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WO2012172768A1 - Display device - Google Patents

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Publication number
WO2012172768A1
WO2012172768A1 PCT/JP2012/003773 JP2012003773W WO2012172768A1 WO 2012172768 A1 WO2012172768 A1 WO 2012172768A1 JP 2012003773 W JP2012003773 W JP 2012003773W WO 2012172768 A1 WO2012172768 A1 WO 2012172768A1
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WO
WIPO (PCT)
Prior art keywords
substrate
display device
coil
liquid crystal
tft
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2012/003773
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French (fr)
Japanese (ja)
Inventor
松本 晋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
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Sharp Corp
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Filing date
Publication date
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Publication of WO2012172768A1 publication Critical patent/WO2012172768A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/133305Flexible substrates, e.g. plastics, organic film
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1345Conductors connecting electrodes to cell terminals
    • G02F1/13452Conductors connecting driver circuitry and terminals of panels
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements

Definitions

  • the present invention relates to a display device such as a liquid crystal display device provided with a plastic substrate.
  • a display device for example, a pair of display device substrates (that is, a thin film transistor (TFT) substrate and a color filter (CF) substrate) disposed opposite to each other is provided between the pair of substrates.
  • TFT thin film transistor
  • CF color filter
  • the TFT substrate includes a flexible plastic substrate formed of polyimide resin or the like, and a display element layer provided on the plastic substrate and having TFTs which are semiconductor elements.
  • the CF substrate includes the above-described plastic substrate and a CF element layer provided on the plastic substrate.
  • a display area for displaying an image composed of a plurality of pixels or the like is defined in an inner portion of the sealing material, and a terminal area (drive circuit area) is defined around the display area. ing.
  • a terminal In this terminal region, a terminal is provided, an integrated circuit board (or driver board) connected to the terminal, and a driving circuit board (supplied to the integrated circuit board) for supplying an external signal ( Flexible printed circuit board).
  • an insulating thermosetting resin is a main component, and the resin is composed of fine particles (for example, spherical metal particles or spherical resin particles plated with metal).
  • An anisotropic conductive adhesive layer in which conductive particles made of metal fine particles are dispersed is used (see, for example, Patent Document 1).
  • the anisotropic conductive adhesive layer When connecting the terminal formed on the flexible pudding substrate and the terminal formed on the TFT substrate via the anisotropic conductive adhesive layer described in Patent Document 1, the anisotropic conductive adhesive layer is used. In a state heated to a predetermined curing temperature, the anisotropic conductive adhesive layer is pressurized via the flexible printed circuit board, and the anisotropic conductive adhesive layer is heated and melted to electrically connect the terminals. ing.
  • the terminal formed on the flexible printed circuit board may bite into the flexible plastic substrate when the above-described pressure treatment is performed. Then, since the pressure-bonding force to the anisotropic conductive adhesive layer is dispersed, the pressure-bonding of the conductive particles becomes insufficient, and the terminal formed in the terminal region is cracked, resulting in poor connection. As a result, there has been a problem that a signal transmission failure occurs between the TFT substrate and the circuit substrate.
  • the present invention has been made in view of the above-described problems, and a display device capable of transmitting a signal between a display device substrate and a circuit substrate without using a conductive adhesive layer.
  • the purpose is to provide.
  • a display device of the present invention includes a flexible plastic substrate, a display element layer formed on the plastic substrate, having a semiconductor element, and wiring formed in the display element layer.
  • a display device substrate and a circuit substrate having a plastic substrate by inductive coupling between the first coil and the second coil without using an anisotropic conductive adhesive layer It is possible to transmit signals between the two. Accordingly, since it becomes possible to prevent a signal transmission failure between the display device substrate and the circuit board due to the use of the anisotropic conductive adhesive, a display including a flexible plastic substrate is provided. It is possible to improve the yield of mounting the circuit board on the device substrate.
  • the signal is transmitted in a non-contact manner by inductive coupling between the first and second coils, for example, an impact is generated on the display device substrate or the display device substrate is bent. Even in this case, it is possible to ensure the transmission of signals between the display device substrate and the circuit board.
  • the display device substrate and the circuit board may be bonded together via an adhesive layer.
  • the circuit board can be provided with a simple configuration, and the second coil can be disposed to face the first coil.
  • the circuit board may be a flexible printed board.
  • the signal between the display device substrate including the plastic substrate and the flexible printed circuit board is obtained by inductive coupling between the first coil and the second coil without using the anisotropic conductive adhesive layer. Can be transmitted.
  • the circuit board may be at least one of a gate driver board and a source driver board.
  • the display device substrate, the gate driver substrate, and the source driver substrate including the plastic substrate are formed by inductive coupling between the first coil and the second coil without using the anisotropic conductive adhesive layer. It is possible to transmit a signal to at least one of the two.
  • the display device of the present invention includes a laminated substrate in which a plurality of display device substrates are laminated, each of the plurality of display device substrates has a third coil formed by wiring, and each of the third coils is , May be arranged opposite to perform inductive coupling.
  • a plurality of display device substrates may be laminated via other adhesive layers.
  • the flexible device can be integrated with a simple configuration.
  • the display device substrate may be laminated by providing a plastic substrate on the surface of the display element layer in the laminated substrate.
  • the distance between semiconductor elements in the laminated display device substrate can be easily controlled by controlling the application conditions. It becomes possible to control.
  • the semiconductor element may be a TFT element.
  • the display device of the present invention has an excellent characteristic that it is possible to improve the mounting yield of the circuit board on the display device substrate including a flexible plastic substrate. Accordingly, the present invention further includes another display device substrate disposed opposite to the display device substrate, and a display medium layer provided between the display device substrate and the other display device substrate. It is preferably used for an apparatus. Moreover, this invention is used suitably when a display medium layer is a liquid crystal layer.
  • FIG. 1 is a plan view showing a liquid crystal display device according to a first embodiment of the present invention.
  • FIG. 2 is a cross-sectional view showing the liquid crystal display device according to the first embodiment of the present invention, and is a cross-sectional view taken along the line AA in FIG.
  • FIG. 2 is a cross-sectional view showing the liquid crystal display device according to the first embodiment of the present invention, and is a cross-sectional view taken along the line BB of FIG. 4 is a cross-sectional view showing the liquid crystal display device according to the first embodiment of the present invention, and is a cross-sectional view taken along the line CC of FIG. It is sectional drawing for demonstrating the manufacturing method of the liquid crystal display device which concerns on the 1st Embodiment of this invention.
  • a liquid crystal display device is exemplified as the display device.
  • FIG. 1 is a plan view showing a liquid crystal display device according to the first embodiment of the present invention
  • FIG. 2 is a cross-sectional view showing the liquid crystal display device according to the first embodiment of the present invention.
  • FIG. FIG. 3 is a cross-sectional view showing the liquid crystal display device according to the first embodiment of the present invention, and is a cross-sectional view taken along the line BB of FIG.
  • FIG. 4 is a cross-sectional view showing the liquid crystal display device according to the first embodiment of the present invention, and is a cross-sectional view taken along the line CC of FIG.
  • the liquid crystal display device 1 is opposed to the TFT substrate 2, which is a substrate for a display device in which a plurality of thin film transistors (TFTs) as semiconductor elements are formed, and the TFT substrate 2. And a CF substrate 3 which is another display device substrate.
  • TFT substrate 2 is a substrate for a display device in which a plurality of thin film transistors (TFTs) as semiconductor elements are formed
  • TFT substrate 2 is a substrate for a display device in which a plurality of thin film transistors (TFTs) as semiconductor elements are formed
  • TFT substrate 2 which is a substrate for a display device in which a plurality of thin film transistors (TFTs) as semiconductor elements are formed
  • TFT substrate 2 which is a substrate for a display device in which a plurality of thin film transistors (TFTs) as semiconductor elements are formed
  • CF substrate 3 which is another display device substrate.
  • liquid crystal display device 1 is sandwiched between a liquid crystal layer 4 which is a display medium layer sandwiched between the TFT substrate 2 and the CF substrate 3, and the TFT substrate 2 and the CF substrate 3.
  • the substrate 2 and the CF substrate 3 are bonded to each other, and a sealing material 5 provided in a frame shape is provided to enclose the liquid crystal layer 4.
  • the sealing material 5 is formed so as to circulate around the liquid crystal layer 4, and the TFT substrate 2 and the CF substrate 3 are bonded to each other via the sealing material 5.
  • the TFT substrate 2 and the CF substrate 3 are each formed in a rectangular plate shape.
  • the liquid crystal display device 1 includes a plurality of photo spacers (not shown) for regulating the thickness of the liquid crystal layer 4 (that is, the cell gap).
  • the TFT substrate 2 includes a plastic substrate 6 having a film-like flexibility formed from a resin material.
  • a resin material for forming the plastic substrate 6 for example, an organic material such as polyimide resin, polyparaxylene resin, or acrylic resin can be used.
  • a display element layer 7 provided with TFT elements and the like is formed.
  • the display element layer 7 includes a plurality of gate lines (not shown) extending in parallel with each other on the plastic substrate 6, and a plurality of source lines (not shown) extending in parallel with each other so as to be orthogonal to the gate lines.
  • a TFT element (not shown) which is a semiconductor element provided at each intersection of the gate line and the source line, and a plurality of pixel electrodes (not shown) respectively connected to the TFT elements are provided.
  • the CF substrate 3 includes a plastic substrate 8 having a film-like flexibility (flexibility) formed of a resin material, like the TFT substrate 2.
  • a resin material for forming the plastic substrate 8 the same material as the organic material for forming the plastic substrate 6 described above can be used.
  • a CF element layer 19 is formed on the plastic substrate 8 of the CF substrate 3.
  • the CF element layer 19 is provided between each colored layer and a plurality of colored layers (not shown) colored in red, green, or blue, corresponding to each pixel electrode on the TFT substrate 2.
  • a color filter including a black matrix (not shown).
  • the CF element layer 19 includes an overcoat layer (not shown) provided on the color filter, a common electrode (not shown) provided on the overcoat layer, and an alignment film (not shown) provided on the common electrode. (Not shown).
  • the thickness of the plastic substrates 6 and 8 is preferably 3 to 30 ⁇ m. If the thickness is less than 3 ⁇ m, sufficient mechanical strength may not be obtained. If the thickness is greater than 30 ⁇ m, a plastic substrate may be used when forming the display element layer 7 or the CF element layer 19. This is because the warpages of 6 and 8 become large and a problem may occur in the process.
  • the liquid crystal layer 4 includes, for example, nematic liquid crystal having electro-optical characteristics.
  • a display area D for image display is defined in an area where the TFT substrate 2 and the CF substrate 3 overlap inside the sealing material 5. Yes.
  • the display area D is configured by arranging a plurality of pixels, which are the minimum unit of an image, in a matrix.
  • the liquid crystal display device 1 is formed in a rectangular shape, and the TFT substrate 2 protrudes from the CF substrate 3 on the upper side thereof, and a drive circuit region T is formed in the protruding region. It is prescribed.
  • the drive circuit region T is provided around the display region D as shown in FIG.
  • a flexible printed circuit board 24 that is a drive circuit board is provided in the drive circuit region T, and an adhesive layer 16 having adhesiveness is provided. Accordingly, the TFT substrate 2 and the flexible printed circuit board 24 are bonded to each other.
  • the liquid crystal display device 1 includes a frame region F provided around the display region D.
  • a gate driver substrate 23 that is an integrated circuit substrate that drives gate lines in the display region D
  • a source driver substrate 26 that drives source lines in the display region D are provided.
  • the TFT substrate 2 and the gate driver substrate 23 are bonded together with an adhesive layer 37 having adhesiveness. It has a configuration.
  • the TFT substrate 2 and the source driver substrate 26 are interposed via the adhesive layer 18 having adhesiveness. It becomes the composition to be pasted together.
  • the adhesive constituting the adhesive layers 16, 18, and 37 is not particularly limited, and examples of the adhesive include adhesives of various resins such as an epoxy resin, a butyral resin, and an acrylic resin.
  • a thermosetting resin or an ultraviolet curable resin can be used as the adhesive layers 16, 18, and 37.
  • the wiring 22 that is, the wiring formed in the display element layer 7) 22 on the TFT substrate 2.
  • a second coil 25 that is formed by wiring on the flexible printed circuit board 24 and that is disposed opposite the first coil 9a and that performs inductive coupling with the first coil 9a.
  • the first coil 9b formed by the wiring 22 on the TFT substrate 2 (that is, the wiring formed in the display element layer 7), 9c is provided, and second coils 26a and 26b that are formed by wiring on the gate driver substrate 23 and are arranged to face the first coils 9b and 9c and perform inductive coupling with the first coils 9b and 9c are provided. It has been.
  • the first coils 9 d and 9 e made of wirings 22 on the TFT substrate 2 (that is, wirings formed on the display element layer 7) are provided.
  • second coils 27a and 27b that are formed by wiring on the source driver substrate 26 and are arranged to face the first coils 9d and 9e and inductively couple with the first coils 9d and 9e. Yes.
  • the flexible printed circuit board 24, the gate driver board 23, the source driver board 26, and the TFT board are formed by inductive coupling without using an anisotropic conductive adhesive. Signals can be transmitted to and from the TFT elements provided in 2.
  • signals are transmitted to the second coil 25 serving as a transmission coil via a transmission circuit (not shown) connected to the second coil 25. Is transmitted to the first coil 9a of the TFT substrate 2 that performs inductive coupling with the second coil 25.
  • the signal input to the first coil 9a formed in the drive circuit region T is transmitted through the first coils 9b and 9d in the frame region F of the TFT substrate 2 to the first coils 9b and 9d that serve as transmission coils. And transmitted to the second coils 26a and 27a that perform inductive coupling.
  • a gate signal is transmitted to the second coil 26b serving as a transmission coil via a driver circuit (not shown) connected to the second coils 26a and 26b.
  • the two coils 26b are transmitted to the first coil 9c of the TFT substrate 2 that performs inductive coupling.
  • a source signal is transmitted to the second coil 27b serving as a transmission coil via a driver circuit (not shown) connected to the second coils 27a and 27b.
  • the signal is transmitted to the first coil 9e of the TFT substrate 2 that performs inductive coupling with the second coil 27b.
  • the source driver substrate 26 in each pixel, when the gate signal is sent from the gate driver substrate 23 to the gate electrode of the TFT element through the gate line, and the TFT element is turned on, the source driver substrate 26. A source signal is sent to the source electrode of the TFT element via the source line, and a predetermined charge is written to the pixel electrode via the semiconductor layer and drain electrode of the TFT element.
  • an image is displayed by adjusting the light transmittance of the liquid crystal layer 4 by changing the alignment state of the liquid crystal layer 4 according to the magnitude of the voltage applied to the liquid crystal layer 4 in each pixel. It has a configuration.
  • the present embodiment with such a configuration, it is possible to prevent a signal transmission failure between the TFT substrate 2 and the circuit board (that is, the flexible printed board 24, the gate driver board 23, and the source driver board 26). Therefore, it becomes possible to improve the yield of mounting the circuit board on the TFT substrate 2 including the film-like flexible plastic substrate 6.
  • the TFT substrate 2 Since the signal is transmitted between the coils in a non-contact manner by inductive coupling, even if the TFT substrate 2 is impacted or the TFT substrate 2 is bent and used, the TFT substrate It is possible to ensure signal transmission between the circuit board 2 and the circuit board.
  • 5 to 16 are cross-sectional views for explaining the method of manufacturing the liquid crystal display device according to the first embodiment of the present invention.
  • the manufacturing method shown below is merely an example, and the liquid crystal display device according to the present invention is not limited to the one manufactured by the method shown below.
  • a glass substrate 17 having a thickness of about 0.7 mm is prepared as a support substrate.
  • a film-like flexible plastic substrate 6 formed of, for example, a polyimide resin on a glass substrate 17 is, for example, about 20 ⁇ m by spin coating or slit coating. Form with thickness.
  • TFT elements, pixel electrodes, first coils 9a to 9e, etc. are patterned to form the display element layer 7 as shown in FIGS.
  • a polyimide resin is applied to the entire substrate by a printing method, and then a rubbing process is performed to form an alignment film.
  • spherical silica or plastic particles are dispersed over the entire substrate to form spacers.
  • the TFT substrate 2 constituting the display region D, the terminal region T, and the frame region F can be manufactured.
  • a glass substrate 20 having a thickness of about 0.7 mm is prepared as a support substrate.
  • a film-like flexible plastic substrate 8 formed of, for example, polyimide resin on a glass substrate 20 is, for example, about 20 ⁇ m by spin coating or slit coating. Form with thickness.
  • a color filter including a colored layer and a black matrix is formed on the plastic substrate 8, and an overcoat layer, a common electrode, and the like are patterned to form a CF element layer 19.
  • a polyimide resin is applied to the entire substrate by a printing method, a rubbing process is performed, and an alignment film is formed, whereby the CF substrate 3 constituting the display region D is manufactured.
  • the black matrix is made of metal materials such as Ta (tantalum), Cr (chromium), Mo (molybdenum), Ni (nickel), Ti (titanium), Cu (copper), and Al (aluminum), and black pigments such as carbon.
  • metal materials such as Ta (tantalum), Cr (chromium), Mo (molybdenum), Ni (nickel), Ti (titanium), Cu (copper), and Al (aluminum), and black pigments such as carbon.
  • ⁇ TFT substrate / CF substrate bonding process First, for example, using a dispenser, the sealing material 5 made of ultraviolet curing and thermosetting resin or the like is drawn on the CF substrate 3 in a frame shape.
  • a liquid crystal material for forming the liquid crystal layer 4 is dropped on a region inside the sealing material 5 in the CF substrate 3 on which the sealing material 5 is drawn.
  • the CF substrate 3 onto which the liquid crystal material is dropped and the TFT substrate 2 are bonded together under reduced pressure.
  • the front and back surfaces of the bonded body are pressurized by releasing the bonded body to atmospheric pressure.
  • the sealing material 5 is cured by heating the bonded body, and as shown in FIG. 9, the TFT substrate 2 and the CF substrate 3 A bonded body in which is bonded is produced.
  • the second coil 25 formed on the flexible printed circuit board 24 is placed on the adhesive layer 16. Then, in a state where the adhesive layer 16 is heated to a predetermined curing temperature, the adhesive layer 16 is pressed with a predetermined pressure toward the TFT substrate 2 via the flexible printed circuit board 24, whereby the adhesive layer 16 is The first coil 9a and the second coil 25 are provided to face each other through the adhesive layer 16 by heating and melting.
  • the TFT substrate 2 and the flexible printed circuit board 24 are bonded to each other through the adhesive layer 16, and inductive coupling is performed by the first coil 9 a and the second coil 25. 2 and the flexible printed circuit board 24 are electrically connected.
  • the first coil 9b and the second coil 26a, and the first coil 9c and the second coil 26b are arranged to face each other so that the inductive coupling is performed with the 26b.
  • the TFT substrate 2 and the gate driver substrate 23 are aligned with the adhesive layer 37 interposed between the TFT substrate 2 and the gate driver substrate 23.
  • the first coil 9d and the second coil 27a, and the first coil 9e and the second coil 27b are arranged to face each other so that the coils 27a and 27b perform inductive coupling.
  • the TFT substrate 2 and the source driver substrate 26 are aligned with the adhesive layer 18 interposed between the TFT substrate 2 and the source driver substrate 26.
  • the second coils 26 a and 26 b formed on the gate driver substrate 23 are placed on the adhesive layer 37, and the source driver substrate 26 is placed on the adhesive layer 18.
  • the second coils 27a and 27b formed in the above are placed.
  • the adhesive layers 18 and 37 are moved toward the TFT substrate 2 with a predetermined pressure via the gate driver substrate 23 and the source driver substrate 26. By applying pressure, the adhesive layers 18 and 37 are heated and melted.
  • the first coils 9b to 9e and the second coils 26a, 26b, 27a, and 27b are provided to face each other with the adhesive layers 18 and 37 interposed therebetween.
  • the TFT substrate 2, the gate driver substrate 23, and the source driver substrate 26 are bonded to each other via the adhesive layers 18 and 37, and the first coils 9b to 9e and the second coils 26a and 26b.
  • 27a and 27b inductive coupling is performed, and the TFT substrate 2, the gate driver substrate 23, and the source driver substrate 26 are brought into conduction.
  • the glass substrate 17 is peeled off by irradiating laser light (arrows in FIGS. 13 to 15) from the glass substrate 17 side.
  • the removal of the glass substrate 17 may not be peeling by laser light irradiation.
  • the glass substrate 17 may be removed using a polishing and etching apparatus.
  • signals are transmitted between the circuit board and the TFT substrate 2 by inductive coupling without using an anisotropic conductive adhesive layer. Therefore, even when the glass substrate 17 is peeled off by laser light irradiation, stress acts on the boundary portion between the plastic substrate 6 and the glass substrate 17, and deformation such as warpage or undulation occurs in the plastic substrate 6. Signal transmission can be performed.
  • the glass substrate 20 is peeled off by irradiating laser light (arrows in FIG. 16) from the glass substrate 20 side.
  • the removal of the glass substrate 20 may not be peeling by laser light irradiation, as in the case of the glass substrate 17 described above.
  • the glass substrate 20 may be removed using a polishing and etching apparatus.
  • a polarizing plate (not shown) and a backlight unit (not shown) are provided to complete the liquid crystal display device 1 shown in FIGS.
  • a semiconductor device configured by laminating rigid LSI chips and transmitting signals between the LSI chips by inductive coupling using a coil is disclosed (for example, JP-A-2005-228981). Issue gazette).
  • a semiconductor element and a communication coil are formed on a rigid substrate such as a silicon substrate.
  • a silicon substrate is mechanically polished on the side opposite to the side where the semiconductor element and the coil are formed, so that the thickness of the silicon substrate is about 50 ⁇ m.
  • each LSI chip on which the semiconductor element and the coil are formed is bonded via an adhesive layer, whereby a semiconductor device in which a plurality of LSI chips are stacked is manufactured.
  • the above-described mechanical polishing process has a problem that the manufacturing process takes a long time and costs are increased.
  • the inductive coupling strength between the coils decreases in proportion to the square of the distance between the coils. Therefore, in order to reduce power consumption, the thickness of the silicon substrate is reduced and the distance between the coils is shortened. There is a need. However, when the thickness of the silicon substrate is reduced, the handleability of the silicon substrate is reduced, and as described above, the polishing process takes a long time, so the thickness of the silicon substrate cannot be sufficiently reduced. It was difficult to reduce power consumption.
  • crosstalk may occur due to adjacent coils.
  • the point where the crosstalk intensity becomes 0 at the portion where the coils influence each other depends on the distance between the coils performing communication. That is, the smaller the distance between the coils that perform communication, the smaller the distance between adjacent coils, thereby suppressing the occurrence of crosstalk. Therefore, it is considered that the coil installation density depends on the thickness of the silicon substrate (see T. Kuroda, “System LSI: Challenges and Opportunities” IEICE TRANS. ELECTRON., VOL89-C, NO.3 Mar. 2006).
  • the thickness of the silicon substrate is reduced, the handleability of the silicon substrate is lowered and the polishing process takes a long time. Therefore, the thickness of the silicon substrate cannot be made sufficiently small, and as a result, it is difficult to suppress the occurrence of crosstalk.
  • the film-like flexible plastic substrate 6 formed of a polyimide resin is formed by a spin coat method or a slit coat method.
  • the thickness of the plastic substrate 6 can be controlled only by changing the set value of the spin coater or the set value of the slit coater.
  • the plastic substrate 6 having a small thickness (for example, about 20 ⁇ m) provided with the display element layer 7 having semiconductor elements and the first coils 9a to 9e is removed by peeling the glass substrate 17 by laser light irradiation. Can be formed. Therefore, unlike the above-described conventional semiconductor device, mechanical polishing of the substrate is not necessary, so that it is possible to prevent the manufacturing process from being lengthened and to suppress an increase in cost.
  • the plastic substrate 6 has flexibility, even if the thickness is small, unlike the glass substrate, it is possible to prevent the plastic substrate 6 from being damaged without deteriorating the handleability.
  • the plastic substrate 6 does not have the property of cleaving, and therefore the plastic substrate 6 is cracked in the circuit substrate connecting process using the adhesive layers 16, 18, and 37. Even in this case, the damage can be prevented from spreading over a wide range. As a result, it is possible to prevent a decrease in yield of the liquid crystal display device 1 and to suppress an increase in cost.
  • the handling property of the plastic substrate 6 is not deteriorated, and the manufacturing process can be prevented from taking a long time. Can be sufficiently reduced in thickness. As a result, it is possible to reduce power consumption used for inductive coupling between the coils. Further, in order to suppress the occurrence of crosstalk, the distance between coils for communication can be reduced (more specifically, the distance can be reduced to about one-tenth that when a silicon substrate is used). Therefore, the installation density of the coil can be improved.
  • FIG. 17 is a cross-sectional view showing a liquid crystal display device according to the second embodiment of the present invention
  • FIG. 18 is a cross-sectional view of the multilayer substrate in the display region of the liquid crystal display device according to the second embodiment of the present invention. It is.
  • the same components as those in the first embodiment are denoted by the same reference numerals and description thereof is omitted. Further, the overall configuration of the liquid crystal display device is the same as that described in the first embodiment, and therefore detailed description thereof is omitted here.
  • a laminated substrate 2 a obtained by laminating the TFT substrate 2 with an adhesive layer 21 is used instead of the TFT substrate 2 described above.
  • a third coil 9f formed by wiring on the TFT substrate 2 (that is, wiring formed in the display element layer 7);
  • a third coil 9g is provided opposite to the third coil 9f and inductively coupled with the third coil 9f.
  • signals are transmitted between the TFT elements 11 formed on the display element layer 7 by inductive coupling without using an anisotropic conductive adhesive. Is possible.
  • the TFT substrate 2 on which the TFT element 11 is formed is laminated on the plastic substrate 6, and the flexible device is integrated. Even in this case, signals can be transmitted between the TFT elements 11 formed in the display element layer 7 by inductive coupling without using an anisotropic conductive adhesive.
  • the adhesive agent which comprises the adhesive bond layer 21 the adhesive agent of various resin, such as an epoxy resin, a butyral resin, an acrylic resin, is mentioned like the above-mentioned adhesive bond layers 16, 18, and 37, for example.
  • a thermosetting resin or an ultraviolet curable resin can be used.
  • the third coil 9f is attached to the TFT substrate 2 on which the third coil 9g is formed via the adhesive layer 21.
  • the laminated substrate 2a is produced by bonding the formed TFT substrate 2 together.
  • the third coil 9f is formed through the adhesive layer 21 on the TFT substrate 2 on which the third coil 9g is formed, and the glass substrate 17 which is a support substrate is provided. It is good also as a structure which produces the laminated substrate 2a by bonding the TFT substrate 2, and peels the glass substrate 17 in the subsequent glass plate peeling process.
  • the flexible device can be integrated with a simple configuration.
  • FIG. 19 is a cross-sectional view showing a liquid crystal display device according to the third embodiment of the present invention
  • FIG. 20 is a cross-sectional view of the multilayer substrate in the display region of the liquid crystal display device according to the third embodiment of the present invention. It is.
  • the two TFT substrates 2 are directly stacked without using the adhesive layer 21 described in the second embodiment.
  • the feature is that the laminated substrate 2b is used.
  • a third formed by wiring on the TFT substrate 2 that is, wiring formed on the display element layer 7.
  • a coil 9f and a third coil 9g arranged in opposition to the third coil 9f and performing inductive coupling with the third coil 9f are provided.
  • the third coil 9f is formed, and the TFT substrate 2 provided with the glass substrate 17 as the support substrate is subjected to spin coating or slit coating.
  • a polyimide resin is applied with a thickness of about 20 ⁇ m, and then a drying treatment and a curing (annealing treatment) are performed to form a film-like flexible plastic substrate 6 formed of the polyimide resin.
  • the display element layer 7 on which the TFT element 11 and the third coil 9g are formed is formed on the plastic substrate 6, and the glass substrate 17 is peeled off in the glass plate peeling step, whereby the two TFT substrates 2 are formed.
  • the laminated substrate 2b to be configured is produced.
  • the present embodiment unlike the above-described second embodiment, it is not necessary to laminate the TFT substrate 2 using the adhesive layer 21, so that a bonding process using the adhesive layer 21 is not necessary. Since the adhesive layer 21 is not used, the cost can be reduced.
  • the bonding step by the adhesive layer 21 is not necessary, it is possible to prevent air bubbles from being caught in the bonding step, and to improve the yield.
  • the distance between the TFT elements 11 in the laminated TFT substrate 2 can be easily controlled by controlling the application conditions. It becomes possible to control.
  • the upper TFT substrate 2 can be laminated using, for example, the alignment mark of the lower TFT substrate 2. become. Accordingly, the communication third coils 9f and 9g can be aligned with accuracy of photolithography, and miniaturization is possible. Furthermore, since it is not necessary to form a through hole for electrical connection, the manufacturing process can be simplified.
  • the display element layers 7 of the two TFT substrates 2 constituting the laminated substrate 2 a in the second embodiment are bonded together by the adhesive layer 21, and two TFTs are formed in the adhesive layer 21.
  • the element 11 and the third coils 9f and 9g may be arranged to face each other.
  • the TFT substrate 2 is bent and formed on the flexible printed circuit board 24 and the first coil 9a formed on the TFT substrate 2.
  • the second coil 25 may be provided so as to face the first coil 9a and perform inductive coupling with the first coil 9a.
  • the drive circuit region T can be narrowed, so that the frame of the liquid crystal display device 46 can be reduced.
  • the driver circuit 50 formed on the gate driver substrate 23 and the source driver substrate 26 described above is formed on the display element layer 7, and between these driver circuit 50 and the TFT element 11.
  • the signal transmission may be performed by inductive coupling of the fourth coils 9h to 9j arranged to face each other so as to perform inductive coupling.
  • the driver circuit 50 is formed in a region overlapping with the TFT element 11 (that is, a region where light L is not transmitted).
  • the two TFT substrates 2 may be stacked.
  • three or more TFT substrates 2 may be stacked to form a stacked substrate.
  • a semiconductor element is not limited to this, For example, it formed with polysilicon, amorphous silicon, indium gallium zinc oxide (IGZO). It may be a transistor, a diode, an organic semiconductor, or the like.
  • the display device related to an LCD liquid crystal display
  • the display device can be an organic EL (organic electroluminescence), electrophoresis (electrophoretic), PD (plasma display). Plasma display), PALC (plasma addressed liquid crystal display), inorganic EL (inorganic electroluminescence), FED (field emission display), or SED (surface-conduction electron-emitter display) It may be a display device related to an electric field display.
  • the present invention is particularly useful for a display device such as a liquid crystal display device provided with a plastic substrate.
  • Liquid crystal display device TFT substrate (substrate for display device) 2a Multilayer substrate 2b Multilayer substrate 3 CF substrate (Other display device substrate) 4 Liquid crystal layer (display medium layer) DESCRIPTION OF SYMBOLS 5 Seal material 6 Plastic substrate 7 Display element layer 8 Plastic substrate 9a 1st coil 9b 1st coil 9c 1st coil 9d 1st coil 9e 1st coil 9f 3rd coil 9g 3rd coil 9h 4th coil 9i 4th coil 9j 4th coil 11 TFT element (semiconductor element) 16 Adhesive Layer 18 Adhesive Layer 19 CF Element Layer 20 Glass Substrate 21 Adhesive Layer (Other Adhesive Layer) 22 Wiring 23 Gate driver board (circuit board) 24 Flexible printed circuit boards (circuit boards) 25 second coil 26 source driver board 26a second coil 26b second coil 27a second coil 27b second coil 37 adhesive layer 40 liquid crystal display device 45 liquid crystal display device 46 liquid crystal display device 50 driver circuit 51 back

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Abstract

A liquid crystal display device (1) is provided with: a TFT substrate (2) comprising a flexible plastic substrate (6), a display element layer (7) formed on the plastic substrate (6) and comprising semiconductor elements, and a first coil (9a) made of a wire formed on the display element layer (7); and a flexible printed substrate (24) arranged to be opposed to the first coil (9a), comprising a second coil (25) which performs inductive coupling to the first coil (9a), and provided around a display area (D) which displays images.

Description

表示装置Display device

 本発明は、プラスチック基板を備えた液晶表示装置等の表示装置に関する。 The present invention relates to a display device such as a liquid crystal display device provided with a plastic substrate.

 近年、ディスプレイ分野では、フレキシブル性、耐衝撃性や軽量性の点でガラス基板に比べて大きなメリットのあるプラスチック基板を用いた表示装置が非常に注目を浴びており、ガラス基板のディスプレイでは不可能であった新たな表示装置が創出される可能性を秘めている。 In recent years, in the display field, display devices using plastic substrates, which have great advantages over glass substrates in terms of flexibility, impact resistance and light weight, have received much attention. This has the potential to create a new display device.

 このような表示装置としては、例えば、互いに対向して配置された一対の表示装置用基板(即ち、TFT(Thin Film Transistor)基板とCF(Color Filter)基板)と、一対の基板の間に設けられた液晶層とを有する液晶表示装置が提案されている。 As such a display device, for example, a pair of display device substrates (that is, a thin film transistor (TFT) substrate and a color filter (CF) substrate) disposed opposite to each other is provided between the pair of substrates. There has been proposed a liquid crystal display device having a liquid crystal layer.

 この液晶表示装置では、TFT基板は、ポリイミド樹脂等により形成された可撓性を有するプラスチック基板と、プラスチック基板上に設けられ、半導体素子であるTFTを有する表示素子層とを備えている。また、CF基板は、上述のプラスチック基板と、プラスチック基板上に設けられたCF素子層とを備えている。 In this liquid crystal display device, the TFT substrate includes a flexible plastic substrate formed of polyimide resin or the like, and a display element layer provided on the plastic substrate and having TFTs which are semiconductor elements. The CF substrate includes the above-described plastic substrate and a CF element layer provided on the plastic substrate.

 また、この液晶表示装置では、シール材の内側の部分に、複数の画素等で構成された画像表示を行う表示領域が規定され、この表示領域の周辺に端子領域(駆動回路領域)が規定されている。 Further, in this liquid crystal display device, a display area for displaying an image composed of a plurality of pixels or the like is defined in an inner portion of the sealing material, and a terminal area (drive circuit area) is defined around the display area. ing.

 この端子領域においては、端子が設けられるとともに、この端子に接続された集積回路基板(または、ドライバ基板)と、集積回路基板に接続された、外部からの信号を供給するための駆動回路基板(フレキシブルプリント基板)が設けられている。 In this terminal region, a terminal is provided, an integrated circuit board (or driver board) connected to the terminal, and a driving circuit board (supplied to the integrated circuit board) for supplying an external signal ( Flexible printed circuit board).

 ここで、一般に、端子領域に形成された端子と上述のフレキシブルプリント基板等の回路基板に形成された端子とを導通させる方法として、接着性を有する導電性接着剤層を介して、薄膜トランジスタ基板と回路基板とを貼り合わせる構成が採用されている。 Here, in general, as a method of electrically connecting a terminal formed in a terminal region and a terminal formed on a circuit board such as the above-described flexible printed circuit board, a thin film transistor substrate and a thin film transistor substrate through an adhesive conductive adhesive layer A configuration in which the circuit board is bonded is adopted.

 この導電性接着剤層としては、例えば、絶縁性の熱硬化性樹脂を主成分とし、当該樹脂中に、微細な粒子(例えば、球状の金属微粒子や金属でメッキされた球状の樹脂粒子からなる金属微粒子)からなる導電性粒子が分散された異方導電性接着剤層が使用されている(例えば、特許文献1参照)。 As this conductive adhesive layer, for example, an insulating thermosetting resin is a main component, and the resin is composed of fine particles (for example, spherical metal particles or spherical resin particles plated with metal). An anisotropic conductive adhesive layer in which conductive particles made of metal fine particles are dispersed is used (see, for example, Patent Document 1).

特開2009-217284号公報JP 2009-217284 A

 上記特許文献1に記載の異方導電性接着剤層を介して、フレキシブルプリン基板に形成された端子とTFT基板に形成された端子とを接続する際には、異方導電性接着剤層を所定の硬化温度に加熱した状態で、フレキシブルプリント基板を介して、異方導電性接着剤層を加圧し、異方導電性接着剤層を加熱溶融させて、端子間を導電接続する構成となっている。 When connecting the terminal formed on the flexible pudding substrate and the terminal formed on the TFT substrate via the anisotropic conductive adhesive layer described in Patent Document 1, the anisotropic conductive adhesive layer is used. In a state heated to a predetermined curing temperature, the anisotropic conductive adhesive layer is pressurized via the flexible printed circuit board, and the anisotropic conductive adhesive layer is heated and melted to electrically connect the terminals. ing.

 しかし、プラスチック基板を使用した表示装置においては、上述の加圧処理を行う際に、フレキシブルプリント基板に形成された端子が、可撓性を有するプラスチック基板に食い込んでしまう場合がある。そうすると、異方導電性接着剤層に対する圧着力が分散するため、導電性粒子の圧着が不十分になってしまうとともに、端子領域に形成された端子にクラックが生じてしまい、接続不良が生じる。その結果、TFT基板と回路基板との間において、信号の伝達不良が生じるという問題があった。 However, in a display device using a plastic substrate, the terminal formed on the flexible printed circuit board may bite into the flexible plastic substrate when the above-described pressure treatment is performed. Then, since the pressure-bonding force to the anisotropic conductive adhesive layer is dispersed, the pressure-bonding of the conductive particles becomes insufficient, and the terminal formed in the terminal region is cracked, resulting in poor connection. As a result, there has been a problem that a signal transmission failure occurs between the TFT substrate and the circuit substrate.

 そこで、本発明は、上述の問題に鑑みてなされたものであり、導電性接着剤層を使用することなく、表示装置用基板と回路基板との間において信号の伝達を行うことができる表示装置を提供することを目的とする。 Accordingly, the present invention has been made in view of the above-described problems, and a display device capable of transmitting a signal between a display device substrate and a circuit substrate without using a conductive adhesive layer. The purpose is to provide.

 上記目的を達成するために、本発明の表示装置は、可撓性を有するプラスチック基板、プラスチック基板上に形成され、半導体素子を有する表示素子層、及び表示素子層に形成された配線からなる第1コイルを有する表示装置用基板と、画像表示を行う表示領域の周辺に設けられ、第1コイルに対向して配置されて第1コイルと誘導性結合を行う第2コイルを有する回路基板とを備えることを特徴とする。 In order to achieve the above object, a display device of the present invention includes a flexible plastic substrate, a display element layer formed on the plastic substrate, having a semiconductor element, and wiring formed in the display element layer. A display device substrate having one coil, and a circuit substrate having a second coil provided in the periphery of a display region for displaying an image and disposed opposite to the first coil and performing inductive coupling with the first coil. It is characterized by providing.

 同構成によれば、上記従来技術と異なり、異方導電性接着剤層を使用することなく、第1コイルと第2コイルとの誘導性結合により、プラスチック基板を備える表示装置用基板と回路基板との間における信号の伝達を行うことが可能になる。従って、異方導電性接着剤を使用することに起因する表示装置用基板と回路基板との間における信号の伝達不良を防止することが可能になるため、可撓性を有するプラスチック基板を備える表示装置用基板への回路基板の実装歩留まりを向上させることが可能になる。 According to this configuration, unlike the above-described prior art, a display device substrate and a circuit substrate having a plastic substrate by inductive coupling between the first coil and the second coil without using an anisotropic conductive adhesive layer. It is possible to transmit signals between the two. Accordingly, since it becomes possible to prevent a signal transmission failure between the display device substrate and the circuit board due to the use of the anisotropic conductive adhesive, a display including a flexible plastic substrate is provided. It is possible to improve the yield of mounting the circuit board on the device substrate.

 また、上記従来技術と異なり、高価な異方導電性接着剤を使用する必要がなくなるため、コストダウンを図ることが可能になる。 In addition, unlike the above-described conventional technology, it is not necessary to use an expensive anisotropic conductive adhesive, so that the cost can be reduced.

 更に、第1及び第2コイル間において、誘導性結合により非接触で信号の伝達を行う構成であるため、例えば、表示装置用基板に対する衝撃が発生したり、表示装置用基板を屈曲させて使用する場合であっても、表示装置用基板と回路基板との間における信号の伝達を確保することが可能になる。 Furthermore, since the signal is transmitted in a non-contact manner by inductive coupling between the first and second coils, for example, an impact is generated on the display device substrate or the display device substrate is bent. Even in this case, it is possible to ensure the transmission of signals between the display device substrate and the circuit board.

 本発明の表示装置においては、表示装置用基板と回路基板とが、接着剤層を介して、貼り合わされていてもよい。 In the display device of the present invention, the display device substrate and the circuit board may be bonded together via an adhesive layer.

 同構成によれば、簡単な構成で、回路基板を設けることができるとともに、第1コイルに対向して第2コイルを配置することが可能になる。 According to this configuration, the circuit board can be provided with a simple configuration, and the second coil can be disposed to face the first coil.

 本発明の表示装置においては、回路基板が、フレキシブルプリント基板であってもよい。 In the display device of the present invention, the circuit board may be a flexible printed board.

 同構成によれば、異方導電性接着剤層を使用することなく、第1コイルと第2コイルとの誘導性結合により、プラスチック基板を備える表示装置用基板とフレキシブルプリント基板との間における信号の伝達を行うことが可能になる。 According to this configuration, the signal between the display device substrate including the plastic substrate and the flexible printed circuit board is obtained by inductive coupling between the first coil and the second coil without using the anisotropic conductive adhesive layer. Can be transmitted.

 本発明の表示装置においては、回路基板が、ゲートドライバ基板及びソースドライバ基板の少なくとも一方であってもよい。 In the display device of the present invention, the circuit board may be at least one of a gate driver board and a source driver board.

 同構成によれば、異方導電性接着剤層を使用することなく、第1コイルと第2コイルとの誘導性結合により、プラスチック基板を備える表示装置用基板と、ゲートドライバ基板及びソースドライバ基板の少なくとも一方との間における信号の伝達を行うことが可能になる。 According to this configuration, the display device substrate, the gate driver substrate, and the source driver substrate including the plastic substrate are formed by inductive coupling between the first coil and the second coil without using the anisotropic conductive adhesive layer. It is possible to transmit a signal to at least one of the two.

 本発明の表示装置においては、複数の表示装置用基板が積層された積層基板を備え、複数の表示装置用基板の各々は配線により形成された第3コイルを有し、第3コイルの各々が、誘導性結合を行うように対向して配置されていてもよい。 The display device of the present invention includes a laminated substrate in which a plurality of display device substrates are laminated, each of the plurality of display device substrates has a third coil formed by wiring, and each of the third coils is , May be arranged opposite to perform inductive coupling.

 同構成によれば、フレキシブルデバイスを集積化した場合であっても、異方導電性接着剤を使用することなく、第3コイルによる誘導性結合により、表示素子層に形成された半導体素子間において信号の伝達を行うことが可能になる。 According to the configuration, even when flexible devices are integrated, without using an anisotropic conductive adhesive, between the semiconductor elements formed in the display element layer by inductive coupling by the third coil. Signal transmission can be performed.

 本発明の表示装置においては、複数の表示装置用基板が、他の接着剤層を介して積層されていてもよい。 In the display device of the present invention, a plurality of display device substrates may be laminated via other adhesive layers.

 同構成によれば、複数の表示装置用基板を接着剤層を介して積層するため、簡単な構成で、フレキシブルデバイスを集積化することができる。 According to this configuration, since the plurality of display device substrates are stacked via the adhesive layer, the flexible device can be integrated with a simple configuration.

 本発明の表示装置においては、積層基板において、表示素子層の表面上にプラスチック基板を設けることにより、表示装置用基板を積層してもよい。 In the display device of the present invention, the display device substrate may be laminated by providing a plastic substrate on the surface of the display element layer in the laminated substrate.

 同構成によれば、接着剤層を使用して表示装置用基板を積層する必要がないため、接着剤層による貼り合わせ工程が不要になるとともに、コストダウンを図ることが可能になる。 According to this configuration, there is no need to laminate the display device substrate using the adhesive layer, so that a bonding step using the adhesive layer is not necessary, and the cost can be reduced.

 また、接着剤層による貼り合わせ工程が不要であるため、貼り合わせ工程における気泡の挟み込み等を防止することができ、歩留まりを向上させることが可能になる。 In addition, since a bonding step using an adhesive layer is not necessary, it is possible to prevent air bubbles from being caught in the bonding step and to improve the yield.

 更に、例えば、ポリイミド樹脂を塗布して、表示素子層の表面上にプラスチック基板を形成する際に、塗布条件を制御することにより、積層された表示装置用基板における半導体素子間の距離を容易に制御することが可能になる。 Furthermore, for example, when a polyimide resin is applied to form a plastic substrate on the surface of the display element layer, the distance between semiconductor elements in the laminated display device substrate can be easily controlled by controlling the application conditions. It becomes possible to control.

 本発明の表示装置においては、半導体素子がTFT素子であってもよい。 In the display device of the present invention, the semiconductor element may be a TFT element.

 また、本発明の表示装置は、可撓性を有するプラスチック基板を備える表示装置用基板への回路基板の実装歩留まりを向上させることができるという優れた特性を備えている。従って、本発明は、表示装置用基板に対向して配置された他の表示装置用基板と、表示装置用基板及び他の表示装置用基板の間に設けられた表示媒体層とを更に備える表示装置に好適に使用される。また、本発明は、表示媒体層が液晶層である場合に好適に使用される。 Further, the display device of the present invention has an excellent characteristic that it is possible to improve the mounting yield of the circuit board on the display device substrate including a flexible plastic substrate. Accordingly, the present invention further includes another display device substrate disposed opposite to the display device substrate, and a display medium layer provided between the display device substrate and the other display device substrate. It is preferably used for an apparatus. Moreover, this invention is used suitably when a display medium layer is a liquid crystal layer.

 本発明によれば、可撓性を有するプラスチック基板を備える表示装置において、回路基板の接続信頼性の低下を防止することができる。 According to the present invention, in a display device including a flexible plastic substrate, it is possible to prevent a reduction in connection reliability of the circuit board.

本発明の第1の実施形態に係る液晶表示装置を示す平面図である。1 is a plan view showing a liquid crystal display device according to a first embodiment of the present invention. 本発明の第1の実施形態に係る液晶表示装置を示す断面図であり、図1のA-A断面図である。FIG. 2 is a cross-sectional view showing the liquid crystal display device according to the first embodiment of the present invention, and is a cross-sectional view taken along the line AA in FIG. 本発明の第1の実施形態に係る液晶表示装置を示す断面図であり、図1のB-B断面図である。FIG. 2 is a cross-sectional view showing the liquid crystal display device according to the first embodiment of the present invention, and is a cross-sectional view taken along the line BB of FIG. 図4は、本発明の第1の実施形態に係る液晶表示装置を示す断面図であり、図1のC-C断面図である。4 is a cross-sectional view showing the liquid crystal display device according to the first embodiment of the present invention, and is a cross-sectional view taken along the line CC of FIG. 本発明の第1の実施形態に係る液晶表示装置の製造方法を説明するための断面図である。It is sectional drawing for demonstrating the manufacturing method of the liquid crystal display device which concerns on the 1st Embodiment of this invention. 本発明の第1の実施形態に係る液晶表示装置の製造方法を説明するための断面図である。It is sectional drawing for demonstrating the manufacturing method of the liquid crystal display device which concerns on the 1st Embodiment of this invention. 本発明の第1の実施形態に係る液晶表示装置の製造方法を説明するための断面図である。It is sectional drawing for demonstrating the manufacturing method of the liquid crystal display device which concerns on the 1st Embodiment of this invention. 本発明の第1の実施形態に係る液晶表示装置の製造方法を説明するための断面図である。It is sectional drawing for demonstrating the manufacturing method of the liquid crystal display device which concerns on the 1st Embodiment of this invention. 本発明の第1の実施形態に係る液晶表示装置の製造方法を説明するための断面図である。It is sectional drawing for demonstrating the manufacturing method of the liquid crystal display device which concerns on the 1st Embodiment of this invention. 本発明の第1の実施形態に係る液晶表示装置の製造方法を説明するための断面図である。It is sectional drawing for demonstrating the manufacturing method of the liquid crystal display device which concerns on the 1st Embodiment of this invention. 本発明の第1の実施形態に係る液晶表示装置の製造方法を説明するための断面図である。It is sectional drawing for demonstrating the manufacturing method of the liquid crystal display device which concerns on the 1st Embodiment of this invention. 本発明の第1の実施形態に係る液晶表示装置の製造方法を説明するための断面図である。It is sectional drawing for demonstrating the manufacturing method of the liquid crystal display device which concerns on the 1st Embodiment of this invention. 本発明の第1の実施形態に係る液晶表示装置の製造方法を説明するための断面図である。It is sectional drawing for demonstrating the manufacturing method of the liquid crystal display device which concerns on the 1st Embodiment of this invention. 本発明の第1の実施形態に係る液晶表示装置の製造方法を説明するための断面図である。It is sectional drawing for demonstrating the manufacturing method of the liquid crystal display device which concerns on the 1st Embodiment of this invention. 本発明の第1の実施形態に係る液晶表示装置の製造方法を説明するための断面図である。It is sectional drawing for demonstrating the manufacturing method of the liquid crystal display device which concerns on the 1st Embodiment of this invention. 本発明の第1の実施形態に係る液晶表示装置の製造方法を説明するための断面図である。It is sectional drawing for demonstrating the manufacturing method of the liquid crystal display device which concerns on the 1st Embodiment of this invention. 本発明の第2の実施形態に係る液晶表示装置を示す断面図である。It is sectional drawing which shows the liquid crystal display device which concerns on the 2nd Embodiment of this invention. 本発明の第2の実施形態に係る液晶表示装置の表示領域における積層基板の断面図である。It is sectional drawing of the laminated substrate in the display area of the liquid crystal display device which concerns on the 2nd Embodiment of this invention. 本発明の第3の実施形態に係る液晶表示装置を示す断面図である。It is sectional drawing which shows the liquid crystal display device which concerns on the 3rd Embodiment of this invention. 本発明の第3の実施形態に係る液晶表示装置の表示領域における積層基板の断面図である。It is sectional drawing of the multilayer substrate in the display area of the liquid crystal display device which concerns on the 3rd Embodiment of this invention. 本発明の実施形態に係るTFT基板の変形例を示す断面図である。It is sectional drawing which shows the modification of the TFT substrate which concerns on embodiment of this invention. 本発明の実施形態に係る液晶表示装置の変形例を示す断面図である。It is sectional drawing which shows the modification of the liquid crystal display device which concerns on embodiment of this invention. 本発明の実施形態に係る表示素子層の変形例を示す断面図である。It is sectional drawing which shows the modification of the display element layer which concerns on embodiment of this invention.

 (第1の実施形態)
 以下、本発明の実施形態を図面に基づいて詳細に説明する。なお、本実施形態においては、表示装置として液晶表示装置を例示する。
(First embodiment)
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the present embodiment, a liquid crystal display device is exemplified as the display device.

 図1は、本発明の第1の実施形態に係る液晶表示装置を示す平面図であり、図2は、本発明の第1の実施形態に係る液晶表示装置を示す断面図であり、図1のA-A断面図である。また、図3は、本発明の第1の実施形態に係る液晶表示装置を示す断面図であり、図1のB-B断面図である。また、図4は、本発明の第1の実施形態に係る液晶表示装置を示す断面図であり、図1のC-C断面図である。 FIG. 1 is a plan view showing a liquid crystal display device according to the first embodiment of the present invention, and FIG. 2 is a cross-sectional view showing the liquid crystal display device according to the first embodiment of the present invention. FIG. FIG. 3 is a cross-sectional view showing the liquid crystal display device according to the first embodiment of the present invention, and is a cross-sectional view taken along the line BB of FIG. FIG. 4 is a cross-sectional view showing the liquid crystal display device according to the first embodiment of the present invention, and is a cross-sectional view taken along the line CC of FIG.

 図1、図2に示すように、液晶表示装置1は、半導体素子であるTFT(Thin-Film Transistor)素子が複数形成された表示装置用基板であるTFT基板2と、TFT基板2に対向して配置された他の表示装置用基板であるCF基板3とを備えている。 As shown in FIG. 1 and FIG. 2, the liquid crystal display device 1 is opposed to the TFT substrate 2, which is a substrate for a display device in which a plurality of thin film transistors (TFTs) as semiconductor elements are formed, and the TFT substrate 2. And a CF substrate 3 which is another display device substrate.

 また、液晶表示装置1は、TFT基板2及びCF基板3の間に挟持して設けられた表示媒体層である液晶層4と、TFT基板2とCF基板3との間に狭持され、TFT基板2及びCF基板3を互いに接着するとともに液晶層4を封入するために枠状に設けられたシール材5とを備えている。 Further, the liquid crystal display device 1 is sandwiched between a liquid crystal layer 4 which is a display medium layer sandwiched between the TFT substrate 2 and the CF substrate 3, and the TFT substrate 2 and the CF substrate 3. The substrate 2 and the CF substrate 3 are bonded to each other, and a sealing material 5 provided in a frame shape is provided to enclose the liquid crystal layer 4.

 このシール材5は、液晶層4を周回するように形成されており、TFT基板2とCF基板3は、このシール材5を介して相互に貼り合わされている。 The sealing material 5 is formed so as to circulate around the liquid crystal layer 4, and the TFT substrate 2 and the CF substrate 3 are bonded to each other via the sealing material 5.

 なお、TFT基板2及びCF基板3は、それぞれ矩形板状に形成されている。また、液晶表示装置1は、液晶層4の厚み(即ち、セルギャップ)を規制するための複数のフォトスペーサ(不図示)を備えている。 The TFT substrate 2 and the CF substrate 3 are each formed in a rectangular plate shape. In addition, the liquid crystal display device 1 includes a plurality of photo spacers (not shown) for regulating the thickness of the liquid crystal layer 4 (that is, the cell gap).

 TFT基板2は、樹脂材料により形成されたフィルム状の可撓性(フレキシビリティー)を有するプラスチック基板6を備える。このプラスチック基板6を形成する樹脂材料としては、例えば、ポリイミド樹脂、ポリパラキシレン樹脂、アクリル樹脂等の有機材料を用いることができる。 The TFT substrate 2 includes a plastic substrate 6 having a film-like flexibility formed from a resin material. As a resin material for forming the plastic substrate 6, for example, an organic material such as polyimide resin, polyparaxylene resin, or acrylic resin can be used.

 また、TFT基板2のプラスチック基板6上には、TFT素子等を備えた表示素子層7が形成されている。 Further, on the plastic substrate 6 of the TFT substrate 2, a display element layer 7 provided with TFT elements and the like is formed.

 ここで、表示素子層7は、プラスチック基板6上に互いに平行に延びる複数のゲート線(不図示)と、各ゲート線に直交するように互いに平行に延びる複数のソース線(不図示)と、ゲート線及びソース線の各交差部分にそれぞれ設けられた半導体素子であるTFT素子(不図示)と、各TFT素子にそれぞれ接続された複数の画素電極(不図示)とを備えている。 Here, the display element layer 7 includes a plurality of gate lines (not shown) extending in parallel with each other on the plastic substrate 6, and a plurality of source lines (not shown) extending in parallel with each other so as to be orthogonal to the gate lines. A TFT element (not shown) which is a semiconductor element provided at each intersection of the gate line and the source line, and a plurality of pixel electrodes (not shown) respectively connected to the TFT elements are provided.

 また、CF基板3は、TFT基板2と同様に、樹脂材料により形成されたフィルム状の可撓性(フレキシビリティー)を有するプラスチック基板8を備える。このプラスチック基板8を形成する樹脂材料としては、上述のプラスチック基板6を形成する有機材料と同様の材料を使用することができる。 Further, the CF substrate 3 includes a plastic substrate 8 having a film-like flexibility (flexibility) formed of a resin material, like the TFT substrate 2. As the resin material for forming the plastic substrate 8, the same material as the organic material for forming the plastic substrate 6 described above can be used.

 また、CF基板3のプラスチック基板8上には、CF素子層19が形成されている。ここで、CF素子層19は、TFT基板2上の各画素電極に対応して、各々、赤色、緑色又は青色に着色された複数の着色層(不図示)と、各着色層の間に設けられたブラックマトリクス(不図示)とからなるカラーフィルターを備えている。 Further, a CF element layer 19 is formed on the plastic substrate 8 of the CF substrate 3. Here, the CF element layer 19 is provided between each colored layer and a plurality of colored layers (not shown) colored in red, green, or blue, corresponding to each pixel electrode on the TFT substrate 2. And a color filter including a black matrix (not shown).

 また、CF素子層19は、カラーフィルター上に設けられたオーバーコート層(不図示)と、オーバーコート層上に設けられた共通電極(不図示)と、共通電極上に設けられた配向膜(不図示)とを備えている。 The CF element layer 19 includes an overcoat layer (not shown) provided on the color filter, a common electrode (not shown) provided on the overcoat layer, and an alignment film (not shown) provided on the common electrode. (Not shown).

 なお、プラスチック基板6,8の厚みとしては、3~30μmが好ましい。これは、厚みが3μm未満の場合は、十分な機械的強度が得られない場合があり、また、30μmよりも大きい場合は、表示素子層7やCF素子層19を形成する際に、プラスチック基板6,8の反りが大きくなり、プロセス上、問題が生じる場合があるからである。 The thickness of the plastic substrates 6 and 8 is preferably 3 to 30 μm. If the thickness is less than 3 μm, sufficient mechanical strength may not be obtained. If the thickness is greater than 30 μm, a plastic substrate may be used when forming the display element layer 7 or the CF element layer 19. This is because the warpages of 6 and 8 become large and a problem may occur in the process.

 液晶層4は、例えば、電気光学特性を有するネマチック液晶を含んでいる。 The liquid crystal layer 4 includes, for example, nematic liquid crystal having electro-optical characteristics.

 また、液晶表示装置1では、図1、図2に示すように、シール材5の内側であって、TFT基板2及びCF基板3が重なる領域に、画像表示を行う表示領域Dが規定されている。ここで、表示領域Dは、画像の最小単位である画素がマトリクス状に複数配列して構成されている。 In the liquid crystal display device 1, as shown in FIGS. 1 and 2, a display area D for image display is defined in an area where the TFT substrate 2 and the CF substrate 3 overlap inside the sealing material 5. Yes. Here, the display area D is configured by arranging a plurality of pixels, which are the minimum unit of an image, in a matrix.

 また、図1に示すように、液晶表示装置1は矩形状に形成されるとともに、TFT基板2がその上辺においてCF基板3よりも突出しており、その突出した領域には、駆動回路領域Tが規定されている。この駆動回路領域Tは、図1に示すように、表示領域Dの周辺に設けられている。 Further, as shown in FIG. 1, the liquid crystal display device 1 is formed in a rectangular shape, and the TFT substrate 2 protrudes from the CF substrate 3 on the upper side thereof, and a drive circuit region T is formed in the protruding region. It is prescribed. The drive circuit region T is provided around the display region D as shown in FIG.

 また、図2に示すように、本実施形態の液晶表示装置1においては、駆動回路領域Tにおいて、駆動回路基板であるフレキシブルプリント基板24が設けられており、接着性を有する接着剤層16を介して、TFT基板2とフレキシブルプリント基板24とが貼り合わされる構成となっている。 As shown in FIG. 2, in the liquid crystal display device 1 of the present embodiment, a flexible printed circuit board 24 that is a drive circuit board is provided in the drive circuit region T, and an adhesive layer 16 having adhesiveness is provided. Accordingly, the TFT substrate 2 and the flexible printed circuit board 24 are bonded to each other.

 また、図1に示すように、液晶表示装置1は、表示領域Dの周辺に設けられた額縁領域Fを備えている。この額縁領域Fには、表示領域Dのゲート線を駆動する集積回路基板であるゲートドライバ基板23と、表示領域Dのソース線を駆動するソースドライバ基板26とが設けられている。 Further, as shown in FIG. 1, the liquid crystal display device 1 includes a frame region F provided around the display region D. In the frame region F, a gate driver substrate 23 that is an integrated circuit substrate that drives gate lines in the display region D and a source driver substrate 26 that drives source lines in the display region D are provided.

 また、図3に示すように、本実施形態の液晶表示装置1においては、額縁領域Fにおいて、接着性を有する接着剤層37を介して、TFT基板2とゲートドライバ基板23とが貼り合わされる構成となっている。 As shown in FIG. 3, in the liquid crystal display device 1 of the present embodiment, in the frame region F, the TFT substrate 2 and the gate driver substrate 23 are bonded together with an adhesive layer 37 having adhesiveness. It has a configuration.

 また、同様に、図4に示すように、本実施形態の液晶表示装置1においては、額縁領域Fにおいて、接着性を有する接着剤層18を介して、TFT基板2とソースドライバ基板26とが貼り合わされる構成となっている。 Similarly, as shown in FIG. 4, in the liquid crystal display device 1 of the present embodiment, in the frame region F, the TFT substrate 2 and the source driver substrate 26 are interposed via the adhesive layer 18 having adhesiveness. It becomes the composition to be pasted together.

 接着剤層16,18,37を構成する接着剤としては、特に限定されず、かかる接着剤としては、例えば、エポキシ樹脂、ブチラール樹脂、アクリル樹脂などの、各種の樹脂の接着剤が挙げられる。なお、この接着剤層16,18,37としては、熱硬化性樹脂や紫外線硬化性樹脂を使用することができる。 The adhesive constituting the adhesive layers 16, 18, and 37 is not particularly limited, and examples of the adhesive include adhesives of various resins such as an epoxy resin, a butyral resin, and an acrylic resin. As the adhesive layers 16, 18, and 37, a thermosetting resin or an ultraviolet curable resin can be used.

 ここで、本実施形態においては、図1、図2に示すように、TFT基板2の駆動回路領域Tにおいて、TFT基板2上の配線(即ち、表示素子層7に形成された配線)22からなる第1コイル9aが設けられるとともに、フレキシブルプリント基板24上の配線により形成され、第1コイル9aに対向して配置されて第1コイル9aと誘導性結合を行う第2コイル25が設けられている。 Here, in the present embodiment, as shown in FIGS. 1 and 2, in the drive circuit region T of the TFT substrate 2, the wiring 22 (that is, the wiring formed in the display element layer 7) 22 on the TFT substrate 2. And a second coil 25 that is formed by wiring on the flexible printed circuit board 24 and that is disposed opposite the first coil 9a and that performs inductive coupling with the first coil 9a. Yes.

 また、図1、図3に示すように、TFT基板2の額縁領域Fにおいて、TFT基板2上の配線(即ち、表示素子層7に形成された配線)22により形成された第1コイル9b,9cが設けられるとともに、ゲートドライバ基板23上の配線により形成され、第1コイル9b,9cに対向して配置されて第1コイル9b,9cと誘導性結合を行う第2コイル26a,26bが設けられている。 As shown in FIGS. 1 and 3, in the frame region F of the TFT substrate 2, the first coil 9b formed by the wiring 22 on the TFT substrate 2 (that is, the wiring formed in the display element layer 7), 9c is provided, and second coils 26a and 26b that are formed by wiring on the gate driver substrate 23 and are arranged to face the first coils 9b and 9c and perform inductive coupling with the first coils 9b and 9c are provided. It has been.

 更に、図1、図4に示すように、TFT基板2の額縁領域Fにおいて、TFT基板2上の配線(即ち、表示素子層7に形成された配線)22からなる第1コイル9d,9eが設けられるとともに、ソースドライバ基板26上の配線により形成され、第1コイル9d,9eに対向して配置されて第1コイル9d,9eと誘導性結合を行う第2コイル27a,27bが設けられている。 Further, as shown in FIGS. 1 and 4, in the frame region F of the TFT substrate 2, the first coils 9 d and 9 e made of wirings 22 on the TFT substrate 2 (that is, wirings formed on the display element layer 7) are provided. And second coils 27a and 27b that are formed by wiring on the source driver substrate 26 and are arranged to face the first coils 9d and 9e and inductively couple with the first coils 9d and 9e. Yes.

 そして、このような構成により、上記従来技術と異なり、異方導電性接着剤を使用することなく、誘導性結合により、フレキシブルプリント基板24、ゲートドライバ基板23、及びソースドライバ基板26と、TFT基板2に設けられたTFT素子との間において信号の伝達を行うことが可能になる。 With such a configuration, unlike the above-described conventional technique, the flexible printed circuit board 24, the gate driver board 23, the source driver board 26, and the TFT board are formed by inductive coupling without using an anisotropic conductive adhesive. Signals can be transmitted to and from the TFT elements provided in 2.

 より具体的には、まず、フレキシブルプリント基板24において、第2コイル25に接続された送信回路(不図示)を介して、送信用コイルとなる第2コイル25に信号(ゲートドライバ、及びソースドライバを駆動するための信号)が伝達され、この信号が第2コイル25と誘導性結合を行うTFT基板2の第1コイル9aへと伝達される。 More specifically, first, in the flexible printed circuit 24, signals (gate drivers and source drivers) are transmitted to the second coil 25 serving as a transmission coil via a transmission circuit (not shown) connected to the second coil 25. Is transmitted to the first coil 9a of the TFT substrate 2 that performs inductive coupling with the second coil 25.

 次いで、駆動回路領域Tに形成された第1コイル9aに入力された信号は、TFT基板2の額縁領域Fにおける第1コイル9b,9dを介して、送信用コイルとなる第1コイル9b,9dと誘導性結合を行う第2コイル26a,27aへと伝達される。 Next, the signal input to the first coil 9a formed in the drive circuit region T is transmitted through the first coils 9b and 9d in the frame region F of the TFT substrate 2 to the first coils 9b and 9d that serve as transmission coils. And transmitted to the second coils 26a and 27a that perform inductive coupling.

 そして、ゲートドライバ基板23において、第2コイル26a,26bに接続されたドライバ回路(不図示)を介して、送信用コイルとなる第2コイル26bに、ゲート信号が伝達され、このゲート信号が第2コイル26bと誘導性結合を行うTFT基板2の第1コイル9cへと伝達される。 In the gate driver substrate 23, a gate signal is transmitted to the second coil 26b serving as a transmission coil via a driver circuit (not shown) connected to the second coils 26a and 26b. The two coils 26b are transmitted to the first coil 9c of the TFT substrate 2 that performs inductive coupling.

 また、同様に、ソースドライバ基板26において、第2コイル27a,27bに接続されたドライバ回路(不図示)を介して、送信用コイルとなる第2コイル27bに、ソース信号が伝達され、このソース信号が第2コイル27bと誘導性結合を行うTFT基板2の第1コイル9eへと伝達される。 Similarly, in the source driver board 26, a source signal is transmitted to the second coil 27b serving as a transmission coil via a driver circuit (not shown) connected to the second coils 27a and 27b. The signal is transmitted to the first coil 9e of the TFT substrate 2 that performs inductive coupling with the second coil 27b.

 そして、液晶表示装置1では、各画素において、ゲートドライバ基板23からゲート信号がゲート線を介してTFT素子のゲート電極に送られて、TFT素子がオン状態になったときに、ソースドライバ基板26からソース信号がソース線を介してTFT素子のソース電極に送られて、TFT素子の半導体層及びドレイン電極を介して、画素電極に所定の電荷が書き込まれる。 In the liquid crystal display device 1, in each pixel, when the gate signal is sent from the gate driver substrate 23 to the gate electrode of the TFT element through the gate line, and the TFT element is turned on, the source driver substrate 26. A source signal is sent to the source electrode of the TFT element via the source line, and a predetermined charge is written to the pixel electrode via the semiconductor layer and drain electrode of the TFT element.

 この際、TFT基板2の各画素電極とCF基板3の共通電極との間において電位差が生じ、液晶層4、すなわち、各画素の液晶容量、及びその液晶容量に並列に接続された補助容量に所定の電圧が印加される。 At this time, a potential difference is generated between each pixel electrode of the TFT substrate 2 and the common electrode of the CF substrate 3, and the liquid crystal layer 4, that is, the liquid crystal capacitance of each pixel and the auxiliary capacitance connected in parallel to the liquid crystal capacitance. A predetermined voltage is applied.

 そして、液晶表示装置1では、各画素において、液晶層4に印加する電圧の大きさによって液晶層4の配向状態を変えることにより、液晶層4の光透過率を調整して画像が表示される構成となっている。 In the liquid crystal display device 1, an image is displayed by adjusting the light transmittance of the liquid crystal layer 4 by changing the alignment state of the liquid crystal layer 4 according to the magnitude of the voltage applied to the liquid crystal layer 4 in each pixel. It has a configuration.

 本実施形態においては、このような構成により、TFT基板2と回路基板(即ち、フレキシブルプリント基板24、ゲートドライバ基板23、ソースドライバ基板26)との間における信号の伝達不良を防止することが可能になるため、フィルム状の可撓性を有するプラスチック基板6を備えるTFT基板2への回路基板の実装歩留まりを向上させることが可能になる。 In the present embodiment, with such a configuration, it is possible to prevent a signal transmission failure between the TFT substrate 2 and the circuit board (that is, the flexible printed board 24, the gate driver board 23, and the source driver board 26). Therefore, it becomes possible to improve the yield of mounting the circuit board on the TFT substrate 2 including the film-like flexible plastic substrate 6.

 また、上記従来技術と異なり、高価な異方導電性接着剤を使用する必要がなくなるため、コストダウンを図ることが可能になる。 In addition, unlike the above-described conventional technology, it is not necessary to use an expensive anisotropic conductive adhesive, so that the cost can be reduced.

 更に、コイル間において、誘導性結合により非接触で信号の伝達を行う構成であるため、TFT基板2に対する衝撃が発生したり、TFT基板2を屈曲させて使用する場合であっても、TFT基板2と回路基板との間における信号の伝達を確保することが可能になる。 Furthermore, since the signal is transmitted between the coils in a non-contact manner by inductive coupling, even if the TFT substrate 2 is impacted or the TFT substrate 2 is bent and used, the TFT substrate It is possible to ensure signal transmission between the circuit board 2 and the circuit board.

 次に、本発明の実施形態に係る液晶表示装置の製造方法について説明する。図5~図16は、本発明の第1の実施形態に係る液晶表示装置の製造方法を説明するための断面図である。尚、以下に示す製造方法は単なる例示であり、本発明に係る液晶表示装置は以下に示す方法により製造されたものに限定されるものではない。 Next, a method for manufacturing a liquid crystal display device according to an embodiment of the present invention will be described. 5 to 16 are cross-sectional views for explaining the method of manufacturing the liquid crystal display device according to the first embodiment of the present invention. The manufacturing method shown below is merely an example, and the liquid crystal display device according to the present invention is not limited to the one manufactured by the method shown below.

 <TFT基板作製工程>
 まず、図5に示すように、支持基板として、例えば、厚さ0.7mm程度のガラス基板17を準備する。
<TFT substrate manufacturing process>
First, as shown in FIG. 5, for example, a glass substrate 17 having a thickness of about 0.7 mm is prepared as a support substrate.

 次いで、図5に示すように、ガラス基板17上に、例えば、ポリイミド樹脂により形成されたフィルム状の可撓性を有するプラスチック基板6を、スピンコート法やスリットコート法により、例えば、20μm程度の厚みで形成する。 Next, as shown in FIG. 5, a film-like flexible plastic substrate 6 formed of, for example, a polyimide resin on a glass substrate 17 is, for example, about 20 μm by spin coating or slit coating. Form with thickness.

 次いで、プラスチック基板6上に、TFT素子、画素電極、第1コイル9a~9e等をパターニングして、図5~図7に示すように、表示素子層7を形成する。次いで、基板全体に、印刷法によりポリイミド樹脂を塗布し、その後、ラビング処理を行って、配向膜を形成する。次いで、基板全体に、例えば、球状のシリカやプラスチック粒子を散布して、スペーサを形成する。 Next, on the plastic substrate 6, TFT elements, pixel electrodes, first coils 9a to 9e, etc. are patterned to form the display element layer 7 as shown in FIGS. Next, a polyimide resin is applied to the entire substrate by a printing method, and then a rubbing process is performed to form an alignment film. Next, for example, spherical silica or plastic particles are dispersed over the entire substrate to form spacers.

 以上のようにして、表示領域D、端子領域T、及び額縁領域Fを構成するTFT基板2を作製することができる。 As described above, the TFT substrate 2 constituting the display region D, the terminal region T, and the frame region F can be manufactured.

 <CF基板作製工程>
 まず、図8に示すように、支持基板として、例えば、厚さ0.7mm程度のガラス基板20を準備する。次いで、図8に示すように、ガラス基板20上に、例えば、ポリイミド樹脂により形成されたフィルム状の可撓性を有するプラスチック基板8を、スピンコート法やスリットコート法により、例えば、20μm程度の厚みで形成する。
<CF substrate manufacturing process>
First, as shown in FIG. 8, for example, a glass substrate 20 having a thickness of about 0.7 mm is prepared as a support substrate. Next, as shown in FIG. 8, a film-like flexible plastic substrate 8 formed of, for example, polyimide resin on a glass substrate 20 is, for example, about 20 μm by spin coating or slit coating. Form with thickness.

 次いで、プラスチック基板8上に、着色層及びブラックマトリクスを備えたカラーフィルターを形成するとともに、オーバーコート層、共通電極等をパターニングして、CF素子層19を形成する。その後、基板全体に、印刷法によりポリイミド樹脂を塗布し、ラビング処理を行って、配向膜を形成することにより、表示領域Dを構成するCF基板3を作製する。 Next, a color filter including a colored layer and a black matrix is formed on the plastic substrate 8, and an overcoat layer, a common electrode, and the like are patterned to form a CF element layer 19. Thereafter, a polyimide resin is applied to the entire substrate by a printing method, a rubbing process is performed, and an alignment film is formed, whereby the CF substrate 3 constituting the display region D is manufactured.

 なお、ブラックマトリクスは、Ta(タンタル)、Cr(クロム)、Mo(モリブデン)、Ni(ニッケル)、Ti(チタン)、Cu(銅)、Al(アルミニウム)などの金属材料、カーボンなどの黒色顔料が分散された樹脂材料、または、各々、光透過性を有する複数色の着色層が積層された樹脂材料などにより形成される。 The black matrix is made of metal materials such as Ta (tantalum), Cr (chromium), Mo (molybdenum), Ni (nickel), Ti (titanium), Cu (copper), and Al (aluminum), and black pigments such as carbon. Are dispersed or a resin material in which a plurality of colored layers having light transmittance are laminated.

 <TFT基板・CF基板貼り合わせ工程>
 まず、例えば、ディスペンサを用いて、CF基板3に、紫外線硬化及び熱硬化併用型樹脂等により構成されたシール材5を枠状に描画する。
<TFT substrate / CF substrate bonding process>
First, for example, using a dispenser, the sealing material 5 made of ultraviolet curing and thermosetting resin or the like is drawn on the CF substrate 3 in a frame shape.

 次いで、上記シール材5が描画されたCF基板3におけるシール材5の内側の領域に液晶層4を形成する液晶材料を滴下する。 Next, a liquid crystal material for forming the liquid crystal layer 4 is dropped on a region inside the sealing material 5 in the CF substrate 3 on which the sealing material 5 is drawn.

 さらに、上記液晶材料が滴下されたCF基板3と、TFT基板2とを、減圧下で貼り合わせる。 Further, the CF substrate 3 onto which the liquid crystal material is dropped and the TFT substrate 2 are bonded together under reduced pressure.

 次いで、その貼り合わせた貼合体を大気圧に開放することにより、その貼合体の表面及び裏面を加圧する。次いで、上記貼合体に挟持されたシール材5にUV光を照射した後に、その貼合体を加熱することによりシール材5を硬化させ、図9に示すように、TFT基板2とCF基板3とが貼り合わされた貼り合わせ体を作製する。 Next, the front and back surfaces of the bonded body are pressurized by releasing the bonded body to atmospheric pressure. Next, after irradiating the sealing material 5 sandwiched between the bonded bodies with UV light, the sealing material 5 is cured by heating the bonded body, and as shown in FIG. 9, the TFT substrate 2 and the CF substrate 3 A bonded body in which is bonded is produced.

 <回路基板接続工程>
 次いで、端子領域Tにおいて、フレキシブルプリント基板24を下向き(フェースダウン)にした状態で、TFT基板2に形成された第1コイル9aと、フレキシブルプリント基板24に形成された第2コイル25とが誘導性結合を行うように、第1コイル9aと第2コイル25とを対向して配置させる。そして、TFT基板2とフレキシブルプリント基板24との間に接着剤層16を介在させた状態で、TFT基板2とフレキシブルプリント基板24との位置合わせを行う。
<Circuit board connection process>
Next, in the terminal region T, the first coil 9a formed on the TFT substrate 2 and the second coil 25 formed on the flexible printed circuit board 24 are guided with the flexible printed circuit board 24 facing down (face down). The first coil 9a and the second coil 25 are arranged to face each other so as to perform sexual coupling. Then, the TFT substrate 2 and the flexible printed circuit board 24 are aligned with the adhesive layer 16 interposed between the TFT substrate 2 and the flexible printed circuit board 24.

 次いで、図10に示すように、接着剤層16上に、フレキシブルプリント基板24に形成された第2コイル25を載置する。そして、接着剤層16を所定の硬化温度に加熱した状態で、フレキシブルプリント基板24を介して、接着剤層16をTFT基板2の方向へ所定の圧力で加圧することにより、接着剤層16を加熱溶融させ、接着剤層16を介して、第1コイル9aと第2コイル25とを対向させて設ける。 Next, as shown in FIG. 10, the second coil 25 formed on the flexible printed circuit board 24 is placed on the adhesive layer 16. Then, in a state where the adhesive layer 16 is heated to a predetermined curing temperature, the adhesive layer 16 is pressed with a predetermined pressure toward the TFT substrate 2 via the flexible printed circuit board 24, whereby the adhesive layer 16 is The first coil 9a and the second coil 25 are provided to face each other through the adhesive layer 16 by heating and melting.

 そうすると、端子領域Tにおいて、接着剤層16を介して、TFT基板2とフレキシブルプリント基板24とが貼り合わされるとともに、第1コイル9aと第2コイル25とにより誘導性結合が行われ、TFT基板2とフレキシブルプリント基板24とが導通することになる。 Then, in the terminal region T, the TFT substrate 2 and the flexible printed circuit board 24 are bonded to each other through the adhesive layer 16, and inductive coupling is performed by the first coil 9 a and the second coil 25. 2 and the flexible printed circuit board 24 are electrically connected.

 また、額縁領域Fにおいて、ゲートドライバ基板23を下向き(フェースダウン)にした状態で、TFT基板2に形成された第1コイル9b,9cと、ゲートドライバ基板23に形成された第2コイル26a,26bとが誘導性結合を行うように、第1コイル9bと第2コイル26a、及び第1コイル9cと第2コイル26bとを対向して配置させる。そして、TFT基板2とゲートドライバ基板23との間に接着剤層37を介在させた状態で、TFT基板2とゲートドライバ基板23との位置合わせを行う。 In the frame region F, the first coil 9b, 9c formed on the TFT substrate 2 and the second coil 26a formed on the gate driver substrate 23 with the gate driver substrate 23 facing down (face down), The first coil 9b and the second coil 26a, and the first coil 9c and the second coil 26b are arranged to face each other so that the inductive coupling is performed with the 26b. Then, the TFT substrate 2 and the gate driver substrate 23 are aligned with the adhesive layer 37 interposed between the TFT substrate 2 and the gate driver substrate 23.

 また、同様に、額縁領域Fにおいて、ソースドライバ基板26を下向き(フェースダウン)にした状態で、TFT基板2に形成された第1コイル9d,9eと、ソースドライバ基板26に形成された第2コイル27a,27bとが誘導性結合を行うように、第1コイル9dと第2コイル27a、及び第1コイル9eと第2コイル27bとを対向して配置させる。そして、TFT基板2とソースドライバ基板26との間に接着剤層18を介在させた状態で、TFT基板2とソースドライバ基板26との位置合わせを行う。 Similarly, in the frame region F, the first coil 9d, 9e formed on the TFT substrate 2 and the second coil formed on the source driver substrate 26 with the source driver substrate 26 facing down (face down). The first coil 9d and the second coil 27a, and the first coil 9e and the second coil 27b are arranged to face each other so that the coils 27a and 27b perform inductive coupling. Then, the TFT substrate 2 and the source driver substrate 26 are aligned with the adhesive layer 18 interposed between the TFT substrate 2 and the source driver substrate 26.

 次いで、図11、図12に示すように、接着剤層37上に、ゲートドライバ基板23に形成された第2コイル26a,26bを載置するとともに、接着剤層18上に、ソースドライバ基板26に形成された第2コイル27a,27bを載置する。 Next, as shown in FIGS. 11 and 12, the second coils 26 a and 26 b formed on the gate driver substrate 23 are placed on the adhesive layer 37, and the source driver substrate 26 is placed on the adhesive layer 18. The second coils 27a and 27b formed in the above are placed.

 そして、接着剤層18,37を所定の硬化温度に加熱した状態で、ゲートドライバ基板23、及びソースドライバ基板26を介して、接着剤層18,37をTFT基板2の方向へ所定の圧力で加圧することにより、接着剤層18,37を加熱溶融させる。そして、接着剤層18,37を介して、第1コイル9b~9eと第2コイル26a,26b,27a,27bとを各々対向させて設ける。 Then, with the adhesive layers 18 and 37 heated to a predetermined curing temperature, the adhesive layers 18 and 37 are moved toward the TFT substrate 2 with a predetermined pressure via the gate driver substrate 23 and the source driver substrate 26. By applying pressure, the adhesive layers 18 and 37 are heated and melted. The first coils 9b to 9e and the second coils 26a, 26b, 27a, and 27b are provided to face each other with the adhesive layers 18 and 37 interposed therebetween.

 そうすると、額縁領域Fにおいて、接着剤層18,37を介して、TFT基板2とゲートドライバ基板23及びソースドライバ基板26とが貼り合わされるとともに、第1コイル9b~9eと第2コイル26a,26b,27a,27bとにより誘導性結合が行われ、TFT基板2とゲートドライバ基板23及びソースドライバ基板26とが導通することになる。 Then, in the frame region F, the TFT substrate 2, the gate driver substrate 23, and the source driver substrate 26 are bonded to each other via the adhesive layers 18 and 37, and the first coils 9b to 9e and the second coils 26a and 26b. 27a and 27b, inductive coupling is performed, and the TFT substrate 2, the gate driver substrate 23, and the source driver substrate 26 are brought into conduction.

 <ガラス板剥離工程>
 次いで、図13~図15に示すように、ガラス基板17側からレーザ光(図13~図15における矢印)を照射することにより、ガラス基板17を剥離させる。ここで、ガラス基板17の除去は、レーザ光照射による剥離でなくても良い。例えば、研磨及びエッチング装置を用いてガラス基板17を除去しても良い。
<Glass plate peeling process>
Next, as shown in FIGS. 13 to 15, the glass substrate 17 is peeled off by irradiating laser light (arrows in FIGS. 13 to 15) from the glass substrate 17 side. Here, the removal of the glass substrate 17 may not be peeling by laser light irradiation. For example, the glass substrate 17 may be removed using a polishing and etching apparatus.

 ここで、上記従来の異方導電性接着剤層を介して、フレキシブルプリント基板等の回路基板に形成された端子とTFT基板に形成された端子とを接続する方法においては、レーザ光照射によるガラス基板の剥離の際に、プラスチック基板とガラス基板との境界部分に応力が作用し、プラスチック基板において反りやうねり等の変形が発生する。 Here, in a method of connecting a terminal formed on a circuit board such as a flexible printed circuit board and a terminal formed on a TFT substrate through the above-described conventional anisotropic conductive adhesive layer, glass by laser light irradiation is used. When the substrate is peeled off, stress acts on the boundary portion between the plastic substrate and the glass substrate, and deformation such as warpage or undulation occurs in the plastic substrate.

 そして、このような反りやうねり等の変形が発生すると、導電性粒子による端子間の接続が解除されてしまい、結果として、フレキシブルプリント基板に形成された端子とTFT基板に形成された端子との間で接続不良が生じ、信号の伝達不良が生じてしまうという問題があった。 And when such deformations such as warping and undulation occur, the connection between the terminals due to the conductive particles is released, and as a result, the terminals formed on the flexible printed circuit board and the terminals formed on the TFT circuit board There was a problem that a connection failure occurred between them, and a signal transmission failure occurred.

 一方、本実施形態においては、異方導電性接着剤層を使用することなく、誘導性結合により、回路基板とTFT基板2との間において信号の伝達を行う。従って、レーザ光照射によるガラス基板17の剥離の際に、プラスチック基板6とガラス基板17との境界部分に応力が作用し、プラスチック基板6において反りやうねり等の変形が発生した場合であっても、信号の伝達を行うことが可能になる。 On the other hand, in this embodiment, signals are transmitted between the circuit board and the TFT substrate 2 by inductive coupling without using an anisotropic conductive adhesive layer. Therefore, even when the glass substrate 17 is peeled off by laser light irradiation, stress acts on the boundary portion between the plastic substrate 6 and the glass substrate 17, and deformation such as warpage or undulation occurs in the plastic substrate 6. Signal transmission can be performed.

 次いで、図16に示すように、ガラス基板20側からレーザ光(図16における矢印)を照射することにより、ガラス基板20を剥離させる。ここで、ガラス基板20の除去は、上述のガラス基板17の場合と同様に、レーザ光照射による剥離でなくても良い。例えば、研磨及びエッチング装置を用いてガラス基板20を除去しても良い。 Next, as shown in FIG. 16, the glass substrate 20 is peeled off by irradiating laser light (arrows in FIG. 16) from the glass substrate 20 side. Here, the removal of the glass substrate 20 may not be peeling by laser light irradiation, as in the case of the glass substrate 17 described above. For example, the glass substrate 20 may be removed using a polishing and etching apparatus.

 そして、偏光板(不図示)及びバックライトユニット(不図示)を設けて、図1~図4に示す液晶表示装置1が完成する。 Then, a polarizing plate (not shown) and a backlight unit (not shown) are provided to complete the liquid crystal display device 1 shown in FIGS.

 なお、リジッドなLSIチップを積層することにより構成され、コイルによる誘導性結合により、各LSIチップ間における信号の伝達を行う半導体装置(電子回路)が開示されている(例えば、特開2005-228981号公報)。 In addition, a semiconductor device (electronic circuit) configured by laminating rigid LSI chips and transmitting signals between the LSI chips by inductive coupling using a coil is disclosed (for example, JP-A-2005-228981). Issue gazette).

 このようなLSIチップにおいては、一般に、シリコン基板等のリジッドな基板上に半導体素子と通信用のコイルが形成されており、上記従来の半導体装置を製造する際には、まず、シリコン基板上に、半導体素子と通信用のコイルとを形成した後に、シリコン基板の、半導体素子とコイルが形成されている側と反対側を機械的に研磨して、シリコン基板の厚みを50μm程度にする。次いで、接着剤層を介して、半導体素子とコイルとが形成された各LSIチップを接着することにより、複数のLSIチップが積層された半導体装置が製造される。 In such an LSI chip, generally, a semiconductor element and a communication coil are formed on a rigid substrate such as a silicon substrate. When manufacturing the conventional semiconductor device, first, on the silicon substrate. After the semiconductor element and the communication coil are formed, the silicon substrate is mechanically polished on the side opposite to the side where the semiconductor element and the coil are formed, so that the thickness of the silicon substrate is about 50 μm. Next, each LSI chip on which the semiconductor element and the coil are formed is bonded via an adhesive layer, whereby a semiconductor device in which a plurality of LSI chips are stacked is manufactured.

 ここで、このようなリジッドな基板を使用した半導体装置においては、上述の機械的研磨工程により、製造工程が長時間化するとともに、コストアップになるという問題があった。 Here, in the semiconductor device using such a rigid substrate, the above-described mechanical polishing process has a problem that the manufacturing process takes a long time and costs are increased.

 また、研磨により薄膜化したシリコン基板は破損しやすいという問題があった。 Also, there was a problem that the silicon substrate thinned by polishing was easily damaged.

 また、研磨により薄膜化したシリコン基板は、劈開する性質を有しているため、接着剤層による接着工程において、わずかなクラックの存在により、破損が広範囲に広がってしまい、その結果、半導体装置の歩留まりが低下して、コストアップになるという問題があった。 In addition, since the silicon substrate thinned by polishing has a property of cleaving, in the bonding process with the adhesive layer, the presence of slight cracks causes the damage to spread over a wide range. There was a problem that the yield decreased and the cost increased.

 また、一般に、コイル間の誘導結合強度は、コイル間距離の平方に比例して減少するため、消費電力を削減するためには、シリコン基板の厚みを小さくして、コイル間の距離を短くする必要がある。しかし、シリコン基板の厚みを小さくすると、シリコン基板の取り扱い性が低下するとともに、上述のごとく、研磨工程が長時間化するため、シリコン基板の厚みを十分に小さくすることができず、結果として、消費電力を削減することが困難であった。 In general, the inductive coupling strength between the coils decreases in proportion to the square of the distance between the coils. Therefore, in order to reduce power consumption, the thickness of the silicon substrate is reduced and the distance between the coils is shortened. There is a need. However, when the thickness of the silicon substrate is reduced, the handleability of the silicon substrate is reduced, and as described above, the polishing process takes a long time, so the thickness of the silicon substrate cannot be sufficiently reduced. It was difficult to reduce power consumption.

 更に、隣接するコイルに起因してクロストークが発生する場合があり、このクロストークの発生を抑制するためには、隣接するコイル間の距離をある程度確保する必要がある。ここで、一般に、コイルが相互に影響し合う部分でクロストーク強度が0になる点は、通信を行うコイル間の距離に依存する。即ち、通信を行うコイル間の距離が小さい程、隣接するコイル間の距離を小さくして、クロストークの発生を抑制することが可能になる。従って、コイルの設置密度はシリコン基板の厚みにも依存すると考えられるが(T. Kuroda, “System LSI: Challenges and Opportunities” IEICE TRANS. ELECTRON., VOL89-C, NO.3 Mar. 2006参照)、上述のごとく、シリコン基板の厚みを小さくすると、シリコン基板の取り扱い性が低下するとともに、研磨工程が長時間化する。従って、シリコン基板の厚みを十分に小さくすることができず、結果として、クロストークの発生を抑制することが困難であった。 Furthermore, crosstalk may occur due to adjacent coils. In order to suppress the occurrence of this crosstalk, it is necessary to secure a certain distance between the adjacent coils. Here, in general, the point where the crosstalk intensity becomes 0 at the portion where the coils influence each other depends on the distance between the coils performing communication. That is, the smaller the distance between the coils that perform communication, the smaller the distance between adjacent coils, thereby suppressing the occurrence of crosstalk. Therefore, it is considered that the coil installation density depends on the thickness of the silicon substrate (see T. Kuroda, “System LSI: Challenges and Opportunities” IEICE TRANS. ELECTRON., VOL89-C, NO.3 Mar. 2006). As described above, when the thickness of the silicon substrate is reduced, the handleability of the silicon substrate is lowered and the polishing process takes a long time. Therefore, the thickness of the silicon substrate cannot be made sufficiently small, and as a result, it is difficult to suppress the occurrence of crosstalk.

 一方、本発明においては、上述のごとく、ガラス基板17上に、例えば、ポリイミド樹脂により形成されたフィルム状の可撓性を有するプラスチック基板6を、スピンコート法やスリットコート法により形成する際に、スピンコーターの設定値、またはスリットコーターの設定値を変更するのみで、プラスチック基板6の厚みを制御することができる。更に、レーザ光の照射により、ガラス基板17を剥離することにより、半導体素子を有する表示素子層7と第1コイル9a~9eとが設けられた厚みの小さい(例えば、20μm程度)プラスチック基板6を形成することができる。従って、上記従来の半導体装置とは異なり、基板の機械的研磨が不要になるため、製造工程の長時間化を防止することが可能になるとともに、コストアップを抑制することが可能になる。 On the other hand, in the present invention, as described above, on the glass substrate 17, for example, when the film-like flexible plastic substrate 6 formed of a polyimide resin is formed by a spin coat method or a slit coat method. The thickness of the plastic substrate 6 can be controlled only by changing the set value of the spin coater or the set value of the slit coater. Further, the plastic substrate 6 having a small thickness (for example, about 20 μm) provided with the display element layer 7 having semiconductor elements and the first coils 9a to 9e is removed by peeling the glass substrate 17 by laser light irradiation. Can be formed. Therefore, unlike the above-described conventional semiconductor device, mechanical polishing of the substrate is not necessary, so that it is possible to prevent the manufacturing process from being lengthened and to suppress an increase in cost.

 また、プラスチック基板6は可撓性を有するため、厚みが小さい場合であっても、ガラス基板と異なり、取り扱い性を低下させることなく、プラスチック基板6の破損を防止することが可能になる。 Further, since the plastic substrate 6 has flexibility, even if the thickness is small, unlike the glass substrate, it is possible to prevent the plastic substrate 6 from being damaged without deteriorating the handleability.

 また、研磨により薄膜化したシリコン基板と異なり、プラスチック基板6は劈開する性質を有していないため、接着剤層16,18,37による回路基板接続工程において、プラスチック基板6にクラックが生じている場合であっても、破損が広範囲に広がることを防止することができる。その結果、液晶表示装置1の歩留まりの低下を防止して、コストアップを抑制することが可能になる。 In addition, unlike the silicon substrate thinned by polishing, the plastic substrate 6 does not have the property of cleaving, and therefore the plastic substrate 6 is cracked in the circuit substrate connecting process using the adhesive layers 16, 18, and 37. Even in this case, the damage can be prevented from spreading over a wide range. As a result, it is possible to prevent a decrease in yield of the liquid crystal display device 1 and to suppress an increase in cost.

 また、上述のごとく、プラスチック基板6の厚みを小さくした場合であっても、プラスチック基板6の取り扱い性が低下せず、また、製造工程の長時間化を防止することができるため、プラスチック基板6の厚みを十分に小さくすることができる。その結果、コイル間の誘導結合に使用する消費電力を削減することが可能になる。また、クロストークの発生を抑制するために、通信を行うコイル間の距離を小さくすることが可能(より具体的には、シリコン基板を使用する場合の10分の1程度の距離にすることが可能)になるため、コイルの設置密度を向上させることが可能になる。 Further, as described above, even when the thickness of the plastic substrate 6 is reduced, the handling property of the plastic substrate 6 is not deteriorated, and the manufacturing process can be prevented from taking a long time. Can be sufficiently reduced in thickness. As a result, it is possible to reduce power consumption used for inductive coupling between the coils. Further, in order to suppress the occurrence of crosstalk, the distance between coils for communication can be reduced (more specifically, the distance can be reduced to about one-tenth that when a silicon substrate is used). Therefore, the installation density of the coil can be improved.

 (第2の実施形態)
 次に、本発明の第2の実施形態について説明する。図17は、本発明の第2の実施形態に係る液晶表示装置を示す断面図であり、図18は、本発明の第2の実施形態に係る液晶表示装置の表示領域における積層基板の断面図である。
(Second Embodiment)
Next, a second embodiment of the present invention will be described. FIG. 17 is a cross-sectional view showing a liquid crystal display device according to the second embodiment of the present invention, and FIG. 18 is a cross-sectional view of the multilayer substrate in the display region of the liquid crystal display device according to the second embodiment of the present invention. It is.

 なお、本実施形態においては、上記第1の実施形態と同様の構成部分については同一の符号を付してその説明を省略する。また、液晶表示装置の全体構成については、上述の第1の実施形態において説明したものと同様であるため、ここでは詳しい説明を省略する。 In the present embodiment, the same components as those in the first embodiment are denoted by the same reference numerals and description thereof is omitted. Further, the overall configuration of the liquid crystal display device is the same as that described in the first embodiment, and therefore detailed description thereof is omitted here.

 本実施形態の液晶表示装置40においては、図17に示すように、上述のTFT基板2の代わりに、当該TFT基板2を接着剤層21を介して積層した積層基板2aを使用している。 In the liquid crystal display device 40 of this embodiment, as shown in FIG. 17, a laminated substrate 2 a obtained by laminating the TFT substrate 2 with an adhesive layer 21 is used instead of the TFT substrate 2 described above.

 そして、図18に示すように、積層された2つのTFT基板2の各々において、TFT基板2上の配線(即ち、表示素子層7に形成された配線)により形成された第3コイル9fと、当該第3コイル9fに対向して配置され、第3コイル9fと誘導性結合を行う第3コイル9gが設けられている点に特徴がある。 As shown in FIG. 18, in each of the two stacked TFT substrates 2, a third coil 9f formed by wiring on the TFT substrate 2 (that is, wiring formed in the display element layer 7); There is a feature in that a third coil 9g is provided opposite to the third coil 9f and inductively coupled with the third coil 9f.

 そして、このような構成により、上記従来技術と異なり、異方導電性接着剤を使用することなく、誘導性結合により、表示素子層7に形成されたTFT素子11間において信号の伝達を行うことが可能になる。 With such a configuration, unlike the above-described conventional technique, signals are transmitted between the TFT elements 11 formed on the display element layer 7 by inductive coupling without using an anisotropic conductive adhesive. Is possible.

 即ち、本実施形態においては、上述の第1の実施形態において説明した効果に加えて、プラスチック基板6上にTFT素子11が形成されたTFT基板2を積層して設け、フレキシブルデバイスを集積化した場合であっても、異方導電性接着剤を使用することなく、誘導性結合により、表示素子層7に形成されたTFT素子11間において信号の伝達を行うことが可能になる。 That is, in this embodiment, in addition to the effects described in the first embodiment, the TFT substrate 2 on which the TFT element 11 is formed is laminated on the plastic substrate 6, and the flexible device is integrated. Even in this case, signals can be transmitted between the TFT elements 11 formed in the display element layer 7 by inductive coupling without using an anisotropic conductive adhesive.

 なお、接着剤層21を構成する接着剤としては、上述の接着剤層16,18,37と同様に、例えば、エポキシ樹脂、ブチラール樹脂、アクリル樹脂などの、各種の樹脂の接着剤が挙げられ、また、熱硬化性樹脂や紫外線硬化性樹脂を使用することができる。 In addition, as an adhesive agent which comprises the adhesive bond layer 21, the adhesive agent of various resin, such as an epoxy resin, a butyral resin, an acrylic resin, is mentioned like the above-mentioned adhesive bond layers 16, 18, and 37, for example. Moreover, a thermosetting resin or an ultraviolet curable resin can be used.

 また、本実施形態においては、上述の図13において説明したガラス板剥離工程の後、第3コイル9gが形成されたTFT基板2に対して、接着剤層21を介して、第3コイル9fが形成されたTFT基板2を貼り合わせることにより積層基板2aを作製する。 Further, in the present embodiment, after the glass plate peeling process described in FIG. 13 above, the third coil 9f is attached to the TFT substrate 2 on which the third coil 9g is formed via the adhesive layer 21. The laminated substrate 2a is produced by bonding the formed TFT substrate 2 together.

 また、TFT基板作製工程において、第3コイル9gが形成されたTFT基板2に対して、接着剤層21を介して、第3コイル9fが形成され、支持基板であるガラス基板17が設けられたTFT基板2を貼り合わせることにより積層基板2aを作製しておき、その後のガラス板剥離工程において、ガラス基板17を剥離する構成としてもよい。 Further, in the TFT substrate manufacturing process, the third coil 9f is formed through the adhesive layer 21 on the TFT substrate 2 on which the third coil 9g is formed, and the glass substrate 17 which is a support substrate is provided. It is good also as a structure which produces the laminated substrate 2a by bonding the TFT substrate 2, and peels the glass substrate 17 in the subsequent glass plate peeling process.

 このように、本実施形態においては、複数のTFT基板2を接着剤層21を介して積層するため、簡単な構成で、フレキシブルデバイスを集積化することができる。 Thus, in the present embodiment, since the plurality of TFT substrates 2 are stacked via the adhesive layer 21, the flexible device can be integrated with a simple configuration.

 (第3の実施形態)
 次に、本発明の第3の実施形態について説明する。図19は、本発明の第3の実施形態に係る液晶表示装置を示す断面図であり、図20は、本発明の第3の実施形態に係る液晶表示装置の表示領域における積層基板の断面図である。
(Third embodiment)
Next, a third embodiment of the present invention will be described. FIG. 19 is a cross-sectional view showing a liquid crystal display device according to the third embodiment of the present invention, and FIG. 20 is a cross-sectional view of the multilayer substrate in the display region of the liquid crystal display device according to the third embodiment of the present invention. It is.

 なお、本実施形態においては、上記第1、第2の実施形態と同様の構成部分については同一の符号を付してその説明を省略する。また、液晶表示装置の全体構成については、上述の第1の実施形態において説明したものと同様であるため、ここでは詳しい説明を省略する。 In addition, in this embodiment, the same code | symbol is attached | subjected about the component similar to the said 1st, 2nd embodiment, and the description is abbreviate | omitted. Further, the overall configuration of the liquid crystal display device is the same as that described in the first embodiment, and therefore detailed description thereof is omitted here.

 本実施形態の液晶表示装置45においては、図19、図20に示すように、上述の第2の実施形態において説明した接着剤層21を使用せず、2つのTFT基板2を、直接、積層した積層基板2bを使用している点に特徴がある。 In the liquid crystal display device 45 of this embodiment, as shown in FIGS. 19 and 20, the two TFT substrates 2 are directly stacked without using the adhesive layer 21 described in the second embodiment. The feature is that the laminated substrate 2b is used.

 そして、上述の第2の実施形態と同様に、積層された2つのTFT基板2の各々において、TFT基板2上の配線(即ち、表示素子層7に形成された配線)により形成された第3コイル9fと、当該第3コイル9fに対向して配置され、第3コイル9fと誘導性結合を行う第3コイル9gが設けられている。 Similarly to the second embodiment described above, in each of the two stacked TFT substrates 2, a third formed by wiring on the TFT substrate 2 (that is, wiring formed on the display element layer 7). A coil 9f and a third coil 9g arranged in opposition to the third coil 9f and performing inductive coupling with the third coil 9f are provided.

 そして、このような構成により、上記従来技術と異なり、異方導電性接着剤を使用することなく、誘導性結合により、表示素子層7に形成されたTFT素子11間において信号の伝達を行うことが可能になり、上述の第2の実施形態において説明した効果と同様の効果を得ることが可能になる。 With such a configuration, unlike the above-described conventional technique, signals are transmitted between the TFT elements 11 formed on the display element layer 7 by inductive coupling without using an anisotropic conductive adhesive. Thus, the same effects as those described in the second embodiment can be obtained.

 また、本実施形態においては、上述のTFT基板作製工程において、第3コイル9fが形成され、支持基板であるガラス基板17が設けられたTFT基板2上に、スピンコート法やスリットコート法により、例えば、20μm程度の厚みでポリイミド樹脂を塗布し、その後、乾燥処理、及びキュア(アニール処理)を行うことにより、ポリイミド樹脂により形成されたフィルム状の可撓性を有するプラスチック基板6を形成する。 In the present embodiment, in the above TFT substrate manufacturing process, the third coil 9f is formed, and the TFT substrate 2 provided with the glass substrate 17 as the support substrate is subjected to spin coating or slit coating. For example, a polyimide resin is applied with a thickness of about 20 μm, and then a drying treatment and a curing (annealing treatment) are performed to form a film-like flexible plastic substrate 6 formed of the polyimide resin.

 その後、このプラスチック基板6上に、TFT素子11、第3コイル9gが形成された表示素子層7を形成し、ガラス板剥離工程において、ガラス基板17を剥離することにより、2つのTFT基板2により構成される積層基板2bを作製する。 After that, the display element layer 7 on which the TFT element 11 and the third coil 9g are formed is formed on the plastic substrate 6, and the glass substrate 17 is peeled off in the glass plate peeling step, whereby the two TFT substrates 2 are formed. The laminated substrate 2b to be configured is produced.

 従って、本実施形態においては、上述の第2の実施形態と異なり、接着剤層21を使用してTFT基板2を積層する必要がないため、接着剤層21による貼り合わせ工程が不要になるとともに、接着剤層21を使用しないため、コストダウンを図ることが可能になる。 Therefore, in the present embodiment, unlike the above-described second embodiment, it is not necessary to laminate the TFT substrate 2 using the adhesive layer 21, so that a bonding process using the adhesive layer 21 is not necessary. Since the adhesive layer 21 is not used, the cost can be reduced.

 また、接着剤層21による貼り合わせ工程が不要であるため、貼り合わせ工程における気泡の挟み込み等を防止することができ、歩留まりを向上させることが可能になる。 In addition, since the bonding step by the adhesive layer 21 is not necessary, it is possible to prevent air bubbles from being caught in the bonding step, and to improve the yield.

 更に、ポリイミド樹脂を塗布して、表示素子層7の表面上にプラスチック基板6を形成する際に、塗布条件を制御することにより、積層されたTFT基板2におけるTFT素子11間の距離を容易に制御することが可能になる。 Furthermore, when the polyimide resin is applied to form the plastic substrate 6 on the surface of the display element layer 7, the distance between the TFT elements 11 in the laminated TFT substrate 2 can be easily controlled by controlling the application conditions. It becomes possible to control.

 また、2つのTFT基板2を貼り合わせることなく、直接、積層する構成であるため、例えば、下層側のTFT基板2のアライメントマークを利用して、上層側のTFT基板2を積層することが可能になる。従って、通信用の第3コイル9f,9gの位置あわせをフォトリソグラフィーの精度で行うことができ、微細化が可能になる。更に、電気的接続用のためのスルーホールを形成する必要がないため、製造工程を簡略化することが可能になる。 In addition, since the two TFT substrates 2 are directly laminated without bonding, the upper TFT substrate 2 can be laminated using, for example, the alignment mark of the lower TFT substrate 2. become. Accordingly, the communication third coils 9f and 9g can be aligned with accuracy of photolithography, and miniaturization is possible. Furthermore, since it is not necessary to form a through hole for electrical connection, the manufacturing process can be simplified.

 なお、上記実施形態は以下のように変更しても良い。 Note that the above embodiment may be modified as follows.

 図21に示すように、上記第2の実施形態における積層基板2aを構成する2つのTFT基板2の表示素子層7を接着剤層21により貼り合わせて、接着剤層21内において、2つのTFT素子11、第3コイル9f,9gとを対向して配置する構成としてもよい。 As shown in FIG. 21, the display element layers 7 of the two TFT substrates 2 constituting the laminated substrate 2 a in the second embodiment are bonded together by the adhesive layer 21, and two TFTs are formed in the adhesive layer 21. The element 11 and the third coils 9f and 9g may be arranged to face each other.

 また、図22に示す液晶表示装置46のように、駆動回路領域Tにおいて、TFT基板2を折曲させて、TFT基板2上に形成された第1コイル9aと、フレキシブルプリント基板24上に形成され、第1コイル9aに対向して配置されて第1コイル9aと誘導性結合を行う第2コイル25とを設ける構成としてもよい。 Further, like the liquid crystal display device 46 shown in FIG. 22, in the drive circuit region T, the TFT substrate 2 is bent and formed on the flexible printed circuit board 24 and the first coil 9a formed on the TFT substrate 2. The second coil 25 may be provided so as to face the first coil 9a and perform inductive coupling with the first coil 9a.

 このような構成により、駆動回路領域Tを狭くすることが可能になるため、液晶表示装置46の狭額縁化を図ることが可能になる。 With such a configuration, the drive circuit region T can be narrowed, so that the frame of the liquid crystal display device 46 can be reduced.

 また、図23に示すように、上述のゲートドライバ基板23及びソースドライバ基板26に形成されたドライバ回路50を、表示素子層7に形成し、これらのドライバ回路50とTFT素子11との間の信号伝達を、誘導性結合を行うように対向して配置された第4コイル9h~9jの誘導性結合により行う構成としてもよい。 Further, as shown in FIG. 23, the driver circuit 50 formed on the gate driver substrate 23 and the source driver substrate 26 described above is formed on the display element layer 7, and between these driver circuit 50 and the TFT element 11. The signal transmission may be performed by inductive coupling of the fourth coils 9h to 9j arranged to face each other so as to perform inductive coupling.

 このような構成により、額縁領域Fにおいて、ゲートドライバ基板23及びソースドライバ基板26を設ける必要がなくなるため、額縁領域Fを狭くすることが可能になり、結果として、液晶表示装置の狭額縁化を図ることが可能になる。 With such a configuration, it is not necessary to provide the gate driver substrate 23 and the source driver substrate 26 in the frame region F, so that the frame region F can be narrowed. As a result, the liquid crystal display device can be narrowed. It becomes possible to plan.

 なお、バックライト51等の光源を備える透過型の液晶表示装置の場合、図23に示すように、ドライバ回路50は、TFT素子11と重なり合う領域(即ち、光Lが透過しない領域)に形成される。 In the case of a transmissive liquid crystal display device including a light source such as a backlight 51, as shown in FIG. 23, the driver circuit 50 is formed in a region overlapping with the TFT element 11 (that is, a region where light L is not transmitted). The

 また、上記第2及び第3の実施形態においては、2つのTFT基板2を積層する構成としてが、3つ以上のTFT基板2を積層して積層基板を形成する構成としてもよい。 In the second and third embodiments, the two TFT substrates 2 may be stacked. Alternatively, three or more TFT substrates 2 may be stacked to form a stacked substrate.

 また、上記実施形態においては、半導体素子としてTFT素子を例に挙げて説明したが、半導体素子はこれに限定されず、例えば、ポリシリコン、アモルファスシリコン、酸化インジウムガリウム亜鉛(IGZO)により形成されたトランジスター、ダイオード、有機半導体等であってもよい。 Moreover, in the said embodiment, although demonstrated taking the TFT element as an example as a semiconductor element, a semiconductor element is not limited to this, For example, it formed with polysilicon, amorphous silicon, indium gallium zinc oxide (IGZO). It may be a transistor, a diode, an organic semiconductor, or the like.

 上記本実施形態においては、表示装置としてLCD(liquid crystal display;液晶表示ディスプレイ)に係るものについて示したが、表示装置は、有機EL(organic electro luminescence)、電気泳動(electrophoretic)、PD(plasma display;プラズマディスプレイ)、PALC(plasma addressed liquid crystal display;プラズマアドレス液晶ディスプレイ)、無機EL(inorganic electro luminescence)、FED(field emission display;電界放出ディスプレイ)、又はSED(surface-conduction electron-emitter display;表面電界ディスプレイ)等に係る表示装置であってもよい。 In the present embodiment, the display device related to an LCD (liquid crystal display) is shown. However, the display device can be an organic EL (organic electroluminescence), electrophoresis (electrophoretic), PD (plasma display). Plasma display), PALC (plasma addressed liquid crystal display), inorganic EL (inorganic electroluminescence), FED (field emission display), or SED (surface-conduction electron-emitter display) It may be a display device related to an electric field display.

 以上説明したように、本発明は、プラスチック基板を備えた液晶表示装置等の表示装置に、特に、有用である。 As described above, the present invention is particularly useful for a display device such as a liquid crystal display device provided with a plastic substrate.

 1  液晶表示装置
 2  TFT基板(表示装置用基板)
 2a  積層基板
 2b  積層基板
 3  CF基板(他の表示装置用基板)
 4  液晶層(表示媒体層)
 5  シール材
 6  プラスチック基板
 7  表示素子層
 8  プラスチック基板
 9a  第1コイル
 9b  第1コイル
 9c  第1コイル
 9d  第1コイル
 9e  第1コイル
 9f  第3コイル
 9g  第3コイル
 9h  第4コイル
 9i  第4コイル
 9j  第4コイル
 11  TFT素子(半導体素子)
 16  接着剤層
 18  接着剤層
 19  CF素子層
 20  ガラス基板
 21  接着剤層(他の接着剤層)
 22  配線
 23  ゲートドライバ基板(回路基板)
 24  フレキシブルプリント基板(回路基板)
 25  第2コイル
 26  ソースドライバ基板
 26a  第2コイル
 26b  第2コイル
 27a  第2コイル
 27b  第2コイル
 37  接着剤層
 40  液晶表示装置
 45  液晶表示装置
 46  液晶表示装置
 50  ドライバ回路
 51  バックライト
 D  表示領域
 F  額縁領域
 T  駆動回路領域
1 Liquid crystal display device 2 TFT substrate (substrate for display device)
2a Multilayer substrate 2b Multilayer substrate 3 CF substrate (Other display device substrate)
4 Liquid crystal layer (display medium layer)
DESCRIPTION OF SYMBOLS 5 Seal material 6 Plastic substrate 7 Display element layer 8 Plastic substrate 9a 1st coil 9b 1st coil 9c 1st coil 9d 1st coil 9e 1st coil 9f 3rd coil 9g 3rd coil 9h 4th coil 9i 4th coil 9j 4th coil 11 TFT element (semiconductor element)
16 Adhesive Layer 18 Adhesive Layer 19 CF Element Layer 20 Glass Substrate 21 Adhesive Layer (Other Adhesive Layer)
22 Wiring 23 Gate driver board (circuit board)
24 Flexible printed circuit boards (circuit boards)
25 second coil 26 source driver board 26a second coil 26b second coil 27a second coil 27b second coil 37 adhesive layer 40 liquid crystal display device 45 liquid crystal display device 46 liquid crystal display device 50 driver circuit 51 backlight D display area F Frame area T Drive circuit area

Claims (10)

 可撓性を有するプラスチック基板、該プラスチック基板上に形成され、半導体素子を有する表示素子層、及び該表示素子層に形成された配線からなる第1コイルを有する表示装置用基板と、
 画像表示を行う表示領域の周辺に設けられ、前記第1コイルに対向して配置されて前記第1コイルと誘導性結合を行う第2コイルを有する回路基板と
 を備えることを特徴とする表示装置。
A flexible plastic substrate, a display element layer formed on the plastic substrate and having a semiconductor element, and a display device substrate having a first coil made of wiring formed on the display element layer;
A display device comprising: a circuit board provided around a display area for displaying an image, and having a second coil disposed opposite to the first coil and inductively coupled to the first coil. .
 前記表示装置用基板と前記回路基板とが、接着剤層を介して、貼り合わされていることを特徴とする請求項1に記載の表示装置。 The display device according to claim 1, wherein the display device substrate and the circuit board are bonded together with an adhesive layer interposed therebetween.  前記回路基板が、フレキシブルプリント基板であることを特徴とする請求項1に記載の表示装置。 The display device according to claim 1, wherein the circuit board is a flexible printed circuit board.  前記回路基板が、ゲートドライバ基板及びソースドライバ基板の少なくとも一方であることを特徴とする請求項1に記載の表示装置。 The display device according to claim 1, wherein the circuit board is at least one of a gate driver board and a source driver board.  複数の前記表示装置用基板が積層された積層基板を備え、前記複数の表示装置用基板の各々は前記配線により形成された第3コイルを有し、前記第3コイルの各々が、誘導性結合を行うように対向して配置されていることを特徴とする請求項1~請求項4のいずれか1項に記載の表示装置。 A plurality of display device substrates, each of which has a third coil formed by the wiring, and each of the third coils is inductively coupled; 5. The display device according to claim 1, wherein the display devices are arranged so as to face each other.  前記複数の表示装置用基板が、他の接着剤層を介して積層されていることを特徴とする請求項5に記載の表示装置。 The display device according to claim 5, wherein the plurality of display device substrates are stacked via another adhesive layer.  前記積層基板において、前記表示素子層の表面上に前記プラスチック基板を設けることにより、前記表示装置用基板が積層されていることを特徴する請求項5に記載の表示装置。 6. The display device according to claim 5, wherein in the laminated substrate, the display device substrate is laminated by providing the plastic substrate on a surface of the display element layer.  前記半導体素子がTFT素子であることを特徴とする請求項1~請求項7のいずれか1項に記載の表示装置。 8. The display device according to claim 1, wherein the semiconductor element is a TFT element.  前記表示装置用基板に対向して配置された他の表示装置用基板と、
 前記表示装置用基板及び前記他の表示装置用基板の間に設けられた表示媒体層と
 を更に備えることを特徴とする請求項1~請求項8のいずれか1項に記載の表示装置。
Another display device substrate disposed opposite to the display device substrate;
The display device according to any one of claims 1 to 8, further comprising: a display medium layer provided between the display device substrate and the other display device substrate.
 前記表示媒体層が液晶層であることを特徴とする請求項9に記載の表示装置。 The display device according to claim 9, wherein the display medium layer is a liquid crystal layer.
PCT/JP2012/003773 2011-06-16 2012-06-08 Display device Ceased WO2012172768A1 (en)

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JP2011-133833 2011-06-16

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Citations (8)

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JP2000258792A (en) * 1999-03-10 2000-09-22 Rohm Co Ltd Liquid crystal display device and substrate thereof
JP2002340989A (en) * 2001-05-15 2002-11-27 Semiconductor Energy Lab Co Ltd Measurement method, inspection method and inspection device
JP2003167264A (en) * 2001-12-03 2003-06-13 Sharp Corp Liquid crystal display
WO2007063667A1 (en) * 2005-12-01 2007-06-07 Sharp Kabushiki Kaisha Circuit member, electrode connecting structure and display device provided with such electrode connecting structure
JP2010109110A (en) * 2008-10-30 2010-05-13 Hitachi Ltd Circuit board

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08136943A (en) * 1994-11-14 1996-05-31 Ricoh Co Ltd Liquid crystal display
JPH11133392A (en) * 1997-11-04 1999-05-21 Rohm Co Ltd Liquid crystal display element
JP2000259092A (en) * 1999-03-08 2000-09-22 Optrex Corp Electro-optic device
JP2000258792A (en) * 1999-03-10 2000-09-22 Rohm Co Ltd Liquid crystal display device and substrate thereof
JP2002340989A (en) * 2001-05-15 2002-11-27 Semiconductor Energy Lab Co Ltd Measurement method, inspection method and inspection device
JP2003167264A (en) * 2001-12-03 2003-06-13 Sharp Corp Liquid crystal display
WO2007063667A1 (en) * 2005-12-01 2007-06-07 Sharp Kabushiki Kaisha Circuit member, electrode connecting structure and display device provided with such electrode connecting structure
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