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WO2013066669A3 - Structures renfermant des encres à nanoparticules de silicium, matériaux de silicium densifié issus de dépôts de silicium en nanoparticules et procédés correspondants - Google Patents

Structures renfermant des encres à nanoparticules de silicium, matériaux de silicium densifié issus de dépôts de silicium en nanoparticules et procédés correspondants Download PDF

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Publication number
WO2013066669A3
WO2013066669A3 PCT/US2012/061456 US2012061456W WO2013066669A3 WO 2013066669 A3 WO2013066669 A3 WO 2013066669A3 US 2012061456 W US2012061456 W US 2012061456W WO 2013066669 A3 WO2013066669 A3 WO 2013066669A3
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WIPO (PCT)
Prior art keywords
silicon
nanoparticle
materials
pellets
densified
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Ceased
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PCT/US2012/061456
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English (en)
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WO2013066669A2 (fr
Inventor
Guojun Liu
Shivkumar Chiruvolu
Weidong Li
Uma Srinivasan
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Nanogram Corp
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Nanogram Corp
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Priority to PH1/2014/500955A priority Critical patent/PH12014500955A1/en
Priority to EP12846610.9A priority patent/EP2774174A4/fr
Priority to JP2014539982A priority patent/JP2015505791A/ja
Priority to KR20147014613A priority patent/KR20150000466A/ko
Publication of WO2013066669A2 publication Critical patent/WO2013066669A2/fr
Publication of WO2013066669A3 publication Critical patent/WO2013066669A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02601—Nanoparticles
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
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  • Engineering & Computer Science (AREA)
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  • General Physics & Mathematics (AREA)
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  • Nanotechnology (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)
  • Silicon Compounds (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Encres à nanoparticules de silicium fournissant une base pour la formation de matériaux souhaitables. Spécifiquement, des composites ont été formés en couches minces comprenant des nanoparticules de silicium incorporées dans une matrice de silicium amorphe, qui peut être formée à des températures relativement basses. Le matériau composite peut être chauffé pour former un matériau nanocristallin possédant des cristaux qui sont de forme non linéaire. Le matériau nanocristallin peut avoir des propriétés électroconductrices souhaitables, et les matériaux peuvent être formés avec un niveau de dopant élevé. De plus, des granules de silicium nanocristallin peuvent être formées à partir de nanoparticules de silicium déposées depuis une encre dans laquelle les granules peuvent être relativement denses bien que moins denses que le silicium en vrac. Les granules peuvent être formées à partir de l'application de pression et de chaleur sur une couche à nanoparticules de silicium.
PCT/US2012/061456 2011-11-01 2012-10-23 Structures renfermant des encres à nanoparticules de silicium, matériaux de silicium densifié issus de dépôts de silicium en nanoparticules et procédés correspondants Ceased WO2013066669A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
PH1/2014/500955A PH12014500955A1 (en) 2011-11-01 2012-10-23 Structures incorporating silicon nanoparticle inks, densified silicon materials from nanoparticle silicon deposits and corresponding methods
EP12846610.9A EP2774174A4 (fr) 2011-11-01 2012-10-23 Structures renfermant des encres à nanoparticules de silicium, matériaux de silicium densifié issus de dépôts de silicium en nanoparticules et procédés correspondants
JP2014539982A JP2015505791A (ja) 2011-11-01 2012-10-23 シリコンナノ粒子インクを内蔵する構造体、ナノ粒子シリコン堆積物から形成される高密度化シリコン材料、及び相応する方法
KR20147014613A KR20150000466A (ko) 2011-11-01 2012-10-23 실리콘 나노입자 잉크를 포함하는 구조체, 나노입자 실리콘 데파짓으로부터 얻어진 조밀화된 실리콘 물질 및 이들의 제조방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/286,888 US20130105806A1 (en) 2011-11-01 2011-11-01 Structures incorporating silicon nanoparticle inks, densified silicon materials from nanoparticle silicon deposits and corresponding methods
US13/286,888 2011-11-01

Publications (2)

Publication Number Publication Date
WO2013066669A2 WO2013066669A2 (fr) 2013-05-10
WO2013066669A3 true WO2013066669A3 (fr) 2013-08-01

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PCT/US2012/061456 Ceased WO2013066669A2 (fr) 2011-11-01 2012-10-23 Structures renfermant des encres à nanoparticules de silicium, matériaux de silicium densifié issus de dépôts de silicium en nanoparticules et procédés correspondants

Country Status (7)

Country Link
US (2) US20130105806A1 (fr)
EP (1) EP2774174A4 (fr)
JP (1) JP2015505791A (fr)
KR (1) KR20150000466A (fr)
PH (1) PH12014500955A1 (fr)
TW (1) TW201334197A (fr)
WO (1) WO2013066669A2 (fr)

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KR20220106156A (ko) 2019-11-27 2022-07-28 코닝 인코포레이티드 반도체 소자 제조용 유리 웨이퍼
CN111053298B (zh) * 2019-12-20 2022-03-15 深圳麦克韦尔科技有限公司 柔性发热体及其制造方法和柔性发热组件及气溶胶产生器
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US20090071539A1 (en) * 2007-09-18 2009-03-19 Yong Woo Choi Solar cell manufactured using amorphous and nanocrystalline silicon composite thin film, and process for manufacturing the same
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KR20110057844A (ko) * 2009-11-25 2011-06-01 주식회사 티지솔라 미세 입자가 형성된 적층형 태양전지

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EP2774174A4 (fr) 2015-07-29
US20130105806A1 (en) 2013-05-02
TW201334197A (zh) 2013-08-16
US20140151706A1 (en) 2014-06-05
WO2013066669A2 (fr) 2013-05-10
KR20150000466A (ko) 2015-01-02
JP2015505791A (ja) 2015-02-26
PH12014500955A1 (en) 2014-06-30

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