[go: up one dir, main page]

WO2012160862A1 - Solar cell and method for manufacturing same - Google Patents

Solar cell and method for manufacturing same Download PDF

Info

Publication number
WO2012160862A1
WO2012160862A1 PCT/JP2012/056732 JP2012056732W WO2012160862A1 WO 2012160862 A1 WO2012160862 A1 WO 2012160862A1 JP 2012056732 W JP2012056732 W JP 2012056732W WO 2012160862 A1 WO2012160862 A1 WO 2012160862A1
Authority
WO
WIPO (PCT)
Prior art keywords
glass substrate
solar cell
scattering structure
light scattering
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2012/056732
Other languages
French (fr)
Japanese (ja)
Inventor
細野 彰彦
本並 薫
大嗣 森田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2013516237A priority Critical patent/JPWO2012160862A1/en
Publication of WO2012160862A1 publication Critical patent/WO2012160862A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/30Coatings
    • H10F77/306Coatings for devices having potential barriers
    • H10F77/311Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/70Surface textures, e.g. pyramid structures
    • H10F77/707Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Definitions

  • the present invention relates to a solar cell and a manufacturing method thereof.
  • a photoelectric conversion device that converts light energy into electrical energy
  • a thin film solar cell in which a first conductive layer, a photoelectric conversion layer, and a second conductive layer are sequentially stacked on a substrate
  • the photoelectric conversion layer is made of a semiconductor and has a p-type layer, an n-type layer on the opposite side, and a pin diode structure having a high-resistance i layer therebetween.
  • the semiconductor material for the photoelectric conversion layer include amorphous silicon containing silicon as a main component, microcrystalline silicon, and a silicon-germanium mixed material.
  • the photoelectric conversion layer of these films can be formed by, for example, a plasma CVD method using a source gas containing silicon such as silane gas. Further, not only silicon semiconductor materials but also compound semiconductor materials are used.
  • the photoelectric conversion layer and the substrate there are a superstrate structure in which the light incident side is the substrate and a substrate structure in which the light incident side is the second conductive layer.
  • a substrate using glass as a transparent insulating material is generally used.
  • the first conductive layer and the second conductive layer serve as electrodes for taking out the electric power converted by the photoelectric conversion layer.
  • the surface electrode on the light incident side is generally a transparent electrode made of a transparent conductive material or the like.
  • the back electrode on the side opposite to the light incident side is made of a highly reflective metal material that reflects light toward the photoelectric conversion layer.
  • the thin film solar cell an integrated structure in which the photoelectric conversion layer on the substrate is divided into a plurality of unit cells by grooves or the like is used.
  • the groove for dividing the photoelectric conversion layer and the electrode is formed using a laser scribing method in which a laser beam is irradiated and the photoelectric conversion layer and the electrode in the irradiated portion are removed by the heat.
  • the first conductive layer of the element of the thin film solar cell divided by the groove and the second conductive layer of the adjacent element are connected in series in the groove formed in the photoelectric conversion layer. It is common.
  • the power generation layer of such an integrated thin film solar cell has, for example, a zinc oxide (ZnO) system having a textured structure with fine irregularities so that scattered light is incident on the power generation layer in order to increase the power generation efficiency.
  • a tin oxide (SnO 2 ) -based transparent conductive film can be generally formed on a flat transparent glass substrate by film formation by a CVD method or by etching after forming a film by a sputtering method.
  • Patent Document 1 and Patent Document 2 for example, as shown in Patent Document 1 and Patent Document 2, the surface of the transparent conductive film is roughened by sandblasting, and the transparent conductive film is formed thereon by a sputtering method or the like. By forming the film, a transparent conductive film having a concavo-convex structure on the surface reflecting the concavo-convex shape of the glass substrate can be formed.
  • These thin film solar cells shown in Patent Document 1 and Patent Document 2 are substrate type, but can also be applied to super straight type thin film solar cells.
  • the surface of the crystalline solar cell is etched or the like in order to incorporate scattered light into the silicon solar cell. Concavities and convexities were provided. For this reason, the process is complicated and the cost is increased due to the etching process.
  • the light incident side is covered with a glass substrate, but light in a wavelength region that is not absorbed by the power generation layer returns to the glass substrate side, so when the power generation layer is viewed from the glass substrate surface It was not possible to control the hue of.
  • the present invention has been made in view of the above, and it is possible to prevent a decrease in power generation characteristics due to a structure that scatters light, and to control the hue when viewed from the glass surface. It is an object of the present invention to obtain a solar cell that can be manufactured and a manufacturing method thereof.
  • a solar cell according to the present invention is a solar cell including a glass substrate on a light incident side of a power generation layer that performs photoelectric conversion, and the glass substrate includes laser light. It has a light scattering structure that scatters light incident on the glass substrate formed by focusing and irradiating the glass substrate, and transmits the light scattered by the light scattering structure to the power generation layer side. To do.
  • the present invention it is possible to prevent a decrease in power generation characteristics due to a structure that scatters light, and to obtain a solar cell capable of controlling the hue when viewed from the glass surface at a low cost by a simple process. Play.
  • FIG. 1 is a cross-sectional view showing a schematic configuration of an integrated thin-film solar cell module according to Embodiment 1 of the present invention.
  • FIG. 2 is a cross-sectional view showing a schematic configuration of the thin-film solar cell according to the present embodiment.
  • FIG. 3 is a cross-sectional view showing a schematic configuration of a conventional thin film solar cell in which a surface transparent electrode having a concavo-convex shape on a surface as a light scattering structure is formed on a glass substrate.
  • FIG. 4 is a cross-sectional view showing a schematic configuration of a conventional thin film solar cell formed on a glass substrate having a concavo-convex shape as a light scattering structure.
  • FIG. 1 is a cross-sectional view showing a schematic configuration of an integrated thin-film solar cell module according to Embodiment 1 of the present invention.
  • FIG. 2 is a cross-sectional view showing a schematic configuration of the thin-film solar cell according to the present embodiment.
  • FIG. 5 is a cross-sectional view schematically showing the concept of a method for forming a light scattering structure in a glass substrate by laser irradiation.
  • FIG. 6 is a conceptual diagram showing an example of a laser irradiation pattern for forming a light scattering structure on a glass substrate.
  • FIG. 7 is a cross-sectional view schematically showing the concept of a method for forming a three-dimensional light scattering structure pattern inside a glass substrate.
  • FIG. 8 is a characteristic diagram showing the dependence of the haze ratio indicating the scattering characteristics of the glass substrate on the wavelength of the incident light when the power of the laser light applied to the glass substrate is changed.
  • FIG. 9 is a characteristic diagram showing the dependence of the haze ratio of the glass substrate on the wavelength of incident light when the vertical pitch of the laser irradiation pattern is changed.
  • FIG. 10 is a characteristic diagram showing the dependence of the haze ratio of the glass substrate on the wavelength of incident light when the lateral pitch of the laser irradiation pattern is changed.
  • FIG. 11 is a characteristic diagram showing the dependence of the haze ratio of the glass substrate on the wavelength of incident light due to the difference in the three-dimensional structure of the light scattering structure.
  • FIG. 12 is a characteristic diagram showing the haze ratio dependence of the open-circuit voltage between a thin film solar cell formed on a glass substrate having a light scattering structure and a thin film solar cell formed on a surface transparent electrode having irregularities.
  • FIG. 13 is a diagram illustrating an example of the light transmittance of the glass substrate on which the internal scattering structure according to the first embodiment of the present invention is formed by laser irradiation.
  • FIG. 14 is a characteristic diagram showing the difference in the reflection spectrum of the thin-film solar cell depending on the laser irradiation conditions when forming the light scattering structure.
  • FIG. 15 is sectional drawing which shows schematic structure of the crystalline solar cell module concerning Embodiment 2 of this invention.
  • FIG. 16 is a cross-sectional view showing a schematic configuration of a conventional crystalline solar cell having an uneven surface shape.
  • FIG. 17 is sectional drawing which shows schematic structure of the crystalline solar cell module concerning Embodiment 2 of this invention.
  • FIG. 1 is a cross-sectional view showing a schematic configuration of an integrated thin-film solar cell module according to Embodiment 1 of the present invention.
  • the integrated thin-film solar cell module according to the first embodiment is a translucent insulating substrate on a glass substrate 1 having an internal light scattering structure 2 for scattering incident light.
  • a plurality of integrated thin-film solar cells 6 are formed.
  • a plurality of thin film solar cells 7 in which a surface transparent electrode 3, a power generation layer 4, and a back electrode 5 are sequentially stacked on a glass substrate 1 having an internal light scattering structure 2 are electrically connected in series. Connected and configured.
  • the integrated thin film solar cell 6 can be manufactured by a conventionally known method. In the following, a method for manufacturing the integrated thin film solar cell 6 will be briefly described by taking a silicon-based integrated thin film solar cell as an example, but the present invention is not limited thereto. Further, in the integrated thin film solar cell module according to the present embodiment, in addition to the silicon integrated thin film solar cell, other compound-based (for example, CdTe, CIGS) integrated thin film solar cells may be used. it can.
  • CdTe, CIGS compound-based integrated thin film solar cells
  • the glass substrate 1 having the internal light scattering structure 2 is formed. A method for forming the glass substrate 1 having the internal light scattering structure 2 will be described later.
  • a surface transparent electrode 3 made of a transparent conductive film such as a SnO 2 film or a ZnO-based film is formed on a flat surface of the glass substrate 1 having the internal light scattering structure 2 by, for example, a CVD method or a sputtering method.
  • the surface transparent electrode 3 is separated and patterned by laser scribing or the like so as to straddle the region of the adjacent thin film solar cells 7.
  • the power generation layer 4 is formed on the glass substrate 1 on which the surface transparent electrode 3 is patterned by, for example, the CVD method.
  • the power generation layer 4 includes at least one unit component configured by sequentially laminating a first conductive layer, a photoelectric conversion layer, and a second conductive layer. Further, an intermediate film such as SiOx having an optical confinement effect may be formed between the unit constituent elements.
  • the power generation layer 4 is separated by forming a scribe groove in the power generation layer 4 by laser scribing or the like so that a part of the surface transparent electrode 3 is exposed in the region of each thin film solar cell 7.
  • a back electrode 5 made of a laminated film of a transparent conductive film such as a ZnO-based film and a metal electrode film such as an Ag film is formed on the glass substrate 1.
  • the back electrode 5 is also embedded in a scribe groove formed in the power generation layer 4 so as to be electrically connected to the surface transparent electrode 3 through the scribe groove.
  • the power generation layer 4 and the back electrode 5 are separated for each thin film solar cell 7 by laser scribing or the like. And in order to ensure the electrical insulation in the outer peripheral part of the glass substrate 1, the surface transparent electrode 3, the electric power generation layer 4, and the back surface electrode 5 of the edge part of the glass substrate 1 are removed by laser processing or a sandblast process. Thus, an integrated thin film solar cell 6 in which adjacent thin film solar cells 7 are electrically connected in series is formed.
  • an integrated thin film solar cell module is obtained by bonding the glass substrate 1 on which the integrated thin film solar cell 6 is formed and the back glass 22 through a sealing material 21.
  • an integrated thin-film solar cell module can also be configured by using a filler such as an ethylene vinyl acetate copolymer (EVA) laminate material and a weather-resistant back film instead of the sealing material 21.
  • EVA ethylene vinyl acetate copolymer
  • FIG. 2 is a cross-sectional view showing a schematic configuration of the thin-film solar battery according to the present embodiment, and is an enlarged view of a main part showing a part of the thin-film solar battery cell 7 shown in FIG.
  • the thin-film solar cell is configured by sequentially laminating the surface transparent electrode 3, the power generation layer 4, and the back electrode 5 on the glass substrate 1 having the internal light scattering structure 2. Since the surface transparent electrode 3 is formed on the flat glass substrate 1, no film growth abnormality or grain boundary defect occurs. For this reason, the surface transparent electrode 3 of this thin film solar cell has a favorable electrical conduction characteristic compared with the surface transparent electrode 3a formed on the glass texture board
  • the film thickness required for film formation is less than 1 ⁇ 2 as compared with the case where an uneven shape is formed on the surface of the surface transparent electrode 8 itself. This is also advantageous in terms of throughput and cost. Furthermore, since the surface of the formed surface transparent electrode 3 has a flat shape, the power generation layer 4 formed thereon has defects due to the unevenness of the surface transparent electrode and the unevenness of the glass substrate. Does not occur. For this reason, the fall of the power generation characteristic resulting from this defect is suppressed.
  • light incident on the glass substrate 1 having the internal light scattering structure 2 is scattered by the internal light scattering structure 2, then passes through the glass substrate 1, and is generated through the surface transparent electrode 3. 4 is incident. The scattered light is obliquely incident on the power generation layer 4, and the optical path length in the power generation layer 4 is longer than the film thickness of the power generation layer 4. For this reason, the power generation efficiency in the power generation layer 4 is improved.
  • FIG. 3 is a cross-sectional view showing a schematic configuration of a conventional thin film solar cell in which a surface transparent electrode 8 having a concavo-convex shape on the surface as a light scattering structure is formed on a glass substrate 1.
  • a surface transparent electrode 8 having a concavo-convex shape is formed on a glass substrate 1 on the surface opposite to the glass substrate 1.
  • the surface transparent electrode 8 having the uneven shape is formed by forming a SnO 2 film or a ZnO-based film by a CVD method, or etching a ZnO-based flat film with diluted hydrochloric acid or the like.
  • the power generation layer 4 and the back electrode 5 are sequentially laminated.
  • the power generation layer 4 is formed on the surface transparent electrode 8 having the concavo-convex shape in this way, a defect occurs in the power generation layer 4 starting from the convex top portion or the concave bottom portion of the surface transparent electrode 8, which is caused by this defect. A decrease in power generation characteristics occurs.
  • SnO 2 or a ZnO-based film is formed by the CVD method in order to form a concavo-convex shape on the surface transparent electrode 8, in order to obtain a predetermined concavo-convex shape, these films have a thickness of about 1 ⁇ m. It is necessary to form a film.
  • the film thickness of the ZnO-based film before etching needs to be about 1 ⁇ m. Therefore, in these cases, the throughput deteriorates and the cost increases.
  • FIG. 4 is a cross-sectional view showing a schematic configuration of a conventional thin film solar cell formed on a glass substrate (hereinafter referred to as a glass texture substrate 9) having an uneven shape as a light scattering structure.
  • the glass texture substrate 9 itself has an uneven shape to scatter incident light.
  • the surface transparent electrode 3 a is formed on the concavo-convex shape of the glass texture substrate 9.
  • a SnO 2 film or a ZnO-based film is formed by a CVD method or a sputtering method.
  • a power generation layer 4 and a back electrode 5 are sequentially laminated.
  • the convex top portion of the surface transparent electrode 3a corresponding to the convex top portion and the concave bottom portion of the concave and convex shape of the glass texture substrate 9 Defects are generated in the power generation layer 4 starting from the concave bottom. The power generation characteristics deteriorate due to an increase in electrical resistance of these surface transparent electrodes 3a and defects generated in the power generation layer 4.
  • FIG. 5 is a cross-sectional view schematically showing a concept of a method for forming the internal light scattering structure 2 in the glass substrate 1 by laser irradiation.
  • YAG triple wave is used as the laser beam 10
  • the laser beam 10 is converged by the lens 11 until it becomes a circle having a diameter of 3 ⁇ m at the focal position 12.
  • the positional relationship between the glass substrate 1 and the lens 11 is adjusted so that the focal position 12 is located inside the glass substrate 1, the laser beam 10 is pulsated, and the glass substrate 1 is aligned with the surface direction of the glass substrate 1 ( Scan in the direction of arrow A in FIG.
  • the internal light scattering structure 2 After forming the internal light scattering structure 2 by setting the position where the laser irradiation starts and the position where the laser irradiation starts, that is, the position where the internal light scattering structure 2 is formed in the plane direction of the glass substrate 1 to the inside of the end of the glass substrate 1 In this case, sufficient strength of the glass substrate 1 can be secured.
  • the peripheral region of the glass substrate 1 it is desirable to provide a region having a width of 1 mm or more where the internal light scattering structure 2 is not formed on the entire circumference, and more preferably, the width is 2 mm or more.
  • the formation position of the internal light scattering structure 2 in the surface direction of the glass substrate 1 outside the region where the integrated thin film solar cell 6 is formed sunlight incident obliquely on the glass substrate 1 is also internally scattered. After being scattered by the structure 2, it can be incident on the integrated thin film solar cell 6.
  • the light incident on the glass substrate 1 is scattered by the internal light scattering structure 2 and then incident on the entire surface of the integrated thin film solar cell 6, and the internal light scattering structure 2 is in the plane direction of the glass substrate 1. It is desirable that the glass substrate 1 be formed uniformly on the entire surface except for the peripheral region.
  • the laser irradiation start position and end position are set to the end of the glass substrate 1. It is necessary to be inside the portion and outside the region where the crystalline solar cells are arranged. In the case of a crystalline solar cell module, the scattering structure does not have to be formed on the front surface of the portion where the gap between the substrates is large.
  • FIG. 6 is a conceptual diagram showing an example of a laser irradiation pattern 13 for forming the internal light scattering structure 2 on the glass substrate 1.
  • FIG. 6 shows a state in which the laser irradiation pattern 13 is viewed from the upper side of the glass substrate 1.
  • the glass substrate 1 is scanned in the direction of arrow A in FIG.
  • the laser beam 10 is applied to the glass substrate 1 so as to form a circle having a diameter of 3 ⁇ m at the focal position inside the glass substrate 1. Since the laser beam 10 is irradiated in a pulse shape, the laser beam 10 is irradiated linearly in the direction of arrow A at a vertical pitch Pl determined by the frequency of the pulse and the scanning speed of the glass substrate 1.
  • the position of the glass substrate 1 is moved in the plane direction of the glass substrate 1 by a distance Pw (lateral pitch Pw) in a direction perpendicular to the scanning direction of the glass substrate 1, and the laser is again checked.
  • Pw lateral pitch Pw
  • the laser light can be irradiated two-dimensionally onto the glass substrate 1, and the internal light scattering structure 2 that extends two-dimensionally in the plane of the glass substrate 1 is formed. Can do.
  • FIG. 7 is a cross-sectional view schematically showing the concept of a method of forming a three-dimensional internal light scattering structure pattern inside the glass substrate 1.
  • the first internal light scattering structure 14 is formed at the first focal position 16 in the thickness direction of the glass substrate 1 by the laser light 10 converged by the lens 11 as in the method shown in FIG. 5.
  • the focal position of the laser beam 10 is moved inside the glass substrate 1 by displacing the position of the glass substrate 1 in the thickness direction of the glass substrate 1 (downward in FIG. 7).
  • the second focal position 17 is irradiated with the laser beam 10 again, and the glass substrate 1 is scanned in the direction of arrow A in FIG. Can be formed at the upper position of the first internal light scattering structure 14.
  • a three-dimensional internal light scattering structure can be formed.
  • FIG. 8 is a characteristic diagram showing the dependence of the haze ratio (%) indicating the scattering characteristics of the glass substrate 1 on the wavelength of the incident light when the power of the laser light 10 applied to the glass substrate 1 is changed. In FIG. 8, it shows about the case where the power of the laser beam 10 irradiated to the glass substrate 1 is changed to 0.45 W, 0.6 W, and 0.7 W.
  • the laser irradiation pattern in the surface direction of the glass substrate 1 in the formation of the internal light scattering structure 2 is a two-dimensional pattern in which the vertical pitch Pl is 26.7 ⁇ m, the horizontal pitch Pw is 20 ⁇ m, and the focal position is fixed at one place.
  • the haze ratio decreases as the wavelength of light incident on the glass substrate 1 increases. It is understood that it is hard to be done.
  • the glass substrate 1 on which the internal light scattering structure 2 is formed can be increased in haze by irradiating the laser beam 10 with high power.
  • FIG. 9 is a characteristic diagram showing the dependence of the haze ratio of the glass substrate 1 on the wavelength of incident light when the vertical pitch Pl of the laser irradiation pattern 13 is changed.
  • the scanning speed of the glass substrate 1 is changed and the vertical pitch Pl of the laser irradiation pattern 13 is changed to 13.3 ⁇ m, 20 ⁇ m, and 26.7 ⁇ m.
  • the laser irradiation pattern 13 is a two-dimensional pattern in which the horizontal pitch Pw is 20 ⁇ m, the focal position is fixed at one place, and the power of the laser beam 10 is 0.45 W. From FIG. 9, it can be seen that the glass substrate 1 having an internal light scattering structure having different scattering characteristics can be obtained by changing the vertical pitch Pl of the laser irradiation pattern 13.
  • the pitch at which the laser beam 10 is irradiated in order to suppress a decrease in the strength of the glass substrate 1, it is preferably 4 to 10 times the beam diameter at the focal position of the laser beam 10 to be irradiated, more preferably. 5 to 8 times.
  • the area of the region where the crack is formed is 1/10 or more times the area of the region where the internal light scattering structure 2 is formed, thereby increasing the haze ratio of the glass substrate 1. In view of light scattering performance for improving the performance of the solar cell, it is more preferably 1/8 or more.
  • the crack area is roughly the region.
  • the crack area is 1/10 or more.
  • the area of the cracked region is 8/10 times or less, more preferably 7/10 times or less the area of the region where the internal light scattering structure 2 is formed. From the viewpoint of maintaining the strength of the glass.
  • the area of the cracked region in the plane of the glass substrate 1 is preferably 4/10 times or more the area of the region where the internal light scattering structure 2 is formed. .
  • FIG. 10 is a characteristic diagram showing the dependence of the haze ratio of the glass substrate 1 on the wavelength of incident light when the lateral pitch Pw of the laser irradiation pattern is changed.
  • the wavelength dependence of the haze ratio when the lateral pitch Pw of the laser irradiation pattern 13 is changed to 10 ⁇ m and 20 ⁇ m is shown.
  • the irradiation condition of the laser beam 10 is a two-dimensional pattern with a vertical pitch of 26.7 ⁇ m, and the power of the laser beam 10 is 0.6 W.
  • the scattering characteristics of the internal light scattering structure can be changed also by changing the lateral pitch Pw.
  • FIG. 11 is a characteristic diagram showing the dependence of the haze ratio of the glass substrate 1 on the wavelength of incident light due to the difference in the three-dimensional structure of the internal light scattering structure 2.
  • the wavelength dependence of the haze ratio when the three-dimensional internal light scattering structure 2 is formed by changing the focal position of the laser light irradiated to the glass substrate 1 inside the glass substrate 1 is shown. .
  • the power of the laser beam 10 is 0.6W.
  • the irradiation conditions of the laser beam 10 are a vertical pitch Pl of 26.7 ⁇ m and a horizontal pitch Pw of 20 ⁇ m.
  • the result in the case of a three-dimensional pattern in which the focal position is further shifted by 0.8 mm in the thickness direction to form a three-stage internal light scattering structure 2 is shown.
  • the scattering characteristics of the internal light scattering structure 2 can be changed also by forming the internal light scattering structure 2 three-dimensionally.
  • FIG. 12 shows the haze ratio dependence of the open-circuit voltage between the thin film solar cell formed on the glass substrate 1 having the internal light scattering structure 2 and the thin film solar cell formed on the surface transparent electrode 3 having irregularities.
  • the laser light 10 is used to form the internal light scattering structure 2 in the flat glass substrate 1 and a thin film solar cell is formed on the flat surface of the glass substrate 1, and the surface is transparent.
  • the scattering characteristics (wavelength) of the open voltage indicating the power generation characteristics of the thin film solar cell
  • the haze ratio for 800 nm light is shown.
  • the surface transparent electrode 3 having a different haze ratio was formed by changing the etching time for forming the unevenness, and a thin film solar cell was formed thereon.
  • substrates having different haze ratios are formed by changing the laser irradiation conditions and the number of steps of the scattering structure as shown in FIGS. A solar cell was formed. Note that the normalized open circuit voltage on the vertical axis in FIG. 12 is standardized by the open circuit voltage when a thin film solar cell is formed on a flat glass substrate 1 that does not have the internal light scattering structure 2.
  • both thin-film solar cells tend to decrease the open circuit voltage as the haze ratio for light with a wavelength of 800 nm increases, but the glass substrate in which the internal light scattering structure 2 is formed inside the glass substrate 1. It can be seen that the open-circuit voltage of the upper thin-film solar cell has a gentler decreasing tendency and less deterioration in characteristics due to an increase in scattering characteristics.
  • FIG. 13 is a characteristic diagram showing an example of wavelength dependency of light transmittance in a glass substrate on which the internal light scattering structure 2 according to the first embodiment is formed by laser irradiation.
  • the glass substrate having the internal light scattering structure 2 substrates having different haze ratios were formed by changing the laser irradiation conditions and the number of steps of the scattering structure as shown in FIGS.
  • the light transmittance in the glass substrate in which the internal light scattering structure 2 is not formed is set as a reference (100%).
  • the light transmittance of the glass substrate is maintained at a high light transmittance of 85% to 91% in the wavelength region of 350 nm to 1500 nm. I understand.
  • the laser light is periodically irradiated in a predetermined pattern, so that the cracks in the internal light scattering structure 2 to be formed are formed.
  • the portion of the internal light scattering structure 2 can easily reflect light having a specific wavelength that reflects the predetermined geometric arrangement pattern.
  • FIG. 14 is a characteristic diagram showing the difference in the reflection spectrum of the thin-film solar cell depending on the laser irradiation conditions when the internal light scattering structure 2 is formed.
  • the reflection spectrum of the thin film solar cell produced on the glass substrate 1 which formed the internal light-scattering structure 2 on specific conditions is shown.
  • the condition 1 is that the irradiation light is 0.7 W, the vertical pitch Pl is 13 ⁇ m, and the horizontal pitch Pw is 10 ⁇ m.
  • the condition 3 is a case where the internal light scattering structure 2 is not formed. It is.
  • the thin film solar cell itself is formed on the flat glass substrate 1, but the wavelength at which the reflected light has a peak due to the internal light scattering structure 2 formed inside the glass substrate 1.
  • the area is different.
  • condition 3 when a thin film solar cell is fabricated on a flat glass substrate 1 having no internal light scattering structure 2, the reflected light (reflection spectrum) seen from the glass surface has a peak in the red region.
  • the thin film solar cell seen from the glass surface shows a reddish hue.
  • Condition 2 since the reflected light (reflection spectrum) seen from the glass surface has a peak in the green part, the thin film solar cell seen from the glass surface has a greenish hue. Show.
  • the thin film solar cell viewed from the glass surface shows a bluish hue.
  • the hue of the thin-film solar cell can be changed by changing the pattern of the geometric arrangement of the cracks in the internal light scattering structure 2 by changing the periodic pattern of the laser light irradiation.
  • the flat glass substrate 1 on which the integrated thin film solar cell 6 is formed has the internal light scattering structure 2 that scatters light, and the flat glass substrate 1 is transparent.
  • the surface transparent electrode 3, the power generation layer 4, and the back electrode 5 made of a conductive film, defects in the power generation layer 4 due to the unevenness of the transparent conductive film are suppressed and power generation characteristics are improved.
  • a transparent conductive film is formed on the flat glass substrate 1, the fall of the electric power generation characteristic resulting from the defect of a transparent conductive film is suppressed.
  • the hue when the integrated thin film solar cell 6 is viewed from the glass surface is changed. Can do.
  • FIG. FIG. 15 is sectional drawing which shows schematic structure of the crystalline solar cell module concerning Embodiment 2 of this invention.
  • a crystalline solar cell using, for example, a semiconductor crystal substrate such as polycrystalline silicon or single crystal silicon on the windshield 18 in which the internal light scattering structure 2 is formed.
  • Battery cell 19 is arranged.
  • the windshield 18 in which the internal light scattering structure 2 is formed is a protective member on the light incident side.
  • the crystalline solar battery cell 19 is configured by forming electrodes (surface electrode, back electrode) on both surfaces of a silicon substrate having a PN junction, for example.
  • the individual crystalline solar cells 19 are electrically connected in series by conductive connection wirings 20 connected to electrodes.
  • extraction wirings 23 for extracting currents and voltages generated in the crystalline solar cells 19 are connected to the connection wirings 20 at both ends.
  • crystalline solar cells 19 and the like are arranged on the windshield 18, and the windshield 18 and the weather-resistant back film 25 are joined together with a filler 24 such as an EVA film, thereby obtaining the second embodiment.
  • a filler 24 such as an EVA film
  • FIG. 16 is a cross-sectional view showing a schematic configuration of a conventional crystalline solar cell having an uneven surface shape.
  • a conventional crystalline solar cell module a fine concavo-convex structure is formed on the surface on the light incident side of the crystalline solar cell 19 by etching or blasting in order to improve power generation characteristics. For this reason, the formation process of the crystalline solar cell has been complicated.
  • FIG. 17 is a cross-sectional view showing a schematic configuration of the crystalline solar cell module according to the second embodiment using the windshield 18 having the internal light scattering structure 2, and is an enlarged view of a part of FIG. It is an enlarged view.
  • the internal light scattering structure 2 that scatters light is formed inside the windshield 18, the surface of the crystalline solar cell 19 on the light incident side is particularly large. There is no need to form a light scattering structure, and the manufacturing process of the crystalline solar cell can be simplified.
  • the internal light scattering structure 2 in the windshield 18 of this crystalline solar cell module can be produced by the same method as shown in the first embodiment, and the scattering characteristics are varied depending on the conditions for forming the internal light scattering structure 2. It is possible to control. Further, as shown in Embodiment 1, it is possible to change the spectrum of reflected light viewed from the glass surface by changing the geometric arrangement pattern of the cracks constituting the internal light scattering structure 2. Even in a crystalline solar cell module, the color of the module can be changed.
  • the scattered solar light is transmitted to the crystalline solar cell. 19 can be made incident. Thereby, it is not necessary to form uneven
  • the internal light scattering structure 2 inside the windshield 18 a function of reflecting light of a specific wavelength, the hue when the crystalline solar cell 19 is viewed from the glass surface is changed. Can do.
  • the glass substrate forming the internal light scattering structure 2 includes a stress layer such as tempered glass, if a crack layer that causes internal scattering is formed inside the stress layer, the glass breaks due to this crack. There is a fear. Therefore, the focal point of the condensed laser beam irradiated to form a crack in such a glass substrate needs to be at a position other than the stress layer of the glass substrate.
  • the solar cell according to the present invention can prevent deterioration in power generation characteristics due to the structure that scatters light, can control the hue when viewed from the glass surface, and is manufactured at a low cost by a simple process. It is useful for realizing possible solar cells.

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

This solar cell is provided with a glass substrate (1) on the light incoming side of a power generating layer (4) that performs photoelectric conversion. The glass substrate (1) has inside thereof an internal light scattering structure (2), which is formed by converging and radiating laser beams, and which scatters light inputted to the glass substrate (1), and the glass substrate transmits light to the power generating layer (4) side, said light having been scattered by means of the internal light scattering structure (2). Consequently, the solar cell, which prevents power generation characteristics from deteriorating due to a structure that scatters light, can control color shade viewed from the glass surface, and can be manufactured by simple steps at low cost, is obtained.

Description

太陽電池およびその製造方法Solar cell and method for manufacturing the same

 本発明は、太陽電池およびその製造方法に関する。 The present invention relates to a solar cell and a manufacturing method thereof.

 光エネルギーを電気エネルギーに変換する光電変換装置として、基板上に、第1導電層、光電変換層、第2導電層が順に積層された薄膜太陽電池が知られている。光電変換層は半導体からなり、p型層、反対側にn型層、その間を高抵抗のi層を有するpinダイオード構造のものが用いられる。光電変換層の半導体材料としては、シリコンを主成分とするアモルファスシリコンや微結晶シリコン、シリコン-ゲルマニウムの混合材料などがある。これらの膜の光電変換層は、たとえばシランガスなどシリコンを含む原料ガスを用いるプラズマCVD法などで形成することができる。また、シリコン半導体材料だけでなく化合物半導体材料も用いられる。 As a photoelectric conversion device that converts light energy into electrical energy, a thin film solar cell in which a first conductive layer, a photoelectric conversion layer, and a second conductive layer are sequentially stacked on a substrate is known. The photoelectric conversion layer is made of a semiconductor and has a p-type layer, an n-type layer on the opposite side, and a pin diode structure having a high-resistance i layer therebetween. Examples of the semiconductor material for the photoelectric conversion layer include amorphous silicon containing silicon as a main component, microcrystalline silicon, and a silicon-germanium mixed material. The photoelectric conversion layer of these films can be formed by, for example, a plasma CVD method using a source gas containing silicon such as silane gas. Further, not only silicon semiconductor materials but also compound semiconductor materials are used.

 光電変換層と基板との配置によって、光が入射する側を基板とするスーパーストレート構造と、光が入射する側を第2導電層とするサブストレート構造とがある。スーパーストレート構造の場合は、透明な絶縁材料としてガラスを用いた基板が一般に使用される。 Depending on the arrangement of the photoelectric conversion layer and the substrate, there are a superstrate structure in which the light incident side is the substrate and a substrate structure in which the light incident side is the second conductive layer. In the case of the super straight structure, a substrate using glass as a transparent insulating material is generally used.

 第1導電層と第2導電層とは、光電変換層が変換した電力を取り出す電極となる。第1導電層と第2導電層とのうち、光が入射する側にある表面電極は透明導電材料などからなる透明電極とするのが一般的である。また、第1導電層と第2導電層とのうち、光が入射する側と反対側にある裏面電極は光を光電変換層側に反射させる高反射率の金属材料などが用いられる。 The first conductive layer and the second conductive layer serve as electrodes for taking out the electric power converted by the photoelectric conversion layer. Of the first conductive layer and the second conductive layer, the surface electrode on the light incident side is generally a transparent electrode made of a transparent conductive material or the like. In addition, among the first conductive layer and the second conductive layer, the back electrode on the side opposite to the light incident side is made of a highly reflective metal material that reflects light toward the photoelectric conversion layer.

 また、薄膜太陽電池では、基板上の光電変換層は溝などで複数の単位セルごとに分割された集積型構造が用いられる。光電変換層や電極を分割する溝はレーザビームを照射して、その熱で照射部の光電変換層や電極を除去させるレーザースクライブ法などを用いて形成される。集積型構造では、溝によって分割された薄膜太陽電池の素子の第1導電層と、その隣の素子の第2導電層とが光電変換層に形成された溝内で直列に接続される構造が一般的である。 In the thin film solar cell, an integrated structure in which the photoelectric conversion layer on the substrate is divided into a plurality of unit cells by grooves or the like is used. The groove for dividing the photoelectric conversion layer and the electrode is formed using a laser scribing method in which a laser beam is irradiated and the photoelectric conversion layer and the electrode in the irradiated portion are removed by the heat. In the integrated structure, the first conductive layer of the element of the thin film solar cell divided by the groove and the second conductive layer of the adjacent element are connected in series in the groove formed in the photoelectric conversion layer. It is common.

 このような集積型薄膜太陽電池の発電層は、その発電効率を高めるために、散乱された光が発電層に入射するように、微細な凹凸からなるテクスチャー構造を有する例えば酸化亜鉛(ZnO)系や酸化スズ(SnO)系の透明導電性膜上に形成される。これらの凹凸を有する透明導電性膜は、一般的には平坦な透明ガラス基板上に、CVD法による製膜や、スパッタリング法で成膜した後にエッチングを行なうことで形成することができる。 The power generation layer of such an integrated thin film solar cell has, for example, a zinc oxide (ZnO) system having a textured structure with fine irregularities so that scattered light is incident on the power generation layer in order to increase the power generation efficiency. Or a tin oxide (SnO 2 ) -based transparent conductive film. The transparent conductive film having these irregularities can be generally formed on a flat transparent glass substrate by film formation by a CVD method or by etching after forming a film by a sputtering method.

 また、表面が凹凸を有する透明導電性膜は、例えば特許文献1や特許文献2に示されるようにガラス基板の表面をサンドブラストで粗面化し、その上に透明導電性膜をスパッタリング法等で成膜することにより、ガラス基板の凹凸形状を反映した表面の凹凸構造を有する透明導電性膜を形成することができる。これらの特許文献1や特許文献2に示されている薄膜太陽電池はサブストレート型であるが、スーパーストレート型の薄膜太陽電池にも応用できる。 In addition, as shown in Patent Document 1 and Patent Document 2, for example, as shown in Patent Document 1 and Patent Document 2, the surface of the transparent conductive film is roughened by sandblasting, and the transparent conductive film is formed thereon by a sputtering method or the like. By forming the film, a transparent conductive film having a concavo-convex structure on the surface reflecting the concavo-convex shape of the glass substrate can be formed. These thin film solar cells shown in Patent Document 1 and Patent Document 2 are substrate type, but can also be applied to super straight type thin film solar cells.

特開2003-69059号公報JP 2003-69059 A 特開2004-82285号公報JP 2004-82285 A

 しかしながら、表面に凹凸構造を有する透明導電膜上に薄膜太陽電池を形成した場合には、その凹凸形状に起因して発電層に欠陥が発生し、発電特性が低下する場合がある。また、凹凸形状を有するガラス基板上に透明導電性膜を形成した場合にも、基板の凹凸に起因した欠陥が透明導電性膜に発生して透明導電性膜の電気抵抗が増大するため、発電特性の低下が引き起こされる。 However, when a thin film solar cell is formed on a transparent conductive film having a concavo-convex structure on the surface, defects may occur in the power generation layer due to the concavo-convex shape, and the power generation characteristics may deteriorate. In addition, when a transparent conductive film is formed on a glass substrate having an uneven shape, defects due to the unevenness of the substrate occur in the transparent conductive film, increasing the electrical resistance of the transparent conductive film. Degradation of characteristics is caused.

 また、結晶系シリコン太陽電池セルを直列接続することで形成される結晶系の太陽電池モジュールにおいては、散乱した光をシリコン太陽電池セルに取り入れるために、結晶系太陽電池セルの表面にエッチング等により凹凸を設けていた。このため、このエッチング工程に起因して工程の複雑化とコストアップが発生していた。さらに、従来の結晶系の太陽電池モジュールでは光入射側がガラス基板で覆われるが、発電層で吸収されない波長領域の光がガラス基板側に戻ってくるため、ガラス基板面から発電層を見た際の色合いを制御することができなかった。 In addition, in a crystalline solar cell module formed by connecting crystalline silicon solar cells in series, the surface of the crystalline solar cell is etched or the like in order to incorporate scattered light into the silicon solar cell. Concavities and convexities were provided. For this reason, the process is complicated and the cost is increased due to the etching process. Furthermore, in the conventional crystalline solar cell module, the light incident side is covered with a glass substrate, but light in a wavelength region that is not absorbed by the power generation layer returns to the glass substrate side, so when the power generation layer is viewed from the glass substrate surface It was not possible to control the hue of.

 本発明は、上記に鑑みてなされたものであって、光を散乱させる構造に起因した発電特性の低下が防止され、ガラス面から見た際の色合いを制御可能であり、簡略な工程で安価に製造可能な太陽電池およびその製造方法を得ることを目的とする。 The present invention has been made in view of the above, and it is possible to prevent a decrease in power generation characteristics due to a structure that scatters light, and to control the hue when viewed from the glass surface. It is an object of the present invention to obtain a solar cell that can be manufactured and a manufacturing method thereof.

 上述した課題を解決し、目的を達成するために、本発明にかかる太陽電池は、光電変換を行う発電層の光入射側にガラス基板を備える太陽電池であって、前記ガラス基板は、レーザー光を集光照射することにより形成されて前記ガラス基板に入射した光を散乱する光散乱構造を内部に有し、前記光散乱構造で散乱した光を前記発電層側に透過させること、を特徴とする。 In order to solve the above-described problems and achieve the object, a solar cell according to the present invention is a solar cell including a glass substrate on a light incident side of a power generation layer that performs photoelectric conversion, and the glass substrate includes laser light. It has a light scattering structure that scatters light incident on the glass substrate formed by focusing and irradiating the glass substrate, and transmits the light scattered by the light scattering structure to the power generation layer side. To do.

 本発明によれば、光を散乱させる構造に起因した発電特性の低下が防止され、ガラス面から見た際の色合いを制御可能な太陽電池を簡略な工程で安価に得ることができる、という効果を奏する。 According to the present invention, it is possible to prevent a decrease in power generation characteristics due to a structure that scatters light, and to obtain a solar cell capable of controlling the hue when viewed from the glass surface at a low cost by a simple process. Play.

図1は、本発明の実施の形態1にかかる集積型薄膜太陽電池モジュールの概略構成を示す断面図である。FIG. 1 is a cross-sectional view showing a schematic configuration of an integrated thin-film solar cell module according to Embodiment 1 of the present invention. 図2は、本実施の形態にかかる薄膜太陽電池の概略構成を示す断面図である。FIG. 2 is a cross-sectional view showing a schematic configuration of the thin-film solar cell according to the present embodiment. 図3は、光散乱構造として表面に凹凸形状を有する表面透明電極がガラス基板上に形成された従来の薄膜太陽電池の概略構成を示す断面図である。FIG. 3 is a cross-sectional view showing a schematic configuration of a conventional thin film solar cell in which a surface transparent electrode having a concavo-convex shape on a surface as a light scattering structure is formed on a glass substrate. 図4は、光散乱構造として凹凸形状を有するガラス基板上に形成された従来の薄膜太陽電池の概略構成を示す断面図である。FIG. 4 is a cross-sectional view showing a schematic configuration of a conventional thin film solar cell formed on a glass substrate having a concavo-convex shape as a light scattering structure. 図5は、レーザー照射によりガラス基板内に光散乱構造を形成する方法の概念を模式的に示す断面図である。FIG. 5 is a cross-sectional view schematically showing the concept of a method for forming a light scattering structure in a glass substrate by laser irradiation. 図6は、ガラス基板に光散乱構造を形成するためのレーザー照射パターンの一例を示す概念図である。FIG. 6 is a conceptual diagram showing an example of a laser irradiation pattern for forming a light scattering structure on a glass substrate. 図7は、ガラス基板の内部に三次元的な光散乱構造のパターンを形成する方法の概念を模式的に示す断面図である。FIG. 7 is a cross-sectional view schematically showing the concept of a method for forming a three-dimensional light scattering structure pattern inside a glass substrate. 図8は、ガラス基板に照射するレーザー光のパワーを変化させた場合における、ガラス基板の散乱特性を示すヘイズ率の入射光の波長に対する依存性を示す特性図である。FIG. 8 is a characteristic diagram showing the dependence of the haze ratio indicating the scattering characteristics of the glass substrate on the wavelength of the incident light when the power of the laser light applied to the glass substrate is changed. 図9は、レーザー照射パターンの縦ピッチを変化させた場合における、ガラス基板のヘイズ率の入射光の波長に対する依存性を示す特性図である。FIG. 9 is a characteristic diagram showing the dependence of the haze ratio of the glass substrate on the wavelength of incident light when the vertical pitch of the laser irradiation pattern is changed. 図10は、レーザー照射パターンの横ピッチを変化させた場合における、ガラス基板のヘイズ率の入射光の波長に対する依存性を示す特性図である。FIG. 10 is a characteristic diagram showing the dependence of the haze ratio of the glass substrate on the wavelength of incident light when the lateral pitch of the laser irradiation pattern is changed. 図11は、光散乱構造の三次元的な構造の相違による、ガラス基板のヘイズ率の入射光の波長に対する依存性を示す特性図である。FIG. 11 is a characteristic diagram showing the dependence of the haze ratio of the glass substrate on the wavelength of incident light due to the difference in the three-dimensional structure of the light scattering structure. 図12は、光散乱構造を有するガラス基板上に形成した薄膜太陽電池と、凹凸を有する表面透明電極上に形成した薄膜太陽電池と、の開放電圧のヘイズ率依存性を示す特性図である。FIG. 12 is a characteristic diagram showing the haze ratio dependence of the open-circuit voltage between a thin film solar cell formed on a glass substrate having a light scattering structure and a thin film solar cell formed on a surface transparent electrode having irregularities. 図13は、レーザー照射により本発明の実施の形態1にかかる内部散乱構造を形成したガラス基板の光透過率の一例を示す図である。FIG. 13 is a diagram illustrating an example of the light transmittance of the glass substrate on which the internal scattering structure according to the first embodiment of the present invention is formed by laser irradiation. 図14は、光散乱構造を形成する際のレーザー照射条件による薄膜太陽電池の反射スペクトルの相違を示す特性図である。FIG. 14 is a characteristic diagram showing the difference in the reflection spectrum of the thin-film solar cell depending on the laser irradiation conditions when forming the light scattering structure. 図15は、本発明の実施の形態2にかかる結晶系太陽電池モジュールの概略構成を示す断面図である。FIG. 15: is sectional drawing which shows schematic structure of the crystalline solar cell module concerning Embodiment 2 of this invention. 図16は、凹凸表面形状を有する従来の結晶系太陽電池の概略構成を示す断面図である。FIG. 16 is a cross-sectional view showing a schematic configuration of a conventional crystalline solar cell having an uneven surface shape. 図17は、本発明の実施の形態2にかかる結晶系太陽電池モジュールの概略構成を示す断面図である。FIG. 17: is sectional drawing which shows schematic structure of the crystalline solar cell module concerning Embodiment 2 of this invention.

 以下に、本発明にかかる太陽電池およびその製造方法の実施の形態を図面に基づいて詳細に説明する。なお、本発明は以下の記述に限定されるものではなく、本発明の要旨を逸脱しない範囲において適宜変更可能である。また、以下に示す図面においては、理解の容易のため、各部材の縮尺が実際とは異なる場合がある。各図面間においても同様である。また、平面図であっても、図面を見易くするためにハッチングを付す場合がある。 Hereinafter, embodiments of a solar cell and a manufacturing method thereof according to the present invention will be described in detail with reference to the drawings. In addition, this invention is not limited to the following description, In the range which does not deviate from the summary of this invention, it can change suitably. In the drawings shown below, the scale of each member may be different from the actual scale for easy understanding. The same applies between the drawings. Further, even a plan view may be hatched to make the drawing easy to see.

実施の形態1.
 図1は、本発明の実施の形態1にかかる集積型薄膜太陽電池モジュールの概略構成を示す断面図である。図1に示されるように、実施の形態1にかかる集積型薄膜太陽電池モジュールは、透光性絶縁基板であって入射した光を散乱させるための内部光散乱構造2を有するガラス基板1上に複数の集積型薄膜太陽電池6が形成されている。集積型薄膜太陽電池6は、内部光散乱構造2を有するガラス基板1上に表面透明電極3、発電層4、裏面電極5が順次積層された複数の薄膜太陽電池セル7が電気的に直列に接続されて構成される。
Embodiment 1 FIG.
FIG. 1 is a cross-sectional view showing a schematic configuration of an integrated thin-film solar cell module according to Embodiment 1 of the present invention. As shown in FIG. 1, the integrated thin-film solar cell module according to the first embodiment is a translucent insulating substrate on a glass substrate 1 having an internal light scattering structure 2 for scattering incident light. A plurality of integrated thin-film solar cells 6 are formed. In the integrated thin film solar cell 6, a plurality of thin film solar cells 7 in which a surface transparent electrode 3, a power generation layer 4, and a back electrode 5 are sequentially stacked on a glass substrate 1 having an internal light scattering structure 2 are electrically connected in series. Connected and configured.

 集積型薄膜太陽電池6は、従来公知の方法により作製できる。以下においては、シリコン系の集積型薄膜太陽電池を例に集積型薄膜太陽電池6の作製方法について簡単に説明するが、これに限定されない。また、本実施の形態にかかる集積型薄膜太陽電池モジュールにおいては、シリコン系の集積型薄膜太陽電池以外にも、他の化合物系(例えばCdTe、CIGS)の集積型薄膜太陽電池を使用することができる。 The integrated thin film solar cell 6 can be manufactured by a conventionally known method. In the following, a method for manufacturing the integrated thin film solar cell 6 will be briefly described by taking a silicon-based integrated thin film solar cell as an example, but the present invention is not limited thereto. Further, in the integrated thin film solar cell module according to the present embodiment, in addition to the silicon integrated thin film solar cell, other compound-based (for example, CdTe, CIGS) integrated thin film solar cells may be used. it can.

 まず、内部光散乱構造2を有するガラス基板1を形成する。内部光散乱構造2を有するガラス基板1の形成方法は後述する。次に、内部光散乱構造2を有するガラス基板1の平坦な面上に例えばCVD法やスパッタリング法によりSnO膜やZnO系膜などの透明導電性膜からなる表面透明電極3を成膜する。次に、この表面透明電極3をレーザースクライブ等により、隣接する薄膜太陽電池セル7の領域に跨るように分離してパターニングする。 First, the glass substrate 1 having the internal light scattering structure 2 is formed. A method for forming the glass substrate 1 having the internal light scattering structure 2 will be described later. Next, a surface transparent electrode 3 made of a transparent conductive film such as a SnO 2 film or a ZnO-based film is formed on a flat surface of the glass substrate 1 having the internal light scattering structure 2 by, for example, a CVD method or a sputtering method. Next, the surface transparent electrode 3 is separated and patterned by laser scribing or the like so as to straddle the region of the adjacent thin film solar cells 7.

 次に、表面透明電極3をパターニングしたガラス基板1上に例えばCVD法により発電層4を形成する。この発電層4は、第1導電層、光電変換層、第2導電層が順次積層されて構成される単位構成要素を少なくとも1つ以上含んでいる。また、各単位構成要素間には、光閉じ込めの効果を有するSiOx等の中間膜が形成されていてもよい。次に、各薄膜太陽電池セル7の領域において表面透明電極3の一部が露出するように、レーザースクライブ等により発電層4にスクライブ溝を形成して発電層4を分離する。 Next, the power generation layer 4 is formed on the glass substrate 1 on which the surface transparent electrode 3 is patterned by, for example, the CVD method. The power generation layer 4 includes at least one unit component configured by sequentially laminating a first conductive layer, a photoelectric conversion layer, and a second conductive layer. Further, an intermediate film such as SiOx having an optical confinement effect may be formed between the unit constituent elements. Next, the power generation layer 4 is separated by forming a scribe groove in the power generation layer 4 by laser scribing or the like so that a part of the surface transparent electrode 3 is exposed in the region of each thin film solar cell 7.

 この分離が完了した後に、例えばZnO系膜などの透明導電性膜と例えばAg膜などの金属電極膜との積層膜からなる裏面電極5をガラス基板1上に製膜する。この裏面電極5は、発電層4に形成されたスクライブ溝内にも埋め込まれることで、スクライブ溝を介して表面透明電極3と電気的に接続される。 After this separation is completed, a back electrode 5 made of a laminated film of a transparent conductive film such as a ZnO-based film and a metal electrode film such as an Ag film is formed on the glass substrate 1. The back electrode 5 is also embedded in a scribe groove formed in the power generation layer 4 so as to be electrically connected to the surface transparent electrode 3 through the scribe groove.

 次に、発電層4と裏面電極5とをレーザースクライブ等により薄膜太陽電池セル7毎に分離する。そして、ガラス基板1の外周部での電気的な絶縁を確保するために、ガラス基板1の端部の表面透明電極3と発電層4と裏面電極5とをレーザー加工やサンドブラスト処理により除去することで、隣接する薄膜太陽電池セル7同士が電気的に直列接続した集積型薄膜太陽電池6が形成される。 Next, the power generation layer 4 and the back electrode 5 are separated for each thin film solar cell 7 by laser scribing or the like. And in order to ensure the electrical insulation in the outer peripheral part of the glass substrate 1, the surface transparent electrode 3, the electric power generation layer 4, and the back surface electrode 5 of the edge part of the glass substrate 1 are removed by laser processing or a sandblast process. Thus, an integrated thin film solar cell 6 in which adjacent thin film solar cells 7 are electrically connected in series is formed.

 次に、集積型薄膜太陽電池6で発生した電流・電圧を取り出すための取り出し配線23を集積型薄膜太陽電池6の両端に位置する薄膜太陽電池セル7の裏面電極5に接続する。次に、集積型薄膜太陽電池6を形成したガラス基板1とバックガラス22を封止材21を介して接合することにより集積型薄膜太陽電池モジュールが得られる。なお、封止材21の代わりにエチレン酢酸ビニル共重合体(EVA)ラミネート材等の充填材と耐候性を有するバックフィルムとを用いて集積型薄膜太陽電池モジュールを構成することもできる。 Next, the extraction wiring 23 for extracting the current / voltage generated in the integrated thin film solar cell 6 is connected to the back electrode 5 of the thin film solar cell 7 positioned at both ends of the integrated thin film solar cell 6. Next, an integrated thin film solar cell module is obtained by bonding the glass substrate 1 on which the integrated thin film solar cell 6 is formed and the back glass 22 through a sealing material 21. Note that an integrated thin-film solar cell module can also be configured by using a filler such as an ethylene vinyl acetate copolymer (EVA) laminate material and a weather-resistant back film instead of the sealing material 21.

 図2は、本実施の形態にかかる薄膜太陽電池の概略構成を示す断面図であり、図1に示した薄膜太陽電池セル7の一部を拡大して示す要部拡大図である。この薄膜太陽電池は、上述したように内部光散乱構造2を有するガラス基板1上に表面透明電極3、発電層4、裏面電極5が順次積層されて構成されている。表面透明電極3は平坦なガラス基板1上に形成されているため、膜の成長異常や粒界欠陥が発生しない。このため、この薄膜太陽電池の表面透明電極3は、後述する図4に示されるようにガラステクスチャ基板9上に形成された表面透明電極3aと比較して良好な電気伝導特性を有している。 FIG. 2 is a cross-sectional view showing a schematic configuration of the thin-film solar battery according to the present embodiment, and is an enlarged view of a main part showing a part of the thin-film solar battery cell 7 shown in FIG. As described above, the thin-film solar cell is configured by sequentially laminating the surface transparent electrode 3, the power generation layer 4, and the back electrode 5 on the glass substrate 1 having the internal light scattering structure 2. Since the surface transparent electrode 3 is formed on the flat glass substrate 1, no film growth abnormality or grain boundary defect occurs. For this reason, the surface transparent electrode 3 of this thin film solar cell has a favorable electrical conduction characteristic compared with the surface transparent electrode 3a formed on the glass texture board | substrate 9 as FIG. 4 mentioned later shows. .

 また、この薄膜太陽電池では、後述する図3に示されるように表面透明電極8自体の表面に凹凸形状を形成する場合と比較すると、製膜に必要な膜厚が1/2以下で済むため、スループットやコストの面からも有利となる。更に、製膜された表面透明電極3の表面が平坦な形状を有しているため、その上に形成される発電層4には、表面透明電極の凹凸やガラス基板の凹凸に起因した欠陥が発生しない。このため、この欠陥起因の発電特性の低下が抑制される。そして、この薄膜太陽電池では、内部光散乱構造2を有するガラス基板1に入射した光は、内部光散乱構造2によって散乱された後にガラス基板1を透過し、表面透明電極3を介して発電層4に入射する。この散乱された光は発電層4に対して斜めに入射し、発電層4における光路長が発電層4の膜厚よりも長くなる。このため、発電層4における発電効率が向上する。 Further, in this thin film solar cell, as shown in FIG. 3 to be described later, the film thickness required for film formation is less than ½ as compared with the case where an uneven shape is formed on the surface of the surface transparent electrode 8 itself. This is also advantageous in terms of throughput and cost. Furthermore, since the surface of the formed surface transparent electrode 3 has a flat shape, the power generation layer 4 formed thereon has defects due to the unevenness of the surface transparent electrode and the unevenness of the glass substrate. Does not occur. For this reason, the fall of the power generation characteristic resulting from this defect is suppressed. In this thin film solar cell, light incident on the glass substrate 1 having the internal light scattering structure 2 is scattered by the internal light scattering structure 2, then passes through the glass substrate 1, and is generated through the surface transparent electrode 3. 4 is incident. The scattered light is obliquely incident on the power generation layer 4, and the optical path length in the power generation layer 4 is longer than the film thickness of the power generation layer 4. For this reason, the power generation efficiency in the power generation layer 4 is improved.

 次に、比較のため、従来の薄膜太陽電池について説明する。図3は、光散乱構造として表面に凹凸形状を有する表面透明電極8がガラス基板1上に形成された従来の薄膜太陽電池の概略構成を示す断面図である。この従来の薄膜太陽電池においては、ガラス基板1上に、該ガラス基板1と反対側の表面に凹凸形状を有する表面透明電極8が形成されている。この凹凸形状を有する表面透明電極8は、CVD法によるSnO膜またはZnO系膜の成膜や、ZnO系の平坦膜を希塩酸等でエッチングすることで形成される。この表面透明電極8上には、発電層4と裏面電極5とが順次積層されている。 Next, a conventional thin film solar cell will be described for comparison. FIG. 3 is a cross-sectional view showing a schematic configuration of a conventional thin film solar cell in which a surface transparent electrode 8 having a concavo-convex shape on the surface as a light scattering structure is formed on a glass substrate 1. In this conventional thin film solar cell, a surface transparent electrode 8 having a concavo-convex shape is formed on a glass substrate 1 on the surface opposite to the glass substrate 1. The surface transparent electrode 8 having the uneven shape is formed by forming a SnO 2 film or a ZnO-based film by a CVD method, or etching a ZnO-based flat film with diluted hydrochloric acid or the like. On the surface transparent electrode 8, the power generation layer 4 and the back electrode 5 are sequentially laminated.

 この様に凹凸形状を有する表面透明電極8上に発電層4を形成した場合には、表面透明電極8の凸頂部や凹底部を起点に発電層4に欠陥が発生し、この欠陥に起因した発電特性の低下が発生する。また、表面透明電極8に凹凸形状を形成するためにSnOやZnO系膜をCVD法で製膜した場合は、所定の凹凸形状を得るためには、これらの膜を1μm程度の膜厚で製膜する必要がある。また、ZnO系膜をエッチングすることにより表面透明電極8に凹凸形状を形成する場合においても、エッチング前のZnO系膜の膜厚は1μm程度必要である。したがって、これらの場合は、スループットが悪化し、コストが増加する。 When the power generation layer 4 is formed on the surface transparent electrode 8 having the concavo-convex shape in this way, a defect occurs in the power generation layer 4 starting from the convex top portion or the concave bottom portion of the surface transparent electrode 8, which is caused by this defect. A decrease in power generation characteristics occurs. In addition, when SnO 2 or a ZnO-based film is formed by the CVD method in order to form a concavo-convex shape on the surface transparent electrode 8, in order to obtain a predetermined concavo-convex shape, these films have a thickness of about 1 μm. It is necessary to form a film. In addition, even when the concavo-convex shape is formed on the surface transparent electrode 8 by etching the ZnO-based film, the film thickness of the ZnO-based film before etching needs to be about 1 μm. Therefore, in these cases, the throughput deteriorates and the cost increases.

 次に、比較のため、従来の他の薄膜太陽電池について説明する。図4は、光散乱構造として凹凸形状を有するガラス基板(以下、ガラステクスチャ基板9と呼ぶ)上に形成された従来の薄膜太陽電池の概略構成を示す断面図である。この従来の薄膜太陽電池においては、ガラステクスチャ基板9自体に凹凸形状を持たせることで、入射する光を散乱させる。この薄膜太陽電池においては、ガラステクスチャ基板9の凹凸形状の上に表面透明電極3aが形成されている。表面透明電極3aとしては、SnO膜またはZnO系膜がCVD法やスパッタリング法により製膜される。この表面透明電極3a上には、発電層4と裏面電極5とが順次積層されている。 Next, for comparison, another conventional thin film solar cell will be described. FIG. 4 is a cross-sectional view showing a schematic configuration of a conventional thin film solar cell formed on a glass substrate (hereinafter referred to as a glass texture substrate 9) having an uneven shape as a light scattering structure. In this conventional thin film solar cell, the glass texture substrate 9 itself has an uneven shape to scatter incident light. In this thin film solar cell, the surface transparent electrode 3 a is formed on the concavo-convex shape of the glass texture substrate 9. As the surface transparent electrode 3a, a SnO 2 film or a ZnO-based film is formed by a CVD method or a sputtering method. On the surface transparent electrode 3a, a power generation layer 4 and a back electrode 5 are sequentially laminated.

 この様にガラステクスチャ基板9上に形成された表面透明電極3aは、ガラステクスチャ基板9の凹凸形状に起因した膜成長異常や粒界欠陥が発生するため、膜の電気抵抗が増大する。また、上述した凹凸形状を有する表面透明電極8上に形成された発電層4の場合と同様に、ガラステクスチャ基板9の凹凸形状の凸頂部や凹底部に対応する表面透明電極3aの凸頂部や凹底部を起点に発電層4に欠陥が発生する。そして、これらの表面透明電極3aの電気抵抗の増大と発電層4に発生する欠陥とにより、発電特性が低下する。 In the surface transparent electrode 3a formed on the glass texture substrate 9 in this way, film growth abnormalities and grain boundary defects due to the uneven shape of the glass texture substrate 9 occur, so that the electrical resistance of the film increases. Further, similarly to the case of the power generation layer 4 formed on the surface transparent electrode 8 having the uneven shape described above, the convex top portion of the surface transparent electrode 3a corresponding to the convex top portion and the concave bottom portion of the concave and convex shape of the glass texture substrate 9 Defects are generated in the power generation layer 4 starting from the concave bottom. The power generation characteristics deteriorate due to an increase in electrical resistance of these surface transparent electrodes 3a and defects generated in the power generation layer 4.

 次に、内部光散乱構造2を有するガラス基板1の作製方法の一例について説明する。図5は、レーザー照射によりガラス基板1内に内部光散乱構造2を形成する方法の概念を模式的に示す断面図である。例えばレーザー光10としてYAG3倍波を使用し、レンズ11により焦点位置12で直径が3μmの円状になるまでレーザー光10を収束させる。この焦点位置12がガラス基板1の内部に位置するようにガラス基板1とレンズ11との位置関係を調整し、レーザー光10をパルス発振させるとともに、ガラス基板1を該ガラス基板1の面方向(図5中の矢印Aの方向)に走査させる。 Next, an example of a method for producing the glass substrate 1 having the internal light scattering structure 2 will be described. FIG. 5 is a cross-sectional view schematically showing a concept of a method for forming the internal light scattering structure 2 in the glass substrate 1 by laser irradiation. For example, YAG triple wave is used as the laser beam 10, and the laser beam 10 is converged by the lens 11 until it becomes a circle having a diameter of 3 μm at the focal position 12. The positional relationship between the glass substrate 1 and the lens 11 is adjusted so that the focal position 12 is located inside the glass substrate 1, the laser beam 10 is pulsated, and the glass substrate 1 is aligned with the surface direction of the glass substrate 1 ( Scan in the direction of arrow A in FIG.

 このようにしてガラス基板1に特定のパワーのレーザー光10を照射すると、レーザー光10による熱で焦点位置12のガラスに微細なクラックが局所的に発生する。このクラックがガラス基板1内に多数散在することにより、ガラス基板1に入射した光が散乱するようになり、簡略な工程で容易にガラス基板1の内部に散乱構造を形成することができる。このようなレーザー照射を開始する位置および終了する位置に関しては、ガラス基板1の端部より内側であり、かつ集積型薄膜太陽電池6を形成する領域より外側にする必要がある。 When the laser beam 10 having a specific power is irradiated onto the glass substrate 1 in this way, fine cracks are locally generated in the glass at the focal position 12 by the heat of the laser beam 10. When many cracks are scattered in the glass substrate 1, light incident on the glass substrate 1 is scattered, and a scattering structure can be easily formed in the glass substrate 1 by a simple process. Regarding the position where laser irradiation is started and the position where it is terminated, it is necessary to be inside the end of the glass substrate 1 and outside the region where the integrated thin film solar cell 6 is formed.

 レーザー照射を開始する位置および終了する位置、すなわちガラス基板1の面方向における内部光散乱構造2の形成位置をガラス基板1の端部より内側とすることで、内部光散乱構造2を形成した後においても十分なガラス基板1の強度を確保することができる。このようにガラス基板1の周辺領域には、内部光散乱構造2が形成されない幅1mm以上の領域を全周に設けること望ましく、幅2mm以上とするとさらによい。 After forming the internal light scattering structure 2 by setting the position where the laser irradiation starts and the position where the laser irradiation starts, that is, the position where the internal light scattering structure 2 is formed in the plane direction of the glass substrate 1 to the inside of the end of the glass substrate 1 In this case, sufficient strength of the glass substrate 1 can be secured. As described above, in the peripheral region of the glass substrate 1, it is desirable to provide a region having a width of 1 mm or more where the internal light scattering structure 2 is not formed on the entire circumference, and more preferably, the width is 2 mm or more.

 また、ガラス基板1の面方向における内部光散乱構造2の形成位置を集積型薄膜太陽電池6を形成する領域よりも外側にすることで、ガラス基板1に斜めに入射した太陽光も内部光散乱構造2で散乱させた後に集積型薄膜太陽電池6に入射させることができる。このように、ガラス基板1に入射した光を内部光散乱構造2で散乱させた後に集積型薄膜太陽電池6の全面に入射させることが望ましく、内部光散乱構造2はガラス基板1の面方向においてガラス基板1の周辺領域を除いてほぼ全面に均一に形成されることが望ましい。 Further, by making the formation position of the internal light scattering structure 2 in the surface direction of the glass substrate 1 outside the region where the integrated thin film solar cell 6 is formed, sunlight incident obliquely on the glass substrate 1 is also internally scattered. After being scattered by the structure 2, it can be incident on the integrated thin film solar cell 6. As described above, it is desirable that the light incident on the glass substrate 1 is scattered by the internal light scattering structure 2 and then incident on the entire surface of the integrated thin film solar cell 6, and the internal light scattering structure 2 is in the plane direction of the glass substrate 1. It is desirable that the glass substrate 1 be formed uniformly on the entire surface except for the peripheral region.

 後に述べる実施の形態2の様に、内部光散乱構造2を有するガラス基板1を結晶系太陽電池モジュールのフロントガラスとして用いる場合には、レーザー照射の開始位置と終了位置とをガラス基板1の端部より内側でかつ結晶系太陽電池セルを配置する領域より外側にする必要がある。なお、結晶系太陽電池モジュールの場合は、基板間の隙間が大きい箇所については、その前面となる部分に散乱構造を形成しなくてもよい。 When the glass substrate 1 having the internal light scattering structure 2 is used as the windshield of the crystalline solar cell module as in the second embodiment described later, the laser irradiation start position and end position are set to the end of the glass substrate 1. It is necessary to be inside the portion and outside the region where the crystalline solar cells are arranged. In the case of a crystalline solar cell module, the scattering structure does not have to be formed on the front surface of the portion where the gap between the substrates is large.

 図6は、ガラス基板1に内部光散乱構造2を形成するためのレーザー照射パターン13の一例を示す概念図である。図6では、レーザー照射パターン13をガラス基板1の上側より見た状態を示している。図6では、ガラス基板1は、図6中の矢印Aの方向に走査されている。レーザー光10は、ガラス基板1の内部の焦点位置で直径3μmの円状になるようにガラス基板1に対して照射される。そして、レーザー光10はパルス状に照射されているので、パルスの周波数とガラス基板1の走査速度とにより決定される縦ピッチPlで矢印Aの方向に直線状に照射される。 FIG. 6 is a conceptual diagram showing an example of a laser irradiation pattern 13 for forming the internal light scattering structure 2 on the glass substrate 1. FIG. 6 shows a state in which the laser irradiation pattern 13 is viewed from the upper side of the glass substrate 1. In FIG. 6, the glass substrate 1 is scanned in the direction of arrow A in FIG. The laser beam 10 is applied to the glass substrate 1 so as to form a circle having a diameter of 3 μm at the focal position inside the glass substrate 1. Since the laser beam 10 is irradiated in a pulse shape, the laser beam 10 is irradiated linearly in the direction of arrow A at a vertical pitch Pl determined by the frequency of the pulse and the scanning speed of the glass substrate 1.

 次に、ガラス基板1の位置をガラス基板1の面方向においてガラス基板1の走査方向と直角の方向にPwの距離(横ピッチPw)だけ移動させ、再度レーザーを照査することを繰り返す。これにより、図6に示されるようにレーザー光をガラス基板1に対して二次元的に照射することができ、ガラス基板1の面内に二次元的に広がる内部光散乱構造2を形成することができる。 Next, the position of the glass substrate 1 is moved in the plane direction of the glass substrate 1 by a distance Pw (lateral pitch Pw) in a direction perpendicular to the scanning direction of the glass substrate 1, and the laser is again checked. Thereby, as shown in FIG. 6, the laser light can be irradiated two-dimensionally onto the glass substrate 1, and the internal light scattering structure 2 that extends two-dimensionally in the plane of the glass substrate 1 is formed. Can do.

 また、図7は、ガラス基板1の内部に三次元的な内部光散乱構造のパターンを形成する方法の概念を模式的に示す断面図である。図7に示す方法では、図5に示した方法と同様にレンズ11により収束されたレーザー光10により、ガラス基板1の厚み方向における第1の焦点位置16に第1の内部光散乱構造14を形成する。その後、ガラス基板1の位置をガラス基板1の厚み方向(図7中の下方向)に変位させることでレーザー光10の焦点位置をガラス基板1の内部で移動させる。 FIG. 7 is a cross-sectional view schematically showing the concept of a method of forming a three-dimensional internal light scattering structure pattern inside the glass substrate 1. In the method shown in FIG. 7, the first internal light scattering structure 14 is formed at the first focal position 16 in the thickness direction of the glass substrate 1 by the laser light 10 converged by the lens 11 as in the method shown in FIG. 5. Form. Thereafter, the focal position of the laser beam 10 is moved inside the glass substrate 1 by displacing the position of the glass substrate 1 in the thickness direction of the glass substrate 1 (downward in FIG. 7).

 そして、第2の焦点位置17に再度レーザー光10を照射してガラス基板1を図7中の矢印Aの方向に走査することで、第2の内部光散乱構造15をガラス基板1の厚み方向における第1の内部光散乱構造14の上部位置に形成することが可能である。この様にガラス基板1の内部において複数の焦点位置に内部光散乱構造を形成することにより、三次元的な内部光散乱構造を形成することができる。 Then, the second focal position 17 is irradiated with the laser beam 10 again, and the glass substrate 1 is scanned in the direction of arrow A in FIG. Can be formed at the upper position of the first internal light scattering structure 14. In this manner, by forming the internal light scattering structure at a plurality of focal positions within the glass substrate 1, a three-dimensional internal light scattering structure can be formed.

 次に、以上のようにレーザー光10を用いて内部光散乱構造2を形成したガラス基板1の散乱特性について説明する。図8は、ガラス基板1に照射するレーザー光10のパワーを変化させた場合における、ガラス基板1の散乱特性を示すヘイズ率(%)の入射光の波長に対する依存性を示す特性図である。図8においては、ガラス基板1に照射するレーザー光10のパワーを0.45W、0.6W、0.7Wと変化させた場合について示している。内部光散乱構造2の形成におけるガラス基板1の面方向におけるレーザー照射パターンは、縦ピッチPlが26.7μm、横ピッチPwが20μmであり、焦点位置を1箇所に固定した二次元パターンである。 Next, the scattering characteristics of the glass substrate 1 on which the internal light scattering structure 2 is formed using the laser light 10 as described above will be described. FIG. 8 is a characteristic diagram showing the dependence of the haze ratio (%) indicating the scattering characteristics of the glass substrate 1 on the wavelength of the incident light when the power of the laser light 10 applied to the glass substrate 1 is changed. In FIG. 8, it shows about the case where the power of the laser beam 10 irradiated to the glass substrate 1 is changed to 0.45 W, 0.6 W, and 0.7 W. The laser irradiation pattern in the surface direction of the glass substrate 1 in the formation of the internal light scattering structure 2 is a two-dimensional pattern in which the vertical pitch Pl is 26.7 μm, the horizontal pitch Pw is 20 μm, and the focal position is fixed at one place.

 図8に示されるように、レーザー光10のパワーがいずれのパワーの場合においても、ガラス基板1に入射する光の波長の増大に伴ってヘイズ率が低下する、つまり、長波長の光ほど散乱されにくいことが分かる。また、図8より、強いパワーのレーザー光10を照射することで、内部光散乱構造2を形成したガラス基板1を高ヘイズ化できることが分かる。 As shown in FIG. 8, regardless of the power of the laser beam 10, the haze ratio decreases as the wavelength of light incident on the glass substrate 1 increases. It is understood that it is hard to be done. In addition, it can be seen from FIG. 8 that the glass substrate 1 on which the internal light scattering structure 2 is formed can be increased in haze by irradiating the laser beam 10 with high power.

 図9は、レーザー照射パターン13の縦ピッチPlを変化させた場合における、ガラス基板1のヘイズ率の入射光の波長に対する依存性を示す特性図である。ここでは、ガラス基板1の走査速度を変化させて、レーザー照射パターン13の縦ピッチPlを13.3μm、20μm、26.7μmと変化させた結果を示している。また、この場合のレーザー照射パターン13は、横ピッチPwは20μm、焦点位置は1箇所に固定した二次元パターンであり、レーザー光10のパワーは、0.45Wである。図9より、レーザー照射パターン13の縦ピッチPlを変化させることにより、異なる散乱特性を有する内部光散乱構造を有するガラス基板1を得ることができることが分かる。 FIG. 9 is a characteristic diagram showing the dependence of the haze ratio of the glass substrate 1 on the wavelength of incident light when the vertical pitch Pl of the laser irradiation pattern 13 is changed. Here, the scanning speed of the glass substrate 1 is changed and the vertical pitch Pl of the laser irradiation pattern 13 is changed to 13.3 μm, 20 μm, and 26.7 μm. In this case, the laser irradiation pattern 13 is a two-dimensional pattern in which the horizontal pitch Pw is 20 μm, the focal position is fixed at one place, and the power of the laser beam 10 is 0.45 W. From FIG. 9, it can be seen that the glass substrate 1 having an internal light scattering structure having different scattering characteristics can be obtained by changing the vertical pitch Pl of the laser irradiation pattern 13.

 ここで、レーザー光10を照射するピッチに関しては、ガラス基板1の強度の低下を抑制するために、照射するレーザー光10の焦点位置でのビーム径の4倍から10倍が好ましく、より好ましくは5倍から8倍である。 Here, regarding the pitch at which the laser beam 10 is irradiated, in order to suppress a decrease in the strength of the glass substrate 1, it is preferably 4 to 10 times the beam diameter at the focal position of the laser beam 10 to be irradiated, more preferably. 5 to 8 times.

 隣接するクラックが形成された領域間にはクラックが形成された領域のサイズの少なくとも1/3以上のクラックの存在しない間隔があることが好ましく、2/3以上あると更に好ましい。このような条件を満たすことにより、隣り合うクラックがつながらないようにすることができる。また、ガラス基板1の面内において、クラックが形成された領域の面積が内部光散乱構造2を形成した領域の面積の1/10倍以上あることが、ガラス基板1の高ヘイズ率化を図って太陽電池の性能を向上させる光散乱性能の点で好ましく、1/8倍以上であるとより好ましい。例えば3ミクロンのビームで直径9ミクロンのクラック(面積63平方ミクロン)が、縦3×10倍の30ミクロン、横20ミクロンの領域(面積600平方ミクロン)にできるとすると、クラックの面積はおおよそ領域の1/10でありクラックの面積は1/10以上になる。また、ガラス基板1の面内において、クラックが形成された領域の面積が内部光散乱構造2を形成した領域の面積の8/10倍以下、更に望ましくは、7/10倍以下であることが、ガラスの強度の維持の点で好ましい。また、高いヘイズ率を実現するためにはガラス基板1の面内において、クラックが形成された領域の面積は内部光散乱構造2を形成した領域の面積の4/10倍以上であることが望ましい。 It is preferable that there is an interval in which cracks do not exist at least 1/3 or more of the size of the area where cracks are formed between the areas where adjacent cracks are formed, and more preferably 2/3 or more. By satisfying such conditions, adjacent cracks can be prevented from being connected. Further, in the plane of the glass substrate 1, the area of the region where the crack is formed is 1/10 or more times the area of the region where the internal light scattering structure 2 is formed, thereby increasing the haze ratio of the glass substrate 1. In view of light scattering performance for improving the performance of the solar cell, it is more preferably 1/8 or more. For example, if a crack of 9 microns in diameter with a 3 micron beam (area 63 square microns) can be made 3 × 10 times 30 microns wide and 20 microns wide (600 square microns in area), the crack area is roughly the region. The crack area is 1/10 or more. Further, in the surface of the glass substrate 1, the area of the cracked region is 8/10 times or less, more preferably 7/10 times or less the area of the region where the internal light scattering structure 2 is formed. From the viewpoint of maintaining the strength of the glass. In order to realize a high haze ratio, the area of the cracked region in the plane of the glass substrate 1 is preferably 4/10 times or more the area of the region where the internal light scattering structure 2 is formed. .

 図10は、レーザー照射パターンの横ピッチPwを変化させた場合における、ガラス基板1のヘイズ率の入射光の波長に対する依存性を示す特性図である。ここでは、レーザー照射パターン13の横ピッチPwを10μm、20μmと変化させた場合のヘイズ率の波長依存性を示している。レーザー光10の照射条件は、縦ピッチが26.7μmの二次元パターンであり、レーザー光10のパワーは0.6Wである。図10に示されるように、横ピッチPwを変化させることによっても、内部光散乱構造の散乱特性を変化させることが可能である。 FIG. 10 is a characteristic diagram showing the dependence of the haze ratio of the glass substrate 1 on the wavelength of incident light when the lateral pitch Pw of the laser irradiation pattern is changed. Here, the wavelength dependence of the haze ratio when the lateral pitch Pw of the laser irradiation pattern 13 is changed to 10 μm and 20 μm is shown. The irradiation condition of the laser beam 10 is a two-dimensional pattern with a vertical pitch of 26.7 μm, and the power of the laser beam 10 is 0.6 W. As shown in FIG. 10, the scattering characteristics of the internal light scattering structure can be changed also by changing the lateral pitch Pw.

 図11は、内部光散乱構造2の三次元的な構造の相違による、ガラス基板1のヘイズ率の入射光の波長に対する依存性を示す特性図である。ここでは、ガラス基板1に照射するレーザー光の焦点位置をガラス基板1の内部で変化させることにより、三次元的な内部光散乱構造2を形成した際のヘイズ率の波長依存性を示している。 FIG. 11 is a characteristic diagram showing the dependence of the haze ratio of the glass substrate 1 on the wavelength of incident light due to the difference in the three-dimensional structure of the internal light scattering structure 2. Here, the wavelength dependence of the haze ratio when the three-dimensional internal light scattering structure 2 is formed by changing the focal position of the laser light irradiated to the glass substrate 1 inside the glass substrate 1 is shown. .

 レーザー光10のパワーは0.6Wである。レーザー光10の照射条件は、縦ピッチPlが26.7μm、横ピッチPwが20μmである。そして、この条件で1段構造の二次元内部光散乱構造のみを形成した場合、焦点位置をガラス基板1内で厚み方向に0.8mmずらして2段構造の内部光散乱構造2を形成した三次元パターンの場合、更に焦点位置を厚み方向に0.8mmずらして3段構造の内部光散乱構造2を形成した三次元パターンの場合の結果を示している。図11に示されるように、内部光散乱構造2を三次元的に形成することによっても内部光散乱構造2の散乱特性を変化させることが可能である。 The power of the laser beam 10 is 0.6W. The irradiation conditions of the laser beam 10 are a vertical pitch Pl of 26.7 μm and a horizontal pitch Pw of 20 μm. Then, when only a one-stage two-dimensional internal light scattering structure is formed under these conditions, the third order in which the focal position is shifted by 0.8 mm in the thickness direction in the glass substrate 1 to form the two-stage internal light scattering structure 2. In the case of the original pattern, the result in the case of a three-dimensional pattern in which the focal position is further shifted by 0.8 mm in the thickness direction to form a three-stage internal light scattering structure 2 is shown. As shown in FIG. 11, the scattering characteristics of the internal light scattering structure 2 can be changed also by forming the internal light scattering structure 2 three-dimensionally.

 図12は、内部光散乱構造2を有するガラス基板1上に形成した薄膜太陽電池と、凹凸を有する表面透明電極3上に形成した薄膜太陽電池と、の開放電圧のヘイズ率依存性を示す特性図である。ここでは、上述したようにレーザー光10を用いて平坦なガラス基板1の内部に内部光散乱構造2を形成して該ガラス基板1の平坦面上に薄膜太陽電池を形成した場合と、表面透明電極を凹凸形状にすることで光散乱構造を形成して該表面透明電極3の凹凸上に薄膜太陽電池を形成した場合と、について、薄膜太陽電池の発電特性を示す開放電圧の散乱特性(波長800nmの光に対するヘイズ率)を示している。表面透明電極3の凹凸に関しては、凹凸を形成するためのエッチング時間を変化させて異なるヘイズ率を有する表面透明電極3を形成し、その上に薄膜太陽電池を形成した。内部光散乱構造2を有するガラス基板に関しては、図8~図11に示したようなレーザーの照射条件や散乱構造の段数を変化させることで異なるヘイズ率を有する基板を形成し、その上に薄膜太陽電池を形成した。なお、図12における縦軸の規格化開放電圧に関しては、内部光散乱構造2を有しない平坦なガラス基板1上に薄膜太陽電池を形成した場合の開放電圧で規格化している。 FIG. 12 shows the haze ratio dependence of the open-circuit voltage between the thin film solar cell formed on the glass substrate 1 having the internal light scattering structure 2 and the thin film solar cell formed on the surface transparent electrode 3 having irregularities. FIG. Here, as described above, the laser light 10 is used to form the internal light scattering structure 2 in the flat glass substrate 1 and a thin film solar cell is formed on the flat surface of the glass substrate 1, and the surface is transparent. In the case where a light scattering structure is formed by making the electrode uneven, and a thin film solar cell is formed on the unevenness of the surface transparent electrode 3, the scattering characteristics (wavelength) of the open voltage indicating the power generation characteristics of the thin film solar cell The haze ratio for 800 nm light) is shown. Regarding the unevenness of the surface transparent electrode 3, the surface transparent electrode 3 having a different haze ratio was formed by changing the etching time for forming the unevenness, and a thin film solar cell was formed thereon. For the glass substrate having the internal light scattering structure 2, substrates having different haze ratios are formed by changing the laser irradiation conditions and the number of steps of the scattering structure as shown in FIGS. A solar cell was formed. Note that the normalized open circuit voltage on the vertical axis in FIG. 12 is standardized by the open circuit voltage when a thin film solar cell is formed on a flat glass substrate 1 that does not have the internal light scattering structure 2.

 図12より、両方の薄膜太陽電池は、ともに波長800nmの光に対するヘイズ率が増大するにしたがって開放電圧は低下する傾向にあるが、ガラス基板1の内部に内部光散乱構造2を形成したガラス基板上の薄膜太陽電池の開放電圧の方が、低下の傾向が緩やかになっており散乱特性の増大に伴う特性劣化が少ないことが分かる。 From FIG. 12, both thin-film solar cells tend to decrease the open circuit voltage as the haze ratio for light with a wavelength of 800 nm increases, but the glass substrate in which the internal light scattering structure 2 is formed inside the glass substrate 1. It can be seen that the open-circuit voltage of the upper thin-film solar cell has a gentler decreasing tendency and less deterioration in characteristics due to an increase in scattering characteristics.

 図13は、レーザー照射により実施の形態1にかかる内部光散乱構造2を形成したガラス基板における光透過率の波長依存性の一例を示す特性図である。内部光散乱構造2を有するガラス基板は、図8~図11に示したようなレーザーの照射条件や散乱構造の段数を変化させることで異なるヘイズ率を有する基板を形成した。図13では、内部光散乱構造2を形成していないガラス基板における光透過率を基準(100%)にしている。図13に示されるように、内部光散乱構造2を形成した後においても、ガラス基板の光透過率が350nmから1500nmの波長領域において85%から91%と高い光透過率を保っていることが分かる。 FIG. 13 is a characteristic diagram showing an example of wavelength dependency of light transmittance in a glass substrate on which the internal light scattering structure 2 according to the first embodiment is formed by laser irradiation. As the glass substrate having the internal light scattering structure 2, substrates having different haze ratios were formed by changing the laser irradiation conditions and the number of steps of the scattering structure as shown in FIGS. In FIG. 13, the light transmittance in the glass substrate in which the internal light scattering structure 2 is not formed is set as a reference (100%). As shown in FIG. 13, even after the internal light scattering structure 2 is formed, the light transmittance of the glass substrate is maintained at a high light transmittance of 85% to 91% in the wavelength region of 350 nm to 1500 nm. I understand.

 また、上述した方法でレーザー光によりガラス基板1内に内部光散乱構造2を形成する場合は、レーザー光を周期的に所定のパターンで照射するため、形成される内部光散乱構造2内のクラックは所定の幾何学的配置パターンを有する。その結果、この内部光散乱構造2の部分で、この所定の幾何学的配置パターンを反映した特定の波長の光を反射しやすくなる。この性質を利用することで、従来変化させることが困難であったガラス面から薄膜太陽電池を見た際の色合いに変化を持たせて、薄膜太陽電池の色味を変化させることが可能である。 Further, when the internal light scattering structure 2 is formed in the glass substrate 1 by laser light by the above-described method, the laser light is periodically irradiated in a predetermined pattern, so that the cracks in the internal light scattering structure 2 to be formed are formed. Has a predetermined geometric pattern. As a result, the portion of the internal light scattering structure 2 can easily reflect light having a specific wavelength that reflects the predetermined geometric arrangement pattern. By utilizing this property, it is possible to change the color of the thin-film solar cell by changing the hue when the thin-film solar cell is viewed from the glass surface, which has been difficult to change in the past. .

 図14は、内部光散乱構造2を形成する際のレーザー照射条件による薄膜太陽電池の反射スペクトルの相違を示す特性図である。ここでは、特定の条件で内部光散乱構造2を形成したガラス基板1上に作製した薄膜太陽電池の反射スペクトルを示している。 FIG. 14 is a characteristic diagram showing the difference in the reflection spectrum of the thin-film solar cell depending on the laser irradiation conditions when the internal light scattering structure 2 is formed. Here, the reflection spectrum of the thin film solar cell produced on the glass substrate 1 which formed the internal light-scattering structure 2 on specific conditions is shown.

 図14において、条件1は照射パワーが0.7W、縦ピッチPlが13μm、横ピッチPwが10μmのレーザー光の照射条件で二次元パターンの内部光散乱構造2を形成した場合、条件2は照射パワーが0.7W、縦ピッチPlが27μm、横ピッチPwが20μmのレーザー光の照射条件で二次元パターンの内部光散乱構造2を形成した場合、条件3は内部光散乱構造2を形成しない場合である。 In FIG. 14, the condition 1 is that the irradiation light is 0.7 W, the vertical pitch Pl is 13 μm, and the horizontal pitch Pw is 10 μm. When the internal light scattering structure 2 having a two-dimensional pattern is formed under laser light irradiation conditions with a power of 0.7 W, a vertical pitch Pl of 27 μm, and a horizontal pitch Pw of 20 μm, the condition 3 is a case where the internal light scattering structure 2 is not formed. It is.

 条件1~条件3の3条件とも、薄膜太陽電池自体は平坦なガラス基板1上に形成されているが、ガラス基板1の内部に形成される内部光散乱構造2によって反射光がピークを持つ波長領域が異なっている。具体的には、内部光散乱構造2を持たない平坦なガラス基板上1に薄膜太陽電池を作製した場合の条件3では、ガラス面から見た反射光(反射スペクトル)は赤色の領域にピークを持っており、ガラス面から見た薄膜太陽電池は赤味がかった色合いを示す。これに対して、条件2の場合には、ガラス面から見た反射光(反射スペクトル)は緑色の部分にピークが出てきているため、ガラス面から見た薄膜太陽電池は緑がかった色合いを示す。また、条件1の場合には、他の条件と比較して青色部分の反射光(反射スペクトル)が強くなっているため、ガラス面から見た薄膜太陽電池は青味がかった色合いを示す。このように、レーザー光を照射する周期パターンを変化させて、内部光散乱構造2内のクラックの幾何学的配置のパターンを変化させることにより薄膜太陽電池の色合いを変化させることができる。 In all three conditions 1 to 3, the thin film solar cell itself is formed on the flat glass substrate 1, but the wavelength at which the reflected light has a peak due to the internal light scattering structure 2 formed inside the glass substrate 1. The area is different. Specifically, in condition 3 when a thin film solar cell is fabricated on a flat glass substrate 1 having no internal light scattering structure 2, the reflected light (reflection spectrum) seen from the glass surface has a peak in the red region. The thin film solar cell seen from the glass surface shows a reddish hue. On the other hand, in the case of Condition 2, since the reflected light (reflection spectrum) seen from the glass surface has a peak in the green part, the thin film solar cell seen from the glass surface has a greenish hue. Show. In the case of Condition 1, since the reflected light (reflection spectrum) in the blue portion is stronger than in other conditions, the thin film solar cell viewed from the glass surface shows a bluish hue. In this way, the hue of the thin-film solar cell can be changed by changing the pattern of the geometric arrangement of the cracks in the internal light scattering structure 2 by changing the periodic pattern of the laser light irradiation.

 上述したように、実施の形態1では、集積型薄膜太陽電池6を形成する平坦なガラス基板1の内部に光を散乱させる内部光散乱構造2を持たせ、この平坦なガラス基板1上に透明導電性膜からなる表面透明電極3、発電層4、裏面電極5を形成することで、透明導電性膜の凹凸に起因する発電層4の欠陥が抑制され発電特性が改善する。また、平坦なガラス基板1上に透明導電性膜が形成されるので、透明導電性膜の欠陥に起因した発電特性の低下が抑制される。 As described above, in the first embodiment, the flat glass substrate 1 on which the integrated thin film solar cell 6 is formed has the internal light scattering structure 2 that scatters light, and the flat glass substrate 1 is transparent. By forming the surface transparent electrode 3, the power generation layer 4, and the back electrode 5 made of a conductive film, defects in the power generation layer 4 due to the unevenness of the transparent conductive film are suppressed and power generation characteristics are improved. Moreover, since a transparent conductive film is formed on the flat glass substrate 1, the fall of the electric power generation characteristic resulting from the defect of a transparent conductive film is suppressed.

 また、ガラス基板1の内部の内部光散乱構造2に特定の波長の光を反射する機能を持たせることで、ガラス面から集積型薄膜太陽電池6を見た際の色合いに変化を持たせることができる。 Further, by giving the internal light scattering structure 2 inside the glass substrate 1 a function of reflecting light of a specific wavelength, the hue when the integrated thin film solar cell 6 is viewed from the glass surface is changed. Can do.

実施の形態2.
 図15は、本発明の実施の形態2にかかる結晶系太陽電池モジュールの概略構成を示す断面図である。実施の形態2にかかる結晶系太陽電池モジュールにおいては、内部光散乱構造2が内部に形成されたフロントガラス18上に、例えば多結晶シリコンや単結晶シリコン等の半導体結晶基板を用いた結晶系太陽電池セル19が配置されている。
Embodiment 2. FIG.
FIG. 15: is sectional drawing which shows schematic structure of the crystalline solar cell module concerning Embodiment 2 of this invention. In the crystalline solar cell module according to the second embodiment, a crystalline solar cell using, for example, a semiconductor crystal substrate such as polycrystalline silicon or single crystal silicon on the windshield 18 in which the internal light scattering structure 2 is formed. Battery cell 19 is arranged.

 内部光散乱構造2が内部に形成されたフロントガラス18は、光入射側の保護部材である。結晶系太陽電池セル19は、例えばPN接合を有するシリコン基板の両面に電極(表面電極、裏面電極)が形成されて構成される。個々の結晶系太陽電池セル19同士は、電極に接続した導電性の接続配線20により電気的に直列接続されている。また、結晶系太陽電池セル19に発生する電流・電圧を取り出すための取り出し配線23が、両端の接続配線20に接続されている。 The windshield 18 in which the internal light scattering structure 2 is formed is a protective member on the light incident side. The crystalline solar battery cell 19 is configured by forming electrodes (surface electrode, back electrode) on both surfaces of a silicon substrate having a PN junction, for example. The individual crystalline solar cells 19 are electrically connected in series by conductive connection wirings 20 connected to electrodes. In addition, extraction wirings 23 for extracting currents and voltages generated in the crystalline solar cells 19 are connected to the connection wirings 20 at both ends.

 これらの結晶系太陽電池セル19等をフロントガラス18上に配置し、このフロントガラス18と耐候性を有するバックフィルム25とをEVAフィルム等の充填材24で接合することにより、実施の形態2にかかる結晶系太陽電池モジュールが形成される。 These crystalline solar cells 19 and the like are arranged on the windshield 18, and the windshield 18 and the weather-resistant back film 25 are joined together with a filler 24 such as an EVA film, thereby obtaining the second embodiment. Such a crystalline solar cell module is formed.

 図16は、凹凸表面形状を有する従来の結晶系太陽電池の概略構成を示す断面図である。従来の結晶系太陽電池モジュールにおいては、発電特性を改善するために結晶系太陽電池セル19の光入射側の表面にエッチングやブラスト処理により微細な凹凸構造を形成している。このため、結晶系太陽電池セルの形成プロセスが複雑になっていた。 FIG. 16 is a cross-sectional view showing a schematic configuration of a conventional crystalline solar cell having an uneven surface shape. In a conventional crystalline solar cell module, a fine concavo-convex structure is formed on the surface on the light incident side of the crystalline solar cell 19 by etching or blasting in order to improve power generation characteristics. For this reason, the formation process of the crystalline solar cell has been complicated.

 図17は、内部光散乱構造2を有するフロントガラス18を用いた実施の形態2にかかる結晶系太陽電池モジュールの概略構成を示す断面図であり、図15の一部を拡大して示す要部拡大図である。実施の形態2にかかる結晶系太陽電池モジュールにおいては、フロントガラス18の内部に光を散乱させる内部光散乱構造2を形成しているため、結晶系太陽電池セル19の光入射側の表面に特に光散乱構造を形成する必要がなく、結晶系太陽電池セルの作製プロセスの簡略化が図れる。 FIG. 17 is a cross-sectional view showing a schematic configuration of the crystalline solar cell module according to the second embodiment using the windshield 18 having the internal light scattering structure 2, and is an enlarged view of a part of FIG. It is an enlarged view. In the crystalline solar cell module according to the second embodiment, since the internal light scattering structure 2 that scatters light is formed inside the windshield 18, the surface of the crystalline solar cell 19 on the light incident side is particularly large. There is no need to form a light scattering structure, and the manufacturing process of the crystalline solar cell can be simplified.

 この結晶系太陽電池モジュールのフロントガラス18内の内部光散乱構造2は、実施の形態1に示した方法と同じ方法で作製することができ、内部光散乱構造2を形成する条件により散乱特性を制御することが可能である。また、実施の形態1に示したように内部光散乱構造2を構成するクラックの幾何学的配置パターンを変化させることにより、ガラス面から見た反射光のスペクトルを変化させることが可能であるため、結晶系太陽電池モジュールにおいても、モジュールの色合いを変化させることが可能である。 The internal light scattering structure 2 in the windshield 18 of this crystalline solar cell module can be produced by the same method as shown in the first embodiment, and the scattering characteristics are varied depending on the conditions for forming the internal light scattering structure 2. It is possible to control. Further, as shown in Embodiment 1, it is possible to change the spectrum of reflected light viewed from the glass surface by changing the geometric arrangement pattern of the cracks constituting the internal light scattering structure 2. Even in a crystalline solar cell module, the color of the module can be changed.

 上述したように、実施の形態2では、結晶系太陽電池モジュールの表面側のフロントガラス18の内部に光を散乱させる内部光散乱構造2を設けることで、散乱された光を結晶系太陽電池セル19に入射させることができる。これにより、結晶系太陽電池セルの表面に凹凸形状を形成する必要がなく、結晶系太陽電池セルの作製工程の簡略化と低コスト化が実現できる。 As described above, in the second embodiment, by providing the internal light scattering structure 2 that scatters light inside the windshield 18 on the surface side of the crystalline solar cell module, the scattered solar light is transmitted to the crystalline solar cell. 19 can be made incident. Thereby, it is not necessary to form uneven | corrugated shape on the surface of a crystalline solar cell, and simplification of the manufacturing process of a crystalline solar cell and cost reduction are realizable.

 また、フロントガラス18の内部の内部光散乱構造2に特定の波長の光を反射する機能を持たせることで、ガラス面から結晶系太陽電池セル19を見た際の色合いに変化を持たせることができる。 Further, by giving the internal light scattering structure 2 inside the windshield 18 a function of reflecting light of a specific wavelength, the hue when the crystalline solar cell 19 is viewed from the glass surface is changed. Can do.

 さらに、前記内部光散乱構造2を形成するガラス基板が、強化ガラス等の応力層を含む場合においては、内部散乱を生じさせるクラック層を応力層内部に形成すると、このクラックが原因となりガラスが破壊する恐れがある。したがって、このようなガラス基板にクラックを形成するために照射される集光したレーザー光の焦点は、該ガラス基板の応力層以外の位置にする必要がある。 Further, in the case where the glass substrate forming the internal light scattering structure 2 includes a stress layer such as tempered glass, if a crack layer that causes internal scattering is formed inside the stress layer, the glass breaks due to this crack. There is a fear. Therefore, the focal point of the condensed laser beam irradiated to form a crack in such a glass substrate needs to be at a position other than the stress layer of the glass substrate.

 以上のように、本発明にかかる太陽電池は、光を散乱させる構造に起因した発電特性の低下が防止され、ガラス面から見た際の色合いを制御可能であり、簡略な工程で安価に製造可能な太陽電池の実現に有用である。 As described above, the solar cell according to the present invention can prevent deterioration in power generation characteristics due to the structure that scatters light, can control the hue when viewed from the glass surface, and is manufactured at a low cost by a simple process. It is useful for realizing possible solar cells.

 1 ガラス基板
 2 内部光散乱構造
 3 表面透明電極
 3a 表面透明電極
 4 発電層
 5 裏面電極
 6 集積型薄膜太陽電池
 7 薄膜太陽電池セル
 8 表面透明電極
 9 ガラステクスチャ基板
 10 レーザー光
 11 レンズ
 12 焦点位置
 14 第1の内部光散乱構造
 15 第2の内部光散乱構造
 16 第1の焦点位置
 17 第2の焦点位置
 18 フロントガラス
 19 結晶系太陽電池セル
 20 接続配線
 21 封止材
 22 バックガラス
 23 取り出し配線
 24 充填材
 25 バックフィルム
DESCRIPTION OF SYMBOLS 1 Glass substrate 2 Internal light-scattering structure 3 Surface transparent electrode 3a Surface transparent electrode 4 Power generation layer 5 Back electrode 6 Integrated thin film solar cell 7 Thin film solar cell 8 Surface transparent electrode 9 Glass texture substrate 10 Laser light 11 Lens 12 Focus position 14 First internal light scattering structure 15 Second internal light scattering structure 16 First focal position 17 Second focal position 18 Windshield 19 Crystalline solar cell 20 Connection wiring 21 Sealing material 22 Back glass 23 Extraction wiring 24 Filler 25 Back film

Claims (14)

 光電変換を行う発電層の光入射側にガラス基板を備える太陽電池であって、
 前記ガラス基板は、レーザー光を集光照射することにより形成されて前記ガラス基板に入射した光を散乱する光散乱構造を内部に有し、前記光散乱構造で散乱した光を前記発電層側に透過させること、
 を特徴とする太陽電池。
A solar cell including a glass substrate on a light incident side of a power generation layer that performs photoelectric conversion,
The glass substrate includes a light scattering structure formed by condensing and irradiating laser light to scatter light incident on the glass substrate, and the light scattered by the light scattering structure is directed to the power generation layer side. Transparent,
A solar cell characterized by.
 前記光散乱構造を有するガラス基板の波長350nmから1500nmの光に対する透過率が85%以上91%以下であり、
 前記光散乱構造で散乱した光の前記発電層における光路長が、前記発電層の膜厚より長いこと、
 を特徴とする請求項1に記載の太陽電池。
The transmittance for light having a wavelength of 350 nm to 1500 nm of the glass substrate having the light scattering structure is 85% or more and 91% or less,
The optical path length in the power generation layer of the light scattered by the light scattering structure is longer than the film thickness of the power generation layer;
The solar cell according to claim 1.
 前記光散乱構造は、レーザー照射により前記ガラス基板の内部に生じたクラックが前記ガラス基板の面方向において多数散在して構成されること、
 を特徴とする請求項1または2に記載の太陽電池。
The light scattering structure is configured such that many cracks generated in the glass substrate by laser irradiation are scattered in the surface direction of the glass substrate,
The solar cell according to claim 1, wherein:
 前記光散乱構造は、前記ガラス基板の面方向において前記ガラス基板の周辺部を除いて全面に形成されていること、
 を特徴とする請求項1~3のいずれか1つに記載の太陽電池。
The light scattering structure is formed on the entire surface of the glass substrate except for the peripheral portion of the glass substrate in the plane direction;
The solar cell according to any one of claims 1 to 3, wherein:
 前記ガラス基板の面方向において、前記クラックが形成された面積は前記光散乱構造が形成された面積の1/10以上、8/10以下であること、
 を特徴とする請求項1~4のいずれか1つに記載の太陽電池。
In the surface direction of the glass substrate, the area where the crack is formed is 1/10 or more and 8/10 or less of the area where the light scattering structure is formed,
The solar cell according to any one of claims 1 to 4, wherein:
 前記光散乱構造は、レーザー光を集光照射することにより発生するクラックからなる層が、前記ガラス基板内に少なくとも1層以上形成されていること、
 を特徴とする、請求項1~5のいずれか1つに記載の太陽電池。
The light scattering structure has at least one layer formed of cracks generated by condensing and irradiating laser light in the glass substrate,
The solar cell according to any one of claims 1 to 5, wherein:
 前記発電層として、前記ガラス基板の平坦な表面上に形成された薄膜光電変換層を含むこと、
 を特徴とする請求項1~6のいずれか1つに記載の太陽電池。
As the power generation layer, including a thin film photoelectric conversion layer formed on a flat surface of the glass substrate,
The solar cell according to any one of claims 1 to 6, wherein:
 前記発電層として、半導体結晶基板からなる光電変換層を含むこと、
 を特徴とする請求項1~6のいずれか1つに記載の太陽電池。
Including a photoelectric conversion layer made of a semiconductor crystal substrate as the power generation layer,
The solar cell according to any one of claims 1 to 6, wherein:
 ガラス基板にレーザー光を集光照射して前記ガラス基板の内部にクラックを多数散在させることにより、前記ガラス基板に入射した光を散乱する光散乱構造を前記ガラス基板の内部に形成する工程と、
 前記ガラス基板上に、第1電極と光電変換を行う発電層と第2電極とをこの順で配置する工程と、
 を含むことを特徴とする太陽電池の製造方法。
A step of forming a light scattering structure that scatters light incident on the glass substrate by condensing and irradiating a laser beam on the glass substrate to disperse a large number of cracks inside the glass substrate; and
Arranging the first electrode, the power generation layer for performing photoelectric conversion, and the second electrode in this order on the glass substrate;
The manufacturing method of the solar cell characterized by including.
 前記レーザー光の照射は、前記レーザー光の焦点位置におけるビーム径に対して4倍~10倍の長さの照射ピッチで周期的に行われること、
 を特徴とする請求項9に記載の太陽電池の製造方法。
The laser light irradiation is periodically performed at an irradiation pitch of 4 to 10 times the beam diameter at the focal position of the laser light.
The method for producing a solar cell according to claim 9.
 前記光散乱構造を、前記ガラス基板の面方向において前記ガラス基板の周辺部を除いて全面に形成すること、
 を特徴とする請求項9または10に記載の太陽電池の製造方法。
Forming the light scattering structure on the entire surface except the peripheral portion of the glass substrate in the surface direction of the glass substrate;
The method for producing a solar cell according to claim 9 or 10, wherein:
 前記ガラス基板の面方向において、前記クラックが形成された面積は前記光散乱構造が形成された面積の1/10以上、8/10以下であること、
 を特徴とする請求項9~11のいずれか1つに記載の太陽電池の製造方法。
In the surface direction of the glass substrate, the area where the crack is formed is 1/10 or more and 8/10 or less of the area where the light scattering structure is formed,
The method for producing a solar cell according to any one of claims 9 to 11, wherein:
 前記ガラス基板に照射される集光したレーザー光の前記ガラス基板内での焦点位置を前記ガラス基板の厚さ方向において変化させることにより、前記クラックからなる層が前記ガラス基板の厚さ方向において複数形成された前記光散乱構造が形成されること、
 を特徴とする請求項9~12のいずれか1つに記載の太陽電池の製造方法。
By changing the focal position in the glass substrate of the focused laser beam irradiated to the glass substrate in the thickness direction of the glass substrate, a plurality of layers composed of the cracks are formed in the thickness direction of the glass substrate. The formed light scattering structure is formed;
The method for producing a solar cell according to any one of claims 9 to 12, wherein:
 前記光散乱構造を形成するガラス基板が応力層を含む場合において、前記ガラス基板に照射される集光したレーザー光の前記ガラス基板内での焦点位置が、前記ガラス基板の応力層以外の位置とされること、
 を特徴とする請求項9~13のいずれか1つに記載の太陽電池の製造方法。
In the case where the glass substrate forming the light scattering structure includes a stress layer, the focal position in the glass substrate of the condensed laser light irradiated to the glass substrate is a position other than the stress layer of the glass substrate. Being
The method for manufacturing a solar cell according to any one of claims 9 to 13, wherein:
PCT/JP2012/056732 2011-05-23 2012-03-15 Solar cell and method for manufacturing same Ceased WO2012160862A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013516237A JPWO2012160862A1 (en) 2011-05-23 2012-03-15 Solar cell and method for manufacturing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011-114860 2011-05-23
JP2011114860 2011-05-23

Publications (1)

Publication Number Publication Date
WO2012160862A1 true WO2012160862A1 (en) 2012-11-29

Family

ID=47216951

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2012/056732 Ceased WO2012160862A1 (en) 2011-05-23 2012-03-15 Solar cell and method for manufacturing same

Country Status (2)

Country Link
JP (1) JPWO2012160862A1 (en)
WO (1) WO2012160862A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017085750A (en) * 2015-10-27 2017-05-18 株式会社カネカ Solar cell module for windows and windows
JP2017151414A (en) * 2016-02-25 2017-08-31 パナソニックIpマネジメント株式会社 Display device, manufacturing method thereof, and manufacturing device
CN111129784A (en) * 2020-01-10 2020-05-08 南京航空航天大学 High-light-transmittance ultra-wideband low-scattering super surface suitable for solar cell array

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05335610A (en) * 1992-03-03 1993-12-17 Canon Inc Photovoltaic device
JPH1070294A (en) * 1996-08-28 1998-03-10 Sharp Corp Solar cell substrate and method of manufacturing the same
JP2001053315A (en) * 1999-05-31 2001-02-23 Kanegafuchi Chem Ind Co Ltd Solar battery module and manufacture thereof
JP2003110128A (en) * 2001-09-28 2003-04-11 Sharp Corp Thin film solar cell module and method of manufacturing the same
JP2004323252A (en) * 2003-04-21 2004-11-18 Hideaki Fujita Tempered glass marking method and tempered glass
JP2005038681A (en) * 2003-07-18 2005-02-10 Toyota Industries Corp Transparent substrate for forming bottom emission type light-emitting element, and light-emitting device using same
JP2009060062A (en) * 2007-09-04 2009-03-19 Ulvac Japan Ltd Thin-film solar cell, and its manufacturing method
JP2009231499A (en) * 2008-03-21 2009-10-08 Mitsubishi Electric Corp Photoelectric conversion device
JP2009237136A (en) * 2008-03-26 2009-10-15 Hoya Corp Transparent member having scattering plane inside, method for manufacturing the same, and imaging device equipped therewith
WO2009143561A1 (en) * 2008-05-25 2009-12-03 3Gsolar Ltd Optical enhancement for solar devices
JP2011515866A (en) * 2008-03-25 2011-05-19 コーニング インコーポレイテッド Substrate for photovoltaic power generation

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60148173A (en) * 1984-01-12 1985-08-05 Seikosha Co Ltd Colored solar cell

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05335610A (en) * 1992-03-03 1993-12-17 Canon Inc Photovoltaic device
JPH1070294A (en) * 1996-08-28 1998-03-10 Sharp Corp Solar cell substrate and method of manufacturing the same
JP2001053315A (en) * 1999-05-31 2001-02-23 Kanegafuchi Chem Ind Co Ltd Solar battery module and manufacture thereof
JP2003110128A (en) * 2001-09-28 2003-04-11 Sharp Corp Thin film solar cell module and method of manufacturing the same
JP2004323252A (en) * 2003-04-21 2004-11-18 Hideaki Fujita Tempered glass marking method and tempered glass
JP2005038681A (en) * 2003-07-18 2005-02-10 Toyota Industries Corp Transparent substrate for forming bottom emission type light-emitting element, and light-emitting device using same
JP2009060062A (en) * 2007-09-04 2009-03-19 Ulvac Japan Ltd Thin-film solar cell, and its manufacturing method
JP2009231499A (en) * 2008-03-21 2009-10-08 Mitsubishi Electric Corp Photoelectric conversion device
JP2011515866A (en) * 2008-03-25 2011-05-19 コーニング インコーポレイテッド Substrate for photovoltaic power generation
JP2009237136A (en) * 2008-03-26 2009-10-15 Hoya Corp Transparent member having scattering plane inside, method for manufacturing the same, and imaging device equipped therewith
WO2009143561A1 (en) * 2008-05-25 2009-12-03 3Gsolar Ltd Optical enhancement for solar devices

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017085750A (en) * 2015-10-27 2017-05-18 株式会社カネカ Solar cell module for windows and windows
JP2017151414A (en) * 2016-02-25 2017-08-31 パナソニックIpマネジメント株式会社 Display device, manufacturing method thereof, and manufacturing device
CN111129784A (en) * 2020-01-10 2020-05-08 南京航空航天大学 High-light-transmittance ultra-wideband low-scattering super surface suitable for solar cell array

Also Published As

Publication number Publication date
JPWO2012160862A1 (en) 2014-07-31

Similar Documents

Publication Publication Date Title
JP5328363B2 (en) Method for manufacturing solar cell element and solar cell element
JP4999937B2 (en) Solar cell element and method for manufacturing solar cell element
TWI431792B (en) An integrated multi-junction photoelectric conversion device, and a method of manufacturing the same
US20110041889A1 (en) Integrated tandem-type thin film solar cell module and method for manufacturing the same
CN102239571B (en) Method for manufacturing thin-film photoelectric conversion device
JP2015095653A (en) Solar cell
US20110114156A1 (en) Photovoltaic modules having a built-in bypass diode and methods for manufacturing photovoltaic modules having a built-in bypass diode
EP2509117A1 (en) Photoelectric conversion module, method for manufacturing same, and power generation device
KR20180076197A (en) Solar cell and method for manufacturing the same
JP5377520B2 (en) Photoelectric conversion cell, photoelectric conversion module, and method for manufacturing photoelectric conversion cell
KR101910642B1 (en) Solar cell and manufacturing method thereof
JP2016122749A (en) Solar battery element and solar battery module
TWI459572B (en) Light power device and its manufacturing method
JPWO2009150980A1 (en) Thin film photoelectric conversion device and manufacturing method thereof
JP5871786B2 (en) Solar cell module
WO2012160862A1 (en) Solar cell and method for manufacturing same
KR101011222B1 (en) Solar cell and manufacturing method
JP4261169B2 (en) Translucent thin film solar cell and method for producing translucent thin film solar cell module
JP2014011307A (en) Thin film solar cell and manufacturing method therefor, and thin film solar cell module
JP2011138951A (en) Thin-film solar battery and method for manufacturing the same
KR20190141447A (en) Thin-film solar module and method for manufacturing the same
KR20190021890A (en) Solar cell and solar cell panel including the same
JP2014135446A (en) Photoelectric conversion device and method of manufacturing the same
KR102060708B1 (en) Solar cell
KR101072531B1 (en) Solar cell and method for fabricating the same

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12789785

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2013516237

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 12789785

Country of ref document: EP

Kind code of ref document: A1