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WO2013060534A2 - Source de lumière laser - Google Patents

Source de lumière laser Download PDF

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Publication number
WO2013060534A2
WO2013060534A2 PCT/EP2012/068479 EP2012068479W WO2013060534A2 WO 2013060534 A2 WO2013060534 A2 WO 2013060534A2 EP 2012068479 W EP2012068479 W EP 2012068479W WO 2013060534 A2 WO2013060534 A2 WO 2013060534A2
Authority
WO
WIPO (PCT)
Prior art keywords
laser
light source
laser light
emitter
surface emitter
Prior art date
Application number
PCT/EP2012/068479
Other languages
German (de)
English (en)
Other versions
WO2013060534A3 (fr
Inventor
Hans-Jochen Schwarz
Joern Ostrinsky
Original Assignee
Robert Bosch Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch Gmbh filed Critical Robert Bosch Gmbh
Publication of WO2013060534A2 publication Critical patent/WO2013060534A2/fr
Publication of WO2013060534A3 publication Critical patent/WO2013060534A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18394—Apertures, e.g. defined by the shape of the upper electrode
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
    • F02P—IGNITION, OTHER THAN COMPRESSION IGNITION, FOR INTERNAL-COMBUSTION ENGINES; TESTING OF IGNITION TIMING IN COMPRESSION-IGNITION ENGINES
    • F02P23/00—Other ignition
    • F02P23/04—Other physical ignition means, e.g. using laser rays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4056—Edge-emitting structures emitting light in more than one direction

Definitions

  • the invention relates to a laser light source having a plurality of surface emitters arranged on a carrier element.
  • the resulting field characteristic of the laser light source can thereby be optimally adapted to the respective intended use of the laser light source.
  • At least two surface emitters are formed so that they each have a different field characteristic, in particular far field characteristic, whereby a further degree of freedom to achieve a desired resulting
  • Field characteristic in particular far field characteristic, is given for the laser light source.
  • At least two surface emitters differ from one another with regard to at least one of the following features: a. Training, in particular opening area and / or opening shape of a Stromapertur,
  • At least one surface emitter is arranged on the carrier element such that an optical axis of the surface emitter is not parallel to an optical axis of at least one further arranged on the carrier element
  • Surface emitter, in particular a predetermined angle with the optical axis of the at least one further surface emitter includes.
  • At least one surface emitter has a microlens for influencing the laser radiation generated by the surface emitter, in particular for influencing the main radiation direction of the field characteristic of the laser radiation generated. In a further advantageous embodiment it is provided that several
  • At least two microlenses each have different optical properties and / or a different orientation with respect to their respective associated surface emitter.
  • different surface emitters are each designed as a vertical cavity surface emitting laser, VCSEL, or as a vertical external cavity surface emitting laser, VECSEL.
  • a laser ignition system for an internal combustion engine in particular a motor vehicle or a stationary motor, proposed with a solid-state laser for generating laser ignition pulses and with at least one inventive
  • Laser light source for providing laser radiation for optical pumping of the solid-state laser.
  • a pumping optics is provided, which is designed to shape the radiation emitted by the laser light source, in particular to focus on the solid-state laser.
  • the pumping optics at least one optical element with regions
  • the at least one optical element is, for example, a radially or circularly segmented lens with a partially different surface curvature or a free-form element.
  • FIG. 1 shows a schematic side view of a first embodiment of a laser light source according to the invention
  • FIG. 2a is a diagrammatic representation of FIG. 1a
  • FIG. 3 schematically shows a side view of a further embodiment of the invention
  • Figure 4 schematically shows a greatly enlarged cross-section of a
  • FIG. 5a
  • FIG. 5 b schematically shows a respective far-field characteristic as represented by
  • FIG. 6 shows a schematic side view of a laser ignition system according to an embodiment, FIG. 7a,
  • FIG. 7b schematically shows a cross section of a further embodiment of a surface emitter in different operating states
  • FIG. 8a
  • FIGS. 7a, 7b schematically each show a far-field characteristic of the embodiments according to FIGS. 7a, 7b,
  • Figure 10 shows schematically a side view of yet another embodiment of the invention.
  • FIG. 1 schematically shows a side view of a first embodiment of the laser light source 100 according to the invention.
  • the laser light source 100 has a carrier element 300 formed, for example, as a common substrate, on which, as shown in FIG. 1, a plurality of surface emitters 200a, 200b, 200c are arranged.
  • the surface emitters 200a, 200b, 200c are surface-emitting semiconductor diode lasers, the basic function and structure of which are known per se to a person skilled in the art.
  • different surface emitters 200a, 200b are each designed in such a way that main beam directions H1, H2 of the laser radiation emitted by them are not parallel to one another. This advantageously results in a degree of freedom in the synthesis of one of the
  • the main beam direction is that spatial direction in which the optical power radiated by a surface emitter has an absolute maximum ("main lobe").
  • the main radiation direction is understood to be an angle between one of the main lobes and a surface normal of a coupling-out mirror of the surface emitter.
  • Field characteristic (approximately circular intensity distribution in a plane orthogonal to the optical axis of the surface emitter), is understood by the main beam direction in the context of the present invention, the optical axis.
  • the laser light source 100 has the advantage that one or more surface emitter 200a, 200b, 200c each have different main beam directions H1, H2, H3 for the laser radiation generated by them, whereby the resulting field characteristic of the laser light source 100 total emitted laser radiation can be influenced within wide limits and thus optimally adapted to a target system.
  • the laser light source 100 has, for example, a total of four surface emitters of the type 200a, whose main radiation direction H1 is in each case substantially orthogonal to a surface of the carrier element 300. Furthermore, two surface emitters 200b are provided, the main radiation direction H2 of which in each case encloses an acute angle with the main radiation direction H 1 of the first surface emitter type 200a. The same applies to the third type of surface emitter 200c with the
  • Main beam direction H1, H2, H3 may be the resulting field characteristic of Laser radiation of the laser light source 100 can be influenced within wide limits.
  • numerical simulations can be used to simulate a multiplicity of different configurations of surface emitters 200a, 200b, 200c on the carrier element 300, each with different main beam directions H 1, H 2, H 3, and simulate them with respect to an objective function, for example a desired resulting field characteristic of the laser radiation one or more configurations can be obtained which satisfy the given requirements, for example a homogeneity of the far field characteristic over a predefinable solid angle range.
  • FIG. 2 a schematically shows a plan view of a laser light source 100 according to a further embodiment.
  • the surface emitters of the laser light source 100 symbolized here as a circle, have a non-constant packing density. That means not all
  • Surface emitters each have an equal distance to their adjacent surface emitters.
  • a horizontal location coordinate with the reference symbol x and a vertical location coordinate with the reference symbol y are defined.
  • all surface emitters have the same distance to their neighbors. This means that the horizontal rows of surface emitters depicted in FIG. 2a each have an identical spacing d3 from one another.
  • a distance between surface emitters adjacent along the x-coordinate is not constant over the entire carrier element 300.
  • a surface emitter 200d of the surface emitter 200c arranged on the top left in FIG. 2a has a horizontal distance d1 which is greater than the horizontal distance d2 between the surface emitter 200d and a further surface emitter 200d 'adjacent to the right in FIG. 2a.
  • a distance between the surface emitter 200d 'and a further surface emitter 200d is again d2, whereas a further distance between the surface emitter 200d" and a surface emitter d1, which is arranged to the right thereof in FIG. 2a, is d1.
  • Laser radiation of the laser light source 100 given.
  • all the surface emitters of the laser light source 100 according to FIG. 2a can be designed identically, and the shaping of the resulting field characteristic takes place solely by influencing the packing density.
  • surface emitters of different types may be used and combined with a non-constant packing density.
  • FIG. 2b shows a further embodiment of the invention in which a plurality of rows or columns of surface emitters 200e, 200f are again provided.
  • the outer surface emitters 200e of the embodiment according to FIG. 2b accordingly have a greater vertical distance d5 from them
  • adjacent inner surface emitters 200f which have a smaller distance d6 between them.
  • FIG. 2c shows a further embodiment of the invention, in which the
  • Packing density is not constant along the x coordinate as well as along the y coordinate over the carrier element 300.
  • an outer emitter group Arranged around this inner emitter group is an outer emitter group which extends along the edge of the carrier element 300 and whose emitters have a neighboring distance d8 between them. Furthermore, the outer surface emitters in FIG. 2c also have a neighboring distance d8 to the inner emitter group.
  • FIG. 3 shows schematically a side view of a further embodiment of the invention.
  • a support member 300 On a support member 300 a plurality of surface emitter 200g, 200h, 200i are arranged.
  • the surface emitters of the type 200g are arranged relative to the carrier element 300 and arranged thereon so that their optical axis OA is substantially perpendicular to a surface of the carrier element 300, ie parallel to the surface normal (not shown) of the carrier element 300 stands.
  • the surface emitters 200h, 200i are oriented with respect to the carrier element 300 such that their optical axes OA ', OA "are not parallel to the surface normal of the carrier element 300.
  • a further influencing of the resulting field characteristic of the laser light source 100 can be effected .
  • the different emitters 200g, 200h, 200i according to FIG. 3 can advantageously also have the same design parameters, but be aligned on the carrier element 300 by individual mounting such that their respective optical axes OA, OA ', OA2' satisfy the abovementioned criteria.
  • the surface emitters 200g, 200h, 200i may also constructively designed differently, for example, to each cause different field characteristics of the laser radiation generated by them, whereby further combination possibilities or degrees of freedom for obtaining a resulting field characteristic of the laser light source 100 are given.
  • the embodiment according to FIG. 3 has different effects
  • FIG. 4 schematically shows an enlarged cross section of a
  • the surface emitter 200 has a first mirror layer 202, which may be, for example, a distributed Bragg reflector (DBR), that is to say a layer sequence of substrate layers, each having a different refractive index, formed in a vertical direction in FIG.
  • a Auskoppelapttik 204 is also formed as a DBR and includes, together with the first mirror layer 202, an active region 206 of the surface emitter 200, for example, a
  • DBR distributed Bragg reflector
  • Quantum film 208 or other suitable elements, such as
  • Quantum dots Quantum dots, quantum wires may have to generate
  • a current density distribution in the region of the coupling-out mirror 204 and in the region of the active zone 206 can be influenced by a current diaphragm 210.
  • a current diaphragm 210 In particular, through the opening width 210 a or Opening surface of the current diaphragm 210 a Stromapertur 210b are defined, which substantially the field characteristics, in particular
  • a current contact 212 is on the upper surface in FIG.
  • Auskoppelapt provided 204 and serves to supply the
  • control device 400 which supplies the surface emitter 200 by means of a drive signal A with electrical energy to put the surface emitter 200 in an active state in which it generates the laser radiation L.
  • Another power contact is not shown in FIG. 4, but may for example be provided between the components 202, 300 and also connected to the controller 400 to close a circuit between the controller 400 and the surface emitter 200.
  • the surface emitter 200 may be arranged on a surface of the carrier element 300 in the manner illustrated schematically in FIG. 4, as can further surface emitters 200 not shown in FIG.
  • Laser light source 100 at least two surface emitter 200 differ from each other with regard to at least one of the following features: a training, in particular opening area and / or opening shape of the current aperture 21 Ob,
  • Such surface emitter types can be combined with one another according to the invention in order to form the laser light source 100.
  • a non-constant packing density or a mechanical alignment of the individual surface emitters with respect to the common carrier element 200 can also be used.
  • FIG. 5a shows, by way of example, a first far-field characteristic FFC1 in the form of an optical power P of the laser radiation L (FIG. 4) plotted against an unspecified number, which extends in the horizontal direction in FIG. 5 and represents the angular coordinate.
  • This first far-field characteristic FFC1 can be achieved, for example, by a first configuration of a surface emitter 200 (FIG. 4) by means of the abovementioned measures a to d.
  • the current aperture 210b is preferably formed in approximately circular or oval, according to a further advantageous embodiment, the current aperture also substantially slot-shaped, that is rectangular, are formed with an aspect ratio of width to height greater than 2: 1, whereby a division of field characteristics the laser radiation L of the surface emitter 200 is possible from a single main lobe to two main lobes arranged symmetrically about the optical axis.
  • the main beam direction (angle between the main lobe and the optical axis of the surface emitter) can be influenced, in order in turn to provide different surface emitter 200 types.
  • FIG. 6 shows components of a laser ignition device 1000, as they are
  • the Laser ignition device 1000 has at least one laser light source 100 according to the present invention and a solid state laser 600, which is optically pumped by means of the laser control device L1 generated by the laser light source 100.
  • a configuration for the longitudinal optical pumping is shown, in which the pump radiation L1 in the left in Figure 6 end face 602 of the im
  • Essentially circular-cylindrical solid-state laser 600 is irradiated. Upon application of the pump radiation L1 generates the
  • Solid-state laser 600 in a conventional manner high-energy laser ignition pulses LZ.
  • Field characteristic in particular far field characteristic, for the pump radiation to achieve L1.
  • a very homogeneous pumping profile 604 are generated (constant optical power over the end face 604), which has a positive effect on the beam quality of the laser ignition pulses LZ and the efficiency in the optical pumping of the solid-state laser 600.
  • the main radiation direction HR of the generated laser radiation L1 and / or its distribution, e.g. over a predeterminable solid angle ⁇ be set within wide limits.
  • Figure 6 also in Figure 6 between the solid state laser 600 and the
  • Laser light source 100 pictured pumping optics 500 may be provided, which may be, for example, an optical element with partially different optical properties, in particular different focal length. These different areas can, for example, segmentally or annularly different in the radial direction over the optical
  • the at least one optical element has a radially or circularly segmented lens with regions of different surface curvature or a
  • FIG. 7a shows a further embodiment of a surface emitter which in the present case has two current contacts 212a, 212b, which are spaced apart from the current stop 210 by the distances d3 ', d4'.
  • FIG. 7a only the first current contact 212a is acted upon by the control device 400 by means of the drive signal A1, so that a first current density distribution results in the emitter in the operating state according to FIG. 7a.
  • This operating state corresponds to the far field characteristic FFC5 schematically illustrated in FIG. 8a.
  • Figure 7a By choosing a suitable operating state, Figure 7a, Figure 7b, therefore even dynamically, that is, during operation of the laser light source 100 (Figure 1) a far field characteristic FFC5, FFC6 individual surface emitter can be changed, so that a further increased flexibility in achieving a desired resulting field characteristic of the laser light source 100 is given.
  • FIG. 9 shows a further embodiment of the invention in a schematic side view.
  • a plurality of surface emitters 200j are juxtaposed.
  • Each surface emitter is a microlens
  • the microlens 2020 which is designed to shape the laser radiation L (FIG. 4) generated by the surface emitter 200j.
  • the microlens 2020 may be formed and arranged with respect to the surface emitter 200j to match the original main radiation direction H4 of the
  • a laser light source can advantageously also be indicated in the embodiment according to FIG. 9, in which different types of surface emitters are provided such that the laser radiation emitted by the individual surface emitters differs
  • FIG. 10 shows a side view of a further embodiment of the invention, in which, in turn, different surface emitters 200k are assigned different microlenses 2020a, 2020b. According to the invention
  • Microlenses 2020a, 2020b each formed differently or arranged differently with respect to their associated surface emitter 200k, so that for one or more surface emitter 200k individually shaping of the laser radiation generated by it is possible.
  • a combination of different types of surface emitters in particular of VCSEL types or of VECSEL types, is also conceivable, as is the combination of the formation of the different surface emitters with differing structural features and a non-constant packing density.
  • the use of surface emitters of different types achieves a resultant field characteristic for the laser radiation L1 emitted altogether by the laser light source 100, which corresponds to predefinable criteria or to a desired course.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention concerne une source de lumière laser (100) comprenant une pluralité d'émetteurs (200, 200a, 200b,..) à émission surfacique disposés sur un élément support (300), caractérisée en ce que différents émetteurs (200a, 200b) à émission surfacique sont respectivement conçus et/ou disposés les uns par rapport aux autres sur l'élément support (300), de façon que les directions principales (H1, H2) du rayonnement laser qu'ils émettent ne sont pas mutuellement parallèles, et/ou en ce qu'une densité d'assemblage qui décrit une distance entre un premier émetteur (200c) à émission surfacique et au moins un émetteur (200d) à émission surfacique adjacent dans au moins une dimension, n'est pas constante.
PCT/EP2012/068479 2011-10-27 2012-09-20 Source de lumière laser WO2013060534A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011085344.8A DE102011085344B4 (de) 2011-10-27 2011-10-27 Laserlichtquelle
DE102011085344.8 2011-10-27

Publications (2)

Publication Number Publication Date
WO2013060534A2 true WO2013060534A2 (fr) 2013-05-02
WO2013060534A3 WO2013060534A3 (fr) 2013-07-25

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2012/068479 WO2013060534A2 (fr) 2011-10-27 2012-09-20 Source de lumière laser

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Country Link
DE (1) DE102011085344B4 (fr)
WO (1) WO2013060534A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020224811A1 (fr) 2019-05-09 2020-11-12 Lumileds Holding B.V. Dispositif électroluminescent
DE102019133797A1 (de) * 2019-12-10 2021-06-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laser-lichtquelle und lidar-system mit der laser-lichtquelle
DE102021128379A1 (de) 2021-10-29 2023-05-04 Trumpf Photonic Components Gmbh Laservorrichtung

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US6084900A (en) * 1997-12-24 2000-07-04 Motorola, Inc. Annular waveguide vertical cavity surface emitting laser array and method of fabrication
JP2002026466A (ja) 2000-07-11 2002-01-25 Toyota Central Res & Dev Lab Inc 集光光学系及びレーザ加工機用光源
US6888871B1 (en) 2000-07-12 2005-05-03 Princeton Optronics, Inc. VCSEL and VCSEL array having integrated microlenses for use in a semiconductor laser pumped solid state laser system
DE60333632D1 (de) * 2003-09-01 2010-09-16 Avalon Photonics Ag Hochenergie-Topemitter-VCSEL
JP4058635B2 (ja) * 2003-09-18 2008-03-12 セイコーエプソン株式会社 面発光型半導体レーザおよびその製造方法
TWM276556U (en) 2005-03-04 2005-10-01 Biotek Technology Corp Improvement of optical system structure for treatment and cosmetology
JP4839662B2 (ja) 2005-04-08 2011-12-21 富士ゼロックス株式会社 面発光半導体レーザアレイおよびそれを用いた光伝送システム
US7460578B2 (en) * 2005-04-11 2008-12-02 Finisar Corporation On-chip lenses for diverting vertical cavity surface emitting laser beams
US7430231B2 (en) * 2005-04-29 2008-09-30 Ningyi Luo Vertical cavity surface emitting laser (VCSEL) arrays pumped solid-state lasers
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Also Published As

Publication number Publication date
WO2013060534A3 (fr) 2013-07-25
DE102011085344A1 (de) 2013-05-02
DE102011085344B4 (de) 2022-12-01

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