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WO2013018978A8 - Composé photo-actif et composition de résine photosensible en comportant - Google Patents

Composé photo-actif et composition de résine photosensible en comportant Download PDF

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Publication number
WO2013018978A8
WO2013018978A8 PCT/KR2012/003766 KR2012003766W WO2013018978A8 WO 2013018978 A8 WO2013018978 A8 WO 2013018978A8 KR 2012003766 W KR2012003766 W KR 2012003766W WO 2013018978 A8 WO2013018978 A8 WO 2013018978A8
Authority
WO
WIPO (PCT)
Prior art keywords
light
resin composition
sensitive resin
photoactive compound
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2012/003766
Other languages
English (en)
Korean (ko)
Other versions
WO2013018978A1 (fr
Inventor
조창호
정원진
라이사 카르바쉬
김성현
최동창
이상철
김한수
허윤희
김선화
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Chem Ltd
Original Assignee
LG Chem Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Chem Ltd filed Critical LG Chem Ltd
Priority to JP2014505096A priority Critical patent/JP5713477B2/ja
Priority to CN201280017607.XA priority patent/CN103492948B/zh
Priority to US14/111,166 priority patent/US8871430B2/en
Publication of WO2013018978A1 publication Critical patent/WO2013018978A1/fr
Publication of WO2013018978A8 publication Critical patent/WO2013018978A8/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D209/00—Heterocyclic compounds containing five-membered rings, condensed with other rings, with one nitrogen atom as the only ring hetero atom
    • C07D209/56—Ring systems containing three or more rings
    • C07D209/80—[b, c]- or [b, d]-condensed
    • C07D209/82—Carbazoles; Hydrogenated carbazoles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Graft Or Block Polymers (AREA)
  • Optical Filters (AREA)
  • Electroluminescent Light Sources (AREA)
  • Indole Compounds (AREA)
  • Polymerisation Methods In General (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

Abstract

La présente invention concerne un composé photo-actif présentant une nouvelle structure et une composition de résine photosensible en comportant. Le composé photo-actif selon la présente invention possède non seulement une excellente sensibilité grâce à une absorption efficace par rapport à une source lumineuse UV due à l'inclusion d'un groupe nitro et de structure de phosphonate, mais également d'excellentes propriétés d'épaisseur résiduelle de film, de résistance mécanique, de résistance thermique, de résistance chimique et de résistance de développement grâce à la solubilité améliorée de la composition de résine photosensible étant donné l'excellente compatibilité de la structure de phosphonate et d'une résine liante. Par conséquent, la composition de résine photosensible selon la présente invention est non seulement avantageuse dans le traitement d'entretoises de colonnes d'écran à cristaux liquides, de couches de finition, de matériaux de passivation et analogues mais est également avantageuse en termes de caractéristiques de traitement à haute température.
PCT/KR2012/003766 2011-08-04 2012-05-14 Composé photo-actif et composition de résine photosensible en comportant Ceased WO2013018978A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2014505096A JP5713477B2 (ja) 2011-08-04 2012-05-14 光活性化合物およびこれを含む感光性樹脂組成物
CN201280017607.XA CN103492948B (zh) 2011-08-04 2012-05-14 光敏化合物及包括其的光敏树脂组合物
US14/111,166 US8871430B2 (en) 2011-08-04 2012-05-14 Photoactive compound and photosensitive resin composition comprising the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0077775 2011-08-04
KR20110077775 2011-08-04

Publications (2)

Publication Number Publication Date
WO2013018978A1 WO2013018978A1 (fr) 2013-02-07
WO2013018978A8 true WO2013018978A8 (fr) 2013-10-24

Family

ID=47629470

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/003766 Ceased WO2013018978A1 (fr) 2011-08-04 2012-05-14 Composé photo-actif et composition de résine photosensible en comportant

Country Status (5)

Country Link
US (1) US8871430B2 (fr)
JP (1) JP5713477B2 (fr)
KR (1) KR101384431B1 (fr)
CN (1) CN103492948B (fr)
WO (1) WO2013018978A1 (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013084283A1 (fr) 2011-12-05 2013-06-13 日立化成株式会社 Procédé de formation d'un film protecteur pour électrodes de panneau tactile, composition de résine photosensible, et élément photosensible
WO2013084282A1 (fr) 2011-12-05 2013-06-13 日立化成株式会社 Procédé de formation d'un motif de film durci de résine, composition de résine photosensible, et élément photosensible
JP2013134263A (ja) * 2011-12-22 2013-07-08 Tokyo Ohka Kogyo Co Ltd ブラックカラムスペーサ用感光性樹脂組成物、ブラックカラムスペーサ、表示装置、及びブラックカラムスペーサの形成方法
KR20140076320A (ko) 2012-12-12 2014-06-20 제일모직주식회사 감광성 수지 조성물 및 이를 이용한 블랙 스페이서
TWI514072B (zh) 2013-08-09 2015-12-21 Cheil Ind Inc 光敏樹脂組合物和使用其的光阻擋層
JP2015069181A (ja) * 2013-09-30 2015-04-13 Jsr株式会社 感放射線性樹脂組成物、硬化膜、その形成方法、及び表示素子
CN107003608B (zh) * 2014-10-24 2020-09-25 飞利斯有限公司 可光图案化组合物及使用其制造晶体管器件的方法
JP5916939B2 (ja) * 2015-12-24 2016-05-11 東京応化工業株式会社 ブラックカラムスペーサの形成方法
KR101768658B1 (ko) * 2016-01-27 2017-08-17 (주)켐이 카바졸 유도체, 이를 포함하는 광중합 개시제 및 포토레지스트 조성물
WO2017169819A1 (fr) * 2016-03-29 2017-10-05 株式会社Adeka Composition de résine photosensible noire
WO2018191237A1 (fr) * 2017-04-12 2018-10-18 Sun Chemical Corporation Compositions de résine de photoréserve stables contenant des composés organosoufrés
CN107474068A (zh) * 2017-09-01 2017-12-15 南京法恩化学有限公司 一种光引发剂咔唑肟酯的制备方法
KR102711242B1 (ko) 2019-06-21 2024-09-26 아이지엠 (안칭) 하이 테크놀로지 디벨롭먼트 코., 엘티디. 신규한 디아로일 카바졸 화합물 및 이의 증감제로서의 응용
CN112111028A (zh) 2019-06-21 2020-12-22 江苏英力科技发展有限公司 一种含有酰基咔唑衍生物和咔唑基肟酯的光引发剂组合物及其在光固化组合物中的应用
CN110981995B (zh) * 2019-12-27 2021-12-07 阜阳欣奕华材料科技有限公司 一种低迁移型光引发剂及其制备方法和应用
CN112691558B (zh) * 2020-12-02 2023-03-28 江西省纳米技术研究院 膜材料的制备方法及系统

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1720245B (zh) * 2002-12-03 2010-05-26 西巴特殊化学品控股有限公司 带有杂芳基的肟酯光引发剂
KR101007440B1 (ko) 2007-07-18 2011-01-12 주식회사 엘지화학 옥심 에스테르를 포함하는 수지상 광활성 화합물 및 이의제조방법
KR101102248B1 (ko) 2008-04-10 2012-01-03 주식회사 엘지화학 광활성 화합물 및 이를 포함하는 감광성 수지 조성물
US8252507B2 (en) 2008-04-10 2012-08-28 Lg Chem, Ltd. Photoactive compound and photosensitive resin composition comprising the same
JP2010015025A (ja) 2008-07-04 2010-01-21 Adeka Corp 特定の光重合開始剤を含有する感光性組成物
KR101077214B1 (ko) * 2009-02-13 2011-10-27 주식회사 엘지화학 광활성 화합물 및 이를 포함하는 감광성 수지 조성물
TWI520940B (zh) * 2010-10-05 2016-02-11 巴地斯顏料化工廠 肟酯

Also Published As

Publication number Publication date
JP2014518549A (ja) 2014-07-31
KR20130016043A (ko) 2013-02-14
CN103492948B (zh) 2016-06-08
US8871430B2 (en) 2014-10-28
JP5713477B2 (ja) 2015-05-07
CN103492948A (zh) 2014-01-01
KR101384431B1 (ko) 2014-04-14
WO2013018978A1 (fr) 2013-02-07
US20140220491A1 (en) 2014-08-07

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