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WO2012173350A4 - Module de cellule solaire - Google Patents

Module de cellule solaire Download PDF

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Publication number
WO2012173350A4
WO2012173350A4 PCT/KR2012/004393 KR2012004393W WO2012173350A4 WO 2012173350 A4 WO2012173350 A4 WO 2012173350A4 KR 2012004393 W KR2012004393 W KR 2012004393W WO 2012173350 A4 WO2012173350 A4 WO 2012173350A4
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WO
WIPO (PCT)
Prior art keywords
silicone resin
particles
substrate
rear substrate
solar cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2012/004393
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English (en)
Korean (ko)
Other versions
WO2012173350A2 (fr
WO2012173350A3 (fr
Inventor
우태기
홍종경
유재민
김태윤
이은주
문세영
최영호
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Electronics Inc
Original Assignee
LG Electronics Inc
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Filing date
Publication date
Application filed by LG Electronics Inc filed Critical LG Electronics Inc
Publication of WO2012173350A2 publication Critical patent/WO2012173350A2/fr
Publication of WO2012173350A3 publication Critical patent/WO2012173350A3/fr
Publication of WO2012173350A4 publication Critical patent/WO2012173350A4/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
    • H02S40/20—Optical components
    • H02S40/22—Light-reflecting or light-concentrating means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
    • H10F19/804—Materials of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Definitions

  • the present invention relates to a solar cell module.
  • Photovoltaic generation which converts light energy into electrical energy using the photoelectric conversion effect, is widely used as means for obtaining pollution-free energy.
  • a solar power generation system using a plurality of solar cell modules is also installed in a private house.
  • a solar cell module including a plurality of solar cells generated by solar light includes a protection member disposed on the top and bottom of the solar cell to protect the solar cell from external environment such as external impact and moisture.
  • a solar cell module includes a plurality of solar cells; A light-transmissive front substrate positioned on a first surface side of the solar cells; A first silicone resin positioned between the light transmissive front substrate and the solar cells; A rear substrate located on a second surface side of the solar cells; A second silicone resin positioned between the back substrate and the solar cells; And a heat conduction member positioned between the rear substrate and the solar cells, wherein the heat conduction member is formed of a plurality of particles or metal fibers having a higher thermal conductivity than the second silicon resin.
  • the particles are dispersed inside the second silicone resin and may be formed in a size of 0.001 to 2,000 mu m.
  • the particles may be formed of a light reflective metal or metal compound.
  • the plurality of particles are dispersed so as not to come into contact with neighboring particles, and when the total weight of the second silicone resin and the plurality of particles is 100, May be dispersed in the second silicone resin in a weight ratio of 3 to 40 of the total weight.
  • a solar cell module having a heat conduction member of such a configuration is capable of effectively dissipating heat generated from solar cells through the particles toward the rear substrate and then through the rear substrate.
  • the internal reflectance of the solar cell module is improved due to the light reflective particles, the amount of light incident on the solar cell can be effectively increased.
  • the plurality of particles dispersed in the second silicone resin may be formed of an oxide-based light-transmissive material having no electrical conductivity.
  • the particles formed of the light-transmitting material preferably have a different refractive index from the refractive index of the second silicone resin.
  • the refractive indexes of the particles and the second silicone resin are different from each other, the light incident on the particles is refracted at the interface between the particles and the second silicone resin and is emitted to the second silicone resin. . Therefore, the amount of light incident on the incident surface of the solar cell can be increased.
  • the particles may be formed in a size of 0.001 to 2,000 mu m.
  • the second silicone resin may include a top film in contact with the solar cells and a bottom film between the top film and the back substrate, wherein the plurality of particles may be positioned between the top film and the bottom film have.
  • the heat conduction member may be formed of a metal fiber formed of a light reflective metal material, which is located between the rear substrate and the solar cells.
  • One surface of the metal fiber may be in contact with the backside substrate, wherein a space between the fibers may be filled with a second silicone resin.
  • At least a portion of one surface of the metal fiber may be spaced apart from the rear substrate, wherein a space between the fibers of the metal fiber and a space between the metal fiber and the back substrate may be filled with a second silicone resin.
  • the solar cell module may further include a mesh type reinforcing member positioned between the rear substrate and the solar cells.
  • the reinforcing member may be made of glass fiber or metal fiber formed of a light reflective metal material.
  • One surface of the reinforcing member may contact the rear substrate, and the space between the fibers of the reinforcing member may be filled with the second silicone resin.
  • At least a portion of one surface of the reinforcing member may be spaced apart from the rear substrate, and a space between the fibers of the reinforcing member and a space between the reinforcing member and the rear substrate may be filled with the second silicone resin.
  • heat generated in the solar cells is effectively transferred to the rear substrate through the particles and then emitted through the rear substrate.
  • the internal reflectance of the solar cell module is improved due to the light reflective particles, the amount of light incident on the solar cell can be effectively increased.
  • the first silicone resin and the second silicone resin have a high light transmittance in a short wavelength band, for example, an ultraviolet band, as compared with a conventional protective film such as ethylene vinyl acetate (EVA) or polyvinyl butyral (PVB). Therefore, the problem of discoloration due to ultraviolet exposure can be suppressed, and the amount of light incident on the solar cell can be increased to improve the output of the solar cell module.
  • a conventional protective film such as ethylene vinyl acetate (EVA) or polyvinyl butyral (PVB). Therefore, the problem of discoloration due to ultraviolet exposure can be suppressed, and the amount of light incident on the solar cell can be increased to improve the output of the solar cell module.
  • the first silicone resin and the second silicone resin can be formed to have a thickness smaller than that of ethylene vinyl acetate (EVA), which has been used as a protective film, so that the thickness of the module can be reduced.
  • EVA ethylene vinyl acetate
  • the first silicone resin and the second silicone resin are superior in adhesion to the front substrate and the rear substrate than to the solar cell.
  • the adhesive strength (vertical peel strength) between the silicone resin and the front and rear substrates is 10 kg / cm 2 to 15 kg / cm 2 , Cm < 2 > to 10 kg / cm < 2 & gt ;.
  • the present invention can effectively prevent moisture, oxygen and impurities from entering the protective film over a long period of time. Therefore, the long-term reliability of the solar cell module is excellent.
  • the reinforcing member is disposed between the rear substrate and the solar cell, the strength of the solar cell module is increased and the crack is prevented by the reinforcing member. Further, since the silicone resin is prevented from being warped during the lamination process, the leveling of the rear surface of the rear substrate is excellent.
  • the space between the fibers of the reinforcing member formed in a mesh shape and the space between the reinforcing member and the rear substrate are filled with the second silicone resin, so that the joining between the respective components is facilitated.
  • the reinforcing member can be disposed closer to the rear substrate than the solar cell. In this case, it is possible to improve the efficiency of the solar cell by increasing the reflection effect of the reinforcing member, as compared with the case where the reinforcing member is disposed closer to the solar cell than the rear substrate.
  • the silicone resin has a lower curing temperature than that of the conventional protective member, the modularization process can be carried out at a lower temperature and the curing time can be shortened.
  • FIG. 1 is a conceptual diagram showing a schematic configuration of a solar cell module according to a first embodiment of the present invention.
  • 2 is a graph showing the absorption coefficient of light of the silicone resin and ethylene vinyl acetate according to the wavelength range of light.
  • FIG. 3 is an enlarged view of the portion " C " in Fig.
  • FIG. 4 is a schematic cross-sectional view showing an embodiment of a solar cell used in the solar cell module of the present invention.
  • FIG. 5 is a conceptual diagram showing a schematic configuration of a solar cell module according to a second embodiment of the present invention.
  • Fig. 6 is an enlarged view of the reinforcing member of Fig. 5.
  • FIG. 7 is an enlarged view of the portion " D " in Fig.
  • FIG. 8 is a conceptual diagram showing a schematic configuration of a solar cell module according to a third embodiment of the present invention.
  • Figs. 9 and 10 are conceptual diagrams showing a schematic configuration according to a modified embodiment of the solar cell module shown in Fig.
  • FIG. 11 is a process diagram showing a manufacturing method of the solar cell module shown in Fig.
  • the thickness is enlarged to clearly represent the layers and regions.
  • a layer, film, region, plate, or the like is referred to as being "on" another portion, it includes not only the case directly above another portion but also the case where there is another portion in between.
  • a part when a part is "directly over" another part, it means that there is no other part in the middle.
  • a part is formed as " whole " on another part, it includes not only the part formed on the entire surface (or the entire surface) of the other part but also the part not formed on the edge part.
  • FIG. 1 is a conceptual diagram showing a schematic configuration of a solar cell module according to an embodiment of the present invention.
  • the solar cell module includes a plurality of solar cells 10, an interconnector 20 for electrically connecting the plurality of solar cells 10, a first silicone resin (not shown) for protecting the plurality of solar cells 10 30 and a second silicone resin 40, a light transmissive front substrate 50 positioned on the front surface of the solar cell 10, and a rear substrate 60 positioned on the rear surface of the solar cell 10.
  • the solar cell module includes a plurality of particles (P) dispersed inside the second silicone resin (40).
  • the light-transmissive front substrate 50 is located on the first surface of the solar cell 10, for example, on the light-receiving surface side of the solar cell, and is made of tempered glass with high transmittance. At this time, the tempered glass may be a low iron tempered glass having a low iron content. The light-transmissive front substrate 50 may be embossed on the inner side to enhance the light scattering effect.
  • the first silicone resin 30 and the second silicone resin 40 prevent corrosion of the metal due to moisture penetration and protect the solar cell 10 from impact.
  • the first silicone resin 30 has a short wavelength band, for example 300nm to a light transmittance of 70% or more in 500nm, the adhesion between the light-transmitting front substrate (50) 10kg / cm 2 to 15kg / cm 2 of the material,
  • a siloxane such as polydimethylsiloxane (PDMS) or polydialkylsiloxane (PDAS).
  • PDMS polydimethylsiloxane
  • PDAS polydialkylsiloxane
  • the absorption coefficient (cm 1 ) of the first silicone resin and ethylene vinyl acetate (EVA) according to the wavelength of light is as follows.
  • FIG. 2 the graph "A” is a graph showing the change in the absorption coefficient of light of EVA according to the wavelength range of light, and the graph “B” FIG. 5 is a graph showing a change in the absorption coefficient of light.
  • the EVA used in the experiment is a conventional product used as a protective member of the solar cell, and the first silicone resin 30 used in the graph "B" is polydimethylsiloxane (PDMS).
  • PDMS polydimethylsiloxane
  • the absorption coefficient of light of EVA at a short wavelength band for example, 300 nm to 500 nm is higher than PDMS. Therefore, the light absorption rate in the short wavelength band is lower than that of the first silicone resin 30 in the EVA.
  • a low light absorption rate in a short wavelength band means that light of a short wavelength band is transmitted well.
  • the first silicone resin 30, more specifically the siloxane such as PDMS or PDAS had a light transmittance of 70% or more in a short wavelength band.
  • the amount of light absorbed in the first silicon resin 30 decreases, so that the amount of light incident into the solar cell 10 increases.
  • the output efficiency of the solar cell module is improved.
  • the durability of the module is increased because it can suppress the discoloration problem of the protective member due to the ultraviolet ray exposure and the corrosion problem due to air and oxygen absorption.
  • the thickness of the first silicone resin 30 can be reduced because the first silicone resin 30 can be formed to have a thickness smaller than that of the EVA used as a protective film.
  • the EVA is formed to a thickness of approximately 1.0 mm, but the first silicone resin 30 may be formed to a thickness of approximately 0.7 mm or less.
  • the modifying process can be performed at a lower temperature, and the curing time can be shortened.
  • the first silicone resin 30 is cured at a temperature of about 80 ⁇ or more, for example, a temperature of 90 ⁇ to 110 ⁇ , but EVA is cured at a temperature of about 165 ⁇ .
  • the modularization process can be carried out at a lower temperature.
  • the time required for curing the first silicone resin 30 is about 1.5 minutes, but it takes about 16 minutes to cure the EVA. Therefore, the time spent in the curing and modularization process of the protective film can be shortened.
  • the first silicone resin 30 can be manufactured by including about 50 parts by weight of a curing agent.
  • a second silicone resin 40 may be formed were the light transmittance on the short wavelength band is lower than the first silicone resin 30 to the adhesive force is 10kg / cm 2 to 15kg / cm 2, the resin of the rear substrate 60.
  • the second silicone resin 40 may be formed to have a thickness of 0.3 mm to 0.5 mm and the thickness of the first silicone resin 30 and the second silicone resin 40 may be the same.
  • the thickness of the second silicone resin 40 may be thicker than the thickness of the first silicone resin 30.
  • the light transmittance of the second silicone resin 40 is lower than the light transmittance of the first silicone resin 30 so that a part of the light in the short wavelength band transmitted through the first silicone resin 30 is the second silicone resin 40 It will not transmit.
  • the interface S between the first silicone resin 30 and the second silicone resin 40 is formed as an uneven surface as shown in the enlarged portion in FIG.
  • the non-planar surface that is, the non-planar surface refers to a roughened surface formed with irregularities.
  • the reason why the interface S is formed as a non-planar surface is that the first liquid silicone resin 30 is cured at a set temperature to form a cured first silicone resin 30, And the second silicone resin 40 cured on the resin 30 is formed.
  • the interface S between the first silicone resin 30 and the second silicone resin 40 is formed as a non-planar surface, the light transmitted through the first silicone resin 30 is reflected by the interface (S). Therefore, the amount of light incident on the solar cell increases.
  • the plurality of solar cells 10 are arranged such that the interface between the first silicon resin 30 and the second silicon resin 40 is located at the center of the thickness of the solar cell.
  • the plurality of solar cells 10 may be arranged such that the interconnector 20 positioned on the light receiving surface side of the solar cell 10 is immersed in the first silicon resin 30 10, the inter connecter 20 positioned on the light receiving surface side of the solar cell 10 is arranged so as to be positioned at the interface S of the first silicon resin 30 and the second silicon resin 40 .
  • the plurality of particles P that transmit the heat generated in the solar cell 10 to the rear substrate 60 act as a heat conduction member.
  • the particles P may be formed of a light-reflective metal or metal compound having a higher thermal conductivity than the second silicone resin 40.
  • the light reflective particles P may be formed of one selected from aluminum (Al), silver (Ag), nickel (Ni), gold (Au), copper (Cu)
  • the light reflective particles P are formed in a size of 0.001 to 2,000 mu m and may be mixed as a dopant inside the second silicone resin.
  • the particles When the size of the particles satisfies the above-mentioned range, the particles can efficiently transmit the heat generated in the solar cell toward the rear substrate and effectively generate light reflection or light scattering effect.
  • the particles P are formed of a metal or a metal compound, it is preferable that the plurality of particles P are dispersed so as not to come into contact with neighboring particles in order to ensure electrical insulation.
  • the weight ratio of the particles (P) to the second silicone resin (40) may be 3:97 to 40:60.
  • the second silicone resin (40) in which the plurality of particles (P) are dispersed can be prepared by mixing and dispersing a plurality of particles in a liquid silicone resin, and then applying and curing the mixed resin.
  • the second silicon resin 40 is placed between the top film 41 and the top film 41 and the rear substrate 60, which contact the solar cells 10 It is also possible to constitute the lower film 43 and to place a plurality of particles P at the interface between the upper film 41 and the lower film 43.
  • a plurality of particles P are placed on the surface of the upper film 41 in the state where the upper film 41 is formed by first coating and curing the second silicone resin, And then forming the lower film 43 by coating and curing.
  • the second silicon resin 40 is formed as a single layer, and the particles P are bonded to the second silicon resin 40 and the second silicon resin 40. [ It is also possible to place it on the interface of the rear substrate 50.
  • the plurality of particles P can be formed at the interface between the second silicone resin 40 and the rear substrate 50 by a deposition process such as sputtering or a coating process such as spin coating.
  • Particles P formed of a light reflective metal or metal compound effectively transfer heat generated from the solar cells to the rear substrate so that the rear substrate 60 is deteriorated due to thermal stress and the first silicon resin 30 The delamination phenomenon of the second silicone resin 40 is prevented from occurring.
  • the internal reflectance of the solar cell module is improved due to the light reflective particles P, the amount of light incident on the solar cell 10 increases.
  • the particles P may be formed of an oxide-based light-transmissive material having a higher thermal conductivity than that of the second silicone resin 40 and being non-conductive.
  • the particles P may be formed of one of silica, silicon dioxide (SiO 2), or a compound thereof.
  • the particles P formed of a nonconductive light-transmissive material ensure electrical insulation even when brought into contact with the light receiving surface of the solar cell 10 or the interconnector 20.
  • the particles P formed of the nonconductive light-transmitting material can be distributed more freely in the interior of the second silicone resin 40 than the particles formed of the light-reflective metal or metal compound.
  • the particles P formed of a nonconductive light-transmitting substance have a refractive index different from that of the second silicone resin 40.
  • the refractive indexes of the particles P and the second silicone resin 40 are different from each other, the light incident on the particles P is refracted at the interface between the particles P and the second silicone resin 40, 2 silicone resin 40, light diffusion effect or light scattering effect can be obtained. Therefore, the amount of light incident on the incident surface of the solar cell 10 can be increased.
  • the particles P formed of silica or silicon dioxide have better thermal conductivity than the second silicone resin 40, the heat generated in the solar cell can be effectively transferred to the rear substrate.
  • the rear substrate 60 may be formed of a light-transmissive substrate or a back sheet of an opaque material depending on the type or structure of the solar cell arranged in the solar cell module.
  • the solar cell 10 includes a substrate 110, an emitter section 120 disposed on one side of the substrate 110, for example, a front surface, a first antireflection film 120 disposed on the emitter section 120, A first electrode 140 positioned on the emitter section 120 in a region where the first antireflection film 130 is not positioned; a second electrode 140 located on the back surface field of the substrate 110; The second antireflection layer 160 located on the rear surface of the rear electric field portion 150 and the rear surface electric portion 150 of the region where the second antireflection layer 160 is not located And a second electrode 170.
  • the substrate 110 is made of a silicon wafer of a first conductivity type, for example, an n-type conductivity type.
  • the silicon may be a single crystal silicon, a polycrystalline silicon substrate, or an amorphous silicon.
  • the substrate 110 has an n-type conductivity type, the substrate 110 contains impurities of pentavalent elements such as phosphorus (P), arsenic (As), antimony (Sb), and the like. At this time, it is preferable that the substrate 110 has a resistivity of 1 ⁇ cm 2 to 10 ⁇ cm 2.
  • the substrate 110 may be of the p-type conductivity type and may be made of a semiconductor material other than silicon.
  • the substrate 110 may contain an impurity of a trivalent element such as boron (B), gallium, indium, or the like.
  • Such a substrate 110 is formed with a texturing surface where at least one of the front and back sides is textured.
  • the emitter portion 120 located on the texturizing surface of the front surface of the substrate 110 is an impurity portion having a second conductive type opposite to the conductive type of the substrate 110, for example, a p-type conductive type , And pn junction with the substrate 110.
  • the electron hole pairs which are charges generated by the light incident on the substrate 110, are separated into electrons and holes, electrons move toward the n-type, .
  • the separated electrons move toward the substrate 110, and the separated holes move toward the emitter portion 120. Therefore, electrons become the majority carriers in the substrate 110, and holes become the majority carriers in the emitter section 120.
  • the emitter section 120 When the emitter section 120 has a p-type conductivity type, the emitter section 120 is formed by doping an impurity of a trivalent element such as boron (B), gallium (Ga), indium (In) . At this time, the emitter layer 120 preferably has a sheet resistance of 30? / Sq to 120? / Sq.
  • a trivalent element such as boron (B), gallium (Ga), indium (In) .
  • the emitter portion 120 has an n-type conductivity type.
  • the separated holes move toward the substrate 110, and the separated electrons move toward the emitter section 120.
  • impurities of pentavalent elements such as phosphorus (P), arsenic (As), and antimony (Sb) may be doped into the substrate 110.
  • the first antireflection film 130 formed on the emitter layer 120 on the front surface of the substrate 110 includes a metal oxide based material.
  • the first antireflection film 130 may be formed of a top film 131 made of a silicon nitride film (SiNx: H) and a bottom film 133 positioned between the emitter film 120 and the top film 131 do.
  • a top film 131 made of a silicon nitride film (SiNx: H)
  • a bottom film 133 positioned between the emitter film 120 and the top film 131 do.
  • the lower film 133 may be made of a material having a large difference in light absorption coefficient or band gap Eg from the silicon nitride film, for example, an aluminum oxide film (AlOx).
  • AlOx aluminum oxide film
  • the first antireflection film 130 including the lower film 133 having such a structure functions as an antireflection film that reduces the reflectivity of light incident through the front surface of the substrate 110 and increases the selectivity of a specific wavelength region And also functions as a passivation film.
  • SiOx: H silicon oxide film
  • the first antireflection film 130 includes a plurality of contact lines (not shown) exposing a part of the emitter section 120.
  • the first electrode 140 is formed on the emitter layer 120 exposed through the contact line.
  • the contact line may be formed with a width of 20 to 60 mu m and may be formed to be 2 to 6% of the planar area of the emitter portion 120 .
  • the first electrode 140 may be formed to a thickness of 20 to 50 mu m when the first electrode 140 is formed using a plating process.
  • the first electrode 140 has a high aspect ratio, for example, an aspect ratio of 0.83 to 1.
  • the first electrode 140 formed in the emitter section 120 exposed through the contact line is electrically and physically connected to the emitter section 120. At this time, the first electrode 140 extends substantially parallel to the predetermined direction.
  • the first electrode 140 collects charges, for example, holes, which have migrated toward the emitter section 120.
  • the first electrode 140 may be a finger electrode.
  • the first electrode 140 may be a current collector for the finger electrode, or may be both the finger electrode and the current collector for the finger electrode.
  • the first electrode 140 is formed of a plating layer, and the plating layer includes a metal seed layer, a diffusion preventing layer, and a conductive layer sequentially formed on the emitter layer 120, respectively.
  • the metal seed layer is formed of a material containing nickel, for example, nickel silicide (including Ni 2 Si, NiSi, NiSi 2 and the like), and is formed to a thickness of 50 nm to 200 nm.
  • nickel silicide including Ni 2 Si, NiSi, NiSi 2 and the like
  • the reason for limiting the thickness of the metal seed layer to the above range is that when the thickness is less than 50 nm, the resistance is high and it is difficult to form a uniform film, so that it is easy to secure uniformity in the plating process of the diffusion preventing layer And when the thickness is 200 nm or more, shunt leakage due to nickel diffusion may occur because the metal seed layer diffuses to the silicon side in a certain proportion during the heat treatment to form a nickel silicide layer.
  • the diffusion preventing layer formed on the metal seed layer prevents junction degradation due to the diffusion of the material forming the conductive layer into the silicon interface through the metal seed layer.
  • the diffusion preventive layer has a thickness of 5 ⁇ to 15 ⁇ ≪ / RTI >
  • the conductive layer formed on the diffusion preventing layer includes at least one conductive metal material.
  • these conductive metal materials include metals such as Ni, Cu, Ag, Al, Sn, Zn, In, Ti, ), And combinations thereof, but may be made of other conductive metal materials.
  • the conductive layer includes a copper layer.
  • the copper layer functions as a substantial electrical conductor and is formed to a thickness of 10 mu m to 30 mu m.
  • an interconnector for example, a ribbon (not shown) to a copper layer, which is easily oxidized in air and electrically connects adjacent solar cells in a modularization process.
  • the conductive layer includes a copper layer
  • a tin layer is further formed on the copper layer to prevent oxidation of copper and to facilitate soldering of the ribbon, and the tin layer is formed to have a thickness of 5 ⁇ to 15 ⁇ do.
  • the conductive layer is formed of a metal material other than the copper layer, it is also possible to omit the tin layer when the other metal material is not easily oxidized in the air and can be soldered to the ribbon.
  • a collector for collecting charges moved to the finger electrode may be further formed on a front surface of the substrate 110.
  • the current collector may be formed of a plating electrode, but unlike the finger electrode, a conductive paste containing a conductive material may be printed, dried, and fired.
  • the second electrode 170 located on the rear surface of the substrate 110 collects an electric charge, for example, electrons moving toward the substrate 110, and outputs the collected electric charge to an external device.
  • the second electrode 170 may be a finger electrode.
  • the second electrode 170 may be a current collector for the finger electrode or a current collector for the finger electrode and the finger electrode.
  • the second electrode 170 may be formed of a metal such as aluminum (A), nickel (Ni), copper (Cu), silver (Ag), tin (Sn), zinc (Zn), indium (In), titanium ), And combinations thereof. ≪ IMAGE >
  • the second electrode 170 may be formed of a conductive paste containing silver (Ag) particles, or may be formed of a plating layer in the same manner as the first electrode 140.
  • the width of the second electrode 170 may be greater than the width of the first electrode 140 or the width of the second electrode 170 may be greater than the width of the first electrode 140. [ The line resistance of the second electrode 170 can be reduced.
  • the rear electric field portion 150 electrically and physically connected to the second electrode 170 is located on the entire rear surface of the substrate 110 and impurities of the same conductivity type as that of the substrate 110 are doped at a higher concentration than the substrate 110. [ For example, an n + region. At this time, it is preferable that the rear electric section 150 has a sheet resistance of 50? / Sq to 150? / Sq.
  • the rear electric field 150 forms a potential barrier due to a difference in impurity concentration from the substrate 110, thereby hindering the hole movement toward the rear surface of the substrate 110. Therefore, the recombination of electrons and holes near the surface of the substrate 110 and the disappearance thereof is reduced.
  • the second antireflection film 160 is formed on the rear surface of the rear electric part 150 where the second electrode 170 is not formed and the second antireflection film 160 is formed of a silicon nitride film (SiNx: H).
  • the front surface and the back surface of the substrate 110 are respectively formed as the textured surfaces, the light reflection on the front surface and the back surface of the substrate 110 is reduced, The incidence and reflection operations are performed on the textured surface and the light is trapped inside the solar cell, so that the absorption rate of light is increased and the efficiency of the solar cell is improved.
  • the reflection loss of light incident on the substrate 110 is reduced by the first anti-reflection film 130 and the second anti-reflection film 160, and the amount of light incident on the substrate 110 further increases.
  • These pairs of electron holes are separated from each other by the pn junction of the substrate 110 and the emitter section 120.
  • the electrons move toward the substrate 110 having the n-type conductivity type and the holes have the p-type conductivity type And moves toward the emitter section 120.
  • the electrons that have migrated toward the substrate 110 move to the second electrode 170 through the rear electric part 150 and the holes moved to the emitter part 120 move to the first electrode 140.
  • This embodiment is different from the first embodiment described above in that the reinforcing member 70 is positioned between the second silicone resin 40 and the rear substrate 60.
  • the reinforcing member 70 includes the individual fibers 73 separated by the space 71 as shown in the enlarged portion of Fig. Therefore, the reinforcing member 70 is formed in a mesh shape.
  • the reinforcing member 70 having such a configuration can be located closer to the rear substrate 60 than the solar cell 10. For example, the reinforcing member 70 contacts the rear substrate 60 as shown in Fig.
  • the reinforcing member 70 is formed in a mesh shape so that the space 71 of the reinforcing member 70 is filled with the second silicone resin 40. [ In Fig. 6, the second silicone resin 40 filled in the space 71 for displaying the space 71 is not shown. However, as described above, the space 71 of the reinforcing member 70 is filled with the second silicone resin 40.
  • Fig. 7 is an enlarged view of the portion " D " in Fig. 5, showing at least a part of the reinforcing member 70 being separated from the rear substrate 60.
  • At least a portion of the reinforcing member 70 may be spaced apart from the rear substrate 60 as shown in Figure 7. In this case the space 71 of the reinforcing member 70 and the reinforcing member 70 and the rear substrate 60 The second silicone resin 40 is filled.
  • the reinforcing member 70 may be made of glass fiber.
  • a Style 106 glass fiber piece of standard 8 inches by 8 inches supplied by BGF Industries may be made of glass fiber.
  • the reinforcing member 70 is not limited to glass fiber.
  • the reinforcing member 70 may be formed of a metal fiber formed of a light reflective metal or a metal compound.
  • the reinforcing member 70 may be formed to have a thickness smaller than the thickness of the first silicone resin 30 and the thickness of the second silicone resin, respectively. However, the thickness of the reinforcing member 70 may be the same as the thickness of the first silicone resin 30 and the thickness of the second silicone resin 40, respectively. The thickness of the reinforcing member 70 is preferably 0.3 mm to 0.5 mm.
  • the reinforcing member 70 having such a structure When the reinforcing member 70 having such a structure is disposed between the solar cell 10 and the rear substrate 60, the strength of the solar cell module is increased and cracks are prevented by the reinforcing member 70. In addition, since the second silicone resin 40 is prevented from being warped during the curing of the second silicone resin 40, the leveling of the rear substrate 60 is excellent.
  • the internal reflectance is increased and the efficiency of the solar cell module is increased.
  • the present embodiment is different from the first embodiment in that a plurality of particles P are disposed inside the second silicon resin 40 and a metal is deposited between the second silicon resin 40 and the rear substrate 60 And a heat conduction member made of fibers (F) is disposed.
  • the heat conduction member made of the metal fibers F may be configured in the same way as the reinforcing member 70 made of the metal fiber described in the second embodiment, and thus a detailed description thereof will be omitted.
  • FIG. 9 modified embodiments of the solar cell module according to the first embodiment of the present invention will be described with reference to FIGS. 9 and 10.
  • the portion of the interconnector 20 located on the light receiving surface of the solar cell 10 is immersed in the first silicone resin 30, Is located between the second silicone resin 40 and the rear substrate 60.
  • the second silicon resin 40 is disposed between the second substrate 40 and the rear substrate 60, In this case, the plurality of particles P may be placed on the second silicone resin 40 by vapor deposition or spin coating.
  • the portion of the interconnector 20 located on the light receiving surface of the solar cell 10 is located between the first silicon resin 30 and the second silicon resin 40 And the plurality of particles (P) are located inside the first silicone resin (30).
  • the first silicone resin 30 includes the upper film 31 and the lower film 33 and that a plurality of particles P are located between the upper film 31 and the lower film 33 It is also possible to form the first silicone resin 30 as a single film when the dispersion type of the particles P is controlled by appropriately controlling the weight ratio of the plurality of particles P to each other.
  • the plurality of particles P may be located in the interior of the first silicone resin 30 and the interior of the second silicone resin 40, respectively.
  • particles formed of a light-transmitting material are disposed between the light-transmissive front substrate 50 and the solar cell 10, and particles formed of a light reflective material are disposed between the solar cell 10 and the rear substrate 60 desirable.
  • a first silicone resin is applied to one surface of the front substrate 50 to a thickness of 0.3 mm to 0.5 mm, and left for 30 seconds to 60 seconds to level the first silicone resin.
  • a frame having a predetermined height surrounding the front substrate 50 may be provided to prevent the applied first silicone resin from overflowing into the outer space of the front substrate 50.
  • the front substrate coated with the first silicone resin in a liquid state is placed in an oven, and a curing process is performed at a temperature of 80 ° C or more, for example, 90 ° C to 110 ° C, (30).
  • the first silicone resin 30 adheres to the front substrate and one surface of the first silicone resin 30, that is, the surface opposite to the surface adhered to the front substrate 50, is formed as a non-planar surface.
  • a plurality of solar cells 10 are arranged on the first silicon resin 30.
  • the solar cell 10 is immersed in the first silicon resin 30 due to its weight.
  • the second silicone resin is first coated, and then left for 30 seconds to 60 seconds to level the first silicone resin applied first.
  • the operation of applying the second silicone resin in a liquid phase may be performed in a state in which a frame is provided as in the case of applying the first silicone resin.
  • the liquid second silicone resin is also filled in the space between the adjacent solar cells 10 and the space between the solar cell 10 and the first silicone resin 30.
  • a plurality of particles (P) are arranged, and then the second silicone resin is secondarily coated and leveling work is performed.
  • the rear substrate 60 is placed on the second silicone resin which is secondarily applied, and then the first silicone resin and the second silicone resin which are secondarily applied are cured together.
  • the curing operation of the first silicone resin and the second silicone resin which is secondarily coated is performed in the same manner as the first silicone resin 30 by heating to a temperature of 80 DEG C or more, for example, 90 DEG C to 110 DEG C . ≪ / RTI > Alternatively, the curing of the second silicone resin may be accomplished by conventional laminating equipment.
  • the second silicone resin 40 is formed due to the weight of the reinforcing member 70 and the rear substrate 60
  • the second silicone resin 40 is filled in the space formed between the individual fibers 73 of the reinforcing member 70 while being pressed. And the second silicone resin 40 filled in the space formed between the individual fibers is in contact with the rear substrate.
  • the second silicone resin 40 filled in the space 71 of the reinforcing member 70 is adhered to the rear substrate 60 when the second silicone resin is cured.
  • the second silicone resin 40 filled in the space between the reinforcing member 70 and the rear substrate 60 is also bonded to the rear substrate 60.
  • the metal fibers F constituting the heat conduction member may be substantially spaced apart from the rear substrate 60 by a predetermined distance.
  • the fact that the metal fibers F are substantially spaced apart from the rear substrate includes that most of the surface of the metal fibers F facing the rear substrate is spaced apart from the rear substrate except for the local area.
  • the metal fibers F may be located inside the second silicone resin 40 at a position closer to the back substrate than the solar cell.
  • a method may be employed in which the second silicone resin is coated first, the metal fibers (F) are arranged, and then the second silicone resin is coated secondarily.
  • the second silicone resin which has been first coated with the metal fibers (F) disposed thereon, is cured, and then the second silicone resin is applied secondarily. Thereafter, the second silicone resin It is also possible to cure.
  • the interface between the first silicone resin coated with the first silicone resin and the second silicone resin coated with the second silicone resin can also be formed as a non-planar surface.

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  • Photovoltaic Devices (AREA)

Abstract

La présente invention se rapporte à un module de cellule solaire qui comprend : une pluralité de cellules solaires ; un substrat de plan avant optiquement transparent positionné sur un premier plan des cellules solaires ; une première résine de silicone positionnée entre le substrat avant optiquement transparent et les cellules solaires ; un substrat de plan arrière positionné sur un second plan des cellules solaires ; une seconde résine de silicone positionnée entre le substrat de plan arrière et les cellules solaires ; et un élément thermoconducteur positionné entre le substrat de plan arrière et les cellules solaires. L'élément thermoconducteur est formé d'une pluralité de particules de fibres métalliques dont la conductivité thermique est supérieure à celle de la seconde résine de silicone.
PCT/KR2012/004393 2011-06-13 2012-06-04 Module de cellule solaire Ceased WO2012173350A2 (fr)

Applications Claiming Priority (2)

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KR1020110056649A KR101747344B1 (ko) 2011-06-13 2011-06-13 태양전지 모듈
KR10-2011-0056649 2011-06-13

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WO2012173350A2 WO2012173350A2 (fr) 2012-12-20
WO2012173350A3 WO2012173350A3 (fr) 2013-03-21
WO2012173350A4 true WO2012173350A4 (fr) 2013-05-10

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KR102266971B1 (ko) * 2014-07-24 2021-06-17 엘지전자 주식회사 태양 전지 모듈 및 이의 제조 방법
WO2019051178A1 (fr) * 2017-09-08 2019-03-14 The Regents Of The University Of Michigan Convertisseur d'énergie électromagnétique
US12445086B2 (en) 2020-08-24 2025-10-14 The Regents Of The University Of Michigan Three-dimensional photovoltaic charging system
US12377744B2 (en) 2018-04-09 2025-08-05 The Regents Of The University Of Michigan On-demand electric charge service
KR20210002816A (ko) 2019-07-01 2021-01-11 한국전기연구원 태양전지모듈 및 그의 제조방법

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JP2004311455A (ja) * 2003-02-17 2004-11-04 Kyocera Corp 太陽電池モジュール
JP2004327630A (ja) * 2003-04-23 2004-11-18 Kyocera Corp 太陽電池モジュール
JP2005129728A (ja) * 2003-10-23 2005-05-19 Kyocera Corp 太陽電池モジュール用保護シート及びこれを用いた太陽電池モジュール並びに太陽電池モジュールの製造方法
JP2011044466A (ja) * 2009-08-19 2011-03-03 Hitachi Chem Co Ltd 太陽電池モジュール用被覆材及びその製造方法
JP5381568B2 (ja) * 2009-09-29 2014-01-08 大日本印刷株式会社 太陽電池モジュール用変換効率向上部材及び太陽電池モジュール
JP5755405B2 (ja) * 2009-11-02 2015-07-29 恵和株式会社 太陽電池モジュール裏面用放熱シート及びこれを用いた太陽電池モジュール

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WO2012173350A2 (fr) 2012-12-20
WO2012173350A3 (fr) 2013-03-21
KR20120137670A (ko) 2012-12-24

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