WO2012035762A1 - 発光装置とled電球 - Google Patents
発光装置とled電球 Download PDFInfo
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- WO2012035762A1 WO2012035762A1 PCT/JP2011/005160 JP2011005160W WO2012035762A1 WO 2012035762 A1 WO2012035762 A1 WO 2012035762A1 JP 2011005160 W JP2011005160 W JP 2011005160W WO 2012035762 A1 WO2012035762 A1 WO 2012035762A1
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- Prior art keywords
- led
- phosphor
- light
- chip
- emitting device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
- H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8515—Wavelength conversion means not being in contact with the bodies
Definitions
- Embodiments of the present invention relate to a light emitting device and an LED bulb.
- LEDs light emitting diodes
- white LED lamps that combine LEDs and phosphors are attracting attention as alternatives to lighting fixtures that use incandescent bulbs or fluorescent lamps, and their development is rapidly progressing.
- an LED light bulb for example, an LED module having a plurality of LED chips arranged in a matrix is installed in a globe attached to a base portion having a light bulb base.
- an LED light bulb for example, an LED module having a plurality of LED chips arranged in a matrix is installed in a globe attached to a base portion having a light bulb base.
- an LED light bulb for example, an LED module having a plurality of LED chips arranged in a matrix is installed in a globe attached to a base portion having a light bulb base.
- an LED module having a plurality of LED chips arranged in a matrix is installed in a globe attached to a base portion having a light bulb base.
- one having an integrated structure in which an LED chip lighting circuit is provided in a base portion is known.
- a white LED lamp a combination of a blue light emitting LED chip (blue LED) and a yellow phosphor (YAG phosphor, etc.), an ultraviolet to purple LED chip (ultraviolet to purple LED), a red phosphor, green to A combination of a yellow phosphor and a mixed phosphor (BGR or BYR phosphor) of a red phosphor is applied.
- a white LED lamp in which a blue LED and a yellow phosphor are combined has a feature that it is easy to ensure brightness.
- a white LED lamp in which an ultraviolet to purple LED and a BGR or BYR phosphor are combined has a feature that the color rendering properties evaluated by the average color rendering index (Ra) are excellent.
- a white LED lamp When using a white LED lamp as a substitute for a lighting fixture using an incandescent bulb or a fluorescent lamp, it is required to have a size equivalent to that of an existing lighting fixture. Since the external shape of the white LED lamp used as the lighting fixture is limited, the shape of the LED module including the LED chip that is the excitation source of the phosphor is also limited. In a white LED lamp in which a blue LED and a yellow phosphor are combined, it is common to arrange LED chips at a high density in order to reduce the size of the LED module and increase the amount of light. In a white LED lamp in which an ultraviolet or purple LED and a BGR or BYR phosphor are combined, a sufficient amount of light may not be obtained depending on the LED chip arrangement shape, sealing structure, and the like. For this reason, there is a need for a white LED lamp with an increased amount of light while satisfying the shape constraints of a white LED lamp used as a lighting fixture.
- the problem to be solved by the present invention is to provide a light-emitting device that can increase the amount of light while satisfying the geometrical restrictions of various lighting devices in a light-emitting device that combines an ultraviolet or purple LED and a phosphor. There is to do.
- the light emitting device of the embodiment includes an LED module and a cover member that covers the LED module.
- the LED module includes four or more ultraviolet to purple LED chips disposed on a substrate.
- a fluorescent film that absorbs ultraviolet or violet light emitted from the LED chip and emits visible light is provided along the cover member so as to be separated from the LED chip.
- Each of the four or more LED chips has a square or rectangular shape. The distance from the center of one LED chip to the center of another LED chip that is closest to the center is P, the length of one side when the LED chip shape is square, or the long side and the short side when the LED chip is rectangular. When the average value of the side is L, four or more LED chips are arranged in a matrix so as to satisfy the condition of 2.6L ⁇ P ⁇ 10L.
- FIG. 6 It is a top view which shows the light-emitting device by 1st Embodiment. It is sectional drawing of the light-emitting device shown in FIG. It is a top view which shows the light-emitting device by 2nd Embodiment. It is sectional drawing of the light-emitting device shown in FIG. It is a top view which shows the LED module in the light-emitting device of embodiment. It is a top view which shows the LED light bulb by 3rd Embodiment. It is a figure which shows the LED light bulb shown in FIG. 6 in a partial cross section.
- FIGS. 3 and 4 are diagrams showing a light emitting device according to the second embodiment.
- the light emitting device 1 shown in these drawings includes an LED module 4 having a plurality of ultraviolet to purple LED chips 3 arranged on a substrate 2 and a cover installed on the substrate 2 so as to cover the LED chips 3. And a member 5.
- Specific examples of the light emitting device 1 include an LED bulb, which will be described in detail later, but are not limited thereto.
- the light emitting device 1 constitutes various lighting devices such as a substitute for a lighting fixture using a fluorescent lamp.
- LEDs 3 are mounted on the substrate 2 constituting the LED module 4.
- a light emitting diode such as InGaN, GaN, or AlGaN is used.
- Ultraviolet or violet light emitted from the LED chip 3 is converted into visible light by the fluorescent film 6 provided along the cover member 5. That is, a fluorescent film 6 that absorbs ultraviolet or violet light emitted from the LED chip 3 and emits visible light is provided on the inner surface of the cover member 5 so as to be separated from the LED chip 3.
- the fluorescent film 6 may be provided on the outer surface of the cover member 5 or in the cover member 5.
- the fluorescent film 6 emits white light, but is not necessarily limited thereto, and may emit various colors of visible light (eg, red light to blue light).
- the emission color of the phosphor film 6 is determined by the type of phosphor.
- the phosphor film 6 contains a mixed phosphor (BGR or BYR phosphor) including a blue phosphor, a green to yellow phosphor, and a red phosphor. It is preferable.
- the mixed phosphor may further include at least one phosphor selected from a blue-green phosphor and a deep red phosphor, or a phosphor having another emission color.
- Each phosphor constituting the above-described BGR or BYR phosphor, and a blue-green phosphor and a deep red phosphor to be added as necessary are combined with ultraviolet to violet light from the LED chip 3 and obtained white It is preferable to use the following phosphors from the viewpoint of color temperature of light, color rendering properties (average color rendering index Ra, etc.), and the like.
- the blue phosphor a phosphor having an emission peak wavelength in the range of 430 to 460 nm is used.
- a europium (Eu) activated alkaline earth chlorophosphate phosphor having a composition represented by the formula (1) is used. It is preferable to use it.
- a phosphor having an emission peak wavelength in the range of 490 to 580 nm is used.
- europium (Eu) and manganese (Mn) activated alkaline earth having a composition represented by the formula (2) Aluminate phosphors, europium (Eu) and manganese (Mn) activated alkaline earth silicate phosphors having the composition represented by formula (3), cerium having the composition represented by formula (4) Ce) activated rare earth aluminate phosphor, europium (Eu) activated sialon phosphor having a composition represented by formula (5), and europium (Eu) activated having a composition represented by formula (6) It is preferable to use at least one selected from sialon phosphors.
- a phosphor having an emission peak wavelength in the range of 580 to 630 nm is used.
- a europium (Eu) activated lanthanum oxysulfide phosphor having a composition represented by the formula (7) a formula (8 ) Europium (Eu) and bismuth (Bi) activated yttrium oxide phosphors having the composition represented by formula (9), europium (Eu) activated couun phosphor having the composition represented by formula (9), and formula (10)
- a phosphor having a light emission peak wavelength in the range of 460 to 490 nm is used.
- Eu europium
- Mn manganese
- a silicate phosphor is preferable to use a silicate phosphor.
- a phosphor having an emission peak wavelength in the range of 630 to 780 nm is used.
- a manganese (Mn) -activated magnesium fluorogermanate phosphor having a composition represented by the formula (12) is used. It is preferable to use it.
- the ratio of each phosphor constituting the mixed phosphor is appropriately set according to the emission color of the light emitting device 1 and the like.
- the mixed phosphor is a blue phosphor in the range of 10 to 60% by mass, a blue-green phosphor in the range of 0 to 10% by mass, a green to yellow phosphor in the range of 1 to 30% by mass, and 30 to 90% by mass.
- the red phosphor in the range and the deep red phosphor in the range of 0 to 35% by mass are preferably contained so that the total amount of each phosphor is 100% by mass. According to the mixed phosphor, a wide range of white light having a correlated color temperature of 6500K to 2500K can be obtained with the same fluorescent species.
- the phosphor film 6 is formed, for example, by mixing a mixed phosphor powder with a binder resin or the like, applying the mixture (for example, slurry) to the inner surface of the cover member 5 and then heating and curing the mixture.
- the LED chip 3 emitting ultraviolet to purple light is used as an excitation source for the fluorescent film 6, it is preferable to suppress leakage of ultraviolet rays from the cover member 5.
- the thickness of the fluorescent film 6 is preferably in the range of 80 to 800 ⁇ m. Thereby, the amount of ultraviolet rays (energy amount of ultraviolet rays) leaking from the cover member 5 can be reduced to, for example, 0.3 mW / nm / lm or less.
- the film thickness of the fluorescent film 6 is more preferably in the range of 150 to 600 ⁇ m.
- the cover member 5 has a dome shape as shown in FIGS. However, the shape of the cover member 5 is not limited to this, and various shapes can be applied according to the structure and application of the light emitting device 1.
- the cover member 5 is preferably formed of a material having a transparent or white body color with a visible light transmittance of 85% or more, such as glass or resin. As a result, white light emitted from the fluorescent film 6 can be efficiently extracted outside the apparatus.
- the cover member 5 may include a material that absorbs ultraviolet to violet light (mainly ultraviolet light), and a layer that absorbs ultraviolet to violet light may be provided between the cover member 5 and the fluorescent film 6. .
- the LED chip 3 may be any LED of ultraviolet to violet emission type (emission peak wavelength is 360 to 440 nm). In particular, it is preferable to use the LED chip 3 having an emission peak wavelength in the range of 370 to 415 nm and a half width of the emission spectrum of 10 to 15 nm.
- the LED chip 3 has a square or rectangular shape.
- the four or more LED chips 3 are not arranged in a straight line, but are arranged in a matrix so as to form a plurality of rows. Examples of the arrangement pattern of the LED chips 3 include a lattice shape and a staggered lattice shape.
- the LED chips 3 are arranged on the substrate 2 in a grid of 2 columns and 2 rows.
- a wiring pattern 7 is provided on the substrate 2 so that four or more LED chips 3 constitute a series-parallel circuit.
- the wiring pattern 7 has the 1st pattern part 7a which connects the LED chip 3 in series, and the 2nd pattern 7b which connects the 1st pattern part 7a of several rows in parallel.
- the electrodes of the LED chip 3 arranged in a grid are connected in series via the first pattern portion 7a of the wiring pattern 7 and a metal wire (bonding wire) 8 such as an Au wire.
- a plurality of columns of LED chips 3 connected in series are formed on the substrate 2.
- Each column of the LED chips 3 connected in series is connected in parallel by the second pattern portion 7b, and constitutes a series-parallel circuit.
- the series number (column number) and the parallel number (row number) of the LED chips 3 constituting the series-parallel circuit are not particularly limited, and are appropriately set depending on the size of the substrate 2 and the size of the light emitting device 1. Is.
- the LED chip 3 has a risk that the internal quantum efficiency is lowered by Joule heat generated during driving, and the light output is lowered.
- the substrate 2 on which the LED chip 3 is mounted is made of a material having high thermal conductivity. It is preferable to configure.
- the substrate 2 is exposed to ultraviolet or violet light emitted from the LED chip 3, it is preferable that the substrate 2 is made of a material that does not change color even when exposed to ultraviolet or violet light for a long time. Examples of the constituent material of the substrate 2 that satisfies such conditions include a ceramic material and a metal material.
- the ceramic member constituting the substrate 2 it is preferable to use a silicon carbide sintered body, a silicon nitride sintered body, an aluminum nitride sintered body, an alumina sintered body, or the like.
- the metal member constituting the substrate 2 it is preferable to use an aluminum plate, a copper plate, or the like.
- an insulating layer is formed on the surface of the substrate (metal substrate) 2 and a wiring pattern 7 is formed thereon.
- the insulating layer formed on the surface of the metal substrate is also preferably made of an insulating material having resistance to ultraviolet or violet light.
- an insulating layer examples include a surface layer or a surface treatment layer made of an inorganic substance such as ceramics or glass, and a resin layer made of silicone resin, fluorine-based resin, acrylic resin, cyclic olefin copolymer, polypropylene, or the like.
- a constituent material of the substrate 2 it is desirable to use an alumina sintered body from the viewpoints of resistance to ultraviolet to violet light, insulation, reflectance, cost, and the like.
- the fluorescent film 6 is provided on the entire inner surface of the cover member 5 so as to be separated from the LED chip 3. Accordingly, since the entire fluorescent film 6 provided on the inner surface of the cover member 5 emits light, the light amount of the light emitting device 1 can be improved. In order to effectively emit the entire fluorescent film 6 provided on the inner surface of the cover member 5 as described above, it is necessary to efficiently make ultraviolet or purple light emitted from the plurality of LED chips 3 reach the entire fluorescent film 6 efficiently. There is.
- the plurality of LED chips 3 has a distance P from the center of one LED chip 3 to the center of the other LED chip 3 and the shape of the LED chip 3 is square.
- L the length of one side, or in the case of a rectangle, when the average value of the long side and the short side ((long side + short side) / 2) is L, the condition of 2.6L ⁇ P ⁇ 10L is satisfied. Arranged to satisfy. As shown in FIG.
- the chip interval P1 and the chip The plurality of LED chips 3 are arranged on the substrate 2 so that the interval P2 satisfies the condition of 2.6L ⁇ P (P1, P2) ⁇ 10L.
- the ultraviolet to violet light emitted from the plurality of LED chips 3 can efficiently reach the entire fluorescent film 6 provided on the inner surface of the cover member 5. Therefore, the entire fluorescent film 6 can be effectively surface-emitted, so that the light amount of the light emitting device 1 can be improved. If any one of the chip intervals P1 and P2 of the LED chip 3 is less than 2.6L, the light interference between the adjacent LED chips 3 increases, so that the light emission efficiency of the fluorescent film 6 decreases.
- the light quantity of the fluorescent film 6 is such that the chip intervals P1 and P2 are 2.6L ⁇ P (P1, P2) ⁇ 10L. It is equivalent to the case of satisfying, and no further improvement in the amount of light can be expected.
- increasing the chip spacing P1, P2 leads to an increase in the size of the substrate 2 on which the LED chip 3 is arranged. For this reason, the manufacturing cost of the LED module 4 increases, or the risk of not satisfying the geometric constraints of the light emitting device 1 used as a lighting fixture or the like increases. This becomes a factor of reducing the practicality of the light emitting device 1 used as an alternative to a lighting fixture using an incandescent bulb or a fluorescent lamp.
- the substrate 2 can be increased in size. While suppressing, the luminous efficiency of the fluorescent film 6 can be improved.
- the LED chip 3 disposed on the substrate 2 is preferably covered with a transparent resin layer 9.
- a transparent resin layer 9 for example, a silicone resin or an epoxy resin is used, and it is particularly preferable to use a silicone resin having excellent ultraviolet resistance.
- the transparent resin layer 9 seals the LED chips 3 in each row in a straight line as shown in FIGS. 1 and 2, for example, or separates each LED chip 3 as shown in FIGS. It is preferable to seal.
- each LED chip 3 When only the extraction efficiency of ultraviolet or violet light is considered, it is preferable to individually seal each LED chip 3 as shown in FIGS. However, depending on the chip spacing of the LED chips 3, it may be difficult to individually seal the LED chips 3, and the manufacturing cost may increase. In such a case, as shown in FIGS. 1 and 2, it is preferable to seal a plurality of LED chips 3 linearly. 1 and 2, each row of LED chips 3 is sealed with a transparent resin layer 9 formed in a straight line. According to such a transparent resin layer 9, it is possible to increase the extraction efficiency of ultraviolet or violet light as compared with the case where the LED chips 3 arranged in a matrix are collectively sealed.
- the chip interval P1 and the chip interval P2 of the plurality (four or more) of LED chips 3 arranged on the substrate 2 satisfy the condition of 2.6L ⁇ P (P1, P2) ⁇ 10L,
- the LED module 4 in which two or more LED chips 3 are linearly sealed with the transparent resin layer 9 or each LED chip 3 is individually sealed, while suppressing the enlargement of the substrate 2,
- the luminous efficiency of the fluorescent film 6 can be improved. Therefore, by using such an LED module 4, the light emitting device 1 having an increased amount of light while satisfying the geometric restrictions as a substitute for a lighting fixture using a conventional incandescent bulb or fluorescent lamp is provided. It becomes possible.
- the entire fluorescent film 6 provided on the inner surface of the cover member 5 is surface-emitting, light emission such as white light spreads from the fluorescent film 6 in all directions. And since light emission is obtained only by the light emission from the fluorescent film 6, local brightness unevenness etc. can be suppressed. As a result, uniform and soft white light can be obtained without glare. That is, the glare of the light emitting device 1 can be greatly reduced.
- the fluorescent film 6 can be made of various phosphors, so that the color rendering property of white light can be improved. Specifically, white light having a correlated color temperature of 6500 K or less and an average color rendering index Ra of 85 or more can be easily obtained.
- the light distribution angle of the light emitting device 1 can be increased, and a decrease in luminance with time due to a temperature rise of the fluorescent film 6 is suppressed. It becomes possible. That is, since white light or the like is diffused from the entire surface of the fluorescent film 6 to the surroundings, the spread of the white light or the like to the back of the apparatus is increased. Therefore, the light distribution angle of the light emitting device 1 can be increased more effectively. Furthermore, by providing the fluorescent film 6 on the inner surface of the cover member 5 so as to be separated from the LED chip 3, even when the temperature of the LED chip 3 rises, the temperature rise of the fluorescent film 6 can be suppressed. Accordingly, it is possible to suppress a decrease in luminance over time while the light emitting device 1 is turned on.
- the LED bulb 11 shown in these drawings includes an LED module 12, a base portion 13 on which the LED module 12 is installed, a globe 14 attached on the base portion 13 so as to cover the LED module 12, and the base portion 13.
- a base (not shown) attached to the lower end portion via an insulating member or the like, and a lighting circuit (not shown) provided in the base portion 13 are provided.
- the LED module 12 includes a plurality of ultraviolet or purple LED chips 3 mounted on the substrate 2 in the same manner as the light emitting device 1 of the first and second embodiments described above.
- the plurality of LED chips 3 are arranged in a grid pattern on the substrate 2 as described above.
- the arrangement shape and arrangement interval of the LED chip 3 are the same as those in the first and second embodiments described above.
- a wiring (not shown) is drawn out on the side surface or bottom surface of the LED module 12, and this wiring is electrically connected to a lighting circuit (not shown) provided in the base body 3.
- the LED chip 3 is lit by a DC voltage applied through a lighting circuit.
- the LED module 12 is installed on a base portion 13 having a lighting circuit (not shown) and a base connected thereto.
- a lighting circuit not shown
- a base When the LED module 12 is installed on the base portion 13, when the substrate 2 is made of a low toughness material such as an alumina sintered body, an attachment means capable of suppressing chipping or cracking of the substrate 2 is applied. Is preferred.
- the screws and inclusions are preferably formed of a resin material having resistance to ultraviolet or violet light, such as silicone resin, fluorine resin, acrylic resin, cyclic olefin copolymer, and polypropylene.
- the globe 14 On the inner surface of the globe 14, there is provided a fluorescent film 15 that absorbs ultraviolet or violet light emitted from the LED chip 3 and emits white light.
- the phosphor constituting the phosphor film 15 is the same as in the first and second embodiments described above, and is selected so as to obtain desired white light.
- the fluorescent film 15 can obtain white light or the like only by light emission therefrom (not including light emitted from the LED chip 3).
- the globe 14 has a dome shape as shown in FIGS. 6 and 7, but is not limited to this, and may have an eggplant shape or the like.
- the globe 14 is preferably formed of the same material as that for forming the cover member 5 described above.
- the globe 14 has a size equivalent to, for example, an incandescent bulb.
- the fluorescent film 15 in the LED bulb 11 of this embodiment is provided on the inner surface of the globe 14 so as to be separated from the LED chip 3. Further, as described above, the LED chip 3 constituting the LED module 12 has a condition of 2.6L ⁇ P ⁇ 10L on the substrate 2 (P is the other LED existing at the closest position from the center of one LED chip 3). The distance to the center of the chip 3, L is the length of one side when the shape of the LED chip 3 is square, or the average value of the long side and the short side ((long side + short side) / 2 when the shape of the LED chip 3 is rectangular. ))). Further, the plurality of LED chips 3 are sealed with the same sealing resin layer 9 as in the first and second embodiments described above. By these, since the luminous efficiency of the fluorescent film 15 can be increased, the light quantity of the LED bulb 11 can be increased.
- the color rendering property of white light emitted from the LED bulb 11 can be improved. Specifically, white light having a correlated color temperature of 6500 K or less and an average color rendering index (Ra) of 85 or more can be easily obtained. By obtaining such white light, it is possible to improve the practicality of the LED bulb 11 as an alternative to an incandescent bulb. Furthermore, the light distribution angle of the LED bulb 11 can be increased, and the luminance deterioration with time due to the temperature rise of the fluorescent film 15 can be suppressed.
- the LED bulb 11 of this embodiment causes the entire fluorescent film 15 provided on the inner surface of the globe 14 to emit light, white light spreads from the fluorescent film 15 in all directions. This increases the spread of white light to the back of the bulb. Therefore, it is possible to effectively increase the white light distribution angle of the LED bulb 11.
- the light distribution angle can be set to 200 degrees or more, for example.
- the temperature of the fluorescent film 15 is, for example, up to around 60 ° C. Only rises. Accordingly, it is possible to suppress a decrease in luminance over time while the LED bulb 11 is lit.
- Examples 1 to 4 First, 5 series ⁇ 5 parallel LED chips having a chip shape of 0.4 ⁇ 0.4 mm with chip intervals P1 and P2 shown in Table 1 were respectively arranged on an alumina substrate having an outer shape of 30 ⁇ 30 mm. The emission wavelength of the LED chip is as shown in Table 1. Next, as shown in FIG. 1, the series connected chip rows were each independently sealed with a transparent silicone resin. The silicone resin linearly seals the LED chips in each chip row.
- the white light emitting devices of Examples 1 to 4 were manufactured by installing a cover member having a fluorescent film formed on the inner surface on each of the LED modules as follows. These white light emitting devices were subjected to characteristic evaluation described later.
- the phosphor film was formed as follows. First, Eu activated alkaline earth chlorophosphate ((Sr 0.604 Ba 0.394 Eu 0.002 ) 5 (PO 4 ) 3 Cl) phosphor as blue phosphor, Eu and Mn activated alkaline earth silicic acid as green to yellow phosphor salt ((Sr 0.675 Ba 0.25 Mg 0.0235 Eu 0.05 Mn 0.0015) 2 SiO 4) phosphor was prepared Eu-activated lanthanum oxysulfide as the red phosphor ((La 0.9 Eu 0.1) 2 O 2 S) phosphor.
- phosphors were mixed at a ratio of 27% by mass of blue phosphor, 4% by mass of green to yellow phosphor, and 69% by mass of red phosphor, and then dispersed in a silicone resin to obtain phosphor slurry (phosphor ratio: 65 Mass%). After applying this phosphor slurry to the inside of a polycarbonate cover member, the phosphor slurry coating film was cured by heat treatment using an oven or the like. The thickness of the fluorescent film was 0.2 mm.
- Example 5 A white light emitting device was fabricated in the same manner as in Example 1 except that the chip intervals P1 and P2 of the 5 series ⁇ 5 parallel LED chips were changed to the values shown in Table 1, respectively. These white light emitting devices were subjected to characteristic evaluation described later.
- the white light emitting devices of Examples 1 to 4 and Comparative Examples 1 to 5 are made to emit light by applying the driving voltage and driving current of the LED chip shown in Table 2, and the light output of white light emitted from each white light emitting device, Total luminous flux and correlated color temperature were measured. These characteristics were measured by a SLMS total luminous flux measurement system manufactured by Loves Fair. The results are shown in Table 2.
- the chip spacing P1 and P2 is 10 times as long as the length of one side of the square chip (0.4 mm) (4 mm). Although the interval P2 is narrowed, it can be seen that the difference between the light output and the total luminous flux is within 5% because the chip interval P2 is 2.6 times or more the length of the chip side. On the other hand, in Comparative Examples 1 and 2, the light output and the total luminous flux are each reduced to about 25% with respect to Example 1. This is because the chip interval P2 is less than 2.6 times the length of the chip side (0.4 mm), so that interference of light emitted from adjacent LED chips increases, and light extraction efficiency from the LED chips is increased. This is because it was lowered.
- Comparative Examples 3 and 4 the light output and the total luminous flux are each reduced to about 50% with respect to Example 1. This is because the chip intervals P1 and P2 are each less than 2.6 times the length of the chip side (0.4 mm), so that interference of light emitted from the adjacent LED chips becomes remarkably large, and light from the LED chips. This is because the take-out efficiency of the product has greatly decreased.
- Comparative Example 5 in which the chip interval P2 is expanded to a value (4.5 mm) exceeding 10 times the length of the chip side (0.4 mm), almost the same optical output and total luminous flux as those in Example 1 are obtained. Yes. However, further improvement of the light output and the total luminous flux cannot be expected, and conversely, the cost increases due to the increase in the size of the substrate, and the adaptability to various device sizes as the LED module decreases.
- Example 5 to 8 LED chips having a chip shape of 0.6 ⁇ 0.6 mm with chip intervals P1 and P2 shown in Table 3 were arranged in 4 series ⁇ 4 parallel on an alumina substrate having an outer shape of 35 ⁇ 35 mm, respectively.
- the emission wavelength of the LED chip is as shown in Table 3.
- each LED chip was individually sealed with a transparent silicone resin.
- the white light emitting devices of Examples 5 to 8 were manufactured by installing cover members each having a fluorescent film formed on the inner surface thereof as described below. The characteristics of these white light emitting devices were measured in the same manner as in Example 1. The results are shown in Table 4.
- the phosphor film was formed as follows. First, Eu activated alkaline earth chlorophosphate ((Sr 0.604 Ba 0.394 Eu 0.002 ) 5 (PO 4 ) 3 Cl) phosphor as blue phosphor, Eu and Mn activated alkaline earth silicic acid as green to yellow phosphor salt ((Sr 0.675 Ba 0.25 Mg 0.0235 Eu 0.05 Mn 0.0015) 2 SiO 4) phosphor was prepared Eu-activated lanthanum oxysulfide as the red phosphor ((La 0.9 Eu 0.1) 2 O 2 S) phosphor.
- Each of these phosphors was mixed in a proportion of 52% by mass of blue phosphor, 3% by mass of green to yellow phosphor, and 45% by mass of red phosphor, and then dispersed in a silicone resin to obtain phosphor slurry (phosphor ratio: 60). Mass%). After applying this phosphor slurry to the inside of a polycarbonate cover member, the phosphor slurry coating film was cured by heat treatment using an oven or the like. The thickness of the fluorescent film was 0.2 mm.
- Example 6 A white light emitting device was fabricated in the same manner as in Example 5 except that the chip intervals P1 and P2 of the 4 series ⁇ 4 parallel LED chips were changed to the values shown in Table 3, respectively. The characteristics of these white light emitting devices were measured in the same manner as in Example 5. The results are shown in Table 4.
- the chip spacing P1 and P2 is 10 times the length of one side of the square chip (0.6 mm) (6 mm). Although the interval P2 is narrowed, the difference between the light output and the total luminous flux is within 3% because the chip interval P2 is 2.6 times or more the length of the chip side. On the other hand, in Comparative Examples 6 and 7, the light output and the total luminous flux are each reduced to about 25% with respect to Example 5. This is because the chip interval P2 is less than 2.6 times the length of the chip side (0.6 mm), so that interference of light emitted from adjacent LED chips increases, and light extraction efficiency from the LED chips increases. This is because it was lowered.
- Comparative Examples 8 and 9 the light output and the total luminous flux are reduced to 45 to 60% with respect to Example 5, respectively.
- the chip intervals P1 and P2 are each less than 2.6 times the length of the chip side (0.6 mm), so that interference of light emitted from the adjacent LED chips becomes remarkably large, and light from the LED chips. This is because the take-out efficiency of the product has greatly decreased.
- Comparative Example 10 in which the chip interval P2 is expanded to a value (7 mm) exceeding 10 times the length of the chip side (0.6 mm), almost the same light output and total light flux as those in Example 5 are obtained.
- further improvement of the light output and the total luminous flux cannot be expected, and conversely, the cost increases due to the increase in the size of the substrate, and the adaptability to various device sizes as the LED module decreases.
- Example 9 to 12 an LED chip having an outer shape of 25 ⁇ 25 mm and a chip shape of 0.7 ⁇ 0.25 mm (average value of long side and short side: 0.475 mm) with chip intervals P1 and P2 shown in Table 5, respectively. Were arranged in 5 series ⁇ 5 parallel. The emission wavelength of the LED chip is as shown in Table 5. Next, as shown in FIG. 6, the series connected chip rows were each independently sealed with a transparent silicone resin. While fixing such an LED module on the base (heat sink) and installing a globe having a fluorescent film on the inner surface on the LED module as described below, the LED bulbs of Examples 9 to 12 can be obtained. Produced. The characteristics of these LED bulbs were measured in the same manner as in Example 1. The results are shown in Table 6.
- the phosphor film was formed as follows. First, Eu activated alkaline earth chlorophosphate ((Sr 0.604 Ba 0.394 Eu 0.002 ) 5 (PO 4 ) 3 Cl) phosphor as blue phosphor, Eu and Mn activated alkaline earth silicic acid as green to yellow phosphor salt ((Sr 0.675 Ba 0.25 Mg 0.0235 Eu 0.05 Mn 0.0015) 2 SiO 4) phosphor was prepared Eu-activated lanthanum oxysulfide as the red phosphor ((La 0.9 Eu 0.1) 2 O 2 S) phosphor.
- phosphors were mixed at a ratio of 63% by mass of blue phosphor, 2% by mass of green to yellow phosphor, and 35% by mass of red phosphor, and then dispersed in a silicone resin to obtain phosphor slurry (phosphor ratio: 60). Mass%). After this phosphor slurry was applied to the inside of a polycarbonate glove, the phosphor slurry coating film was cured by heat treatment using an oven or the like. The thickness of the fluorescent film was 0.2 mm.
- the chip intervals P1 and P2 were set to values (4.5 mm) that were approximately 10 times the average value (0.475 mm) of the long and short sides of the rectangular chip, respectively.
- the difference between the light output and the total luminous flux is within 5% because the chip interval P2 is 2.6 times or more of the average value of the chip side. I understand that.
- the light output and the total luminous flux are respectively reduced to about 20 to 30% with respect to Example 9. This is because the chip interval P2 is less than 2.6 times the average value (0.475 mm) of the chip side, so that interference of light emitted from adjacent LED chips becomes large, and light extraction efficiency from the LED chips is increased. This is because it was lowered.
- Comparative Examples 13 and 14 the light output and the total luminous flux are 50% to 60% lower than those in Example 9, respectively. This is because the chip intervals P1 and P2 are each less than 2.6 times the average value of the chip sides, so the interference of the light emitted from the adjacent LED chips becomes remarkably large, and the light extraction efficiency from the LED chips is greatly increased. This is because of a drop.
- Comparative Example 15 in which the chip interval P2 is expanded to a value (5.5 mm) exceeding 10 times the average value of the chip side, almost the same light output and total luminous flux as in Example 9 are obtained. However, further improvement of the light output and the total luminous flux cannot be expected, and conversely, the cost increases due to the increase in the size of the substrate, and the adaptability to various device sizes as the LED module decreases.
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Abstract
Description
一般式:(Sr1-x-y-zBaxCayEuz)5(PO4)3・Cl …(1)
(式中、x、y、及びzは0≦x<0.5、0≦y<0.1、0.005≦z<0.1を満足する数である)
(式中、x、y、z、及びuは0≦x<0.2、0≦y<0.1、0.005<z<0.5、0.1<u<0.5を満足する数である)
一般式:(Sr1-x-y-z-uBaxMgyEuzMnu)2SiO4 …(3)
(式中、x、y、z、及びuは0.1≦x≦0.35、0.025≦y≦0.105、0.025≦z≦0.25、0.0005≦u≦0.02を満足する数である)
一般式:RE3AxAl5-x-yByO12:Cez …(4)
(式中、REはY、Lu、及びGdから選ばれる少なくとも1種の元素を示し、A及びBは対をなす元素であって、(A,B)が(Mg,Si)、(B,Sc)、(B.In)のいずれかであり、x、y、及びzはx<2、y<2、0.9≦x/y≦1.1、0.05≦z≦0.5 を満足する数である)
一般式:(Si,Al)6(O,N)8:Eux …(5)
(式中、xは0<x<0.3を満足する数である)
一般式:(Sr1-xEux)αSiβAlγOδNω …(6)
(式中、x、α、β、γ、δ、及びωは0<x<1、0<α≦3、12≦β≦14、2≦γ≦3.5、1≦δ≦3、20≦ω≦22を満足する数である)
(式中、MはSm、Ga、Sb、及びSnから選ばれる少なくとも1種の元素を示し、x及びyは0.08≦x<0.16、0.000001≦y<0.003を満足する数である)
一般式:(Y1-x-yEuxBiy)2O3 …(8)
(式中、x及びyは0.01≦x<0.15、0.001≦y<0.05を満足する数である)
一般式:(Ca1-x-ySrxEuy)SiAlN3 …(9)
(式中、x及びyは0≦x<0.4、0<y<0.5を満足する数である)
一般式:(Sr1-xEux)αSiβAlγOδNω …(10)
(式中、x、α、β、γ、δ、及びωは0<x<1、0<α≦3、5≦β≦9、1≦γ≦5、0.5≦δ≦2、5≦ω≦15を満足する数である)
一般式:(Ba1-x-y-z-uSrxMgyEuzMnu)2SiO4 …(11)
(式中、x、y、z、及びuは0.1≦x≦0.35、0.025≦y≦0.105、0.025≦z≦0.25、0.0005≦u≦0.02を満足する数である)
一般式:αMgO・βMgF2・(Ge1-xMnx)O2 …(12)
(式中、α、β、及びxは3.0≦α≦4.0、0.4≦β≦0.6、0.001≦x≦0.5を満足する数である)
まず、外形が30×30mmのアルミナ基板に、それぞれ表1に示すチップ間隔P1、P2でチップ形状が0.4×0.4mmのLEDチップを5直列×5並列に配置した。LEDチップの発光波長は表1に示す通りである。次いで、図1に示したように、直列接続されたチップ列をそれぞれ独立に透明なシリコーン樹脂で封止した。シリコーン樹脂は各チップ列のLEDチップを直線状に封止している。このようなLEDモジュール上にそれぞれ以下のようにして内面に蛍光膜を形成したカバー部材を設置することによって、実施例1~4の白色発光装置を作製した。これら白色発光装置を後述する特性評価に供した。
5直列×5並列のLEDチップのチップ間隔P1、P2を、それぞれ表1に示す値に変更する以外は、実施例1と同様にして白色発光装置を作製した。これら白色発光装置を後述する特性評価に供した。
まず、外形が35×35mmのアルミナ基板に、それぞれ表3に示すチップ間隔P1、P2でチップ形状が0.6×0.6mmのLEDチップを4直列×4並列に配置した。LEDチップの発光波長は表3に示す通りである。次いで、図3に示したように、各LEDチップをそれぞれ個別に透明なシリコーン樹脂で封止した。このようなLEDモジュール上にそれぞれ以下のようにして内面に蛍光膜を形成したカバー部材を設置することによって、実施例5~8の白色発光装置を作製した。これら白色発光装置の特性を実施例1と同様にして測定した。その結果を表4に示す。
4直列×4並列のLEDチップのチップ間隔P1、P2を、それぞれ表3に示す値に変更する以外は、実施例5と同様にして白色発光装置を作製した。これら白色発光装置の特性を実施例5と同様にして測定した。その結果を表4に示す。
まず、外形が25×25mmのアルミナ基板に、それぞれ表5に示すチップ間隔P1、P2でチップ形状が0.7×0.25mm(長辺と短辺の平均値:0.475mm)のLEDチップを5直列×5並列に配置した。LEDチップの発光波長は表5に示す通りである。次いで、図6に示したように、直列接続されたチップ列をそれぞれ独立に透明なシリコーン樹脂で封止した。このようなLEDモジュールを基体部(ヒートシンク)上に固定すると共に、それぞれ以下のようにして内面に蛍光膜を形成したグローブをLEDモジュール上に設置することによって、実施例9~12のLED電球を作製した。これらLED電球の特性を実施例1と同様にして測定した。その結果を表6に示す。
5直列×5並列のLEDチップのチップ間隔P1、P2を、それぞれ表5に示す値に変更する以外は、実施例9と同様にしてLED電球を作製した。これらLED電球の特性を実施例9と同様にして測定した。その結果を表6に示す。
Claims (18)
- 基板と、前記基板上に配置された4個以上の紫外乃至紫色発光のLEDチップとを備えるLEDモジュールと、
前記LEDモジュールを覆うカバー部材と、
前記LEDチップから離間するように前記カバー部材に沿って設けられ、前記LEDチップから出射された紫外乃至紫色光を吸収して可視光を発光する蛍光膜とを具備し、
前記4個以上のLEDチップは、それぞれ正方形又は長方形の形状を有し、かつ2.6L≦P≦10Lの条件(Pは1つの前記LEDチップの中心から最も近い位置に存在する他の前記LEDチップの中心までの距離、Lは前記LEDチップの形状が正方形の場合には一辺の長さ、長方形の場合には長辺と短辺の平均値である)を満足するように、マトリクス状に配置されていることを特徴とする発光装置。 - 請求項1記載の発光装置において、
前記LEDチップは、2個以上の前記LEDチップを直列接続した直列数が2列以上の直並列回路を構成していることを特徴とする発光装置。 - 請求項1記載の発光装置において、
前記LEDチップは透明樹脂層で封止されており、かつ前記透明樹脂層は2個以上の前記LEDチップを直線状に封止するように形成されていることを特徴とする発光装置。 - 請求項1記載の発光装置において、
前記LEDチップは透明樹脂層で封止されており、かつ前記透明樹脂層は前記LEDチップを個別に封止するように形成されていることを特徴とする発光装置。 - 請求項1記載の発光装置において、
前記LEDチップから出射される前記紫外乃至紫色光は、発光ピーク波長が370nm以上415nm以下の範囲であることを特徴とする発光装置。 - 請求項1記載の発光装置において、
前記蛍光膜は青色蛍光体、緑色乃至黄色蛍光体、及び赤色蛍光体を含有し、かつ前記可視光として白色光を発光することを特徴とする発光装置。 - 請求項6記載の発光装置において、
前記青色蛍光体は
一般式:(Sr1-x-y-zBaxCayEuz)5(PO4)3・Cl
(式中、x、y、及びzは0≦x<0.5、0≦y<0.1、0.005≦z<0.1を満足する数である)
で表される組成を有するユーロピウム付活アルカリ土類クロロ燐酸塩蛍光体からなり、
前記緑色乃至黄色蛍光体は
一般式:(Ba1-x-y-zSrxCayEuz)(Mg1-uMnu)Al10O17
(式中、x、y、z、及びuは0≦x<0.2、0≦y<0.1、0.005<z<0.5、0.1<u<0.5を満足する数である)
で表される組成を有するユーロピウム及びマンガン付活アルカリ土類アルミン酸塩蛍光体、
一般式:(Sr1-x-y-z-uBaxMgyEuzMnu)2SiO4
(式中、x、y、z、及びuは0.1≦x≦0.35、0.025≦y≦0.105、0.025≦z≦0.25、0.0005≦u≦0.02を満足する数である)
で表される組成を有するユーロピウム及びマンガン付活アルカリ土類珪酸塩蛍光体、
一般式:RE3AxAl5-x-yByO12:Cez
(式中、REはY、Lu、及びGdから選ばれる少なくとも1種の元素を示し、A及びBは対をなす元素であって、(A,B)が(Mg,Si)、(B,Sc)、(B.In)のいずれかであり、x、y、及びzはx<2、y<2、0.9≦x/y≦1.1、0.05≦z≦0.5 を満足する数である)
で表される組成を有するセリウム付活希土類アルミン酸塩蛍光体、
一般式:(Si,Al)6(O,N)8:Eux
(式中、xは0<x<0.3を満足する数である)
で表される組成を有するユーロピウム付活サイアロン蛍光体、及び
一般式:(Sr1-xEux)αSiβAlγOδNω
(式中、x、α、β、γ、δ、及びωは0<x<1、0<α≦3、12≦β≦14、2≦γ≦3.5、1≦δ≦3、20≦ω≦22を満足する数である)
で表される組成を有するユーロピウム付活サイアロン蛍光体から選ばれる少なくとも1種からなり、
前記赤色蛍光体は
一般式:(La1-x-yEuxMy)2O2S
(式中、MはSm、Ga、Sb、及びSnから選ばれる少なくとも1種の元素を示し、x及びyは0.08≦x<0.16、0.000001≦y<0.003を満足する数である)
で表される組成を有するユーロピウム付活酸硫化ランタン蛍光体、
一般式:(Y1-x-yEuxBiy)2O3
(式中、x及びyは0.01≦x<0.15、0.001≦y<0.05を満足する数である)
で表される組成を有するユーロピウム及びビスマス付活酸化イットリウム蛍光体、
一般式:(Ca1-x-ySrxEuy)SiAlN3
(式中、x及びyは0≦x<0.4、0<y<0.5を満足する数である)
で表される組成を有するユーロピウム付活カズン蛍光体、及び
一般式:(Sr1-xEux)αSiβAlγOδNω
(式中、x、α、β、γ、δ、及びωは0<x<1、0<α≦3、5≦β≦9、1≦γ≦5、0.5≦δ≦2、5≦ω≦15を満足する数である)
で表される組成を有するユーロピウム付活サイアロン蛍光体から選ばれる少なくとも1種からなることを特徴とする発光装置。 - 請求項6記載の発光装置において、
前記蛍光膜は、さらに青緑色蛍光体及び深赤色蛍光体から選ばれる少なくとも1種を含有することを特徴とする発光装置。 - 請求項8記載の発光装置において、
前記青緑色蛍光体は
一般式:(Ba1-x-y-z-uSrxMgyEuzMnu)2SiO4
(式中、x、y、z、及びuは0.1≦x≦0.35、0.025≦y≦0.105、0.025≦z≦0.25、0.0005≦u≦0.02を満足する数である)
で表される組成を有するユーロピウム及びマンガン付活アルカリ土類珪酸塩蛍光体からなり、
前記深赤色蛍光体は
一般式:αMgO・βMgF2・(Ge1-xMnx)O2
(式中、α、β、及びxは3.0≦α≦4.0、0.4≦β≦0.6、0.001≦x≦0.5を満足する数である)
で表される組成を有するマンガン付活マグネシウムフロロジャーマネート蛍光体からなることを特徴とする発光装置。 - 請求項1記載の発光装置において、
前記基板はアルミナ焼結体からなることを特徴とする発光装置。 - 基板と、前記基板上に実装された4個以上の紫外乃至紫色発光のLEDチップとを備えるLEDモジュールと、
前記LEDモジュールが設置された基体部と、
前記LEDモジュールを覆うように前記基体部に取り付けられたグローブと、
前記グローブの内面に前記LEDチップから離間させて設けられ、前記LEDチップから出射された紫外乃至紫色光を吸収して白色光を発光する蛍光膜と、
前記基体部内に設けられ、前記LEDチップを点灯させる点灯回路と、
前記点灯回路と電気的に接続された口金とを具備し、
前記4個以上のLEDチップは、それぞれ正方形又は長方形の形状を有し、かつ2.6L≦P≦10Lの条件(Pは1つの前記LEDチップの中心から最も近い位置に存在する他の前記LEDチップの中心までの距離、Lは前記LEDチップの形状が正方形の場合には一辺の長さ、長方形の場合には長辺と短辺の平均値である)を満足するように、マトリクス状に配置されていることを特徴とするLED電球。 - 請求項11記載のLED電球において、
前記LEDチップは、2個以上の前記LEDチップを直列接続した直列数が2列以上の直並列回路を構成していることを特徴とするLED電球。 - 請求項11記載のLED電球において、
前記LEDチップは透明樹脂層で封止されており、かつ前記透明樹脂層は2個以上の前記LEDチップを直線状に封止するように形成されていることを特徴とするLED電球。 - 請求項11記載のLED電球において、
前記LEDチップは透明樹脂層で封止されており、かつ前記透明樹脂層は前記LEDチップを個別に封止するように形成されていることを特徴とするLED電球。 - 請求項11記載のLED電球において、
前記蛍光膜は、青色蛍光体、緑色乃至黄色蛍光体、及び赤色蛍光体を含有することを特徴とするLED電球。 - 請求項15記載のLED電球において、
前記蛍光膜は、さらに青緑色蛍光体及び深赤色蛍光体から選ばれる少なくとも1種を含有することを特徴とするLED電球。 - 請求項11記載のLED電球において、
前記基板はアルミナ焼結体からなることを特徴とするLED電球。 - 請求項11記載のLED電球において、
前記LEDモジュールは樹脂製ネジ又は金属製ネジで前記基体部に取り付けられていることを特徴とするLED電球。
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| JP2012533865A JP5559338B2 (ja) | 2010-09-16 | 2011-09-14 | 発光装置とled電球 |
| CN201180030116.4A CN102959743B (zh) | 2010-09-16 | 2011-09-14 | 发光装置和led灯泡 |
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| JP2014082417A (ja) * | 2012-10-18 | 2014-05-08 | Sharp Corp | 発光装置 |
| JP2017103488A (ja) * | 2017-03-06 | 2017-06-08 | シャープ株式会社 | 発光装置 |
| JP2018147929A (ja) * | 2017-03-01 | 2018-09-20 | 豊田合成株式会社 | 発光装置 |
| KR101937196B1 (ko) | 2017-08-08 | 2019-01-14 | 재경전광산업 주식회사 | 엘이디 전구용 엘이디 모듈, 엘이디 모듈 어레이 및 그 제조방법 |
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| KR102305233B1 (ko) * | 2014-11-24 | 2021-09-27 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광 모듈 및 이를 포함하는 조명 장치 |
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| JP5559338B2 (ja) | 2014-07-23 |
| JPWO2012035762A1 (ja) | 2014-01-20 |
| CN102959743A (zh) | 2013-03-06 |
| CN102959743B (zh) | 2015-06-17 |
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