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WO2012141535A3 - Composition d'encre semi-conductrice inorganique, et film mince semi-conducteur inorganique fabriqué avec celle-ci - Google Patents

Composition d'encre semi-conductrice inorganique, et film mince semi-conducteur inorganique fabriqué avec celle-ci Download PDF

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Publication number
WO2012141535A3
WO2012141535A3 PCT/KR2012/002831 KR2012002831W WO2012141535A3 WO 2012141535 A3 WO2012141535 A3 WO 2012141535A3 KR 2012002831 W KR2012002831 W KR 2012002831W WO 2012141535 A3 WO2012141535 A3 WO 2012141535A3
Authority
WO
WIPO (PCT)
Prior art keywords
inorganic semiconductor
thin film
zinc oxide
ink composition
inorganic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2012/002831
Other languages
English (en)
Korean (ko)
Other versions
WO2012141535A2 (fr
Inventor
조성윤
이창진
강영구
임종선
강영훈
정준영
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Korea Research Institute of Chemical Technology KRICT
Original Assignee
Korea Research Institute of Chemical Technology KRICT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Korea Research Institute of Chemical Technology KRICT filed Critical Korea Research Institute of Chemical Technology KRICT
Publication of WO2012141535A2 publication Critical patent/WO2012141535A2/fr
Publication of WO2012141535A3 publication Critical patent/WO2012141535A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02601—Nanoparticles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

La présente invention concerne une composition d'encre semi-conductrice inorganique, et un film mince semi-conducteur inorganique fabriqué avec celle-ci. En particulier, la composition d'encre semi-conductrice inorganique comprend une solution de précurseur d'oxyde de zinc, des nanoparticules d'oxyde de zinc et un solvant dispersant, et est caractérisée en ce que la quantité de nanoparticules d'oxyde de zinc représente 0,1 à 50 % en poids de la solution de précurseur d'oxyde de zinc. La composition d'encre semi-conductrice inorganique peut être utilisée comme matériau de canal d'un dispositif transistor, et un transistor à couches minces inorganiques avec des performances améliorées peut ainsi être obtenu. De plus, comme ladite composition est adéquatement appliquée dans un procédé liquide, la fabrication du film mince est facile, et un procédé à basse température est possible. Comme la solution de précurseur d'oxyde de zinc et les nanoparticules d'oxyde de zinc sont mélangées, un film mince compact et homogène peut être fabriqué. Par conséquent, un transistor à couches minces inorganiques très fiable peut être obtenu.
PCT/KR2012/002831 2011-04-15 2012-04-13 Composition d'encre semi-conductrice inorganique, et film mince semi-conducteur inorganique fabriqué avec celle-ci Ceased WO2012141535A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020110035119A KR101165717B1 (ko) 2011-04-15 2011-04-15 무기 반도체 잉크 조성물 및 이를 통해 제조되는 무기 반도체 박막
KR10-2011-0035119 2011-04-15

Publications (2)

Publication Number Publication Date
WO2012141535A2 WO2012141535A2 (fr) 2012-10-18
WO2012141535A3 true WO2012141535A3 (fr) 2012-12-13

Family

ID=46716836

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/002831 Ceased WO2012141535A2 (fr) 2011-04-15 2012-04-13 Composition d'encre semi-conductrice inorganique, et film mince semi-conducteur inorganique fabriqué avec celle-ci

Country Status (2)

Country Link
KR (1) KR101165717B1 (fr)
WO (1) WO2012141535A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2858099A4 (fr) * 2012-06-01 2015-05-20 Mitsubishi Chem Corp Procédé de production d'une couche semi-conductrice contenant de l'oxyde métallique et dispositif électronique
KR101365800B1 (ko) 2013-03-25 2014-02-20 부산대학교 산학협력단 인듐 아연 산화물 반도체 박막트랜지스터의 제조방법 및 이에 의해 제조된 인듐 아연 산화물 반도체 박막트랜지스터
CN103346264B (zh) * 2013-06-08 2015-08-26 苏州方昇光电装备技术有限公司 一种纳米氧化锌薄膜的制备方法以及一种有机太阳能电池的制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080033127A (ko) * 2006-10-12 2008-04-16 제록스 코포레이션 박막 트랜지스터
KR20080101734A (ko) * 2007-05-16 2008-11-21 제록스 코포레이션 박막 트랜지스터용 반도체 층
KR20090012782A (ko) * 2007-07-31 2009-02-04 삼성전자주식회사 산화아연 박막의 제조방법
KR20100011167A (ko) * 2008-07-24 2010-02-03 한국전자통신연구원 금속 산화물 나노입자의 제조방법, 이로부터 제조된 금속산화물 나노입자, 금속 산화물 박막의 제조방법, 금속산화물 박막을 포함하는 전자 소자

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080033127A (ko) * 2006-10-12 2008-04-16 제록스 코포레이션 박막 트랜지스터
KR20080101734A (ko) * 2007-05-16 2008-11-21 제록스 코포레이션 박막 트랜지스터용 반도체 층
KR20090012782A (ko) * 2007-07-31 2009-02-04 삼성전자주식회사 산화아연 박막의 제조방법
KR20100011167A (ko) * 2008-07-24 2010-02-03 한국전자통신연구원 금속 산화물 나노입자의 제조방법, 이로부터 제조된 금속산화물 나노입자, 금속 산화물 박막의 제조방법, 금속산화물 박막을 포함하는 전자 소자

Also Published As

Publication number Publication date
KR101165717B1 (ko) 2012-07-18
WO2012141535A2 (fr) 2012-10-18

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