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WO2012039434A1 - Composition de substance réfléchissante, réflecteur, et dispositif d'émission à semi-conducteur - Google Patents

Composition de substance réfléchissante, réflecteur, et dispositif d'émission à semi-conducteur Download PDF

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Publication number
WO2012039434A1
WO2012039434A1 PCT/JP2011/071512 JP2011071512W WO2012039434A1 WO 2012039434 A1 WO2012039434 A1 WO 2012039434A1 JP 2011071512 W JP2011071512 W JP 2011071512W WO 2012039434 A1 WO2012039434 A1 WO 2012039434A1
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WO
WIPO (PCT)
Prior art keywords
reflector
resin
particles
heat
composition according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2011/071512
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English (en)
Japanese (ja)
Inventor
俊之 坂井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Original Assignee
Dai Nippon Printing Co Ltd
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Filing date
Publication date
Priority claimed from JP2010214113A external-priority patent/JP2012069794A/ja
Priority claimed from JP2010242657A external-priority patent/JP5168337B2/ja
Application filed by Dai Nippon Printing Co Ltd filed Critical Dai Nippon Printing Co Ltd
Publication of WO2012039434A1 publication Critical patent/WO2012039434A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means

Definitions

  • the present invention relates to a reflector composition, a reflector using the reflector composition, and a semiconductor light emitting device.
  • An LED element which is one of semiconductor light emitting devices, is widely used as a light source for an indicator lamp or the like because it is small and has a long life and is excellent in power saving.
  • LED elements with higher brightness have been manufactured at a relatively low cost, and therefore, use as a light source to replace fluorescent lamps and incandescent bulbs has been studied.
  • a plurality of LED elements are arranged on a surface-mounted LED package, that is, a metal substrate (LED mounting substrate) such as aluminum, and each LED element.
  • a system is often used in which a reflector (reflector) that reflects light in a predetermined direction is disposed around the.
  • the LED element since the LED element generates heat at the time of light emission, in such a type of LED lighting device, a temperature increase at the time of light emission of the LED element leads to a decrease in luminance, a shortened life of the LED element, and the like. Accordingly, at least the reflector is required to have heat resistance, and preferably has a good heat dissipation.
  • Patent Document 1 it is reflected by a white thermosetting silicone resin composition containing a thermosetting organopolysiloxane, a white pigment, an inorganic filler (excluding a white pigment), a condensation catalyst, and a predetermined coupling agent.
  • An optical semiconductor case constituting a body has been proposed.
  • Patent Document 2 proposes a package molded body that enhances light reflection by coating a predetermined part with a coating member containing a specific thermosetting resin and an inorganic member.
  • the present invention uses a reflector composition that has a high reflection characteristic even with respect to ultraviolet light having a wavelength of 400 nm or less and can produce a reflector having high heat resistance, and the reflector composition. It is an object to provide a reflector and a semiconductor light emitting device.
  • the present invention is as follows.
  • a reflector composition comprising boron nitride particles or melamine cyanurate particles and a heat-resistant binder.
  • the reflective material composition according to [1] which contains substantially no titanium oxide.
  • the reflector composition according to any one of [1] to [3], wherein the boron nitride contained has a volume average particle size of 0.1 to 300 ⁇ m.
  • An optical semiconductor element and a reflector provided around the optical semiconductor element and reflecting light from the optical semiconductor element in a predetermined direction are provided on a substrate, and at least a light reflecting surface of the reflector
  • the present invention it is possible to produce a reflector having a high reflection characteristic even for ultraviolet light having a wavelength of 400 nm or less and having high heat resistance, and a reflection using the reflector composition. And a semiconductor light emitting device can be provided. Moreover, when boron nitride particles are used, it is possible to provide a reflector composition that can produce a reflector having high heat dissipation.
  • FIG. 1 It is a schematic sectional drawing which shows an example of the semiconductor light-emitting device of this invention. It is a schematic sectional drawing which shows an example of the semiconductor light-emitting device of this invention. It is a figure which shows the relationship between the light reflectivity and wavelength of the initial stage (immediately after preparation) of the molded object which consists of a reflector composition of Example A-1 and Comparative Example A-1, A-3. It is a figure which shows the relationship between the light reflectivity and wavelength of the initial stage (immediately after preparation) of the molded object which consists of a reflector composition of Example A-2 and Comparative example A-2, A-4.
  • FIG. 3 is a diagram showing the relationship between the light reflectance and the wavelength at the initial stage (immediately after production) of the molded articles made of the reflective material compositions of Comparative Examples B-1 to B-4.
  • FIG. 6 is a graph showing the relationship between the light reflectance and wavelength at the initial stage (immediately after production) of a molded article made of the reflective material composition of Comparative Examples B-5 to B-7.
  • the first reflecting material composition of the present invention comprises boron nitride particles and a heat-resistant binder. Due to the presence of boron nitride particles, the reflectance of ultraviolet light having a wavelength of 400 nm or less, more preferably, ultraviolet light having a wavelength in the range of 250 to 400 nm can be made high. And since the boron nitride particles are contained in the heat-resistant binder, the above characteristics can be maintained well even in a relatively high temperature use region. As a result, color rendering can be enhanced by applying to reflectors such as lighting fixtures and televisions. Further, since boron nitride particles themselves do not promote deterioration of the heat-resistant binder even at high temperatures, it is possible to suppress a decrease in the durability of the reflective material composition.
  • the boron nitride particles can be applied to any of hexagonal structure (h-BN), zinc blende structure (c-BN), wurtzite structure (w-BN), and rhombohedral structure (r-BN). From the viewpoints of heat resistance and cost, it is preferable to use scale-like boron nitride particles having a hexagonal structure.
  • the volume average particle size of the boron nitride particles is preferably from 0.1 to 300 ⁇ m, more preferably from 0.1 to 12 ⁇ m, and even more preferably from 1 to 2 ⁇ m from the viewpoint of heat dissipation and heat resistance. .
  • the said volume average particle diameter can be calculated
  • the content of the boron nitride particles is preferably 10 to 300 parts by mass, more preferably 15 to 200 parts by mass, and further preferably 20 to 200 parts by mass with respect to 100 parts by mass of the heat-resistant binder. preferable. In addition, as long as a moldability is not impaired, you may fill 300 parts or more.
  • the second reflective material composition of the present invention comprises melamine cyanurate particles and a heat-resistant binder. Due to the presence of melamine cyanurate particles, the reflectance of ultraviolet light having a wavelength of 400 nm or less, more preferably, ultraviolet light having a wavelength in the range of 250 to 400 nm can be made high. And, by including the melamine cyanurate particles in the heat-resistant binder, the above characteristics can be maintained well even in a relatively high temperature use region. As a result, color rendering can be enhanced by applying to reflectors such as lighting fixtures and televisions. Further, since the melamine cyanurate particles themselves do not promote deterioration of the heat-resistant binder even at high temperatures, it is possible to suppress a decrease in the durability of the reflector composition.
  • melamine cyanurate refers to a compound in which melamine molecules and cyanuric acid molecules are arranged in a plane by hydrogen bonds and represented by the chemical formula C 6 H 9 N 9 O 3. It is represented by a structural formula such as 1) or formula (2).
  • the production method of the melamine cyanurate particles is not particularly limited as long as it can be produced so as to have a specific particle diameter, and can be produced by a conventionally known method, for example, JP-A-5-310716. And JP-A-7-149739 and JP-A-7-224049.
  • melamine powder and cyanuric acid were charged at a predetermined mixing ratio into a device capable of mixing and stirring, and the temperature inside the tank was raised to a predetermined temperature while mixing. Then, when water is gradually added to the tank while stirring and neutralization reaction is performed, a white precipitate is generated, and the precipitate is filtered and dried and granulated.
  • grains of this is mentioned.
  • grains can also be obtained as a commercial item.
  • the average particle size of the melamine cyanurate particles is preferably 0.1 to 100 ⁇ m, more preferably 0.5 to 20 ⁇ m, and more preferably 0.5 to 4 ⁇ m from the viewpoint of production and reflection characteristics. Further preferred.
  • the said average particle diameter can be calculated
  • the content of melamine cyanurate particles is preferably 5 to 180 parts by mass, more preferably 10 to 150 parts by mass, and more preferably 5 to 110 parts by mass with respect to 100 parts by mass of the heat-resistant binder. More preferred is 10 to 100 parts by mass. In addition, as long as a moldability is not impaired, 200 parts or more may be filled.
  • the dispersibility is improved in the melamine cyanurate particles and boron nitride particles.
  • a hydrophobization treatment may be performed.
  • the hydrophobizing agent include silane coupling agents, silicone oils, fatty acids, and fatty acid metal salts.
  • a silane coupling agent and silicone oil are preferably used because they have a high effect of improving dispersibility.
  • silane coupling agent examples include disilazane such as hexamethyldisilazane; cyclic silazane; trimethylsilane, trimethylchlorosilane, dimethyldichlorosilane, methyltrichlorosilane, allyldimethylchlorosilane, benzyldimethylchlorosilane, methyltrimethoxysilane.
  • Methyltriethoxysilane isobutyltrimethoxysilane, dimethyldimethoxysilane, dimethyldiethoxysilane, trimethylmethoxysilane, hydroxypropyltrimethoxysilane, phenyltrimethoxysilane, n-butyltrimethoxysilane, n-hexadecyltrimethoxysilane, n-octadecyltrimethoxysilane, vinyltrimethoxysilane, vinyltriethoxysilane, ⁇ -methacryloxypropyltrimethoxysilane, Alkylsilane compounds such as vinyltriacetoxysilane; ⁇ -aminopropyltriethoxysilane, ⁇ - (2-aminoethyl) aminopropyltrimethoxysilane, ⁇ - (2-aminoethyl) aminopropylmethyldimethoxysilane, N-
  • silicone oil examples include dimethylpolysiloxane, methylhydrogenpolysiloxane, methylphenylpolysiloxane, and amino-modified silicone oil. These hydrophobizing agents can be used alone or in combination of two or more.
  • the method for hydrophobizing melamine cyanurate particles and boron nitride particles is not particularly limited as long as it is a conventionally known method, and examples thereof include a dry method and a wet method. Specifically, a dry method in which a hydrophobizing agent is dropped or sprayed while stirring melamine cyanurate particles and boron nitride particles at high speed; the hydrophobizing agent is dissolved in an organic solvent, and the organic solvent is stirred Examples thereof include a wet method in which melamine cyanurate particles and boron nitride particles are added.
  • the reflective material composition of the present invention does not substantially contain titanium oxide.
  • the reflectance of ultraviolet light of 400 nm or less can be made good.
  • substantially free of titanium oxide particles means that no titanium oxide material is blended during the production of the reflector composition, specifically, the content of titanium oxide in the reflector composition. Means 0 mass%.
  • the heat-resistant binder in the reflector composition of the present invention may be a resin having at least one of a glass transition temperature and a melting point after molding of 100 ° C. or higher, such as epoxy resin, acrylate resin, urethane resin, silicone resin, poly Heat of siloxane-organic block copolymer, polysiloxane-organic graft copolymer, organic-inorganic hybrid resin containing carbon-carbon double bond reactive with SiH group, cyanate ester resin, phenol resin, polyimide resin, bismaleimide resin, etc.
  • a resin having at least one of a glass transition temperature and a melting point after molding of 100 ° C. or higher such as epoxy resin, acrylate resin, urethane resin, silicone resin, poly Heat of siloxane-organic block copolymer, polysiloxane-organic graft copolymer, organic-inorganic hybrid resin containing carbon-carbon double bond reactive with SiH group, cyanate ester resin, phenol resin
  • curable resins acrylic resins, polycarbonate resins, norbornene derivatives, cycloolefin resins such as resins obtained by ring-opening metathesis polymerization of norbornene derivatives or hydrogenated products thereof, olefin-maleimide resins, polyester resins, polyesters, etc.
  • thermoplastic resin such as a fluororesin or a rubber-like resin
  • a silicone resin is preferable as the thermosetting resin
  • a norbornene polymer is preferable as the thermoplastic resin.
  • examples of the silicone resin include addition type silicone and condensation type silicone as curing types, and examples of the structure include dimethyl silicone and methylphenyl silicone.
  • the condensation type silicone is a thermosetting organopolysiloxane obtained by hydrolysis reaction of methyltrichlorosilane, methyltrimethoxysilane, methyltriethoxysilane, tetrachlorosilane, tetramethoxysilane, tetraethoxysilane or the like.
  • Examples of the norbornene polymer include a ring-opening polymer of a monomer having a norbornene structure, a ring-opening polymer of a monomer having a norbornene structure and another monomer, or a hydride thereof, a norbornene structure.
  • a ring-opening (co) polymer hydride of a monomer having a norbornene structure is particularly preferably used from the viewpoints of moldability, heat resistance, low hygroscopicity, dimensional stability, lightness, and the like. Can do.
  • the reflective material composition of the present invention can be prepared by mixing boron nitride particles and a heat-resistant binder, or mixing melamine cyanurate particles and a heat-resistant binder in a predetermined ratio as described above.
  • known means such as a two-roll or three-roll, a planetary stirring and deaerator, a stirrer such as a homogenizer, a dissolver and a planetary mixer, a melt kneader such as a polylab system and a lab plast mill, etc. Can be applied. These may be performed at normal temperature, cooling state, heating state, normal pressure, reduced pressure state, or pressurized state.
  • Various additives can be added as long as the effects of the present invention are not impaired.
  • various whisker, silicone powder, thermoplastic elastomer, organic synthetic rubber, fatty acid ester, glycerate ester, zinc stearate, calcium stearate and other additives such as internal mold release agents for the purpose of improving the properties of the resin composition Can be blended.
  • the reflective material composition of the present invention as described above can be applied to various uses as a composite material or a molded product of a reflective material composition applied and molded on a substrate.
  • it can be applied as a light reflecting sheet for solar cells, a reflector for LEDs and other light sources for televisions, and light sources for televisions.
  • the reflector of the present invention is formed by molding the above-described reflector composition of the present invention.
  • the reflector may be used in combination with a semiconductor light-emitting device described later, or may be used in combination with a semiconductor light-emitting device (LED mounting substrate) made of another material.
  • the reflector of the present invention mainly has an action of reflecting light from the LED element of the semiconductor light emitting device toward the lens (light emitting portion).
  • the details of the reflector are the same as those of the reflector (reflector 12 described later) applied to the semiconductor light emitting device of the present invention, and are omitted here.
  • the semiconductor light emitting device of the present invention is provided around an optical semiconductor element (for example, an LED element) 10 and the optical semiconductor element 10, and reflects light from the optical semiconductor element 10 in a predetermined direction.
  • the reflecting body 12 is provided on the substrate 14. And at least one part (all in the case of FIG. 1) of the light reflection surface of the reflector 12 is comprised with the molded object of the reflector composition of this invention as stated above.
  • the optical semiconductor element 10 emits radiated light (generally UV or blue light in a white light LED), for example, an active layer made of AlGaAs, AlGaInP, GaP or GaN sandwiched between n-type and p-type cladding layers. It is a semiconductor chip (light emitter) having a double heterostructure, and has a hexahedral shape with a side length of about 0.5 mm, for example. In the case of wire bonding mounting, it is connected to an electrode (connection terminal) (not shown) via a lead wire 16.
  • radiated light generally UV or blue light in a white light LED
  • an active layer made of AlGaAs, AlGaInP, GaP or GaN sandwiched between n-type and p-type cladding layers.
  • It is a semiconductor chip (light emitter) having a double heterostructure, and has a hexahedral shape with a side length of about 0.5 mm, for example.
  • wire bonding mounting
  • the shape of the reflector 12 conforms to the shape of the end portion (joint portion) of the lens 18 and is usually a cylindrical shape such as a square shape, a circular shape, an elliptic shape, or a ring shape.
  • the reflector 12 is a cylindrical body (annular body), and all end surfaces of the reflector 12 are in contact with and fixed to the surface of the substrate 14.
  • the inner surface of the reflector 12 may be expanded upward in a tapered shape (see FIG. 1).
  • the reflector 12 can also function as a lens holder when the end portion on the lens 18 side is processed into a shape corresponding to the shape of the lens 18.
  • the reflector 12 may have only the light reflecting surface side as a light reflecting layer 12a made of the reflecting material composition of the present invention.
  • the thickness of the light reflection layer 12a is preferably 500 ⁇ m or less, and more preferably 300 ⁇ m or less, from the viewpoint of reducing the thermal resistance.
  • the member 12b on which the light reflecting layer 12a is formed can be made of a known heat resistant resin.
  • the lens 18 is provided on the reflector 12, but this is usually made of resin, and various structures may be adopted and colored depending on the purpose and application.
  • the space formed by the substrate 14, the reflector 12, and the lens 18 may be a transparent sealing portion, or may be a gap if necessary.
  • This space portion is usually a transparent sealing portion filled with a light-transmitting and insulating material, and the force applied by directly contacting the lead wire 16 in wire bonding mounting and indirectly. Prevents electrical defects caused by the lead wire 16 being disconnected, cut, or short-circuited from the connection portion with the optical semiconductor element 10 and / or the connection portion with the electrode due to applied vibration, impact, etc. can do.
  • the optical semiconductor element 10 can be protected from moisture, dust, etc., and the reliability can be maintained over a long period of time.
  • Examples of the material (transparent sealant composition) that imparts translucency and insulation usually include silicone resins, epoxy silicone resins, epoxy resins, acrylic resins, polyimide resins, polycarbonate resins, and the like. Of these, silicone resins are preferred from the viewpoints of heat resistance, weather resistance, low shrinkage, and discoloration resistance.
  • the reflector 12 having a predetermined shape is molded from the reflector resin composition of the present invention by transfer molding, compression molding, injection molding or the like using a mold having a cavity space having a predetermined shape.
  • the separately prepared optical semiconductor element 10, electrodes and lead wires 16 are fixed to the substrate 14 with an adhesive or a bonding member, and further fixed to the reflector 12 on the substrate 14.
  • a transparent sealant composition containing a silicone resin or the like is poured into the recess formed by the substrate 14 and the reflector 12, and cured by heating, drying, or the like to form a transparent sealing portion.
  • the lens 18 is disposed on the transparent sealing portion to obtain the semiconductor light emitting device shown in FIG.
  • the composition may be cured.
  • Example A Heat-resistant binder / thermosetting resin: silicone resin (OE-6336A and OE-6336B mixed at a mass ratio of 1: 1: both manufactured by Toray Dow Corning Co., Ltd.) -Thermoplastic resin: norbornene polymer (ZEONOR 1600: manufactured by Nippon Zeon Co., Ltd.)
  • Boron nitride particles A UHP-2 (scale-shaped hexagonal crystal structure, volume average particle diameter 11.8 ⁇ m, Showa Denko KK) (3) Titanium oxide particles: PFC-107 (Ishihara Sangyo Co., Ltd. Rutile structure Volume average particle size 0.25 ⁇ m) (4) Magnesium oxide particles: manufactured by Wako Pure Chemical Industries, Ltd.
  • Boron nitride particles B UHP-EX (manufactured by Showa Denko KK, granular hexagonal crystal structure, volume average particle size 50 ⁇ m)
  • Boron nitride particles C UHP-S1 (manufactured by Showa Denko KK, scaly hexagonal crystal structure, volume average particle size 1.5 ⁇ m)
  • Examples 1 to 11, Comparative Examples 1 to 5 In the formulation shown in Table 1, a heat-resistant binder and various particles were blended and kneaded to obtain a reflector composition. In the blending, the volume fraction of various particles was adjusted to be constant, and kneading was performed with a roll.
  • thermosetting resin when thermosetting resin is blended, 150 ° C., 60 seconds, 10 MPa, and when blending thermoplastic resin, conditions of 230 ° C., 10 seconds, 20 MPa are 750 mm ⁇ 750 mm ⁇
  • the molded body was produced by press molding to a thickness of 1 mm. The following characteristics were measured for this molded body. The results are shown in Tables 1 to 4 below.
  • the reflective material compositions of Examples 1 to 11 have a high reflectance in the region of 250 to 780 nm in both cases of the thermosetting resin and the thermoplastic resin, and particularly good in the ultraviolet region. It was confirmed that it had reflection characteristics. Moreover, it has also confirmed that it was a reflecting material composition holding favorable heat resistance. From Table 2, it was confirmed that the content of boron nitride particles was useful at 15 to 200 parts by mass. From Table 3, it was confirmed that this effect was due to boron nitride particles, and that the reflectance was good when the volume average particle diameter was 1 to 2 ⁇ m. Moreover, it has also confirmed from Table 4 that a reflector composition with high thermal conductivity was obtained by containing boron nitride particles. From the above, it can be said that the reflective material composition of the present invention is useful as a reflector that also reflects ultraviolet rays and a reflective material for semiconductor light emitting devices.
  • Example B Heat-resistant binder / thermosetting resin: silicone resin (OE-6336A and OE-6336B mixed at a mass ratio of 1: 1: both manufactured by Toray Dow Corning Co., Ltd.) -Thermoplastic resin: norbornene polymer (ZEONOR 1600: manufactured by Nippon Zeon Co., Ltd.)
  • Zinc oxide particles LP-ZINC2 (manufactured by Sakai Chemical Industry Co., Ltd., average particle size 2 ⁇ m) (6) Magnesium oxide particles: Magnesium oxide (Wako Pure Chemical Industries, Ltd., average particle size 0.2 ⁇ m) (7) Magnesium hydroxide particles: Magseeds N-6 (manufactured by Kamishima Chemical Co., Ltd., average particle size 1.1 ⁇ m) (8) Calcium carbonate particles: WS-2200 (manufactured by Takehara Chemical Co., Ltd., average particle size 1.3 ⁇ m) (9) Talc particles: Hi-micron HE5 (manufactured by Takehara Chemical Co., Ltd., average particle size 1.6 ⁇ m) (10) Barium sulfate particles: Barium sulfate W-1 (manufactured by Takehara Chemical Co., Ltd., average particle size 1.5 ⁇ m)
  • Examples 1 to 9, Comparative Examples 1 to 14 In the formulations shown in Tables 5 to 7, a heat-resistant binder and various particles were blended and kneaded to obtain a reflector composition. In the blending, the volume fraction of various particles was adjusted to be constant, and kneading was performed with a roll.
  • thermosetting resin when thermosetting resin is blended, 150 ° C., 60 seconds, 10 MPa, and when blending thermoplastic resin, conditions of 230 ° C., 10 seconds, 20 MPa are 750 mm ⁇ 750 mm ⁇
  • the molded body was produced by press molding to a thickness of 1 mm. The following characteristics were measured for this molded body. The results are shown in Tables 5 to 7 below.
  • (B) Light reflectance The light reflectance at a wavelength of 230 to 780 nm of the molded body (before and after standing at 150 ° C. for 24 hours) was measured using a spectrophotometer UV-2550 (manufactured by Shimadzu Corporation). Tables 5 to 7 show the results when the wavelength is 450 nm and the wavelength is 380 nm.
  • FIG. 5 shows the relationship between the light reflectance and wavelength of the molded bodies of Examples 1 and 2
  • FIG. 6 shows the relationship between the light reflectance and wavelength of the molded bodies of Comparative Examples 1 to 4.
  • FIG. 7 shows the relationship between the light reflectance and the wavelength of the molded products of 5 to 7 (all before being allowed to stand at 150 ° C. for 24 hours).

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Abstract

Selon l'invention, on a disposé sur un substrat: une composition de substance réfléchissante contenant des particules de nitrure de bore ou des particules de cyanurate de mélamine, et un liant thermorésistant; un réflecteur obtenu par moulage de la composition de substance réfléchissante; des éléments semi-conducteurs optiques; et des réflecteurs qui entourent les éléments semi-conducteurs optiques et réfléchissent, dans une direction spécifiée, la lumière provenant des éléments semi-conducteurs optiques. Dans ce dispositif d'émission à semi-conducteur, une partie au moins des surfaces photoréfléchissantes des réflecteurs est constituée d'un matériau moulé réalisé dans la composition de substance réfléchissante.
PCT/JP2011/071512 2010-09-24 2011-09-21 Composition de substance réfléchissante, réflecteur, et dispositif d'émission à semi-conducteur Ceased WO2012039434A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2010214113A JP2012069794A (ja) 2010-09-24 2010-09-24 反射材組成物、反射体及び半導体発光装置
JP2010-214113 2010-09-24
JP2010-242657 2010-10-28
JP2010242657A JP5168337B2 (ja) 2010-10-28 2010-10-28 反射材組成物、反射体及び半導体発光装置

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Cited By (3)

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JP2013232532A (ja) * 2012-04-27 2013-11-14 Dainippon Printing Co Ltd 光反射積層体及び半導体発光装置
JP2014148609A (ja) * 2013-02-01 2014-08-21 Shin Etsu Chem Co Ltd 光反射材料用硬化性樹脂組成物、該組成物の硬化物、該組成物の硬化物からなるリフレクター及びこれを用いた光半導体デバイス
WO2014195148A1 (fr) * 2013-06-06 2014-12-11 Koninklijke Philips N.V. Composition réfléchissante

Families Citing this family (1)

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Publication number Priority date Publication date Assignee Title
CN107112400A (zh) * 2014-10-27 2017-08-29 汉高股份有限及两合公司 制造光学半导体装置的方法及用于该方法的有机硅树脂组合物

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