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WO2012134070A3 - Appareil d'injection de gaz, appareil de dépôt de couche atomique, et méthode de dépôt de couche atomique utilisant l'appareil - Google Patents

Appareil d'injection de gaz, appareil de dépôt de couche atomique, et méthode de dépôt de couche atomique utilisant l'appareil Download PDF

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Publication number
WO2012134070A3
WO2012134070A3 PCT/KR2012/001659 KR2012001659W WO2012134070A3 WO 2012134070 A3 WO2012134070 A3 WO 2012134070A3 KR 2012001659 W KR2012001659 W KR 2012001659W WO 2012134070 A3 WO2012134070 A3 WO 2012134070A3
Authority
WO
WIPO (PCT)
Prior art keywords
gas
atomic layer
layer deposition
injection apparatus
injection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2012/001659
Other languages
English (en)
Korean (ko)
Other versions
WO2012134070A2 (fr
Inventor
전형탁
박태용
이재상
최동진
전희영
박진규
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Industry University Cooperation Foundation IUCF HYU
Original Assignee
Industry University Cooperation Foundation IUCF HYU
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Industry University Cooperation Foundation IUCF HYU filed Critical Industry University Cooperation Foundation IUCF HYU
Priority to CN201280016242.9A priority Critical patent/CN103649368B/zh
Publication of WO2012134070A2 publication Critical patent/WO2012134070A2/fr
Publication of WO2012134070A3 publication Critical patent/WO2012134070A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

La présente invention concerne un appareil d'injection de gaz, un appareil de dépôt de couche atomique, et une méthode de dépôt de couche atomique utilisant l'appareil. L'appareil d'injection de gaz est configuré sous la forme d'un seul tuyau. Le gaz est introduit dans un substrat par la partie centrale de l'appareil d'injection de gaz, et simultanément le gaz fourni par les trous d'admission de gaz formés dans des parties spécifiques le long de la surface extérieure du tuyau d'alimentation en gaz est aspiré. De ce fait, lorsque l'appareil d'injection de gaz est placé à proximité du substrat, l'alimentation et l'aspiration du gaz peuvent être réalisées en même temps. Là, comme le processus de dépôt est effectué à une pression normale, il n'est pas nécessaire de fournir un appareil supplémentaire et de réserver une période pour produire du vide. Et comme on peut effectuer des processus consécutifs, on peut effectuer des pré- et post-traitements ensemble et en même temps. De plus, on peut utiliser une pluralité d'appareils sources d'injection pour former un composé à plusieurs composants. Dans ce cas, le type de source de chaleur et d'énergie thermique fournie peut être adapté individuellement à la température de décomposition de chaque source.
PCT/KR2012/001659 2011-03-31 2012-03-07 Appareil d'injection de gaz, appareil de dépôt de couche atomique, et méthode de dépôt de couche atomique utilisant l'appareil Ceased WO2012134070A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201280016242.9A CN103649368B (zh) 2011-03-31 2012-03-07 气体喷注装置、原子层沉积装置以及使用该原子层沉积装置的原子层沉积方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0029416 2011-03-31
KR1020110029416A KR101311983B1 (ko) 2011-03-31 2011-03-31 가스 주입 장치, 원자층 증착장치 및 이 장치를 이용한 원자층 증착방법

Publications (2)

Publication Number Publication Date
WO2012134070A2 WO2012134070A2 (fr) 2012-10-04
WO2012134070A3 true WO2012134070A3 (fr) 2012-11-29

Family

ID=46932043

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/001659 Ceased WO2012134070A2 (fr) 2011-03-31 2012-03-07 Appareil d'injection de gaz, appareil de dépôt de couche atomique, et méthode de dépôt de couche atomique utilisant l'appareil

Country Status (3)

Country Link
KR (1) KR101311983B1 (fr)
CN (1) CN103649368B (fr)
WO (1) WO2012134070A2 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101538372B1 (ko) * 2012-12-13 2015-07-22 엘아이지인베니아 주식회사 원자층 증착장치
KR101541154B1 (ko) * 2012-12-13 2015-08-03 엘아이지인베니아 주식회사 원자층 증착장치
KR101541155B1 (ko) * 2012-12-13 2015-08-06 엘아이지인베니아 주식회사 원자층 증착장치
KR101407068B1 (ko) * 2013-01-14 2014-06-13 한양대학교 산학협력단 고속 원거리 플라즈마 원자층 증착장치
KR101557483B1 (ko) * 2014-02-10 2015-10-07 엘아이지인베니아 주식회사 원자층 증착장치
KR20160072630A (ko) 2014-12-15 2016-06-23 인베니아 주식회사 원자층 증착장치
KR102007866B1 (ko) * 2015-05-07 2019-08-06 에이피시스템 주식회사 원자층 증착 장치 및 이를 이용한 원자층 증착 방법
KR101715223B1 (ko) * 2015-05-15 2017-03-14 고려대학교 산학협력단 국부 원자층 선택 박막 증착 장치

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0927482A (ja) * 1995-07-11 1997-01-28 Speedfam Co Ltd プラズマエッチング装置
US6022414A (en) * 1994-07-18 2000-02-08 Semiconductor Equipment Group, Llc Single body injector and method for delivering gases to a surface
JP2001230211A (ja) * 2000-02-17 2001-08-24 Sharp Corp 成膜装置
US20040035358A1 (en) * 2002-08-23 2004-02-26 Cem Basceri Reactors having gas distributors and methods for depositing materials onto micro-device workpieces
KR100805345B1 (ko) * 2006-11-10 2008-02-20 주식회사 비아트론 상압 금속도핑장치
JP2010092952A (ja) * 2008-10-06 2010-04-22 Ihi Corp 白色ｌｅｄの製造装置と方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4908738B2 (ja) * 2002-01-17 2012-04-04 サンデュー・テクノロジーズ・エルエルシー Ａｌｄ方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6022414A (en) * 1994-07-18 2000-02-08 Semiconductor Equipment Group, Llc Single body injector and method for delivering gases to a surface
JPH0927482A (ja) * 1995-07-11 1997-01-28 Speedfam Co Ltd プラズマエッチング装置
JP2001230211A (ja) * 2000-02-17 2001-08-24 Sharp Corp 成膜装置
US20040035358A1 (en) * 2002-08-23 2004-02-26 Cem Basceri Reactors having gas distributors and methods for depositing materials onto micro-device workpieces
KR100805345B1 (ko) * 2006-11-10 2008-02-20 주식회사 비아트론 상압 금속도핑장치
JP2010092952A (ja) * 2008-10-06 2010-04-22 Ihi Corp 白色ｌｅｄの製造装置と方法

Also Published As

Publication number Publication date
WO2012134070A2 (fr) 2012-10-04
KR20120111108A (ko) 2012-10-10
KR101311983B1 (ko) 2013-09-30
CN103649368A (zh) 2014-03-19
CN103649368B (zh) 2016-03-02

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