[go: up one dir, main page]

WO2012141843A2 - Jauges de contrainte piézorésistives à haute température constituées de silicium sur isolant - Google Patents

Jauges de contrainte piézorésistives à haute température constituées de silicium sur isolant Download PDF

Info

Publication number
WO2012141843A2
WO2012141843A2 PCT/US2012/029467 US2012029467W WO2012141843A2 WO 2012141843 A2 WO2012141843 A2 WO 2012141843A2 US 2012029467 W US2012029467 W US 2012029467W WO 2012141843 A2 WO2012141843 A2 WO 2012141843A2
Authority
WO
WIPO (PCT)
Prior art keywords
piezo
parameter
resistor
insulator
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2012/029467
Other languages
English (en)
Other versions
WO2012141843A3 (fr
Inventor
Julian KAHLER
Erwin Peiner
Andrej STRANZ
Andreas Waag
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Baker Hughes Holdings LLC
Original Assignee
Baker Hughes Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Baker Hughes Inc filed Critical Baker Hughes Inc
Publication of WO2012141843A2 publication Critical patent/WO2012141843A2/fr
Publication of WO2012141843A3 publication Critical patent/WO2012141843A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • E—FIXED CONSTRUCTIONS
    • E21—EARTH OR ROCK DRILLING; MINING
    • E21B—EARTH OR ROCK DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS
    • E21B47/00—Survey of boreholes or wells
    • E21B47/01—Devices for supporting measuring instruments on drill bits, pipes, rods or wirelines; Protecting measuring instruments in boreholes against heat, shock, pressure or the like
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
    • E—FIXED CONSTRUCTIONS
    • E21—EARTH OR ROCK DRILLING; MINING
    • E21B—EARTH OR ROCK DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS
    • E21B47/00—Survey of boreholes or wells
    • E21B47/01—Devices for supporting measuring instruments on drill bits, pipes, rods or wirelines; Protecting measuring instruments in boreholes against heat, shock, pressure or the like
    • E21B47/017—Protecting measuring instruments
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/26—Auxiliary measures taken, or devices used, in connection with the measurement of force, e.g. for preventing influence of transverse components of force, for preventing overload

Definitions

  • the invention disclosed herein relates to measuring parameters in a downhole environment and, in particular, to measuring the parameters using a resistive bridge.
  • Boreholes are drilled deep into the earth for many applications such as carbon sequestration, geothermal production, and hydrocarbon exploration and production.
  • Many different types of tools and instruments may be disposed in the boreholes to perform various tasks.
  • These tools and instruments generally include one or more sensors used to measure parameters such as pressure or strain. Typically, very high temperatures up to 200 °C or even more are encountered by the tools and instruments and, thus, the sensors when they are disposed deep into the earth.
  • Piezoresistive bridges are widely used in sensors for highly sensitive measurements of mechanical stress in very small sensors.
  • their use at high temperatures is limited to less than about 125 °C due to leakage currents.
  • Compensating circuits to compensate for the leakage currents add complexity to the sensors.
  • the compensating circuits cannot fully compensate for the strong temperature dependence of the measured signal resulting in inaccurate measurements. It would be well received in the drilling industry if sensors could be improved to operate accurately at high downhole temperatures.
  • the apparatus includes a sensor configured to be disposed in the borehole and having a piezo -resistor fabricated from a semiconductor on an insulator wherein a portion of the semiconductor is etched to the insulator to form the piezo-resistor, the piezo -resistor being responsive to the parameter.
  • an apparatus for measuring a parameter in a borehole penetrating the earth includes: a carrier configured to be conveyed through the borehole; and a sensor disposed at the carrier and having a piezo-resistor fabricated from a semiconductor on an insulator wherein a portion of the semiconductor is etched to the insulator to form the piezo-resistor, the piezo-resistor being responsive to the downhole parameter.
  • a method for measuring a parameter in a borehole penetrating the earth includes: disposing a sensor into the borehole, the sensor having a piezo-resistor fabricated from a semiconductor on an insulator wherein a portion of the semiconductor is etched to the insulator to form the piezo-resistor, the piezo-resistor being responsive to the parameter; and measuring the parameter using the sensor.
  • FIG. 1 illustrates an exemplary embodiment of a downhole tool having a sensor disposed in a borehole penetrating the earth;
  • FIG. 2 depicts aspects of the sensor having a piezoresistive bridge
  • FIG. 3 depicts aspects of silicon-on- insulator construction
  • FIG. 4 presents one example of a method for estimating a downhole parameter
  • FIGS. 5A-5H depict aspects of fabricating the sensor using a double-layer silicon on insulator material.
  • FIG. 1 illustrates an exemplary embodiment of a downhole tool 10 disposed in a borehole 2 penetrating the earth 3, which includes an earth formation 4.
  • the earth formation 4 represents any subsurface materials of interest.
  • the downhole tool 10 includes a sensor 9 configured to perform a measurement of a parameter in the borehole 2.
  • Non- limiting embodiments of the parameter include stress, strain, pressure, force, acceleration, contact, tilt, and magnetic fluctuations.
  • the downhole tool 10 is configured to perform a measurement of a property of the formation 4 in conjunction with an instrument 1 1 and the sensor 9.
  • the instrument 11 is a formation tester configured to extract a formation fluid from the formation 4.
  • the sensor 9 can be used to measure the pressure at which the formation fluid begins to flow into the downhole tool 10 to estimate the formation fluid pressure.
  • the downhole tool 10 is conveyed through the borehole 2 by a carrier 5.
  • a measurement- while-drilling (MWD) embodiment is depicted in which the carrier 5 is a drill string 6.
  • the downhole tool 10 is disposed is a drill collar surrounding the drill string 6.
  • a drilling rig 8 is configured to rotate the drill string 5 and the drill bit 7 in order to drill the borehole 2.
  • the carrier 5 can be a wireline used for wireline logging applications in existing boreholes.
  • a surface computer processing system 13 is used to record, process, or display measurements performed by the downhole tool 10 and/or the sensor 9.
  • the downhole tool 10 includes downhole electronics 12.
  • the sensor 9 includes one or more piezo-resistors 20, which are built using semiconductor fabrication technology. Resistance changes in the piezo-resistors 20 are due to a
  • the piezo-resistors 20 are built into a piezoresistive effect.
  • the piezo-resistors 20 are built into a piezoresistive effect.
  • the piezo-resistors 20 are built into a piezoresistive effect.
  • the piezo-resistors 20 are built into a piezoresistive effect.
  • the piezo-resistors 20 are built into a piezoresistive effect.
  • semiconductor 21 such as a mono crystalline semiconductor having a crystal lattice. Doping of the semiconductor 21 is used to define the conductivity characteristics of the
  • the piezo-resistors 20 are coupled to form a network 22.
  • the network 22 forms a Wheatstone bridge 23 as shown in FIG. 2.
  • the network 22 also includes interconnects 26 between the piezo-resistors 20 and terminals 27 providing connections to external components.
  • a constant current source 24 supplies a constant current input electrical signal to terminals A and B of the bridge 23.
  • An output signal from the bridge 23 at terminals C and D is measured by an amplifier 25.
  • the output signal will change in response to a change in the parameter being measured by the sensor 9. Hence, by measuring a change in the output signal, a change in the parameter can be measured.
  • Different networks 22 and piezoresistive bridges can be used depending on the application of the sensor 9. One of skill in the art will understand the operation of
  • the network 22 may form other types of bridges that use one or more of the piezo-resistors 20 as components.
  • Other types of bridges include a Kelvin bridge and a Wein bridge.
  • the Wein bridge is used as an oscillator. As the values of the piezo-resistors 20 change from deformation of the crystal lattice in response to the measured parameter, the frequency of the oscillator will change. By measuring a change in the output frequency of the oscillator, a change in the parameter can be measured.
  • the semiconductor 21 is made as a layer of a silicon-on- insulator (SOI) wafer or substrate 30.
  • SOI wafer 30 includes a layer of the semiconductor 21, an insulator layer 31, and another semiconductor layer 32.
  • Non-limiting embodiments of materials used to form the insulator layer 31 include silicon dioxide and sapphire.
  • the other semiconductor layer 32 can be the same material as the semiconductor 21 such as mono crystalline silicon for example.
  • the piezo-resistors 20, the interconnects 26, and the terminals 27 are formed by removing material in the semiconductor 21 layer down to the insulator layer 31.
  • the semiconductor 21 can be doped in n-type or p- type doping materials with a concentration up to the degeneration region (i.e., where a semiconductor stops acting as a semiconductor) of the semiconductor 21. With a high concentration of the n-type or p-type doping materials, a very low temperature coefficient for both the resistivity and the piezoresistive coefficient of the piezo-resistors 20 can be achieved.
  • the material in the layer of the semiconductor 21 can be removed down to the insulator layer 31 by known semiconductor circuit fabrication processes such as etching by chemicals or physical.
  • the senor 9 can be configured as a Hall sensor (i.e., a sensor that senses a changing or fluctuating magnetic field).
  • the sensor 9 can have magnetic particles embedded in the mono crystalline structure of the piezo-resistors 20. The magnetic particles will interact with the changing magnetic field in to mechanically deform the crystal lattice, and, thus change the conductivity of the piezo- resistors 20.
  • the senor 9 can be configured as a tilt sensor (i.e., a sensor that can measure a deviation in orientation with respect to earth gravity).
  • the sensor 9 can include a proof mass coupled to one or more of the piezo-resistors 20. As the sensor 9 tilts, the direction of gravity acting on the proof mass will change and mechanically deform the crystal lattice, and, thus change the conductivity of the one or more piezo-resistors 20.
  • the senor 9 can be configured to measure pressure.
  • the sensor 9 can include a diaphragm in communication with the pressure and coupled to one or more of the piezo-resistors 20. The pressure acting on the diaphragm will mechanically deform the crystal lattice, and, thus change the conductivity of the piezo-resistors 20.
  • the sensor 9 can be configured to be a contact sensor (i.e., a sensor that can sense contact with an object).
  • the sensor 9 can include a contact element coupled to one or more of the piezo-resistors 20 and configured to contact the object. Upon contacting the object, the contact element transfers a contact force to the crystal lattice to mechanically deform the crystal lattice, and, thus change the conductivity of the piezo-resistors 20.
  • the sensor 9 can be configured to measure vibrations.
  • the sensor 9 can include a proof mass coupled to one or more of the piezo-resistors 20.
  • FIG. 4 presents one example of a method 40 for measuring a downhole parameter.
  • the method 40 calls for (step 41) disposing a sensor in a borehole penetrating subsurface materials.
  • the sensor includes one or more piezo-resistors fabricated from a semiconductor on an insulator by removing or etching semiconductor material down to the insulator. At least one of the one or more piezo-resistors is configured to measure the downhole parameter and output a signal corresponding to the measured downhole parameter.
  • a plurality of piezo-resistors forms a network or bridge that outputs a signal corresponding to the measured downhole parameter.
  • the method 40 calls for (step 42) measuring the downhole parameter using the sensor.
  • the SOI wafer 30 may be a double-layer silicon on insulator material 50 as illustrated in FIG. 5.
  • the double-layer silicon on insulator (DL- SOI) material 50 improves the precision of manufacturing in order to improve the accuracy and precision for the sensor 9 by better defining the resonance frequency.
  • the etching of silicon may stop at the oxide layer when it is reached by dry etching.
  • the DL-SOI material 50 is used to fabricate the sensor 9 having a mass 51 and a spring 52 as illustrated in FIG. 5C.
  • Non- limiting examples of these types of sensors include the tilt sensor, the vibration sensor, and an accelerometer.
  • FIGS. 5A-5H depict aspects of fabrication of the sensor 9 having the mass 51 and the spring 52 from the DL-SOI wafer 50.
  • FIG. 5A illustrates the DL-SOI wafer 50 before semiconductor fabrication operations are applied to it.
  • FIG. 5B illustrates the wafer 50 having reduced contact resistance (p++), metallization of measuring bridge (front side), metallization of die attach by Ag-Sintering (back side), and Cr metallization for protection while etching.
  • FIG. 5C illustrates results of etching of the front side, realization of measuring bridge by etching of the resistors, and modeling of the mass 50 and the spring 51.
  • FIG. 5D illustrates results of oxid etching of the front side.
  • FIG. 5E illustrates results of etching of the front side to create the mass 51.
  • FIG. 5F illustrates results of etching the back side of the wafer 50 to define the size of the mass 51.
  • FIG. 5G illustrates results of etching without a mask, defining the size of the spring 52, and evacuation of the mass 51.
  • FIG. 5H illustrates of further oxid etching and Cr-etching for die attach.
  • various analysis components may be used, including a digital and/or an analog system.
  • the downhole electronics 12, the surface computer processing system 13, the constant current source 24, or the amplifier 25 may include the digital and/or analog system.
  • the system may have components such as a processor, storage media, memory, input, output, communications link (wired, wireless, pulsed mud, optical or other), user interfaces, software programs, signal processors (digital or analog) and other such components (such as resistors, capacitors, inductors and others) to provide for operation and analyses of the apparatus and methods disclosed herein in any of several manners well-appreciated in the art.
  • a power supply e.g., at least one of a generator, a remote supply and a battery
  • magnet, electromagnet, sensor, electrode, transmitter, receiver, transceiver, antenna, controller, optical unit, electrical unit or electromechanical unit may be included in support of the various aspects discussed herein or in support of other functions beyond this disclosure.
  • carrier means any device, device component, combination of devices, media and/or member that may be used to convey, house, support or otherwise facilitate the use of another device, device component, combination of devices, media and/or member.
  • Other exemplary non-limiting carriers include drill strings of the coiled tube type, of the jointed pipe type and any combination or portion thereof.
  • Other carrier examples include casing pipes, wirelines, wireline sondes, slickline sondes, drop shots, bottom-hole-assemblies, drill string inserts, modules, internal housings and substrate portions thereof.

Landscapes

  • Physics & Mathematics (AREA)
  • Mining & Mineral Resources (AREA)
  • Geology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Fluid Mechanics (AREA)
  • Environmental & Geological Engineering (AREA)
  • Geophysics (AREA)
  • General Physics & Mathematics (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Measuring Fluid Pressure (AREA)
  • Micromachines (AREA)

Abstract

La présente invention concerne un appareil pour mesurer un paramètre dans un forage pénétrant la terre. L'appareil comprend un capteur configuré pour être disposé dans le forage et ayant une piézorésisance fabriquée à partir d'un semi-conducteur sur un isolant, une partie du semi-conducteur étant attaquée jusqu'à l'isolant pour former la piézorésistance, la piézorésistance répondant au paramètre.
PCT/US2012/029467 2011-03-17 2012-03-16 Jauges de contrainte piézorésistives à haute température constituées de silicium sur isolant Ceased WO2012141843A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161453632P 2011-03-17 2011-03-17
US61/453,632 2011-03-17

Publications (2)

Publication Number Publication Date
WO2012141843A2 true WO2012141843A2 (fr) 2012-10-18
WO2012141843A3 WO2012141843A3 (fr) 2013-03-14

Family

ID=47009906

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2012/029467 Ceased WO2012141843A2 (fr) 2011-03-17 2012-03-16 Jauges de contrainte piézorésistives à haute température constituées de silicium sur isolant

Country Status (2)

Country Link
US (1) US20130068008A1 (fr)
WO (1) WO2012141843A2 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11231310B2 (en) 2016-11-23 2022-01-25 Tigmill Technologies, LLC Fluid level and composition sensor
US12467814B2 (en) 2020-10-15 2025-11-11 Schlumberger Technology Corporation Graphene-based electrical circuit fluid system component

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6651496B2 (en) * 2001-09-04 2003-11-25 Scientific Drilling International Inertially-stabilized magnetometer measuring apparatus for use in a borehole rotary environment
JP2006030159A (ja) * 2004-06-15 2006-02-02 Canon Inc ピエゾ抵抗型半導体装置及びその製造方法
US7540198B2 (en) * 2004-06-15 2009-06-02 Canon Kabushiki Kaisha Semiconductor device
JP2008008883A (ja) * 2006-06-02 2008-01-17 Denso Corp 磁気センサ及びセンサ
DE102007010913A1 (de) * 2007-03-05 2008-09-11 Endress + Hauser Gmbh + Co. Kg Drucksensor
JP5285874B2 (ja) * 2007-07-03 2013-09-11 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US7626377B2 (en) * 2008-02-18 2009-12-01 Honeywell International Inc. Hall-effect device with merged and/or non-merged complementary structure
US20100038135A1 (en) * 2008-08-14 2010-02-18 Baker Hughes Incorporated System and method for evaluation of structure-born sound
US8016050B2 (en) * 2008-11-03 2011-09-13 Baker Hughes Incorporated Methods and apparatuses for estimating drill bit cutting effectiveness
US7861597B2 (en) * 2008-11-14 2011-01-04 Kulite Semiconductor Products, Inc. High temperature transducer using SOI electronics
FR2941534B1 (fr) * 2009-01-26 2011-12-23 Commissariat Energie Atomique Capteur de champ magnetique a jauge de contrainte suspendue

Also Published As

Publication number Publication date
WO2012141843A3 (fr) 2013-03-14
US20130068008A1 (en) 2013-03-21

Similar Documents

Publication Publication Date Title
CN111655970B (zh) 用于定向钻井的连续轨迹计算
US9151153B2 (en) Crystal sensor made by ion implantation for sensing a property of interest within a borehole in the earth
US10768064B2 (en) MEMS pressure gauge sensor and manufacturing method
US11255740B2 (en) Pressure gauge chip and manufacturing process thereof
US8943884B2 (en) Smart seals and other elastomer systems for health and pressure monitoring
US12019198B2 (en) System and method to estimate a property in a borehole
EP3263832A1 (fr) Procédé et dispositif pour outil de fond de trou de positionnement de profondeur et journal de mesure associé d'un puits d'hydrocarbures
MX2014006922A (es) Sensor de presion de fluido y sonda de medicion.
EP3207215A1 (fr) Procédé et appareil de caractérisation de l'anisotropie élastique d'un schiste isotrope transverse non conventionnel
WO2013036156A1 (fr) Appareil et procédé d'estimation de limites géologiques
US20240247582A1 (en) Transducers including laser etched substrates
US20120304758A1 (en) Low-frequency viscosity, density, and viscoelasticity sensor for downhole applications
NL1042231A (en) Downhole cement strain gauge
US20130068008A1 (en) High temperature piezoresistive strain gauges made of silicon-on-insulator
US8943900B2 (en) Method and apparatus for differential pressure measurement
Zeng et al. MEMS pressure sensors for high-temperature high-pressure downhole applications
US10392923B2 (en) System and methodology for determining forces acting on components
US20170241260A1 (en) Method and apparatus for downhole measurements of velocity anisotropy on sidewall cores
AU2012384909B2 (en) System and method to improve accuracy of galvanic tool measurements
WO2017132287A1 (fr) Appareil de détection de tension de fond de trou
WO2011057058A2 (fr) Dispositifs insensibles à température et leurs procédés de fabrication
Mayer Analysis and Development of Algorithms for Identification and Classification of Dynamic Drillstring Dysfunctions

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12770565

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 12770565

Country of ref document: EP

Kind code of ref document: A2