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WO2012176755A1 - Procédé de fabrication d'un substrat de carbure de silicium - Google Patents

Procédé de fabrication d'un substrat de carbure de silicium Download PDF

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Publication number
WO2012176755A1
WO2012176755A1 PCT/JP2012/065595 JP2012065595W WO2012176755A1 WO 2012176755 A1 WO2012176755 A1 WO 2012176755A1 JP 2012065595 W JP2012065595 W JP 2012065595W WO 2012176755 A1 WO2012176755 A1 WO 2012176755A1
Authority
WO
WIPO (PCT)
Prior art keywords
silicon carbide
substrate
carbide substrate
chamfered portion
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2012/065595
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English (en)
Japanese (ja)
Inventor
恭子 沖田
藤原　伸介
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to CN201280025086.2A priority Critical patent/CN103563055A/zh
Priority to DE112012002597.0T priority patent/DE112012002597T5/de
Publication of WO2012176755A1 publication Critical patent/WO2012176755A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/06—Joining of crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02021—Edge treatment, chamfering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

Definitions

  • the present invention relates to a method for manufacturing a silicon carbide substrate, and more particularly to a method for manufacturing a silicon carbide substrate capable of suppressing the occurrence of chipping during the formation of a chamfered portion.
  • silicon carbide has been increasingly adopted as a material constituting semiconductor devices in order to enable higher breakdown voltage, lower loss, and use in high-temperature environments.
  • Silicon carbide is a wide band gap semiconductor having a larger band gap than silicon that has been widely used as a material for forming semiconductor devices. Therefore, by adopting silicon carbide as a material constituting the semiconductor device, it is possible to achieve a high breakdown voltage and a low on-resistance of the semiconductor device.
  • a semiconductor device that employs silicon carbide as a material has an advantage that a decrease in characteristics when used in a high temperature environment is small as compared with a semiconductor device that employs silicon as a material.
  • a semiconductor device using silicon carbide as a material is manufactured, for example, by forming an epitaxial growth layer on a silicon carbide substrate, forming a region in which a desired impurity is introduced into the epitaxial growth layer, and forming an electrode.
  • the silicon carbide substrate is generally manufactured by cutting (slicing) a silicon carbide crystal (ingot).
  • silicon carbide has an extremely high hardness, the cutting is not easy. For this reason, various studies have been made on a method for cutting a silicon carbide crystal, and various methods have been proposed (see, for example, JP-A-2009-61528 (Patent Document 1)).
  • a chamfered portion is formed in a region including the outer peripheral surface in order to improve ease of subsequent handling.
  • the chamfered portion is formed without taking any measures, there is a problem that chipping occurs in the chamfered portion.
  • the present invention has been made to solve such problems, and an object of the present invention is to provide a method for manufacturing a silicon carbide substrate capable of suppressing the occurrence of chipping during the formation of a chamfered portion. is there.
  • a method of manufacturing a silicon carbide substrate according to the present invention includes a step of preparing a single crystal silicon carbide crystal, a step of obtaining a substrate by cutting the crystal, and a chamfered portion in a region including the outer peripheral surface of the substrate. Forming. In the step of obtaining the substrate, the crystal is cut so that the main surface of the substrate forms an angle of 10 ° or more with respect to the ⁇ 0001 ⁇ plane.
  • the present inventor has made a detailed study on a measure for suppressing the occurrence of chipping at the time of forming the chamfered portion, and obtained the following knowledge and arrived at the present invention.
  • the present inventor examined the frequency of chipping by paying attention to the chipping occurrence location and the surface orientation of the main surface of the substrate. As a result, it has been clarified that chipping is likely to occur at the boundary portion between the main surface on the silicon surface side of the silicon carbide substrate and the chamfered portion connected to the main surface.
  • the silicon carbide crystal is cut to obtain a substrate, the crystal is cut so that the main surface of the substrate forms an angle of a predetermined value or more with respect to the ⁇ 0001 ⁇ plane, more specifically, an angle of 10 ° or more. It was found that the above chipping was clearly suppressed in the substrate obtained in this way.
  • the crystal is cut so that the main surface of the substrate forms an angle of 10 ° or more with respect to the ⁇ 0001 ⁇ plane.
  • the hexagonal silicon carbide single crystal has a (0001) plane that is a silicon plane in which silicon atoms are arranged on the surface, and a (000-1) plane that is formed on the opposite side and is a carbon plane in which carbon atoms are arranged on the surface. have.
  • the main surface on the silicon surface side is a main surface on the side close to the silicon surface.
  • the surface of the region connected to the main surface on the silicon surface side of the substrate in the chamfered portion is an angle of 20 ° or more with respect to the (0001) plane.
  • a chamfer may be formed so as to form
  • chipping occurs when the angle formed by the surface of the region connected to the main surface on the silicon surface side of the substrate in the chamfered portion becomes smaller than the (0001) plane and becomes less than 20 °. It becomes easy to do. Therefore, chipping is generated by forming the chamfered portion so that the surface of the region connected to the main surface on the silicon surface side of the substrate forms an angle of 20 ° or more with respect to the (0001) plane in the chamfered portion. Can be suppressed.
  • the chamfering angle in the chamfered portion formed to be continuous with the main surface on the silicon surface side of the substrate is ⁇ ° and the chamfered width is Lmm.
  • the chamfered portion may be formed so that ⁇ / L exceeds 30 and is less than 200.
  • the chamfering process is often performed by supplying a liquid such as a polishing liquid to the outer peripheral surface of the substrate, bringing a grindstone into contact with the outer peripheral surface, and rotating the substrate in the circumferential direction. At this time, if the chamfer width is small, the polishing liquid is not sufficiently supplied to the processed portion, and chipping is likely to occur. On the other hand, when the chamfer angle is increased, the occurrence of this chipping is suppressed. And when the influence of both the chamfering width and the chamfering angle is taken into account, the occurrence of chipping can be effectively suppressed by making ⁇ / L exceed 30.
  • the ⁇ / L is preferably more than 30 and less than 200.
  • the chamfering angle refers to an angle on an acute angle side among angles formed by a plane including the main surface and a curved surface including a chamfered portion connected thereto.
  • the chamfer width refers to the length in the radial direction of the region processed by the chamfering process.
  • the chamfered portion in the step of forming the chamfered portion, may be formed so that the chamfer radius is 0.1 mm or greater and 0.3 mm or less.
  • the chamfer radius is preferably 0.1 mm or more and 0.3 mm or less.
  • the chamfer radius is a curvature radius of a curved surface formed on the outer peripheral surface of the substrate in a cross section in the thickness direction of the substrate on which chamfering has been performed.
  • the chamfered portion in the step of forming the chamfered portion, may be formed in a region of the substrate including an outer peripheral surface that is concave on the silicon surface side of the substrate.
  • the above chipping is particularly likely to occur.
  • the method for manufacturing a silicon carbide substrate of the present invention capable of suppressing the occurrence of chipping is particularly suitable when chamfering is performed in a situation where such chipping is particularly likely to occur.
  • the chamfered portion in the step of forming the chamfered portion, may be formed so that the variation in the chamfer width is within 100 ⁇ m.
  • the variation in the chamfer width causes the substrate to warp.
  • the curvature of the silicon carbide substrate manufactured can be reduced by making the said dispersion
  • the variation in the chamfer width refers to the difference between the maximum value and the minimum value of the chamfer width.
  • the method for manufacturing a silicon carbide substrate of the present invention it is possible to provide a method for manufacturing a silicon carbide substrate capable of suppressing the occurrence of chipping during the formation of the chamfered portion. .
  • a method for manufacturing a silicon carbide substrate in one embodiment of the present invention will be described.
  • a step of preparing a crystal (ingot) of single crystal silicon carbide is performed.
  • an ingot of single crystal silicon carbide is produced, for example, by a sublimation method described below. That is, first, a seed crystal made of single crystal silicon carbide and a raw material powder made of silicon carbide are inserted into a container made of graphite. Next, the raw material powder is heated to sublimate silicon carbide and recrystallize on the seed crystal. At this time, recrystallization proceeds while a desired impurity such as nitrogen is introduced. As a result, the single crystal silicon carbide ingot 1 shown in FIG. 1 is obtained.
  • the ingot 1 can be efficiently produced by setting the growth direction of the ingot 1 to the ⁇ 0001> direction as shown in FIG.
  • the produced ingot 1 is cut to produce a substrate.
  • the columnar (cylindrical) ingot 1 produced is set so that a part of the side surface is supported by the support base 2.
  • the wire 9 travels in a direction along the diameter direction of the ingot 1, the wire 9 approaches the ingot 1 along the cutting direction ⁇ that is a direction perpendicular to the travel direction, and the wire 9 and the ingot 1 come into contact with each other.
  • the ingot 1 is cut
  • silicon carbide substrate 3 shown in FIG. 3 is obtained.
  • ingot 1 is cut so that main surface 3 ⁇ / b> A of silicon carbide substrate 3 forms an angle of 10 ° or more with respect to the ⁇ 0001 ⁇ plane of the silicon carbide single crystal constituting silicon carbide substrate 3.
  • the region including the outer peripheral surface of silicon carbide substrate 3 obtained by cutting (slicing) ingot 1 as described above is the main surface on the silicon surface side.
  • the first inclined surface 3C having a conical surface shape inclined toward the side of reducing the thickness of the silicon carbide substrate 3, and the other main surface 3B which is the main surface on the carbon surface side.
  • the second inclined surface 3D having a conical surface shape inclined to the side on which the thickness of the silicon substrate 3 is reduced, and the curved surface shape (toroidal surface shape) connecting the first inclined surface 3C and the second inclined surface 3D.
  • a chamfered portion including the outer peripheral curved surface 3E is formed.
  • ingot 1 is cut such that main surface 3A of silicon carbide substrate 3 forms an angle of 10 ° or more with respect to the ⁇ 0001 ⁇ plane. Therefore, occurrence of chipping at the boundary portion between the main surface 3A on the silicon surface side and the first inclined surface 3C, which is likely to generate chipping in chamfering, is suppressed.
  • the surface of the region connected to main surface 3A on the silicon surface side of silicon carbide substrate 3 in the chamfered portion is used. It is preferable that the chamfered portion is formed so that a certain first inclined surface 3C forms an angle of 20 ° or more with respect to the (0001) plane. Thereby, generation
  • the silicon carbide substrate 3 when chamfering is performed, referring to FIG. 4, the silicon carbide substrate 3 is connected to main surface 3 ⁇ / b> A on the silicon surface side.
  • the chamfer angle in the chamfered portion to be formed is ⁇ ° and the chamfer width is Lmm
  • the chamfered portion is preferably formed so that ⁇ / L exceeds 30 and is less than 200. Thereby, generation
  • the chamfer radius R is 0.1 mm or more and 0.3 mm or less. It is preferable that a chamfered portion is formed. Thereby, generation
  • O indicates the center of curvature of the curved surface formed on the outer peripheral surface of the substrate in the cross section in the thickness direction of the silicon carbide substrate 3 that has been chamfered.
  • the method for manufacturing a silicon carbide substrate in the present embodiment when chamfering is performed, concave shape is formed on the main surface 3A side of silicon carbide substrate 3 on the silicon surface side of silicon carbide substrate 3.
  • the chamfered portion may be formed in a region including the outer peripheral surface. Even under such conditions in which chipping is likely to occur, according to the silicon carbide substrate manufacturing method of the present embodiment, the occurrence of chipping can be suppressed.
  • silicon carbide substrate 3 can be deformed into various forms due to the influence of conditions and the like when cutting ingot 1.
  • FIG. 5 when the entire silicon carbide substrate 3 is deformed into an arcuate shape, at least the region including the outer peripheral surface 3G having a concave shape on the main surface 3A on the silicon surface side, that is, the regions on the left and right sides in FIG.
  • the chamfered portion is preferably formed on ⁇ .
  • the chamfered portion is formed.
  • the chamfered portion is formed not only in the region ⁇ of FIG. 5 and FIG. 6 where chipping is likely to occur, but also in other regions including the outer peripheral surface 3G (regions along the outer peripheral surface 3G other than the region ⁇ ).
  • the chamfered portion may be formed over the entire circumference including the region ⁇ .
  • the chamfered portion is formed so that the variation in chamfering width L is within 100 ⁇ m in the entire circumference. Is preferred. Thereby, the curvature of silicon carbide substrate 3 can be reduced.
  • an ingot was prepared by the same method as in the above embodiment, and a silicon carbide substrate was produced by slicing the ingot.
  • the ingot was sliced so that the angle of the main surface on the silicon surface side of the silicon carbide substrate with respect to the (0001) plane, that is, the off angle from the (0001) plane was in the range of 0 ° to 80 °.
  • the off direction three types of off directions of ⁇ 10-10> direction, ⁇ 11-20> direction, and ⁇ 31-10> direction were adopted. And the chamfering process was implemented with respect to the produced silicon carbide substrate.
  • the chamfering angle ⁇ was 25 °
  • the chamfering length L was 0.2 mm
  • the chamfering radius was 0.2 mm.
  • the grindstone used for chamfering is an electrodeposition grindstone with a diamond particle size of # 600. Then, after the chamfering process was completed, the presence or absence of chipping was investigated. The experimental results are shown in Tables 1 to 3.
  • the method for manufacturing a silicon carbide substrate of the present invention can be applied particularly advantageously to the manufacture of a silicon carbide substrate that is required to suppress the occurrence of chipping during the formation of a chamfered portion.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

Un procédé de fabrication d'un substrat de carbure de silicium comprend une étape consistant à préparer un lingot d'un carbure de silicium monocristallin ; une étape consistant à obtenir un substrat de carbure de silicium (3) par découpe du lingot ; et une étape consistant à former des chanfreins (3C, 3D, 3E) dans la région comprenant la surface périphérique externe du substrat de carbure de silicium (3), dans laquelle, pendant l'étape consistant à obtenir le substrat de carbure de silicium (3), un lingot est découpé de sorte que la face primaire (3A) du substrat de carbure de silicium (3) soit à un angle de 10° ou plus par rapport à la face {0001}.
PCT/JP2012/065595 2011-06-23 2012-06-19 Procédé de fabrication d'un substrat de carbure de silicium Ceased WO2012176755A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201280025086.2A CN103563055A (zh) 2011-06-23 2012-06-19 制造碳化硅基板的方法
DE112012002597.0T DE112012002597T5 (de) 2011-06-23 2012-06-19 Verfahren zur Herstellung eines Siliciumcarbidsubstrats

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011139145A JP2013008769A (ja) 2011-06-23 2011-06-23 炭化珪素基板の製造方法
JP2011-139145 2011-06-23

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WO2012176755A1 true WO2012176755A1 (fr) 2012-12-27

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PCT/JP2012/065595 Ceased WO2012176755A1 (fr) 2011-06-23 2012-06-19 Procédé de fabrication d'un substrat de carbure de silicium

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US (1) US20120325196A1 (fr)
JP (1) JP2013008769A (fr)
CN (1) CN103563055A (fr)
DE (1) DE112012002597T5 (fr)
WO (1) WO2012176755A1 (fr)

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CN103503119B (zh) * 2011-06-02 2016-10-19 住友电气工业株式会社 碳化硅基板的制造方法
JP6233058B2 (ja) 2013-09-25 2017-11-22 住友電気工業株式会社 炭化珪素半導体基板の製造方法
JP6668674B2 (ja) * 2015-10-15 2020-03-18 住友電気工業株式会社 炭化珪素基板
DE112016005373T5 (de) 2015-11-24 2018-08-09 Sumitomo Electric Industries, Ltd. Siliziumkarbid-Einkristallsubstrat, Siliziumkarbid-Epitaxiesubstrat und Verfahren zur Herstellung einer Siliziumkarbid-Halbleitervorrichtung
EP3567139B1 (fr) 2018-05-11 2021-04-07 SiCrystal GmbH Substrat de carbure de silicium chanfreinée et procédé de chanfreinage
EP3567138B1 (fr) * 2018-05-11 2020-03-25 SiCrystal GmbH Substrat de carbure de silicium chanfreinée et procédé de chanfreinage

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WO2010119792A1 (fr) * 2009-04-15 2010-10-21 住友電気工業株式会社 Substrat, substrat doté d'un film mince, dispositif semi-conducteur et procédé de fabrication d'un dispositif semi-conducteur

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