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WO2013002008A1 - Photopile - Google Patents

Photopile Download PDF

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Publication number
WO2013002008A1
WO2013002008A1 PCT/JP2012/064742 JP2012064742W WO2013002008A1 WO 2013002008 A1 WO2013002008 A1 WO 2013002008A1 JP 2012064742 W JP2012064742 W JP 2012064742W WO 2013002008 A1 WO2013002008 A1 WO 2013002008A1
Authority
WO
WIPO (PCT)
Prior art keywords
side electrode
type
oxide layer
type surface
solar cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2012/064742
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English (en)
Japanese (ja)
Inventor
孝裕 羽賀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Publication of WO2013002008A1 publication Critical patent/WO2013002008A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a solar cell.
  • back junction solar cells are known. In the back junction solar cell, it is not necessary to provide an electrode on the light receiving surface. For this reason, in the back junction solar cell, the light receiving efficiency can be increased. Therefore, improved photoelectric conversion efficiency can be realized.
  • Patent Document 1 as a back junction solar cell, a p-side electrode layer and an n-side electrode layer, a transparent electrode disposed between each of the p-side electrode layer and the n-side electrode layer, and the photoelectric conversion unit.
  • a solar cell comprising an electrode layer is described.
  • the transparent electrode layer disposed below the p-side electrode layer and the transparent electrode layer disposed below the n-side electrode layer are spaced apart and electrically insulated.
  • Patent Document 1 describes that the transparent electrode layer is formed of a light-transmitting conductive material such as ITO, tin oxide, or zinc oxide.
  • An object of the present invention is to provide a solar cell having improved photoelectric conversion efficiency.
  • the solar cell according to the present invention includes a photoelectric conversion unit, a transparent oxide layer, a p-side electrode, and an n-side electrode.
  • the photoelectric conversion unit has first and second main surfaces.
  • the first main surface includes a p-type surface and an n-type surface.
  • the transparent oxide layer is continuously provided on the p-type surface and the n-type surface.
  • the sheet resistance of the transparent oxide layer is 1 M ⁇ / ⁇ or more.
  • the p-side electrode is disposed on a portion located on the p-type surface of the transparent oxide layer.
  • the n-side electrode is disposed on a portion located on the n-type surface of the transparent oxide layer.
  • a solar cell having improved photoelectric conversion efficiency can be provided.
  • FIG. 1 is a schematic plan view of the solar cell according to the first embodiment.
  • FIG. 2 is a schematic cross-sectional view taken along line II-II in FIG.
  • FIG. 3 is a schematic cross-sectional view of a solar cell according to the second embodiment.
  • FIG. 1 is a schematic plan view of the solar cell according to the first embodiment.
  • FIG. 2 is a schematic cross-sectional view taken along line II-II in FIG.
  • the solar cell 1 shown in FIGS. 1 and 2 is a back junction solar cell.
  • the solar cell 1 includes a photoelectric conversion unit 10.
  • the photoelectric conversion unit 10 includes first and second main surfaces 10a and 10b. In the solar cell 1, light is received mainly on the second main surface 10b. For this reason, the 2nd main surface 10b may be called a light-receiving surface, and the 1st main surface 10a may be called a back surface.
  • First main surface 10a includes p-type surface 10ap and n-type surface 10an.
  • the photoelectric conversion unit 10 includes a semiconductor substrate 11.
  • the semiconductor substrate 11 has one conductivity type.
  • the semiconductor substrate 11 is n-type will be described, but the semiconductor substrate may be p-type.
  • the semiconductor substrate 11 can be composed of, for example, a crystalline silicon substrate such as a single crystal silicon substrate or a polycrystalline silicon substrate.
  • the semiconductor substrate 11 has first and second main surfaces 11a and 11b. On the second main surface 11b, an i-type semiconductor layer 12i, which is a substantially intrinsic semiconductor layer, an n-type semiconductor layer 13n, and a protective layer 14 are arranged in this order.
  • the i-type semiconductor layer 12i can be made of, for example, substantially intrinsic amorphous silicon containing hydrogen.
  • the n-type semiconductor layer 13n can be made of, for example, n-type amorphous silicon containing hydrogen.
  • the protective layer 14 has a function as a reflection suppression layer in addition to a function as a protective layer.
  • the protective layer 14 can be made of, for example, silicon nitride.
  • a p-type semiconductor layer 15p and an n-type semiconductor layer 16n are disposed on the first main surface 11a.
  • the p-type semiconductor layer 15p and the n-type semiconductor layer 16n are disposed on different portions of the first main surface 11a.
  • the p-type surface 10ap is constituted by a p-type semiconductor layer 15p.
  • the n-type surface 10an is constituted by an n-type semiconductor layer 16n.
  • the p-type semiconductor layer 15p can be made of, for example, p-type amorphous silicon containing hydrogen.
  • the n-type semiconductor layer 16n can be made of, for example, n-type amorphous silicon containing hydrogen.
  • a substantially intrinsic i-type semiconductor layer 15i having a thickness that does not substantially contribute to power generation is disposed between the p-type semiconductor layer 15p and the first main surface 11a. Between the n-type semiconductor layer 16n and the first major surface 11a, a substantially intrinsic i-type semiconductor layer 16i having a thickness that does not substantially contribute to power generation is disposed.
  • the i-type semiconductor layers 15i and 16i can be made of, for example, substantially intrinsic amorphous silicon containing hydrogen.
  • both end portions in the x direction of the semiconductor layers 15i and 15p are arranged on the semiconductor layer 16n. Both end portions of the semiconductor layers 15i and 15p in the x direction and the semiconductor layer 16n are isolated by the insulating layer 17 and electrically insulated.
  • the insulating layer 17 can be made of, for example, silicon nitride or silicon oxide.
  • a transparent oxide layer 18 that transmits at least part of light having a wavelength that contributes to power generation is disposed on the first main surface 10a of the photoelectric conversion unit 10.
  • the transparent oxide layer 18 is continuously provided on the p-type surface 10ap and the n-type surface 10an. Specifically, in the present embodiment, the transparent oxide layer 18 is disposed on substantially the entire first major surface 10a.
  • the sheet resistance of the transparent oxide layer 18 is preferably 1 M ⁇ / ⁇ or more.
  • the transparent oxide layer 18 includes indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), tin oxide (SnO2), indium tungsten oxide (IWO), and zinc oxide (ZnO). And at least one oxide selected from the group consisting of:
  • the thickness of the transparent oxide layer 18 is preferably in the range of 10 nm to 200 nm.
  • a p-side electrode 19p is disposed on the portion of the transparent oxide layer 18 located on the p-type surface 10ap.
  • an n-side electrode 20n is disposed on the portion of the transparent oxide layer 18 located on the n-type surface 10an.
  • the p-side electrode 19p and the n-side electrode 20n are arranged at a distance from each other.
  • the distance D between the p-side electrode 19p and the n-side electrode 20n is preferably at least 100 times the thickness of the transparent oxide layer 18.
  • the surface on the transparent oxide layer 18 side of each of the p-side electrode 19p and the n-side electrode 20n constitutes a light reflecting surface that reflects at least part of light having a wavelength that contributes to power generation of the solar cell 1.
  • Each of the p-side electrode 19p and the n-side electrode 20n is made of, for example, a metal such as Ag or Cu or an alloy containing at least one of these metals.
  • Each of the p-side electrode 19p and the n-side electrode 20n may be constituted by a plating film or may be constituted by a conductive paste layer.
  • the transparent electrode layer disposed below the p-side electrode and the transparent electrode layer disposed below the n-side electrode are arranged at an interval. And is electrically insulated.
  • the transparent electrode layer is made of a material having a low electric resistance.
  • the concentration of the carrier contained in the oxide constituting the transparent electrode layer is increased, the light absorption rate of the transparent electrode layer is increased. Therefore, the amount of light that is reflected again to the photoelectric conversion unit side by the electrode and re-enters the photoelectric conversion unit with respect to the amount of light transmitted through the photoelectric conversion unit is reduced.
  • a transparent electrode layer is not provided between the electrodes, light emitted from a portion located between the electrodes of the photoelectric conversion unit is not reflected to the photoelectric conversion unit side by the transparent electrode layer. Therefore, the light utilization efficiency is lowered.
  • the transparent oxide layer 18 is continuously provided on the p-type surface and the n-type surface.
  • the sheet resistance of the transparent oxide layer 18 is as high as 1 M ⁇ / ⁇ or more. For this reason, the light absorption rate of the transparent oxide layer 18 is low. Therefore, it is possible to increase the amount of light that is reflected again to the photoelectric conversion unit 10 by the electrodes 19p and 20n and reenters the photoelectric conversion unit 10 with respect to the amount of light transmitted through the photoelectric conversion unit 10. Further, a part of the light emitted from the portion located between the p-side electrode 19p and the n-side electrode 20n of the photoelectric conversion unit 10 is reflected by the transparent oxide layer 18 to the photoelectric conversion unit 10 side. Therefore, the utilization efficiency of the light radiate
  • the transparent oxide layer 18 Since the transparent oxide layer 18 has a high sheet resistance as described above, holes are collected by the n-side electrode 20n via the transparent oxide layer 18, and electrons are collected by the p-side electrode 19p. As a result, the photoelectric conversion efficiency is not substantially lowered.
  • the thickness of the transparent oxide layer 18 is smaller than the distance D between the p-side electrode 19p and the n-side electrode 20n, even if the transparent oxide layer 18 is provided, the p-type surface 10ap The electrical resistance between the p-side electrode 19p and the electrical resistance between the n-type surface 10an and the n-side electrode 20n do not increase so much.
  • the thickness of the transparent oxide layer 18 is preferably in the range of 10 nm to 200 nm. If the thickness of the transparent oxide layer 18 is too thick, the electrical resistance between the p-type surface 10ap and the p-side electrode 19p and the electrical resistance between the n-type surface 10an and the n-side electrode 20n may become too large. . On the other hand, if the thickness of the transparent oxide layer 18 is too thin, pinholes may be generated in the transparent oxide layer 18.
  • the distance D between the p-side electrode 19p and the n-side electrode 20n is preferably 100 times or more the thickness of the transparent oxide layer 18. In this case, it can suppress more effectively that a hole is collected by the n side electrode 20n via the transparent oxide layer 18, or an electron is collected by the p side electrode 19p. However, if the distance D between the p-side electrode 19p and the n-side electrode 20n is too large with respect to the thickness of the transparent oxide layer 18, the resistance of the p-side electrode 19p and the n-side electrode 20n increases, Photoelectric conversion efficiency may decrease.
  • the content of tin is preferably about 1% by mass to 10% by mass.
  • the content of tin is preferably about 1% by mass to 10% by mass.
  • the transparent oxide layer 18 is made of AZO, the aluminum content is preferably about 1% by mass to 10% by mass.
  • the adhesion between the photoelectric conversion unit 10 and the electrodes 19p and 20n can be enhanced. Therefore, peeling of the electrodes 19p and 20n can be suppressed.
  • FIG. 3 is a schematic cross-sectional view of a solar cell according to the second embodiment.
  • the photoelectric conversion unit 10 includes the semiconductor substrate 11 and the semiconductor layers 15p and 16n has been described.
  • the present invention is not limited to this configuration.
  • the photoelectric conversion unit 10 is provided with a p-type dopant diffusion region 11p constituting the p-type surface 10ap and an n-type dopant diffusion region 11n constituting the n-type surface 10an.
  • the semiconductor substrate 11 may be included.

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  • Photovoltaic Devices (AREA)

Abstract

La présente invention concerne une photopile présentant une efficacité de conversion photoélectrique améliorée. Une photopile (1) est pourvue d'une partie de conversion photoélectrique (10), d'une couche d'oxyde transparente (18), d'une électrode côté p (19p) et d'une électrode côté n (20n). La partie de conversion photoélectrique (10) présente des première et seconde surfaces principales (10a, 10b). La première surface principale (10a) comprend une surface de type p (10ap) et une surface de type n (10an). La couche d'oxyde transparente (18) est disposée en continu sur la surface de type p (10ap) et la surface de type n (10an). La résistance à couche de la couche d'oxyde transparente (18) est supérieure ou égale à 1 MΩ/□. L'électrode côté p (19p) est disposée sur une partie de la couche d'oxyde transparente (18), ladite partie étant positionnée au-dessus de la surface de type p (10ap). L'électrode côté n (20n) est disposée sur une partie de la couche d'oxyde transparente (18), ladite partie étant positionnée au-dessus de la surface de type n (10an).
PCT/JP2012/064742 2011-06-29 2012-06-08 Photopile Ceased WO2013002008A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011143939 2011-06-29
JP2011-143939 2011-06-29

Publications (1)

Publication Number Publication Date
WO2013002008A1 true WO2013002008A1 (fr) 2013-01-03

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ID=47423908

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2012/064742 Ceased WO2013002008A1 (fr) 2011-06-29 2012-06-08 Photopile

Country Status (1)

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WO (1) WO2013002008A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150248489A1 (en) * 2014-02-28 2015-09-03 Microsoft Corporation Search and navigation via navigational queries across information sources
CN105940503A (zh) * 2013-12-02 2016-09-14 索莱克赛尔公司 用于背接触背结太阳能电池的钝化触点

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009152222A (ja) * 2006-10-27 2009-07-09 Kyocera Corp 太陽電池素子の製造方法
WO2009096539A1 (fr) * 2008-01-30 2009-08-06 Kyocera Corporation Élément de batterie solaire et procédé de fabrication d'élément de batterie solaire
JP2009200267A (ja) * 2008-02-21 2009-09-03 Sanyo Electric Co Ltd 太陽電池
JP2010199416A (ja) * 2009-02-26 2010-09-09 Sanyo Electric Co Ltd 太陽電池の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009152222A (ja) * 2006-10-27 2009-07-09 Kyocera Corp 太陽電池素子の製造方法
WO2009096539A1 (fr) * 2008-01-30 2009-08-06 Kyocera Corporation Élément de batterie solaire et procédé de fabrication d'élément de batterie solaire
JP2009200267A (ja) * 2008-02-21 2009-09-03 Sanyo Electric Co Ltd 太陽電池
JP2010199416A (ja) * 2009-02-26 2010-09-09 Sanyo Electric Co Ltd 太陽電池の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105940503A (zh) * 2013-12-02 2016-09-14 索莱克赛尔公司 用于背接触背结太阳能电池的钝化触点
US20150248489A1 (en) * 2014-02-28 2015-09-03 Microsoft Corporation Search and navigation via navigational queries across information sources
US11068550B2 (en) * 2014-02-28 2021-07-20 Microsoft Technology Licensing, Llc Search and navigation via navigational queries across information sources

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