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WO2012108618A3 - 마이크로 웨이브를 이용한 단결정 성장장치 및 그 성장방법 - Google Patents

마이크로 웨이브를 이용한 단결정 성장장치 및 그 성장방법 Download PDF

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Publication number
WO2012108618A3
WO2012108618A3 PCT/KR2011/009507 KR2011009507W WO2012108618A3 WO 2012108618 A3 WO2012108618 A3 WO 2012108618A3 KR 2011009507 W KR2011009507 W KR 2011009507W WO 2012108618 A3 WO2012108618 A3 WO 2012108618A3
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WO
WIPO (PCT)
Prior art keywords
crucible
microwaves
single crystal
heating unit
growth furnace
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2011/009507
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English (en)
French (fr)
Other versions
WO2012108618A2 (ko
Inventor
김병관
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UNID CO Ltd
Original Assignee
UNID CO Ltd
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Filing date
Publication date
Application filed by UNID CO Ltd filed Critical UNID CO Ltd
Publication of WO2012108618A2 publication Critical patent/WO2012108618A2/ko
Publication of WO2012108618A3 publication Critical patent/WO2012108618A3/ko
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

본 발명의 단결정 성장장치의 하나의 예시는, 내부에 단열 펠트를 구성하는 성장로; 상기 단열 펠트의 내부에 설치되며, 시드 결정이 위치하고 단결정 원료를 수용하는 도가니; 상기 도가니의 외측에 구성되며, 상기 도가니로 열을 제공하는 메인 히팅유닛; 상기 성장로에 장착되며, 상기 히팅유닛과 상기 도가니 내 상기 단결정 원료를 마이크로 웨이브로서 가열하는 보조 히팅유닛; 상기 도가니의 하측에 구성되며, 상기 도가니와 열교환이 이루어지는 열교환부; 및 상기 성장로의 외벽에 설치되는 냉각 챔버를 구비하며, 상기 냉각 챔버로 냉매를 공급하는 쿨링유닛;을 포함한다.
PCT/KR2011/009507 2011-02-09 2011-12-09 마이크로 웨이브를 이용한 단결정 성장장치 및 그 성장방법 Ceased WO2012108618A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0011423 2011-02-09
KR1020110011423A KR101299037B1 (ko) 2011-02-09 2011-02-09 마이크로 웨이브를 이용한 단결정 성장장치 및 그 성장방법

Publications (2)

Publication Number Publication Date
WO2012108618A2 WO2012108618A2 (ko) 2012-08-16
WO2012108618A3 true WO2012108618A3 (ko) 2012-10-04

Family

ID=46639014

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/009507 Ceased WO2012108618A2 (ko) 2011-02-09 2011-12-09 마이크로 웨이브를 이용한 단결정 성장장치 및 그 성장방법

Country Status (2)

Country Link
KR (1) KR101299037B1 (ko)
WO (1) WO2012108618A2 (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101464561B1 (ko) * 2013-01-17 2014-12-01 주식회사 엘지실트론 사파이어 잉곳 성장장치 및 이에 이용되는 로드 히터
KR101654423B1 (ko) * 2014-10-13 2016-09-07 한국생산기술연구원 분리형 씨드 투입 방법
CN105648530A (zh) * 2016-04-19 2016-06-08 黄山市东晶光电科技有限公司 一种可在线更换籽晶的泡生法蓝宝石晶体生长炉
CN105862121A (zh) * 2016-04-19 2016-08-17 黄山市东晶光电科技有限公司 一种可在线更换籽晶的方法
KR102129871B1 (ko) * 2018-07-16 2020-07-03 엔티씨 주식회사 연속식 진공 용해로
CN110760929B (zh) * 2019-12-02 2024-08-16 大连威凯特科技有限公司 直拉式单晶硅棒的生产设备
CN120060685B (zh) * 2025-04-27 2025-07-11 湖南维特精密机械有限公司 一种铜钨复合材料的制备方法及铜钨复合材料

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1053485A (ja) * 1996-08-07 1998-02-24 Sumitomo Sitix Corp 電子ビーム溶解による単結晶引き上げ方法
JPH11255593A (ja) * 1998-03-12 1999-09-21 Super Silicon Kenkyusho:Kk 原料溶解補助装置
KR20100042506A (ko) * 2008-10-16 2010-04-26 주식회사 엔씨비네트웍스 정제 기능을 가지는 실리콘 잉곳 제조장치

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4513798B2 (ja) * 2006-10-24 2010-07-28 信越半導体株式会社 単結晶製造装置及び単結晶の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1053485A (ja) * 1996-08-07 1998-02-24 Sumitomo Sitix Corp 電子ビーム溶解による単結晶引き上げ方法
JPH11255593A (ja) * 1998-03-12 1999-09-21 Super Silicon Kenkyusho:Kk 原料溶解補助装置
KR20100042506A (ko) * 2008-10-16 2010-04-26 주식회사 엔씨비네트웍스 정제 기능을 가지는 실리콘 잉곳 제조장치

Also Published As

Publication number Publication date
KR101299037B1 (ko) 2013-08-27
WO2012108618A2 (ko) 2012-08-16
KR20120091576A (ko) 2012-08-20

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