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WO2012144851A3 - Appareil de façonnage de lingots - Google Patents

Appareil de façonnage de lingots Download PDF

Info

Publication number
WO2012144851A3
WO2012144851A3 PCT/KR2012/003057 KR2012003057W WO2012144851A3 WO 2012144851 A3 WO2012144851 A3 WO 2012144851A3 KR 2012003057 W KR2012003057 W KR 2012003057W WO 2012144851 A3 WO2012144851 A3 WO 2012144851A3
Authority
WO
WIPO (PCT)
Prior art keywords
upper cover
seed crystal
ingot
source material
crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2012/003057
Other languages
English (en)
Other versions
WO2012144851A2 (fr
Inventor
Bum Sup Kim
Chang Hyun Son
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of WO2012144851A2 publication Critical patent/WO2012144851A2/fr
Publication of WO2012144851A3 publication Critical patent/WO2012144851A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

L'invention concerne un appareil destiné à façonner un lingot, comprenant un creuset et un couvercle supérieur. Le creuset reçoit un matériau source. Le couvercle supérieur est disposé par-dessus le matériau source. Le couvercle supérieur comprend une unité de fixation de cristal d'amorce qui maintient un cristal d'amorce, ainsi qu'une partie de guidage qui guide l'unité de fixation de cristal d'amorce.
PCT/KR2012/003057 2011-04-21 2012-04-20 Appareil de façonnage de lingots Ceased WO2012144851A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0037236 2011-04-21
KR1020110037236A KR20120119365A (ko) 2011-04-21 2011-04-21 잉곳 제조 장치

Publications (2)

Publication Number Publication Date
WO2012144851A2 WO2012144851A2 (fr) 2012-10-26
WO2012144851A3 true WO2012144851A3 (fr) 2013-03-21

Family

ID=47042070

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/003057 Ceased WO2012144851A2 (fr) 2011-04-21 2012-04-20 Appareil de façonnage de lingots

Country Status (2)

Country Link
KR (1) KR20120119365A (fr)
WO (1) WO2012144851A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101538556B1 (ko) * 2013-12-26 2015-07-22 주식회사 포스코 물리적 체결을 이용한 대구경 단결정 성장장치 및 방법
KR102122668B1 (ko) 2018-12-12 2020-06-12 에스케이씨 주식회사 잉곳의 제조장치 및 이를 이용한 탄화규소 잉곳의 제조방법
CN116497437B (zh) * 2023-06-25 2023-08-18 通威微电子有限公司 一种碳化硅生长装置和生长方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070283880A1 (en) * 2005-03-24 2007-12-13 Tsvetkov Valeri F Apparatus and method for the production of bulk silicon carbide single crystals
KR20090078516A (ko) * 2008-01-15 2009-07-20 (주)크리스밴드 대구경 고품질 탄화규소 단결정 잉곳 성장을 위한 종자정부착 방법
KR20100070156A (ko) * 2008-12-17 2010-06-25 (주)크리스밴드 종자정 어셈블리 및 그 제조 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070283880A1 (en) * 2005-03-24 2007-12-13 Tsvetkov Valeri F Apparatus and method for the production of bulk silicon carbide single crystals
KR20090078516A (ko) * 2008-01-15 2009-07-20 (주)크리스밴드 대구경 고품질 탄화규소 단결정 잉곳 성장을 위한 종자정부착 방법
KR20100070156A (ko) * 2008-12-17 2010-06-25 (주)크리스밴드 종자정 어셈블리 및 그 제조 방법

Also Published As

Publication number Publication date
KR20120119365A (ko) 2012-10-31
WO2012144851A2 (fr) 2012-10-26

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