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WO2012166749A3 - Implantation d'ion et recuit pour des cellules solaires à rendement élevé à jonction arrière et contact arrière - Google Patents

Implantation d'ion et recuit pour des cellules solaires à rendement élevé à jonction arrière et contact arrière Download PDF

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Publication number
WO2012166749A3
WO2012166749A3 PCT/US2012/039901 US2012039901W WO2012166749A3 WO 2012166749 A3 WO2012166749 A3 WO 2012166749A3 US 2012039901 W US2012039901 W US 2012039901W WO 2012166749 A3 WO2012166749 A3 WO 2012166749A3
Authority
WO
WIPO (PCT)
Prior art keywords
ion implantation
annealing
high efficiency
solar cells
junction solar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2012/039901
Other languages
English (en)
Other versions
WO2012166749A2 (fr
Inventor
Mehrdad M. Moslehi
Virendra V. Rana
Pawan Kapur
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beamreach Solexel Assets Inc
Original Assignee
Solexel Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solexel Inc filed Critical Solexel Inc
Priority to KR1020137034723A priority Critical patent/KR101396027B1/ko
Priority to EP12793962.7A priority patent/EP2715797A4/fr
Publication of WO2012166749A2 publication Critical patent/WO2012166749A2/fr
Publication of WO2012166749A3 publication Critical patent/WO2012166749A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne une cellule solaire en film mince à jonction arrière et contact arrière, qui est disposée sur une cellule solaire semi-conductrice en film mince. De préférence, la matière semi-conductrice de film mince comprend du silicium cristallin. Des régions émettrices, des régions émettrices sélectives et un champ de surface arrière sont formés par des procédés d'implantation d'ion et de recuit.
PCT/US2012/039901 2011-05-27 2012-05-29 Implantation d'ion et recuit pour des cellules solaires à rendement élevé à jonction arrière et contact arrière Ceased WO2012166749A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020137034723A KR101396027B1 (ko) 2011-05-27 2012-05-29 고효율 후면 접촉 후면 접합 태양 전지의 이온 주입 및 어닐링
EP12793962.7A EP2715797A4 (fr) 2011-05-27 2012-05-29 Implantation d'ion et recuit pour des cellules solaires à rendement élevé à jonction arrière et contact arrière

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161490859P 2011-05-27 2011-05-27
US61/490,859 2011-05-27

Publications (2)

Publication Number Publication Date
WO2012166749A2 WO2012166749A2 (fr) 2012-12-06
WO2012166749A3 true WO2012166749A3 (fr) 2013-03-28

Family

ID=47260262

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2012/039901 Ceased WO2012166749A2 (fr) 2011-05-27 2012-05-29 Implantation d'ion et recuit pour des cellules solaires à rendement élevé à jonction arrière et contact arrière

Country Status (3)

Country Link
EP (1) EP2715797A4 (fr)
KR (1) KR101396027B1 (fr)
WO (1) WO2012166749A2 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9318644B2 (en) 2009-05-05 2016-04-19 Solexel, Inc. Ion implantation and annealing for thin film crystalline solar cells
KR101925934B1 (ko) 2012-09-06 2018-12-06 삼성에스디아이 주식회사 배터리 팩
GB2521457A (en) * 2013-12-20 2015-06-24 Isis Innovation Charge stabilized dielectric film for electronic devices
CN113871494B (zh) * 2020-06-30 2024-03-15 泰州隆基乐叶光伏科技有限公司 一种太阳能电池及其制作方法
KR102856453B1 (ko) * 2023-02-28 2025-09-09 연세대학교 산학협력단 모놀리식 적층 소자용 에피택셜 웨이퍼의 제조 방법 및 모놀리식 적층 소자용 에피택셜 웨이퍼
CN117374169B (zh) 2023-12-07 2024-03-12 浙江晶科能源有限公司 背接触太阳能电池的制备方法及背接触太阳能电池

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010111417A1 (fr) * 2009-03-24 2010-09-30 Solexel, Inc. Procédé de fabrication d'un substrat semi-conducteur à couche mince tridimensionnel à partir d'un modèle
US20100304522A1 (en) * 2009-05-05 2010-12-02 Solexel, Inc. Ion implantation fabrication process for thin-film crystalline silicon solar cells
US20100300518A1 (en) * 2009-05-29 2010-12-02 Solexel, Inc. Three-dimensional thin-film semiconductor substrate with through-holes and methods of manufacturing
US7857907B2 (en) * 2007-01-25 2010-12-28 Au Optronics Corporation Methods of forming silicon nanocrystals by laser annealing

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7727866B2 (en) * 2008-03-05 2010-06-01 Varian Semiconductor Equipment Associates, Inc. Use of chained implants in solar cells
EP2308060A4 (fr) * 2008-06-11 2013-10-16 Intevac Inc Système et procédé d'implantation à application spécifique pour utilisation dans la fabrication de cellules solaires
WO2010028177A1 (fr) * 2008-09-03 2010-03-11 Sionyx, Inc. Photodétecteurs haute sensibilité, réseaux d'imagerie et dispositifs photovoltaïques à rendement élevé fabriqués à l'aide d'une implantation d'ions et d'une irradiation laser femtoseconde
US9150966B2 (en) * 2008-11-14 2015-10-06 Palo Alto Research Center Incorporated Solar cell metallization using inline electroless plating
KR20100128153A (ko) * 2009-05-27 2010-12-07 (주)미래컴퍼니 레이저 식각장치 및 이를 이용한 공극 형성 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7857907B2 (en) * 2007-01-25 2010-12-28 Au Optronics Corporation Methods of forming silicon nanocrystals by laser annealing
WO2010111417A1 (fr) * 2009-03-24 2010-09-30 Solexel, Inc. Procédé de fabrication d'un substrat semi-conducteur à couche mince tridimensionnel à partir d'un modèle
US20100304522A1 (en) * 2009-05-05 2010-12-02 Solexel, Inc. Ion implantation fabrication process for thin-film crystalline silicon solar cells
US20100300518A1 (en) * 2009-05-29 2010-12-02 Solexel, Inc. Three-dimensional thin-film semiconductor substrate with through-holes and methods of manufacturing

Also Published As

Publication number Publication date
EP2715797A4 (fr) 2015-05-27
KR20140041602A (ko) 2014-04-04
WO2012166749A2 (fr) 2012-12-06
KR101396027B1 (ko) 2014-05-19
EP2715797A2 (fr) 2014-04-09

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