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WO2013050563A2 - Composant à semi-conducteurs présentant une structure multicouche et module formé à partir de ce composant - Google Patents

Composant à semi-conducteurs présentant une structure multicouche et module formé à partir de ce composant Download PDF

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Publication number
WO2013050563A2
WO2013050563A2 PCT/EP2012/069776 EP2012069776W WO2013050563A2 WO 2013050563 A2 WO2013050563 A2 WO 2013050563A2 EP 2012069776 W EP2012069776 W EP 2012069776W WO 2013050563 A2 WO2013050563 A2 WO 2013050563A2
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WO
WIPO (PCT)
Prior art keywords
solar cell
semiconductor component
layer
component according
bypass diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2012/069776
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German (de)
English (en)
Other versions
WO2013050563A3 (fr
Inventor
Maike Wiesenfarth
Wolfgang Guter
Henning HELMERS
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
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Publication of WO2013050563A2 publication Critical patent/WO2013050563A2/fr
Publication of WO2013050563A3 publication Critical patent/WO2013050563A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/142—Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/70—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising bypass diodes
    • H10F19/75—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising bypass diodes the bypass diodes being integrated or directly associated with the photovoltaic cells, e.g. formed in or on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/215—Geometries of grid contacts
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to a semiconductor device in the multilayer structure, in which a bypass diode is monolithically integrated into the semiconductor device. Likewise, the invention relates to modules which are constructed from a plurality of these semiconductor components. The invention particularly relates to multiple solar cells in photovoltaics.
  • the interconnection can be monolithic or mechanical.
  • the p-n junctions consist of semiconductor materials with different bandgap, mostly of germanium and / or so-called III-V compound semiconductors, which are material compositions of the elements of III. and V. main group, e.g. gallium arsenide,
  • Gallium indium arsenide or gallium indium phosphide or other semiconductors, such as II-VI compound semiconductors.
  • the band gap energy of the pn junctions increases from the lowest to the highest solar cell.
  • a solar module several multiple solar cells are often connected in series. When connected in series in a module, the current intensity is limited by the solar cell with the lowest current generation, while the voltages of the interconnected solar cells add up. If a solar cell now supplies less than the other solar cells connected in series, or no power at all, the current flow is limited or completely interrupted. In order to prevent this, the current flow is ensured in the module by the use of bypass diodes and the shaded solar cell is protected against destruction.
  • a bypass diode is a diode that is anti-parallel to the solar cell.
  • a further current path is opened. In the case of reducing current generation of a solar cell within a PV module, e.g. due to shading or defect, this shaded solar cell is not loaded in breakthrough and could be destroyed, but the current flows through the bypass diode. In the case of shading (or other reason for low current generation in the solar cell), the voltage drop across the bypass diode increases until its
  • Threshold voltage is reached. Then the current flows through the bypass diode. In this case, a small voltage loss is generated.
  • the power of the shaded / defective solar cell connected in parallel with the bypass diode is absent in the overall yield, but the defective / shaded solar cell is protected.
  • the bypass diode blocks to prevent losses. gen. It flows a very low reverse current.
  • Concentrator modules with high current densities and series connection ideally each solar cell is protected by a bypass diode.
  • Multiple solar cells are used in terrestrial applications. There, concentrated light is converted into electricity.
  • the concentration of light is realized by reflective or refractive optics, such as mirrors or lenses.
  • the light is focused on the solar cell.
  • the concentration factor of light is up to 50-fold in low-concentration systems, 50 to 200-fold in medium concentrations, and 100 to more than 1500 times in high-concentration systems. Due to the concentration of light, the solar cell area can be reduced by about the concentration factor. Through the use of cost-effective optics costs can be minimized.
  • the second major area of application concerns space applications.
  • the materials of compound semiconductors of the 3rd and 5th main group are used due to their high radiation stability and their lower temperature dependence compared to silicon. Due to the high efficiencies of the multiple solar cells also results in a lower weight for the generation of a given electrical power.
  • Multiple solar cells consist of several pn junctions, which are connected in common series.
  • the layers of the multiple solar cells are usually by metal organic vapor phase epitaxy (MOVPE, metal organic vapor phase expitaxy) or others epitaxial processes, such as LPE (liquid phase epitaxy) or MBE molecular beam epitaxy) grown on a substrate (doped or undoped) in crystalline layers.
  • MOVPE metal organic vapor phase epitaxy
  • LPE liquid phase epitaxy
  • MBE molecular beam epitaxy molecular beam epitaxy
  • Tunnel diodes are highly doped diodes, which are inversely connected to the solar cells. This means that the n-doped layer of the solar cell is followed by the highly doped n-layer (usually written n ++ ) of the tunnel diode. After the highly doped p-layer (p ++ ) of the tunnel diode, the p-doped layer follows the next solar cell.
  • Typical dopants of the tunnel diodes are in the range of 1 * 10 19 to over 1 * 10 20 1 / cm 3 .
  • the dopants of the solar cells are in the range of 1 * 10 16 and 8 * 10 18 1 / cm 3 .
  • additional layers such as barrier layers, window layers and passivation layers.
  • each single multiple solar cell in a series connection is protected by a bypass diode.
  • separate protective diodes are usually connected to one another by metal contacts. This means that the solar cell and the bypass diode are mounted on a substrate and then, e.g. be connected electrically via wire bonding processes.
  • bypass diode When the bypass diode is placed next to the cells to be protected, the bypass diode is in the area of concentrated radiation. Then active area that could otherwise be used to generate electricity is lost. However, when the bypass diodes are mounted in the periphery, contacting the individual solar cells in the center of the module and focusing is difficult.
  • Another . Technology is mostly used in space photovoltaic modules and integrates the layers of the p-n junction of the bypass diode directly on or under the solar cell. This can be achieved either by chip bonding techniques or by growing the additional epitaxial layers on or under the solar cell layers or the substrate. This is e.g. in US 6,316,716 and US 6,452,086.
  • bypass diodes when bypass diodes are grown by additional layers on the wafer substrate, is that the surface of the bypass diode partially shadows the solar cell and a loss of area in the irradiated area arises. Also in US 6,316,716, in which additional layers are grown on the wafer substrate, the area of the bypass diode means a loss of active area.
  • bypass diode on the back by bonding processes. This creates an additional thermal resistance and the thermal connection to the substrate deteriorates. A very good thermal connection is important because almost the entire heat flow is dissipated via the substrate, which hits the solar cell and is not reflected or converted into electrical energy.
  • Another disadvantage is that the electrical serial connection of the solar cell with the next solar cell is difficult to implement.
  • the underside of the bypass diode must be electrically isolated from the back of the multiple solar cell and contacted with the front of the multiple solar cell. This means that areas on the bottom must be electrically isolated.
  • an additional tunnel diode is incorporated to change the polarity of the material.
  • the current flows through the p-n junctions of the multiple cell (or the p-n junction in single solar cells).
  • the current flows across the antiparallel, i. parallel and backward, switched p-n junction of the bypass diode (R. Löckenhoff: "Development,
  • Integrated modules can only be realized using semi-insulating substrate material because the segments must be electrically isolated from each other.
  • the current state of the art for MIMs is a single or dual solar cell.
  • the prior art for multiple cells is the triple solar cell.
  • the applications and developments go even more towards four or more pn junctions, as higher efficiencies can be achieved.
  • materials having a low band gap energy are commonly used in multi-junction solar cells having three or more pn junctions for the lowest pn junction.
  • a larger part of the incident spectrum can be absorbed.
  • germanium with a band gap of 0.7 eV is suitable.
  • the Ge subcell is typically generated by diffusion activation of a p-Ge substrate with group V elements from the III-V epitaxy.
  • group V elements from the III-V epitaxy.
  • an arsenide or phosphide layer for example GaAs or GalnP, is deposited over the substrate.
  • group V atoms from this layer diffuse into the substrate and overcompensate for the existing p-doping until the top layer of the substrate is finally n-doped and a pn junction is formed.
  • the substrate material in this case is not electrically insulating, as is necessary for MIMs. This means that on n- or p-germanium substrates no MIMs and thus also no triple solar cell MIMs can be produced.
  • a semiconductor component is provided in the multilayer structure which contains the following components:
  • At least one solar cell made of a substrate made of electrically conductive semiconductor material and having a base layer (the lower one)
  • Layer of the sun-oriented pn junction and above which has an emitter layer (the top layer of the sun-oriented pn junction), one layer being n-doped and the other layer being p-doped,
  • the bypass diode has a p-doped layer and an n-doped layer and is epitaxially integrated between the pn junctions of the at least two solar cells and contacted in parallel against the at least two other pn junctions.
  • the energy band gap of the solar cells decreases from the solar cell directly exposed to the solar radiation (uppermost pn junction) in the direction of the substrate (lowest solar cell).
  • the bypass diode is made of a material having an energy bandgap equal to or greater than the energy bandgap of the p-n junction deposited above the bypass diode.
  • the base layer and the emitter layer of the at least one bypass diode preferably have the same doping sequence of the p-n junctions as the other solar cells (towards the solar irradiated side to the substrate).
  • At least one electrically conductive layer is arranged as a transverse conductive layer, which has electrical contact with at least one adjacent layer and over which the current is conducted laterally. It is further preferred that the at least one transverse conductive layer has exposed contacting surfaces, via which electrical contacting can take place.
  • the transverse conductive layer has preferably a sheet resistance of less than 3 ⁇ .
  • a further preferred embodiment provides that the base (lowest layer) of the lowest p-n junction is electrically contacted with the emitter of the uppermost p-n junction.
  • the electrical contacts described above can be effected by means of bonding wire and / or by means of a conductor strip and / or by vapor deposition or galvanization of a conductive metal.
  • At least one tunnel diode is arranged between the transverse conductor layers and the bypass diode or solar cell for making electrical contact.
  • the semiconductor device has a full-area backside contact. This means that the rear side is metallised on all sides and the electric current can be distributed and conducted there with low ohmic losses.
  • the substrate is preferably made of doped compound semiconductor material, e.g. from the group consisting of III-V compound semiconductors, germanium, silicon or II-VI compound semiconductors. Particularly preferred here are germanium, silicon and gallium arsenide.
  • the semiconductor component preferably has lattice-matched partial solar cells and / or lattice mismatched te.
  • Partial solar cells in particular of silicon, germanium or elements of the III. and V. or II. and VI. Main group of elements, on.
  • the layers of the semiconductor device are formed by epitaxially grown layers.
  • the semiconductor component can have further layers, in particular selected from the group of barrier layers, window layers, passivation layers and combinations thereof.
  • a module of a plurality of series-connected semiconductor components, as described above, is likewise provided.
  • the semiconductor devices are contacted via the contact surfaces, in particular by wire bonds or conductor strips.
  • Figure 1 shows an equivalent circuit diagram of a triple solar cell and a bypass diode according to the prior art.
  • FIG. 2 shows an equivalent circuit diagram of a single segment of a tandem MIM with two solar cells and a bypass diode connected in parallel.
  • FIG. 3 shows a circuit diagram with a spatial arrangement of two series-connected triple solar cells according to the prior art.
  • FIG. 4 shows a circuit diagram with a spatial arrangement of two series-connected triple solar cells according to the present invention.
  • the difference with the prior art is the order of the interconnected sub-cells.
  • FIG. 5 shows a schematic representation of the structure and interconnection of a semiconductor component according to the invention.
  • FIG. 6 shows an equivalent circuit diagram of a semiconductor component according to the invention.
  • FIG. 7 shows an equivalent circuit diagram of a further semiconductor component according to the invention.
  • FIG. 8 shows a schematic representation of the structural interconnection of a further semiconductor component according to the invention.
  • FIG. 9 shows a solar cell structure according to the invention with contact grid.
  • FIG. 10 shows a further solar cell structure with contact grid.
  • FIG. 11 shows a further solar cell structure with contact grid.
  • FIG. 12 shows a further solar cell structure with contact grid.
  • FIG. 13 shows a further solar cell structure with contact grid without front side metallization.
  • FIG. 14 shows a further solar cell structure with contact grid.
  • FIG. 1 shows the equivalent circuit diagram of a triple solar cell (germanium Ge, gallium arsenide GaAs, gallium indium phosphide GalnP) with an anti-parallel bypass diode BP.
  • J is the current density and is drawn in the technical current direction.
  • R c are ohmic resistors at the contacts and TD the tunnel diodes to allow electron flow from n to p in monolithic structures (doping of the pn junction could be the other way round).
  • FIG. 2 shows the equivalent circuit diagram of a segment of an MIM with parallel-connected bypass diode.
  • tunnel diodes TD are installed.
  • transverse conduction layers QLS are provided for the monolithic interconnection and the contacting of the bypass diode BP.
  • the substrate of the solar cell consists of electrically conductive semiconductor material (eg doped germanium or silicon, or doped gallium arsenide).
  • the layers of the bypass diode are monolithically integrated in the layer sequence of the solar cell. That is, they have grown neither on the layers of solar cells nor under the substrate, but in between. To accomplish this, the order of series connected pn junctions is changed.
  • the bypass diode is integrated so that no additional pn junction is needed. shading occurs.
  • the radiation of the underlying solar cell is transmitted, ie the energy band gap is greater than or equal to the energy band gap of the GalnAs cell.
  • the epitaxial layers of the bypass diode are monolithically grown, eg with an MOVPE process.
  • materials are selected which transmit the absorption wavelength range of the underlying solar cell.
  • the bandgap energy of the pn junction of the bypass diode must therefore be greater than or equal to that of the pn junction of the overlying solar cells.
  • the energy E of the radiation decreases in proportion to l / ⁇ .
  • the p-n junction of the bypass diode is poled analogously to that of the solar cells.
  • the base of the solar cells is p-doped and the emitters are n-doped
  • the lower layer of the diode is also p-doped
  • the upper layer is n-doped (and vice versa).
  • FIG. 5 illustrates the position of the contacting surfaces. Adjacent multiple solar cells are contacted via metallic connectors 7a. For this purpose, surfaces with metallization 8a, 8b are applied to the transverse conductive layers 5a, 5b. This connection is referred to as "bond.” The base of the lowermost solar cell 3 is contacted via the rear side metallization 11 to the front side metallization 10 to the emitter of the uppermost solar cell 1.
  • middle solar cell s
  • solar cell 2 with at least one p-n junction emitter and base
  • the uppermost solar cell and the middle (one or more) solar cells are connected in series by tunnel diodes.
  • the presented type of connection connects the base of the lowermost subcell with the emitter of the uppermost subcell via the contact 7b.
  • the emitter of the lower subcell is connected to the base of the middle subcells via the contact 7a.
  • transverse conduction layers are implemented, which are transparent analogous to the layers of the bypass diode for usable in the lowest cell photons. These are inserted on the one hand between the lowest solar cell and bypass diode, on the other hand between the bypass diode and the middle solar cell. In these transverse conductive layers, the current is transported laterally to the metal contacts. In order to achieve the highest possible electrical conductivity for low power losses, the highest possible doping is required. In the case of gallium arsenide, for example, a doping of 1 ⁇ 10 17 to 1 ⁇ 10 19 1 / cm 3 can be achieved
  • the back of the solar cell is metallized over the entire surface.
  • the current is transported as lossless as possible to the contact of the base of the lowermost solar cell 3 with the emitter of the uppermost solar cell 1.
  • the bypass diode 6 is disabled in normal operation for a current flow.
  • the tunnel diode 5b serves only to change the polarity and conducts the current in both directions with a small voltage drop. In the case of shading (or other cause of low current generation in the solar cell), the voltage drop across the bypass diode increases until its threshold voltage is reached. Then the current no longer flows through the solar cell, but directly between the two cross-conducting layers through the bypass diode. Thus, the shaded / defective cell is protected by the bypass diode from damage.
  • bypass diode is connected by the contacting electrically on the transverse conducting layers parallel to the solar cells and is doped against the doping of the solar cells.
  • FIG. 6 the electrical equivalent circuit diagram of the monolithic structure and contacting proposed here is shown in FIG. 6 - by way of example for a triple-junction solar cell with a p-doped germanium substrate.
  • the contact (R c bond ) from the neighboring cell or the electrical connection is not contacted like conventional contacts with the backside metallization (p-contact) of the germanium cell (solar cell 3). Instead, it is contacted between the base of the solar cell 2 (here p-doped) and the emitter of the cell 3 (here n-doped).
  • p-contact of the germanium cell is connected in series via a metallic contact (R c bond ) to the uppermost cell 1.
  • the p-contact of the uppermost solar cell 1 (made of gallium indium phosphide GalnP) is connected in series via a tunnel diode with the n-contact of the central solar cell 2 (for example of gallium arsenide GaAs).
  • the contact to the next multiple solar cell is made via the p-contact of the solar cell 2.
  • the bypass diode BP is connected in parallel and doped inversely to the solar cells.
  • the transverse conductive layers QLS2 and QLS1 are installed for contacting the solar cells and the bypass diode.
  • a tunnel diode is incorporated for contacting the p-contact of the bypass diode with the n-doped second transverse conduction QLS2 .
  • FIG. 7 again shows the equivalent circuit diagram of the invention for clarification. The components are drawn in the order they have grown.
  • FIG. 2 shows a second concept for realizing a monolithic contacting of the base of the solar cell 3 with the emitter of the solar cell 1.
  • the advantage is that the contacting takes place by processing the wafer and not only after sawing the wafer.
  • etching is carried out on the wafer into the substrate (solar cell 3) on the base in order to enable contacting of the base of solar cell 3.
  • the lateral, thereby exposed surfaces of the pn junctions of the remaining solar cells are electrically insulated via an insulating layer.
  • a suitable polyimide, silicon carbide (SiC), silicon nitride (SiN) or silicon dioxide (SiO 2 ) can be used.
  • the contacts 8a and 8b are led into the growth plane via a contact grid.
  • a contact grid In case of multiple In the presence of concentrated light, currents of up to 0.5 to 8 A must be conducted across the cross-conducting layer to the lateral contacts. In the case of the space solar cells ⁇ below the standard spectrum AMO), this is about 0.1 to 0.15 A. The current must flow via the transverse conducting layers and ohmic losses occur due to the sheet resistance of the transverse conducting layer. An additional contact grid reduces the loss of resistance in the crossover layers, as the current can travel a shorter distance.
  • the contact gratings are applied to the transverse conductive layers. For this purpose, grid-structured surfaces on the transverse conducting layers (eg by etching processes) must be exposed. The contact fingers are made of metal and therefore have better electrical conductivity.
  • FIGS. 9 to 13 The principle is shown in FIGS. 9 to 13 in different views.
  • the plan view of the solar cell can be seen in FIG.
  • the fingers of the contacts on the transverse conductive layers 8a and 8b and the front side metallization 10 can be seen.
  • FIG. 10 shows the layers of the solar cell and the contact on the second transverse conducting layer 8b.
  • Fig. 11 the view is directed to the contact of the first cross conduction layer 8a.
  • FIG. 12 shows a contacting form as shown in FIG. 8, but here the contacting of the emitter of the solar cell 1 is not at the edge but in the middle of the solar cell based on solar cell 3 led. Even so, the length over which the stream must flow becomes shorter.
  • FIG. 12 shows, in a sectional view, how the base of the lowermost solar cell 3 is contacted with the emitter of the uppermost solar cell 1.
  • etching is carried out from above through the entire layer sequence onto the base of the lowermost solar cell (or the substrate).
  • the etch edges are electrically isolated 9 (e.g., with polyimide or silicon nitride).
  • a metal connection is made between front side metallization and base of the lowest solar cell.
  • FIGS. 13a) and 13b the top view and side view of the solar cell are shown before the front side metallization and the electrical connection between the bottom and top solar cells have been applied.
  • Another optimization option is to apply the metallizations of the transverse conductive layers from below, as shown in FIGS. 14a) and 14b).
  • Trenches can also be etched from the back, thereby reducing the loss of active area in the upper cells. In terms of process technology, however, this is more difficult to realize for cells with a wafer substrate (for example germanium) since the entire substrate (layer thickness 130 to 500 ⁇ m) must be etched for this purpose. By contrast, the upper layer thicknesses are only 5 to 20 ⁇ m thick. This embodiment is particularly suitable for ultrathin solar cells, which consist only of the layers of the pn junction without stabilizing substrate.

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  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne un composant à semi-conducteurs présentant une structure multicouche, une diode de dérivation étant intégrée de manière monolithique dans le composant à semi-conducteurs. Cette invention concerne également un module formé à partir de plusieurs composants à semi-conducteurs de ce type. L'invention concerne en particulier des cellules solaires multiples du type photovoltaïque.
PCT/EP2012/069776 2011-10-07 2012-10-05 Composant à semi-conducteurs présentant une structure multicouche et module formé à partir de ce composant Ceased WO2013050563A2 (fr)

Applications Claiming Priority (2)

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DE102011115340A DE102011115340A1 (de) 2011-10-07 2011-10-07 Halbleiterbauelement im Mehrschichtaufbau und hieraus gebildetes Modul
DE102011115340.7 2011-10-07

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WO2013050563A2 true WO2013050563A2 (fr) 2013-04-11
WO2013050563A3 WO2013050563A3 (fr) 2013-06-06

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