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WO2012154045A1 - Procédé de formation d'une couche d'électrode à faible travail d'extraction, et couche d'électrode - Google Patents

Procédé de formation d'une couche d'électrode à faible travail d'extraction, et couche d'électrode Download PDF

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Publication number
WO2012154045A1
WO2012154045A1 PCT/NL2012/050314 NL2012050314W WO2012154045A1 WO 2012154045 A1 WO2012154045 A1 WO 2012154045A1 NL 2012050314 W NL2012050314 W NL 2012050314W WO 2012154045 A1 WO2012154045 A1 WO 2012154045A1
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WIPO (PCT)
Prior art keywords
layer
conductive polymer
contacting
electrode
conducting
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Ceased
Application number
PCT/NL2012/050314
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English (en)
Inventor
Siegfried Christiaan VEENSTRA
Wilhelmus Johannes Hermanus VERHEES
Yulia Galagan
Nadia Grossiord
Hieronymus Antonius Josephus Maria Andriessen
Johannes Martinus Kroon
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Energy Research Centre of the Netherlands
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Energy Research Centre of the Netherlands
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Publication of WO2012154045A1 publication Critical patent/WO2012154045A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a method for providing an electrode layer.
  • the work leading to the invention described herein has received funding from the European Union Seventh Framework Programme under grant agreement nr. 248678 (FP7-ICT-2009-4).
  • ITO Indium Tin Oxide
  • PEDOT:PSS poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)
  • PEDOT:PSS poly(styrenesulfonate)
  • the present invention seeks to provide an improved manufacturing method for providing an electrode with a low work function, which can be used in combination with organic based electronic devices, such as organic photovoltaic devices, organic LED's, etc.
  • a method according to the preamble defined above is provided, the method comprising applying a metal in a solution to form a conducting layer,
  • a conductive polymer in a solution as a conductive polymer layer and applying a contacting layer using a solution, wherein the conducting layer is directly adjacent to the conductive polymer layer, to the contacting layer, or to the conductive polymer layer and the contacting layer.
  • Directly adjacent to is to be understood that there are no intermediate layers present between the layers as indicated, i.e. the conducting layer is in direct contact with the other layer(s).
  • the present invention allows to obtain an electrode layer or devices with such an electrode layer using layer formation techniques that can be applied in normal processing environments, without requiring any vacuum or high temperature steps.
  • the present invention relates to an electrode layer comprising a substrate, a conducting layer, a conductive polymer layer of a conducting polymer, and a contacting layer wherein the conducting layer comprises a metal selected from the group comprising Ag, Cu, Al, wherein the conductive polymer is PEDOT:PSS, and wherein the contacting layer comprises zinc oxide, aluminum-doped zinc oxide, titanium oxide or cesium carbonate wherein the conducting layer is directly adjacent to the conductive polymer layer, to the contacting layer, or to the conductive polymer layer and the contacting layer.
  • the conducting layer comprises a metal selected from the group comprising Ag, Cu, Al, wherein the conductive polymer is PEDOT:PSS, and wherein the contacting layer comprises zinc oxide, aluminum-doped zinc oxide, titanium oxide or cesium carbonate wherein the conducting layer is directly adjacent to the conductive polymer layer, to the contacting layer, or to the conductive polymer layer and the contacting layer.
  • the present invention relates to a photo-active device comprising at least one electrode layer according to the present invention embodiments.
  • Fig. 1 shows a cross sectional view of an electrode manufactured according to an embodiment of the present invention
  • Fig. 2 shows a cross sectional view of a PV cell manufactured according to an embodiment of the present invention. Detailed description of exemplary embodiments
  • the present invention provides a method for manufacturing an electrode layer which is very well suited for application in organic electronics, such as organic solar cells and organic light emitting devices, and which manufacturing process allows for high volume low cost production of such electrode layers.
  • the basic idea is to provide a (semi) transparent electrode layer using a combination of three materials, more specifically a highly conducting metal grid (e.g. silver, aluminum or copper), a highly conducting polymer layer such as poly(3,4- ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), and a contacting layer using e.g. a metal oxide like Zinc oxide (ZnO).
  • a highly conducting metal grid e.g. silver, aluminum or copper
  • PEDOT:PSS poly(styrenesulfonate)
  • ZnO Zinc oxide
  • the electrode layer manufactured according to the present invention embodiments allows a good electrical contact with the conduction band of a semiconductor material (especially of an organic semiconductor material).
  • the (ZnO) contacting layer e.g. forms a selective contact to a bulk hetero-junction layer (e.g. P3HT:[C60]PCBM, see below) to collect the electrons from the conduction band of the electron acceptor material (i.e. the [C60JPCBM in the example described below).
  • PEDOT:PSS The highly conducting polymer (PEDOT:PSS) forms a good contact with the highly conducting metal grid (Ag).
  • PEDOT:PSS is a highly doped p-type
  • the conductive polymer layer thus also acts as a contacting layer, but has a reverse effect compared to the (ZnO) contacting layer.
  • the conductive polymer layer combines two characteristics, i.e. its (lateral) conductivity and its contacting
  • the conductive polymer layer can be used in various embodiments, e.g. as transparent conductor (between metal grids) or as selective conductor (contacting layer, e.g. when using a full area metal (Ag) layer), or in a combination.
  • the metal layer printed Ag layer is only used to convey charge carriers.
  • the electrode can be formed from various solutions on different types of substrates. No processing steps are needed which require a vacuum, or a high temperature (>150°C). The resulting electrode is mechanically and chemically stable, which allows to add further layers using wet chemical processes, as will be described below in more detail. Also a protective environment, such as an oxygen free protective environment, is not needed for this electrode.
  • the manufacturing steps of the present invention also allow to obtain a high speed of production, using various printing and/or coating techniques to apply the various layers.
  • all the layers can be manufactured using solution processing in ambient conditions, such as a printing or coating type of processing step, which is far more cost-effective.
  • Alternative processing steps using solution processing in ambient conditions are e.g. spray deposition, ambient plasma assisted deposition (atmospheric pressure), electrolytic or electrochemical deposition.
  • the layer formation steps according to the present invention embodiments are executed in a controlled environment with a controlled relative humidity and temperature.
  • this electron collecting layer comprises Ag, PEDOT:PSS and ZnO.
  • the Ag layer can be made semi-transparent by printing the Ag in a pattern (finger pattern, grid pattern, honeycomb pattern, etc.).
  • a hole collecting layer can be formed using similar techniques, comprising Ag and PEDOT material.
  • the Ag can be e.g. printed in a pattern to allow forming a semi-transparent layer.
  • a cross sectional view is shown of an electrode layer 10 manufactured according to one of the present invention embodiments.
  • the method comprising applying a metal in a solution to a substrate to form a conducting layer 2, applying a conductive polymer in a solution on top of the conducting layer 2 as a conductive polymer layer 3, and applying a contacting layer 4 using a solution on top of the conductive polymer layer 3.
  • Ag in a liquid solution is provided as a conducting layer 2, in this embodiment as a patterned layer.
  • a commercially available ink (SunTronic U5603 ink of SunChemical) is used to ink jet print the Ag grid as the conducting layer 2.
  • This ink comprises 20 wt% Ag nanoparticles in organic solvents such as ethanediol.
  • the conducting layer 2 is e.g. applied using an ink jet printing technique, which is known as such.
  • the conducting layer 2 can thus be applied with a well defined thickness of the conducting layer 2, e.g. with a thickness of about 500 nm. In further embodiments, the thickness of the conducting layer 2 is between 200 and lOOOnm. When thicker (higher) lines are used, the line resistance will decrease, further enhancing the efficiency of the electrode layer 10.
  • a solution is applied for forming a conductive polymer layer 3 of a highly conducting polymer, such as the PEDOT:PSS material mentioned above.
  • a highly conductive variant of the PEDOT:PSS material (HC PEDOT:PSS) is used in a further embodiment.
  • the thickness of this conductive polymer layer 3 is about 70 nm. In further embodiments, the thickness of the conductive polymer layer 3 is between 30-300nm, e.g. between 70-150nm.
  • the solution e.g. comprises a solvent and other constituents, which allows the conductive polymer layer 3 to be applied using ink jet printing or other in-solution techniques. After applying, the solvent evaporates and the polymer layer (conductive polymer layer 3) is formed.
  • the final layer (contacting layer 4) of the electrode layer 10 is formed by applying a solution which results in formation of a e.g. a ZnO layer, e.g. using wet chemical coating techniques such as spin coating techniques.
  • the ZnO layer (contacting layer 4) has a thickness of about 30 nm in an exemplary embodiment.
  • the ZnO layer (contacting layer 4) 4 in further embodiments has a thickness in the range from 5-200nm.
  • the contacting layer 4 is of an n-type semiconductor material such as ZnO, and can be solution processed.
  • a ZnO layer 4 may be processed using ZnO
  • nanoparticles in a solution as e.g. described in W. J. E. Beek, M. M. Wienk, M.
  • AZO aluminum-doped zinc oxide
  • a contacting layer 4 is provided further comprising titanium oxide (TiO x ) or cesium carbonate (CS 2 CO 3 ).
  • the conductive polymer layer 3 is allowed to dry before applying the contacting layer 4.
  • the contacting layer 4 is applied to the conductive polymer layer 3 after the latter has dried, no problems can arise with respect to possible chemical reactions between the material of the conductive polymer layer 3 (and its solvents) and the ZnO.
  • the PEDOT:PSS material is applied to an existing ZnO layer, and due to the acid nature of the PEDOT:PSS in solution, irregularities or faults may result in the ZnO layer in this sequence of process steps.
  • the contacting layer 4 is applied in a controlled environment, wherein the relative humidity is kept low, and the temperature is also controlled.
  • the contacting layer 4 may be applied to the conductive polymer layer 3 using a precursor technique, e.g. as described in ⁇ facile route to inverted polymer solar cells using a precursor based zinc oxide electron transport layer', P. de Bruyn et al. Organic Electronics 11, 1419, 2010.
  • the contacting layer 4 is e.g. made by spin casting of a zinc acetyl acetonate hydrate solution as precursor material, followed by low temperature annealing under ambient conditions (pyrolysis) resulting formation of ZnO. This has the advantage that only a single processing step is needed to make the contacting layer 4.
  • the present invention method embodiment encompasses both consecutive application of the three layers 2-4, and simultaneously applying two or more of the layers (and possible further layers to form a device).
  • the application of a layer can be done after drying of the previous layer, or the application can be implemented wet on wet. Techniques like multi slit slot die may be used in the method embodiments.
  • the resulting electrode layer 10 has a working function of about 4eV, which makes it particularly useful in combination with further semi-conductor materials, e.g. as mentioned above as an electron collecting layer in polymer solar cells.
  • the substrate 1 is a flexible substrate, e.g. a plastic substrate.
  • the substrate 1 is a glass substrate or a metal foil substrate having an insulating layer.
  • material for the substrate 1 include, but or not limited to glass, Si0 2 , foil materials like PET, PEN, kapton, metal (Ti, Al, Fe, stainless steel etc.), foils with a planarization layer, a plastic substrate with a barrier layer such as SiN x , SiO x , A10 x with or without a planarization layer.
  • the conducting layer 2 is screen printed, e.g. using Inktec TEC-PA-010 hybrid nano silver paste with a silver content of 55 +/-10 wt%, a blend of silver nano particles and a soluble silver complex.
  • Inktec TEC-PA-010 hybrid nano silver paste with a silver content of 55 +/-10 wt%, a blend of silver nano particles and a soluble silver complex it is e.g. also possible to embed the conducting (patterned) layer 2 in the substrate 1, which allows to obtain a substantially flat surface for applying the next layer.
  • the height of the lines in the conducting layer 2 can be increased (e.g. even up to 0.3 to 20 ⁇ or even more) allowing e.g. to use Ag lines with large cross sections and thus lower line resistance.
  • FIG. 2 A further exemplary device which may be manufactured using the present invention embodiments is shown in the cross sectional view of Fig. 2.
  • an electrode 10 is formed as described with reference to Fig. 1.
  • an active layer 5 is formed, e.g. a photo active layer of a (polymer) semiconductor material, which active layer 5 is formed by using spin coating technique.
  • Alternative deposition techniques include printing methods (such as flexo, gravure, reverse gravure, offset, reverse offset, ink jet, pad printing, flat bed or rotory screen printing), coating methods (such as (ultrasonic) spray coating, dip, kiss, slit, wire bar, flow coating, slot die coating, doctor blade, curtain coating etc), spray techniques, plasma (assisted) deposition techniques, electrolytic or electrochemical deposition techniques.
  • printing methods such as flexo, gravure, reverse gravure, offset, reverse offset, ink jet, pad printing, flat bed or rotory screen printing
  • coating methods such as (ultrasonic) spray coating, dip, kiss, slit, wire bar, flow coating, slot die coating, doctor blade, curtain coating etc
  • spray techniques such as plasma (assisted) deposition techniques, electrolytic or electrochemical deposition techniques.
  • the active layer 5 e.g. comprises P3HT:[C60]PCBM material (a combination of poly(3-hexylthiophene), a p-type semiconductor, and Methanofullurene phenyl-C61- butyric acid methyl ester, an effective solution processable n-type organic
  • the thickness of the active layer 5 is about 260 nm. In further embodiments, the thickness of the active layer 5 is between 20 and lOOOnm.
  • a further electrode 11 is formed comprising a further layer 6 of PEDOT:PSS on the layer of semiconductor material 5 and a further metal layer 7 of Ag on the further layer 6 of PEDOT:PSS.
  • the further layer 6 of PEDOT:PSS material is applied using e.g. spin coating, and in an exemplary embodiment has a thickness of about lOOOnm. In further embodiments, the further layer 6 has a thickness of between 900 and lOOOnm.
  • the further metal layer 7 is applied using e.g. a screen printing technique, and in an exemplary embodiment has a thickness of between 100 and 17000nm. In case the further metal layer 7 is screen printed, the thickness may be in the high end of this range. E.g. the commercially available UV curable Rexalpha RA FS FD 018 ink of Toyo Inc may be used, which is a solvent free, UV curable ink. In case the further metal layer 7 is applied as a grid layer as well, e.g. using ink jet printing technique as discussed above with reference to the conducting layer 2, the layer thickness may be in the lower end of the range (100-lOOOnm).
  • the further metal layer 7 (as solid layer) provides for a reflective layer in the inverted PV cell structure as shown in Fig. 2.
  • the result is a complete PV cell which functions effectively and is produced entirely without any vacuum or high temperature processing steps.
  • the further metal layer 7 may be made of Al or Cu materials.
  • the combination of conducting layer 2 and conductive polymer layer 3 functions as a charge collection layer, and the contacting layer 4 as an electron transport layer, in contact with the bulk hetero- junction formed by the active layer 5.
  • the further layer 6 of PEDOT:PSS acts as hole transport layer, and the further metal layer 7 as hole collecting layer.
  • a further metal oxide (e.g. ZnO) layer is added as part of further electrode 11 of the embodiment of Fig. 2 (e.g. on top of the further metal layer 7), resulting in a further electrode 11 having a similar structure as the (triple layer) electrode layer 10.
  • a further metal oxide (e.g. ZnO) layer is added as part of further electrode 11 of the embodiment of Fig. 2 (e.g. on top of the further metal layer 7), resulting in a further electrode 11 having a similar structure as the (triple layer) electrode layer 10.
  • a triple layer electrode having the structure as described is also usable as an intermediate structure, e.g. in multi junction cells.
  • the conducting layer 2, conductive polymer layer 3 and contacting layer 4 are then sandwiched e.g. between two photo active layers (possibly each with different characteristics).
  • the conductive polymer layer 3 may comprise two or more layers of different polymer material.
  • the conductive polymer layer 3 can also have a protection layer function, e.g. when used between a photo-active layer 5 and a metal electrode. Degradation of e.g. a PV cell when using metal ink to form the metal electrode can then be prevented, especially when using a relatively thick conducting polymer layer 3.
  • a protection layer function e.g. when used between a photo-active layer 5 and a metal electrode.
  • Degradation of e.g. a PV cell when using metal ink to form the metal electrode can then be prevented, especially when using a relatively thick conducting polymer layer 3.
  • conductivity and transparency of a conducting polymer layer 3. When using two layers, one can be chosen to be a thin highly conductive sub-layer (having a low transparency) and the other as a relative thick sub-layer with high transparency (and a somewhat lower conductivity).
  • a multi-layer version of the conductive polymer layer 3 can advantageously be used when the electrode layer 10 is applied to a substrate.
  • the more transparent sub-layer can then be used as a planarization layer when a conducting layer 2 in the form of a metal grid is used, and a further sub-layer can also be optimized.
  • the use of a relatively thick conductive polymer (sub-)layer can also increase process yield.
  • the electrode layer 10 or the further electrode 11 is embodied as a semi-transparent layer using a grid printing technique such as ink jet printing. This allows to manufacture the inverted PV cell structure as shown in the embodiment of Fig. 2, but might also allow to manufacture a 'normal' PV cell structure.
  • the electrode layer 10, which in the embodiments described above is a (semi-)transparent electrode, is adapted to be a reflective electrode layer 10. This allows to influence light characteristics in layers above (or below) the electrode layer 10.
  • the electrode layer 10 (and further embodiments of the present invention, i.e. the top or further electrode 11, or the intermediate structure) may in further
  • embodiments comprise the same type of layers, but in a different order.
  • triple layer electrode layers 10 may be envisaged.
  • M metal
  • conductive polymer layer 3 metal
  • MO metal oxide
  • M-PEDOT-MO see description above, M can also be a full layer
  • PEDOT-M-MO PEDOT-MO-M.
  • the conducting layer 2 (M) can be patterned or full, and the electrode layer can be MO-PEDOT-M, MO-M-PEDOT or M-MO-PEDOT.
  • a substrate 1 is indicated as S
  • a semiconductor layer 5 as PAL (photo-active layer), PALI or PAL2.
  • the underlying device stack may be an electrode (stack) or an electrode (stack + device stack) for multi-junction devices.
  • the metal layer 2 may be an embedded metal grid. Furthermore, in these cases (version la, 2a), the metal layer 2 may also be a full metal layer (then acting as reflective layer), in which case the substrate 1 may be a non-transparent substrate. Also in version 3c or 5c, the metal layer 2 may be a full metal layer acting as reflective layer.
  • inverted single junction cells la, b, or c, each with 3a, b or c; la with embedded metal layer with 3a, b or c; la with full metal layer with 3a, b or c.
  • 2a, b or c each with 4a, b or c and 5c with full metal layer; 2a with embedded metal layer with 6a, b or c and with 3a, b or c; 2a with full metal layer with 6a, b or c and with 3a, b or c.
  • the electrode layer 10 as described above may also be combined with (nano-) structured layers (not shown), which may also be effective in influencing light propagation characteristics in adjacent layers (when present).
  • These structured layers may be added using techniques which are known as such, e.g. from nano-imprint lithography (NIL) techniques.
  • NIL nano-imprint lithography
  • the freedom of design could be beneficial for aesthetic reasons, to ease integration of a PV function in a product and/or to increase the performance of a PV module.
  • Increased module performance is possible when the cell size in a PV module increases as this increases the ratio between active area over the total area of a module (less area is used for interconnections).
  • the triple layer electrode layer 10, 11 in the embodiments as described above may be used for organic PV cells as mentioned, but also for organic LED's, tandem cells, triple junction cells.
  • steps relating to the various invention embodiment using an all- solution based process can be used in a variety of applications, including but not limited to (Organic) Photo-Voltaic cells, (Organic) LEDs, Organic lighting devices, organic material based electronic circuitry, etc.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne un procédé destiné à générer une couche (10) d'électrode, comportant les étapes consistant à : appliquer un métal en solution pour former une couche conductrice (2) ; appliquer un polymère conducteur en solution sous la forme d'une couche (3) de polymère conducteur ; et appliquer une couche (4) de contact à l'aide d'une solution. La couche conductrice (2) est directement adjacente à la couche (3) de polymère conducteur et / ou à la couche (4) de contact. L'invention concerne également une couche (10) d'électrode et un dispositif photo-actif comportant au moins une couche (10) d'électrode de ce type.
PCT/NL2012/050314 2011-05-10 2012-05-09 Procédé de formation d'une couche d'électrode à faible travail d'extraction, et couche d'électrode Ceased WO2012154045A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL2006756A NL2006756C2 (en) 2011-05-10 2011-05-10 Method for forming an electrode layer with a low work function, and electrode layer.
NL2006756 2011-05-10

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WO2012154045A1 true WO2012154045A1 (fr) 2012-11-15

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FR3013897A1 (fr) * 2013-11-26 2015-05-29 Commissariat Energie Atomique Dispositifs electroniques organiques
WO2015079380A1 (fr) * 2013-11-26 2015-06-04 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositifs electroniques organiques
JP2017506815A (ja) * 2013-11-26 2017-03-09 コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ 有機電子デバイス
US9882155B2 (en) 2013-11-26 2018-01-30 Commissariat A L'energie Atomique Et Aux Energies Alternatives Organic electronic devices
CN113161490A (zh) * 2021-03-09 2021-07-23 嘉兴学院 一种AuNCs-PEDOT:PSS复合柔性电极及太阳能电池器件

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