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WO2013065649A1 - Élément luminescent organique - Google Patents

Élément luminescent organique Download PDF

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Publication number
WO2013065649A1
WO2013065649A1 PCT/JP2012/077919 JP2012077919W WO2013065649A1 WO 2013065649 A1 WO2013065649 A1 WO 2013065649A1 JP 2012077919 W JP2012077919 W JP 2012077919W WO 2013065649 A1 WO2013065649 A1 WO 2013065649A1
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Prior art keywords
substrate
layer
light emitting
organic
electrode
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English (en)
Japanese (ja)
Inventor
礼隆 遠藤
悦昌 藤田
充浩 向殿
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Sharp Corp
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Sharp Corp
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/17—Passive-matrix OLED displays
    • H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/877—Arrangements for extracting light from the devices comprising scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission

Definitions

  • the present invention relates to an organic light emitting device.
  • This application claims priority based on Japanese Patent Application No. 2011-238999 filed in Japan on October 31, 2011, the contents of which are incorporated herein by reference.
  • OLED Organic Light Emitting Diode
  • OLEDs still have various problems, and in particular, there are problems of manufacturing cost and power consumption.
  • One reason for the increase in manufacturing cost is the separate application of red, green, and blue light emitting elements.
  • the emission color of white, ultraviolet light or blue OLED can be changed to red, green or blue emission color by the wavelength conversion layer using a color filter or phosphor. Can do. In this manner, the manufacturing cost can be reduced by eliminating the need to separate the light emitting portions.
  • a method for manufacturing such a light-emitting element for example, an organic EL element and a substrate in which a wavelength conversion layer is formed on a transparent substrate are bonded to each other, thereby changing a luminescent color and manufacturing a low-cost light-emitting device.
  • ITO indium oxide
  • the efficiency of extracting light to the outside remains only about 20 to 30%, and the remaining 70 to 80% of light is emitted from the end face of the substrate or extinguished by the cathode, and the light extraction efficiency is greatly reduced. There was a problem to do.
  • a light emitting device including a substrate and a pixel electrode provided on the substrate, on the side surface of the partition wall that is patterned to partition the pixel electrode on the substrate.
  • the thing provided with the reflection layer is known (for example, refer patent document 2).
  • the light emitting functional layer provided on the side surface of the partition wall is thin, there is a problem that a short circuit between the pixel electrode and the counter electrode, or the light emitting functional layer on the side surface of the partition wall is energized.
  • an insulating layer needs to be inserted between the pixel electrode and the counter electrode, which increases the number of manufacturing processes.
  • JP 2004-227811 A JP 2010-9793 A Japanese Patent Laid-Open No. 11-329726
  • This invention is made
  • the organic light-emitting device of the present invention is an organic light-emitting device comprising a first substrate having at least an electrode, a light-emitting layer, and a light-transmissive electrode in this order, and a second substrate composed of a transparent substrate.
  • a plurality of edge covers which cover at least a part of the electrode and are disposed on the side surface of the light emitting layer, have an insulating property, and have a light reflecting property or a light scattering property, and are formed at intervals.
  • a plurality of partition walls having light reflectivity or light scattering properties and spaced apart are provided.
  • a color filter or a wavelength conversion layer may be formed on a surface of the second substrate facing the first substrate.
  • the interval between the edge covers on the first substrate may be larger than the interval between the partitions on the second substrate.
  • the side wall of the partition that faces the color filter or the wavelength conversion layer among the side surfaces along the stacking direction of the light-emitting layer has light reflectivity or light scattering property. Also good.
  • the partition wall may have insulating properties on the side surface along the stacking direction of the light emitting layer.
  • a black partition may be provided so as to surround the opening on the second substrate.
  • a low refractive index layer may be provided on the color filter provided on the second substrate.
  • a wavelength conversion layer may be provided on the low refractive index layer.
  • the substrate may be heat-treated at a temperature at which water evaporates.
  • a third substrate made of a transparent substrate may be inserted and bonded between the first substrate and the second substrate.
  • an organic light emitting device with low power consumption, excellent luminous efficiency, and low manufacturing cost.
  • FIG. 1B is a schematic cross-sectional view taken along the line AA of FIG. 1A showing the first embodiment of the organic light emitting device.
  • FIG. It is the schematic sectional drawing to which a part of FIG. 1 was expanded.
  • It is a schematic sectional drawing which shows 2nd embodiment of an organic light emitting element.
  • It is a schematic sectional drawing which shows the manufacturing method of 2nd embodiment of an organic light emitting element.
  • It is a schematic sectional drawing which shows 3rd embodiment of an organic light emitting element.
  • FIG. 5 is an external view showing a lighting device that is an application example of the first to third embodiments of the organic light emitting device.
  • FIG. 5 is an external view showing a ceiling light which is an application example of the first to third embodiments of the organic light emitting device.
  • FIG. 5 is an external view showing a lighting stand that is an application example of the first to third embodiments of the organic light emitting device.
  • FIG. 5 is an external view showing a mobile phone as an application example of the first to third embodiments of the organic light emitting device.
  • FIG. 5 is an external view showing a thin television that is an application example of the first to third embodiments of the organic light emitting device.
  • FIG. 5 is an external view showing a portable game machine that is an application example of the first to third embodiments of the organic light emitting device.
  • FIG. 6 is an external view showing a notebook personal computer that is one application example of the first to third embodiments of the organic light emitting device.
  • FIG. 1A and 1B are schematic views showing a first embodiment of an organic light-emitting device according to the present invention.
  • FIG. 1A is a plan view
  • FIG. 1B is a cross-sectional view taken along line AA in FIG. 1A.
  • FIG. 2 is an enlarged schematic cross-sectional view of a part of FIG. 1B.
  • the organic light emitting element 10 includes a first substrate 11 having a TFT (thin film transistor) circuit (not shown), and an organic electroluminescence element (hereinafter referred to as “organic EL element”) provided on one surface 11a of the first substrate 11.
  • TFT thin film transistor
  • a wavelength conversion layer or a color filter (hereinafter collectively referred to as a “color conversion layer”) 15 is provided on a surface (hereinafter referred to as “one surface”) 14 a that is disposed opposite to the organic EL element 12.
  • the second substrate (sealing substrate) 14 and a partition wall 16 provided on one surface 14a of the second substrate 14, surrounding the side surface of the color conversion layer 15, and partitioning the pixels.
  • the edge cover 13 and the partition wall 16 are abutted, joined, and integrated.
  • the configuration of the edge cover 13 includes a configuration in which the side surface 13a facing the organic layer 18 among the side surfaces along the stacking direction of the organic EL elements 12 has light scattering properties.
  • the partition 16 at least one part of the side surface along the lamination direction of the organic EL element 12 has light-scattering property.
  • the configuration of the partition wall 16 include a configuration in which the side surface 16 a facing the color conversion layer 15 among the side surfaces along the stacking direction of the organic EL element 12 has light scattering properties.
  • the edge cover 13 and the partition wall 16 have light scattering properties
  • the edge cover 13 itself the configuration in which the partition wall 16 itself is formed of a material containing resin and light scattering particles, or the side surface 13 of the edge cover 13, the partition wall
  • each structural member which comprises the organic light emitting element 10 and its formation method are demonstrated concretely, this embodiment is not limited to these structural members and a formation method.
  • the color conversion layer 15 is composed of a wavelength conversion layer or a color filter, and is provided on one surface 14 a of the second substrate 14. That is, the color conversion layer 15 is provided on the external light extraction surface (light emission surface) of the second substrate 14.
  • the phosphor of the wavelength conversion layer absorbs excitation light from light emitting elements such as an ultraviolet light emitting organic EL element and a blue light emitting organic EL element and emits red, green, and blue light, a red phosphor layer, a green phosphor layer, and a blue light. It consists of a phosphor layer.
  • the blue excitation light may be emitted from the blue pixel without providing the blue phosphor layer.
  • blue light emission having directivity is applied as the light emitting element, the blue phosphor layer is not provided, and the excitation light having the directivity is scattered, and isotropic light emission can be extracted to the outside.
  • a light scattering layer may be applied.
  • the red phosphor layer, the green phosphor layer and the blue phosphor layer are composed of a plurality of phosphor layers divided for each dot, and the plurality of red phosphor layers, the green phosphor layer and the blue phosphor layer are different depending on the dots. It is composed of different phosphor materials to emit color light of color.
  • the phosphor materials constituting the plurality of red phosphor layers, green phosphor layers, and blue phosphor layers may have different refractive indexes.
  • the red phosphor layer, the green phosphor layer, and the blue phosphor layer are made of, for example, a thin film having a rectangular shape in plan view.
  • a wavelength selective transmission / reflection member that transmits excitation light and reflects fluorescence emitted from the phosphor layer may be formed on the excitation light incident surface of the phosphor layer.
  • transmitting the excitation light means transmitting at least the light corresponding to the peak wavelength of the excitation light, and reflecting the fluorescence generated in the phosphor layer corresponds to each emission peak wavelength from the phosphor layer. It means at least reflecting light.
  • phosphors emitting cyan and yellow it is preferable to add phosphors emitting cyan and yellow to the pixels as necessary.
  • the color purity of each pixel emitting light is set to cyan and yellow outside the triangle connected by the color purity points of red, green, and blue light emitting pixels on the chromaticity diagram, red.
  • the color reproduction range can be further expanded as compared with a display device that uses pixels that emit three primary colors of green and blue.
  • the phosphor layer may be composed only of the phosphor material exemplified below, and may optionally contain additives, etc., and these materials are contained in a polymer material (binding resin) or an inorganic material. A distributed configuration may be used.
  • a known phosphor material can be used as the phosphor material constituting the phosphor layer. Such phosphor materials are classified into organic phosphor materials and inorganic phosphor materials. Specific examples of these compounds are given below, but the present embodiment is not limited to these materials. .
  • Organic phosphor materials include blue fluorescent dyes, stilbenzene dyes: 1,4-bis (2-methylstyryl) benzene, trans-4,4′-diphenylstilbenzene, coumarin dyes: 7-hydroxy- 4-methylcoumarin and the like can be mentioned.
  • Organic phosphor materials include green fluorescent dyes, coumarin dyes: 2,3,5,6-1H, 4H-tetrahydro-8-trifluoromethylquinolidine (9,9a, 1-gh) coumarin (coumarin). 153), 3- (2′-benzothiazolyl) -7-diethylaminocoumarin (coumarin 6), 3- (2′-benzoimidazolyl) -7-N, N-diethylaminocoumarin (coumarin 7), naphthalimide dye: basic yellow 51, solvent yellow 11, solvent yellow 116, and the like.
  • Organic phosphor materials include red fluorescent dyes, cyanine dyes: 4-dicyanomethylene-2-methyl-6- (p-dimethylaminostyryl) -4H-pyran, pyridine dyes: 1-ethyl-2 -[4- (p-dimethylaminophenyl) -1,3-butadienyl] -pyridinium-perchlorate, rhodamine dyes: rhodamine B, rhodamine 6G, rhodamine 3B, rhodamine 101, rhodamine 110, basic violet 11, sulforhodamine 101 Etc.
  • red fluorescent dyes 4-dicyanomethylene-2-methyl-6- (p-dimethylaminostyryl) -4H-pyran
  • pyridine dyes 1-ethyl-2 -[4- (p-dimethylaminophenyl) -1,3-butadienyl] -pyridinium-perch
  • Inorganic phosphor materials include blue phosphors such as Sr 2 P 2 O 7 : Sn 4+ , Sr 4 Al 14 O 25 : Eu 2+ , BaMgAl 10 O 17 : Eu 2+ , SrGa 2 S 4 : Ce 3+ , CaGa 2 S 4 : Ce 3+ , (Ba, Sr) (Mg, Mn) Al 10 O 17 : Eu 2+ , (Sr, Ca, Ba 2 , 0Mg) 10 (PO 4 ) 6 Cl 2 : Eu 2+ , BaAl 2 SiO 8 : Eu 2+ , Sr 2 P 2 O 7 : Eu 2+ , Sr 5 (PO 4 ) 3 Cl: Eu 2+ , (Sr, Ca, Ba) 5 (PO 4 ) 3 Cl: Eu 2+ , BaMg 2 Al 16 O 27: Eu 2+, (Ba, Ca) 5 (PO 4) 3 Cl: Eu 2+, Ba 3 MgSi 2 O 8: Eu 2+, S
  • the inorganic phosphor material as a green phosphor, (BaMg) Al 16 O 27 : Eu 2+ , Mn 2+ , Sr 4 Al 14 O 25 : Eu 2+ , (SrBa) Al 12 Si 2 O 8 : Eu 2+ , (BaMg) 2 SiO 4 : Eu 2+ , Y 2 SiO 5 : Ce 3+ , Tb 3+ , Sr 2 P 2 O 7 —Sr 2 B 2 O 5 : Eu 2+ , (BaCaMg) 5 (PO 4 ) 3 Cl: Eu 2+ , Sr 2 Si 3 O 8 -2SrCl 2 : Eu 2+ , Zr 2 SiO 4 , MgAl 11 O 19 : Ce 3+ , Tb 3+ , Ba 2 SiO 4 : Eu 2+ , Sr 2 SiO 4 : Eu 2+ , (BaSr) SiO 4 : Eu 2+ and the like can be mentioned.
  • Y 2 O 2 S Eu 3+ , YAlO 3 : Eu 3+ , Ca 2 Y 2 (SiO 4 ) 6 : Eu 3+ , LiY 9 (SiO 4 ) 6 O 2 : Eu 3+ , YVO 4 : Eu 3+ , CaS: Eu 3+ , Gd 2 O 3 : Eu 3+ , Gd 2 O 2 S: Eu 3+ , Y (P, V) O 4 : Eu 3+ , Mg 4 GeO 5.5 F: Mn 4+ , Mg 4 GeO 6 : Mn 4+ , K 5 Eu 2.5 (WO 4 ) 6.25 , Na 5 Eu 2.5 (WO 4 ) 6.25 , K 5 Eu 2.5 (MoO 4 ) 6.25 , Na 5 Eu 2.5 (MoO 4 ) 6.25, and the like.
  • the inorganic phosphor material may be subjected to surface modification treatment as necessary, and as a method thereof, by chemical treatment such as a silane coupling agent or by addition of submicron order fine particles.
  • chemical treatment such as a silane coupling agent or by addition of submicron order fine particles.
  • the thing by physical processing and the thing by those combined use etc. are mentioned.
  • the average particle diameter (d 50 ) is preferably 0.5 to 50 ⁇ m.
  • the average particle size of the inorganic phosphor material is 0.5 ⁇ m or less, the luminous efficiency of the phosphor is drastically lowered. If the average particle diameter of the inorganic phosphor material exceeds 50 ⁇ m, it becomes very difficult to form a flat film, and a gap is formed between the phosphor layer and the organic EL element 12 (organic EL). Light from the element 12 (refractive index: about 1.7) and the inorganic phosphor layer (refractive index: about 2.3) between the element 12 (refractive index: about 2.3) and the light from the organic EL element 12 is efficient. There is a problem that the phosphor layer does not reach the phosphor layer and the luminous efficiency of the phosphor layer is lowered.
  • the phosphor layer is formed by using a phosphor layer forming coating solution obtained by dissolving and dispersing the phosphor material and the resin material in a solvent, using a spin coating method, a dipping method, a doctor blade method, a discharge coating method, a spraying method.
  • Known wet processes such as coating methods such as coating methods, ink jet methods, letterpress printing methods, intaglio printing methods, screen printing methods, printing methods such as micro gravure coating methods, etc.
  • It can be formed by a known dry process such as a vapor deposition method, a molecular beam epitaxy (MBE) method, a sputtering method or an organic vapor deposition (OVPD) method, or a formation method such as a laser transfer method.
  • a vapor deposition method such as a molecular beam epitaxy (MBE) method, a sputtering method or an organic vapor deposition (OVPD) method
  • OVPD organic vapor deposition
  • the phosphor layer can be patterned by a photolithography method using a photosensitive resin as the polymer resin.
  • a photosensitive resin one of photosensitive resins (photo-curable resist material) having a reactive vinyl group such as acrylic acid resin, methacrylic acid resin, polyvinyl cinnamate resin, and hard rubber resin. It is possible to use one kind or a mixture of several kinds.
  • wet process such as ink jet method, relief printing method, intaglio printing method, screen printing method, dispenser method, resistance heating vapor deposition method using shadow mask, electron beam (EB) vapor deposition method, molecular beam epitaxy (MBE) method, It is also possible to directly pattern the phosphor material by a known dry process such as a sputtering method or an organic vapor deposition (OVPD) method, or a laser transfer method.
  • a dry process such as a sputtering method or an organic vapor deposition (OVPD) method, or a laser transfer method.
  • the film thickness of the phosphor layer is usually about 100 nm to 100 ⁇ m, preferably 1 ⁇ m to 100 ⁇ m. If the film thickness is less than 100 nm, it is impossible to sufficiently absorb the light emitted from the light source, so that the light emission efficiency is lowered, and the color purity is deteriorated by mixing the transmitted light of the excitation light with the required color. Problems arise. Further, in order to increase absorption of light emitted from the light source and reduce transmitted light of excitation light to such an extent that the color purity is not adversely affected, the film thickness is preferably 1 ⁇ m or more. On the other hand, when the film thickness exceeds 100 ⁇ m, the light emitted from the light source is already sufficiently absorbed, so that the efficiency is not increased and only the material is consumed, leading to an increase in material cost.
  • the light scattering particles may be composed of an organic material or an inorganic material, but may be composed of an inorganic material. Preferably it is.
  • the organic EL element can be diffused or scattered more isotropically and effectively.
  • an inorganic material it is possible to provide a light scattering layer that is stable to light and heat.
  • the light scattering particles have high transparency.
  • the refractive index ratio with a resin material is contained in the numerical range mentioned above.
  • the main component is an oxide of at least one metal selected from the group consisting of silicon, titanium, zirconium, aluminum, indium, zinc, tin, and antimony. Examples thereof include particles (fine particles).
  • particles (inorganic fine particles) made of an inorganic material for example, silica beads (refractive index: 1.44), alumina beads (refractive index: 1.63), titanium oxide.
  • examples thereof include beads (refractive index: anatase type: 2.50, rutile type: 2.70), zirconia oxide beads (refractive index: 2.05), and zinc oxide beads (refractive index: 2.00).
  • particles (organic fine particles) made of an organic material are used as the light scattering particles, for example, polymethyl methacrylate beads (refractive index: 1.49), acrylic beads (refractive index: 1.50), acrylic- Styrene copolymer beads (refractive index: 1.54), melamine beads (refractive index: 1.57), high refractive index melamine beads (refractive index: 1.65), polycarbonate beads (refractive index: 1.57), Styrene beads (refractive index: 1.60), crosslinked polystyrene beads (refractive index: 1.61), polyvinyl chloride beads (refractive index: 1.60), benzoguanamine-melamine formaldehyde beads (refractive index: 1.68), Examples thereof include silicone beads (refractive index: 1.50).
  • the resin material used by mixing with the above light scattering particles is preferably a translucent resin.
  • the resin material include melamine resin (refractive index: 1.57), nylon (refractive index: 1.53), polystyrene (refractive index: 1.60), melamine beads (refractive index: 1.57).
  • Polycarbonate (refractive index: 1.57), polyvinyl chloride (refractive index: 1.60), polyvinylidene chloride (refractive index: 1.61), polyvinyl acetate (refractive index: 1.46), polyethylene (refractive Ratio: 1.53), polymethyl methacrylate (refractive index: 1.49), poly MBS (refractive index: 1.54), medium density polyethylene (refractive index: 1.53), high density polyethylene (refractive index: 1.54), tetrafluoroethylene (refractive index: 1.35), polytrifluoroethylene chloride (refractive index: 1.42), polytetrafluoroethylene (refractive index: 1.35), and the like.
  • the color filter a known color filter can be used.
  • the color purity of the red pixel, the green pixel, and the blue pixel can be increased, and the color reproduction range of the organic light emitting element 10 can be expanded. Thereby, it becomes possible to prevent the light emission of the organic layer 18 from being reduced by external light, and the reduction in the contrast of the organic light emitting element 10 can be reduced or prevented.
  • the thickness of the color filter is preferably 0.1 ⁇ m to 100 ⁇ m.
  • the organic EL element 12 is roughly composed of a first electrode (pixel electrode) 17, an organic layer (light emitting layer) 18, and a second electrode 19 provided in order on one surface 11 a of the first substrate 11. ing. That is, the organic EL element 12 includes, on one surface 11a of the first substrate 11, a pair of electrodes including the first electrode 17 and the second electrode 19, and an organic layer 18 sandwiched between the pair of electrodes, It has a top emission type structure.
  • the first electrode (pixel electrode) 17 and the second electrode (counter electrode) 19 function as a pair as an anode or a cathode of the organic EL element 12.
  • a microresonator structure may be used for this structure, and the microresonator structure can be realized by adjusting the optical distance between the first electrode 17 and the second electrode 19. .
  • the first electrode 17 is provided on one surface 11a of the first substrate 11, and includes a reflective electrode 17A and a transparent electrode 17B provided on the reflective electrode 17A.
  • the edge portion (end portion) of the first electrode 17 composed of the reflective electrode 17A and the transparent electrode 17B is covered with the edge cover 13.
  • the organic layer 18 is laminated in order from the first electrode 17 side to the second electrode 19 side, the hole injection layer 18A, the hole transport layer 18B, the organic light emitting layer 18C, the hole prevention layer 18D, the electron transport layer. 18E and an electron injection layer 18F.
  • the hole injection layer 18A, the hole transport layer 18B, the organic light emitting layer 18C, the hole prevention layer 18D, the electron transport layer 18E, and the electron injection layer 18F may each have a single layer structure or a multilayer structure. Further, the hole injection layer 18A, the hole transport layer 18B, the organic light emitting layer 18C, the hole prevention layer 18D, the electron transport layer 18E, and the electron injection layer 18F may be either an organic thin film or an inorganic thin film.
  • the hole injection layer 18A efficiently injects holes from the first electrode.
  • the hole transport layer 18B efficiently transports holes to the organic light emitting layer 18C.
  • the electron transport layer 18E efficiently transports electrons to the organic light emitting layer 18C.
  • the electron injection layer 18F efficiently injects electrons from the second electrode.
  • the hole injection layer 18A, the hole transport layer 18B, the electron transport layer 18E, and the electron injection layer 18F correspond to the carrier injection transport layer.
  • the organic EL element 12 is not limited to the above configuration, and the organic layer 18 may be a single layer structure of an organic light emitting layer or a multilayer structure of an organic light emitting layer and a carrier injection / transport layer. Good. Specific examples of the configuration of the organic EL element 12 include the following. (1) Only the organic light emitting layer is provided between the first electrode 17 and the second electrode 19. (2) The hole transport layer and the organic light emitting layer are laminated in this order from the first electrode 17 side to the second electrode 19 side. (3) The organic light emitting layer and the electron transport layer are stacked in this order from the first electrode 17 side to the second electrode 19 side.
  • the hole transport layer, the organic light emitting layer, and the electron transport layer are stacked in this order from the first electrode 17 side toward the second electrode 19 side.
  • the hole injection layer, the hole transport layer, the organic light emitting layer, and the electron transport layer are laminated in this order from the first electrode 17 side to the second electrode 19 side.
  • the hole injection layer, the hole transport layer, the organic light emitting layer, the electron transport layer, and the electron injection layer are stacked in this order from the first electrode 17 side to the second electrode 19 side.
  • the hole injection layer, the hole transport layer, the organic light emitting layer, the hole prevention layer, and the electron transport layer are stacked in this order from the first electrode 17 side toward the second electrode 19 side.
  • a hole injection layer, a hole transport layer, an organic light emitting layer, a hole prevention layer, an electron transport layer, and an electron injection layer were laminated in this order from the first electrode 17 side to the second electrode 19 side. It is a configuration.
  • the hole injection layer, hole transport layer, electron blocking layer, organic light emitting layer, hole blocking layer, electron transport layer and electron injection layer are It is the structure laminated
  • Each of the organic light emitting layer, the hole injection layer, the hole transport layer, the hole prevention layer, the electron prevention layer, the electron transport layer and the electron injection layer may have a single layer structure or a multilayer structure.
  • each of the organic light emitting layer, hole injection layer, hole transport layer, hole prevention layer, electron prevention layer, electron transport layer, and electron injection layer may be either an organic thin film or an inorganic thin film.
  • a substrate in which a plastic substrate is coated with an inorganic material and a substrate in which a metal substrate is coated with an inorganic insulating material are preferable.
  • a substrate coated with such an inorganic material degradation of the organic EL element due to the permeation of moisture, which is the biggest problem when a plastic substrate is used as the substrate of the organic light emitting element (the organic EL element has a particularly small amount) It is known that deterioration also occurs with respect to moisture.).
  • the leak (short) due to the protrusion of the metal substrate which is the biggest problem when the metal substrate is used as the substrate of the organic light emitting element (the organic layer has a very thin film thickness of about 100 to 200 nm. It is known that leakage (short-circuit) occurs in the current in the part significantly).
  • a TFT circuit for active matrix driving it is preferable to use a substrate that does not melt at a temperature of 500 ° C. or lower and does not cause distortion as the first substrate 11.
  • a general metal substrate has a coefficient of thermal expansion different from that of glass, it is difficult to form a TFT circuit on the metal substrate using a conventional production apparatus, but the linear expansion coefficient is 1 ⁇ 10 ⁇ 5.
  • a metal substrate that is an iron-nickel alloy at / ° C or less and matching the linear expansion coefficient to glass a TFT circuit can be formed on the metal substrate at low cost using conventional production equipment. It becomes.
  • the TFT circuit on the glass substrate is transferred to the plastic substrate. It can be transferred and formed. Furthermore, the thickness of the first substrate 11 is preferably 0.1 mm to 3 mm.
  • the TFT circuit formed on the first substrate 11 is formed in advance on one surface 11a of the first substrate 11 before the organic EL element 12 is formed, and functions as switching and driving.
  • a known TFT circuit can be mentioned.
  • a metal-insulator-metal (MIM) diode can be used instead of the TFT circuit.
  • TFT circuits that can be used for active drive organic EL displays and organic light-emitting elements can be formed using known materials, structures, and formation methods.
  • an active layer material of the TFT circuit for example, amorphous silicon (amorphous silicon), polycrystalline silicon (polysilicon), microcrystalline silicon, inorganic semiconductor materials such as cadmium selenide, zinc oxide, indium oxide-gallium oxide, etc. -Oxide semiconductor materials such as zinc oxide, or organic semiconductor materials such as polythiophene derivatives, thiophene oligomers, poly (p-ferylene vinylene) derivatives, naphthacene, and pentacene.
  • Examples of the structure of the TFT circuit include a staggered type, an inverted staggered type, a top gate type, and a coplanar type.
  • a method for forming an active layer constituting a TFT circuit (1) a method of ion doping impurities into amorphous silicon formed by a plasma induced chemical vapor deposition (PECVD) method, and (2) a silane (SiH 4 ) gas is used.
  • PECVD plasma induced chemical vapor deposition
  • SiH 4 silane
  • Amorphous silicon is formed by the low pressure chemical vapor deposition (LPCVD) method used, and the amorphous silicon is crystallized by the solid phase growth method to obtain polysilicon.
  • Si 2 Amorphous silicon is formed by LPCVD using H 6 gas or PECVD using SiH 4 gas, annealed by a laser such as an excimer laser, and the amorphous silicon is crystallized to obtain polysilicon, and then ion doping is performed.
  • Method (low temperature process) (4) LPCVD method How is a polysilicon layer is formed by a PECVD method, a gate insulating film formed by thermal oxidation at 1000 ° C.
  • the gate insulating film of the TFT circuit in this embodiment can be formed using a known material. Examples thereof include SiO 2 formed by PECVD, LPCVD, etc., or SiO 2 obtained by thermally oxidizing a polysilicon film.
  • the signal electrode line, the scanning electrode line, the common electrode line, the first drive electrode, and the second drive electrode of the TFT circuit in this embodiment can be formed using a known material.
  • the material of the signal electrode line, the scan electrode line, the common electrode line, the first drive electrode, and the second drive electrode include tantalum (Ta), aluminum (Al), copper (Cu), and the like.
  • the TFT circuit of the organic light emitting device 10 can be formed with the above-described configuration, but the present embodiment is not limited to these materials, structures, and formation methods.
  • An interlayer insulating film that can be used for an active drive type organic light emitting element can be formed using a known material.
  • a material of the interlayer insulating film for example, inorganic materials such as silicon oxide (SiO 2 ), silicon nitride (SiN or Si 2 N 4 ), tantalum oxide (TaO or Ta 2 O 5 ), acrylic resin, resist material Organic materials, etc. are mentioned.
  • the method for forming the interlayer insulating film include a dry process such as a chemical vapor deposition (CVD) method and a vacuum deposition method, and a wet process such as a spin coating method. If necessary, the interlayer insulating film can be patterned by a photolithography method or the like.
  • the TFT circuit formed on the one surface 11a of the first substrate 11 changes to the characteristics of the TFT circuit.
  • the interlayer insulating film and the light-shielding insulating film can be used in combination.
  • Examples of the material of the light-shielding insulating film include, for example, pigments or dyes such as phthalocyanine and quinaclonone dispersed in a polymer resin such as polyimide, color resists, black matrix materials, and inorganic insulating materials such as Ni x Zn y Fe 2 O 4 Although materials etc. are mentioned, this embodiment is not limited to these materials and a formation method.
  • the organic light emitting element 10 is of an active drive type and a TFT circuit is formed on one surface 11a of the first substrate 11, irregularities are formed on the surface, and the irregularities of the organic EL element 12 (for example, the first substrate 11) 1 electrode 17 defect, organic layer 18 defect, second electrode 19 disconnection, first electrode 17 and second electrode 19 short-circuited, withstand voltage decrease, etc.) may occur.
  • a planarizing film may be provided on the interlayer insulating film.
  • Such a flattening film can be formed using a known material.
  • the material for the planarizing film include inorganic materials such as silicon oxide, silicon nitride, and tantalum oxide, and organic materials such as polyimide, acrylic resin, and resist material.
  • the method for forming the planarization film include a dry process such as a CVD method and a vacuum deposition method, and a wet process such as a spin coating method.
  • the present embodiment is limited to these materials and the formation method. is not.
  • the planarization film may have either a single layer structure or a multilayer structure.
  • the first electrode (pixel electrode) 17 and the second electrode (counter electrode) 19 function as a pair as an anode or a cathode of the organic EL element 12. That is, when the first electrode 17 is an anode, the second electrode 19 is a cathode, and when the first electrode 17 is a cathode, the second electrode 19 is an anode.
  • an electrode material for forming the first electrode 17 and the second electrode 19 a known electrode material can be used.
  • an electrode material for forming the anode gold (Au), platinum (Pt), nickel (Ni) or the like having a work function of 4.5 eV or more is used from the viewpoint of efficiently injecting holes into the organic layer 18.
  • Metals and oxides (ITO) composed of indium (In) and tin (Sn), oxides (SnO 2 ) of tin (Sn), oxides (IZO) composed of indium (In) and zinc (Zn), etc. And transparent electrode materials.
  • metals such as barium (Ba) and aluminum (Al)
  • alloys such as Mg: Ag alloy and Li: Al alloy containing these metals.
  • the first electrode 17 and the second electrode 19 can be formed by using the above materials by a known method such as an EB vapor deposition method, a sputtering method, an ion plating method, a resistance heating vapor deposition method, etc. Embodiments are not limited to these forming methods. Moreover, the electrode formed by the photolithographic method and the laser peeling method can also be patterned as needed, and the electrode patterned directly by combining with a shadow mask can also be formed.
  • the film thickness of the first electrode 17 and the second electrode 19 is preferably 50 nm or more. When the film thickness is less than 50 nm, the wiring resistance is increased, which may increase the drive voltage.
  • the top emission type structure that takes out light emitted from the organic layer 18 from the second substrate 14 side is used.
  • the first electrode 17 it is preferable to use a reflective electrode that is composed of the reflective electrode 17 ⁇ / b> A and the transparent electrode 17 ⁇ / b> B and reflects light and has a high reflectance.
  • a translucent electrode in which light emitted from the organic layer 18 is extracted from the second substrate 14 side, it is preferable to use a translucent electrode as the second electrode 19.
  • Examples of the reflective electrode 17A constituting the first electrode 17 include reflective metal electrodes such as aluminum, silver, gold, aluminum-lithium alloy, aluminum-neodymium alloy, and aluminum-silicon alloy.
  • Examples of the transparent electrode 17B constituting the first electrode 17 include those made of a transparent electrode material such as an oxide made of indium and tin (ITO) and an oxide made of indium tin and tin (IZO). It is done.
  • the 1st electrode 17 is not limited to said structure, You may be comprised only from said reflective metal electrode.
  • the second electrode (semi-transparent electrode) 19 a metal semi-transparent electrode or a combination of a metal semi-transparent electrode and a transparent electrode material can be used.
  • a material for the semitransparent electrode silver is preferable from the viewpoint of reflectance and transmittance.
  • the film thickness of the translucent electrode is preferably 5 to 30 nm. When the film thickness of the translucent electrode is less than 5 nm, the light cannot be sufficiently reflected, and the interference effect cannot be obtained sufficiently. In addition, when the film thickness of the semitransparent electrode exceeds 30 nm, the light transmittance is drastically decreased, and thus the luminance and light emission efficiency of the organic light emitting element 10 may be decreased.
  • the light emission of the organic layer 18 is collected in the front direction (light extraction direction) due to the interference effect between the first electrode 17 and the second electrode 19.
  • the directivity can be given to the light emission of the organic layer 18, the light emission loss escaping to the periphery can be reduced, and the light emission efficiency can be increased.
  • the light emission energy generated in the organic layer 18 can be more efficiently propagated to the opening (light extraction portion) 16b side of the partition wall 16, and the front luminance of the organic light emitting element 10 can be increased.
  • the emission spectrum of the organic layer 18 can be adjusted, and the desired emission peak wavelength and half width can be adjusted. it can.
  • the emission spectrum of the organic layer 18 is changed to a spectrum that can effectively excite the phosphor in the phosphor layer. Can be controlled.
  • a translucent electrode as the second electrode 19, light emitted in the direction opposite to the light extraction direction of the phosphor layer can be reused.
  • the charge injection transport layer is a charge injection layer (hole injection layer 18A, electron injection layer 18F) for the purpose of more efficiently injecting charge (holes, electrons) from the electrode and transporting (injection) to the light emitting layer.
  • a charge transport layer (hole transport layer 18B, electron transport layer 18E), and may be composed of only the charge injection transport material exemplified below, optionally including additives (donor, acceptor, etc.)
  • the structure may be such that these materials are dispersed in a polymer material (binding resin) or an inorganic material.
  • charge injection / transport material known charge injection / transport materials for organic EL elements and organic photoconductors can be used. Such charge injecting and transporting materials are classified into hole injecting and transporting materials and electron injecting and transporting materials. Specific examples of these compounds are given below, but this embodiment is not limited to these materials. .
  • Known materials are used for the hole injection layer 18A and the hole transport layer 18B, and oxides such as vanadium oxide (V 2 O 5 ) and molybdenum oxide (MoO 2 ), and inorganic p-type semiconductor materials; porphyrins Compounds, N, N′-bis (3-methylphenyl) -N, N′-bis (phenyl) -benzidine (TPD), N, N′-di (naphthalen-1-yl) -N, N′-diphenyl Benzidine ( ⁇ -NPD), 4,4 ′, 4 ′′ -tris (carbazol-9-yl) triphenylamine (TCTA), N, N-dicarbazolyl-3,5-benzene (m-CP), 4, 4 ′-(Cyclohexane-1,1-diyl) bis (N, N-di-p-tolylaniline) (TAPC), 2,2′-bis (N, N-diphenylamine) -9,
  • the energy level of the highest occupied molecular orbital (HOMO) is higher than that of the material of the hole transport layer 18B from the viewpoint of more efficiently injecting and transporting holes from the anode. It is preferable to use a low material. Further, as the material of the hole transport layer 18B, it is preferable to use a material having higher hole mobility than the material of the hole injection layer 18A.
  • the hole injection layer 18A and the hole transport layer 18B may optionally contain an additive (donor, acceptor, etc.) and the like.
  • the hole injection layer 18A and the hole transport layer 18B preferably include an acceptor.
  • the acceptor a known acceptor material for organic EL elements can be used. Although these specific compounds are illustrated below, this embodiment is not limited to these materials.
  • the acceptor may be either an inorganic material or an organic material.
  • the inorganic material include gold (Au), platinum (Pt), tungsten (W), iridium (Ir), phosphorus oxychloride (POCl 3 ), hexafluoroarsenate ion (AsF 6 ⁇ ), chlorine (Cl), Examples include bromine (Br), iodine (I), vanadium oxide (V 2 O 5 ), molybdenum oxide (MoO 2 ), and the like.
  • organic materials include 7,7,8,8, -tetracyanoquinodimethane (TCNQ), tetrafluorotetracyanoquinodimethane (TCNQF 4 ), tetracyanoethylene (TCNE), hexacyanobutadiene (HCNB), and dicyclohexane.
  • Compounds having a cyano group such as dicyanobenzoquinone (DDQ); compounds having a nitro group such as trinitrofluorenone (TNF) and dinitrofluorenone (DNF); fluoranil; chloranil; bromanyl and the like.
  • compounds having a cyano group such as TCNQ, TCNQF 4 , TCNE, HCNB, and DDQ are preferable because the effect of increasing the hole concentration is higher.
  • the thickness of the hole injection layer 18A is preferably 1 to 500 nm.
  • the thickness of the hole transport layer 18B is preferably 5 to 500 nm.
  • the organic light emitting layer 18C may be composed only of the organic light emitting material exemplified below, or may be composed of a combination of a light emitting dopant and a host material, and optionally a hole transport material, an electron transport material, Additives (donor, acceptor, etc.) may be included. Moreover, the structure by which these each material was disperse
  • the organic light emitting material a known light emitting material for an organic EL element can be used. Such light-emitting materials are classified into low-molecular light-emitting materials, polymer light-emitting materials, and the like. Specific examples of these compounds are given below, but the present embodiment is not limited to these materials.
  • the organic light emitting material may be classified into a fluorescent material, a phosphorescent material, and the like. From the viewpoint of reducing power consumption, it is preferable to use a phosphorescent material with high emission efficiency.
  • Low molecular light emitting materials used for the organic light emitting layer 18C include aromatic dimethylidene compounds such as 4,4′-bis (2,2′-diphenylvinyl) -biphenyl (DPVBi); 5-methyl Oxadiazole compounds such as -2- [2- [4- (5-methyl-2-benzoxazolyl) phenyl] vinyl] benzoxazole; 3- (4-biphenyl) -4-phenyl-5-t- Triazole derivatives such as butylphenyl-1,2,4-triazole (TAZ); styrylbenzene compounds such as 1,4-bis (2-methylstyryl) benzene; thiopyrazine dioxide derivatives, benzoquinone derivatives, naphthoquinone derivatives, anthraquinone derivatives , Fluorescent organic materials such as diphenoquinone derivatives and fluorenone derivatives; azomethine zinc complexes, (8 Hydroxyquinolina
  • Polymer light emitting materials used for the organic light emitting layer 18C include poly (2-decyloxy-1,4-phenylene) (DO-PPP), poly [2,5-bis- [2- (N, N, N— Triethylammonium) ethoxy] -1,4-phenyl-alt-1,4-phenyllene] dibromide (PPP-NEt 3+ ), poly [2- (2′-ethylhexyloxy) -5-methoxy-1,4- Phenylenevinylene] (MEH-PPV), poly [5-methoxy- (2-propanoxysulfonide) -1,4-phenylenevinylene] (MPS-PPV), poly [2,5-bis- (hexyloxy) -1,4-phenylene- (1-cyanovinylene)] (CN-PPV) and the like; poly (9,9-dioctylfluorene) (PDAF) and the like Risupiro derivatives
  • the organic light emitting material is preferably a low molecular light emitting material, and from the viewpoint of reducing power consumption, it is preferable to use a phosphorescent material having high light emission efficiency.
  • a known dopant for an organic EL element can be used.
  • examples of such a dopant include p-quaterphenyl, 3,5,3,5-tetra-tert-butylsecphenyl, 3,5,3,5-tetra-tert-butyl-p for ultraviolet light-emitting materials.
  • -Fluorescent materials such as quinckphenyl.
  • a fluorescent light emitting material such as a styryl derivative; bis [(4,6-difluorophenyl) -pyridinato-N, C2 ′] picolinate iridium (III) (FIrpic), bis (4 ′, 6 And phosphorescent organic metal complexes such as' -difluorophenylpolydinato) tetrakis (1-pyrazoyl) borate iridium (III) (FIr6).
  • the green light emitting material include phosphorescent organic metal complexes such as tris (2-phenylpyridinate) iridium (Ir (ppy) 3 ).
  • the thickness of the organic light emitting layer 18C is preferably 5 to 500 nm.
  • the hole blocking layer 18D, the electron transport layer 18E, and the electron injection layer 18F known materials are used.
  • a low molecular material an inorganic material that is an n-type semiconductor; 1,3-bis [2- (2,2′-bipyridin-6-yl) -1,3,4-oxadiazo-5-yl] benzene (Bpy-OXD), 1,3-bis (5- (4- (tert-butyl) phenyl) Oxadiazole derivatives such as -1,3,4-oxadiazol-2-yl) benzene (OXD7); 3- (4-biphenyl) -4-phenyl-5-tert-butylphenyl-1,2,4 -Triazole derivatives such as triazole (TAZ); thiopyrazine dioxide derivative; benzoquinone derivative; naphthoquinone derivative; anthraquinone derivative; diphenoquinone derivative; fluorenone derivative;
  • the material of the electron injection layer 18F a material having a higher energy level of the lowest unoccupied molecular orbital (LUMO) than the material of the electron transport layer 18E is used from the viewpoint of more efficiently injecting and transporting electrons from the cathode. Is preferred. Further, as the material of the electron transport layer 18E, it is preferable to use a material having higher electron mobility than the material of the electron injection layer 18F.
  • LUMO lowest unoccupied molecular orbital
  • the electron transport layer 18E and the electron injection layer 18F may optionally contain additives (donors, acceptors, etc.) and the like.
  • the electron transport layer 18E and the electron injection layer 18F preferably include a donor.
  • a donor the well-known donor material for organic EL elements can be used. Although these specific compounds are illustrated below, this embodiment is not limited to these materials.
  • the donor may be either an inorganic material or an organic material.
  • the inorganic material include alkali metals such as lithium, sodium and potassium; alkaline earth metals such as magnesium and calcium; rare earth elements; aluminum (Al); silver (Ag); copper (Cu); It is done.
  • the organic material include a compound having an aromatic tertiary amine skeleton, a condensed polycyclic compound which may have a substituent such as phenanthrene, pyrene, perylene, anthracene, tetracene and pentacene, tetrathiafulvalene (TTF), Examples include dibenzofuran, phenothiazine, and carbazole.
  • Compounds having an aromatic tertiary amine skeleton include anilines; phenylenediamines; N, N, N ′, N′-tetraphenylbenzidine, N, N′-bis- (3-methylphenyl) -N, N Benzidines such as' -bis- (phenyl) -benzidine, N, N'-di (naphthalen-1-yl) -N, N'-diphenyl-benzidine; triphenylamine, 4,4'4 "-tris ( N, N-diphenyl-amino) -triphenylamine, 4,4'4 "-tris (N-3-methylphenyl-N-phenyl-amino) -triphenylamine, 4,4'4" -tris (N Triphenylamines such as-(1-naphthyl) -N-phenyl-amino) -triphenylamine; N, N'-di- (4-methyl-
  • the above-mentioned condensed polycyclic compound “has a substituent” means that one or more hydrogen atoms in the condensed polycyclic compound are substituted with a group (substituent) other than a hydrogen atom.
  • the number of is not particularly limited, and all hydrogen atoms may be substituted with a substituent.
  • the position of the substituent is not particularly limited. Examples of the substituent include an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkenyloxy group having 2 to 10 carbon atoms, and an aryl group having 6 to 15 carbon atoms. An aryloxy group having 6 to 15 carbon atoms, a hydroxyl group, a halogen atom, and the like.
  • the alkyl group may be linear, branched or cyclic.
  • Examples of the linear or branched alkyl group include methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, isobutyl group, sec-butyl group, tert-butyl group, and n-pentyl group.
  • the cyclic alkyl group may be monocyclic or polycyclic, cyclopropyl group, cyclobutyl group, cyclopentyl group, cyclohexyl group, cycloheptyl group, cyclooctyl group, cyclononyl group, cyclodecyl group, norbornyl group, isobornyl group Group, 1-adamantyl group, 2-adamantyl group, tricyclodecyl group and the like.
  • Examples of the alkoxy group include monovalent groups in which an alkyl group is bonded to an oxygen atom.
  • Examples of the alkenyl group include an alkyl group having 2 to 10 carbon atoms in which one single bond (C—C) between carbon atoms is substituted with a double bond (C ⁇ C).
  • Examples of the alkenyloxy group include a monovalent group in which the alkenyl group is bonded to an oxygen atom.
  • the aryl group may be monocyclic or polycyclic, and the number of ring members is not particularly limited, and preferred examples include a phenyl group, a 1-naphthyl group, a 2-naphthyl group, and the like.
  • the aryloxy group includes a monovalent group in which an aryl group is bonded to an oxygen atom.
  • the halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom.
  • a compound having an aromatic tertiary amine skeleton, a condensed polycyclic compound which may have a substituent, and an alkali metal are preferable because the effect of increasing the electron concentration is higher.
  • the thickness of the electron transport layer 18E is preferably 5 to 500 nm.
  • the film thickness of the electron injection layer 18F is preferably 0.1 to 100 nm.
  • a host material can be used also as a hole transport material or an electron transport material, and a hole transport material and an electron transport material can also be used as a host material.
  • a material for forming the edge cover 13 itself and the partition wall 16 itself (hereinafter referred to as “partition wall material”), or a light scattering layer (light scattering film) provided on the side surface 13 a of the edge cover 13 or the side surface 16 a of the partition wall 16.
  • a material for forming (hereinafter referred to as “light scattering film material”), a material containing a resin and light scattering particles is used.
  • the resin include acrylate resin, melamine resin, nylon, polystyrene, melamine beads, polycarbonate, polyvinyl chloride, polyvinylidene chloride, polyvinyl acetate, polyethylene, polymethyl methacrylate, poly MBS, medium density polyethylene, and high density polyethylene. , Tetrafluoroethylene, polytrifluoroethylene chloride, polytetrafluoroethylene and the like.
  • the light scattering particles may be either an inorganic material or an organic material.
  • the main component is an oxide of at least one metal selected from the group consisting of silicon, titanium, zirconium, aluminum, indium, zinc, tin, and antimony. Examples thereof include particles (fine particles).
  • particles (inorganic fine particles) made of an inorganic material for example, silica beads, alumina beads, titanium oxide beads, zirconia oxide beads, zinc oxide beads, barium titanate (BaTiO 3). 3 ) and the like.
  • particles composed of organic materials for example, polymethyl methacrylate beads, acrylic beads, acrylic-styrene copolymer beads, melamine beads, high refractive index melamine beads, examples thereof include polycarbonate beads, styrene beads, crosslinked polystyrene beads, polyvinyl chloride beads, benzoguanamine-melamine formaldehyde beads, and silicone beads.
  • the particle size of the light scattering particles needs to be in the Mie scattering region. It is preferable that it is 500 nm.
  • the partition wall material and the light scattering film material contain a defoaming agent / leveling agent such as a photopolymerization initiator, dipropylene glycol monomethyl ether, 1- (2-methoxy-2-methylethoxy) -2-propanol. Also good.
  • a defoaming agent / leveling agent such as a photopolymerization initiator, dipropylene glycol monomethyl ether, 1- (2-methoxy-2-methylethoxy) -2-propanol. Also good.
  • the partition wall material and the light scattering film material preferably contain a white resist.
  • the white resist include a material containing a carboxyl group-containing resin having no aromatic ring, a photopolymerization initiator, a hydrogenated epoxy compound, a rutile type titanium oxide, and a diluent.
  • the thickness of the light scattering layer is preferably 300 nm to 500 ⁇ m.
  • the edge cover 13 itself and the partition wall 16 itself are formed of the above-described partition wall material, or the light scattering layer is provided on the side surface 13a of the edge cover 13 or the side surface 16a of the partition wall 16 to emit the light from the organic layer 18. It becomes possible to diffuse or scatter light having high directivity more isotropically and effectively.
  • a partition wall or a light-scattering layer stable to light and heat can be formed.
  • the edge cover 13 and the partition 16 are formed with the above materials, the side surface along the lamination direction of the organic EL element 12 has insulation. Therefore, the first electrode 17 and the second electrode 19 are not short-circuited by the edge cover 13.
  • the shape of the edge cover 13 and the partition wall 16 is preferably a tapered shape in which the opening is wider on the incident substrate (first substrate 11) side than on the emission substrate (second substrate 14) side.
  • the structure may be a shape or a strong taper shape, and the present invention is not limited to this.
  • a substrate having high light transmittance is used, and examples thereof include an inorganic material substrate made of glass, quartz, etc., a plastic substrate made of polyethylene terephthalate, polycarbazole, polyimide, or the like.
  • the thickness of the second substrate 14 is preferably 0.1 mm to 3 mm.
  • the edge cover 13 that surrounds the side surface of the organic EL device 12 and partitions the pixel is the side surface 13 a that faces the organic layer 18 among the side surfaces along the stacking direction of the organic EL device 12. Since the partition 16 has a configuration having a scattering property, and the side wall 16a facing the color conversion layer 15 among the side surfaces along the stacking direction of the organic EL element 12 has a configuration having a light scattering property. Light having directivity emitted from the organic layer 18 can be diffused or scattered more isotropically and effectively. Therefore, the organic light emitting device 10 has excellent light extraction efficiency without increasing power consumption.
  • a reflective electrode 17A is formed on one surface 11a of the first substrate 11 by sputtering, vacuum deposition, or the like.
  • a transparent electrode 17B is formed on the reflective electrode 17A by a sputtering method, a vacuum deposition method, or the like.
  • the first electrode 17 is formed by patterning the laminate of the reflective electrode 17A and the transparent electrode 17B into stripes having a predetermined width by photolithography.
  • a white negative resist is prepared by stirring and mixing a white photosensitive composition comprising a resin, light scattering particles, a photopolymerization initiator, and an aromatic solvent.
  • a negative resist is applied to the first electrode 11 formed on the one surface 11a of the first substrate 11 and the one surface 11a of the first substrate 11 by spin coating.
  • a negative resist is applied so as to cover it.
  • the negative resist applied to the first electrode 17 is dried to form a coating film on the first electrode 17.
  • the edge cover 13 is formed by patterning the coating film into a predetermined shape by photolithography.
  • a hole injection layer 18A, a hole transport layer 18B, an organic light emitting layer 18C, a hole prevention layer 18D, an electron transport layer 18E, and an electron injection layer 18F is laminated in this order, and the organic layer 18 is formed.
  • a method for forming each layer constituting the organic layer 18 a known wet process, dry process, laser transfer method, or the like is used.
  • a coating method such as a spin coating method, a dipping method, a doctor blade method, a discharge coating method, a spray coating method, or the like using a liquid in which a material constituting each layer is dissolved or dispersed in a solvent; an inkjet method; Examples thereof include a printing method such as a relief printing method, an intaglio printing method, a screen printing method, and a micro gravure coating method.
  • the liquid used in the above coating method and printing method may contain additives for adjusting the physical properties of the liquid, such as a leveling agent and a viscosity modifier.
  • a resistance heating vapor deposition method an electron beam (EB) vapor deposition method, a molecular beam epitaxy (MBE) method, a sputtering method, an organic vapor phase vapor deposition (OVPD) method, or the like, using the material constituting each of the above layers is used. It is done.
  • EB electron beam
  • MBE molecular beam epitaxy
  • OVPD organic vapor phase vapor deposition
  • a second electrode 19 made of a semitransparent electrode is formed on the organic layer 18 by a sputtering method, a vacuum deposition method, or the like. Next, the second electrode 19 is patterned into a stripe having a predetermined width so as to face the stripe pattern of the first electrode 17 by photolithography.
  • partition wall 16 is formed on the one surface 14 a of the second substrate 14 so as to surround the color conversion layer 15 formed on the one surface 14 a of the second substrate 14.
  • thermosetting adhesive is applied to the surface of the edge cover 13 on the second substrate 14 side, and the edge cover 13 and After the partition 16 is brought into close contact, the adhesive is cured by heating.
  • thermosetting adhesive an airgel adhesive, an acrylic adhesive, a silicon adhesive, or the like is used. Thereby, the organic light emitting element 10 is obtained.
  • the area occupied by the partition wall 16 on the second substrate 14 is preferably wider than the area occupied by the edge cover 13 on the first substrate 11.
  • the edge cover 13 and the partition wall 16 having a predetermined shape are easily formed. can do.
  • the edge cover 13 itself and the partition wall 16 itself are formed using a negative resist in the step of forming the edge cover 13 and the step of forming the partition wall 16 is exemplified. Is not limited to this.
  • a light scattering layer may be formed on the side surface 13a of the edge cover 13 using a negative resist.
  • the partition wall 16 is formed, the side surface of the partition wall 16 is formed.
  • a light scattering layer may be formed in 16a using a negative resist.
  • FIG. 3 is a schematic cross-sectional view showing a second embodiment of the organic light-emitting device according to the present invention.
  • the organic light emitting element 20 includes a first substrate 11 having a TFT (thin film transistor) circuit (not shown), an organic EL element 12 provided on one surface 11 a of the first substrate 11, and an organic EL element 12 facing the organic EL element 12.
  • the second substrate 14 provided with the color filter 21 on one surface 14a, and the surface opposite to the surface in contact with the second substrate 14 of the color filter 21 (hereinafter referred to as "one surface").
  • a black partition is provided on the wavelength conversion layer 23, the edge cover 13 provided on one surface 11 a of the first substrate 11, surrounding the side surface of the organic EL element 12, and partitioning the pixels, and on one surface 14 a of the second substrate 14. 24 through and low Surrounding the side surfaces of the refractive index layer 22 and the wavelength conversion layer 23 and interposing the partition wall 16 between the edge cover 13 provided on the first substrate 11 and the partition wall 16 provided on the second substrate 14.
  • the first substrate 11 and the second substrate 14 are generally composed of an adhesive layer 25 for bonding.
  • the configuration of the edge cover 13 includes a configuration in which the side surface 13a facing the organic layer 18 among the side surfaces along the stacking direction of the organic EL elements 12 has light scattering properties.
  • the partition 16 at least one part of the side surface along the lamination direction of the organic EL element 12 has light-scattering property.
  • the configuration of the partition wall 16 includes a configuration in which the side surface 16 a facing the low refractive index layer 22 and the wavelength conversion layer 23 among the side surfaces along the stacking direction of the organic EL element 12 has light scattering properties. It is done.
  • color filter 21 and the wavelength conversion layer 23 those similar to those in the first embodiment described above are used.
  • the low refractive index layer 22 is a layer provided on one surface 14 a of the second substrate 14 and having a property of reducing the incident angle of light emitted from the organic layer 18 and incident on the second substrate 14.
  • the incident angle of the light incident on the second substrate 14 is reduced, and the light incident on the second substrate 14 is reliably extracted to the outside. Is possible. Thereby, it becomes possible to extract fluorescence from the organic light emitting element 20 to the outside very efficiently.
  • the low refractive index layer 22 is formed of a transparent material having a light refractive index in the range of 1.01 to 1.30. When the refractive index of the low refractive index layer 22 exceeds 1.30, it is difficult to improve the light extraction efficiency from the organic light emitting element 20.
  • the low refractive index layer 22 preferably has a low refractive index, but there is a limit to lowering the refractive index using silica airgel described later, and 1.01 is a practical lower limit.
  • Examples of the material of the low refractive index layer 22 include a fluorine resin having a refractive index of about 1.35 to 1.4, a silicone resin having a refractive index of about 1.4 to 1.5, and a refractive index of about 1.003 to 1.3.
  • Examples thereof include transparent materials such as silica airgel and porous silica having a refractive index of about 1.2 to 1.3.
  • the present embodiment is not limited to these materials.
  • the refractive index of the low refractive index layer 22 is preferably as low as possible. From the viewpoint that pores and voids exist in the low refractive index layer 22, the low refractive index layer 22 is formed of silica airgel, porous silica, or the like. More preferred. Silica airgel is particularly preferred because it has a very low refractive index. Silica aerogel is a wet gel composed of a silica skeleton obtained by hydrolysis and polymerization reaction of alkoxylane, as disclosed in US Pat. The solid compound is produced by drying in the presence of a solvent such as alcohol or carbon dioxide in a supercritical state above the critical point of the solvent.
  • a solvent such as alcohol or carbon dioxide
  • the film thickness of the low refractive index layer 22 is preferably 100 nm to 50 ⁇ m.
  • the film thickness of the low refractive index layer 22 is greater than 50 ⁇ m, in particular, until light incident on the low refractive index layer 22 in an oblique direction from the organic layer 18 reaches the interface between the low refractive index layer 22 and the second substrate 14.
  • the travel distance in the horizontal direction (the direction perpendicular to the thickness direction of the second substrate 14) with respect to the second substrate 14 becomes longer.
  • the light emission area of light extracted from the second substrate 14 to the outside is enlarged relative to the light emission area of the organic layer 18 itself, which is not preferable particularly for a display or the like for high definition.
  • the low refractive index layer 22 is more preferably a thin film.
  • Examples of the black partition wall 24 include those formed of a black negative resist applied to one surface 14a of the second substrate 14 by a spin coating method or the like.
  • the same adhesive as that used for joining the first substrate 11 and the second substrate 14 in the first embodiment described above is used.
  • the edge cover 13 that is provided on one surface 11 a of the first substrate 11, surrounds the side surface of the organic EL device 12, and partitions the pixels is a side surface along the stacking direction of the organic EL device 12.
  • the side surface 13a facing the organic layer 18 has a light scattering property, light having directivity emitted from the organic layer 18 is diffused or scattered more effectively and isotropically. It becomes possible to make it.
  • a partition wall 16 provided on one surface 14 a of the second substrate 14 and surrounding the side surfaces of the low refractive index layer 22 and the wavelength conversion layer 23 and partitioning the pixels is formed on the side surface along the stacking direction of the organic EL elements 12.
  • the organic light-emitting element 20 is a light-emitting element that has excellent light extraction efficiency without increasing power consumption and does not require a new insulating layer.
  • the black partition wall 24 and the color filter 21 are sequentially formed on the second substrate 14.
  • the partition 16 is formed on the black partition 24 formed on the one surface 14 a of the second substrate 14 in the same manner as in the first embodiment described above.
  • the low refractive index layer 22 is formed on the one surface 21a of the color filter 21 formed on the one surface 14a of the second substrate 14.
  • the wavelength conversion layer 23 is formed on the one surface 22a of the low refractive index layer 22 formed on the one surface 14a of the second substrate 14.
  • the black partition 24, the color filter 21, the low refractive index layer 22, the wavelength conversion layer 23, and the partition 16 are formed on one surface 14 a of the second substrate 14.
  • the edge cover 13 and the partition wall 16 having a predetermined shape are easily formed. can do.
  • the edge cover 13 itself and the partition wall 16 itself are formed using a negative resist in the step of forming the edge cover 13 and the step of forming the partition wall 16 is exemplified. Is not limited to this.
  • a light scattering layer may be formed on the side surface 13a of the edge cover 13 using a negative resist.
  • the partition wall 16 is formed, the side surface of the partition wall 16 is formed.
  • a light scattering layer may be formed in 16a using a negative resist.
  • a fitting portion may be provided on each of the joining surfaces of the edge cover and the partition wall, and the fitting portions may be fitted to each other.
  • a fitting projection is provided on the joint surface of the edge cover
  • a fitting recess is provided on the joint surface of the partition wall, and the edge cover and the partition wall are joined by fitting the fitting projection and the fitting recess. May be. Thereby, it can prevent that position shift arises between a 1st board
  • FIG. 5 is a schematic cross-sectional view showing a third embodiment of the organic light-emitting device according to the present invention.
  • the organic light emitting element 30 includes a first substrate 11 having a TFT (thin film transistor) circuit (not shown), an organic EL element 12 provided on one surface 11 a of the first substrate 11, and one of the first substrates 11.
  • TFT thin film transistor
  • An edge cover 13 which is provided on the surface 11a and surrounds the side surface of the organic EL element 12 and partitions the pixels; a second substrate (sealing substrate) 14 which is disposed opposite to the organic EL element 12 via the edge cover 13; Provided on one surface 14 a of the second substrate 14 so as to face the edge cover 13, provided on the one surface 14 a of the second substrate 14, and provided on the one surface 14 a of the second substrate 14 so as to face the organic EL element 12.
  • the third substrate 31 is generally configured.
  • the configuration of the edge cover 13 includes a configuration in which the side surface 13a facing the organic layer 18 among the side surfaces along the stacking direction of the organic EL elements 12 has light scattering properties.
  • the partition 16 at least one part of the side surface along the lamination direction of the organic EL element 12 has light-scattering property.
  • the configuration of the partition wall 16 includes a configuration in which the side surface 16 a facing the third substrate 31 among the side surfaces along the stacking direction of the organic EL elements 12 has light scattering properties.
  • a substrate having high light transmittance is used, and examples thereof include an inorganic material substrate made of glass, quartz, etc., a plastic substrate made of polyethylene terephthalate, polycarbazole, polyimide, or the like.
  • the thickness of the third substrate 31 is preferably 10 ⁇ m to 1 mm.
  • the edge cover 13 provided on the one surface 11a of the first substrate 11 of the organic light emitting element 30 and surrounding the side surface of the organic EL element 12 to partition the pixels is organic among the side surfaces along the stacking direction of the organic EL element 12. Since the side surface 13a facing the layer 18 has a light scattering property, it is possible to diffuse or scatter light having directivity emitted from the organic layer 18 more isotropically and effectively. It becomes.
  • the partition wall 16 provided on one surface 14 a of the second substrate 14, surrounding the side surface of the third substrate 31 and partitioning the pixels is the third substrate 31 among the side surfaces along the stacking direction of the organic EL elements 12.
  • the organic light emitting device 30 is a light emitting device that is excellent in light extraction efficiency without increasing power consumption and does not require a new insulating layer.
  • the partition wall 16 is formed on one surface 14 a of the second substrate 14.
  • thermosetting adhesive As the thermosetting adhesive, an airgel adhesive, an acrylic adhesive, a silicon adhesive, or the like is used.
  • thermosetting adhesive is applied to the surface of the edge cover 13 on the second substrate 14 side, and the edge cover 13 and After the partition 16 is brought into close contact, the adhesive is cured by heating.
  • thermosetting adhesive an airgel adhesive, an acrylic adhesive, a silicon adhesive, or the like is used. Thereby, the organic light emitting element 30 is obtained.
  • the edge cover 13 and the partition wall 16 having a predetermined shape are easily formed. can do.
  • the edge cover 13 itself and the partition wall 16 itself are formed using a negative resist in the step of forming the edge cover 13 and the step of forming the partition wall 16 is exemplified. Is not limited to this.
  • a light scattering layer may be formed on the side surface 13a of the edge cover 13 using a negative resist.
  • the partition wall 16 is formed, the side surface of the partition wall 16 is formed.
  • a light scattering layer may be formed in 16a using a negative resist.
  • a lighting device 40 shown in FIG. 6 is a lighting device including a drive unit 41 that generates current or voltage and a light-emitting unit 42 that emits light by current or voltage from the drive unit 41.
  • the light emitting section 42 is composed of any of the organic light emitting elements of the first to third embodiments described above.
  • the light emission part 42 is the organic light emitting element 20 of the above-mentioned 2nd embodiment
  • this embodiment is not limited to this.
  • the light emission part 42 may be comprised from the organic light emitting element of the above-mentioned 1st or 3rd embodiment.
  • a voltage is applied from the drive unit 41 to the organic layer 18 sandwiched between the first electrode 17 and the second electrode 19, thereby causing the organic light emitting element 20 corresponding to a predetermined pixel to emit light. , Can emit light.
  • the transition metal complex according to the first to third embodiments of the above described organic layer of the organic light emitting device is used.
  • a conventionally known organic EL light emitting material may be contained.
  • the illuminating device 40 of the present embodiment is an illuminating device having excellent luminous efficiency by including, as the light emitting unit 42, the organic light emitting element using the transition metal complex in the first to third embodiments described above.
  • the organic light emitting devices of the first to third embodiments described above can be applied to, for example, the ceiling light (illumination device) 50 shown in FIG.
  • a ceiling light 50 shown in FIG. 7 is a lighting device including a light emitting unit 51, a hanging line 52, and a power cord 53.
  • the light emitting section 51 is composed of any of the organic light emitting elements of the first to third embodiments described above.
  • the ceiling light 50 according to the present embodiment is an illuminating device having excellent luminous efficiency by including the organic light emitting element using the transition metal complex in the first to third embodiments described above as the light emitting unit 51.
  • the organic light emitting devices of the first to third embodiments described above can be applied to, for example, the illumination stand (illumination device) 60 shown in FIG.
  • the illumination stand 60 shown in FIG. 8 is an illumination device that includes a light emitting unit 61, a stand 62, a main switch 63, and a power cord 64.
  • the light emitting unit 61 is composed of any of the organic light emitting elements of the first to third embodiments described above.
  • the illumination stand 60 of the present embodiment is an illumination device having excellent luminous efficiency by including the organic light emitting element using the transition metal complex in the first to third embodiments as the light emitting unit 61.
  • the organic light emitting devices of the first to third embodiments described above can be applied to various electronic devices.
  • electronic devices including the organic light-emitting elements according to the first to third embodiments will be described with reference to FIGS.
  • the organic light emitting devices of the first to third embodiments described above can be applied to, for example, the mobile phone shown in FIG.
  • a cellular phone 70 shown in FIG. 9 includes an audio input unit 71, an audio output unit 72, an antenna 73, an operation switch 74, a display unit 75, a housing 76, and the like.
  • the organic light emitting device of the first to third embodiments described above can be suitably applied as the display unit 75.
  • the organic light emitting devices of the first to third embodiments described above can be applied to, for example, a thin television shown in FIG. 10 includes a display unit 81, a speaker 82, a cabinet 83, a stand 84, and the like.
  • the organic light-emitting elements of the first to third embodiments described above can be suitably applied as the display unit 81.
  • By applying the organic light emitting elements of the first to third embodiments described above to the display unit 81 of the thin television 80 it is possible to display an image with good light emission efficiency.
  • the organic light emitting devices of the first to third embodiments described above can be applied to, for example, the portable game machine shown in FIG.
  • a portable game machine 90 shown in FIG. 11 includes operation buttons 91 and 92, an external connection terminal 93, a display unit 94, a housing 95, and the like.
  • the organic light emitting device of the first to third embodiments described above can be suitably applied as the display unit 94.
  • an image can be displayed with good luminous efficiency.
  • the organic light emitting devices of the first to third embodiments described above can be applied to, for example, a notebook computer shown in FIG.
  • a notebook personal computer 100 illustrated in FIG. 12 includes a display unit 101, a keyboard 102, a touch pad 103, a main switch 104, a camera 105, a recording medium slot 106, a housing 107, and the like.
  • the organic light emitting elements of the first to third embodiments described above can be suitably applied as the display unit 101.
  • the display device described in the above embodiment preferably includes a polarizing plate on the light extraction side.
  • a polarizing plate a combination of a conventional linear polarizing plate and a ⁇ / 4 plate can be used.
  • the polarizing plate By providing such a polarizing plate, external light reflection from the electrodes of the display device or external light reflection on the surface of the substrate or the sealing substrate can be prevented, and the contrast of the display device can be improved. it can.
  • specific descriptions regarding the shape, number, arrangement, material, formation method, and the like of each component of the phosphor substrate, the display device, and the lighting device are not limited to the above-described embodiments, and can be appropriately changed. is there
  • Example 1 Preparation of organic EL substrate
  • a reflective electrode made of silver having a thickness of 100 nm is formed on a 0.7 mm-thick glass substrate by sputtering, and a transparent electrode (IZO) having a thickness of 20 nm is formed on the reflective electrode by sputtering.
  • IZO transparent electrode
  • a first electrode (anode) was formed. Thereafter, the first electrode was patterned into 90 stripes with a width of 2 mm by a conventional photolithography method.
  • Epoxy resin (refractive index: 1.59), acrylic resin (refractive index: 1.49), rutile titanium oxide (refractive index: 2.71, particle size 250 nm), photopolymerization initiator and aromatic solvent
  • the white photosensitive composition consisting of was stirred and mixed to prepare a negative resist of a white partition wall material.
  • a negative resist was applied by a spin coater method. Then, it prebaked at 80 degreeC for 10 minute (s), and formed the coating film with a film thickness of 50 micrometers.
  • the coating film was covered with a mask (pixel pitch 500 ⁇ m, line width 50 ⁇ m) capable of forming a desired image pattern, and then the i-line (300 mJ / cm 2 ) was irradiated to the coating film to be exposed. Subsequently, it developed using the alkali developing solution, and obtained the pixel pattern-like structure in which the white partition was formed. Subsequently, using a hot air circulation drying oven, post-baking was performed at 140 ° C. for 60 minutes to form white partition walls for partitioning pixels. The reflectance of the surface of the white partition wall was measured and found to be 96.5%.
  • the substrate on which the first electrode and the white barrier rib are formed is fixed to the substrate holder in the inline type resistance heating vapor deposition apparatus, and the pressure is reduced to a vacuum of 1 ⁇ 10 ⁇ 4 Pa or less, and the organic layer including the organic light emitting layer is removed.
  • Each constituent layer was formed.
  • the formation method of each layer which comprises an organic EL layer is demonstrated in detail.
  • 1,1-bis-di-4-tolylamino-phenyl-cyclohexane (TAPC) was used as a hole injection material, and a hole injection layer having a thickness of 100 nm was formed by resistance heating vapor deposition.
  • N, N′-di-1-naphthyl-N, N′-diphenyl-1,1′-biphenyl-1,1′-biphenyl-4,4′-diamine is used as the hole transport material. Then, a hole transport layer having a film thickness of 40 nm was formed by resistance heating vapor deposition.
  • This blue organic light-emitting layer comprises 1,4-bis-triphenylsilyl-benzene (UGH-2) (host material) and bis [(4,6-difluorophenyl) -pyridinato-N, C2 ′] picolinate iridium (III) (FIrpic) (blue phosphorescent dopant) was co-deposited at a deposition rate of 1.5 ⁇ / sec and 0.2 ⁇ / sec, respectively.
  • a hole blocking layer (thickness: 10 nm) was formed on the organic light emitting layer using 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP).
  • BCP 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline
  • an electron transport layer (thickness: 30 nm) was formed on the hole blocking layer using tris (8-hydroxyquinoline) aluminum (Alq 3 ).
  • an electron injection layer (thickness: 0.5 nm) was formed on the electron transport layer using lithium fluoride (LiF).
  • a semitransparent electrode was formed as the second electrode.
  • the substrate was fixed in a metal vapor deposition chamber, and the shadow mask for forming the translucent electrode was aligned with the substrate.
  • the shadow mask a mask provided with an opening so that a semi-transparent electrode can be formed in a stripe shape having a width of 2 mm in a direction facing the stripe of the first electrode is used.
  • magnesium and silver are co-deposited on the surface of the electron injection layer by vacuum deposition at a deposition rate of 0.1 ⁇ / sec and 0.9 ⁇ / sec, respectively, thereby forming magnesium silver in a desired pattern ( (Thickness: 1 nm).
  • silver is formed in a desired pattern at a deposition rate of 1 mm / sec (thickness: 19 nm) for the purpose of emphasizing the interference effect and preventing voltage drop due to wiring resistance at the second electrode. )did.
  • a semitransparent electrode was formed by the above treatment.
  • a microcavity effect appears between the first electrode and the second electrode, and the front luminance can be increased. Thereby, the light emission energy from an organic layer can be efficiently propagated to the light extraction part side.
  • substrate with which the organic EL element was formed was obtained by the above process.
  • a 0.7 mm thick glass substrate was washed with water, then subjected to pure water ultrasonic cleaning for 10 minutes, acetone ultrasonic cleaning for 10 minutes, and isopropyl alcohol vapor cleaning for 5 minutes, and dried at 100 ° C. for 1 hour.
  • a black barrier rib material BK resist manufactured by Tokyo Ohka Kogyo Co., Ltd. was applied to one surface of a glass substrate by a spin coater method. Then, it prebaked at 70 degreeC for 15 minutes, and formed the coating film with a film thickness of 1 micrometer.
  • the coating film was covered with a mask (pixel pitch 500 ⁇ m, line width 50 ⁇ m) capable of forming a desired image pattern, and then irradiated with i-line (100 mJ / cm 2 ) for exposure. Subsequently, it developed using the sodium carbonate aqueous solution, and rinsed with the pure water, and obtained the pixel-pattern-like structure in which the black partition was formed.
  • a mask pixel pitch 500 ⁇ m, line width 50 ⁇ m
  • the negative resist of the white partition wall material was applied to one surface of the glass substrate by a spin coater method. Then, it prebaked at 70 degreeC for 15 minutes, and formed the coating film with a film thickness of 30 micrometers.
  • This coating film is covered with a mask (pixel pitch 500 ⁇ m, line width 50 ⁇ m) that can form a desired image pattern in alignment with the black barrier formed in the lower layer, and then i-line (300 mJ / cm 2 ). Irradiated and exposed. Subsequently, it developed using the sodium carbonate aqueous solution, and rinsed with the pure water, and obtained the pixel-pattern-like structure in which the white partition was formed.
  • the organic EL substrate and the light extraction substrate produced as described above were aligned using an alignment marker formed outside the pixel arrangement position.
  • a thermosetting resin was applied in advance to the organic EL substrate and the light extraction substrate. After aligning the organic EL substrate and the light extraction substrate, the two substrates are brought into close contact with each other through the thermosetting resin, and heated at 90 ° C. for 2 hours to cure the thermosetting resin, and the organic EL substrate and the light extraction substrate. Were pasted together. Note that the step of bonding the two substrates was performed in a dry air environment (water content: ⁇ 80 ° C.) in order to prevent the organic layer from being deteriorated by moisture. Thus, the organic light emitting device of Example 1 was produced.
  • Comparative Example 1 A comparative example in which an organic EL substrate produced in the same manner as in Example 1 except that no white partition was formed and a light extraction substrate produced in the same manner as in Example 1 except that no white partition was formed were bonded. 1 organic light-emitting device was produced. With respect to the organic light-emitting device of Comparative Example 1, the external quantum yield (10 mA / cm 2 ) of the light actually extracted outside was measured and found to be 4%. As a result, it was confirmed that the luminous efficiency of Example 1 was 1.56 times higher than that of Comparative Example 1.
  • Example 2 (Formation of phosphor layer) A red phosphor layer and a green phosphor layer were formed in the region partitioned by the white partition of the light extraction substrate produced in the same manner as in Example 1.
  • a red phosphor layer first, 30 g of a 10 wt% polyvinyl alcohol aqueous solution was added to 20 g of red phosphor CaS: Eu having an average particle diameter of 4 ⁇ m, and stirred with a disperser to prepare a red phosphor forming coating solution.
  • a red phosphor forming coating solution was applied in a pattern to the area partitioned by the black matrix by a dispenser technique.
  • the green phosphor layer In the formation of the green phosphor layer, first, 30 g of a 10 wt% polyvinyl alcohol aqueous solution is added to 20 g of the green phosphor Ga 2 SrS 4 : Eu having an average particle diameter of 4 ⁇ m, and stirred with a disperser to form a green phosphor forming coating. A liquid was prepared. Next, a green phosphor forming coating solution was applied in a pattern to the region partitioned by the black matrix by a dispenser technique. Subsequently, it was dried by heating in a vacuum oven (200 ° C., 10 mmHg) for 4 hours, and a green phosphor layer having a refractive index of 1.6 was patterned with a film thickness of 25 ⁇ m.
  • Comparative Example 2 A comparative example in which an organic EL substrate produced in the same manner as in Example 1 except that no white partition was formed and a light extraction substrate produced in the same manner as in Example 2 except that no white partition was formed were bonded. 2 organic light-emitting devices were produced. For the organic light-emitting device of Comparative Example 2, the external quantum yield (10 mA / cm 2 ) of light actually extracted to the outside was measured. When red phosphor was used, 3%, green phosphor was used. When it was, it was 6.0%. As a result, it was confirmed that the luminous efficiency of Example 2 was 1.56 times higher than that of Comparative Example 2.
  • Example 3 (Formation of color filters and phosphor layers) Color filters were each formed with a thickness of 1 ⁇ m by an inkjet method in regions partitioned by white partition walls of a light extraction substrate produced in the same manner as in Example 1. Next, a phosphor layer was formed on the color filter in the same manner as in Example 2.
  • Comparative Example 3 A comparative example in which an organic EL substrate produced in the same manner as in Example 1 except that no white partition was formed and a light extraction substrate produced in the same manner as in Example 3 except that no white partition was formed were bonded. 3 organic light-emitting devices were produced. With respect to the organic light-emitting device of Comparative Example 3, the external quantum yield (10 mA / cm 2 ) of light actually extracted to the outside was measured. As a result, the red phosphor was 2.4%, the green phosphor. In the case of using 5.4, it was 5.4%. As a result, it was confirmed that the luminous efficiency of Example 3 was 1.56 times higher than that of Comparative Example 3.
  • the present invention can be applied to an organic light emitting device.
  • SYMBOLS 10 Organic light emitting element, 11 ... 1st board

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Abstract

L'invention concerne un élément luminescent organique qui est équipé : d'un premier substrat à son tour équipé, dans l'ordre, d'au moins une électrode, une couche luminescente et une électrode perméable à la lumière; et d'un second substrat configuré à partir d'un substrat transparent. En outre, dans cet élément luminescent organique sont agencées : une pluralité de couvercles de bord formés de manière espacée, qui tout en recouvrant au moins une partie de ladite électrode, est disposée côté latéral de ladite couche luminescente, possède des propriétés d'isolation ainsi que de réflexion de la lumière ou de diffusion de la lumière; et une pluralité de parois de séparation formées de manière espacée, et possédant des propriétés de réflexion de la lumière ou de diffusion de la lumière en des positions sur ledit substrat transparent s'opposant au moins aux dits couvercles de bord.
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