishing layer is preferably 70 degrees or more, more preferably 80 degrees or more in terms of micro rubber A hardness, from the viewpoint of the flatness of local irregularities of the semiconductor substrate.
  • the density of the polishing layer is preferably 0.3 g / cm 3 or more, more preferably 0.6 g / cm 3 or more, and 0.65 g / cm 3 from the viewpoint of reducing local flatness defects and global steps. More preferably, it is cm 3 or more.
  • the density of the polishing layer from the viewpoint of reducing scratches, preferably 1.1 g / cm 3 or less, more preferably 0.9g / cm 3, 0.85g / cm 3 or less is more preferred.
  • the density of the polishing layer in the present invention is a value measured using a Harvard pycnometer (JIS R-3503 standard) and water as a medium.
  • the polishing pad in the present invention preferably has a cushion layer having a bulk modulus of 40 MPa or more and a tensile modulus of 1 MPa or more and 20 MPa or less from the viewpoint of improving in-plane uniformity.
  • the bulk modulus in the present invention is measured by the following method.
  • a sample piece and water at 23 ° C. are placed in a stainless steel measuring cell having an internal volume of about 40 mL, and a 0.5 mL borosilicate glass pipette (minimum scale 0.005 mL) is attached.
  • a tube made of polyvinyl chloride resin (inner diameter 90 mm ⁇ ⁇ 2000 mm, wall thickness 5 mm) is used as a pressure vessel, and the measurement cell in which the above sample piece is placed is placed therein.
  • V1 is measured.
  • nitrogen is pressurized with the pressure P and the volume change V0 is measured.
  • the volume elastic modulus of the cushion layer is preferably 40 MPa or more.
  • the bulk modulus is preferably 40 MPa or more.
  • the in-plane uniformity of the entire surface of the semiconductor substrate can be improved.
  • An example of a tensile stress measuring device is Tensilon Universal Tester RTM-100 manufactured by Orientec.
  • the measurement conditions of the tensile stress are a dumbbell shape in which the test speed is 5 cm / min, the test piece shape is 5 mm wide, and the sample length is 50 mm.
  • Examples of such a cushion layer include non-foamed elastomers such as natural rubber, nitrile rubber, “neoprene (registered trademark)” rubber, polybutadiene rubber, thermosetting polyurethane rubber, thermoplastic polyurethane rubber, and silicon rubber. However, it is not limited to these.
  • the thickness of the cushion layer is preferably in the range of 0.1 to 2 mm.
  • the thickness of the cushion layer is preferably 0.2 mm or more and more preferably 0.3 mm or more from the viewpoint of in-plane uniformity over the entire surface of the semiconductor substrate.
  • the thickness of the cushion layer is preferably 2 mm or less, more preferably 1.75 mm or less from the viewpoint of local flatness.
  • Examples of means for attaching the polishing layer and the cushion layer include a double-sided tape or an adhesive.
  • the double-sided tape has a general configuration in which an adhesive layer is provided on both sides of a base material such as a nonwoven fabric or a film.
  • the polishing pad of this invention may be provided with the double-sided tape on the surface which adhere
  • a double-sided tape a tape having a general configuration in which an adhesive layer is provided on both surfaces of a substrate as described above can be used.
  • a base material a nonwoven fabric, a film, etc. are mentioned, for example.
  • examples of the composition of the adhesive layer include rubber adhesives and acrylic adhesives. Considering the content of metal ions, an acrylic adhesive is preferable because the metal ion content is low. Also, the cushion sheet and the platen often have different compositions, and the composition of each adhesive layer of the double-sided tape can be made different to optimize the adhesive force to the cushion sheet and the platen.
  • Examples of the material to be polished in the present invention include the surface of an insulating layer or metal wiring formed on a semiconductor wafer.
  • Examples of the insulating layer include an interlayer insulating film of metal wiring, a lower insulating film of metal wiring, and shallow trench isolation used for element isolation.
  • Examples of the metal wiring include aluminum, tungsten, and copper, and structurally include damascene, dual damascene, and plug.
  • a barrier metal such as silicon nitride is also subject to polishing.
  • silicon oxide is currently mainstream, but a low dielectric constant insulating film is also used.
  • the material to be polished can be used for polishing a magnetic head, hard disk, sapphire, etc. in addition to a semiconductor wafer.
  • the polishing method of the present invention is suitably used for forming a flat surface on glass, semiconductors, dielectric / metal composites, integrated circuits and the like.
  • a polishing pad with grooves formed on the polishing layer surface is sliced in the groove depth direction, and the cross section of the grooves is observed with an ultra-deep microscope of Keyence VK-8500 to determine the angle between the polishing surface and the side surface continuous with the polishing surface. It was measured.
  • the polishing pad was circular, the groove closest to the position of 50 mm, 150 mm and 250 mm from the center of the polishing pad was measured, and the average of these three points was taken as the inclination angle.
  • the polishing pad was not circular, the groove closest to the 50 mm, 150 mm, and 250 mm positions was measured from the intersection of the diagonal lines of the sheet toward one end, and the average of these three points was taken as the inclination angle.
  • polishing was performed while detecting the end point under predetermined polishing conditions using a Mirror 3400 manufactured by Applied Materials.
  • the polishing rate (nm / min) excluding the outermost periphery 10 mm of the 8-inch wafer was measured.
  • the value obtained by dividing the standard deviation of the polishing rate by the difference between the maximum value and the minimum value of the polishing rate was defined as in-plane uniformity.
  • the polished wafer is immersed in 0.5 wt% hydrofluoric acid for 10 minutes, washed with water, and then washed with a mixed solution of 1.0 wt% ammonia solution and 1.0 wt% hydrogen peroxide solution. And washed with water and dried. For the cleaned wafer, the number of defects of 0.155 ⁇ m or more was counted using SP-1 manufactured by KLA-Tencor.
  • ⁇ Pad grinding speed> The groove depth before and after polishing was measured by using a depth gauge (Digimatic type) manufactured by Mitutoyo Corporation, and the value obtained by dividing the groove reduction value by the disk usage time during evaluation was taken as the pad grinding speed.
  • the obtained hard foam sheet was ground on both sides to prepare a polishing layer having a thickness of 2 mm.
  • Groove A with a groove width of 3.0 mm, a groove pitch of 15 mm, a cross-sectional shape V-shaped with a tilt angle ⁇ A of 135 degrees, a groove depth of 1.5 mm, a groove width of 1.5 mm, a groove pitch of 15 mm, and a groove depth of 1.5 mm
  • the groove area ratio per unit unit of the groove A was 24.9%, and the area occupation ratio of the groove A per groove area was 73.7%.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

La présente invention se rapporte à un tampon de polissage destiné à réaliser un polissage chimico-mécanique et qui présente au moins une couche de polissage, la surface de polissage de la couche de polissage comprenant une première rainure et une seconde rainure, et les première et seconde rainures présentant des surfaces latérales qui sont continues avec la surface de polissage au niveau des bords transversaux de chacune des rainures. Dans la première rainure, l'angle entre la surface de polissage et la surface latérale continue avec la surface de polissage varie entre 105 et 150° sur au moins un bord transversal de la rainure. Dans la seconde rainure, l'angle entre la surface de polissage et la surface latérale continue avec la surface de polissage varie entre 60 et 105° sur les deux bords transversaux de la rainure.
PCT/JP2012/073538 2011-09-15 2012-09-13 Tampon de polissage Ceased WO2013039181A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US14/344,988 US20140378035A1 (en) 2011-09-15 2012-09-13 Polishing pad
EP12832538.8A EP2757578A4 (fr) 2011-09-15 2012-09-13 Tampon de polissage
SG11201400614RA SG11201400614RA (en) 2011-09-15 2012-09-13 Polishing pad
KR1020147008470A KR20140062095A (ko) 2011-09-15 2012-09-13 연마 패드
CN201280044813.XA CN103782372A (zh) 2011-09-15 2012-09-13 研磨垫

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011-201350 2011-09-15
JP2011201350 2011-09-15

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WO2013039181A1 true WO2013039181A1 (fr) 2013-03-21

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PCT/JP2012/073538 Ceased WO2013039181A1 (fr) 2011-09-15 2012-09-13 Tampon de polissage

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US (1) US20140378035A1 (fr)
EP (1) EP2757578A4 (fr)
JP (1) JPWO2013039181A1 (fr)
KR (1) KR20140062095A (fr)
CN (1) CN103782372A (fr)
SG (1) SG11201400614RA (fr)
TW (1) TW201318766A (fr)
WO (1) WO2013039181A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
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KR20140062095A (ko) 2014-05-22
CN103782372A (zh) 2014-05-07
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TW201318766A (zh) 2013-05-16

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