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WO2012120891A1 - Élément électroluminescent à longueurs d'ondes multiples, et procédé de fabrication associé - Google Patents

Élément électroluminescent à longueurs d'ondes multiples, et procédé de fabrication associé Download PDF

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Publication number
WO2012120891A1
WO2012120891A1 PCT/JP2012/001607 JP2012001607W WO2012120891A1 WO 2012120891 A1 WO2012120891 A1 WO 2012120891A1 JP 2012001607 W JP2012001607 W JP 2012001607W WO 2012120891 A1 WO2012120891 A1 WO 2012120891A1
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semiconductor
light emitting
crystal growth
layer
substrate
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Japanese (ja)
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只友　一行
成仁 岡田
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Yamaguchi University NUC
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Yamaguchi University NUC
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

Definitions

  • the present invention relates to a multi-wavelength light emitting device and a method for manufacturing the same.
  • Patent Document 1 At least one light emitting diode portion made of a GaP-based, AlGaAs-based, or AlGaInP-based compound semiconductor is stacked on the same substrate, and light emission made of a GaN-based compound semiconductor is formed on the light-emitting diode portion.
  • a multi-wavelength light emitting element in which one or more diode portions are stacked is disclosed.
  • Patent Document 2 At least two types of semiconductor light emitting elements are formed on one substrate material, and a plurality of types of phosphors that react to the emission wavelength of each element are applied on each semiconductor light emitting element, A multi-wavelength light-emitting device that emits visible light having a wide range of emission wavelengths by simultaneously emitting the semiconductor light-emitting elements is disclosed.
  • the multi-wavelength light emitting device of the present invention is A substrate having first and second crystal growth planes having different plane orientations on the surface, and first and second light emitting regions corresponding to the first and second crystal growth planes; A first semiconductor layer provided to be stacked on the first light emitting region on the substrate and formed by crystal growth of a semiconductor from the first crystal growth surface; A first semiconductor light emitting layer configured to be laminated on the first semiconductor layer and emitting light of a predetermined wavelength formed by crystal growth of a semiconductor; A crystal plane different from the main surface of the first semiconductor layer, which is provided so as to be stacked on the second light emitting region on the substrate and is formed by crystal growth of a semiconductor starting from the second crystal growth plane.
  • a second semiconductor layer as a main surface;
  • a semiconductor having the same constituent element as that of the semiconductor forming the first semiconductor light emitting layer and having a different element composition ratio is formed by crystal growth and / or formed on the second semiconductor layer; and / or The wavelength of light emitted from the first semiconductor light-emitting layer, which is formed by crystal growth of a semiconductor having the same constituent element as the semiconductor forming the first semiconductor light-emitting layer and has a layer thickness different from that of the first semiconductor light-emitting layer
  • a second semiconductor light emitting layer that emits light of a different wavelength from Is provided.
  • the method for producing the multi-wavelength light emitting device of the present invention includes: Preparing a substrate having first and second crystal growth surfaces having different plane orientations on the surface; A first semiconductor layer that forms a first light emitting region on the substrate to form a first semiconductor layer by crystal growth of the semiconductor starting from the first crystal growth surface of the substrate prepared in the preparation step Forming process; Different from the main surface of the first semiconductor layer so that the second light emitting region is formed and stacked on the substrate by crystal growth of the semiconductor starting from the second crystal growth surface of the substrate prepared in the preparation step.
  • a semiconductor having the same constituent element as that of the semiconductor forming the first semiconductor light emitting layer and having a different element composition ratio is crystal-grown so as to be stacked on the second semiconductor layer formed in the process and / or the first semiconductor layer is formed.
  • a semiconductor having the same constituent elements as the semiconductor forming the semiconductor light emitting layer is crystal-grown so as to have a layer thickness different from that of the first semiconductor light emitting layer, so that the wavelength of light emitted by the first semiconductor light emitting layer is different.
  • FIG. 3 is a sectional view taken along line III-III in FIG. 1.
  • A)-(d) is sectional drawing of the specific example of a board
  • A)-(f) is explanatory drawing of the manufacturing method of the multiwavelength light emitting element which concerns on embodiment.
  • Multi-wavelength light emitting device 1 to 3 show a multi-wavelength light emitting device 100 according to this embodiment.
  • the multi-wavelength light emitting device 100 includes a substrate 110 serving as a base.
  • the substrate 110 examples include a sapphire substrate and a SiC substrate. Of these, a sapphire substrate which is a single crystal substrate having an Al 2 O 3 corundum structure is preferable from the viewpoint of versatility.
  • the main surface of the substrate 110 (the surface perpendicular to the thickness direction of the substrate) is the a-plane ⁇ 11-20 ⁇ plane> in which the normal direction is the a-axis, and the normal direction is the c-axis.
  • the main surface of the substrate 110 may be a miscut surface in which the a-axis or the like is inclined at a predetermined angle (for example, 45 °, 60 °, or a slight angle within several degrees) with respect to the normal direction of the main surface. Good. That is, the substrate 110 may be a miscut substrate.
  • the plane directions of the a-plane, c-plane, and m-plane are orthogonal to each other.
  • the substrate 110 has first to third crystal growth surfaces 121 to 123 having different surface orientations on the surface, and the first to third crystal growth surfaces 121 to 123 corresponding to the first to third crystal growth surfaces 121 to 123, respectively.
  • Light emitting areas A1 to A3 are configured.
  • the substrate 110 has only first and second crystal growth surfaces 121 and 122 having different surface orientations on the surface, and the first and second crystal growth surfaces 121 and 122 corresponding to the first and second crystal growth surfaces 121 and 122 are provided.
  • Two light emitting areas A1 and A2 may be configured.
  • the substrate 110 has a crystal growth surface having a surface orientation different from that of the first to third crystal growth surfaces 121 to 123 on the surface, and one or a plurality of light emitting regions corresponding to the crystal growth surface. Also good. That is, more than three light emitting regions may be configured.
  • the first to third crystal growth surfaces 121 to 123 are angled (typically, the main surface of the substrate 110, one side surface of the first groove 111 formed in the substrate 110, and the direction in which the first groove 111 extends) 90 °) and extending from one side surface of the second concave groove 112.
  • the first and second concave grooves 111 and 112 may be U-shaped grooves, V-shaped grooves, or trapezoidal grooves as long as they have side surfaces.
  • the first and second concave grooves 111 and 112 have, for example, a groove opening width of 0.5 to 10 ⁇ m, a groove depth of 0.75 to 100 ⁇ m, and an angle of 70 to 120 ° with respect to the main surface of the groove side surface. It is.
  • first and second concave grooves 111 and 112 Only one of the first and second concave grooves 111 and 112 may be formed, or a plurality of the first and second concave grooves 111 and 112 may be formed to extend in parallel with an interval between each other. In the latter case, the groove interval is, for example, 1 to 100 ⁇ m.
  • the first to third crystal growth surfaces 121 to 123 may be configured by other concave side surfaces or convex or convex side surfaces.
  • the first crystal growth surface 121 is a main surface of the substrate 110 and the second crystal growth surface 122 is as shown in FIG.
  • One side surface of the first groove 111 that is a trapezoidal groove extending in the m-axis direction and the second groove 112 that is a trapezoidal groove in which the third crystal growth surface 123 extends in the c-axis direction perpendicular to the first groove 111.
  • the first crystal growth surface 121 is a c-plane which is the main surface of the substrate 110
  • the second crystal growth surface 122 is a trapezoid extending in the m-axis direction.
  • first concave groove 111 that is a groove and one side surface of the second concave groove 112 that is a trapezoidal groove in which the third crystal growth surface 123 extends in the a-axis direction perpendicular to the first concave groove 111.
  • first crystal growth surface 121 is the main surface of the substrate 110.
  • the second crystal growth surface 122 is a trapezoidal groove extending in the direction orthogonal to the first concave groove 111, and one side surface of the first concave groove 111, which is a trapezoidal groove extending in the a-axis direction.
  • the 4th structure which is one side surface of the 2nd ditch
  • the multi-wavelength light emitting device 100 includes first to third u ⁇ semiconductor layers 131 to 133 provided to be stacked in the first to third light emitting regions A1 to A3 on the substrate 110. .
  • These first to third u ⁇ semiconductor layers 131 to 133 are formed by crystal growth of undoped semiconductors starting from the first to third crystal growth surfaces 121 to 123, respectively.
  • Examples of the semiconductor forming the first to third u-semiconductor layers 131 to 133 include GaN, InGaN, and AlGaN.
  • the first to third u ⁇ semiconductor layers 131 to 133 may be formed of the same semiconductor or may include different semiconductors.
  • the thickness of the first to third u ⁇ semiconductor layers 131 to 133 is, for example, 2 to 100 ⁇ m.
  • the first u-semiconductor layer 131 may have a crystal plane that is the same as the crystal plane of the main surface of the substrate 110, or a crystal plane that is different from the crystal plane of the main surface of the substrate 110 as a main surface.
  • the second u ⁇ semiconductor layer 132 has a crystal plane different from the main surface of the first semiconductor layer as the main surface.
  • the third u ⁇ semiconductor layer 133 has a crystal plane different from the main surfaces of the first and second semiconductor layers as a main surface.
  • the semiconductor forming the first to third u ⁇ semiconductor layers 131 to 133 is GaN
  • the substrate that is the first crystal growth surface 121 The undoped GaN crystal grows starting from the a-plane of the main surface of 110, and the first u-semiconductor layer 131 has the c-plane as the main surface, and the extending direction of the first groove 111 is the a-axis direction, and The first u-GaN layer 131 in which the extending direction of the second groove 112 is the m-axis direction is formed, and undoped GaN is formed from one side surface of the first groove 111 that is the second crystal growth surface 122.
  • the crystal grows, and the second u ⁇ semiconductor layer 132 has an m-plane as a main surface, the extending direction of the first groove 111 is the a-axis direction, and the extending direction of the second groove 112 is the c-axis direction.
  • a second u-GaN layer 132 is formed;
  • the undoped GaN crystal grows from one side surface of the second groove 112, which is the third crystal growth surface 123, as a starting point, and as the third u-semiconductor layer 133, the a-plane is the main surface, and the first groove 111
  • a third u-GaN layer 133 is formed in which the extending direction is the m-axis direction and the extending direction of the second groove 112 is the c-axis direction.
  • undoped GaN grows from the c-plane of the main surface of the substrate 110, which is the first crystal growth surface 121, to form the first u-semiconductor layer 131.
  • the c-plane (or m-plane) is the main surface
  • the extending direction of the first groove 111 is the a-axis direction
  • the extending direction of the second groove 112 is the m-axis (or c-axis) direction.
  • the 1u-GaN layer 131 is formed, and undoped GaN grows from one side surface of the first concave groove 111 which is the second crystal growth surface 122, and the m-plane is formed as the second u-semiconductor layer 132.
  • a second u-GaN layer 132 is formed which has a main surface, the first groove 111 extends in the a-axis direction, and the second groove 112 extends in the c-axis direction.
  • One side surface of the second concave groove 112 that is the growth surface 123 is raised.
  • Undoped GaN grows as a point, and the third u-GaN layer 133 has a c-plane as a main surface, the extending direction of the first groove 111 is the m-axis direction, and the extending direction of the second groove 112 A third u-GaN layer 133 is formed in the direction of the a-axis.
  • undoped GaN grows from the n-plane of the main surface of the substrate 110, which is the first crystal growth surface 121, to form the first u-semiconductor layer 131.
  • a first u-GaN layer 131 having a c-plane as a main surface, the first groove 111 extending in the a-axis direction, and the second groove 112 extending in the m-axis direction is formed.
  • the undoped GaN crystal grows starting from one side surface of the first groove 111 which is the second crystal growth surface 122, and the semipolar ⁇ 0-101 ⁇ surface is the main surface as the second u-semiconductor layer 132.
  • a second u-GaN layer 132 is formed in which the extending direction of the first concave groove 111 is the a-axis direction and the extending direction of the second concave groove 112 is an intermediate direction between the c-axis and the m-axis,
  • One of the second concave grooves 112 that is the third crystal growth surface 123 The undoped GaN crystal grows starting from the side surface of the first, and the third u-semiconductor layer 133 has a crystal plane intermediate between the a-plane and the c-plane as the main plane, and the extending direction of the first groove 111 is the m-axis.
  • the third u-GaN layer 133 is formed in which the second groove 112 extends in the direction between the a axis and the c axis.
  • undoped GaN crystal grows from the r-plane of the main surface of the substrate 110 which is the first crystal growth surface 121, and the first u ⁇ semiconductor layer 131 is formed.
  • a first u-GaN layer 131 is formed in which the a-plane is the main surface, the extending direction of the first groove 111 is the m-axis direction, and the extending direction of the second groove 112 is the c-axis direction.
  • the undoped GaN crystal grows from one side surface of the first concave groove 111 which is the second crystal growth surface 122 as a starting point, and the ⁇ 11-22 ⁇ plane is the main surface as the second u-semiconductor layer 132;
  • a second u-GaN layer 132 is formed in which the direction in which the first groove 111 extends is the m-axis direction and the direction in which the second groove 112 extends is an intermediate direction between the a-axis and the c-axis.
  • One side surface of the second concave groove 112 which is the crystal growth surface 123
  • the undoped GaN crystal grows, and the m-plane is the main surface
  • the first groove 111 extends in the c-axis direction
  • the second groove 112 extends.
  • a third u-GaN layer 133 whose direction is the a-axis direction is formed.
  • a low-temperature buffer layer having a thickness of about 20 to 30 nm may be provided between the substrate 110 and the first to third u ⁇ semiconductor layers 131 to 133.
  • the heights of the first to third u-semiconductor layers 131 to 133 configured as described above are not uniform because of difficulty in crystal growth. In that case, the heights may be uniformed by polishing or the like. .
  • the multi-wavelength light emitting device 100 includes first to third n-type semiconductor layers 141 to 143 provided to be stacked on the first to third u ⁇ semiconductor layers 131 to 133. These first to third n-type semiconductor layers 141 to 143 are formed by epitaxially growing a semiconductor doped with an n-type dopant starting from the main surface of the first to third u-semiconductor layers 131 to 133, respectively. It is a thing. Therefore, the first to third n-type semiconductor layers 141 to 143 have the same crystal plane as the main surface of the first to third u ⁇ semiconductor layers 131 to 133 as the main surface.
  • Examples of the semiconductor constituting the first to third n-type semiconductor layers 141 to 143 include GaN, InGaN, and AlGaN.
  • the first to third n-type semiconductor layers 141 to 143 may be composed of the same semiconductor, or may be composed of different semiconductors.
  • Examples of the n-type dopant contained in the first to third n-type semiconductor layers 141 to 143 include Si, Ge, and the like.
  • the concentration of the n-type dopant is, for example, 1.0 ⁇ 10 17 to 20 ⁇ 10 17 / cm 3 .
  • the multi-wavelength light emitting device 100 includes first to third light emitting layers 151 to 153 provided to be stacked on the first to third n-type semiconductor layers 141 to 143. These first to third light emitting layers 151 to 153 are formed by epitaxially growing a semiconductor from the main surface of the first to third n-type semiconductor layers 141 to 143, respectively. Accordingly, the first to third light-emitting layers 151 to 153 have the same crystal plane as the main surface of the first to third n-type semiconductor layers 141 to 143 and the first to third u ⁇ semiconductor layers 131 to 133. .
  • the first to third light emitting layers 151 to 153 have an alternately stacked structure of first to third well layers (first to third semiconductor light emitting layers) 151a to 153a and first to third barrier layers 151b to 153b. It is composed of multiple quantum well layers.
  • the number of first to third well layers 151a to 153a and the first to third barrier layers 151b to 153b is, for example, 5 to 15.
  • Examples of the semiconductor forming the first to third well layers 151a to 153a include InGaN and InGaAlN.
  • the thicknesses of the first to third well layers 151a to 153a are, for example, 1 to 20 nm.
  • the efficiency of incorporation of InN into the layer is different, so that the elemental composition ratios are different from each other. Therefore, and / or the layer thicknesses are different from each other, and as a result, they are configured to emit light having different wavelengths.
  • the first to third light emitting layers 151 to 153 may be configured to emit R (red), G (green), and (blue) light, for example.
  • a one-chip white light emitting element (white LED) can be configured.
  • the multi-wavelength light emitting device 100 includes first to third p-type semiconductor layers 161 to 163 provided so as to be stacked on the first to third light emitting layers 151 to 153.
  • Examples of the semiconductor constituting the first to third p-type semiconductor layers 161 to 163 include GaN, InGaN, and AlGaN.
  • the first to third p-type semiconductor layers 161 to 163 may be composed of the same semiconductor, or may be composed of different semiconductors.
  • Examples of the p-type dopant contained in the first to third p-type semiconductor layers 161 to 163 include Mg and Cd.
  • the free hole concentration measured by the Hall effect measurement is, for example, 2.0 ⁇ 10 17 to 10 ⁇ 10 17 / cm 3 .
  • the first to third p-type semiconductor layers 161 to 163 may be composed of a single layer, or may be composed of a plurality of layers having different types and concentrations of the p-type dopant.
  • the thickness of the first to third p-type semiconductor layers 161 to 163 is, for example, 50 to 200 nm.
  • the multi-wavelength light emitting device 100 includes first to third n-type electrodes 171 to 173 provided so as to be electrically connected to the first to third n-type semiconductor layers 141 to 143, and the first to third n-type electrodes.
  • First to third p-type electrodes 181 to 183 are provided so as to be electrically connected to the 3p-type semiconductor layers 161 to 163.
  • Examples of the constituent electrode material of the first to third n-type electrodes 171 to 173 include a laminated structure such as Ti / Al, Ti / Al / Mo / Au, Hf / Au, or an alloy.
  • the thickness of the first to third n-type electrodes 171 to 173 is, for example, Ti / Al (10 nm / 500 nm).
  • Examples of the first to third p-type electrodes 181 to 183 include a laminated structure such as Pd / Pt / Au, Ni / Au, Pd / Mo / Au, an alloy, or an oxide such as ITO (indium tin oxide). System transparent conductive material.
  • a pad electrode for wire bonding is required on the first to third p-type electrodes 181 to 183, and in many cases, the same material system as that of the first to third n-type electrodes 171 to 173 is used.
  • the thickness of the first to third p-type electrodes 181 to 183 is, for example, 10 to 200 nm in the case of ITO.
  • the first to third u-GaN layers as the first to third u-semiconductor layers 131 to 133 are formed on the wafer 110 ′ (substrate 110).
  • first to third n-type electrodes 171 to 173 and the first to third p-type electrodes 181 to 183 are formed on the 3n-type GaN layers 141 to 143 and the first to third p-type GaN layers 161 to 163, respectively.
  • each multi-wavelength light emitting element 100 on the wafer 110 ′ As shown in FIG. 5A, the photoresist patterning is formed so that only the groove formation planned portion becomes an opening. As shown in FIG. 2B, the photoresist 200 is etched using the photoresist 200 as an etching resist to form the first and second concave grooves 111 and 112 on the surface of the wafer 110 ′, and then the photoresist 200 is removed.
  • the main surface of the substrate 110 and the second crystal growth surface 122 are the first crystal growth surfaces 121 having different plane orientations on the surface.
  • One side surface of the first concave groove 111 and one side surface of the second concave groove 112 that is the third crystal growth surface 123 are exposed.
  • each semiconductor layer includes metal organic vapor phase epitaxy (MOVPE), molecular beam epitaxy (MBE), hydride vapor phase epitaxy (Hyride Vapor Phase Epitaxy). HVPE) and the like, and among these, metalorganic vapor phase epitaxy is the most common. Below, the formation method of each semiconductor layer using a metal organic chemical vapor deposition method is demonstrated.
  • the MOVPE apparatus used for forming each semiconductor layer is composed of a wafer transfer system, a wafer heating system, a gas supply system, and a gas exhaust system that are electronically controlled.
  • the wafer heating system is composed of a thermocouple, a resistance heater, and a carbon or SiC susceptor provided thereon.
  • the MOVPE apparatus is configured so that a semiconductor layer is crystal-grown by a reactive gas on a wafer 110 'set on a susceptor of a quartz tray to be conveyed in a wafer heating system.
  • the wafer 110 ′ having the first and second concave grooves 111 and 112 formed on the surface is set on a quartz tray so that the surface faces upward, and then the wafer 110 ′ is 1050 to 1150 ° C.
  • the pressure in the reaction vessel is set to 10 to 100 kPa, and H 2 is circulated as a carrier gas in a flow channel installed in the reaction vessel, and this state is maintained for several minutes to thermally Clean it.
  • the temperature of the wafer 110 ′ is set to 1050 to 1150 ° C.
  • the pressure in the reaction vessel is set to 10 to 100 kPa
  • the carrier gas H 2 is circulated in the reaction vessel at a flow rate of about 10 L / min.
  • a group V element supply source (NH 3 ) and a group III element supply source (TMG) are supplied so that the respective supply flow rates are 0.1 to 5 L / min and 50 to 150 ⁇ mol / min.
  • the crystal growth condition is selected so that the undoped GaN is stacked on the substrate 110 starting from the main surface of the substrate 110 which is the first crystal growth surface 121.
  • the first u-GaN layer 131 is grown to form the first light emitting region A1.
  • the second u-GaN layer 132 is formed by crystal growth so that undoped GaN is stacked on the substrate 110 starting from one side surface of the first concave groove 111 that is the second crystal growth surface 122.
  • the second light emitting area A2 is configured.
  • the third u-GaN layer 133 is formed by crystal growth so that undoped GaN is stacked on the substrate 110 starting from one side surface of the second concave groove 112 which is the third crystal growth surface 123. Constitutes the third light emitting region A3.
  • the first to third u-GaN layers 131 to 133 are formed by crystal growth starting from the first to third crystal growth surfaces 121 to 123, respectively, so that they have main surfaces with different plane orientations. .
  • the first to third u-GaN layers 131 to 133 may be formed by individually growing a crystal by selecting a crystal growth condition or by masking a portion where the crystal is not grown. Depending on selection, two or all of the first to third u-GaN layers 131 to 133 may be formed by crystal growth at the same time.
  • the temperature of the wafer 110 ' may be set to 400 to 500 ° C., and GaN may be grown. Further, a mask may be provided in a portion other than the first to third light emitting regions A1 to A3 in the wafer 110 '.
  • the pressure in the reaction vessel is 10 to 100 kPa, and the carrier gas H 2 is 5 to 15 L / min in the reaction vessel (hereinafter, the gas flow rate is a value in a standard state (0 ° C., 1 atm)).
  • a group V element supply source NH 3
  • TMG group III element supply source 1
  • SiH 4 n-type doping element supply source
  • GaN doped with Si as the n-type dopant starts from the main surface of the first to third u-GaN layers 131 to 133 by selecting the crystal growth conditions.
  • the first to third n-type GaN layers 141 to 143 are formed by epitaxial crystal growth so as to be stacked on the first to third u-GaN layers 131 to 133. Accordingly, the first to third n-type GaN layers 141 to 143 also have principal surfaces with different plane orientations, like the first to third u-GaN layers 131 to 133.
  • the first to third n-type GaN layers 141 to 143 may be formed by crystal growth individually by selecting crystal growth conditions or by masking a portion where crystal growth is not performed. Depending on selection, two or all of the first to third n-type GaN layers 141 to 143 may be formed by crystal growth at the same time.
  • the temperature of the wafer 110 ′ is set to about 800 ° C.
  • the pressure in the reaction vessel is set to 10 to 100 kPa
  • the carrier gas N 2 is circulated in the reaction vessel at a flow rate of 5 to 15 L / min
  • group V element supply source (NH 3 ), group III element supply source 1 (TMG), and group III element supply source 2 (TMI) the respective supply flow rates are 0.1 to 5 L / min, 5 to 15 ⁇ mol. / Min, and 2-30 ⁇ mol / min.
  • epitaxial crystals are grown so that InGaN is stacked on the first to third n-type GaN layers 141 to 143, starting from the main surfaces of the first to third n-type GaN layers 141 to 143.
  • the first to third well layers 151a to 153a are formed simultaneously.
  • a group V element supply source (NH 3 ) and a group III element supply source (TMG) are flowed so that the respective supply flow rates are 0.1 to 5 L / min and 5 to 15 ⁇ mol / min.
  • the first to third well layers 151a to 153a are used as the starting points to grow epitaxial crystals so that GaN is stacked on the first to third well layers 151a to 153a.
  • the first to third barrier layers 151b to 153b are formed at the same time.
  • first to third well layers 151a to 153a and the first to third barrier layers 151b to 153b are alternately stacked as shown in FIG. 5 (e).
  • First to third light emitting layers 151 to 153 of the formed multiple quantum well layers are formed.
  • the first to third n-type semiconductor layers 141 to 143 whose main surfaces are different crystal planes of the first to third light emitting layers 151 to 153, and accordingly, the first to third u ⁇ semiconductor layers 131 to 133 are formed. Since the same crystal plane as the main surface is used as the main surface, the efficiency of incorporation of InN into the first to third well layers 151a to 153a in the first to third light emitting layers 151 to 153 is different.
  • the elemental composition ratios are different from each other and / or the layer thicknesses are different from each other. As a result, the first to third light emitting layers 151 to 153 are configured to emit light having different wavelengths.
  • the emission wavelengths of the first to third light emitting layers 151 to 153 depend on the well width (thickness) and the InN mixed crystal ratio of the first to third well layers 151a to 153a, but the higher the InN mixed crystal ratio, the higher the InN mixed crystal ratio.
  • the emission wavelength is a long wavelength.
  • the InN mixed crystal ratio is determined by the TMI molar flow rate / (TMG molar flow rate + TMI molar flow rate) and the growth temperature.
  • the semiconductor is formed by crystal growth from the first to third crystal growth surfaces 121 to 123 having different plane orientations.
  • the same constituent elements and semiconductors having different element composition ratios may be grown and / or the same.
  • the first to third well layers 151a to 153a having different emission wavelengths can be formed even if the semiconductors of the constituent elements are grown with different layer thicknesses, the first to third semiconductor light emitting layers 151 to 153 are formed. Therefore, the multi-wavelength light emitting device 100 can be efficiently manufactured.
  • the temperature of the wafer 110 ′ is set to 1000 to 1100 ° C.
  • the pressure in the reaction vessel is set to 10 to 100 kPa
  • the carrier gas H 2 is passed through the reaction vessel at a flow rate of 5 to 15 L / min.
  • a group V element supply source (NH 3 ), a group III element supply source 1 (TMG), a group III element supply source 3 (TMA), and a p-type doping element supply source (Cp 2 Mg) are respectively used.
  • the supply flow rate is 0.1-5 L / min, 50-150 ⁇ mol / min, 2-80 ⁇ mol / min, and 0.03-30 ⁇ mol / min.
  • GaN doped with Mg as the p-type dopant starts from the main surfaces of the first to third light emitting layers 151 to 153.
  • the first to third p-type GaN layers 161 to 163 are formed by crystal growth so as to be stacked on the first to third light emitting layers 151 to 153.
  • ⁇ N-type electrode and p-type electrode formation step> After the first to third n-type GaN layers 141 to 143 are exposed by partially reactive ion etching of the semiconductor layer formed on the wafer 110 ′, vacuum deposition, sputtering, CVD (Chemical Vapor Deposition), etc.
  • the first to third n-type electrodes 171 to 173 on the first to third n-type GaN layers 141 to 143 and the first to third p-type electrodes 181 to 183 on the first to third p-type GaN layers 161 to 163 by the above method. Respectively.
  • the wafer 110 ′ is cleaved individually to produce the multi-wavelength light emitting device 100 according to this embodiment.
  • the present invention is useful for a multi-wavelength light emitting device and a method for manufacturing the same.

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Abstract

La présente invention concerne un élément électroluminescent à longueurs d'ondes multiples (100), comprenant : une première couche électroluminescente semi-conductrice (151), qui est formée par dépôt d'un cristal semi-conducteur sur une première couche semi-conductrice (131) formée sur un substrat (110) ; et une seconde couche électroluminescente semi-conductrice (152), qui est formée par dépôt d'un cristal semi-conducteur sur une seconde couche semi-conductrice (132) formée sur le substrat (110), et qui émet de la lumière avec une longueur d'onde différente de la longueur d'onde de la lumière émise par la première couche électroluminescente semi-conductrice (151).
PCT/JP2012/001607 2011-03-10 2012-03-08 Élément électroluminescent à longueurs d'ondes multiples, et procédé de fabrication associé Ceased WO2012120891A1 (fr)

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CN110249435A (zh) * 2017-03-07 2019-09-17 信越半导体株式会社 发光元件及其制造方法
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WO2021140910A1 (fr) * 2020-01-07 2021-07-15 ソニーグループ株式会社 Source de lumière à longueurs d'onde multiples, procédé de production de source de lumière à longueurs d'onde multiples et dispositif d'affichage
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CN107894679A (zh) * 2017-12-29 2018-04-10 西安智盛锐芯半导体科技有限公司 背光模组及液晶显示装置
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CN110689814B (zh) * 2018-07-05 2022-04-01 江西兆驰半导体有限公司 一种多色化微型led阵列及其制作方法
WO2021140910A1 (fr) * 2020-01-07 2021-07-15 ソニーグループ株式会社 Source de lumière à longueurs d'onde multiples, procédé de production de source de lumière à longueurs d'onde multiples et dispositif d'affichage
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