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WO2013043794A3 - Liquid metal ion source, system and method - Google Patents

Liquid metal ion source, system and method Download PDF

Info

Publication number
WO2013043794A3
WO2013043794A3 PCT/US2012/056216 US2012056216W WO2013043794A3 WO 2013043794 A3 WO2013043794 A3 WO 2013043794A3 US 2012056216 W US2012056216 W US 2012056216W WO 2013043794 A3 WO2013043794 A3 WO 2013043794A3
Authority
WO
WIPO (PCT)
Prior art keywords
ion source
liquid metal
metal ion
well
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2012/056216
Other languages
French (fr)
Other versions
WO2013043794A2 (en
Inventor
Randall G. Percival
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss NTS LLC
Original Assignee
Carl Zeiss NTS LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss NTS LLC filed Critical Carl Zeiss NTS LLC
Publication of WO2013043794A2 publication Critical patent/WO2013043794A2/en
Publication of WO2013043794A3 publication Critical patent/WO2013043794A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00Ion beam tubes
    • H01J27/02Ion sources; Ion guns
    • H01J27/26Ion sources; Ion guns using surface ionisation, e.g. field effect ion sources, thermionic ion sources
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08Ion sources; Ion guns
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04Means for controlling the discharge
    • H01J2237/045Diaphragms
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06Sources
    • H01J2237/08Ion sources
    • H01J2237/0802Field ionization sources
    • H01J2237/0805Liquid metal sources

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

A liquid metal ion source (110), as well as a related system (100) and method are disclosed. The liquid metal ion source can include a sputter shield (120) that comprises an alloy containing the same metal as the liquid metal ion source, a sputter shield configured to have a positive voltage applied thereto, and/or a gas handling system configured to control the constituent(s) of a gas introduced to the liquid metal ion source, as well as the gas pressure of the gas introduced to the ion source.
PCT/US2012/056216 2011-09-22 2012-09-20 Liquid metal ion source, system and method Ceased WO2013043794A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161537693P 2011-09-22 2011-09-22
US61/537,693 2011-09-22

Publications (2)

Publication Number Publication Date
WO2013043794A2 WO2013043794A2 (en) 2013-03-28
WO2013043794A3 true WO2013043794A3 (en) 2013-08-01

Family

ID=47003238

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2012/056216 Ceased WO2013043794A2 (en) 2011-09-22 2012-09-20 Liquid metal ion source, system and method

Country Status (1)

Country Link
WO (1) WO2013043794A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9530611B2 (en) 2013-07-08 2016-12-27 Carl Zeiss Microscopy, Llc Charged particle beam system and method of operating a charged particle beam system

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58142738A (en) * 1982-02-19 1983-08-24 Jeol Ltd Ion beam generator
JPS5937640A (en) * 1982-08-27 1984-03-01 Hitachi Ltd liquid metal ion source
JPS61138437A (en) * 1984-12-10 1986-06-25 Hitachi Ltd Field emission ion beam generator
EP0399374A1 (en) * 1989-05-26 1990-11-28 Micrion Corporation Ion source method and apparatus
JPH09283039A (en) * 1996-04-16 1997-10-31 Hitachi Ltd Focused ion beam equipment
JPH10208652A (en) * 1997-01-27 1998-08-07 Hitachi Ltd Ion current stabilization method and ion beam device using the same
JP2004014309A (en) * 2002-06-07 2004-01-15 Hitachi High-Technologies Corp Aperture and focused ion beam equipment

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58142738A (en) * 1982-02-19 1983-08-24 Jeol Ltd Ion beam generator
JPS5937640A (en) * 1982-08-27 1984-03-01 Hitachi Ltd liquid metal ion source
JPS61138437A (en) * 1984-12-10 1986-06-25 Hitachi Ltd Field emission ion beam generator
EP0399374A1 (en) * 1989-05-26 1990-11-28 Micrion Corporation Ion source method and apparatus
JPH09283039A (en) * 1996-04-16 1997-10-31 Hitachi Ltd Focused ion beam equipment
JPH10208652A (en) * 1997-01-27 1998-08-07 Hitachi Ltd Ion current stabilization method and ion beam device using the same
JP2004014309A (en) * 2002-06-07 2004-01-15 Hitachi High-Technologies Corp Aperture and focused ion beam equipment

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
GALOVICH C S ET AL: "A NEW METHOD FOR IMPROVING GALLIUM LIQUID METAL ION SOURCE STABILITY", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B, AVS / AIP, MELVILLE, NEW YORK, NY, US, vol. 6, no. 6, 1 November 1988 (1988-11-01), pages 2108 - 2111, XP000027560, ISSN: 1071-1023, DOI: 10.1116/1.584094 *

Also Published As

Publication number Publication date
WO2013043794A2 (en) 2013-03-28

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