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WO2013002540A3 - Appareil et procédé de croissance de monocristal de carbure de silicium - Google Patents

Appareil et procédé de croissance de monocristal de carbure de silicium Download PDF

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Publication number
WO2013002540A3
WO2013002540A3 PCT/KR2012/005048 KR2012005048W WO2013002540A3 WO 2013002540 A3 WO2013002540 A3 WO 2013002540A3 KR 2012005048 W KR2012005048 W KR 2012005048W WO 2013002540 A3 WO2013002540 A3 WO 2013002540A3
Authority
WO
WIPO (PCT)
Prior art keywords
silicon carbide
single crystal
growing
carbide single
crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2012/005048
Other languages
English (en)
Other versions
WO2013002540A2 (fr
Inventor
Young Shol Kim
Sun Hyuk Bae
Sung Wan Hong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Innovation Co Ltd
Original Assignee
SK Innovation Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SK Innovation Co Ltd filed Critical SK Innovation Co Ltd
Priority to JP2014518794A priority Critical patent/JP5979740B2/ja
Publication of WO2013002540A2 publication Critical patent/WO2013002540A2/fr
Publication of WO2013002540A3 publication Critical patent/WO2013002540A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

L'invention concerne un appareil et un procédé de croissance de monocristal de carbure de silicium par croissance en solution Cet appareil de croissance de monocristal de carbure de silicium comprend : une chambre de réaction se trouvant dans un état de pression prédéterminé; un creuset logé dans la chambre de réaction, contenant des poudres de silicium (Si) ou de carbure de silicium (SiC) ou un mélange de celles-ci, un germe de carbure de silicium sur une partie supérieure de sa face intérieure et permettant la croissance d'un carbure de silicium, et une barre de raccordement de germe s'étendant à partir du germe de carbure de silicium, constituée de matériau de graphite; et un élément chauffant qui chauffe le creuset. Une partie intérieure du creuset présente un outil d'assistance cylindrique comportant une pluralité de pores formés au moins sur un côté de ce dernier et constitué de matériau de graphite.
PCT/KR2012/005048 2011-06-29 2012-06-26 Appareil et procédé de croissance de monocristal de carbure de silicium Ceased WO2013002540A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014518794A JP5979740B2 (ja) 2011-06-29 2012-06-26 炭化ケイ素単結晶成長装置及びその方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020110063656A KR20130007109A (ko) 2011-06-29 2011-06-29 탄화규소 단결정 성장 장치 및 그 방법
KR10-2011-0063656 2011-06-29

Publications (2)

Publication Number Publication Date
WO2013002540A2 WO2013002540A2 (fr) 2013-01-03
WO2013002540A3 true WO2013002540A3 (fr) 2013-04-11

Family

ID=47424654

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/005048 Ceased WO2013002540A2 (fr) 2011-06-29 2012-06-26 Appareil et procédé de croissance de monocristal de carbure de silicium

Country Status (3)

Country Link
JP (1) JP5979740B2 (fr)
KR (1) KR20130007109A (fr)
WO (1) WO2013002540A2 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101636435B1 (ko) * 2014-10-22 2016-07-06 한국세라믹기술원 다공성 흑연도가니 및 이를 이용한 탄화규소 단결정의 용액성장 제조방법
KR101633183B1 (ko) * 2014-10-27 2016-06-24 오씨아이 주식회사 잉곳 제조 장치
JP2017119594A (ja) * 2015-12-28 2017-07-06 東洋炭素株式会社 単結晶ＳｉＣの製造方法及び収容容器
WO2017183747A1 (fr) * 2016-04-21 2017-10-26 한국세라믹기술원 Creuset destiné à une solution de croissance et procédé de croissance d'une solution à l'intérieur d'un creuset
CN105970295B (zh) * 2016-06-24 2018-04-10 山东天岳先进材料科技有限公司 一种液相法生长碳化硅晶体的装置及方法
KR102103884B1 (ko) * 2016-09-30 2020-04-23 주식회사 엘지화학 실리콘카바이드 단결정의 제조 장치 및 제조 방법
KR102088924B1 (ko) * 2018-09-06 2020-03-13 에스케이씨 주식회사 탄화규소 단결정 잉곳 성장 장치
KR102479334B1 (ko) * 2018-10-11 2022-12-19 주식회사 엘지화학 실리콘카바이드 단결정의 제조 장치 및 제조 방법
KR102166640B1 (ko) * 2018-11-09 2020-10-16 일진디스플레이(주) 탄화규소 단결정 성장장치용 지그
CN111676519A (zh) * 2020-08-05 2020-09-18 郑红军 碳化硅晶体熔体生长装置
CN114525587B (zh) * 2022-04-22 2022-07-19 中电化合物半导体有限公司 基于pvt法生长碳化硅单晶的设备及方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006347852A (ja) * 2005-06-20 2006-12-28 Toyota Motor Corp 炭化珪素単結晶の製造方法
JP2008037729A (ja) * 2006-08-10 2008-02-21 Shin Etsu Chem Co Ltd 単結晶炭化珪素及びその製造方法
US20080220232A1 (en) * 2004-12-27 2008-09-11 Masashi Nakabayashi Silicon Carbide Single Crystal, Silicon Carbide Single Crystal Wafer, and Method of Production of Same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5795893A (en) * 1980-12-03 1982-06-14 Fujitsu Ltd Liquid phase epitaxially growing method
JPH02221187A (ja) * 1989-02-20 1990-09-04 Sumitomo Electric Ind Ltd 液相エピタキシャル成長方法
JP3893012B2 (ja) * 1999-05-22 2007-03-14 独立行政法人科学技術振興機構 Ｃｌｂｏ単結晶の育成方法
JP4561000B2 (ja) * 2001-05-31 2010-10-13 住友金属工業株式会社 炭化珪素（ＳｉＣ）単結晶の製造方法
JP5304600B2 (ja) * 2009-11-09 2013-10-02 トヨタ自動車株式会社 ＳｉＣ単結晶の製造装置及び製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080220232A1 (en) * 2004-12-27 2008-09-11 Masashi Nakabayashi Silicon Carbide Single Crystal, Silicon Carbide Single Crystal Wafer, and Method of Production of Same
JP2006347852A (ja) * 2005-06-20 2006-12-28 Toyota Motor Corp 炭化珪素単結晶の製造方法
JP2008037729A (ja) * 2006-08-10 2008-02-21 Shin Etsu Chem Co Ltd 単結晶炭化珪素及びその製造方法

Also Published As

Publication number Publication date
JP2014518195A (ja) 2014-07-28
JP5979740B2 (ja) 2016-08-31
KR20130007109A (ko) 2013-01-18
WO2013002540A2 (fr) 2013-01-03

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