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WO2013028376A3 - Resistive ram device having improved switching characteristics - Google Patents

Resistive ram device having improved switching characteristics Download PDF

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Publication number
WO2013028376A3
WO2013028376A3 PCT/US2012/050363 US2012050363W WO2013028376A3 WO 2013028376 A3 WO2013028376 A3 WO 2013028376A3 US 2012050363 W US2012050363 W US 2012050363W WO 2013028376 A3 WO2013028376 A3 WO 2013028376A3
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
resistive ram
ram device
switching characteristics
electrolyte layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2012/050363
Other languages
French (fr)
Other versions
WO2013028376A2 (en
Inventor
Mark D. Kellam
Gary B. Bronner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rambus Inc
Original Assignee
Rambus Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rambus Inc filed Critical Rambus Inc
Publication of WO2013028376A2 publication Critical patent/WO2013028376A2/en
Publication of WO2013028376A3 publication Critical patent/WO2013028376A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/82—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8416—Electrodes adapted for supplying ionic species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8418—Electrodes adapted for focusing electric field or current, e.g. tip-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8822—Sulfides, e.g. CuS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)

Abstract

A resistive RAM device, comprising a first electrode, a second electrode, an electrolyte layer located between the first electrode and the second electrode. The first electrode has a central region surrounded by a peripheral region in a plane parallel to the electrolyte layer, and the first electrode comprises a protrusion extending into the electrolyte layer by a greater extent in the central region than in the peripheral region so that the electrolyte layer is thinner in the central region than in the peripheral region.
PCT/US2012/050363 2011-08-24 2012-08-10 Resistive ram device having improved switching characteristics Ceased WO2013028376A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161527089P 2011-08-24 2011-08-24
US61/527,089 2011-08-24

Publications (2)

Publication Number Publication Date
WO2013028376A2 WO2013028376A2 (en) 2013-02-28
WO2013028376A3 true WO2013028376A3 (en) 2013-07-11

Family

ID=47747028

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2012/050363 Ceased WO2013028376A2 (en) 2011-08-24 2012-08-10 Resistive ram device having improved switching characteristics

Country Status (2)

Country Link
TW (1) TW201322375A (en)
WO (1) WO2013028376A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018089937A1 (en) 2016-11-14 2018-05-17 Rambus Inc. Non-volatile memory structure with positioned doping
TWI713029B (en) 2019-11-25 2020-12-11 華邦電子股份有限公司 Resistive random access memory and manufacturing method thereof
JP2022037583A (en) 2020-08-25 2022-03-09 キオクシア株式会社 Semiconductor device and photomask

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060100145A (en) * 2005-03-16 2006-09-20 삼성전자주식회사 Semiconductor memory device using solid electrolyte of three-dimensional structure and manufacturing method thereof
KR20080048757A (en) * 2006-11-29 2008-06-03 삼성전자주식회사 Resistive memory device and manufacturing method thereof
JP2009146943A (en) * 2007-12-11 2009-07-02 Fujitsu Ltd Resistance change element, semiconductor memory device using the same, and manufacturing method thereof
US20110001116A1 (en) * 2009-07-02 2011-01-06 Actel Corporation Back to back resistive random access memory cells
US20110070714A1 (en) * 2005-08-15 2011-03-24 Jun Liu Reproducible resistnance variable insulating memory devices and methods for forming same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060100145A (en) * 2005-03-16 2006-09-20 삼성전자주식회사 Semiconductor memory device using solid electrolyte of three-dimensional structure and manufacturing method thereof
US20110070714A1 (en) * 2005-08-15 2011-03-24 Jun Liu Reproducible resistnance variable insulating memory devices and methods for forming same
KR20080048757A (en) * 2006-11-29 2008-06-03 삼성전자주식회사 Resistive memory device and manufacturing method thereof
JP2009146943A (en) * 2007-12-11 2009-07-02 Fujitsu Ltd Resistance change element, semiconductor memory device using the same, and manufacturing method thereof
US20110001116A1 (en) * 2009-07-02 2011-01-06 Actel Corporation Back to back resistive random access memory cells

Also Published As

Publication number Publication date
TW201322375A (en) 2013-06-01
WO2013028376A2 (en) 2013-02-28

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